TW202401544A - 晶圓之處理方法 - Google Patents
晶圓之處理方法 Download PDFInfo
- Publication number
- TW202401544A TW202401544A TW112121872A TW112121872A TW202401544A TW 202401544 A TW202401544 A TW 202401544A TW 112121872 A TW112121872 A TW 112121872A TW 112121872 A TW112121872 A TW 112121872A TW 202401544 A TW202401544 A TW 202401544A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- sheet
- unit
- processing method
- packaging unit
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 168
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 238000004806 packaging method and process Methods 0.000 claims description 27
- 239000011261 inert gas Substances 0.000 claims description 23
- 238000003672 processing method Methods 0.000 claims description 19
- 239000007788 liquid Substances 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- -1 polyethylene Polymers 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 239000004743 Polypropylene Substances 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 229920001155 polypropylene Polymers 0.000 claims description 6
- 229920002223 polystyrene Polymers 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229920000098 polyolefin Polymers 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 2
- 238000005520 cutting process Methods 0.000 description 69
- 239000010410 layer Substances 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000000428 dust Substances 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/04—Homopolymers or copolymers of ethene
- C09J123/06—Polyethene
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J123/00—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
- C09J123/02—Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
- C09J123/10—Homopolymers or copolymers of propene
- C09J123/12—Polypropene
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J125/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Adhesives based on derivatives of such polymers
