TW202235994A - 反射型光罩基底、反射型光罩及半導體裝置之製造方法 - Google Patents

反射型光罩基底、反射型光罩及半導體裝置之製造方法 Download PDF

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Publication number
TW202235994A
TW202235994A TW110148672A TW110148672A TW202235994A TW 202235994 A TW202235994 A TW 202235994A TW 110148672 A TW110148672 A TW 110148672A TW 110148672 A TW110148672 A TW 110148672A TW 202235994 A TW202235994 A TW 202235994A
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TW
Taiwan
Prior art keywords
film
absorber
reflective
substrate
absorber film
Prior art date
Application number
TW110148672A
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English (en)
Chinese (zh)
Inventor
浜本和宏
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日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202235994A publication Critical patent/TW202235994A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW110148672A 2020-12-25 2021-12-24 反射型光罩基底、反射型光罩及半導體裝置之製造方法 TW202235994A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-217573 2020-12-25
JP2020217573 2020-12-25

Publications (1)

Publication Number Publication Date
TW202235994A true TW202235994A (zh) 2022-09-16

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ID=82159101

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110148672A TW202235994A (zh) 2020-12-25 2021-12-24 反射型光罩基底、反射型光罩及半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US20240027891A1 (https=)
JP (1) JPWO2022138360A1 (https=)
KR (1) KR20230119120A (https=)
TW (1) TW202235994A (https=)
WO (1) WO2022138360A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI912892B (zh) * 2023-12-27 2026-01-21 台灣積體電路製造股份有限公司 極紫外光微影空白遮罩、極紫外光遮罩及方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024009809A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JP7392236B1 (ja) * 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
KR20250044824A (ko) * 2022-07-30 2025-04-01 에이에스엠엘 네델란즈 비.브이. Euv 리소그래피용 반사 부재
JP2025157630A (ja) * 2022-09-09 2025-10-16 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
WO2024162084A1 (ja) * 2023-01-31 2024-08-08 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02123730A (ja) * 1988-11-02 1990-05-11 Hitachi Ltd 放射線露光用マスクおよびその製造方法
JPH04711A (ja) * 1990-04-18 1992-01-06 Toshiba Corp Ｘ線露光マスク及びこれを用いたｘ線露光装置
JP3078163B2 (ja) 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
JP3226250B2 (ja) * 1995-04-26 2001-11-05 ホーヤ株式会社 転写マスク
DE60113727D1 (de) * 2001-02-05 2006-02-09 Quantiscript Inc Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP4926523B2 (ja) 2006-03-31 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP4602430B2 (ja) 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
KR101727783B1 (ko) 2010-06-15 2017-04-17 칼 짜이스 에스엠테 게엠베하 Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법
JP5910625B2 (ja) * 2011-03-07 2016-04-27 旭硝子株式会社 多層基板、多層基板の製造方法、多層基板の品質管理方法
KR101490603B1 (ko) * 2013-07-15 2015-02-09 한양대학교 산학협력단 극자외선 노광 공정용 마스크
TWI623805B (zh) * 2015-08-17 2018-05-11 S&S Tech Co., Ltd. 用於極紫外線微影之空白遮罩及使用其之光罩
TWI821984B (zh) 2016-07-27 2023-11-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法
JP2018044979A (ja) * 2016-09-12 2018-03-22 大日本印刷株式会社 反射型マスクおよびその製造方法
US11187972B2 (en) * 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
US11137675B2 (en) * 2018-08-14 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Mask and method for forming the same
US20220179304A1 (en) * 2019-03-29 2022-06-09 Hoya Corporation Mask blank substrate, substrate with multi-layer reflective coating, reflection-type mask blank, reflection-type mask, transmission-type mask blank, transmission-type mask, and semiconductor device production method
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
US11592737B2 (en) * 2020-05-29 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
US11852965B2 (en) * 2020-10-30 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with tantalum base alloy absorber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI912892B (zh) * 2023-12-27 2026-01-21 台灣積體電路製造股份有限公司 極紫外光微影空白遮罩、極紫外光遮罩及方法

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Publication number Publication date
KR20230119120A (ko) 2023-08-16
US20240027891A1 (en) 2024-01-25
JPWO2022138360A1 (https=) 2022-06-30
WO2022138360A1 (ja) 2022-06-30

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