KR20220120440A - 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 중합체 - Google Patents

감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 중합체 Download PDF

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Publication number
KR20220120440A
KR20220120440A KR1020210179610A KR20210179610A KR20220120440A KR 20220120440 A KR20220120440 A KR 20220120440A KR 1020210179610 A KR1020210179610 A KR 1020210179610A KR 20210179610 A KR20210179610 A KR 20210179610A KR 20220120440 A KR20220120440 A KR 20220120440A
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KR
South Korea
Prior art keywords
group
preferable
radiation
structural unit
resin composition
Prior art date
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KR1020210179610A
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English (en)
Korean (ko)
Inventor
가츠아키 니시코리
가즈야 기리야마
다쿠히로 다니구치
겐 마루야마
Original Assignee
제이에스알 가부시끼가이샤
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Publication of KR20220120440A publication Critical patent/KR20220120440A/ko

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020210179610A 2021-02-22 2021-12-15 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 중합체 KR20220120440A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021026687 2021-02-22
JPJP-P-2021-026687 2021-02-22

Publications (1)

Publication Number Publication Date
KR20220120440A true KR20220120440A (ko) 2022-08-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210179610A KR20220120440A (ko) 2021-02-22 2021-12-15 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 중합체

Country Status (3)

Country Link
JP (1) JP2022128400A (ja)
KR (1) KR20220120440A (ja)
TW (1) TW202234154A (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法

Also Published As

Publication number Publication date
JP2022128400A (ja) 2022-09-01
TW202234154A (zh) 2022-09-01

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