- C09J125/02—Homopolymers or copolymers of hydrocarbons
- C09J125/04—Homopolymers or copolymers of styrene
- C09J125/06—Polystyrene
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
[課題]提供一種晶圓之處理方法,其可以解決在將晶圓分割成一個個的器件晶片並搬送至下一個步驟時,粉塵等的污染物質附著於器件晶片的正面,而導致品質的降低之問題。
[解決手段]一種晶圓之處理方法,包含以下步驟:框架單元形成步驟,將晶圓容置於在中央部具有容置晶圓之開口的環狀框架的開口,且將切割膠帶貼附於環狀框架的一面並且貼附晶圓來形成框架單元;分割步驟,對晶圓的分割預定線進行加工來分割成一個個的器件晶片;封裝單元形成步驟,在環狀框架的另一面貼附片材,且以切割膠帶與片材包圍晶圓而形成封裝單元;及搬送步驟,搬送封裝單元。
Description
本發明是有關於一種在正面形成有被交叉之複數條分割預定線區劃的複數個器件之晶圓之處理方法。
於正面形成有被交叉之複數條分割預定線區劃的IC、LSI等的複數個器件之晶圓,可藉由切割裝置、雷射加工裝置來分割成一個個的器件晶片,且經分割之器件晶片可利用在行動電話、個人電腦等的電氣機器上。
晶圓在被分割成一個個的器件晶片後,因為要搬送到拾取器件晶片來接合(bonding)到配線基板之接合步驟,所以被容置於在中央具有開口之環狀框架的該開口,且藉由切割膠帶來形成為一體(參照例如專利文獻1)。
又,在已形成於晶圓的正面之分割預定線形成和晶圓的成品厚度對應之深度的溝,且之後對晶圓的背面進行磨削來分割成一個個的器件晶片之稱為提前切割之技術(例如參照專利文獻2)中,已被分割成一個個的器件晶片之晶圓也是容置於在中央具有開口之環狀框架的該開口且藉由切割膠帶來和環狀框架一體化。
此外,在將雷射光線的聚光點定位在和已形成於晶圓的正面之分割預定線對應之晶圓的內部來照射而形成改質層,之後對晶圓的背面進行磨削來分割成一個個的器件晶片之技術(參照例如專利文獻3)中,已被分割成一個個的器件晶片之晶圓也是容置於在中央具有開口之環狀框架的該開口並藉由切割膠帶來和環狀框架一體化。
先前技術文獻
專利文獻
專利文獻1:日本特開平10-242083號公報
專利文獻2:日本特開2010-183014號公報
專利文獻3:日本特開2020-021791號公報
發明欲解決之課題
順道一提,藉由上述之各種的加工方法而將晶圓分割成一個個的器件晶片之後,並不一定會立即實施下一個步驟(例如接合步驟),而有長時間未實施對已分割成器件晶片之晶圓的加工之情形。在此情況下,會有粉塵等的污染物質附著於器件晶片的正面,而導致品質的降低之問題。
如上述之問題在實施將晶圓分割成一個個的器件晶片之分割步驟的工廠、與實施將器件晶片拾取並接合到配線基板之接合步驟的工廠之間的距離相隔得較遠的情況下、或以將實施該分割步驟後之晶圓進行長時間保管來作為前提的情況下等,特別會成為問題。
據此,本發明之目的在於提供一種晶圓之處理方法,其可以解決在將晶圓分割成一個個的器件晶片並搬送至下一個步驟時,粉塵等的污染物質附著於器件晶片的正面,而導致品質的降低之問題。
用以解決課題之手段
根據本發明,可提供一種晶圓之處理方法,前述晶圓於正面形成有被交叉之複數條分割預定線所區劃的複數個器件,前述晶圓之處理方法具備有以下步驟:
框架單元形成步驟,將該晶圓容置於在中央部具有容置該晶圓之開口的環狀框架的該開口,將切割膠帶貼附於該環狀框架的一面並且貼附該晶圓,而形成框架單元;
分割步驟,對該晶圓的分割預定線進行加工來分割成一個個的器件晶片;
封裝單元形成步驟,在環狀框架的另一面貼附片材,而以該切割膠帶與該片材包圍該晶圓而形成封裝單元;及
搬送步驟,搬送該封裝單元。
較佳的是,該晶圓之處理方法更包含將非活性氣體充填於該封裝單元的內部之非活性氣體充填步驟。較佳的是,該非活性氣體充填步驟是藉由在非活性氣體的氣體環境下實施該封裝單元形成步驟,來將非活性氣體充填於封裝單元的內部。較佳的是,該非活性氣體充填步驟是在該封裝單元形成步驟中,將液態氮充填於封裝單元的內部並使其膨脹。較佳的是,該晶圓之處理方法更包含洗淨步驟,前述洗淨步驟是在該封裝單元形成步驟之前洗淨晶圓。
