TW202329262A - 一種基於模製成型制程的封裝基板及其製造方法 - Google Patents

一種基於模製成型制程的封裝基板及其製造方法 Download PDF

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Publication number
TW202329262A
TW202329262A TW111131629A TW111131629A TW202329262A TW 202329262 A TW202329262 A TW 202329262A TW 111131629 A TW111131629 A TW 111131629A TW 111131629 A TW111131629 A TW 111131629A TW 202329262 A TW202329262 A TW 202329262A
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Taiwan
Prior art keywords
layer
copper
circuit
photoresist
photoresist layer
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TW111131629A
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English (en)
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陳先明
馮磊
黃本霞
洪業杰
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大陸商珠海越亞半導體股份有限公司
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Publication of TW202329262A publication Critical patent/TW202329262A/zh

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Abstract

本申請公開了一種基於模製成型制程的封裝基板，包括封裝層、位於所述封裝層內的支撐框架、基座、位於所述基座上表面的器件、位於所述基座下表面的銅凸臺以及沿高度方向貫穿所述封裝層的導通銅柱層，在所述封裝層上下的第一線路層和第二線路層，所述第二線路層包括第二導通線路和散熱線路，所述第一線路層和所述第二導通線路通過所述導通銅柱層導通連接，所述散熱線路通過所述銅凸臺和所述基座與所述器件的一側連接，所述第一線路層與所述器件的另一側連接。還公開了一種基於模製成型制程的封裝基板的製造方法。

Description

一種基於模製成型制程的封裝基板及其製造方法
本發明涉及電子器件封裝結構，具體涉及一種基於模製成型制程的封裝基板及其製造方法。
隨著電子技術的發展與進步，電子產品朝著短小輕薄的方向演進，而電子產品的功能要求越來越強大，促進了電子產品的封裝結構朝著高度集成化、小型化的方向發展，晶片等元器件嵌埋封裝應運而生；與此同時電子元件的應用也朝著高頻高速的方向發展，導致單位面積的熱流密度迅速遞增。眾所周知，隨著周圍環境溫度的上升，電子元件的性能和可靠性相對降低。如果不能及時將產生的熱量散發，電子元器件持續升溫會導致產品性能下降，日而久之，電子產品的可靠性也會受影響。因此如何合理優化嵌埋封裝基板、封裝體的設計，提升嵌埋封裝結構的散熱性能，是當前一個重要的課題。
嵌入式封裝基板是指採用多步驟製造工藝將元器件嵌入到基板中。單晶片、多晶片或者無源元器件均可並排式嵌入到有機基質框架之中，晶片等元器件嵌入式封裝已經興起多年，目前仍是主流的嵌埋封裝方式。但隨著高頻高速產品的興起，嵌入式封裝產品有極高的低損耗和散熱需求，有機基質作為框架的嵌埋封裝方法的發展應用遇到了瓶頸，即使散熱性再好的有機基質材料，散熱特性都存在局限性，很難從根本上解決 高頻高速嵌埋產品的散熱問題。
