CN117616576A - 光电探测器、光电探测器的制造方法和电子设备 - Google Patents

光电探测器、光电探测器的制造方法和电子设备 Download PDF

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Publication number
CN117616576A
CN117616576A CN202280049236.7A CN202280049236A CN117616576A CN 117616576 A CN117616576 A CN 117616576A CN 202280049236 A CN202280049236 A CN 202280049236A CN 117616576 A CN117616576 A CN 117616576A
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CN
China
Prior art keywords
light
photodetector
pixel
photoelectric conversion
pixels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280049236.7A
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English (en)
Chinese (zh)
Inventor
纳土晋一郎
岩濑寿仁
横地界斗
铃木理之
戸田淳
蛯子芳树
山本笃志
名取太知
竹内幸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN117616576A publication Critical patent/CN117616576A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202280049236.7A 2021-08-06 2022-07-19 光电探测器、光电探测器的制造方法和电子设备 Pending CN117616576A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021130073 2021-08-06
JP2021-130073 2021-08-06
PCT/JP2022/028108 WO2023013408A1 (ja) 2021-08-06 2022-07-19 光検出器、光検出器の製造方法及び電子機器

Publications (1)

Publication Number Publication Date
CN117616576A true CN117616576A (zh) 2024-02-27

Family

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Family Applications (1)

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CN202280049236.7A Pending CN117616576A (zh) 2021-08-06 2022-07-19 光电探测器、光电探测器的制造方法和电子设备

Country Status (8)

Country Link
US (1) US20250120206A1 (https=)
EP (1) EP4383332A4 (https=)
JP (1) JPWO2023013408A1 (https=)
KR (1) KR20240037970A (https=)
CN (1) CN117616576A (https=)
DE (1) DE112022003847T5 (https=)
TW (1) TW202310378A (https=)
WO (1) WO2023013408A1 (https=)

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* Cited by examiner, † Cited by third party
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WO2024225102A1 (ja) * 2023-04-28 2024-10-31 ソニーセミコンダクタソリューションズ株式会社 光検出装置および測距装置
JP2025030261A (ja) * 2023-08-23 2025-03-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
CN117936559A (zh) * 2023-12-31 2024-04-26 深圳阜时科技有限公司 光电转换像素阵列以及系统
WO2025177838A1 (ja) * 2024-02-21 2025-08-28 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20250318298A1 (en) 2024-04-08 2025-10-09 Visera Technologies Company Ltd. Image sensor
WO2025229714A1 (ja) * 2024-04-30 2025-11-06 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

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JP4882224B2 (ja) 2004-11-26 2012-02-22 ソニー株式会社 固体撮像装置の製造方法
JP5342821B2 (ja) * 2008-07-16 2013-11-13 パナソニック株式会社 固体撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
US8981510B2 (en) * 2010-06-04 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ridge structure for back side illuminated image sensor
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
WO2013172232A1 (ja) * 2012-05-16 2013-11-21 ソニー株式会社 固体撮像装置、及び、電子機器
KR102568789B1 (ko) * 2016-03-10 2023-08-21 삼성전자주식회사 무기 컬러 필터를 포함하는 컬러 필터 어레이, 상기 컬러 필터 어레이를 포함하는 이미지 센서 및 디스플레이 장치
US10050159B2 (en) * 2016-12-12 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Lens structure
JP2018098641A (ja) 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、プログラム、および電子機器
JP2018156999A (ja) * 2017-03-16 2018-10-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子装置
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
JP7461294B2 (ja) * 2017-08-31 2024-04-03 メタレンズ，インコーポレイテッド 透過型メタサーフェスレンズ統合
JP2021015869A (ja) * 2019-07-11 2021-02-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
EP3812801B1 (en) * 2019-10-23 2024-06-19 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic device including the image sensor

Also Published As

Publication number Publication date
JPWO2023013408A1 (https=) 2023-02-09
EP4383332A1 (en) 2024-06-12
WO2023013408A1 (ja) 2023-02-09
US20250120206A1 (en) 2025-04-10
TW202310378A (zh) 2023-03-01
EP4383332A4 (en) 2024-10-23
DE112022003847T5 (de) 2024-06-20
KR20240037970A (ko) 2024-03-22

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