JPWO2023021632A1 - - Google Patents

Info

Publication number
JPWO2023021632A1
JPWO2023021632A1 JP2023542110A JP2023542110A JPWO2023021632A1 JP WO2023021632 A1 JPWO2023021632 A1 JP WO2023021632A1 JP 2023542110 A JP2023542110 A JP 2023542110A JP 2023542110 A JP2023542110 A JP 2023542110A JP WO2023021632 A1 JPWO2023021632 A1 JP WO2023021632A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023542110A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023021632A1 publication Critical patent/JPWO2023021632A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings
    • H10F39/8053Colour filters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8067Reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023542110A 2021-08-18 2021-08-18 Pending JPWO2023021632A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/030262 WO2023021632A1 (ja) 2021-08-18 2021-08-18 光学素子、撮像素子及び撮像装置

Publications (1)

Publication Number Publication Date
JPWO2023021632A1 true JPWO2023021632A1 (https=) 2023-02-23

Family

ID=85240259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023542110A Pending JPWO2023021632A1 (https=) 2021-08-18 2021-08-18

Country Status (3)

Country Link
US (2) US12364042B2 (https=)
JP (1) JPWO2023021632A1 (https=)
WO (1) WO2023021632A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US20160260762A1 (en) * 2015-03-02 2016-09-08 Samsung Electronics Co., Ltd. Image sensor including color filter and method of manufacturing the image sensor
JP2021069118A (ja) * 2019-10-23 2021-04-30 三星電子株式会社Samsung Electronics Co.,Ltd. 色分離レンズアレイを具備するイメージセンサ、及びそれを含む電子装置
JP2021069119A (ja) * 2019-10-23 2021-04-30 三星電子株式会社Samsung Electronics Co.,Ltd. 色分離レンズアレイを具備するイメージセンサ、及びそれを含む電子装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009252978A (ja) * 2008-04-04 2009-10-29 Panasonic Corp 固体撮像素子およびその製造方法
JP2012064703A (ja) * 2010-09-15 2012-03-29 Sony Corp 撮像素子および撮像装置
JP6356557B2 (ja) * 2013-09-30 2018-07-11 株式会社豊田中央研究所 レンズおよびその製造方法
US10790325B2 (en) * 2015-07-29 2020-09-29 Samsung Electronics Co., Ltd. Imaging apparatus and image sensor including the same
US11711600B2 (en) * 2019-07-09 2023-07-25 Samsung Electronics Co., Ltd. Meta-optical device and optical apparatus including the same
CN113257846A (zh) * 2020-02-11 2021-08-13 三星电子株式会社 图像传感器和包括图像传感器的电子设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015028960A (ja) * 2011-12-01 2015-02-12 ソニー株式会社 固体撮像装置および電子機器
US20160260762A1 (en) * 2015-03-02 2016-09-08 Samsung Electronics Co., Ltd. Image sensor including color filter and method of manufacturing the image sensor
JP2021069118A (ja) * 2019-10-23 2021-04-30 三星電子株式会社Samsung Electronics Co.,Ltd. 色分離レンズアレイを具備するイメージセンサ、及びそれを含む電子装置
JP2021069119A (ja) * 2019-10-23 2021-04-30 三星電子株式会社Samsung Electronics Co.,Ltd. 色分離レンズアレイを具備するイメージセンサ、及びそれを含む電子装置

Also Published As

Publication number Publication date
US12364042B2 (en) 2025-07-15
US20250366235A1 (en) 2025-11-27
WO2023021632A1 (ja) 2023-02-23
US20240347566A1 (en) 2024-10-17

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