較佳的是,該片材為熱壓接片材,在該封裝單元形成步驟中,該熱壓接片材熱壓接於環狀框架的另一面。較佳的是,該熱壓接片材是聚烯烴系片材,且是以聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一者來構成。較佳的是,將該熱壓接片材熱壓接於環狀框架的另一面時的加熱溫度,在該熱壓接片材為該聚乙烯片材的情況下是120~140℃,在為該聚丙烯片材的情況下是160~180℃,在為該聚苯乙烯片材的情況下是220~240℃。
發明效果
根據本發明之晶圓之處理方法,即使在將晶圓分割成一個個的器件晶片後,並未立即實施之後的步驟的情況下,仍可藉由片材保護晶圓的正面,而解決粉塵等附著於器件晶片的正面而使品質降低之問題。又,在將非活性氣體充填於封裝單元的內部的情況下,可防止已形成於晶圓之器件的金屬部分的氧化,而良好地實現已分割後之器件晶片的品質的維持。
用以實施發明之形態
以下,針對本發明實施形態之晶圓之處理方法,一邊參照附加圖式一邊詳細地說明。
在圖1中顯示有在本實施形態中的晶圓之處理方法中所處理之未加工的晶圓10。晶圓10是以例如矽(Si)的基板來構成,且是複數個器件12被分割預定線14區劃且形成於正面10a之晶圓。
準備了圖1所示的晶圓10後,將晶圓10定位並容置到於中央部具有可容置晶圓10的開口Fa之環狀框架F的該開口Fa,並將切割膠帶T1的外周貼附到環狀框架F的一面Fb(在圖中為下表面側),且進一步讓晶圓10的背面10b貼附於切割膠帶T1的中央部,來形成將晶圓10、環狀框架F與切割膠帶T1做成一體之框架單元U1(參照圖1的最下層)(框架單元形成步驟)。再者,本實施形態的切割膠帶T1雖然是在正面包含糊層之黏著膠帶,但亦可使用在正面不具有糊層之熱壓接片材並藉由加熱/推壓來貼附。
接著,實施對晶圓10的分割預定線14進行加工來分割成一個個的器件晶片之分割步驟。該分割步驟是使用例如圖2所示之切削裝置20(僅顯示一部分)來實施。
切削裝置20具備吸引保持框架單元U1之工作夾台(省略圖示)、與對已吸引保持在該工作夾台之框架單元U1的晶圓10進行切削之切削單元21。該工作夾台是旋轉自如地構成,且具備有將工作夾台朝圖中以箭頭X表示之X軸方向加工進給之X軸進給機構(省略圖示)。切削單元21具備朝圖中以箭頭Y表示之Y軸方向配設之主軸殼體22、旋轉自如地保持在該主軸殼體22之主軸23、與已保持在主軸23的前端之環狀的切削刀片24,並且具備有將切削刀片24在Y軸方向上分度進給之Y軸進給機構(省略圖示)。主軸23可藉由省略圖示之主軸馬達而被旋轉驅動。在主軸殼體22的前端部,配設有覆蓋主軸23的刀片蓋25,且在刀片蓋25中配設有導入切削水之切削水導入口26、與將從切削水導入口26所導入之切削水噴射到藉由切削刀片24切削加工之處的切削水噴射噴嘴27。
在實施該分割步驟時,首先是將晶圓10的正面10a朝向上方來載置在切削裝置20的該工作夾台並進行吸引保持,且使用省略圖示之校準單元來將晶圓10的朝第1方向伸長之分割預定線14對齊於X軸方向,並且實施和切削刀片24的對位。接著,將已朝以箭頭R1表示之方向高速旋轉之切削刀片24定位在已對齊於X軸方向之朝第1方向伸長之分割預定線14,且從正面10a側朝以箭頭Z表示之Z軸方向切入,並且將該工作夾台朝X軸方向加工進給來形成分割晶圓10之分割溝100。此外,作動該Y軸進給機構,將切削單元21的切削刀片24分度進給到在Y軸方向上和已形成前述分割溝100之分割預定線14相鄰之未加工的分割預定線14上,並和上述同樣地實施形成分割溝100之切削加工。藉由重複這些,而沿著朝第1方向伸長之全部的分割預定線14形成分割溝100。接著,將工作夾台旋轉90度,使朝和先前已形成分割溝100之方向正交之第2方向伸長之分割預定線14對齊於X軸方向,並對新對齊於X軸方向之全部的分割預定線14實施上述之切削加工,而沿著形成於晶圓10之全部的分割預定線14形成分割溝100。藉由如此實施分割步驟,將晶圓10分割成按每個器件12之器件晶片。
在本實施形態中,已實施上述之分割步驟後,實施圖3所示之洗淨步驟。在實施該洗淨步驟時,是將上述之框架單元U1搬送至例如已配設在切削裝置20之省略圖示的洗淨裝置。將框架單元U1吸引保持於在該洗淨裝置中呈可高速地旋轉地配設之旋轉工作台(省略圖示),且將圖3所示之洗淨水供給噴嘴28定位到晶圓10的上部並且使其在以箭頭R2所示之水平方向上擺動,且一邊使框架單元U1朝以箭頭R3表示之方向以高速來旋轉,一邊從洗淨水供給噴嘴28的噴嘴前端部28a噴射洗淨水W。藉此,將在上述之分割步驟中附著於晶圓10的正面10a之包含切削屑的粉塵沖洗掉,而將框架單元U1的正面洗淨。再者,雖然省略圖示,但在實施該洗淨步驟後,會實施合宜的乾燥步驟來使框架單元U1乾燥。