現有技術中，傳統的嵌埋封裝方法是將晶片等元器件貼裝於預設空腔的聚合物框架或者Core材，再使用塑封材料封裝。如同專利號CN105679682A公開的預置空腔的有機基質框架，在預置空腔中貼上主被動元件後，通過壓合介質材料來實現封裝，如專利號CN104332414A公開的封裝方法，該方法存在如下缺點：隨著高頻高速高功率產品的興起，嵌入式封裝產品有極高的散熱需求，即使散熱性再好的有機基質材料，散熱特性都存在局限性，無法從根本上解決高頻高速高功率嵌埋產品的散熱問題。
為了提升嵌埋封裝結構的散熱性能，最近使用金屬框架來嵌埋元器件的方案備受關注，在金屬(例如銅)板上預先加工空腔，將晶片等元器件貼裝於預置空腔，再通過壓合介質材料進行封裝，此封裝方案利用金屬材料優越的散熱性能，輔助晶片進行散熱，可以一定程度解決高功率晶片的散熱問題。但使用金屬框架來嵌埋元器件，面臨著頂面和底面的線路之間的導通問題。目前傳統的方法是在加工金屬框架時，預留通孔位置，封裝晶片等元器件時，預留通孔位置填充介質材料，然後在預留通孔位置再鑽通孔，金屬化後實現頂面和底面的線路之間的導通。對於嵌埋所需金屬框架厚度較厚的應用(例如200um以上)，受限於鑽孔的加工能力，封裝後鑽孔孔徑通常在200um以上，對於此類較大孔徑的通孔，受限於當前電鍍能力，電鍍後通常為空心的導通通孔，無法形成實心的導通柱，嵌埋封裝基板的電性能及散熱性能受到影響。
本發明的實施方案涉及提供一種基於模製成型制程的封裝 基板及其製造方法，以解決上述技術問題。本發明將模製成型的方法應用於嵌埋封裝基板，將具有實心導通銅柱層的臨時承載板和基座上已貼裝好器件的第一基板裝配固定於模具，然後使用封裝材料進行塑封形成封裝層，利用實心導通銅柱層連接封裝層的上下表面的線路。本發明的技術方案可以實現將器件嵌埋封裝在第一基板中，縮小封裝體積，符合封裝體小型化的發展需求；利用第一基板以及外層製作的散熱線路與器件背面連接，利用金屬材料優越的散熱性能，提升封裝結構的散熱性能，以滿足高頻高速高功率產品高散熱的發展需求；在臨時承載板上預先設置實心導通銅柱層，用於導通封裝層上下表面的線路，解決了傳統金屬框架嵌埋封裝方法中，導通孔難以加工成實心導通柱的問題；同時利用實心導通銅柱層良好的導電性能，降低封裝體的寄生電容、電感、損耗，提升封裝體的電性能。
本發明第一方面涉及一種基於模製成型制程的封裝基板的製造方法，包括如下步驟：
(a)準備臨時承載板，並在所述臨時承載板的至少一側上製作導通銅柱層；
(b)製造第一基板，所述第一基板包括支撐框架和基座以及在所述基座上的銅凸臺，所述支撐框架和所述基座之間形成貫穿通孔；
(c)在所述基座上貼裝器件；
(d)將所述臨時承載板和所述第一基板同時裝配固定於模具中，所述導通銅柱層位於所述貫穿通孔內，所述導通銅柱層的下端面與所述銅凸臺的端面平齊或高出所述銅凸臺的端面，施加封裝層以塑封所述 第一基板、所述器件以及所述導通銅柱層；
(e)拆除所述模具；
(f)移除所述臨時承載板；
(g)減薄所述封裝層以暴露所述導通銅柱層的端部和所述銅凸臺的端面；
(h)形成器件端子開窗以暴露所述器件的端子；
(i)在所述封裝層的上下表面上分別形成第一線路層和第二線路層，所述第二線路層包括第二導通線路和散熱線路，所述第一線路層和所述第二導通線路通過所述導通銅柱層導通連接，所述散熱線路通過所述銅凸臺和所述基座與所述器件的無效表面連接，所述第一線路層和所述器件的端子連接。
在一些實施方案中，所述臨時承載板包括至少一面覆有雙層銅箔的覆銅板，其中所述覆銅板包括核心層、在所述核心層表面上的第一銅層和在所述第一銅層上的第二銅層，其中所述第一銅層和所述第二銅層通過物理壓合附著在一起。
優選地，所述核心層包括半固化片，所述第一銅層的厚度為18μm，所述第二銅層的厚度為3μm。
在一些實施方案中，步驟(a)包括：
(a1)在所述臨時承載板的至少一側上形成第一金屬種子層；
(a2)在所述第一金屬種子層上施加第一光阻層，曝光顯影形成第一特徵圖案；
(a3)在所述第一特徵圖案中電鍍形成導通銅柱層；
(a4)移除所述第一光阻層。
優選地，通過化學鍍或者濺射的方式形成所述第一金屬種子層。
優選地，所述第一金屬種子層包括鈦、銅、鈦鎢合金或它們的組合。
在一些實施方案中，步驟(a)還包括：
(a0)在所述臨時承載板的至少一側上施加蝕刻阻擋層。
在一些實施方案中，所述蝕刻阻擋層包括鎳、鈦或它們的組合。
在一些實施方案中，步驟(b)包括：
(b1)準備銅板；
