WO2023153222A1 - 基板処理装置、および基板処理方法 - Google Patents

基板処理装置、および基板処理方法 Download PDF

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Publication number
WO2023153222A1
WO2023153222A1 PCT/JP2023/002392 JP2023002392W WO2023153222A1 WO 2023153222 A1 WO2023153222 A1 WO 2023153222A1 JP 2023002392 W JP2023002392 W JP 2023002392W WO 2023153222 A1 WO2023153222 A1 WO 2023153222A1
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Prior art keywords
temperature
substrate
container
processing
period
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Ceased
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PCT/JP2023/002392
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English (en)
French (fr)
Japanese (ja)
Inventor
祥吾 福井
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2023580165A priority Critical patent/JP7738685B2/ja
Priority to KR1020247028696A priority patent/KR20240148851A/ko
Priority to US18/835,377 priority patent/US20250140585A1/en
Priority to CN202380019176.9A priority patent/CN118633142A/zh
Publication of WO2023153222A1 publication Critical patent/WO2023153222A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Definitions

  • the present disclosure relates to a substrate processing apparatus and a substrate processing method.
  • Patent Document 1 discloses a substrate processing apparatus that performs substrate processing by supplying a supercritical fluid to the inside of a processing container to dry the substrate.
  • the supercritical fluid is designed to directly transfer the liquid film formed on the substrate from the supercritical state where there is no gas-liquid interface to the gas phase (i.e., so that the surface tension does not act on the uneven pattern of the substrate). dry.
  • This type of substrate processing apparatus promotes uniformity in process performance for each substrate processing by appropriately controlling the temperature for each substrate processing that is repeated multiple times.
  • the present disclosure provides a technique that can further promote the uniformity of temperature for each substrate processing.
  • a substrate processing apparatus for drying a substrate having a liquid film using a supercritical fluid, comprising: a processing container housing the substrate; a heating mechanism that heats the inside of the processing container; a temperature measurement unit that measures the temperature inside the processing container; a control unit that controls the fluid supply unit and the heating mechanism; wherein the control unit acquires temperature information inside the processing container measured by the temperature measurement unit over a period from loading the substrate into the processing container until unloading the substrate, Stores temperature time data in which the temperature information and time are linked, extracts the temperature during the temperature adjustment target period from the stored temperature time data, and extracts the temperature during the temperature adjustment target period and a pre-stored reference temperature.
  • a substrate processing apparatus that determines whether or not correction of the temperature when the heating mechanism heats is necessary based on the comparison with the temperature.
  • FIG. 1 is a schematic perspective view showing a substrate processing apparatus according to one embodiment
  • FIG. 2 is a schematic side sectional view showing the substrate processing apparatus of FIG. 1
  • FIG. It is a flow chart which shows the substrate processing method which a substrate processing device performs. It is a graph which shows the temperature change inside the processing container in each process of supercritical drying.
  • FIG. 5 is a schematic explanatory diagram illustrating the in-plane temperature distribution of a substrate when it is placed in a processing chamber without correcting the temperature after supercritical drying is performed multiple times;
  • FIG. 6A is a schematic plan view showing the configuration of the heating mechanism provided on the ceiling wall side of the processing container.
  • FIG. 6B is a schematic perspective view showing an enlarged sensor heater unit.
  • FIG. 3 is a block diagram showing functional units of a control unit that performs temperature stabilization control and temperature distribution uniformity control
  • FIG. 4 is a flow chart showing a substrate processing method including temperature stabilization control and temperature distribution uniformity control
  • It is a schematic side cross-sectional view showing a substrate processing apparatus according to a modification.
  • the substrate processing apparatus 1 performs substrate processing for drying the substrate W by replacing a liquid film of the drying liquid formed on the substrate W with a supercritical fluid (hereinafter, drying using the supercritical fluid is referred to as supercritical fluid). (also called dry).
  • supercritical fluid is a fluid in which liquid and gas are indistinguishable by being placed at a temperature above the critical temperature and a pressure above the critical pressure. If a liquid film such as a dry liquid is replaced with a supercritical fluid, the interface between the liquid and the gas in the uneven pattern of the substrate W can be eliminated. As a result, the surface tension of the liquid is no longer generated, and collapse of the uneven pattern can be suppressed.
  • the dry liquid forming the liquid film is, for example, an organic solvent such as IPA (isopropyl alcohol).
  • organic solvent such as IPA (isopropyl alcohol).
  • supercritical fluids include carbon dioxide, ethanol, methanol, propanol, butanol, methane, ethane, propane, water, ammonia, ethylene, and fluoromethane. An example using carbon dioxide as the supercritical fluid will be described below as a representative example.
  • the substrate processing apparatus 1 includes a processing container 10 , a fluid supply unit 30 that supplies fluid to the processing container 10 , a fluid discharge unit 40 that discharges the fluid from the processing container 10 , and a substrate transport unit that transports a substrate W to the processing container 10 . It has a unit 50 and a heating mechanism 60 that heats the processing container 10 . Furthermore, the substrate processing apparatus 1 includes a control section 90 that controls the operation of each component.
  • the processing container 10 is formed in a substantially rectangular box shape, accommodates the substrates W having a liquid film of the drying liquid in the internal processing chamber 11, and processes the substrates W.
  • the processing chamber 11 presents a rectangular parallelepiped space that is wide in the horizontal direction and narrow in the vertical direction in order to accommodate the thin and circular substrate W.
  • a ceiling wall 12 and a floor wall 13 surrounding the processing chamber 11 in the processing vessel 10 are configured to be thicker than the processing chamber 11 in the vertical direction.
  • the processing container 10 has a recessed space 14 in front of which the vertical intermediate portion is recessed rearward (processing chamber 11 side).