如上述地實施了分割步驟後,實施依據圖4所說明之封裝單元形成步驟。
在封裝單元形成步驟中,首先,將框架單元U1載置於省略圖示之可旋轉的保持工作台,並如圖4(a)所示,準備可覆蓋框架單元U1整體之尺寸的片材T2。接著,將片材T2載置並貼附於環狀框架F的另一面Fc(圖中上方側之面)。此時,實施非活性氣體充填步驟,以藉由非活性氣體(例如氮(N
2))來將由該片材T2與框架單元U1的上表面所形成之內部的空間充滿。
非活性氣體充填步驟可以藉由例如以下作法來實現:以可以將實施該封裝單元形成步驟之作業空間S形成為密閉之空間的罩殼(省略圖示)來形成,且將非活性氣體注入該作業空間S來做成非活性氣體環境、或在即將要將片材T2貼附到環狀框架F的另一面Fc之前,將如圖4(a)所示之液態氮供給單元30定位到框架單元U1的上表面,並從液態氮供給噴嘴32讓預定量的液態氮34滴下到框架單元U1上。在將液態氮34滴下到框架單元U1上的情況下,是在滴下液態氮34後,將液態氮供給單元30迅速地移動到不妨礙片材T2的貼附之位置,並將該片材T2載置於框架單元U1上。再者,上述之非活性氣體不限定為氮(N
2),可合宜選擇氬、氦、二氧化碳等在工業用中會被採用之習知的非活性氣體。
該片材T2是由例如可藉由加熱/推壓來貼附之熱壓接片材來構成,且可採用例如聚烯烴系片材來作為熱壓接片材。在採用聚烯烴系片材的情況下,可選擇例如聚乙烯片材、聚丙烯片材、聚苯乙烯片材之任一者。如上述,若將片材T2載置於框架單元U1的環狀框架F的另一面Fc後,即如圖4(b)所示,準備熱壓接器40。熱壓接器40具備有加熱輥42。在加熱輥42的內部配設有省略圖示之加熱器以及溫度感測器。在貼附片材T2時,是將加熱輥42的表面42a升溫到使片材T2發揮黏著力之預定的溫度,並且沿著環狀框架F的另一面Fc來推壓片材T2。將加熱輥42朝環狀框架F推壓後,使加熱輥42朝以箭頭R4表示之方向旋轉,並且讓保持框架單元U1之保持工作台朝以箭頭R5表示之方向旋轉。藉由以上,可將片材T2貼附於環狀框架F的另一面Fc的全周。
將作為上述之片材T2而採用之熱壓接片材熱壓接於環狀框架F的另一面Fc時的加熱溫度,在該熱壓接片材為聚乙烯片材的情況下是120~140℃,在為聚丙烯片材的情況下是160~180℃,在為聚苯乙烯片材的情況下是220~240℃。藉由加熱至這樣的溫度,熱壓接片材會軟化而發揮黏著力,即使在熱壓接片材的貼附面未形成有糊層,也可將片材T2貼附於環狀框架F的另一面Fc。再者,為了即使該熱壓接片材發揮黏著力加熱輥42也不會將該熱壓接片材捲入,而在加熱輥42的表面42a塗佈有氟樹脂。
如上述,將片材T2貼附於環狀框架F的另一面Fc的全周後,準備圖4(c)所示之切斷組件50,並將可旋轉的切削刀片52定位在環狀框架F的另一面Fc上。接著,使切削刀片52朝以箭頭R6表示之方向旋轉,並且使環狀框架F朝以箭頭R7表示之方向旋轉。藉此,沿著貼附有片材T2之環狀框架F來形成切削溝110。
如上述,由於在片材T2形成有切削溝110,所以如圖4(d)的上層所示,可將片材T2當中該切削溝110的內側區域的片材T2b留下,並將外側區域的片材T2a從環狀框架F剝離並去除。藉此,如圖4(d)的下層所示,可留下貼附於環狀框架F的另一面Fc之內側區域的片材T2b,而形成以上述之切割膠帶T1與片材T2b包圍晶圓10之封裝單元U2。藉由以上,即完成封裝單元形成步驟。如上述,在實施封裝單元形成步驟時,藉由將非活性氣體充填於封裝單元U2的內部,可防止晶圓10的構成器件12之接合墊等的金屬部的氧化。又,在將液態氮34滴下到封裝單元U2的內部來充填的情況下,因為在對片材T2進行熱壓接的過程中液態氮34會氣化並膨脹,所以可將封裝單元U2內的空氣排出,並且可抑制片材T2附著於晶圓10的正面10a之情形。
已完成封裝單元形成步驟後,實施將該封裝單元U2搬送到下一個步驟的搬送步驟。該搬送步驟也會包含例如以下情況:搬送至位於遠距離處之實施拾取步驟、接合步驟的工廠的情況、或者在實施該拾取步驟、接合步驟之前,保管在工廠的預定處之情況。
根據上述之本實施形態之晶圓之處理方法,即便在將晶圓10分割成一個個的器件晶片後,未立即實施之後的步驟的情況下,由於晶圓10的正面10a受到片材T2b保護,所以可解決粉塵等附著於器件晶片的正面而使品質降低之問題。又,在上述之實施形態中,藉由在封裝單元U2的內部充填有非活性氣體,可防止形成於晶圓10之器件12的金屬部的氧化,而可實現分割後的器件晶片的品質的維持。