(b2)在所述銅板的上下表面分別施加第二光阻層和第三光阻層，曝光顯影所述第二光阻層形成第二特徵圖案，整板曝光所述第三光阻層；
(b3)在所述第二特徵圖案中減銅蝕刻形成所述基座的頂面，移除所述第二光阻層和所述第三光阻層；
(b4)在所述銅板的上下表面分別施加第四光阻層和第五光阻層，整板曝光所述第四光阻層，曝光顯影所述五光阻層形成第五特徵圖案；
(b5)在所述第五特徵圖案中減銅蝕刻形成所述銅凸臺，移除所述第四光阻層和第五光阻層；
(b6)在所述基座的兩側鑽銑加工形成貫穿通孔和支撐框架。
在一些實施方案中，步驟(b)包括：
(b1/)準備銅板；
(b2/)在所述銅板的上下表面分別施加第二光阻層和第三光阻層，曝光顯影所述第二光阻層形成第二特徵圖案，整板曝光所述第三光阻層；
(b3/)在所述第二特徵圖案中減銅蝕刻形成所述基座的頂面，移除所述第二光阻層和所述第三光阻層；
(b4/)在所述銅板的上下表面分別施加第四光阻層和第五光阻層，整板曝光所述第四光阻層，曝光顯影所述五光阻層形成第五特徵圖案；
(b5/)在所述第五特徵圖案中減銅蝕刻形成所述銅凸臺，所述銅凸臺位於所述基座的下表面上，移除所述第四光阻層和第五光阻層；
(b6/)在所述基座的兩側分別施加第八光阻層和第九光阻層，分別曝光顯影形成第八特徵圖案和第九特徵圖案，在所述第八特徵圖案和第九特徵圖案中蝕刻暴露的銅板形成貫穿通孔和支撐框架，得第一基板。
在一些實施方案中，步驟(c)包括在所述基座上施加粘性導熱材料，將所述器件的背面貼裝於所述粘性導熱材料上，以在所述基座上貼裝器件。
在一些實施方案中，所述粘性導熱材料選自導熱膠、銀漿中 的至少其一。
在一些實施方案中，所述封裝層選自環氧樹脂、酚醛樹脂、苯並環丁烯樹脂、聚酯亞胺樹脂中的至少其一。
在一些實施方案中，步驟(f)包括通過將所述第一銅層和所述第二銅層物理分離，並蝕刻所述第二銅層，以移除所述臨時承載板。
在一些實施方案中，步驟(f)還包括蝕刻所述蝕刻阻擋層和所述第一金屬種子層。
在一些實施方案中，步驟(g)包括通過磨板或等離子蝕刻的方式整體減薄所述封裝層以暴露所述導通銅柱層的端部和所述銅凸臺的端面。
在一些實施方案中，步驟(g)包括通過鐳射或鑽孔的方式局部減薄所述封裝層以暴露所述導通銅柱層的端部和所述銅凸臺的端面。
在一些實施方案中，步驟(h)包括通過鐳射、鑽孔或等離子蝕刻的方式局部減薄所述器件的端子上方的封裝層，以形成器件端子開窗暴露所述器件的端子。
在一些實施方案中，步驟(i)包括：
(i1)在所述封裝層的上下表面上分別形成第二金屬種子層和第三金屬種子層；
(i2)在所述第二金屬種子層和所述第三金屬種子層上分別施加第六光阻層和第七光阻層，曝光顯影形成第六特徵圖案和第七特徵圖案；
(i3)在所述第六特徵圖案和所述第七特徵圖案中分別電鍍 形成第一線路層和第二線路層；
(i4)移除所述第六光阻層和所述第七光阻層，並蝕刻暴露的所述第二金屬種子層和所述第三金屬種子層。
優選地，通過化學鍍或者濺射的方式形成所述第二金屬種子層和所述第三金屬種子層。
優選地，所述第二金屬種子層和所述第三金屬種子層分別包括鈦、銅、鈦鎢合金或它們的組合。
在一些實施方案中，還包括：
(j)在步驟i之後，分別在所述第一線路層和所述第二線路層上施加阻焊材料，並對暴露的金屬進行表面處理形成金屬表面處理層。
優選地，通過塗布、貼膜或印刷的方式分別在所述第一線路層和所述第二線路層上施加阻焊材料；通過化金、化銀、鍍金或鍍銀的方式對暴露的金屬進行表面處理形成金屬表面處理層。
本發明的第二方面提供一種基於模製成型制程的封裝基板，包括封裝層、位於所述封裝層內的支撐框架、基座、位於所述基座上表面的器件、位於所述基座下表面的銅凸臺以及沿高度方向貫穿所述封裝層的導通銅柱層，在所述封裝層上下的第一線路層和第二線路層，所述第二線路層包括第二導通線路和散熱線路，所述第一線路層和所述第二導通線路通過所述導通銅柱層導通連接，所述散熱線路通過所述銅凸臺和所述基座與所述器件連接，所述第一線路層與所述器件的端子連接。
在一些實施方案中，所述導通銅柱層的下端面與所述銅凸臺的端面平齊或或高出所述銅凸臺的端面。
在一些實施方案中，所述導通銅柱層的端部與所述封裝層平齊或高出所述封裝層；所述導通銅柱層包括至少一個導通銅柱。
在一些實施方式中，所述散熱線路通過所述銅凸臺和所述基座與所述器件的背面連接，所述第一線路層與所述器件的端子連接。
