TW202322247A - 膠帶壓接裝置 - Google Patents

膠帶壓接裝置 Download PDF

Info

Publication number
TW202322247A
TW202322247A TW111141100A TW111141100A TW202322247A TW 202322247 A TW202322247 A TW 202322247A TW 111141100 A TW111141100 A TW 111141100A TW 111141100 A TW111141100 A TW 111141100A TW 202322247 A TW202322247 A TW 202322247A
Authority
TW
Taiwan
Prior art keywords
wafer
tape
upper chamber
lower chamber
chamber
Prior art date
Application number
TW111141100A
Other languages
English (en)
Inventor
内保貴
齋藤良信
柿沼良典
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202322247A publication Critical patent/TW202322247A/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

[課題]提供一種膠帶壓接裝置，即使以按壓滾輪將附膠帶之環狀框架的膠帶壓接於晶圓的背面，也不會有讓晶圓破損之情形。 [解決手段]膠帶壓接裝置包含：上部腔室；下部腔室；升降機構，切換封閉狀態與開放狀態，前述封閉狀態是使上部腔室下降而接觸於下部腔室的狀態，前述開放狀態是使上部腔室從下部腔室離開的狀態；真空部，在封閉狀態下將上部腔室及下部腔室形成為真空；及大氣開放部，將上部腔室及下部腔室對大氣開放。在下部腔室容置有晶圓工作台，前述晶圓工作台具有保持面，前述保持面僅支撐晶圓的外周剩餘區域且包含將器件區域設為非接觸的圓形凹部。膠帶壓接裝置包含：正壓生成部，將空氣供給至晶圓工作台的圓形凹部，形成比上部腔室及下部腔室的氣壓更高的正壓。

