JP2025513957A - スズ含有有機金属化合物 - Google Patents

スズ含有有機金属化合物 Download PDF

Info

Publication number
JP2025513957A
JP2025513957A JP2024563147A JP2024563147A JP2025513957A JP 2025513957 A JP2025513957 A JP 2025513957A JP 2024563147 A JP2024563147 A JP 2024563147A JP 2024563147 A JP2024563147 A JP 2024563147A JP 2025513957 A JP2025513957 A JP 2025513957A
Authority
JP
Japan
Prior art keywords
chch2
carbon atoms
organometallic compound
group
pyrrolidinyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024563147A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025513957A5 (https=
Inventor
ファバルヤク，ダイアナ
コノバー，キャシディ
センベラ，ショーン
キャンベル，コリン
Original Assignee
シースター ケミカルズ ユーエルシー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シースター ケミカルズ ユーエルシー filed Critical シースター ケミカルズ ユーエルシー
Publication of JP2025513957A publication Critical patent/JP2025513957A/ja
Publication of JP2025513957A5 publication Critical patent/JP2025513957A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2208—Compounds having tin linked only to carbon, hydrogen and/or halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2224—Compounds having one or more tin-oxygen linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
JP2024563147A 2022-04-25 2023-04-20 スズ含有有機金属化合物 Pending JP2025513957A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263334430P 2022-04-25 2022-04-25
US63/334,430 2022-04-25
PCT/IB2023/054018 WO2023209506A1 (en) 2022-04-25 2023-04-20 Tin containing organometallic compounds

Publications (2)

Publication Number Publication Date
JP2025513957A true JP2025513957A (ja) 2025-05-01
JP2025513957A5 JP2025513957A5 (https=) 2026-03-23

Family

ID=88518053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024563147A Pending JP2025513957A (ja) 2022-04-25 2023-04-20 スズ含有有機金属化合物

Country Status (8)

Country Link
US (1) US20250197429A1 (https=)
EP (1) EP4514811A4 (https=)
JP (1) JP2025513957A (https=)
KR (1) KR20250005098A (https=)
CN (1) CN119365470A (https=)
IL (1) IL316184A (https=)
TW (1) TW202402767A (https=)
WO (1) WO2023209506A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023235534A1 (en) 2022-06-02 2023-12-07 Gelest, Inc. High purity alkyl tin compounds and manufacturing methods thereof
EP4568977A1 (en) 2022-08-12 2025-06-18 Gelest, Inc. High purity tin compounds containing unsaturated substituent and method for preparation thereof
US12606577B2 (en) 2022-09-28 2026-04-21 Gelest, Inc. Iodoalkyl tin compounds and preparation methods thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018139109A1 (ja) * 2017-01-26 2018-08-02 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP2021025121A (ja) * 2019-08-09 2021-02-22 株式会社高純度化学研究所 化学蒸着用原料、スズを含有する薄膜の製造方法、およびスズ酸化物薄膜の製造方法
WO2021038523A1 (en) * 2019-08-29 2021-03-04 Seastar Chemicals Ulc Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6067488A (ja) * 1983-09-24 1985-04-17 Osaka Soda Co Ltd 不斉基を有する光学活性有機錫化合物
JP2008091215A (ja) * 2006-10-02 2008-04-17 Nitto Kasei Co Ltd 酸化錫膜形成剤、該酸化錫膜形成剤を用いる酸化錫膜形成方法、及び該形成方法により形成される酸化錫膜
KR20170000756A (ko) * 2015-06-24 2017-01-03 주식회사 엘지화학 공액 디엔계 중합체 제조용 촉매 조성물 및 이를 이용하여 제조된 공액 디엔계 중합체

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018139109A1 (ja) * 2017-01-26 2018-08-02 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP2021025121A (ja) * 2019-08-09 2021-02-22 株式会社高純度化学研究所 化学蒸着用原料、スズを含有する薄膜の製造方法、およびスズ酸化物薄膜の製造方法
WO2021038523A1 (en) * 2019-08-29 2021-03-04 Seastar Chemicals Ulc Organometallic compounds for the deposition of high purity tin oxide and dry etching of the tin oxide films and deposition reactors

Also Published As

Publication number Publication date
CN119365470A (zh) 2025-01-24
KR20250005098A (ko) 2025-01-09
IL316184A (en) 2024-12-01
EP4514811A4 (en) 2026-05-06
EP4514811A1 (en) 2025-03-05
WO2023209506A1 (en) 2023-11-02
TW202402767A (zh) 2024-01-16
US20250197429A1 (en) 2025-06-19

Similar Documents

Publication Publication Date Title
JP2025513957A (ja) スズ含有有機金属化合物
JP6065840B2 (ja) トリス（ジアルキルアミド）アルミニウム化合物及び当該アルミニウム化合物を用いるアルミニウム含有薄膜の製造方法
CN107108663B (zh) 使用衍生自锗烯的有机催化剂的氢化硅烷化方法
TWI852241B (zh) 氮雜雜氮錫三環、雜氮錫三環及其製備與使用方法
TWI832111B (zh) 用於製造富含氧代錫酸鹽之膜的方法及前驅物
WO2021029215A1 (ja) ビス（エチルシクロペンタジエニル）スズ、化学蒸着用原料、スズを含有する薄膜の製造方法、およびスズ酸化物薄膜の製造方法
TWI870051B (zh) 環狀氮雜錫烷和環狀氧雜錫烷化合物及彼等之製備方法
JP5524979B2 (ja) アミジン誘導体をリガンドとする新規ゲルマニウム化合物及びその製造方法
CN117980822A (zh) 用于euv-可图案化的膜的氨基化/烷氧化锡(ii)前驱物
CN119816507A (zh) 含有不饱和取代基的高纯度锡化合物及其制备方法
TW202436312A (zh) 高純度錫化合物、其保管方法及製造方法、以及使用其之錫水解物、錫水解物溶液、錫水解物薄膜
JPH07285970A (ja) シリコンおよびゲルマニウムの環状アミド
KR20000013302A (ko) 화학 증착법을 위한 유기 구리 전구체
WO2006082739A1 (ja) タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法
JP4120925B2 (ja) 銅錯体およびこれを用いた銅含有薄膜の製造方法
IL279915B2 (en) Process for the generation of metal- or semimetal-containing films
TWI890407B (zh) 釕之新半夾層錯合物
JP7768506B2 (ja) 金属又は半金属含有フィルムの生成方法
CN113227110B (zh) 有机金属化合物
WO2026052767A1 (en) Intramolecular stabilized mono alkyl metal alkoxides and their use thereof
TW201716417A (zh) 氧化鋁膜之製造方法、氧化鋁膜之製造原料及鋁化合物
WO2025184113A1 (en) High purity tin compounds and related compositions and related methods
JPH07188256A (ja) 蒸気圧の高い有機金属化学蒸着による銀薄膜形成用有機銀化合物
JPS63179909A (ja) 重合体薄膜の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241121

A529 Written submission of copy of amendment under article 34 pct

Free format text: JAPANESE INTERMEDIATE CODE: A529

Effective date: 20241024

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260311

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20260311

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20260311

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260407