TW202339058A - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TW202339058A
TW202339058A TW112102916A TW112102916A TW202339058A TW 202339058 A TW202339058 A TW 202339058A TW 112102916 A TW112102916 A TW 112102916A TW 112102916 A TW112102916 A TW 112102916A TW 202339058 A TW202339058 A TW 202339058A
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TW
Taiwan
Prior art keywords
temperature
substrate
container
processing
period
Prior art date
Application number
TW112102916A
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English (en)
Chinese (zh)
Inventor
福井祥吾
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202339058A publication Critical patent/TW202339058A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
TW112102916A 2022-02-08 2023-01-30 基板處理裝置及基板處理方法 TW202339058A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-018193 2022-02-08
JP2022018193 2022-02-08

Publications (1)

Publication Number Publication Date
TW202339058A true TW202339058A (zh) 2023-10-01

Family

ID=87564119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112102916A TW202339058A (zh) 2022-02-08 2023-01-30 基板處理裝置及基板處理方法

Country Status (6)

Country Link
US (1) US20250140585A1 (https=)
JP (1) JP7738685B2 (https=)
KR (1) KR20240148851A (https=)
CN (1) CN118633142A (https=)
TW (1) TW202339058A (https=)
WO (1) WO2023153222A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506461B2 (ja) * 2010-03-05 2014-05-28 東京エレクトロン株式会社 超臨界処理装置及び超臨界処理方法
US8453656B2 (en) * 2010-06-25 2013-06-04 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and MEMS devices
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP5843277B2 (ja) * 2011-07-19 2016-01-13 株式会社東芝 半導体基板の超臨界乾燥方法及び装置
KR102267913B1 (ko) * 2019-06-27 2021-06-23 세메스 주식회사 기판 처리 장치
JP7493325B2 (ja) * 2019-11-25 2024-05-31 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
US20250140585A1 (en) 2025-05-01
WO2023153222A1 (ja) 2023-08-17
CN118633142A (zh) 2024-09-10
KR20240148851A (ko) 2024-10-11
JP7738685B2 (ja) 2025-09-12
JPWO2023153222A1 (https=) 2023-08-17

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