TW202436393A - 共聚物、正型光阻組成物及光阻圖案形成方法 - Google Patents

共聚物、正型光阻組成物及光阻圖案形成方法 Download PDF

Info

Publication number
TW202436393A
TW202436393A TW113105832A TW113105832A TW202436393A TW 202436393 A TW202436393 A TW 202436393A TW 113105832 A TW113105832 A TW 113105832A TW 113105832 A TW113105832 A TW 113105832A TW 202436393 A TW202436393 A TW 202436393A
Authority
TW
Taiwan
Prior art keywords
copolymer
group
monomer
photoresist
methylstyrene
Prior art date
Application number
TW113105832A
Other languages
English (en)
Chinese (zh)
Inventor
川上晃也
田口和典
Original Assignee
日商日本瑞翁股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本瑞翁股份有限公司 filed Critical 日商日本瑞翁股份有限公司
Publication of TW202436393A publication Critical patent/TW202436393A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Emergency Medicine (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
TW113105832A 2023-02-28 2024-02-19 共聚物、正型光阻組成物及光阻圖案形成方法 TW202436393A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023030551 2023-02-28
JP2023-030551 2023-02-28

Publications (1)

Publication Number Publication Date
TW202436393A true TW202436393A (zh) 2024-09-16

Family

ID=92589746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113105832A TW202436393A (zh) 2023-02-28 2024-02-19 共聚物、正型光阻組成物及光阻圖案形成方法

Country Status (4)

Country Link
JP (1) JPWO2024181177A1 (https=)
KR (1) KR20250159151A (https=)
TW (1) TW202436393A (https=)
WO (1) WO2024181177A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4116335B2 (ja) * 2002-06-07 2008-07-09 富士フイルム株式会社 感光性樹脂組成物
JP4253486B2 (ja) * 2002-09-25 2009-04-15 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法
JP7215005B2 (ja) * 2018-07-23 2023-01-31 日本ゼオン株式会社 重合体及びその製造方法、ポジ型レジスト組成物、並びにレジストパターン形成方法
CN112368308B (zh) * 2018-09-25 2023-01-13 日本瑞翁株式会社 共聚物和正型抗蚀剂组合物
US20230324797A1 (en) 2020-09-30 2023-10-12 Zeon Corporation Positive resist composition for extreme ultraviolet lithography and resist pattern formation kit for extreme ultraviolet lithography

Also Published As

Publication number Publication date
WO2024181177A1 (ja) 2024-09-06
JPWO2024181177A1 (https=) 2024-09-06
KR20250159151A (ko) 2025-11-10

Similar Documents

Publication Publication Date Title
TWI910129B (zh) 光阻共聚物及正型光阻組成物以及光阻圖案形成方法
TW201702744A (zh) 圖案形成方法、積層體以及有機溶劑顯影用抗蝕劑組成物
CN110050005A (zh) 聚合物、正型抗蚀剂组合物和抗蚀剂图案形成方法
KR20130132781A (ko) 패턴 형성 방법, 레지스트 하층막 및 레지스트 하층막 형성용 조성물
JP7574566B2 (ja) ポジ型レジスト組成物及びレジストパターン形成キット
TWI910186B (zh) 共聚物、正型光阻組成物及光阻圖案形成方法
JP7852502B2 (ja) 極端紫外線リソグラフィ用ポジ型レジスト組成物および極端紫外線リソグラフィ用レジストパターン形成キット
TW202246899A (zh) 正型光阻組成物及光阻圖案形成方法
TW201435507A (zh) 感光化射線性或感放射線性樹脂組成物、使用該組成物的抗蝕劑膜、圖案形成方法、電子元件的製造方法及電子元件
JP6935669B2 (ja) レジストパターン形成方法
TW202436393A (zh) 共聚物、正型光阻組成物及光阻圖案形成方法
WO2023026842A1 (ja) ポジ型レジスト組成物
TW202442714A (zh) 共聚物、正型光阻組成物及光阻圖案形成方法
TWI922735B (zh) 正型光阻組成物
TW202442715A (zh) 共聚物、正型光阻組成物及光阻圖案形成方法
JP7643037B2 (ja) レジストパターン形成方法
JP7643204B2 (ja) レジストパターン形成方法
TW202348648A (zh) 共聚物、共聚物混合物及正型光阻組成物
TW202349123A (zh) 正型光阻組成物
WO2025203875A1 (ja) ポジ型レジスト組成物およびレジストパターン形成方法
JP7131292B2 (ja) レジストパターン形成方法
WO2022270511A1 (ja) ポジ型レジスト組成物及びレジストパターン形成方法
TW202419472A (zh) 光阻組成物及光阻圖案形成方法