KR20250159151A - 공중합체, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents

공중합체, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법

Info

Publication number
KR20250159151A
KR20250159151A KR1020257026684A KR20257026684A KR20250159151A KR 20250159151 A KR20250159151 A KR 20250159151A KR 1020257026684 A KR1020257026684 A KR 1020257026684A KR 20257026684 A KR20257026684 A KR 20257026684A KR 20250159151 A KR20250159151 A KR 20250159151A
Authority
KR
South Korea
Prior art keywords
copolymer
group
monomer
monomer unit
methylstyrene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257026684A
Other languages
English (en)
Korean (ko)
Inventor
아키야 카와우에
카즈노리 타구치
Original Assignee
니폰 제온 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니폰 제온 가부시키가이샤 filed Critical 니폰 제온 가부시키가이샤
Publication of KR20250159151A publication Critical patent/KR20250159151A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/22—Esters containing halogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Emergency Medicine (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
KR1020257026684A 2023-02-28 2024-02-16 공중합체, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 Pending KR20250159151A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023030551 2023-02-28
JPJP-P-2023-030551 2023-02-28
PCT/JP2024/005585 WO2024181177A1 (ja) 2023-02-28 2024-02-16 共重合体、ポジ型レジスト組成物、およびレジストパターン形成方法

Publications (1)

Publication Number Publication Date
KR20250159151A true KR20250159151A (ko) 2025-11-10

Family

ID=92589746

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257026684A Pending KR20250159151A (ko) 2023-02-28 2024-02-16 공중합체, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법

Country Status (4)

Country Link
JP (1) JPWO2024181177A1 (https=)
KR (1) KR20250159151A (https=)
TW (1) TW202436393A (https=)
WO (1) WO2024181177A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022070928A1 (ja) 2020-09-30 2022-04-07 日本ゼオン株式会社 極端紫外線リソグラフィ用ポジ型レジスト組成物および極端紫外線リソグラフィ用レジストパターン形成キット

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4116335B2 (ja) * 2002-06-07 2008-07-09 富士フイルム株式会社 感光性樹脂組成物
JP4253486B2 (ja) * 2002-09-25 2009-04-15 富士フイルム株式会社 ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法
JP7215005B2 (ja) * 2018-07-23 2023-01-31 日本ゼオン株式会社 重合体及びその製造方法、ポジ型レジスト組成物、並びにレジストパターン形成方法
CN112368308B (zh) * 2018-09-25 2023-01-13 日本瑞翁株式会社 共聚物和正型抗蚀剂组合物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022070928A1 (ja) 2020-09-30 2022-04-07 日本ゼオン株式会社 極端紫外線リソグラフィ用ポジ型レジスト組成物および極端紫外線リソグラフィ用レジストパターン形成キット

Also Published As

Publication number Publication date
WO2024181177A1 (ja) 2024-09-06
JPWO2024181177A1 (https=) 2024-09-06
TW202436393A (zh) 2024-09-16

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