KR20240148851A - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR20240148851A
KR20240148851A KR1020247028696A KR20247028696A KR20240148851A KR 20240148851 A KR20240148851 A KR 20240148851A KR 1020247028696 A KR1020247028696 A KR 1020247028696A KR 20247028696 A KR20247028696 A KR 20247028696A KR 20240148851 A KR20240148851 A KR 20240148851A
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KR
South Korea
Prior art keywords
temperature
substrate
processing
period
correction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247028696A
Other languages
English (en)
Korean (ko)
Inventor
쇼고 후쿠이
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240148851A publication Critical patent/KR20240148851A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H01L21/67248—
    • H01L21/02057—
    • H01L21/02101—
    • H01L21/67034—
    • H01L21/67103—
    • H01L21/67109—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
KR1020247028696A 2022-02-08 2023-01-26 기판 처리 장치 및 기판 처리 방법 Pending KR20240148851A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022018193 2022-02-08
JPJP-P-2022-018193 2022-02-08
PCT/JP2023/002392 WO2023153222A1 (ja) 2022-02-08 2023-01-26 基板処理装置、および基板処理方法

Publications (1)

Publication Number Publication Date
KR20240148851A true KR20240148851A (ko) 2024-10-11

Family

ID=87564119

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247028696A Pending KR20240148851A (ko) 2022-02-08 2023-01-26 기판 처리 장치 및 기판 처리 방법

Country Status (6)

Country Link
US (1) US20250140585A1 (https=)
JP (1) JP7738685B2 (https=)
KR (1) KR20240148851A (https=)
CN (1) CN118633142A (https=)
TW (1) TW202339058A (https=)
WO (1) WO2023153222A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026348A (ja) 2011-07-19 2013-02-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5506461B2 (ja) * 2010-03-05 2014-05-28 東京エレクトロン株式会社 超臨界処理装置及び超臨界処理方法
US8453656B2 (en) * 2010-06-25 2013-06-04 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and MEMS devices
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
KR102267913B1 (ko) * 2019-06-27 2021-06-23 세메스 주식회사 기판 처리 장치
JP7493325B2 (ja) * 2019-11-25 2024-05-31 東京エレクトロン株式会社 基板処理装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013026348A (ja) 2011-07-19 2013-02-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置

Also Published As

Publication number Publication date
US20250140585A1 (en) 2025-05-01
TW202339058A (zh) 2023-10-01
WO2023153222A1 (ja) 2023-08-17
CN118633142A (zh) 2024-09-10
JP7738685B2 (ja) 2025-09-12
JPWO2023153222A1 (https=) 2023-08-17

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