  • a loading/unloading mechanism 15 for fixing the substrate transfer unit 50 when the substrate W is loaded into the processing chamber 11 is formed in front of the processing container 10 .
  • the loading/unloading mechanism 15 has a front open portion 14 f for allowing the substrate transfer section 50 to enter the recessed space 14 , and has a loading/unloading port 15 p communicating with the processing chamber 11 at the rear of the recessed space 14 .
  • each through-hole 18 is formed in each of the upper wall 16 and the lower wall 17 of the processing vessel 10 with the recessed space 14 interposed therebetween.
  • Each through-hole 18 of the upper wall 16 and each through-hole 18 of the lower wall 17 are rectangular in plan view and face each other.
  • the loading/unloading mechanism 15 accommodates front closing members 19 in a pair of through holes 18 on the lower wall 17 side.
  • the loading/unloading mechanism 15 has an elevation driving unit 20 below the processing container 10 that simultaneously raises and lowers the plurality of front blocking members 19 .
  • Each front closing member 19 is formed in a rectangular parallelepiped block, and moves up and down in each through hole 18 along the vertical direction under the operation of the up-and-down drive unit 20 .
  • each front blocking member 19 passes through the through holes 18 of the lower wall 17 , through the recessed space 14 , and further through the through holes 18 of the upper wall 16 . is inserted into The loading/unloading mechanism 15 arranges the front blocking members 19 over the through holes 18 of the upper wall 16 and the through holes 18 of the lower wall 17 to firmly fix the substrate transfer section 50 to the processing container 10 . be able to.
  • the processing container 10 has a recessed space 21 at the rear thereof, the vertical middle portion of which is recessed forward (toward the processing chamber 11).
  • a fluid ejection fixing mechanism 22 is configured for fixing a first supply header 27 for ejecting the supercritical fluid.
  • the fluid ejection fixing mechanism 22 has an arrangement portion 21 r communicating with the processing chamber 11 on the front side of the recessed space 21 .
  • the first supply header 27 is accommodated in this placement portion 21r.
  • one or more (two in this embodiment) through-holes 25 are formed in each of the upper wall 23 and the lower wall 24 of the processing vessel 10 with the recessed space 21 interposed therebetween. there is Each through hole 25 of the upper wall 23 and each through hole 25 of the lower wall 24 face each other.
  • a rear closing member 26 for fixing the first supply header 27 is previously inserted into each through hole 25 .
  • the rear blocking member 26 is fixed so as not to move during operation such as supercritical drying, and is removed during maintenance or the like so that the first supply header 27 can be taken out from the processing vessel 10 .
  • the first supply header 27 airtightly closes the rear of the processing chamber 11 by being accommodated in the arrangement portion 21r of the processing container 10 .
  • the first supply header 27 is connected to the fluid supply section 30 and has a plurality of ejection openings 27a for ejecting the supercritical fluid onto the exposed surface of the processing chamber 11 .
  • the plurality of ejection ports 27 a are arranged in a line at equal intervals along the lateral direction (horizontal direction) of the processing chamber 11 .
  • the processing container 10 also includes a second supply header 28 at the center position of the floor wall 13 in the front-rear direction.
  • the second supply header 28 is also connected to the fluid supply section 30 and has a plurality of ejection openings 28 a for ejecting the supercritical fluid onto the exposed surface of the processing chamber 11 .
  • the plurality of ejection ports 28 a are arranged in a line at equal intervals along the lateral direction (horizontal direction) of the processing chamber 11 .
  • the fluid supply unit 30 has a supply path 31 connected to the first supply header 27 and the second supply header 28 and supplies the supercritical fluid through the supply path 31 .
  • the supply path 31 is connected to a fluid source (not shown) at its upstream end, and branches midway along the first supply header 27 and the second supply header 28 .
  • the fluid supply unit 30 includes a supply-side heater 32 , a pump, a flow rate regulator, an opening/closing valve, etc. (not shown) in the middle of the supply path 31 .
  • the fluid supply unit 30 is connected to the control unit 90 of the substrate processing apparatus 1 and each configuration is controlled by the control unit 90 .
  • a high-pressure tank or the like is applied as the fluid source, and the supercritical fluid (CO 2 ) stored in the tank flows out to the supply path 31 .
  • the supply-side heater 32 heats the supercritical fluid supplied from the fluid source and maintains the temperature of the supercritical fluid above the critical temperature.
  • the supply-side heater 32 is provided, for example, over substantially the entire supply path 31 .
  • a flow rate regulator and an opening/closing valve are provided at each branch of the supply path 31 to adjust the supply amount of the supercritical fluid and switch between supply and supply stop.
  • the fluid discharge unit 40 has a discharge path 41 connected to the discharge header 29 of the processing container 10 and discharges the fluid inside the processing chamber 11 through the discharge path 41 .
  • the discharge header 29 is provided on the front side of the floor wall 13 of the processing container 10 (on the loading/unloading port 15p side).
  • a discharge port 29 a of the discharge header 29 is open on the upper surface of the floor wall 13 so as to communicate with the processing chamber 11 .
  • the fluid discharged to the outside of the processing container 10 through the discharge header 29 includes not only the supercritical fluid but also the vapor of the dry liquid dissolved in the supercritical fluid.
  • the fluid discharge unit 40 includes a discharge-side heater 42, and a flow rate regulator (not shown), a pressure reducing valve, an opening/closing valve, a temperature sensor, a pressure sensor, a flow rate sensor, etc. in the middle of the discharge path 41. Further, the downstream end of the discharge path 41 is connected to a discharge mechanism (not shown) for processing the discharged supercritical fluid.
  • the discharge-side heater 42 suppresses liquefaction of fluid in the discharge path 41 .
  • the discharge-side heater 42 is provided, for example, over the entire discharge path 41 .
