KR20240037970A - 광 검출기, 광 검출기의 제조 방법 및 전자 기기 - Google Patents

광 검출기, 광 검출기의 제조 방법 및 전자 기기 Download PDF

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Publication number
KR20240037970A
KR20240037970A KR1020247002534A KR20247002534A KR20240037970A KR 20240037970 A KR20240037970 A KR 20240037970A KR 1020247002534 A KR1020247002534 A KR 1020247002534A KR 20247002534 A KR20247002534 A KR 20247002534A KR 20240037970 A KR20240037970 A KR 20240037970A
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KR
South Korea
Prior art keywords
light
pixel
deflection
photodetector
photoelectric conversion
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Pending
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KR1020247002534A
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English (en)
Korean (ko)
Inventor
신이치로 노우도
도시히토 이와세
가이토 요코치
마사유키 스즈키
아츠시 도다
요시키 에비코
아츠시 야마모토
다이치 나토리
고이치 다케우치
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20240037970A publication Critical patent/KR20240037970A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • H01L27/14625—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H01L27/14603—
    • H01L27/1462—
    • H01L27/1463—
    • H01L27/14685—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020247002534A 2021-08-06 2022-07-19 광 검출기, 광 검출기의 제조 방법 및 전자 기기 Pending KR20240037970A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021130073 2021-08-06
JPJP-P-2021-130073 2021-08-06
PCT/JP2022/028108 WO2023013408A1 (ja) 2021-08-06 2022-07-19 光検出器、光検出器の製造方法及び電子機器

Publications (1)

Publication Number Publication Date
KR20240037970A true KR20240037970A (ko) 2024-03-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247002534A Pending KR20240037970A (ko) 2021-08-06 2022-07-19 광 검출기, 광 검출기의 제조 방법 및 전자 기기

Country Status (8)

Country Link
US (1) US20250120206A1 (https=)
EP (1) EP4383332A4 (https=)
JP (1) JPWO2023013408A1 (https=)
KR (1) KR20240037970A (https=)
CN (1) CN117616576A (https=)
DE (1) DE112022003847T5 (https=)
TW (1) TW202310378A (https=)
WO (1) WO2023013408A1 (https=)

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WO2024225102A1 (ja) * 2023-04-28 2024-10-31 ソニーセミコンダクタソリューションズ株式会社 光検出装置および測距装置
JP2025030261A (ja) * 2023-08-23 2025-03-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
CN117936559A (zh) * 2023-12-31 2024-04-26 深圳阜时科技有限公司 光电转换像素阵列以及系统
WO2025177838A1 (ja) * 2024-02-21 2025-08-28 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20250318298A1 (en) 2024-04-08 2025-10-09 Visera Technologies Company Ltd. Image sensor
WO2025229714A1 (ja) * 2024-04-30 2025-11-06 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156515A (ja) 2004-11-26 2006-06-15 Sony Corp 固体撮像装置及びその製造方法

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JP5342821B2 (ja) * 2008-07-16 2013-11-13 パナソニック株式会社 固体撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
US8981510B2 (en) * 2010-06-04 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ridge structure for back side illuminated image sensor
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
WO2013172232A1 (ja) * 2012-05-16 2013-11-21 ソニー株式会社 固体撮像装置、及び、電子機器
KR102568789B1 (ko) * 2016-03-10 2023-08-21 삼성전자주식회사 무기 컬러 필터를 포함하는 컬러 필터 어레이, 상기 컬러 필터 어레이를 포함하는 이미지 센서 및 디스플레이 장치
US10050159B2 (en) * 2016-12-12 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Lens structure
JP2018098641A (ja) 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、プログラム、および電子機器
JP2018156999A (ja) * 2017-03-16 2018-10-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子装置
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
JP7461294B2 (ja) * 2017-08-31 2024-04-03 メタレンズ，インコーポレイテッド 透過型メタサーフェスレンズ統合
JP2021015869A (ja) * 2019-07-11 2021-02-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
EP3812801B1 (en) * 2019-10-23 2024-06-19 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic device including the image sensor

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2006156515A (ja) 2004-11-26 2006-06-15 Sony Corp 固体撮像装置及びその製造方法

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Publication number Publication date
JPWO2023013408A1 (https=) 2023-02-09
EP4383332A1 (en) 2024-06-12
WO2023013408A1 (ja) 2023-02-09
US20250120206A1 (en) 2025-04-10
TW202310378A (zh) 2023-03-01
EP4383332A4 (en) 2024-10-23
DE112022003847T5 (de) 2024-06-20
CN117616576A (zh) 2024-02-27

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