TW202234472A - 複合晶圓及其製造方法 - Google Patents
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- 239000002131 composite material Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 238000000034 method Methods 0.000 claims abstract description 29
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims abstract description 14
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 42
- 230000010287 polarization Effects 0.000 claims description 16
- 229910004541 SiN Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- 230000004913 activation Effects 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 230000003213 activating effect Effects 0.000 claims description 2
- 230000002999 depolarising effect Effects 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 27
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001994 activation Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000678 plasma activation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
本發明的解決手段為提供一種複合晶圓之製造方法,具備:準備支持基板之階段,該支持基板為鉭酸鋰及鈮酸鋰之任一者,且實質上並未極化、與準備活性基板之階段,該活性基板為貼合在支持基板的一面側之鉭酸鋰及鈮酸鋰之任一者,並極化、與於活性基板注入離子,生成界面之階段、與貼合支持基板與活性基板之階段、與昇溫貼合之支持基板與活性基板之階段、與於界面剝離活性基板之階段。又,並提供該複合晶圓。
Description
本發明係關於複合晶圓及其製造方法。
有一種藉由透過金屬膜,將預先注入氫離子之鉭酸鋰(亦有簡稱為Lithium Tantalate: LT的情況)的晶圓貼合在鉭酸鋰的晶圓,進行熱處理,回避起因於熱膨脹係數差之問題,並且以熱剝離之方法(例如參照非專利文獻1)。
[先前技術文獻]
[非專利文獻]
[非專利文獻1] “3-inch single crystal LiTaO3 films onto metallic electrode using SmartCut
TMtechnology” Tauzin et al.
ELECTRIC LETTERS, 19
thJune 2008, Vol.44 No.13
[發明欲解決之課題]
於支持晶圓使用鉭酸鋰或鈮酸鋰(亦有簡稱為Lithium Niobate: LN的情況)時,因應作為支持晶圓之LT或LN所具有之極化,於活性層之薄膜LT或LN亦產生電荷,導致對特性給予不良影響。
[用以解決課題之手段]
在本發明之第1態樣,複合晶圓具備:支持基板與活性層,該支持基板為鉭酸鋰及鈮酸鋰之任一者,且實質上並未極化,該活性層為貼合在支持基板的一面側之鉭酸鋰及鈮酸鋰之任一者,並極化。
可進一步具備配在支持基板與活性層之間的介在層。介在層可具有絕緣性。介在層可包含SiO
2、SiON及SiN之至少一個。
在本發明之第2態樣,為複合晶圓之製造方法,具備:準備支持基板之階段,該支持基板為鉭酸鋰及鈮酸鋰之任一者,且實質上並未極化、與準備活性基板之階段,該活性基板為貼合在支持基板的一面側之鉭酸鋰及鈮酸鋰之任一者,並極化、與於活性基板注入離子,生成界面之階段、與貼合支持基板與活性基板之階段、與昇溫貼合之支持基板與前述活性基板之階段、與於界面剝離活性基板之階段。
可進一步具備於貼合之階段前,在支持基板或活性基板彼此貼合的面之至少一側,形成介在層之階段。介在層可具有絕緣性。介在層可包含SiO
2、SiON及SiN之至少一個。介在層可用PVD法及CVD法之任一者形成。
