KR20230119120A - 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Download PDF

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Publication number
KR20230119120A
KR20230119120A KR1020237018833A KR20237018833A KR20230119120A KR 20230119120 A KR20230119120 A KR 20230119120A KR 1020237018833 A KR1020237018833 A KR 1020237018833A KR 20237018833 A KR20237018833 A KR 20237018833A KR 20230119120 A KR20230119120 A KR 20230119120A
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KR
South Korea
Prior art keywords
film
absorber
reflective mask
absorber film
mask blank
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237018833A
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English (en)
Korean (ko)
Inventor
가즈히로 하마모또
Original Assignee
호야 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20230119120A publication Critical patent/KR20230119120A/ko
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H01L21/0274—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020237018833A 2020-12-25 2021-12-15 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법 Pending KR20230119120A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020217573 2020-12-25
JPJP-P-2020-217573 2020-12-25
PCT/JP2021/046193 WO2022138360A1 (ja) 2020-12-25 2021-12-15 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20230119120A true KR20230119120A (ko) 2023-08-16

Family

ID=82159101

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237018833A Pending KR20230119120A (ko) 2020-12-25 2021-12-15 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US20240027891A1 (https=)
JP (1) JPWO2022138360A1 (https=)
KR (1) KR20230119120A (https=)
TW (1) TW202235994A (https=)
WO (1) WO2022138360A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024009809A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
JP7392236B1 (ja) * 2022-07-05 2023-12-06 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
WO2024009819A1 (ja) * 2022-07-05 2024-01-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
KR20250044824A (ko) * 2022-07-30 2025-04-01 에이에스엠엘 네델란즈 비.브이. Euv 리소그래피용 반사 부재
JP2025157630A (ja) * 2022-09-09 2025-10-16 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
WO2024162084A1 (ja) * 2023-01-31 2024-08-08 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、および反射型マスクの製造方法
US20250216764A1 (en) * 2023-12-27 2025-07-03 Taiwan Semiconductor Manufacturing Company, Ltd. Euv lithography mask blanks, euv masks and methods
WO2025253899A1 (ja) * 2024-06-03 2025-12-11 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクおよび反射型マスクの製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114173A (ja) 1993-10-15 1995-05-02 Canon Inc リソグラフィ用反射型マスクおよび縮小投影露光装置
JP2004039884A (ja) 2002-07-04 2004-02-05 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2007273678A (ja) 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2009212220A (ja) 2008-03-03 2009-09-17 Toshiba Corp 反射型マスク及びその作製方法
JP2013532381A (ja) 2010-06-15 2013-08-15 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法
JP2019527382A (ja) 2016-07-27 2019-09-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 合金吸収体を有する極紫外線マスクブランク、及びその製造方法

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JPH02123730A (ja) * 1988-11-02 1990-05-11 Hitachi Ltd 放射線露光用マスクおよびその製造方法
JPH04711A (ja) * 1990-04-18 1992-01-06 Toshiba Corp Ｘ線露光マスク及びこれを用いたｘ線露光装置
JP3226250B2 (ja) * 1995-04-26 2001-11-05 ホーヤ株式会社 転写マスク
DE60113727D1 (de) * 2001-02-05 2006-02-09 Quantiscript Inc Herstellung von strukturen einer metall/halbleiter-verbindung durch röntgenstrahl/euv-projektionslithographie
JP5910625B2 (ja) * 2011-03-07 2016-04-27 旭硝子株式会社 多層基板、多層基板の製造方法、多層基板の品質管理方法
KR101490603B1 (ko) * 2013-07-15 2015-02-09 한양대학교 산학협력단 극자외선 노광 공정용 마스크
TWI623805B (zh) * 2015-08-17 2018-05-11 S&S Tech Co., Ltd. 用於極紫外線微影之空白遮罩及使用其之光罩
JP2018044979A (ja) * 2016-09-12 2018-03-22 大日本印刷株式会社 反射型マスクおよびその製造方法
US11187972B2 (en) * 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
US11137675B2 (en) * 2018-08-14 2021-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Mask and method for forming the same
US20220179304A1 (en) * 2019-03-29 2022-06-09 Hoya Corporation Mask blank substrate, substrate with multi-layer reflective coating, reflection-type mask blank, reflection-type mask, transmission-type mask blank, transmission-type mask, and semiconductor device production method
WO2020235612A1 (ja) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
US11592737B2 (en) * 2020-05-29 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
US11852965B2 (en) * 2020-10-30 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Extreme ultraviolet mask with tantalum base alloy absorber

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114173A (ja) 1993-10-15 1995-05-02 Canon Inc リソグラフィ用反射型マスクおよび縮小投影露光装置
JP2004039884A (ja) 2002-07-04 2004-02-05 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2007273678A (ja) 2006-03-31 2007-10-18 Hoya Corp 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
JP2009212220A (ja) 2008-03-03 2009-09-17 Toshiba Corp 反射型マスク及びその作製方法
JP2013532381A (ja) 2010-06-15 2013-08-15 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用のマスク、ｅｕｖリソグラフィシステム、及びマスクの結像を最適化する方法
JP2019527382A (ja) 2016-07-27 2019-09-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 合金吸収体を有する極紫外線マスクブランク、及びその製造方法

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Publication number Publication date
US20240027891A1 (en) 2024-01-25
TW202235994A (zh) 2022-09-16
JPWO2022138360A1 (https=) 2022-06-30
WO2022138360A1 (ja) 2022-06-30

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