  • the substrate transfer section 50 is installed in front of the processing container 10, and receives or delivers the substrate W to/from a transfer device (not shown). Further, the substrate transfer unit 50 moves the substrates W relative to the processing container 10 to store the substrates W into the processing container 10 or take out the substrates W from the processing container 10 .
  • the substrate processing apparatus 1 according to the present embodiment performs supercritical drying, which is substrate processing, while the substrate W is held by the substrate transfer section 50 .
  • the substrate transport unit 50 includes a substrate holder 51 that holds the substrate W, an advance/retreat operation unit 54 that advances and retreats the substrate holder 51 with respect to the processing container 10, and a substrate W that is lifted and lowered for transport. and a lift pin mechanism 55 for receiving and transferring substrates W to and from the apparatus.
  • the substrate holder 51 also has a tray 52 on which the substrate W is placed and a lid 53 provided on the front side of the tray 52 .
  • the tray 52 is configured in a rectangular frame that is slightly larger in diameter than the substrate W, and is supported by a lid body 53 so as to extend in the horizontal direction. When the tray 52 holds the substrate W horizontally, the surface of the substrate W having the liquid film faces upward in the vertical direction.
  • the lid 53 is formed in a rectangular parallelepiped block, and moves integrally with the tray 52 to enter the recessed space 14 to block the loading/unloading port 15p of the processing container 10 .
  • At least one of the lid 53 and the rear portion of the processing container 10 may be provided with a sealing member (not shown) that seals the processing chamber 11 in an airtight manner.
  • the loading/unloading mechanism 15 prevents the lid 53 from moving to the front open portion 14f by raising the front closing member 19 while the lid 53 blocks the loading/unloading port 15p. Accordingly, the substrate processing apparatus 1 can prevent relative movement of the substrate holder 51 with respect to the processing container 10 during supercritical drying.
  • the advance/retreat operation unit 54 is connected to the control unit 90 of the substrate processing apparatus 1 and slides the substrate holder 51 along the horizontal direction under the control of the control unit 90 .
  • the advancing/retracting operation unit 54 is positioned between an outer position where the substrate W is received and transferred and an inner position where the tray 52 is arranged in the processing chamber 11 and the loading/unloading port 15p is blocked by the lid 53. 51 is reciprocated.
  • the lift pin mechanism 55 raises and lowers a plurality of (three or more) lift pins 56 to receive and deliver the substrate W to and from the transport device.
  • the lift pin mechanism 55 includes, in addition to the lift pins 56, a drive source connected to the control unit 90 and a drive transmission unit that transmits the drive force of the drive source to the lift pins 56 (both not shown). ).
  • the heating mechanism 60 heats the inside of the processing chamber 11 from above and below by heating the ceiling wall 12 and the floor wall 13 of the processing container 10, and maintains the inside of the processing chamber 11 at a predetermined temperature. .
  • a specific configuration of the heating mechanism 60 will be described in detail later.
  • the substrate processing apparatus 1 also includes a temperature measurement unit 70 that measures the temperature of the substrates W accommodated in the processing chamber 11 and transmits the temperature information to the control unit 90 .
  • the temperature measurement unit 70 includes an indoor temperature sensor 71 that measures the temperature of the processing chamber 11, and a plurality of heater temperature sensors 72 that measure the temperature of each of a plurality of sensor heater units 61 of the heating mechanism 60, which will be described later.
  • the substrate processing apparatus 1 may include either one of the room temperature sensor 71 and each heater temperature sensor 72 as a configuration for acquiring the temperature of the processing chamber 11 .
  • a computer having a processor 91, a memory 92, an input/output interface (not shown), an electronic circuit, and the like can be applied to the control unit 90 of the substrate processing apparatus 1.
  • the processor 91 includes one or more of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), a circuit consisting of a plurality of discrete semiconductors, etc. It is a combination.
  • the memory 92 is an appropriate combination of volatile memory and nonvolatile memory (for example, compact disc, DVD (Digital Versatile Disc), hard disk, flash memory, etc.).
  • the control unit 90 may apply an integrated control device that controls the operations of a plurality of substrate processing apparatuses. good.
  • the memory 92 stores programs for controlling various processes executed in the substrate processing apparatus 1 .
  • the control unit 90 controls the operation of each component of the substrate processing apparatus 1 by causing the processor 91 to execute programs stored in the memory 92 .
  • the control unit 90 executes, for example, the processing flow of the substrate processing method shown in FIG.
  • the substrate W is accommodated in the processing chamber 11 of the processing vessel 10 in the pre-processing step of step S1.
  • the control unit 90 of the substrate processing apparatus 1 lifts the lift pins 56 to receive the substrate W having the dry liquid film from the transfer device, and lowers the lift pins 56 to lift the tray of the substrate holder 51 .
  • a substrate W is placed on 52 .
  • the control unit 90 operates the advancing/retreating operation unit 54 to slide the substrate holder 51 in the horizontal direction so that the substrate W is accommodated in the processing chamber 11 through the loading/unloading port 15p.
  • the control unit 90 operates the elevation driving unit 20 of the loading/unloading mechanism 15 to move the front blocking members 19 to the upper wall.
  • the cover member 53 is fixed by advancing to each of the 16 through-holes 18, and the processing chamber 11 is sealed.
  • the control unit 90 controls the fluid supply unit 30 to supply the supercritical fluid to the processing chamber 11 of the processing container 10, while blocking the discharge path 41 of the fluid discharge unit 40. do.
  • the internal pressure of the processing chamber 11 is increased to a set pressure equal to or higher than the critical pressure of the supercritical fluid.
  • the control unit 90 supplies the supercritical fluid to the processing chamber 11 only from the second supply header 28, thereby suppressing shaking of the drying liquid on the upper surface of the substrate W and preventing the uneven pattern from collapsing. do.
  • the control unit 90 controls the fluid supply unit 30 to supply the supercritical fluid to the processing chamber 11, and causes the fluid discharge unit 40 to discharge the fluid from the processing chamber 11.
  • a supercritical fluid is circulated above the substrate (W).
  • the controller 90 discharges the supercritical fluid into the processing chamber 11 from both the first supply header 27 and the second supply header 28 .
  • the control unit 90 controls each flow rate regulator so that the flow rate of the supercritical fluid supplied by the fluid supply unit 30 and the flow rate of the fluid discharged by the fluid discharge unit 40 are equal to each other, so that the inside of the processing container 10 Maintain pressure at set pressure.
  • the liquid film of the drying liquid is dissolved in the supercritical fluid and replaced with the supercritical fluid, and the substrate W is dried.
  • the dry liquid dissolved in the supercritical fluid is discharged to the outside of the processing container 10 through the discharge path 41 together with the supercritical fluid.
  • step S4 the control unit 90 stops the supply of the supercritical fluid by the fluid supply unit 30, and continues the discharge of the fluid from the processing chamber 11 by the fluid discharge unit 40.
  • the internal pressure is reduced to about atmospheric pressure (0.1 MPa).
  • the control unit 90 controls the elevation driving unit 20 to lower the front closing member 19, and further operates the advance/retreat operation unit 54 to move the substrate holder 51 out of the processing container 10. retreat.
  • the cover 53 opens the loading/unloading port 15 p of the processing container 10 and the substrate W placed on the tray 52 is carried out of the processing container 10 .
  • the controller 90 lifts the lift pins 56 to float the substrate W from the tray 52, and transfers the substrate W to the conveying device that has moved.
  • the control unit 90 controls the output of the heating mechanism 60 based on the set temperature of the heating mechanism 60 to heat the processing chamber 11 and the substrate W.
  • the output of the heating mechanism 60 is represented by the amount of heat generated per unit time. While the set temperature of the heating mechanism 60 is constant, the controller 90 controls the output of the heating mechanism 60 to be constant. While the set temperature of the heating mechanism 60 is constant, the actual temperature of the processing chamber 11 (for example, the substrate W) fluctuates over time as shown in the graph of FIG. 4, for example. In the graph of FIG. 4, the horizontal axis is time, and the vertical axis is the temperature of the processing chamber 11. As shown in FIG.
  • the set temperature of the heating mechanism 60 is basically the same temperature in all processes, but may be corrected at desired timing. When the set temperature of the heating mechanism 60 is corrected, the output of the heating mechanism 60 is also corrected.
  • control unit 90 heats the processing chamber 11 with the heating mechanism 60 .
  • the temperature of the processing chamber 11 is adjusted to a state in which the pressurization step of supercritical drying can be started immediately.
  • control section 90 heats the processing chamber 11 with the heating mechanism 60 and supplies the supercritical fluid with the fluid supply section 30 .
  • the pressure in the processing chamber 11 rises due to the supply of the supercritical fluid, the temperature in the processing chamber 11 rises sharply.
  • the control unit 90 supplies and discharges the supercritical fluid while heating the processing chamber 11 with the heating mechanism 60 . Therefore, the temperature of the processing chamber 11 is maintained substantially constant at the optimum temperature for supercritical drying (temperature equal to or higher than the critical temperature).
  • the controller 90 heats the processing chamber 11 with the heating mechanism 60 and discharges the supercritical fluid with the fluid discharger 40 .
  • the temperature of the processing chamber 11 rapidly drops as the pressure of the processing chamber 11 decreases. After that, when the pressure drop in the processing chamber 11 becomes gradual, the temperature in the processing chamber 11 rises gradual. That is, the temperature of the processing chamber 11 in the depressurization step draws a curve having a trough.
  • control unit 90 heats the processing chamber 11 with the heating mechanism 60 in order to smoothly perform the next substrate processing. As a result, the temperature of the processing chamber 11 gradually rises following the decompression step.
  • the graph shown in FIG. 4 merely shows an example of temperature changes during supercritical drying.
  • the temperature of the processing chamber 11 fluctuates due to various factors.
  • the temperature of the processing chamber 11 after the pre-processing step varies for each supercritical drying (for each substrate processing) due to temperature changes associated with opening and closing of the loading/unloading port 15p, heat accumulation in the processing container 10 during supercritical drying, and the like.
  • temperature For example, the temperature of the processing chamber 11 gradually rises due to heat accumulation in the processing container 10 . After that, when the heat accumulation and the heat dissipation of the processing container 10 are balanced, the temperature of the processing chamber 11 becomes constant.
  • the graph shown in FIG. 4 is obtained by averaging the temperature of the entire processing chamber 11, and the temperature distribution of the substrates W accommodated in the processing chamber 11 may not be uniform.
  • the temperature of the substrate W before the pre-processing step tends to be higher on the inner side of the processing container 10 and lower on the loading/unloading port 15p side. This is because the heat tends to accumulate on the back side of the processing chamber 11, while the heat tends to escape on the loading/unloading port 15p side when the processing chamber 11 is opened.
  • the black portion of the substrate W is the portion where the temperature distribution of the substrate W is high.
  • the temperature stabilization control for controlling the temperature of the processing chamber 11 to be constant each time supercritical drying is performed, and the in-plane temperature distribution of the substrate W It is preferable to perform a uniform temperature distribution control that controls so that there is no difference in the temperature distribution.
  • the heating mechanism 60 for heating the processing container 10 of the substrate processing apparatus 1 includes a plurality of sensor heater units 61 (container heaters) for uniform temperature distribution control. Prepare. Each sensor heater unit 61 is dispersedly arranged at a position facing the substrate W moved to the inner position by the substrate transfer section 50 . Each sensor heater unit 61 is elongated along the vertical direction of the processing container 10 (see also FIG. 2). More specifically, a plurality of virtual concentric circles with different radii are set with the center of the substrate W at the inner position as a base point, and each sensor heater unit 61 is arranged at equal intervals in each virtual concentric circle, and is located outside the center. are provided so that the number increases toward the virtual concentric circles.
  • Each sensor heater unit 61 includes a plurality (for example, four) of rod-shaped heater main bodies 62, a cylinder 63 holding each heater main body 62, a heater temperature sensor 72 housed inside the cylinder 63, Prepare.
  • the plurality of heater main bodies 62 are formed thinner than the thickness of the cylindrical body 63 and are inserted into the plurality of peripheral holes 63b formed in the cylindrical body 63, respectively.
  • Each heater main body 62 is connected to a heating power supply unit 64 via wiring (not shown), and is individually heated by power supply from the heating power supply unit 64 .
  • the cylindrical body 63 is made of a material with high thermal conductivity, has a sensor placement hole 63a in the center, and has a plurality of peripheral holes 63b around the sensor placement hole 63a.
  • the heater temperature sensor 72 that constitutes the temperature measurement unit 70 is integrated with each heater main body 62 and the cylinder 63 by inserting a rod-shaped detector into the sensor arrangement hole 63 a of the cylinder 63 .
  • a non-contact radiation temperature sensor that collects infrared rays emitted from the substrate W and measures the temperature can be applied.
  • the radiant heater temperature sensor 72 can accurately detect the temperature applied to the substrate W by each heater main body 62 at the same point by measuring the temperature at the position facing the substrate W.
  • the heater temperature sensor 72 is installed at a position adjacent to each heater main body 62 that actually raises the temperature inside the cylindrical body 63, so that the temperature can be measured without being affected by the temperature outside the cylindrical body 63. can.
  • each heater temperature sensor 72 provided on the ceiling wall 12 measures the temperature of the upper surface of the substrate W
  • each heater temperature sensor 72 provided on the floor wall 13 measures the temperature of the lower surface of the substrate W. Measure the temperature.
  • the heater temperature sensor 72 on the ceiling wall 12 can measure the temperature of the liquid film.
  • each heater temperature sensor 72 on the floor wall 13 can directly detect the temperature of the substrate W by applying the tray 52 having holes at the opposing locations.
  • Each heater temperature sensor 72 is not limited to being provided on both the ceiling wall 12 and the floor wall 13, and may be provided on either one of them.
  • the control section 90 controls the heating power supply section 64 to adjust the amount of power supplied to each of the plurality of sensor heater units 61 .
  • each sensor heater unit 61 can adjust the temperature independently of each other. Therefore, for example, as shown in FIG. 5, when the temperature of the outer peripheral portion of the substrate W is high, if the temperature of the sensor heater unit 61 in the outer peripheral portion is lower than the temperature of the central portion of the substrate W, the surface of the substrate W is Uniformity of internal temperature distribution is promoted.
  • control unit 90 continuously samples the temperature of each step of supercritical drying, stores it in the memory 92, and performs the next supercritical drying based on the stored temperature information. Adjust to an appropriate temperature when performing. For this reason, as shown in FIG. 7, the control unit 90 includes an adjustment setting unit 100, a temperature acquisition unit 101, a temperature determination unit 102, a correction value calculation unit 103, and a temperature command unit 104 in performing supercritical drying. To construct.
  • the adjustment setting unit 100 sets a temperature adjustment target period for temperature adjustment in supercritical drying via a user interface (not shown) connected to the control unit 90 .
  • the temperature adjustment target period is the pre-treatment period during which the pre-treatment process is performed, the pressurization period during which the pressurization process is performed, the circulation period during which the circulation process is performed, the depressurization period during which the depressurization process is performed, and the post-treatment period. It may be set in units such as the post-treatment period, which is the period during which the process is performed.
  • the adjustment setting unit 100 displays a graph as shown in FIG. 4 to allow the user to select the temperature adjustment target period.
  • the temperature adjustment target period may be automatically set by the control unit 90 without depending on the user's operation. Thereby, the control unit 90 can flexibly adjust the temperature according to the time of each process in the recipe.
  • the temperature acquisition unit 101 acquires temperature information measured by the temperature measurement unit 70 in supercritical drying, and stores in the memory 92 temperature-time data linked with the temperature information and the time information. Therefore, the memory 92 stores the temperature-time data for each supercritical drying (each substrate processing) repeated multiple times.
  • the temperature time data stored in the memory 92 may be automatically erased when the substrate processing apparatus 1 is stopped, and new data may be stored when the substrate processing apparatus 1 is next started.
  • temperature time data is stored for each of the plurality of heater temperature sensors 72 .
  • the control unit 90 can monitor the temperature time data of each of the plurality of heater temperature sensors 72 every time supercritical drying is performed a plurality of times.
  • the temperature determination unit 102 determines whether or not to correct the temperature heated by each sensor heater unit 61 based on the stored temperature time data. For example, the temperature determination unit 102 compares the reference temperature in the temperature adjustment target period with the temperature information that applies to the temperature adjustment target period in the temperature time data measured in the current supercritical drying. Then, the temperature determination unit 102 determines that correction is necessary when the temperature information is equal to or higher than the reference temperature (or is deviated from the reference temperature by a predetermined amount or more), and the temperature information is lower than the reference temperature (or is different from the reference temperature). If the deviation is less than a predetermined value), it is determined that correction is unnecessary.
  • the temperature-time data acquired in the previous (previous) supercritical drying can be applied.
  • the substrate processing apparatus 1 can be adjusted so that the temperature is always constant as a result when supercritical drying is repeated a plurality of times.