可進一步具備於貼合之階段前,活性化處理支持基板或活性基板彼此貼合的面之至少一側之階段。活性化處理可包含電漿處理。準備支持基板之階段可包含無極性化支持基板所預先具有之極化之階段。
尚,上述之發明的概要並非列舉本發明之特徵的全部者。又,此等之特徵群的次組合又亦可成為發明。
以下,雖通過發明之實施的形態說明本發明,但以下之實施形態並非限定該申請專利範圍之發明者。又,於實施形態當中所說明之特徵的組合的全部對發明之解決手段並非一定必須。
圖1為示意性表示有關本實施形態之複合晶圓10之剖面圖。複合晶圓10具備:作為支持基板之LT基板400、與配在LT基板400的一面之介在層200、與作為配在和在介在層200之LT基板400相反側的面之活性層之LT層110。
LT層110極化中。例如,LT層110為單晶,即使沒有外部電場,於結晶之Z軸方向亦進行電氣性極化。藉此,LT層110成為發揮壓電效果等之機能的活性層。
LT層110例如具有數百nm的厚度。取代LT層110,可使用LN層。
另一方面,LT基板400實質上並未極化。於此,所謂實質上並未極化,不僅包含無外部電場的情況下完全未極化的狀態,亦包含不是故意產生而是最初開始就產生之極化的狀態、即使經由消除極化之步驟亦殘留之極化的狀態、極化至對LT層110發揮機能不會產生障礙的程度的狀態等,至少較LT層110之極化更弱。進而,例如LT基板400的極化較佳為以d33儀錶的絕對值為0.5pC/N以下。
LT基板400例如具有數百μm的厚度,並給予操作複合晶圓10時之機械性強度。取代LT基板400,可使用與活性層膨脹係數差較小之其他基板,例如LN基板。
介在層200在厚度方向,配在LT層110與LT基板400之間。介在層200較佳為具有絕緣性,又,較佳為以研磨容易出現鏡面等加工容易。介在層200可為SiO
2、SiON及SiN之至少一個。介在層200在未施加外部電壓的狀態並未極化。
圖2示意性表示複合晶圓10之製造方法的各階段。
圖2之(a)表示準備LT基板100之階段。LT基板100在複合晶圓10,其一部分成為LT層110。因此,LT基板100亦可說是活性基板。LT基板100係例如從藉由上拉法所形成之LT單晶錠,切出數百μm的厚度的板狀者。於LT基板100已沿著結晶之Z軸,進行施加高電壓之極化處理,藉此即使無外部電壓,亦產生沿著該Z軸之極化。
圖2之(b)表示於LT基板100注入離子之階段。藉由從LT基板100之一側的面,注入H
+等之離子,從該一側的面,於數百nm的厚度形成離子注入界面300。尚,該一側的面為在貼合之階段,接近所貼合之側的面。
圖2之(c)表示於LT基板100之該一側的面,形成介在層200之階段。介在層200例如以PVD法及CVD法之任一種形成。
圖2之(d)表示準備作為支持基板之LT基板400之階段。LT基板400與LT基板100相同,例如係從藉由上拉法所形成之LT單晶錠,切出數百μm的厚度的板狀者。另一方面,於LT基板400並未進行LT基板100之極化處理。LT基板400於未施加外部電壓的情況下,實質上並未極化。
尚,對於LT基板400,可積極地進行無極性化之處理。例如,藉由將LT基板400昇溫至居里點(Curie point)(相轉移點)以上的溫度,來破壞LT基板400所產生之極化。尚,LT的居里點為607℃前後,LN之居里點為1160℃前後。
圖2之(e)表示貼合LT基板100與LT基板400之階段。較佳為於貼合LT基板100與LT基板400之前,活性化處理被貼合的面的至少一者。尚,如本實施形態,於LT基板100之一側的面設置介在層200的情況下,與LT基板400的貼合面成為與在介在層200之LT基板100相反側的面。因此,較佳為活性化處理介在層200及LT基板400的貼合面之至少一者。活性化處理包含例如電漿處理。
於上述貼合面,貼合LT基板100與LT基板400。在本實施形態,透過介在層20,貼合LT基板100與LT基板400。活性化處理貼合面的至少一者的情況下,貼合階段於常溫進行即可。尚,取代活性化處理,可於貼合階段進行數百度的高溫(及即使為任意但為高壓)貼合。
圖2之(f)表示剝離LT基板100之階段。在剝離LT基板100之階段,首先,將彼此貼合之LT基板100、介在層200及LT基板400昇溫至例如200℃左右或其以上。進而,於離子注入界面300,物理性剝離LT基板100。藉此,LT基板100之貼合面側的一部分作為LT層110殘留,而形成複合晶圓10。
以上,根據本實施形態,藉由於成為活性層之LT基板100與成為支持基板之LT基板400,使用熱膨脹係數相等或接近者,使得於熱處理時難以產生翹曲,並可昇溫至可剝離的溫度為止。進而,由於成為支持基板之LT基板400實質上並未極化,可避免對活性層之LT層110的不良影響。
[實施例1]
於0.35mm厚之42°Y切割LT100mmφ的晶圓(有極化),將SiO