Description

膠帶壓接裝置
本發明是有關於一種膠帶壓接裝置，將已壓接於在中央具備有容置晶圓的開口部之環狀框架上的膠帶壓接於晶圓的背面。
在正面形成有已將IC、LSI等之複數個器件藉由交叉之複數條切割道來區劃之器件區域與圍繞器件區域之外周剩餘區域的晶圓，可在背面被磨削而形成為所期望的厚度之後，藉由切割裝置、雷射加工裝置來分割成一個個的器件晶片，並可將所分割出的各個器件晶片利用於行動電話、個人電腦等之電氣機器上。
本發明之申請人已提出有以下技術之方案：為了容易地進行已磨削之晶圓的搬送，會在使環狀的補強部殘存於和外周剩餘區域對應之背面且施行預定之加工後，將切割膠帶壓接於晶圓的背面並且以環狀框架支撐晶圓，來從晶圓去除環狀的補強部(參照例如專利文獻1)。
但是，在專利文獻1所揭示之技術中，將切割膠帶壓接於在外周形成有環狀的補強部之晶圓的背面來和環狀框架形成為一體之作業有困難，並且將環狀的補強部切斷來從晶圓去除之作法也有困難，而有著生產性差的問題。
為了解決此問題，可考慮以下作法：在將切割膠帶貼附於晶圓的背面來和環狀框架形成為一體之作業中，利用支撐晶圓的正面側之晶圓工作台。為了不讓形成於晶圓的正面之器件區域損傷，晶圓工作台宜僅支撐外周剩餘區域且形成有將器件區域設為非接觸的圓形凹部。 先前技術文獻 專利文獻
專利文獻1：日本專利特開2010-62375號公報
發明欲解決之課題 但是，在以具有圓形凹部的晶圓工作台僅支撐晶圓的正面側的外周剩餘區域，並以按壓滾輪將附膠帶之環狀框架的膠帶壓接於晶圓的背面之構成中，有著恐怕會有讓晶圓破損之虞的問題。
據此，本發明之目的在於提供一種膠帶壓接裝置，即使以按壓滾輪將附膠帶之環狀框架的膠帶壓接於晶圓的背面，也不會有讓晶圓破損之情形。
用以解決課題之手段 根據本發明，可提供一種膠帶壓接裝置，將已壓接於在中央具備有容置晶圓之開口部的環狀框架上的膠帶壓接於該晶圓的背面，前述膠帶壓接裝置具備：上部腔室；下部腔室，容置有晶圓工作台，前述晶圓工作台具有保持面，前述保持面僅支撐該晶圓的外周剩餘區域且包含將器件區域設為非接觸的圓形凹部；升降機構，切換封閉狀態與開放狀態，前述封閉狀態是使該上部腔室下降而接觸於該下部腔室的狀態，前述開放狀態是使該上部腔室從該下部腔室離開的狀態；真空部，在該封閉狀態下將該上部腔室及該下部腔室形成為真空；大氣開放部，將該上部腔室及該下部腔室對大氣開放；及正壓生成組件，將空氣供給至該晶圓工作台的該圓形凹部，且將該圓形凹部內形成為比該上部腔室及該下部腔室的氣壓更高的正壓，在已將附膠帶之環狀框架的膠帶定位在已支撐於該晶圓工作台之該晶圓的背面的狀態下，作動該升降機構來維持該封閉狀態並且將該上部腔室及該下部腔室形成為真空，而且以已配設於該上部腔室之按壓滾輪將該附膠帶之環狀框架的該膠帶壓接於該晶圓的背面。
較理想的是，該按壓滾輪隔著膠帶按壓晶圓時，該正壓生成組件作動。亦可在晶圓之對應於外周剩餘區域的背面呈凸狀地形成有環狀的補強部。
發明效果 本發明之膠帶壓接裝置由於包含將空氣供給至晶圓工作台的圓形凹部，形成比上部腔室及下部腔室的氣壓更高的正壓之正壓生成組件，因此即使以按壓滾輪將附膠帶之環狀框架的膠帶壓接於晶圓的背面，也不會有讓晶圓破損之情形。
用以實施發明之形態 以下，針對本發明實施形態之膠帶壓接裝置，一面參照圖式一面進行說明。
(膠帶壓接裝置2) 如圖1所示，膠帶壓接裝置2具備：上部腔室4；下部腔室6；升降機構8，切換封閉狀態與開放狀態，前述封閉狀態是使上部腔室4下降而接觸於下部腔室6的狀態，前述開放狀態是使上部腔室4從下部腔室6離開的狀態；真空部10，在封閉狀態下將上部腔室4及下部腔室6形成為真空；及大氣開放部12，將上部腔室4及下部腔室6對大氣開放。
(上部腔室4) 上部腔室4包含圓形的頂板14與從頂板14的周緣垂下之圓筒狀的側壁16，且側壁16的下部是開放的。參照圖2及圖3來說明，在藉由頂板14的下表面與側壁16的內周面所規定的容置空間中配設有按壓滾輪18、支撐片20及X軸進給機構22(參照圖2)，前述按壓滾輪18用於將附膠帶之環狀框架的膠帶壓接於晶圓，前述支撐片20旋轉自如地支撐按壓滾輪18，前述X軸進給機構22使支撐片20在圖2中以箭頭X表示之X軸方向上移動。
如圖2所示，X軸進給機構22具有滾珠螺桿24與馬達26，前述滾珠螺桿24連結於支撐片20，且在X軸方向上延伸，前述馬達26使滾珠螺桿24旋轉。並且，X軸進給機構22藉由滾珠螺桿24將馬達26的旋轉運動轉換成直線運動並傳達至支撐片20，而使按壓滾輪18和支撐片20一起沿著在X軸方向上延伸的一對引導軌道28移動。