  • the reference temperature may be an average value of a plurality of temperature-time data measured in the past, or optimal temperature-time data obtained through experiments, simulations, or the like may be prepared in advance.
  • the temperature determination unit 102 may compare the minimum temperature of the current decompression process with the minimum value of the reference temperature of the decompression process. . Then, if the minimum temperature this time is higher than the minimum value of the reference temperature by a predetermined amount or more, it is determined whether correction should be made. Note that as the number of times of supercritical drying increases, the minimum temperature in the depressurization process gradually rises due to heat accumulation in the processing container 10 . After that, when the heat storage and the heat dissipation of the processing container 10 are balanced, the minimum temperature of the decompression process becomes constant.
  • the temperature determination unit 102 uses temperature information from each heater temperature sensor 72 to determine the uniformity of the in-plane temperature distribution. For example, when the pressure rising process is set as the temperature adjustment target period of temperature distribution equalization control, the temperature determination unit 102 extracts the temperature measured by each heater temperature sensor 72 at the same time (for example, start time) of the pressure rising process. Then, the measured temperature is compared with a predetermined threshold range. Then, when the measured temperature is outside the predetermined threshold range, the temperature determination unit 102 determines that the sensor heater unit 61 having the heater temperature sensor 72 needs to be corrected. On the other hand, the temperature determination unit 102 determines that correction is unnecessary when the measured temperature is within the predetermined threshold range.
  • the correction value calculation unit 103 calculates a correction value for correcting the temperature of the sensor heater unit 61 when the temperature determination unit 102 determines to perform correction.
  • the correction value in the temperature stabilization control is calculated as an appropriate value for eliminating the difference by calculating the difference between the current temperature information in the temperature adjustment target period and the reference temperature in the same temperature adjustment target period.
  • the decompression process is set as the temperature adjustment target period of the temperature stabilization control
  • the correction value negative temperature
  • the set temperature for the next supercritical drying is the temperature to which the correction value (negative temperature) is added.
  • the temperature of the next supercritical drying will match or sufficiently approach the reference temperature, and the temperature of the post-treatment process and the temperature of the pre-treatment process and heating process of the next supercritical drying can be made uniform. can. That is, the lowest temperature in the depressurization step is the starting point for the temperature to rise thereafter, and the temperature of the processing chamber 11 can be easily controlled by matching the temperature at this starting point to the reference temperature.
  • the correction value in the uniform temperature distribution control is calculated as a value for eliminating the difference in temperature measured by each heater temperature sensor 72 during the temperature adjustment target period of the uniform temperature distribution control.
  • the pressure rising process is set as the temperature adjustment target period of the uniform temperature distribution control
  • the temperature measured by each heater temperature sensor 72 at the start of the current pressure rising process is monitored.
  • the correction value calculation unit 103 calculates the temperature of the sensor heater unit 61 having the heater temperature sensor 72. Calculate the correction value to lower.
  • the correction value for the temperature stabilization control is preferably calculated in consideration of the correction value for the temperature stabilization control. For example, if the correction value for temperature stabilization control is ⁇ 3° C. and the difference in temperature information from the heater temperature sensor 72 at the outer periphery of the substrate W is +2° C., the correction value calculation unit 103 calculates the heater temperature -5° C. is calculated as the correction value for the sensor 72 . Thereby, the control unit 90 can obtain a correction value including temperature stabilization control and temperature distribution uniformity control.
  • the temperature command unit 104 calculates the temperature parameter of each sensor heater unit 61 based on the correction value calculated by the correction value calculation unit 103 and the set temperature for supercritical drying.
  • the temperature parameter is the set temperature corrected based on the correction value when correction is required, and is the set temperature itself when correction is not required. Then, in the next supercritical drying, the temperature command unit 104 transmits command information of the calculated temperature parameter to the heating power supply unit 64 . Based on this command information, the heating power supply unit 64 adjusts the amount of power supplied to each sensor heater unit 61, so that each sensor heater unit 61 heats the substrate W accommodated in the processing container 10 at an appropriate temperature. Can be heated.
  • the substrate processing apparatus 1 is basically configured as described above, and operations (substrate processing method) including temperature stabilization control and temperature distribution uniformity control will be described below with reference to FIG. I will explain.
  • control unit 90 of the substrate processing apparatus 1 causes the adjustment setting unit 100 to set a temperature adjustment target period in supercritical drying (step S11).
  • a case will be described below in which temperature stabilization control is performed in the depressurization process and temperature distribution uniformity control is performed in the pressurization process.
  • step S12 the controller 90 of the substrate processing apparatus 1 performs supercritical drying.
  • the control unit 90 sequentially performs a pre-treatment process, a pressurization process, a circulation process, a depressurization process, and a post-treatment process along the process flow shown in FIG.
  • the supercritical drying is performed first after starting the substrate processing apparatus 1, the temperature of the heating mechanism 60 is controlled at the set temperature that has not been corrected.
  • the temperature acquisition unit 101 measures the temperature of the processing chamber 11 (substrate W) using the temperature measurement unit 70, acquires temperature information from the temperature measurement unit 70, and uses it as temperature time data. It is stored in the memory 92 (step S13).
  • control unit 90 reads out the current temperature-time data stored in the memory 92, and determines whether or not to correct the temperature in the next supercritical drying based on the temperature-time data. do.
  • the temperature determination unit 102 extracts the lowest temperature in the current depressurization process and compares it with the lowest value of the reference temperature held, thereby determining whether or not to correct the temperature stabilization control. Determine (step S14). Then, if the current minimum temperature is different from the minimum value of the reference temperature by a predetermined value or more, the temperature determination unit 102 determines whether correction of the temperature stabilization control should be performed, and proceeds to step S15. On the other hand, if the lowest temperature of this time is less than the predetermined value with respect to the lowest value of the reference temperature, the temperature determination unit 102 determines that the correction of the temperature stabilization control is not performed, skips step S15, and proceeds to step S16. move on.
