JP7632779B1 - エッチング組成物 - Google Patents
エッチング組成物 Download PDFInfo
- Publication number
- JP7632779B1 JP7632779B1 JP2024569039A JP2024569039A JP7632779B1 JP 7632779 B1 JP7632779 B1 JP 7632779B1 JP 2024569039 A JP2024569039 A JP 2024569039A JP 2024569039 A JP2024569039 A JP 2024569039A JP 7632779 B1 JP7632779 B1 JP 7632779B1
- Authority
- JP
- Japan
- Prior art keywords
- mass
- etching
- less
- allyltriethoxysilane
- etching composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
- H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024203360A JP2025019188A (ja) | 2023-07-25 | 2024-11-21 | エッチング組成物 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023121091 | 2023-07-25 | ||
| JP2023121091 | 2023-07-25 | ||
| JP2023192706 | 2023-11-13 | ||
| JP2023192706 | 2023-11-13 | ||
| PCT/JP2024/026543 WO2025023288A1 (ja) | 2023-07-25 | 2024-07-25 | エッチング組成物 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024203360A Division JP2025019188A (ja) | 2023-07-25 | 2024-11-21 | エッチング組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2025023288A1 JPWO2025023288A1 (https=) | 2025-01-30 |
| JP7632779B1 true JP7632779B1 (ja) | 2025-02-19 |
| JPWO2025023288A5 JPWO2025023288A5 (https=) | 2025-07-01 |
Family
ID=94375416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024569039A Active JP7632779B1 (ja) | 2023-07-25 | 2024-07-25 | エッチング組成物 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7632779B1 (https=) |
| TW (1) | TW202509184A (https=) |
| WO (1) | WO2025023288A1 (https=) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070009448A1 (en) * | 2005-02-25 | 2007-01-11 | Kanca John A Iii | Silanol based dental treatment |
| US20190382659A1 (en) * | 2018-06-15 | 2019-12-19 | Enf Technology Co., Ltd. | Polysiloxane-based compound, silicon nitride layer etching composition including the same |
-
2024
- 2024-07-25 TW TW113127664A patent/TW202509184A/zh unknown
- 2024-07-25 JP JP2024569039A patent/JP7632779B1/ja active Active
- 2024-07-25 WO PCT/JP2024/026543 patent/WO2025023288A1/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070009448A1 (en) * | 2005-02-25 | 2007-01-11 | Kanca John A Iii | Silanol based dental treatment |
| US20190382659A1 (en) * | 2018-06-15 | 2019-12-19 | Enf Technology Co., Ltd. | Polysiloxane-based compound, silicon nitride layer etching composition including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2025023288A1 (https=) | 2025-01-30 |
| WO2025023288A1 (ja) | 2025-01-30 |
| TW202509184A (zh) | 2025-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101320416B1 (ko) | 식각액 조성물 및 이를 이용한 습식 식각방법 | |
| KR101380487B1 (ko) | 실리콘 질화막의 에칭 용액 | |
| KR102436721B1 (ko) | 질화 규소를 포함하는 기판을 에칭하는 조성물 및 방법 | |
| KR100741250B1 (ko) | 질화 규소 필름을 선택적으로 에칭하기 위한 조성물 및 방법 | |
| JP5405031B2 (ja) | シリカ質膜の製造に用いる浸漬用溶液およびそれを用いたシリカ質膜の製造法 | |
| KR102336865B1 (ko) | 식각 조성물 및 이를 이용한 식각 방법 | |
| KR101391605B1 (ko) | 실리콘 질화막 식각액 조성물 | |
| KR102484988B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
| CN108513679B (zh) | 用于具有SiN层和Si层的基板的湿蚀刻组合物和使用其的湿蚀刻方法 | |
| KR101769347B1 (ko) | 실리콘 질화막 식각용 조성물. | |
| JP7632779B1 (ja) | エッチング組成物 | |
| CN110028971A (zh) | 蚀刻组合物及利用其的蚀刻方法 | |
| JP7632780B1 (ja) | エッチング組成物 | |
| EP3787008B1 (en) | Aqueous composition and cleaning method using same | |
| JP2025019188A (ja) | エッチング組成物 | |
| JP2025019189A (ja) | エッチング組成物 | |
| TWI858437B (zh) | 氮化矽膜蝕刻組合物及其製備方法 | |
| JP2024028211A (ja) | エッチング液、該エッチング液を用いたシリコンデバイスの製造方法および基板処理方法 | |
| JP2025035243A (ja) | エッチング液、該エッチング液を用いた基板の処理方法、半導体デバイスの製造方法、及びエッチング速度調整剤 | |
| TW200536014A (en) | SiN film selective etching solution and etching method | |
| KR102311328B1 (ko) | 실리콘 질화막 식각 방법 및 이를 이용한 반도체 소자의 제조 방법 | |
| KR20190005459A (ko) | 식각 조성물 및 이를 이용한 식각 방법 | |
| JP5136339B2 (ja) | エッチング用組成物及びそれを用いたエッチング方法 | |
| JP7410355B1 (ja) | エッチング液、該エッチング液を用いた基板の処理方法及び半導体デバイスの製造方法 | |
| CN111925805B (zh) | 一种蚀刻液组合物、其制备方法及应用 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241120 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20241120 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20241120 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250107 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250120 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7632779 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |