JP7738685B2 - 基板処理装置、および基板処理方法 - Google Patents

基板処理装置、および基板処理方法

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Publication number
JP7738685B2
JP7738685B2 JP2023580165A JP2023580165A JP7738685B2 JP 7738685 B2 JP7738685 B2 JP 7738685B2 JP 2023580165 A JP2023580165 A JP 2023580165A JP 2023580165 A JP2023580165 A JP 2023580165A JP 7738685 B2 JP7738685 B2 JP 7738685B2
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JP
Japan
Prior art keywords
temperature
substrate
processing
period
processing vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023580165A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023153222A1 (https=
Inventor
祥吾 福井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2023153222A1 publication Critical patent/JPWO2023153222A1/ja
Application granted granted Critical
Publication of JP7738685B2 publication Critical patent/JP7738685B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/80—Cleaning only by supercritical fluids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
JP2023580165A 2022-02-08 2023-01-26 基板処理装置、および基板処理方法 Active JP7738685B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022018193 2022-02-08
JP2022018193 2022-02-08
PCT/JP2023/002392 WO2023153222A1 (ja) 2022-02-08 2023-01-26 基板処理装置、および基板処理方法

Publications (2)

Publication Number Publication Date
JPWO2023153222A1 JPWO2023153222A1 (https=) 2023-08-17
JP7738685B2 true JP7738685B2 (ja) 2025-09-12

Family

ID=87564119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023580165A Active JP7738685B2 (ja) 2022-02-08 2023-01-26 基板処理装置、および基板処理方法

Country Status (6)

Country Link
US (1) US20250140585A1 (https=)
JP (1) JP7738685B2 (https=)
KR (1) KR20240148851A (https=)
CN (1) CN118633142A (https=)
TW (1) TW202339058A (https=)
WO (1) WO2023153222A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187570A (ja) 2010-03-05 2011-09-22 Tokyo Electron Ltd 超臨界処理装置及び超臨界処理方法
WO2012165377A1 (ja) 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP2013026348A (ja) 2011-07-19 2013-02-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置
US20130239996A1 (en) 2010-06-25 2013-09-19 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and mems devices
US20200411344A1 (en) 2019-06-27 2020-12-31 Semes Co., Ltd. Apparatus for treating substrate
JP2021086857A (ja) 2019-11-25 2021-06-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187570A (ja) 2010-03-05 2011-09-22 Tokyo Electron Ltd 超臨界処理装置及び超臨界処理方法
US20130239996A1 (en) 2010-06-25 2013-09-19 Anastasios J. Tousimis Integrated processing and critical point drying systems for semiconductor and mems devices
WO2012165377A1 (ja) 2011-05-30 2012-12-06 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP2013026348A (ja) 2011-07-19 2013-02-04 Toshiba Corp 半導体基板の超臨界乾燥方法及び装置
US20200411344A1 (en) 2019-06-27 2020-12-31 Semes Co., Ltd. Apparatus for treating substrate
JP2021086857A (ja) 2019-11-25 2021-06-03 東京エレクトロン株式会社 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
US20250140585A1 (en) 2025-05-01
TW202339058A (zh) 2023-10-01
WO2023153222A1 (ja) 2023-08-17
CN118633142A (zh) 2024-09-10
KR20240148851A (ko) 2024-10-11
JPWO2023153222A1 (https=) 2023-08-17

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