TW202509184A - 蝕刻組成物、蝕刻組成物的製造方法、矽氮化膜的蝕刻方法及半導體記憶體的製造方法 - Google Patents
蝕刻組成物、蝕刻組成物的製造方法、矽氮化膜的蝕刻方法及半導體記憶體的製造方法 Download PDFInfo
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- TW202509184A TW202509184A TW113127664A TW113127664A TW202509184A TW 202509184 A TW202509184 A TW 202509184A TW 113127664 A TW113127664 A TW 113127664A TW 113127664 A TW113127664 A TW 113127664A TW 202509184 A TW202509184 A TW 202509184A
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- etching
- etching composition
- allyltriethoxysilane
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023121091 | 2023-07-25 | ||
| JP2023-121091 | 2023-07-25 | ||
| JP2023-192706 | 2023-11-13 | ||
| JP2023192706 | 2023-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202509184A true TW202509184A (zh) | 2025-03-01 |
Family
ID=94375416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW113127664A TW202509184A (zh) | 2023-07-25 | 2024-07-25 | 蝕刻組成物、蝕刻組成物的製造方法、矽氮化膜的蝕刻方法及半導體記憶體的製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7632779B1 (https=) |
| TW (1) | TW202509184A (https=) |
| WO (1) | WO2025023288A1 (https=) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070009448A1 (en) * | 2005-02-25 | 2007-01-11 | Kanca John A Iii | Silanol based dental treatment |
| CN110606954B (zh) * | 2018-06-15 | 2023-03-24 | 易案爱富科技有限公司 | 聚硅氧烷类化合物、包含所述聚硅氧烷类化合物的氮化硅层蚀刻组合物 |
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2024
- 2024-07-25 TW TW113127664A patent/TW202509184A/zh unknown
- 2024-07-25 JP JP2024569039A patent/JP7632779B1/ja active Active
- 2024-07-25 WO PCT/JP2024/026543 patent/WO2025023288A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2025023288A1 (https=) | 2025-01-30 |
| WO2025023288A1 (ja) | 2025-01-30 |
| JP7632779B1 (ja) | 2025-02-19 |
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