TW202310378A - 光檢測器、光檢測器之製造方法及電子機器 - Google Patents

光檢測器、光檢測器之製造方法及電子機器 Download PDF

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Publication number
TW202310378A
TW202310378A TW111126217A TW111126217A TW202310378A TW 202310378 A TW202310378 A TW 202310378A TW 111126217 A TW111126217 A TW 111126217A TW 111126217 A TW111126217 A TW 111126217A TW 202310378 A TW202310378 A TW 202310378A
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TW
Taiwan
Prior art keywords
light
photodetector
pixel
photoelectric conversion
mentioned
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TW111126217A
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English (en)
Chinese (zh)
Inventor
納土晋一郎
岩瀬寿仁
横地界斗
鈴⽊理之
�田淳
蛯子芳樹
山本篤志
名取太知
⽵内幸⼀
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日商索尼半導體解決方案公司
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Publication of TW202310378A publication Critical patent/TW202310378A/zh

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8057Optical shielding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8067Reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/807Pixel isolation structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
TW111126217A 2021-08-06 2022-07-13 光檢測器、光檢測器之製造方法及電子機器 TW202310378A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021130073 2021-08-06
JP2021-130073 2021-08-06

Publications (1)

Publication Number Publication Date
TW202310378A true TW202310378A (zh) 2023-03-01

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Country Link
US (1) US20250120206A1 (https=)
EP (1) EP4383332A4 (https=)
JP (1) JPWO2023013408A1 (https=)
KR (1) KR20240037970A (https=)
CN (1) CN117616576A (https=)
DE (1) DE112022003847T5 (https=)
TW (1) TW202310378A (https=)
WO (1) WO2023013408A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117936559A (zh) * 2023-12-31 2024-04-26 深圳阜时科技有限公司 光电转换像素阵列以及系统

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024225102A1 (ja) * 2023-04-28 2024-10-31 ソニーセミコンダクタソリューションズ株式会社 光検出装置および測距装置
JP2025030261A (ja) * 2023-08-23 2025-03-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
WO2025177838A1 (ja) * 2024-02-21 2025-08-28 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20250318298A1 (en) 2024-04-08 2025-10-09 Visera Technologies Company Ltd. Image sensor
WO2025229714A1 (ja) * 2024-04-30 2025-11-06 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4882224B2 (ja) 2004-11-26 2012-02-22 ソニー株式会社 固体撮像装置の製造方法
JP5342821B2 (ja) * 2008-07-16 2013-11-13 パナソニック株式会社 固体撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
US8981510B2 (en) * 2010-06-04 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ridge structure for back side illuminated image sensor
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
WO2013172232A1 (ja) * 2012-05-16 2013-11-21 ソニー株式会社 固体撮像装置、及び、電子機器
KR102568789B1 (ko) * 2016-03-10 2023-08-21 삼성전자주식회사 무기 컬러 필터를 포함하는 컬러 필터 어레이, 상기 컬러 필터 어레이를 포함하는 이미지 센서 및 디스플레이 장치
US10050159B2 (en) * 2016-12-12 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Lens structure
JP2018098641A (ja) 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、プログラム、および電子機器
JP2018156999A (ja) * 2017-03-16 2018-10-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子装置
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
JP7461294B2 (ja) * 2017-08-31 2024-04-03 メタレンズ,インコーポレイテッド 透過型メタサーフェスレンズ統合
JP2021015869A (ja) * 2019-07-11 2021-02-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
EP3812801B1 (en) * 2019-10-23 2024-06-19 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic device including the image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117936559A (zh) * 2023-12-31 2024-04-26 深圳阜时科技有限公司 光电转换像素阵列以及系统

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Publication number Publication date
JPWO2023013408A1 (https=) 2023-02-09
EP4383332A1 (en) 2024-06-12
WO2023013408A1 (ja) 2023-02-09
US20250120206A1 (en) 2025-04-10
EP4383332A4 (en) 2024-10-23
DE112022003847T5 (de) 2024-06-20
KR20240037970A (ko) 2024-03-22
CN117616576A (zh) 2024-02-27

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