JPWO2022138360A1 - - Google Patents
Info
- Publication number
- JPWO2022138360A1 JPWO2022138360A1 JP2022572213A JP2022572213A JPWO2022138360A1 JP WO2022138360 A1 JPWO2022138360 A1 JP WO2022138360A1 JP 2022572213 A JP2022572213 A JP 2022572213A JP 2022572213 A JP2022572213 A JP 2022572213A JP WO2022138360 A1 JPWO2022138360 A1 JP WO2022138360A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020217573 | 2020-12-25 | ||
| PCT/JP2021/046193 WO2022138360A1 (ja) | 2020-12-25 | 2021-12-15 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022138360A1 true JPWO2022138360A1 (https=) | 2022-06-30 |
| JPWO2022138360A5 JPWO2022138360A5 (https=) | 2024-11-12 |
Family
ID=82159101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022572213A Pending JPWO2022138360A1 (https=) | 2020-12-25 | 2021-12-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240027891A1 (https=) |
| JP (1) | JPWO2022138360A1 (https=) |
| KR (1) | KR20230119120A (https=) |
| TW (1) | TW202235994A (https=) |
| WO (1) | WO2022138360A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024009809A1 (ja) * | 2022-07-05 | 2024-01-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| JP7392236B1 (ja) * | 2022-07-05 | 2023-12-06 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| WO2024009819A1 (ja) * | 2022-07-05 | 2024-01-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| KR20250044824A (ko) * | 2022-07-30 | 2025-04-01 | 에이에스엠엘 네델란즈 비.브이. | Euv 리소그래피용 반사 부재 |
| JP2025157630A (ja) * | 2022-09-09 | 2025-10-16 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
| WO2024162084A1 (ja) * | 2023-01-31 | 2024-08-08 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法 |
| US20250216764A1 (en) * | 2023-12-27 | 2025-07-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Euv lithography mask blanks, euv masks and methods |
| WO2025253899A1 (ja) * | 2024-06-03 | 2025-12-11 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02123730A (ja) * | 1988-11-02 | 1990-05-11 | Hitachi Ltd | 放射線露光用マスクおよびその製造方法 |
| JPH04711A (ja) * | 1990-04-18 | 1992-01-06 | Toshiba Corp | Ｘ線露光マスク及びこれを用いたｘ線露光装置 |
| JPH08297361A (ja) * | 1995-04-26 | 1996-11-12 | Hoya Corp | 転写マスク |
| JP2004525506A (ja) * | 2001-02-05 | 2004-08-19 | クァンティスクリプト・インコーポレーテッド | Ｘ線／ｅｕｖ投影リソグラフィによる金属／半導体化合物の構造の作製方法 |
| JP2007273678A (ja) * | 2006-03-31 | 2007-10-18 | Hoya Corp | 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法 |
| KR20150009083A (ko) * | 2013-07-15 | 2015-01-26 | 한양대학교 산학협력단 | 극자외선 노광 공정용 마스크 |
| KR20170021191A (ko) * | 2015-08-17 | 2017-02-27 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
| JP2018044979A (ja) * | 2016-09-12 | 2018-03-22 | 大日本印刷株式会社 | 反射型マスクおよびその製造方法 |
| WO2020203338A1 (ja) * | 2019-03-29 | 2020-10-08 | Hoya株式会社 | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、透過型マスクブランク、透過型マスク、及び半導体装置の製造方法 |
| WO2020235612A1 (ja) * | 2019-05-21 | 2020-11-26 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3078163B2 (ja) | 1993-10-15 | 2000-08-21 | キヤノン株式会社 | リソグラフィ用反射型マスクおよび縮小投影露光装置 |
| JP4212025B2 (ja) | 2002-07-04 | 2009-01-21 | Ｈｏｙａ株式会社 | 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法 |
| JP4602430B2 (ja) | 2008-03-03 | 2010-12-22 | 株式会社東芝 | 反射型マスク及びその作製方法 |
| KR101727783B1 (ko) | 2010-06-15 | 2017-04-17 | 칼 짜이스 에스엠테 게엠베하 | Euv 리소그래피를 위한 마스크, euv 리소그래피 시스템 그리고 마스크의 결상을 최적화하는 방법 |
| JP5910625B2 (ja) * | 2011-03-07 | 2016-04-27 | 旭硝子株式会社 | 多層基板、多層基板の製造方法、多層基板の品質管理方法 |
| TWI821984B (zh) | 2016-07-27 | 2023-11-11 | 美商應用材料股份有限公司 | 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法 |
| US11187972B2 (en) * | 2016-10-21 | 2021-11-30 | Hoya Corporation | Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device |
| US11137675B2 (en) * | 2018-08-14 | 2021-10-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mask and method for forming the same |
| US11592737B2 (en) * | 2020-05-29 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | EUV photo masks and manufacturing method thereof |
| US11852965B2 (en) * | 2020-10-30 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask with tantalum base alloy absorber |
-
2021
- 2021-12-15 WO PCT/JP2021/046193 patent/WO2022138360A1/ja not_active Ceased
- 2021-12-15 US US18/266,057 patent/US20240027891A1/en active Pending
- 2021-12-15 KR KR1020237018833A patent/KR20230119120A/ko active Pending
- 2021-12-15 JP JP2022572213A patent/JPWO2022138360A1/ja active Pending
- 2021-12-24 TW TW110148672A patent/TW202235994A/zh unknown
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02123730A (ja) * | 1988-11-02 | 1990-05-11 | Hitachi Ltd | 放射線露光用マスクおよびその製造方法 |
| JPH04711A (ja) * | 1990-04-18 | 1992-01-06 | Toshiba Corp | Ｘ線露光マスク及びこれを用いたｘ線露光装置 |
| JPH08297361A (ja) * | 1995-04-26 | 1996-11-12 | Hoya Corp | 転写マスク |
| JP2004525506A (ja) * | 2001-02-05 | 2004-08-19 | クァンティスクリプト・インコーポレーテッド | Ｘ線／ｅｕｖ投影リソグラフィによる金属／半導体化合物の構造の作製方法 |
| JP2007273678A (ja) * | 2006-03-31 | 2007-10-18 | Hoya Corp | 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法 |
| KR20150009083A (ko) * | 2013-07-15 | 2015-01-26 | 한양대학교 산학협력단 | 극자외선 노광 공정용 마스크 |
| KR20170021191A (ko) * | 2015-08-17 | 2017-02-27 | 주식회사 에스앤에스텍 | 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크 |
| JP2018044979A (ja) * | 2016-09-12 | 2018-03-22 | 大日本印刷株式会社 | 反射型マスクおよびその製造方法 |
| WO2020203338A1 (ja) * | 2019-03-29 | 2020-10-08 | Hoya株式会社 | マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク、透過型マスクブランク、透過型マスク、及び半導体装置の製造方法 |
| WO2020235612A1 (ja) * | 2019-05-21 | 2020-11-26 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230119120A (ko) | 2023-08-16 |
| US20240027891A1 (en) | 2024-01-25 |
| TW202235994A (zh) | 2022-09-16 |
| WO2022138360A1 (ja) | 2022-06-30 |
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