(下部腔室6) 如圖2及圖3所示，下部腔室6具有圓筒狀的側壁30。側壁30的上部是開放的，且側壁30的下部是封閉的。在側壁30的內部容置有保持晶圓及環狀框架的晶圓工作台32。
晶圓工作台32具有保持面34，前述保持面34僅保持晶圓的外周剩餘區域且形成為將器件區域設為非接觸的凹狀。保持面34具有環狀保持部36與圓形凹部38，前述環狀保持部36保持晶圓的外周剩餘區域及環狀框架，前述圓形凹部38對應於器件區域。在環狀保持部36中，沿著圓形凹部38的周緣配置有橡膠環40，在橡膠環40中，在圓周方向上隔著間隔而設置有複數個吸引孔40a。各吸引孔40a是透過流路42而連接於吸引源44(參照圖2)。
(升降機構8、真空部10、大氣開放部12) 升降機構8可由裝設在上部腔室4的頂板14的上表面之氣缸等之適當的致動器來構成。真空部10可由適當的真空泵來構成。真空部10是透過流路46而連接於下部腔室6。又，在流路46設置有大氣開放部12，前述大氣開放部12包含可將流路46對大氣開放之適當的閥。
(正壓生成組件48) 參照圖2及圖3繼續說明，本實施形態之膠帶壓接裝置2包含有正壓生成組件48，前述正壓生成組件48將空氣供給至晶圓工作台32的形成為凹狀的區域(圓形凹部38)，形成比上部腔室4及下部腔室6的氣壓更高的正壓。正壓生成組件48具有供給孔50與空氣供給源54(參照圖2)，前述供給孔50形成於圓形凹部38，前述空氣供給源54透過流路52而連接於供給孔50。
(晶圓W) 在圖4(a)中，顯示有圓板狀的晶圓W，前述晶圓W是藉由膠帶壓接裝置2壓接於附膠帶之環狀框架的膠帶。晶圓W可由矽(Si)或碳化矽(SiC)等之適當的半導體材料來形成。晶圓W的正面Wa具有圓形的器件區域Rd與圍繞器件區域Rd之外周剩餘區域Rs。器件區域Rd是藉由格子狀的切割道S來區劃成複數個矩形區域，且在複數個矩形區域的每一個中形成有IC、LSI等之器件D。另外，雖然為了方便起見而以二點鏈線來表示器件區域Rd與外周剩餘區域Rs的交界B，但實際上表示交界B的線並不存在。
在圖4(a)所示之晶圓W中，在對應於外周剩餘區域Rs的背面Wb呈凸狀地形成有環狀的補強部R。因此，外周剩餘區域Rs的厚度比器件區域Rd的厚度更大。
又，藉由膠帶壓接裝置2壓接於附膠帶之環狀框架的膠帶上的晶圓亦可如圖4(b)所示之晶圓W’，是環狀的補強部未設置於背面Wb’之物。另外，在以下之說明中，主要是針對將膠帶壓接於具有補強部R的晶圓W的情況進行記載。
(附膠帶之環狀框架FT) 在圖5中，顯示有可供上述之晶圓W壓接的附膠帶之環狀框架FT。附膠帶之環狀框架FT具備：環狀框架F，具備有容置晶圓W的開口部Fo；及圓形的黏著膠帶T，已壓接於環狀框架F上。
接著，針對如上述之膠帶壓接裝置2的作動進行說明。
在本實施形態中，首先使升降機構8作動，設成使上部腔室4從下部腔室6離開的開放狀態。接著，如圖2所示，在已將形成有器件D之正面Wa朝向下方的狀態下，將晶圓W載置於晶圓工作台32的保持面34。
將晶圓W載置於保持面34時，是將晶圓W的外周剩餘區域Rs定位在環狀保持部36的橡膠環40，並且將晶圓W的器件區域Rd定位在圓形凹部38。藉此，即使在已將形成有器件D之正面Wa朝向下方的狀態下，將晶圓W載置於晶圓工作台32的保持面34，也不會有器件區域Rd的器件D與保持面34接觸之情形，而可以防止器件D的損傷。
接著，使吸引源44作動，而在橡膠環40的各吸引孔40a生成吸引力，來吸引保持晶圓W的外周剩餘區域Rs。此時的吸引孔40a的壓力宜為例如絕對壓力100Pa左右。
使晶圓W吸引保持於晶圓工作台32後，將附膠帶之環狀框架FT載置於晶圓工作台32的環狀保持部36(參照圖2)。此時，將附膠帶之環狀框架FT的膠帶T定位在已支撐於晶圓工作台32之晶圓W的背面Wb，並且將膠帶T的黏著面朝向下方，使膠帶T的黏著面面對於晶圓W的背面Wb。
將附膠帶之環狀框架FT載置於晶圓工作台32後，藉由升降機構8使上部腔室4下降，並且使上部腔室4的側壁16的下端接觸於下部腔室6的側壁30的上端(參照圖3)。藉此，將上部腔室4及下部腔室6設成封閉狀態。如此一來，如圖6所示，按壓滾輪18會接觸於附膠帶之環狀框架FT，並且膠帶T的黏著面會接觸於晶圓W的補強部R的上端。
接著，在已將大氣開放部12關閉的狀態下使真空部10作動，將上部腔室4、下部腔室6的內部形成為真空。不過，上部腔室4、下部腔室6的內部的壓力會比吸引孔40a的壓力更大(例如絕對壓力200Pa左右)。藉此，吸引晶圓W的力固然會稍微減弱，但即使將上部腔室4、下部腔室6的內部形成為真空，也可以維持藉由晶圓工作台32來吸引保持晶圓W的狀態。