2以PVD(濺鍍)法進行700nm成膜,並進行研磨定為500m。將此晶圓於各種之支持基板以電漿活性化法實施表面處理後,進行貼合並昇溫。將記錄此時之破壞溫度者示於圖3。膨脹係數差較大者於低溫產生破壞,將無差異之LT或LN使用在支持基板者,並未產生破壞。認為作為支持基板,使用LT或LN,從防止基板破裂的觀點來看為有效。
[實施例2]
於0.35mm厚之160°Y切割LN100mmφ晶圓(有極化),將SiO
2以PVD(濺鍍)法進行700nm成膜,並進行研磨定為500m。將此晶圓於各種之支持基板以電漿活性化法實施表面處理後,進行貼合並昇溫。結果與實施例1相同。
[實施例3]
於成為活性層之0.35mm厚之42°Y切割LT100mmφ晶圓(有極化),將H
+離子以100keV並以7.5e16atoms/cm
2的注入量注入。接著,將SiO
2以PVD(濺鍍)法進行成膜,並進行研磨。將此晶圓於各種之支持基板以電漿活性化法實施表面處理後,進行貼合並昇溫至180℃。接著,以SiGen法(機械剝離法)沿著植入(Impla)界面,進行剝離,並研磨表面,將LT的厚度定為500nm,進行550℃之熱處理,而得到複合晶圓。
於此等之複合晶圓製作諧振器,並在2GHz附近,測定Qmax值。所謂Q值,為信號峰值之尖銳度,該值為量測裝置之性能的指標。將結果示於圖4。由此結果,判斷出於支持晶圓,使用無極化之LT或LN者為特性最為良好。
[實施例4]
使用成為活性層之0.35mm厚之160°Y切割LN100mmφ(有極化)晶圓,進行與實施例3相同之實驗。將剝離前之昇溫溫度定為450℃。結果顯示與實施例3相同的傾向。
[實施例5]
在實施例1,即使將介在層以CVD(化學氣相沈積)法成膜,將介在層的材質變更為SiON、SiN,結果亦幾乎相同。判斷本發明並未依賴介在層之成膜方法或材質。
以上,雖將本發明使用實施的形態說明,但本發明之技術範圍並非被限定於上述實施的形態所記載的範圍。於上述實施的形態可加上多樣之變更或改良為本發明領域具有通常知識者可輕易瞭解。加上該多樣之變更或改良的形態亦可包含本發明之技術範圍,從申請專利範圍的記載可清楚明白。
應注意在申請專利範圍、說明書及圖面中所表示之裝置、系統、程式及方法之操作、程序、步驟及階段等之各處理的實行順序,只要未特別明示「更早之前」、「之前」等,且除非將之前處理的輸出於之後的處理使用,即可以任意的順序實現。關於申請專利範圍、說明書及圖面中之操作流程,方便上即使使用「首先」、「接著」等進行說明,並非意指必須依此順序實施。
10:複合晶圓
100:LT基板
110:LT層
200:介在層
300:離子注入界面
400:LT基板
[圖1]示意性表示有關本實施形態之複合晶圓10之剖面圖。
[圖2]示意性表示複合晶圓10之製造方法的各階段。
[圖3]表示支持基板與破壞溫度的關係。
[圖4]表示支持基板與Qmax值的關係。
10:複合晶圓
110:LT層
200:介在層
400:LT基板
Claims (12)
- 一種複合晶圓,具備支持基板與活性層,該支持基板為鉭酸鋰及鈮酸鋰之任一者,且實質上並未極化,該活性層為貼合在前述支持基板的一面側之鉭酸鋰及鈮酸鋰之任一者,並極化。
- 如請求項1之複合晶圓,其係進一步具備配在前述支持基板與前述活性層之間的介在層。
- 如請求項2之複合晶圓,其中,前述介在層具有絕緣性。
- 如請求項2之複合晶圓,其中,前述介在層包含SiO 2、SiON及SiN之至少一個。
- 一種複合晶圓之製造方法,具備:準備支持基板之階段,該支持基板為鉭酸鋰及鈮酸鋰之任一者,且實質上並未極化、與 準備活性基板之階段,該活性基板為貼合在前述支持基板的一面側之鉭酸鋰及鈮酸鋰之任一者,並極化、與 於前述活性基板注入離子,生成界面之階段、與 貼合前述支持基板與前述活性基板之階段、與 昇溫貼合之前述支持基板與前述活性基板之階段、與 於前述界面剝離前述活性基板之階段。
- 如請求項5之複合晶圓之製造方法,其係進一步具備於前述貼合之階段前,在前述支持基板或前述活性基板彼此貼合的面之至少一側,形成介在層之階段。
- 如請求項6之複合晶圓之製造方法,其中,前述介在層具有絕緣性。
- 如請求項6之複合晶圓之製造方法,其中,前述介在層包含SiO 2、SiON及SiN之至少一個。
- 如請求項6之複合晶圓之製造方法,其中,前述介在層係以PVD法及CVD法之任一種形成。
- 如請求項5之複合晶圓之製造方法,其係進一步具備於前述貼合之階段前,活性化處理前述支持基板或前述活性基板彼此貼合的面之至少一側之階段。
- 如請求項10之複合晶圓之製造方法,其中,前述活性化處理包含電漿處理。
- 如請求項5之複合晶圓之製造方法,其中,準備前述支持基板之階段包含無極性化前述支持基板所預先具有之極化之階段。
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