CN118633142A - 基片处理装置和基片处理方法 - Google Patents

基片处理装置和基片处理方法 Download PDF

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Publication number
CN118633142A
CN118633142A CN202380019176.9A CN202380019176A CN118633142A CN 118633142 A CN118633142 A CN 118633142A CN 202380019176 A CN202380019176 A CN 202380019176A CN 118633142 A CN118633142 A CN 118633142A
Authority
CN
China
Prior art keywords
temperature
substrate
container
corrected
substrate processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380019176.9A
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English (en)
Chinese (zh)
Inventor
福井祥吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN118633142A publication Critical patent/CN118633142A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
CN202380019176.9A 2022-02-08 2023-01-26 基片处理装置和基片处理方法 Pending CN118633142A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-018193 2022-02-08
JP2022018193 2022-02-08
PCT/JP2023/002392 WO2023153222A1 (ja) 2022-02-08 2023-01-26 基板処理装置、および基板処理方法

Publications (1)

Publication Number Publication Date
CN118633142A true CN118633142A (zh) 2024-09-10

Family

ID=87564119

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380019176.9A Pending CN118633142A (zh) 2022-02-08 2023-01-26 基片处理装置和基片处理方法

Country Status (6)

Country Link
US (1) US20250140585A1 (https=)
JP (1) JP7738685B2 (https=)
KR (1) KR20240148851A (https=)
CN (1) CN118633142A (https=)
TW (1) TW202339058A (https=)
WO (1) WO2023153222A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506461B2 (ja) * 2010-03-05 2014-05-28 東京エレクトロン株式会社 超臨界処理装置及び超臨界処理方法
US8453656B2 (en) * 2010-06-25 2013-06-04 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and MEMS devices
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP5843277B2 (ja) * 2011-07-19 2016-01-13 株式会社東芝 半導体基板の超臨界乾燥方法及び装置
KR102267913B1 (ko) * 2019-06-27 2021-06-23 세메스 주식회사 기판 처리 장치
JP7493325B2 (ja) * 2019-11-25 2024-05-31 東京エレクトロン株式会社 基板処理装置

Also Published As

Publication number Publication date
US20250140585A1 (en) 2025-05-01
TW202339058A (zh) 2023-10-01
WO2023153222A1 (ja) 2023-08-17
KR20240148851A (ko) 2024-10-11
JP7738685B2 (ja) 2025-09-12
JPWO2023153222A1 (https=) 2023-08-17

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