接著，如圖6及圖7所示，藉由X軸進給機構22讓已配設於上部腔室4之按壓滾輪18在X軸方向上滾動，並以按壓滾輪18將附膠帶之環狀框架FT的膠帶T壓接於晶圓W的背面Wb。此時，將會藉由按壓滾輪18隔著膠帶T朝下方按壓晶圓W。如此一來，晶圓W由於僅外周剩餘區域Rs被環狀保持部36的橡膠環40所支撐，且器件區域Rd已被定位在圓形凹部38，因此恐怕會有因按壓滾輪18所進行之按壓而使晶圓W朝下方撓曲，導致晶圓W破損之虞。
但是，本實施形態之膠帶壓接裝置2由於具備有將空氣供給至圓形凹部38，形成比上部腔室4、下部腔室6的氣壓更高的正壓之正壓生成組件48，因此可以防止因按壓滾輪18所進行之按壓而使晶圓W撓曲，導致晶圓W破損之情形。
具體而言，在以按壓滾輪18隔著膠帶T按壓晶圓W時，使正壓生成組件48的空氣供給源54作動，將空氣從供給孔50供給至圓形凹部38，且將圓形凹部38形成為比上部腔室4、下部腔室6的氣壓更高的正壓。此時，將圓形凹部38的氣壓設得比上部腔室4、下部腔室6的氣壓稍大，且大到可以抑制因按壓滾輪18所進行之按壓而使晶圓W撓曲之情形的程度。例如，在上部腔室4、下部腔室6的氣壓為絕對壓力200Pa左右的情況下，圓形凹部38的氣壓宜為絕對壓力300Pa左右。
如此，在本實施形態之膠帶壓接裝置2中，由於藉由正壓生成組件48將圓形凹部38形成為比上部腔室4、下部腔室6更高的正壓，因此在以按壓滾輪18隔著膠帶T按壓晶圓W時，可以抑制晶圓W撓曲之情形，而可以防止晶圓W的破損。
在以按壓滾輪18將膠帶T壓接於晶圓W時，若將上部腔室4、下部腔室6的內部形成為真空，便會如上述，造成由晶圓工作台32所產生之晶圓W的吸引力變弱。可是，在本實施形態中，由於晶圓W的外周剩餘區域Rs已被定位在環狀保持部36的橡膠環40，因此在以按壓滾輪18將膠帶T壓接於晶圓W時，可藉由橡膠環40與晶圓W之間的摩擦力，來防止晶圓W的位置偏移。
在本實施形態中，由於在晶圓W的背面Wb形成有環狀的補強部R，因此即使以按壓滾輪18將膠帶T壓接於晶圓W的背面Wb，有時仍會產生膠帶T未密合於環狀的補強部R的根部之部分。
關於這一點，在本實施形態中，是在已將上部腔室4、下部腔室6的內部形成為真空的狀態下，以按壓滾輪18將膠帶T壓接於晶圓W。從而，若在使按壓滾輪18移動後將大氣開放部12開放，便可以藉由大氣壓力來按壓膠帶T，使膠帶T沿著補強部R的根部密合於晶圓W。
另外，在本實施形態中，雖然針對膠帶T為黏著膠帶的情況進行了說明，但膠帶T亦可為在片材上未鋪設有黏著層的熱壓接膠帶。熱壓接膠帶為熱可塑性的合成樹脂(例如聚烯烴系樹脂)的膠帶，並且為當被加熱至熔點附近的溫度時，會軟化或熔融而發揮黏著力的膠帶。
在膠帶T為熱壓接膠帶的情況下，可以藉由將按壓滾輪18或晶圓工作台32的至少一者加熱至膠帶T軟化或熔融的溫度，而以按壓滾輪18將膠帶T熱壓接於晶圓W的背面Wb。
2:膠帶壓接裝置 4:上部腔室 6:下部腔室 8:升降機構 10:真空部 12:大氣開放部 14:頂板 16,30:側壁 18:按壓滾輪 20:支撐片 22:X軸進給機構 24:滾珠螺桿 26:馬達 28:引導軌道 32:晶圓工作台 34:保持面 36:環狀保持部 38:圓形凹部 40:橡膠環 40a:吸引孔 42,46,52:流路 44:吸引源 48:正壓生成組件 50:供給孔 54:空氣供給源 B:交界 D:器件 F:環狀框架 Fo:開口部 FT:附膠帶之環狀框架 R:補強部 Rd:器件區域 Rs:外周剩餘區域 S:切割道 T:膠帶,黏著膠帶 W,W’:晶圓 Wa,Wa’:正面 Wb,Wb’:背面 X:箭頭
圖1是本發明實施形態之膠帶壓接裝置的立體圖。 圖2是圖1所示之膠帶壓接裝置的分解立體圖。 圖3是圖1所示之膠帶壓接裝置的剖面圖。 圖4之(a)是有補強部之晶圓的立體圖，(b)是無補強部之晶圓的立體圖。 圖5是附膠帶之環狀框架的立體圖。 圖6是顯示開始膠帶之按壓的狀態的示意剖面圖。 圖7是顯示膠帶之按壓已結束的狀態的示意剖面圖。
2:膠帶壓接裝置
4:上部腔室
6:下部腔室
8:升降機構
14:頂板
16,30:側壁
18:按壓滾輪
20:支撐片
28:引導軌道
32:晶圓工作台
34:保持面
36:環狀保持部
38:圓形凹部
40:橡膠環
40a:吸引孔
42,46,52:流路
48:正壓生成組件
50:供給孔