  • step S15 the correction value calculator 103 calculates a correction value for temperature stabilization control. For example, if the current minimum temperature is higher than the minimum temperature of the reference temperature by a predetermined value or more, the correction value calculator 103 calculates a correction value that lowers the temperature of the heating mechanism 60 . Conversely, if the current minimum temperature is lower than the minimum temperature of the reference temperature by a predetermined value or less, the correction value calculator 103 calculates a correction value for raising the temperature of the heating mechanism 60 .
  • the temperature determination unit 102 uses the current temperature time data of each sensor heater unit 61 read from the memory 92 to determine whether or not to correct the uniform temperature distribution control in the temperature rising process (step S16). When the temperature of each sensor heater unit 61 is non-uniform, the temperature determination unit 102 determines whether correction of temperature distribution equalization control should be performed, and proceeds to step S17. On the other hand, when the temperature of each sensor heater unit 61 is uniform, the temperature determination unit 102 determines that the correction of the uniform temperature distribution control is not performed, skips step S17, and proceeds to step S18.
  • step S17 the correction value calculator 103 calculates a correction value for each sensor heater unit 61 in temperature distribution equalization control. For example, when the temperature of the outer peripheral portion of the substrate W is higher than the temperature of the central portion of the substrate W, the correction value calculator 103 calculates a correction value for lowering the temperature of the sensor heater unit 61 facing the outer peripheral portion of the substrate W. do. Further, when the correction value for the temperature stabilization control is calculated, the correction value calculation unit 103 calculates the correction value for each sensor heater unit 61 taking into account the correction value for the temperature stabilization control.
  • the temperature command unit 104 sets the temperature parameters of the heating mechanism 60 in the next supercritical drying (step S18). If it is determined that correction is necessary in the current supercritical drying, the temperature parameter is reset to the temperature parameter to which the correction value calculated by the correction value calculation unit 103 is added.
  • control unit 90 determines whether or not to perform the next supercritical drying (step S19), and when performing the next supercritical drying, returns to step S12, and repeats the same processing flow. Further, in the next supercritical drying, the temperature command unit 104 outputs command information of the set temperature parameter (corrected set temperature or uncorrected set temperature) to the heating power supply unit 64, so that the processing vessel The temperature of the substrate W contained within 10 can be adjusted appropriately.
  • the substrate processing apparatus 1 described above does not feed back the temperature measured by the temperature measuring unit 70 during supercritical drying, but heats the heating mechanism 60 with the temperature parameter set before supercritical drying (feedback). forward control). As a result, it is possible to stably equalize the temperature for each of a plurality of times of supercritical drying while suppressing slight fluctuations in the temperature of the processing container 10 .
  • the substrate processing apparatus 1 and the substrate processing method determine whether or not the set temperature of the heating mechanism 60 needs to be corrected based on the comparison between the temperature information of the temperature adjustment target period and the reference temperature. It is possible to promote the uniformity of the temperature every time. That is, when the temperature information deviates from the reference temperature, the set temperature of the heating mechanism 60 is corrected so that the temperature of the next substrate processing approaches the reference temperature. As a result, variations in temperature during substrate processing can be suppressed as much as possible, and process performance during substrate processing can be stabilized. As a result, the state of the uneven pattern of the substrate W can be maintained more reliably.
  • the substrate processing apparatus 1 can adjust the temperature for each substrate processing based on the lowest temperature in the decompression process by setting the decompression process of decompressing the processing chamber 11 as the temperature adjustment target period. As a result, the temperature at the starting point of the rising curve in which the temperature of the temperature adjustment rises is made uniform, so that it is possible to more easily facilitate the stabilization of the temperature.
  • the heating mechanism 60 includes a plurality of sensor heater units 61, the temperature of each sensor heater unit 61 can be independently adjusted for the substrate W accommodated in the processing chamber 11. Then, the controller 90 determines whether or not temperature correction is necessary for each of the sensor heater units 61, so that the in-plane temperature distribution of the substrate W can be easily made uniform.
  • the control unit 90 determines whether or not the temperature of each corresponding sensor-heater unit 61 needs to be corrected based on the temperature information of the heater temperature sensor 72 provided in each of the plurality of sensor-heater units 61 . . Therefore, the substrate processing apparatus 1 can adjust the temperature of each sensor heater unit 61 with higher accuracy.
  • the substrate processing apparatus 1 and the substrate processing method according to the present embodiment are not limited to the above embodiments, and various modifications can be made.
  • the substrate processing apparatus 1 is not limited to performing both the constant temperature control and the uniform temperature distribution control, and may be configured to perform only one of them.
  • the substrate processing apparatus 1 does not perform temperature distribution equalization control, but performs only temperature stabilization control that makes the temperature of the heating mechanism 60 constant for each supercritical drying (each substrate processing) during the temperature adjustment target period. It may be configured to perform Even in this case, since the temperature can be made uniform for each supercritical drying, the process performance can be stabilized, and the state of the uneven pattern of the substrate W can be maintained substantially constant.
  • the temperature adjustment target period in which temperature stabilization control is performed in supercritical drying is not limited to the depressurization process, and may be any of the pretreatment process, the pressurization process, the circulation process, and the posttreatment process.
  • the substrate processing apparatus 1 corrects the temperature before the substrate W is accommodated in the processing chamber 11 so as to match the temperature at the same timing as the temperature stabilization control in the pre-processing step, thereby stabilizing the process performance. can encourage transformation.
  • a similar effect can be obtained by correcting the temperature when the substrate W is taken out from the processing chamber 11 to be the same as the temperature stabilization control in the post-processing step.