在一些實施方案中，還包括分別在所述第一線路層上和所述第二線路層上形成的第一阻焊層和第二阻焊層，所述第一阻焊層內設置有第一金屬表面處理層，所述第二阻焊層內設置有第二金屬表面處理層。
100:封裝基板
1101a:核心層
1101b:第一銅層
1101c:第二銅層
1012:蝕刻阻擋層
1013:第一金屬種子層
1014:第一光阻層
1015:導通銅柱開窗
1016:導通銅柱層
2011:銅板
2012:第二光阻層
2013:第三光阻層
2014:基座
2014a:頂面
2015:第四光阻層
2016:第五光阻層
2017:銅凸臺
2018:貫穿通孔
2019:支撐框架
301:封裝層
3011:粘性導熱材料
3012:器件
3013:器件端子開窗
3014:第二金屬種子層
3015:第三金屬種子層
3016:第一線路層
3017:第二導通線路
3018:散熱線路
401:模具
402:第一阻焊層
4021:第一金屬表面處理層
403:第二阻焊層
4031:第二金屬表面處理層
為了更好地理解本發明並示出本發明的實施方式，以下純粹以舉例的方式參照附圖。
具體參照附圖時，必須強調的是特定的圖示是示例性的並且目的僅在於說明性地討論本發明的優選實施方案，並且基於提供被認為是對於本發明的原理和概念方面的描述最有用和最易於理解的圖示的原因而被呈現。就此而言，沒有試圖將本發明的結構細節以超出對本發明基本理解所必須的詳細程度來圖示；參照附圖的說明使本領域技術人員認識到本發明的幾種形式可如何實際體現出來。在附圖中：
圖1為根據本發明的一個實施方案的基於模製成型制程的封裝基板的截面示意圖；
圖2(a)~2(o)示出本發明一個實施方案的基於模製成型制程的封裝基板的製造方法的各步驟中間結構的截面示意圖。
參照圖1，示出基於模製成型制程的封裝基板100的截面示意 圖。如圖1所示，封裝基板100包括封裝層301，封裝層301可以選自環氧樹脂、酚醛樹脂、苯並環丁烯樹脂、聚酯亞胺樹脂中的至少其一。
封裝層301內設置有支撐框架2019、基座2014、位於基座2014上表面的器件3012、位於基座2014下表面的銅凸臺2017以及沿高度方向貫穿封裝層301的導通銅柱層1016。導通銅柱層1016可以包括至少一個導通銅柱作為IO通道，其截面尺寸可以相同，也可以不同；導通銅柱層1016的形狀可以根據實際需要設定，例如，可以為方形、圓形等，具體不做限定。導通銅柱層1016的下端面可以與銅凸臺2017的端面平齊，導通銅柱層1016的下端面也可以高出銅凸臺2017的端面；導通銅柱層1016的端部可以與封裝層301平齊，也可以高出封裝層301，具體不做限定。
封裝層301的上下表面上分別設置有第一線路層3016和第二線路層，第二線路層包括第二導通線路3017和散熱線路3018，第一線路層3016和第二導通線路3017通過導通銅柱層1016導通連接；散熱線路3018通過銅凸臺2017和基座2014與器件3012的背面連接，可用於輔助散熱；第一線路層3016與器件3012的端子連接。
封裝基板100還包括分別在第一線路層3016上和第二線路層上形成的第一阻焊層402和第二阻焊層403，第一阻焊層402內設置有第一金屬表面處理層4021，第二阻焊層403內設置有第二金屬表面處理層4031。
參照圖2(a)~2(o)，示出本發明一個實施方案的基於模製成型制程的封裝基板的製造方法的各個步驟的中間結構的截面示意圖。
所述製造方法包括如下步驟：準備臨時承載板，並在臨時承載板的至少一側上施加蝕刻阻擋層1012-步驟(a)，如圖2(a)所示。臨時 承載板包括核心層1011a，核心層可以是半固化片，核心層1011a往外依次是位於核心層1011a表面的第一銅層1011b及位於第一銅層1011b表面的第二銅層1011c；第一銅層1011b和第二銅層1011c為銅箔物理壓合而成，第一銅層1011b和第二銅層1011c可以物理分離，便於後續工序移除臨時承載板；第一銅層1011b和第二銅層1011c的厚度可以根據實際需要調節，優選地，第一銅層1011b的厚度為18μm、第二銅層1011c的厚度為3μm。通常，可以在臨時承載板的兩側同時施加蝕刻阻擋層1012，本實施方案中後續，對臨時承載板一側的單個單元進行演示，但是並不限定只能在臨時承載板的單側進行後續操作。在後續移除臨時承載板的工序中，分板後蝕刻第一銅層1011b時，蝕刻阻擋層1012可以保護基板的線路層和銅柱層，避免過度蝕刻。蝕刻阻擋層1012可以包括鎳、鈦或它們的組合；蝕刻阻擋層1012的厚度可以根據實際需要調節，優選地，蝕刻阻擋層1012的厚度為3~10μm。