在上述之實施形態的分割步驟中,雖然說明為僅使用圖2所記載之切削裝置20來實施,但在本發明中,對晶圓10的分割預定線14進行加工來分割成一個個的器件晶片之(分割步驟)方法並非限定於此,也包含藉由以下所說明之其他的形態來進行分割之情況。
於圖5(a)顯示有已以圖2為依據而說明之切削裝置20(省略關於詳細的說明)。準備了已以圖1為依據而說明之未加工的晶圓10後,即可將正面10a朝向上方之晶圓10載置在切削裝置20的省略圖示之工作夾台來進行吸引保持,並使用省略圖示之校準單元來將晶圓10的朝第1方向伸長之分割預定線14對齊於X軸方向,並且實施和切削刀片24的對位。接著,將已朝以箭頭R1表示之方向高速旋轉之切削刀片24定位在已對齊於X軸方向之朝第1方向伸長之預定的分割預定線14,並從正面10a側朝以箭頭Z表示之Z軸方向切入,並且將該工作夾台朝X軸方向加工進給,而如圖5(b)所示,形成和晶圓10的成品厚度對應之深度的切削溝102。此外,作動該Y軸進給機構,將切削單元21的切削刀片24分度進給到在Y軸方向上和已形成前述之切削溝102之分割預定線14相鄰之未加工的分割預定線14上,並實施形成和上述同樣的切削溝102之切削加工。藉由重複這些,而沿著朝第1方向伸長之全部的分割預定線14形成切削溝102。接著,將該工作夾台旋轉90度,使朝和先前已形成切削溝102之第1方向正交之第2方向伸長之分割預定線14對齊於X軸方向,並對新對齊於X軸方向之全部的分割預定線14實施上述之切削加工。藉由以上,而如圖5(c)所示,沿著形成於晶圓10之全部的分割預定線14形成切削溝102。沿著已形成於晶圓10的正面10a之全部的分割預定線14都形成上述之切削溝102後,即可如圖5(c)所示,將保護膠帶T3貼附在晶圓10的形成有切削溝102之正面10a。
接著,將已形成切削溝102之晶圓10搬送至圖6(a)所示之磨削裝置60(僅顯示一部分)。如圖6(a)所示,磨削裝置60具備有工作夾台61與磨削單元62。磨削單元62具備藉由未圖示之旋轉驅動機構來使其旋轉之旋轉主軸63、裝設於旋轉主軸63的下端的輪座64、與安裝在輪座64的下表面之磨削輪65,且在磨削輪65的下表面呈環狀地配設有複數個磨削磨石66。
將晶圓10搬送至磨削裝置60,並將貼附有保護膠帶T3之面朝向下方,且將背面10b朝向上方來載置並吸引保持於工作夾台61後,即可使磨削單元62的旋轉主軸63在圖6(a)中朝以箭頭R9表示之方向以例如6000rpm來旋轉,並且使工作夾台61朝以箭頭R10表示之方向以例如300rpm來旋轉。然後,一面藉由未圖示之磨削水供給器將磨削水供給到晶圓10的背面10b上,一面使磨削磨石66接觸於晶圓10的背面10b,並將磨削輪65以例如1μm/秒的磨削進給速度朝向下方來磨削進給。此時,可以一邊藉由未圖示之接觸式的測定儀來測定晶圓10的厚度一邊進行磨削,而將晶圓10的背面10b磨削預定量,並將晶圓10磨削到成為預定的成品厚度為止。藉由磨削到成為該成品厚度為止,如圖6(b)所示,於晶圓10的背面10b,已先形成之切削溝102會顯露出,並將晶圓10的器件12分割成一個個的器件晶片。如此進行而完成分割步驟後,即可因應於需要來實施省略圖示之洗淨步驟、乾燥步驟等。
如上述,實施使用圖5所示之切削裝置20來對晶圓10的分割預定線14施行形成切削溝102之加工,且使用圖6所示之磨削裝置60來將晶圓10分割成一個個的器件晶片之分割步驟後,在已將保護膠帶T3貼附於晶圓10的正面10a之狀態下,實施依據圖1所說明之框架單元形成步驟,並且將已貼附於晶圓10的正面10a側之保護膠帶T3剝離。藉此,會成為和已完成依據圖3所說明之洗淨步驟之狀態同樣的狀態。在此情況下,雖然和先前所說明之實施形態為框架單元形成步驟與分割步驟的順序前後顛倒,但在本發明中也包含以依據上述之圖5、6所說明之形態來實施之情況。
如上述,若實施依據圖5、圖6所說明之分割步驟,且之後實施框架單元形成步驟,即可以在之後實施依據圖4所說明之封裝單元形成步驟、搬送步驟,而可發揮和先前所說明之實施形態同樣的作用效果。
此外,本發明並不限定於上述之實施形態,也包含依據圖7、8所說明之以下的實施形態。
準備了依據圖1所說明之未加工的晶圓10後,搬送至圖7所示之雷射加工裝置70(僅顯示一部分)。雷射加工裝置70具備有保持晶圓10之工作夾台71、及對已保持在工作夾台71之晶圓10照射雷射光線LB之雷射光線照射單元72。雷射光線照射單元72是包含省略圖示之雷射振盪器與聚光器73,且從該聚光器73照射對晶圓10具有穿透性之波長的雷射光線LB之組件。工作夾台71具備有X軸進給機構、Y軸進給機構與旋轉驅動機構(皆省略圖示),前述X軸進給機構將工作夾台71與聚光器73相對地在X軸方向上加工進給,前述Y軸進給機構將工作夾台71與聚光器73相對地在和X軸方向正交之Y軸方向上加工進給,前述旋轉驅動機構使該保持單元旋轉。