Claims (3)

  1. 一種膠帶壓接裝置，將已壓接於在中央具備有容置晶圓的開口部之環狀框架上的膠帶壓接於該晶圓的背面，前述膠帶壓接裝置具備： 上部腔室； 下部腔室，容置有晶圓工作台，前述晶圓工作台具有保持面，前述保持面僅支撐該晶圓的外周剩餘區域且包含將器件區域設為非接觸的圓形凹部； 升降機構，切換封閉狀態與開放狀態，前述封閉狀態是使該上部腔室下降而接觸於該下部腔室的狀態，前述開放狀態是使該上部腔室從該下部腔室離開的狀態； 真空部，在該封閉狀態下將該上部腔室及該下部腔室形成為真空； 大氣開放部，將該上部腔室及該下部腔室對大氣開放；及 正壓生成組件，將空氣供給至該晶圓工作台的該圓形凹部，且將該圓形凹部內形成為比該上部腔室及該下部腔室的氣壓更高的正壓， 在已將附膠帶之環狀框架的膠帶定位在已支撐於該晶圓工作台之該晶圓的背面的狀態下，作動該升降機構來維持該封閉狀態並且將該上部腔室及該下部腔室形成為真空，而且以已配設於該上部腔室之按壓滾輪將該附膠帶之環狀框架的該膠帶壓接於該晶圓的背面。
  2. 如請求項1之膠帶壓接裝置，其中該按壓滾輪隔著該膠帶按壓該晶圓時，該正壓生成組件作動。
  3. 如請求項1之膠帶壓接裝置，其中在該晶圓之對應於該外周剩餘區域的背面呈凸狀地形成有環狀的補強部。
TW111141100A 2021-11-18 2022-10-28 膠帶壓接裝置 TW202322247A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-187887 2021-11-18
JP2021187887A JP2023074768A (ja) 2021-11-18 2021-11-18 テープ圧着装置