接著，在蝕刻阻擋層1012上形成第一金屬種子層1013，在第一金屬種子層1013上施加第一光阻層1014，曝光顯影形成第一特徵圖案-步驟(b)，如圖2(b)所示。通常，可以通過化學鍍或者濺射的方式在蝕刻阻擋層1012上形成第一金屬種子層1013，第一金屬種子層1013可以包括鈦、銅、鈦鎢合金或它們的組合，第一金屬種子層1013的厚度範圍為1-3μm；優選地，濺射鈦和銅製作第一金屬種子層1013。通常，可以通過貼膜或塗覆的方式在第一金屬種子層1013上施加第一光阻層1014；第一光阻層1014的厚度可以根據需要調節。第一特徵圖案中具有導通銅柱開窗1015，用於後續工序中電鍍形成導通銅柱層。
然後，在第一特徵圖案中電鍍形成導通銅柱層1016，移除第 一光阻層1014-步驟(c)，如圖2(c)所示。通常，可以通過退膜的方式移除第一光阻層1014。在導通銅柱開窗1015中電鍍銅形成導通銅柱層1016，導通銅柱層1016的厚度可以根據實際需求設置，通常導通銅柱層1016的厚度不高於第一光阻層1014的厚度；導通銅柱層1016形成後可以對導通銅柱層1016表面進行棕化處理，以後後續工序中增加導通銅柱層1016與其外包覆的封裝層的結合力；導通銅柱層1016可以包括至少一個導通銅柱，導通銅柱層1016可以包括尺寸不同的導通銅柱；導通銅柱層1016的形狀可以根據實際需要設定，例如，可以為方形、圓形等，具體不做限定；優選地，導通銅柱層1016上下尺寸均勻，對於嵌埋封裝結構的散熱以及信號傳輸穩定更具優勢。
在臨時承載板上預先設置實心的導通銅柱層，用於導通封裝層上下表面的線路，解決了傳統金屬框架嵌埋封裝方法中，導通孔難以加工成實心導通柱的問題；同時利用實心導通銅柱層良好的導電性能，降低封裝體的寄生電容、電感、損耗，提升封裝體的電性能。
接著，準備銅板2011，在銅板2011的上下表面分別施加第二光阻層2012和第三光阻層2013，曝光顯影第二光阻層2012形成第二特徵圖案，整板曝光第三光阻層2013-步驟(d)，如圖2(d)所示。通常，可以通過塗布或貼膜的方式施加第二光阻層2012和第三光阻層2013。第二特徵圖案中可以露出基座區域；整板曝光第三光阻層2013可以整面遮蔽銅板2011的下表面，在後續減銅蝕刻工序中可以保護銅板2011的下表面，避免過度蝕刻。
然後，在第二特徵圖案中減銅蝕刻形成基座2014的頂面2014a，移除第二光阻層2012和第三光阻層2013-步驟(e)，如圖2(e)所示。通常，在第二特徵圖案露出的區域進行減銅蝕刻可以得到基座2014的頂面 2014a，並且可以根據基座與支撐框架的的高度差設置減銅蝕刻量。可以通過退膜的方式移除第二光阻層2012和第三光阻層2013。
接著，在銅板2011的上下表面分別施加第四光阻層2015和第五光阻層2016，整板曝光第四光阻層2015，曝光顯影第五光阻層2016形成第五特徵圖案-步驟(f)，如圖2(f)所示。通常，可以通過塗布或貼膜的方式施加第四光阻層2015和第五光阻層2016；整板曝光第四光阻層2015可以整面遮蔽銅板2011的上表面，在後續減銅蝕刻工序中可以保護銅板2011的上表面，避免過度蝕刻；第五特徵圖案可以遮蔽銅凸臺區域。
然後，在第五特徵圖案中減銅蝕刻形成銅凸臺2017，銅凸臺2017位於基座2014的下表面上，移除第四光阻層2015和第五光阻層2016，在基座2014的兩側鑽銑加工形成貫穿通孔2018和支撐框架2019，得第一基板-步驟(g)，如圖2(g)所示。通常，在第五特徵圖案中露出的區域進行減銅蝕刻可以得到銅凸臺2017，並且可以根據銅凸臺2017的高度，設定減銅蝕刻量；可以通過退膜的方式移除第四光阻層2015和第五光阻層2016。
需要說明的是，在減銅蝕刻形成銅凸臺2017，並移除第四光阻層2015和第五光阻層2016後，還可以再次在基座2014的雙面分別再次施加第八光阻層和第九光阻層，並分別製作特徵圖案，在特徵圖案中蝕刻暴露的銅板2011形成貫穿通孔2018和支撐框架2019。