已搬送到雷射加工裝置70之晶圓10是讓背面10b朝向上方來載置於工作夾台71而被吸引保持。已保持在工作夾台71之晶圓10是使用已配設在雷射加工裝置70之可從背面10b側檢測分割預定線14之紅外線相機(省略圖示)來拍攝並檢測該分割預定線14的位置,並且藉由該旋轉驅動機構來旋轉晶圓10,使預定方向的分割預定線14對齊於X軸方向。所檢測出之分割預定線14的位置之資訊會記憶於未圖示之控制器。
依據藉由上述之紅外線相機所檢測出之位置資訊,將雷射光線照射單元72的聚光器73定位在朝第1方向伸長之方向的分割預定線14的加工開始位置,並將雷射光線LB的聚光點定位在和晶圓10的分割預定線14對應之內部來照射,並且將晶圓10和工作夾台71一起朝X軸方向加工進給,而沿著晶圓10的朝第1方向伸長之預定的分割預定線14的內部來照射雷射光線LB而形成改質層120。已沿著預定的分割預定線14形成改質層120後,即可將晶圓10朝Y軸方向分度進給相當於分割預定線14的間隔,來將在Y軸方向上相鄰之未加工的分割預定線14定位到聚光器73的正下方。然後,和上述提到的同樣地進行,將雷射光線LB的聚光點定位在晶圓10的分割預定線14的內部來照射,且將晶圓10朝X軸方向加工進給來形成改質層120。同樣地進行,將晶圓10朝X軸方向加工進給並且朝Y軸方向分度進給,而在和沿著X軸方向之全部的分割預定線14對應之內部形成改質層120。接著,使晶圓10旋轉90度,使和已經形成有改質層120之分割預定線14正交之朝第2方向伸長之未加工的分割預定線14對齊於X軸方向。然後,與上述提到的同樣地,將雷射光線LB的聚光點定位在其餘的各分割預定線14的內部來進行照射,而如圖8所示,沿著晶圓10的全部的分割預定線14的內部形成改質層120。再者,在本實施形態中,是以沿著分割預定線14使聚光點的深度位置不同的方式來實施3次的雷射光線LB的照射,而如圖8的下層所示,形成由3層的雷射加工痕跡所構成之改質層120。
如上述,藉由雷射加工而沿著分割預定線14形成改質層120後,即可使用省略圖示之外力附加組件,來對晶圓10整體附加外力,來沿著形成有改質層120之分割預定線14將晶圓10分割成一個個的器件晶片(分割步驟)。再者,外力附加組件可以使用例如已依據圖6說明之磨削裝置60,並藉由磨削晶圓10的背面10b來附加外力、或使用具有彈力之旋轉輥(省略圖示)來從晶圓10的背面10b附加外力、或進一步地藉由將晶圓10貼附於膠帶(省略圖示)並將該膠帶呈放射狀地擴張,來對晶圓10附加外力。再者,在依據圖7所說明之雷射加工中,雖然是從晶圓10的背面10b側來照射雷射光線LB,但本發明並非限定於此,在分割預定線14上沒有成為雷射光線LB的妨礙之障礙物(電極等)的情況下,也可以從晶圓10的正面10a側來照射。
若使用上述之雷射加工裝置70,而沿著晶圓10的分割預定線14形成改質層120,且使用外力附加組件來將晶圓10沿著分割預定線14分割成一個個的器件晶片後,即可以在之後實施已依據圖4說明之封裝單元形成步驟、搬送步驟,而可以發揮和先前所說明之實施形態同樣的作用效果。
再者,本發明在將藉由本發明所加工之晶圓10搬送至位於遠距離處之工廠的情況下,並非限定為以下之情況來適用之構成:在實施下一個步驟之前,長時間保管於工廠的預定處。在即使下一個步驟並非偏遠地區的工廠的情況下、或到下一個步驟以前長時間未受到保管的情況下,在已形成於晶圓10之器件12為不容許些微的污染之器件、或搬送路徑為有粉塵等的飛散之疑慮的路徑的情況下,仍然可以藉由適用本發明之晶圓之處理方法,而得到保護器件晶片免於受到粉塵等影響之效果。
10:晶圓
10a:正面
10b:背面
12:器件
14:分割預定線
20:切削裝置
21:切削單元
22:主軸殼體
23:主軸
24,52:切削刀片
25:刀片蓋
26:切削水導入口
27:切削水噴射噴嘴
28:洗淨水供給噴嘴
28a:噴嘴前端部
30:液態氮供給單元
32:液態氮供給噴嘴
34:液態氮
40:熱壓接器
42:加熱輥
42a:表面
50:切斷組件
60:磨削裝置
61,71:工作夾台
62:磨削單元
63:旋轉主軸
64:輪座
65:磨削輪
66:磨削磨石
70:雷射加工裝置
72:雷射光線照射單元
73:聚光器