Publications (1)

Publication Number Publication Date
TW202322247A true TW202322247A (zh) 2023-06-01

Family

ID=86227260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111141100A TW202322247A (zh) 2021-11-18 2022-10-28 膠帶壓接裝置

Country Status (6)

Country Link
US (1) US20230154782A1 (zh)
JP (1) JP2023074768A (zh)
KR (1) KR20230073109A (zh)
CN (1) CN116137239A (zh)
DE (1) DE102022211985A1 (zh)
TW (1) TW202322247A (zh)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010062375A (ja) 2008-09-04 2010-03-18 Disco Abrasive Syst Ltd ウエーハの加工方法

Also Published As

Publication number Publication date
DE102022211985A1 (de) 2023-05-25
JP2023074768A (ja) 2023-05-30
US20230154782A1 (en) 2023-05-18
CN116137239A (zh) 2023-05-19
KR20230073109A (ko) 2023-05-25

Similar Documents

Publication Publication Date Title
JP5543813B2 (ja) ワーク搬送方法およびワーク搬送装置
TWI398916B (zh) 用以剝離電子組件的方法及設備
KR102507283B1 (ko) 기판 척 및 이를 포함하는 기판 접합 시스템
WO2011029890A1 (en) Tool for picking a planar object from a supply station
JP5772092B2 (ja) 半導体製造方法および半導体製造装置
JP5543812B2 (ja) 粘着テープ貼付け方法および粘着テープ貼付け装置
US20090026676A1 (en) Non-Contact Type Suction Holding Apparatus
KR101832016B1 (ko) 시트 부착 장치 및 부착 방법
JP4839294B2 (ja) 半導体ウエハ保持装置
KR101744371B1 (ko) 시트 부착 장치 및 부착 방법
KR101747485B1 (ko) 시트 부착 장치 및 부착 방법
JP5451335B2 (ja) マウント装置およびマウント方法
JP5957330B2 (ja) ウェーハ貼着装置
KR102515856B1 (ko) 척테이블
TW202322247A (zh) 膠帶壓接裝置
JP5551418B2 (ja) シート貼付装置およびシート貼付方法
TW201448105A (zh) 夾頭台
JP6353969B1 (ja) 搬送具と搬送方法と搬送具ユニット
JP2014017309A (ja) フィルム状樹脂積層装置
JP6472666B2 (ja) 板状ワークの保持方法
JP2011155099A (ja) シート貼付装置およびシート貼付方法
JP6625462B2 (ja) 半導体製造装置および半導体製造方法
TWI754344B (zh) 貼膜裝置及貼膜方法
JP2010165883A (ja) 半導体ウエハの搬送装置及び搬送方法
JP2007053277A (ja) エア吹き上げ式フィルムシート用エキスパンダ