JPWO2023013408A1 - - Google Patents

Info

Publication number
JPWO2023013408A1
JPWO2023013408A1 JP2023540237A JP2023540237A JPWO2023013408A1 JP WO2023013408 A1 JPWO2023013408 A1 JP WO2023013408A1 JP 2023540237 A JP2023540237 A JP 2023540237A JP 2023540237 A JP2023540237 A JP 2023540237A JP WO2023013408 A1 JPWO2023013408 A1 JP WO2023013408A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023540237A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023013408A1 publication Critical patent/JPWO2023013408A1/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8057Optical shielding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8067Reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/807Pixel isolation structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/811Interconnections

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023540237A 2021-08-06 2022-07-19 Pending JPWO2023013408A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021130073 2021-08-06
PCT/JP2022/028108 WO2023013408A1 (ja) 2021-08-06 2022-07-19 光検出器、光検出器の製造方法及び電子機器

Publications (1)

Publication Number Publication Date
JPWO2023013408A1 true JPWO2023013408A1 (https=) 2023-02-09

Family

ID=85155979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023540237A Pending JPWO2023013408A1 (https=) 2021-08-06 2022-07-19

Country Status (8)

Country Link
US (1) US20250120206A1 (https=)
EP (1) EP4383332A4 (https=)
JP (1) JPWO2023013408A1 (https=)
KR (1) KR20240037970A (https=)
CN (1) CN117616576A (https=)
DE (1) DE112022003847T5 (https=)
TW (1) TW202310378A (https=)
WO (1) WO2023013408A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024225102A1 (ja) * 2023-04-28 2024-10-31 ソニーセミコンダクタソリューションズ株式会社 光検出装置および測距装置
JP2025030261A (ja) * 2023-08-23 2025-03-07 ソニーセミコンダクタソリューションズ株式会社 光検出装置および電子機器
CN117936559A (zh) * 2023-12-31 2024-04-26 深圳阜时科技有限公司 光电转换像素阵列以及系统
WO2025177838A1 (ja) * 2024-02-21 2025-08-28 ソニーセミコンダクタソリューションズ株式会社 光検出装置
US20250318298A1 (en) 2024-04-08 2025-10-09 Visera Technologies Company Ltd. Image sensor
WO2025229714A1 (ja) * 2024-04-30 2025-11-06 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4882224B2 (ja) 2004-11-26 2012-02-22 ソニー株式会社 固体撮像装置の製造方法
JP5342821B2 (ja) * 2008-07-16 2013-11-13 パナソニック株式会社 固体撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
US8981510B2 (en) * 2010-06-04 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Ridge structure for back side illuminated image sensor
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
WO2013172232A1 (ja) * 2012-05-16 2013-11-21 ソニー株式会社 固体撮像装置、及び、電子機器
KR102568789B1 (ko) * 2016-03-10 2023-08-21 삼성전자주식회사 무기 컬러 필터를 포함하는 컬러 필터 어레이, 상기 컬러 필터 어레이를 포함하는 이미지 센서 및 디스플레이 장치
US10050159B2 (en) * 2016-12-12 2018-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Lens structure
JP2018098641A (ja) 2016-12-13 2018-06-21 ソニーセミコンダクタソリューションズ株式会社 画像処理装置、画像処理方法、プログラム、および電子機器
JP2018156999A (ja) * 2017-03-16 2018-10-04 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子装置
JP6987529B2 (ja) 2017-05-15 2022-01-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子、撮像素子の製造方法、電子機器、及び、撮像モジュール
JP7461294B2 (ja) * 2017-08-31 2024-04-03 メタレンズ,インコーポレイテッド 透過型メタサーフェスレンズ統合
JP2021015869A (ja) * 2019-07-11 2021-02-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
EP3812801B1 (en) * 2019-10-23 2024-06-19 Samsung Electronics Co., Ltd. Image sensor including color separating lens array and electronic device including the image sensor

Also Published As

Publication number Publication date
EP4383332A1 (en) 2024-06-12
WO2023013408A1 (ja) 2023-02-09
US20250120206A1 (en) 2025-04-10
TW202310378A (zh) 2023-03-01
EP4383332A4 (en) 2024-10-23
DE112022003847T5 (de) 2024-06-20
KR20240037970A (ko) 2024-03-22
CN117616576A (zh) 2024-02-27

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