100:分割溝
102,110:切削溝
120:改質層
F:環狀框架
Fa:開口
Fb:一面
Fc:另一面
LB:雷射光線
R1~R10:箭頭
S:作業空間
T1:切割膠帶
T2:片材
T2a:外側區域的片材
T2b:內側區域的片材
T3:保護膠帶
U1:框架單元
U2:封裝單元
W:洗淨水
X,Y,Z:箭頭(方向)
圖1是顯示框架單元形成步驟之實施態樣的立體圖。
圖2是顯示分割步驟之實施態樣的立體圖。
圖3是顯示洗淨步驟之實施態樣的立體圖。
圖4之(a)~(d)是顯示封裝單元形成步驟以及非活性氣體充填步驟之實施態樣的立體圖。
圖5之(a)是顯示分割步驟之其他的實施態樣中的形成切削溝之態樣的立體圖,(b)是顯示形成有切削溝之晶圓的剖面圖,(c)是顯示將保護膠帶貼附於形成有切削溝之晶圓的情形的立體圖。
圖6之(a)是顯示正在磨削晶圓的背面之狀態的立體圖,(b)是顯示藉由晶圓的背面磨削而沿著切削溝分割晶圓之態樣的立體圖。
圖7是顯示沿著分割預定線在晶圓的內部形成改質層之態樣的立體圖。
圖8之(a)是沿著分割預定線在晶圓的內部形成有改質層之晶圓的背面側立體圖,(b)是在內部形成有改質層之晶圓的剖面圖。
10:晶圓
30:液態氮供給單元
32:液態氮供給噴嘴
34:液態氮
40:熱壓接器
42:加熱輥
42a:表面
50:切斷組件
52:切削刀片
100:分割溝
110:切削溝
F:環狀框架
Fc:另一面
R4~R8:箭頭
S:作業空間
T1:切割膠帶
T2:片材
T2a:外側區域的片材
T2b:內側區域的片材
U1:框架單元
U2:封裝單元
Claims (8)
- 一種晶圓之處理方法,前述晶圓於正面形成有被交叉之複數條分割預定線所區劃的複數個器件,前述晶圓之處理方法具備有以下步驟: 框架單元形成步驟,將該晶圓容置於在中央部具有容置該晶圓之開口的環狀框架的該開口,將切割膠帶貼附於該環狀框架的一面並且貼附該晶圓,而形成框架單元; 分割步驟,對該晶圓的該分割預定線進行加工來分割成一個個的器件晶片; 封裝單元形成步驟,在該環狀框架的另一面貼附片材,而以該切割膠帶與該片材包圍該晶圓而形成封裝單元;及 搬送步驟,搬送該封裝單元。
- 如請求項1之晶圓之處理方法,其更具備有將非活性氣體充填於該封裝單元的內部之非活性氣體充填步驟。
- 如請求項2之晶圓之處理方法,其中該非活性氣體充填步驟是藉由在非活性氣體的氣體環境下實施該封裝單元形成步驟,來將非活性氣體充填於該封裝單元的內部。
- 如請求項2之晶圓之處理方法,其中該非活性氣體充填步驟是在該封裝單元形成步驟中,將液態氮充填於該封裝單元的內部並使其膨脹。
- 如請求項1之晶圓之處理方法,其更具備有洗淨步驟,前述洗淨步驟是在該封裝單元形成步驟之前洗淨該晶圓。
- 如請求項1之晶圓之處理方法,其中該片材為熱壓接片材, 在該封裝單元形成步驟中,該熱壓接片材熱壓接於該環狀框架的另一面。
- 如請求項6之晶圓之處理方法,其中該熱壓接片材是聚烯烴系片材,且是選自由聚乙烯片材、聚丙烯片材以及聚苯乙烯片材所構成的群組。
- 如請求項7之晶圓之處理方法,其中將該熱壓接片材熱壓接於該環狀框架的另一面時的加熱溫度,在該熱壓接片材為該聚乙烯片材的情況下是120~140℃,在為該聚丙烯片材的情況下是160~180℃,在為該聚苯乙烯片材的情況下是220~240℃。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022096404A JP2023183035A (ja) | 2022-06-15 | 2022-06-15 | ウエーハの取り扱い方法 |
JP2022-096404 | 2022-06-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202401544A true TW202401544A (zh) | 2024-01-01 |
Family
ID=88974937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW112121872A TW202401544A (zh) | 2022-06-15 | 2023-06-12 | 晶圓之處理方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230411180A1 (zh) |
JP (1) | JP2023183035A (zh) |
KR (1) | KR20230172411A (zh) |