接著，在基座2014上施加粘性導熱材料3011，將器件3012的背面貼裝於粘性導熱材料3011上，以在基座2014上貼裝器件3012-步驟(h)，如圖2(h)所示。通常，粘性導熱材料3011可以選自導熱膠、銀漿中的至少其一；可以通過塗覆、印刷或點膠的方式施加粘性導熱材料3011。器 件3012可以是裸晶片，如積體電路的驅動晶片(IC driver)、場效應管(FET)等、也可以是無源器件，如電容、電阻或電感等，還可以是經初步封裝後的單封裝體，例如球柵陣列(BGA)/柵格陣列(LGA)等，或者是其中多種器件的組合；器件3012可以是單面具有端子的器件，也可以是兩面上均具有端子的器件；例如，本實施方案中後續，僅對器件3012為具有單面端子的晶片進行演示，但是並不限定只能對具有單面端子的晶片進行後續操作。
通常，可以將器件3012的背面貼裝於粘性導熱材料3011上方，通過粘性導熱材料3011將器件3012的背面固定於基座2014的背面，器件3012正面朝上；可以根據實際需求設置多個器件，同時設置相同數量的基座用於貼裝多個器件。將器件3012嵌埋封裝在第一基板中，縮小封裝體積，符合封裝體小型化的發展需求。
然後，將臨時承載板和第一基板同時裝配固定於模具401中，導通銅柱層1016位於貫穿通孔2018內，導通銅柱層1016的下端面與銅凸臺2017的端面平齊，施加封裝層301以塑封第一基板、器件3012以及導通銅柱層1016-步驟(i)，如圖2(i)所示。通常，封裝層301可以選自環氧樹脂、酚醛樹脂、苯並環丁烯樹脂、聚酯亞胺樹脂中的至少其一。
需要說明的是，導通銅柱層1016的下端面還可以高出銅凸臺2017的端面，銅凸臺2017的端面與蝕刻阻擋層1012之間可以存在空隙，在後續封裝過程中，封裝層301可以填充該空隙。
接著，拆除模具401，分離第一銅層1011b和第二銅層1011c，蝕刻第二銅層1011c、蝕刻阻擋層1012和第一金屬種子層1013-步驟(j)，如圖2(j)所示。通常，在封裝層301塑封固化後，可以將模具401拆除。可以 通過特定藥水蝕刻掉蝕刻阻擋層，例如，採用蝕刻鎳藥水蝕刻掉蝕刻阻擋層。
然後，減薄封裝層301以暴露導通銅柱層1016的端部和銅凸臺2017的端面-步驟(k)，如圖2(k)所示。通常，可以通過磨板或等離子蝕刻的方式整體減薄封裝層301以暴露導通銅柱層1016的端部；還可以通過鐳射或鑽孔的方式局部減薄封裝層301以暴露導通銅柱層1016的端部；優選地，通過磨板或等離子蝕刻的方式整體減薄封裝層301。
接著，局部減薄器件3012的端子上方的封裝層301，以形成器件端子開窗3013暴露器件3012的端子-步驟(1)，如圖2(1)所示。通常，可以通過鐳射、鑽孔或等離子蝕刻的方式局部減薄器件3012的端子上方的封裝層301，以形成器件端子開窗3013暴露器件3012的端子。
然後，在封裝層301的上下表面上分別形成第二金屬種子層3014和第三金屬種子層3015-步驟(m)，如圖2(m)所示。通常，可以通過化學鍍或者濺射的方式在封裝層301的上下表面上分別形成第二金屬種子層3014和第三金屬種子層3015，第二金屬種子層3014和第三金屬種子層3015可以分別包括鈦、銅、鈦鎢合金或它們的組合；優選地，濺射鈦和銅分別製作第二金屬種子層3014和第三金屬種子層3015。
接著，在第二金屬種子層3014和第三金屬種子層3015上分別施加第六光阻層和第七光阻層，曝光顯影形成第六特徵圖案和第七特徵圖案，在第六特徵圖案和第七特徵圖案中分別電鍍形成第一線路層3016和第二線路層，移除第六光阻層和第七光阻層，並蝕刻暴露的第二金屬種子層3014和第三金屬種子層3015-步驟(n)，如圖2(n)所示。通常，第一線路層3016 和器件3012的端子連接；第二線路層包括第二導通線路3017和散熱線路3018，第一線路層3016和第二導通線路3017通過導通銅柱層1016導通連接，散熱線路3018通過銅凸臺2017和基座2014與器件3012的背面連接，以輔助散熱。可以根據實際需求設置第一線路層和第二線路層的厚度，通常第一線路層的厚度低於第六光阻層的厚度，第二線路層的厚度低於第七光阻層的厚度。可以通過塗布或貼膜的方式施加第六光阻層和第七光阻層，可以通過退膜的方式移除第六光阻層和第七光阻層。