  • the temperature at the start of the pressurizing step or when a predetermined pressure is reached can be corrected so as to match the temperature at the same timing, thereby stabilizing the process performance.
  • the temperature stabilization control in the distribution process the temperature irregularities in each supercritical drying can be suppressed by correcting the temperatures at the start and stop of the distribution process to be the same.
  • the temperature adjustment period during which temperature distribution homogenization control is performed in supercritical drying is not limited to the pressurization process, and may be any one of the pretreatment process, the distribution process, the depressurization process, and the posttreatment process.
  • the substrate processing apparatus 1 corrects the temperature of each sensor heater unit 61 before the substrate W is accommodated in the processing chamber 11 as temperature distribution uniformity control in the pre-processing step.
  • the accommodated substrate W can be uniformly heated.
  • a similar effect can also be obtained by performing a correction for uniforming the temperature of each sensor heater unit 61 when the substrate W is taken out from the processing chamber 11 as temperature distribution uniformity control in the post-treatment process.
  • temperature unevenness in each supercritical drying can be suppressed by performing a correction for uniforming the temperature at the start and stop of the circulation process as temperature distribution uniformity control in the circulation process.
  • the temperature inside the processing chamber 11 can be appropriately adjusted by correcting the minimum temperature during the depressurization process to equalize the temperature of each sensor heater unit 61 as temperature distribution equalization control in the depressurization process.
  • the substrate processing apparatus 1A according to the modification shown in FIG. , different from the substrate processing apparatus 1 described above.
  • a cooling inert gas for example, N 2 gas
  • the temperature control gas supply unit 80 includes a drive nozzle 81 and an external supply mechanism 82 that supplies the temperature control gas to the drive nozzle 81 .
  • the driven nozzle 81 has a base extending portion 81a that can advance and retreat with respect to the recessed space 14, and a tip extending portion that can enter and retreat from the protruding end of the base extending portion 81a into and out of the processing chamber 11 through the loading/unloading port 15p. 81b and are formed in an L shape.
  • the tip extending portion 81b of the driven nozzle 81 is configured to mechanically expand and contract, and has an ejection port (not shown) for ejecting temperature control gas at its tip.
  • an ejection port not shown
  • the drivable nozzle 81 is shown inserted into the loading/unloading port 15p through the through hole 18 of the upper wall 16, but the path for inserting the drivable nozzle into the loading/unloading port 15p is not particularly limited.
  • the loading/unloading port 15p may be accessed from the side of the processing container 10 .
  • the external supply mechanism 82 supplies and stops the temperature adjustment gas to the driven nozzle 81.
  • the temperature control gas supply unit 80 supplies the temperature control gas. I do.
  • the control unit 90 advances the driven nozzle 81 into the processing chamber 11 of the processing container 10 at the timing when the substrate holder 51 retreats from the processing container 10 .
  • the temperature of the processing chamber 11 is adjusted by jetting the temperature control gas into the processing chamber 11 .
  • the fluid discharge unit 40 discharges the gas remaining in the processing chamber 11 and the temperature control gas from the processing chamber 11 .
  • the substrate processing apparatus 1A can lower the temperature of the processing chamber 11 in a short period of time, and the temperature stabilization control can be shortened.
  • the substrate processing apparatus 1A is provided with a sensor (not shown) for detecting the position of the ejection port of the driven nozzle 81, and based on the detection result of the sensor, the extension length of the tip extending portion 81b (the position of the ejection port) is determined. may be varied. Accordingly, by inserting the driven nozzle 81 at an appropriate position (for example, the back side) of the processing chamber 11, it is possible to directly apply the temperature control gas to the portion to be cooled intensively. Uniformity of the in-plane temperature distribution can be further promoted.
  • the substrate processing apparatus 1 and the substrate processing method according to the embodiments disclosed this time are illustrative in all respects and are not restrictive. Embodiments are capable of variations and modifications in various forms without departing from the scope and spirit of the appended claims.
  • the items described in the above multiple embodiments can take other configurations within a consistent range, and can be combined within a consistent range.
  • substrate processing apparatus 10 processing container 30 fluid supply unit 60 heating mechanism 70 temperature measurement unit 90 control unit W substrate

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PCT/JP2023/002392 2022-02-08 2023-01-26 基板処理装置、および基板処理方法 Ceased WO2023153222A1 (ja)

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KR1020247028696A KR20240148851A (ko) 2022-02-08 2023-01-26 기판 처리 장치 및 기판 처리 방법
US18/835,377 US20250140585A1 (en) 2022-02-08 2023-01-26 Substrate processing apparatus and substrate processing method
CN202380019176.9A CN118633142A (zh) 2022-02-08 2023-01-26 基片处理装置和基片处理方法

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Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2011187570A (ja) * 2010-03-05 2011-09-22 Tokyo Electron Ltd 超臨界処理装置及び超臨界処理方法
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP2013026348A (ja) * 2011-07-19 2013-02-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置
US20130239996A1 (en) * 2010-06-25 2013-09-19 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and mems devices
US20200411344A1 (en) * 2019-06-27 2020-12-31 Semes Co., Ltd. Apparatus for treating substrate
JP2021086857A (ja) * 2019-11-25 2021-06-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187570A (ja) * 2010-03-05 2011-09-22 Tokyo Electron Ltd 超臨界処理装置及び超臨界処理方法
US20130239996A1 (en) * 2010-06-25 2013-09-19 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and mems devices
WO2012165377A1 (ja) * 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP2013026348A (ja) * 2011-07-19 2013-02-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置
US20200411344A1 (en) * 2019-06-27 2020-12-31 Semes Co., Ltd. Apparatus for treating substrate
JP2021086857A (ja) * 2019-11-25 2021-06-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法

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