CN (1) | CN117238779A (zh) |
DE (1) | DE102023205221A1 (zh) |
TW (1) | TW202401544A (zh) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10242083A (ja) | 1997-02-26 | 1998-09-11 | Disco Abrasive Syst Ltd | ダイシング方法 |
JP2010183014A (ja) | 2009-02-09 | 2010-08-19 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP7154860B2 (ja) | 2018-07-31 | 2022-10-18 | 株式会社ディスコ | ウエーハの加工方法 |
-
2022
- 2022-06-15 JP JP2022096404A patent/JP2023183035A/ja active Pending
-
2023
- 2023-06-02 US US18/328,310 patent/US20230411180A1/en active Pending
- 2023-06-05 DE DE102023205221.0A patent/DE102023205221A1/de active Pending
- 2023-06-07 KR KR1020230072546A patent/KR20230172411A/ko unknown
- 2023-06-07 CN CN202310672020.2A patent/CN117238779A/zh active Pending
- 2023-06-12 TW TW112121872A patent/TW202401544A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20230411180A1 (en) | 2023-12-21 |
CN117238779A (zh) | 2023-12-15 |
DE102023205221A1 (de) | 2023-12-21 |
JP2023183035A (ja) | 2023-12-27 |
KR20230172411A (ko) | 2023-12-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6739873B2 (ja) | ウェーハの加工方法 | |
KR102505700B1 (ko) | 웨이퍼의 가공 방법 | |
TWI641036B (zh) | 晶圓之加工方法 | |
JP2018113281A (ja) | 樹脂パッケージ基板の加工方法 | |
KR20160146537A (ko) | 웨이퍼의 가공 방법 | |
KR20150140215A (ko) | 웨이퍼 가공 방법 | |
TW201719745A (zh) | 晶圓的加工方法 | |
TW201820437A (zh) | 晶圓的加工方法 | |
JP7430515B2 (ja) | ウエーハの処理方法 | |
TW202401544A (zh) | 晶圓之處理方法 | |
TWI822984B (zh) | 積層器件晶片之製造方法 | |
CN112420584A (zh) | 晶片的加工方法 | |
JP2021174920A (ja) | ウエーハの加工方法 | |
JP7413032B2 (ja) | ウエーハの加工方法 | |
JP2020098827A (ja) | ウエーハの加工方法 | |
JP7461118B2 (ja) | ウエーハの加工方法 | |
US11651989B2 (en) | Wafer transferring method | |
KR20240002696A (ko) | 마스크의 형성 방법 | |
JP2023080511A (ja) | ウエーハの処理方法 | |
JP2023078910A (ja) | ウエーハの加工方法 | |
JP2021153126A (ja) | 被加工物の加工方法 | |
JP2023077664A (ja) | ウエーハの加工方法 | |
JP2022021441A (ja) | ウエーハの加工方法 | |
JP2024044603A (ja) | ウエーハの加工方法 | |
JP6475060B2 (ja) | レーザー加工方法 |