TW202402767A - 含錫有機金屬化合物 - Google Patents

含錫有機金屬化合物 Download PDF

Info

Publication number
TW202402767A
TW202402767A TW112115159A TW112115159A TW202402767A TW 202402767 A TW202402767 A TW 202402767A TW 112115159 A TW112115159 A TW 112115159A TW 112115159 A TW112115159 A TW 112115159A TW 202402767 A TW202402767 A TW 202402767A
Authority
TW
Taiwan
Prior art keywords
chch
group
organometallic compound
carbon atoms
compound according
Prior art date
Application number
TW112115159A
Other languages
English (en)
Chinese (zh)
Inventor
戴安娜 法布耶克
卡西迪 柯諾佛
紹恩 森貝拉
柯林 坎貝爾
Original Assignee
加拿大商海星化工無限責任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 加拿大商海星化工無限責任公司 filed Critical 加拿大商海星化工無限責任公司
Publication of TW202402767A publication Critical patent/TW202402767A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2208—Compounds having tin linked only to carbon, hydrogen and/or halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2224—Compounds having one or more tin-oxygen linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
TW112115159A 2022-04-25 2023-04-24 含錫有機金屬化合物 TW202402767A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202263334430P 2022-04-25 2022-04-25
US63/334,430 2022-04-25

Publications (1)

Publication Number Publication Date
TW202402767A true TW202402767A (zh) 2024-01-16

Family

ID=88518053

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112115159A TW202402767A (zh) 2022-04-25 2023-04-24 含錫有機金屬化合物

Country Status (8)

Country Link
US (1) US20250197429A1 (https=)
EP (1) EP4514811A4 (https=)
JP (1) JP2025513957A (https=)
KR (1) KR20250005098A (https=)
CN (1) CN119365470A (https=)
IL (1) IL316184A (https=)
TW (1) TW202402767A (https=)
WO (1) WO2023209506A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023235534A1 (en) 2022-06-02 2023-12-07 Gelest, Inc. High purity alkyl tin compounds and manufacturing methods thereof
EP4568977A1 (en) 2022-08-12 2025-06-18 Gelest, Inc. High purity tin compounds containing unsaturated substituent and method for preparation thereof
US12606577B2 (en) 2022-09-28 2026-04-21 Gelest, Inc. Iodoalkyl tin compounds and preparation methods thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067488A (ja) * 1983-09-24 1985-04-17 Osaka Soda Co Ltd 不斉基を有する光学活性有機錫化合物
JP2008091215A (ja) * 2006-10-02 2008-04-17 Nitto Kasei Co Ltd 酸化錫膜形成剤、該酸化錫膜形成剤を用いる酸化錫膜形成方法、及び該形成方法により形成される酸化錫膜
KR20170000756A (ko) * 2015-06-24 2017-01-03 주식회사 엘지화학 공액 디엔계 중합체 제조용 촉매 조성물 및 이를 이용하여 제조된 공액 디엔계 중합체
JPWO2018139109A1 (ja) * 2017-01-26 2019-11-14 Ｊｓｒ株式会社 感放射線性組成物及びパターン形成方法
JP2021025121A (ja) * 2019-08-09 2021-02-22 株式会社高純度化学研究所 化学蒸着用原料、スズを含有する薄膜の製造方法、およびスズ酸化物薄膜の製造方法
JP7624973B2 (ja) * 2019-08-29 2025-01-31 シースター ケミカルズ ユーエルシー 高純度酸化スズの堆積用の有機金属化合物ならびに酸化スズ膜のドライエッチングおよび堆積リアクタ

Also Published As

Publication number Publication date
CN119365470A (zh) 2025-01-24
KR20250005098A (ko) 2025-01-09
IL316184A (en) 2024-12-01
EP4514811A4 (en) 2026-05-06
EP4514811A1 (en) 2025-03-05
WO2023209506A1 (en) 2023-11-02
JP2025513957A (ja) 2025-05-01
US20250197429A1 (en) 2025-06-19

Similar Documents

Publication Publication Date Title
TW202402767A (zh) 含錫有機金屬化合物
JP7577104B2 (ja) 有機金属化合物及びその精製法
TWI851483B (zh) 高純度液體組合物及其應用
TWI865916B (zh) 用於euv-可圖案化的膜之醯胺/烷氧化錫(ii)前驅物
TWI870051B (zh) 環狀氮雜錫烷和環狀氧雜錫烷化合物及彼等之製備方法
TWI844949B (zh) 氟烷基錫前驅物之合成
TW202413383A (zh) 含不飽和取代基之高純度錫化合物及其製造方法
TW202233640A (zh) 有機錫化合物、其製造方法、使用其之ｅｕｖ光阻膜形成用液組成物及ｅｕｖ光阻膜之形成方法
WO2024181551A1 (ja) 高純度スズ化合物、その保管方法および製造方法、並びにそれを用いたスズ加水分解物、スズ加水分解物溶液、スズ加水分解物薄膜
TW202540140A (zh) 含有氟烷氧基取代基之高純度錫化合物及其製備方法
JPH07285970A (ja) シリコンおよびゲルマニウムの環状アミド
JP2021500364A (ja) 多孔性誘電体のキャッピングに使用する芳香族アミノシロキサン官能化材料
JPH01502114A (ja) アルカン、エーテル、一級および二級アルコール、ホスフィンオキサイドおよびシランの二量化および官能化
JP4120925B2 (ja) 銅錯体およびこれを用いた銅含有薄膜の製造方法
TWI905801B (zh) 亞錫烷氧化物及相關方法
TWI919106B (zh) 用於極紫外光微影術的組合物及相關方法
TW202600572A (zh) 高純度錫化合物及相關組合物與相關方法
JP2025520926A (ja) 極端紫外線リソグラフィのための化合物および方法
JPH09169773A (ja) アルコキシホルミルシラン、その製法、その熱分解法、基材上に二酸化ケイ素被覆を製造する方法及び縮合により加硫可能なシリコーン材料
JPH09118686A (ja) タンタル化合物の製造方法
JPH02233687A (ja) １，１‐ジクロロ‐１，２，２‐トリメチル‐２‐（トリフルオロメチル置換フェニル）ジシランおよびその製造法