TW202234154A - 感放射線性樹脂組成物、抗蝕劑圖案形成方法及聚合物 - Google Patents

感放射線性樹脂組成物、抗蝕劑圖案形成方法及聚合物 Download PDF

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Publication number
TW202234154A
TW202234154A TW110146163A TW110146163A TW202234154A TW 202234154 A TW202234154 A TW 202234154A TW 110146163 A TW110146163 A TW 110146163A TW 110146163 A TW110146163 A TW 110146163A TW 202234154 A TW202234154 A TW 202234154A
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TW
Taiwan
Prior art keywords
group
radiation
structural unit
polymer
resin composition
Prior art date
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TW110146163A
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English (en)
Chinese (zh)
Inventor
錦織克聰
桐山和也
谷口拓弘
丸山研
Original Assignee
日商 Jsr 股份有限公司
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Application filed by 日商 Jsr 股份有限公司 filed Critical 日商 Jsr 股份有限公司
Publication of TW202234154A publication Critical patent/TW202234154A/zh

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW110146163A 2021-02-22 2021-12-09 感放射線性樹脂組成物、抗蝕劑圖案形成方法及聚合物 TW202234154A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-026687 2021-02-22
JP2021026687 2021-02-22

Publications (1)

Publication Number Publication Date
TW202234154A true TW202234154A (zh) 2022-09-01

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ID=83060942

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110146163A TW202234154A (zh) 2021-02-22 2021-12-09 感放射線性樹脂組成物、抗蝕劑圖案形成方法及聚合物

Country Status (3)

Country Link
JP (1) JP2022128400A (ja)
KR (1) KR20220120440A (ja)
TW (1) TW202234154A (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5292078B2 (ja) 2008-12-05 2013-09-18 富士フイルム株式会社 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP6287369B2 (ja) 2013-03-08 2018-03-07 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP6450660B2 (ja) 2014-08-25 2019-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

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Publication number Publication date
KR20220120440A (ko) 2022-08-30
JP2022128400A (ja) 2022-09-01

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