利用第一基板以及外層製作的散熱線路3018與器件3012的背面連接，利用金屬材料優越的散熱性能，提升封裝結構的散熱性能，以滿足高頻高速高功率產品高散熱的發展需求。
本實施方案僅以雙面板為例進行演示，在實際應用中可以根據實際產品需求，繼續增層，形成多層封裝基板。
最後，分別在第一線路層3016和第二線路層上施加阻焊材料形成第一阻焊層402和第二阻焊層403，並對第一阻焊層402內暴露的金屬進行表面處理形成第一金屬表面處理層4021，對第二阻焊層403內暴露的金屬進行表面處理形成第二金屬表面處理層4031，得到封裝基板100-步驟(o)，如圖2(o)所示。通常，可以通過塗布、貼膜或印刷的方式施加阻焊材料，曝光顯影形成阻焊層；可以通過化金、化銀、鍍金或鍍錫的方式對暴露的金屬進行表面處理。
本領域技術人員將會認識到，本發明不限於上下文中具體圖示和描述的內容。而且，本發明的範圍由所附請求項限定，包括上文所述的各個技術特徵的組合和子組合以及其變化和改進，本領域技術人員在閱 讀前述說明後將會預見到這樣的組合、變化和改進。
在請求項書中，術語“包括”及其變體例如“包含”、“含有”等是指所列舉的組件被包括在內，但一般不排除其他組件。
2014:基座
2017:銅凸臺
2019:支撐框架
3012:器件
3016:第一線路層
3017:第二導通線路
3018:散熱線路
402:第一阻焊層
4021:第一金屬表面處理層
403:第二阻焊層
4031:第二金屬表面處理層

Claims (21)

  1. 一種基於模製成型制程的封裝基板的製造方法，包括如下步驟：
    (a)準備臨時承載板，並在所述臨時承載板的至少一側上製作導通銅柱層；
    (b)製造第一基板，所述第一基板包括支撐框架和基座以及在所述基座上的銅凸臺，所述支撐框架和所述基座之間形成貫穿通孔；
    (c)在所述基座上貼裝器件；
    (d)將所述臨時承載板和所述第一基板同時裝配固定於模具中，所述導通銅柱層位於所述貫穿通孔內，所述導通銅柱層的下端面與所述銅凸臺的端面平齊或高出所述銅凸臺的端面，施加封裝層以塑封所述第一基板、所述器件以及所述導通銅柱層；
    (e)拆除所述模具；
    (f)移除所述臨時承載板；
    (g)減薄所述封裝層以暴露所述導通銅柱層的端部和所述銅凸臺的端面；
    (h)形成器件端子開窗以暴露所述器件的端子；
    (i)在所述封裝層的上下表面上分別形成第一線路層和第二線路層，所述第二線路層包括第二導通線路和散熱線路，所述第一線路層和所述第二導通線路通過所述導通銅柱層導通連接，所述散熱線路通過所述銅凸臺和所述基座與所述器件的無效表面連接，所述第一線路層和所述器件的端子連接。
  2. 根據請求項1所述的製造方法，其中所述臨時承載板包括至少一面覆有雙層銅箔的覆銅板，其中所述覆銅板包括核心層、在所述核心層表面上的第一銅層和在所述第一銅層上的第二銅層，其中所述第一銅層和所述第二銅層通過物理壓合附著在一起。
  3. 根據請求項1所述的製造方法，其中步驟(a)包括：
    (a1)在所述臨時承載板的至少一側上形成第一金屬種子層；
    (a2)在所述第一金屬種子層上施加第一光阻層，曝光顯影形成第一特徵圖案；
    (a3)在所述第一特徵圖案中電鍍形成導通銅柱層；
    (a4)移除所述第一光阻層。
  4. 根據請求項3所述的製造方法，其中步驟(a)還包括：
    (a0)在所述臨時承載板的至少一側上施加蝕刻阻擋層。
  5. 根據請求項4所述的製造方法，其中所述蝕刻阻擋層包括鎳、鈦或它們的組合。
  6. 根據請求項1所述的製造方法，其中步驟(b)包括：
    (b1)準備銅板；
    (b2)在所述銅板的上下表面分別施加第二光阻層和第三光阻層，曝光顯影所述第二光阻層形成第二特徵圖案，整板曝光所述第三光阻層；
    (b3)在所述第二特徵圖案中減銅蝕刻形成所述基座的頂面，移除所述第二光阻層和所述第三光阻層；
    (b4)在所述銅板的上下表面分別施加第四光阻層和第五光阻層，整板曝光所述第四光阻層，曝光顯影所述五光阻層形成第五特徵圖案；
    (b5)在所述第五特徵圖案中減銅蝕刻形成所述銅凸臺，所述銅凸臺位於所述基座的下表面上，移除所述第四光阻層和第五光阻層；
    (b6)在所述基座的兩側鑽銑加工形成貫穿通孔和支撐框架，得第一基板。
  7. 根據請求項1所述的製造方法，其中步驟(b)包括：
    (b1/)準備銅板；
    (b2/)在所述銅板的上下表面分別施加第二光阻層和第三光阻層，曝光顯 影所述第二光阻層形成第二特徵圖案，整板曝光所述第三光阻層；
    (b3/)在所述第二特徵圖案中減銅蝕刻形成所述基座的頂面，移除所述第二光阻層和所述第三光阻層；
    (b4/)在所述銅板的上下表面分別施加第四光阻層和第五光阻層，整板曝光所述第四光阻層，曝光顯影所述五光阻層形成第五特徵圖案；
    (b5/)在所述第五特徵圖案中減銅蝕刻形成所述銅凸臺，所述銅凸臺位於所述基座的下表面上，移除所述第四光阻層和第五光阻層；
    (b6/)在所述基座的兩側分別施加第八光阻層和第九光阻層，分別曝光顯影形成第八特徵圖案和第九特徵圖案，在所述第八特徵圖案和第九特徵圖案中蝕刻暴露的銅板形成貫穿通孔和支撐框架，得第一基板。
  8. 根據請求項1所述的製造方法，其中步驟(c)包括在所述基座上施加粘性導熱材料，將所述器件的背面貼裝於所述粘性導熱材料上，以在所述基座上貼裝器件。
  9. 根據請求項8所述的製造方法，其中所述粘性導熱材料選自導熱膠、銀漿中的至少其一。
  10. 根據請求項1所述的製造方法，其中所述封裝層選自環氧樹脂、酚醛樹脂、苯並環丁烯樹脂、聚酯亞胺樹脂中的至少其一。
  11. 根據請求項2所述的製造方法，其中步驟(f)包括通過將所述第一銅層和所述第二銅層物理分離，並蝕刻所述第二銅層，以移除所述臨時承載板。
  12. 根據請求項1所述的製造方法，其中步驟(g)包括通過磨板或等離子蝕刻的方式整體減薄所述封裝層以暴露所述導通銅柱層的端部和所述銅凸臺的端面。
  13. 根據請求項1所述的製造方法，其中步驟(g)包括通過鐳射或鑽孔的方式局部減薄所述封裝層以暴露所述導通銅柱層的端部和所述銅凸臺的端面。
  14. 根據請求項1所述的製造方法，其中步驟(h)包括通過鐳射、鑽孔或等離子蝕刻的方式局部減薄所述器件的端子上方的封裝層，以形成器件端子開窗暴露所述器件的端子。
  15. 根據請求項1所述的製造方法，其中步驟(i)包括：
    (i1)在所述封裝層的上下表面上分別形成第二金屬種子層和第三金屬種子層；
    (i2)在所述第二金屬種子層和所述第三金屬種子層上分別施加第六光阻層和第七光阻層，曝光顯影形成第六特徵圖案和第七特徵圖案；
    (i3)在所述第六特徵圖案和所述第七特徵圖案中分別電鍍形成第一線路層和第二線路層；
    (i4)移除所述第六光阻層和所述第七光阻層，並蝕刻暴露的所述第二金屬種子層和所述第三金屬種子層。
  16. 根據請求項1所述的製造方法，還包括：
    (j)在步驟i之後，分別在所述第一線路層和所述第二線路層上施加阻焊材料，並對暴露的金屬進行表面處理形成金屬表面處理層。
  17. 一種基於模製成型制程的封裝基板，包括封裝層、位於所述封裝層內的支撐框架、基座、位於所述基座上表面的器件、位於所述基座下表面的銅凸臺以及沿高度方向貫穿所述封裝層的導通銅柱層，在所述封裝層上下的第一線路層和第二線路層，所述第二線路層包括第二導通線路和散熱線路，所述第一線路層和所述第二導通線路通過所述導通銅柱層 導通連接，所述散熱線路通過所述銅凸臺和所述基座與所述器件的一側連接，所述第一線路層與所述器件的另一側連接。
  18. 根據請求項17所述的基於模製成型制程的封裝基板，其中所述導通銅柱層的下端面與所述銅凸臺的端面平齊或高出所述銅凸臺的端面。
  19. 根據請求項17所述的基於模製成型制程的封裝基板，其中所述導通銅柱層的端部與所述封裝層平齊或高出所述封裝層；所述導通銅柱層包括至少一個導通銅柱。
  20. 根據請求項17所述的基於模製成型制程的封裝基板，其中所述散熱線路通過所述銅凸臺和所述基座與所述器件的背面連接，所述第一線路層與所述器件的端子連接。
  21. 根據請求項17所述的基於模製成型制程的封裝基板，還包括分別在所述第一線路層上和所述第二線路層上形成的第一阻焊層和第二阻焊層，所述第一阻焊層內設置有第一金屬表面處理層，所述第二阻焊層內設置有第二金屬表面處理層。
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