TW202226503A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW202226503A
TW202226503A TW110140931A TW110140931A TW202226503A TW 202226503 A TW202226503 A TW 202226503A TW 110140931 A TW110140931 A TW 110140931A TW 110140931 A TW110140931 A TW 110140931A TW 202226503 A TW202226503 A TW 202226503A
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Taiwan
Prior art keywords
package
interposer
semiconductor device
dummy metal
die
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TW110140931A
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English (en)
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TWI795059B (zh
Inventor
楊柏俊
許文松
陳泰宇
林世欽
洪坤廷
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聯發科技股份有限公司
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Publication of TW202226503A publication Critical patent/TW202226503A/zh
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Abstract

本發明公開一種半導體裝置，包括：底部封裝；頂部封裝，堆疊在底部封裝上；中介層，設置於底部封裝與頂部封裝之間，其中頂部封裝透過複數個週邊焊球電性連接至中介層；以及複數個虛設金屬部件，設置在中介層上並由複數個週邊焊球圍繞，其中複數個虛設金屬部件形成在中介層的相應的虛設焊盤上，其中複數個虛設金屬部件中的每一個的高度比週邊焊球的高度小。

Description

半導體裝置
本發明涉及半導體技術領域，尤其涉及一種半導體裝置。
近年來出現的電子設備的快速發展促使消費電子產品對更大功能的需求，特別強調多功能性、小型化和減輕重量。由於半導體技術保持相對不變，這些限制使得微電子結構的設計更加複雜和具有挑戰性。
高頻寬封裝 (High-bandwidth package on package，HBPoP) 已被引入作為處理器的潛在候選者，該處理器可併入智慧手機、平板電腦和其他消費電子產品中。 HBPoP 的優勢在於訊號傳輸的高頻寬和短路徑，適用於高性能計算。
然而，與倒裝晶片晶片規模封裝(flip-chip chip scale package，FCCSP)相比，由於DRAM頂部封裝的額外熱阻（thermal resistance），HBPoP的熱性能更差。此外，由於中介層和 DRAM 頂部封裝之間的焊球沒有得到保護，HBPoP 的可靠性較差。用底部填充劑很難填充中介層和 DRAM 頂部封裝之間的間隙。
有鑑於此，本發明提供一種半導體裝置，涉及在中介層上具有虛設熱特徵（虛設金屬部件）的熱增強型封裝上封裝(package-on-package，PoP)，以提高半導體裝置的散熱效率。
根據本發明的第一方面，公開一種半導體裝置，包括：
底部封裝；
頂部封裝，堆疊在該底部封裝上；
中介層，設置於該底部封裝與該頂部封裝之間，其中該頂部封裝透過週邊焊球電性連接至該中介層；以及
虛設金屬部件，設置在該中介層上並由週邊焊球圍繞，其中該虛設金屬部件形成在該中介層的相應的虛設焊盤上，其中該虛設金屬部件中的每一個的高度比該週邊焊球的高度小。
根據本發明的第二方面，公開一種半導體裝置，包括：
底部封裝；
頂部封裝，堆疊在該底部封裝上；
中介層，設置於該底部封裝與該頂部封裝之間，其中該頂部封裝透過週邊焊球電性連接至該中介層；以及
熱晶粒，設置在該中介層上並由該週邊焊球圍繞。
本發明的半導體裝置由於包括：底部封裝；頂部封裝，堆疊在該底部封裝上；中介層，設置於該底部封裝與該頂部封裝之間，其中該頂部封裝透過週邊焊球電性連接至該中介層；以及虛設金屬部件，設置在該中介層上並由週邊焊球圍繞，其中該虛設金屬部件形成在該中介層的相應的虛設焊盤上，其中該虛設金屬部件中的每一個的高度比該週邊焊球的高度小。採用這種方式，在頂部封裝與中介層之間施加底部填料時，可以利用虛設金屬部件對底部填料形成毛細效應，從而將底部填料填充在頂部封裝與中介層之間的間隙中，這樣便可以利用底部填料較高的導熱率來將熱量進行散發，進一步提高散熱效率。
在下面對本發明的實施例的詳細描述中，參考了附圖，這些附圖構成了本發明的一部分，並且在附圖中透過圖示的方式示出了可以實踐本發明的特定的優選實施例。對這些實施例進行了足夠詳細的描述，以使所屬技術領域具有通常知識者能夠實踐它們，並且應當理解，在不脫離本發明的精神和範圍的情況下，可以利用其他實施例，並且可以進行機械，結構和程式上的改變。本發明。因此，以下詳細描述不應被理解為限制性的，並且本發明的實施例的範圍僅由所附申請專利範圍限定。
將理解的是，儘管術語“第一”、“第二”、“第三”、“主要”、“次要”等在本文中可用於描述各種元件、組件、區域、層和/或部分，但是這些元件、組件、區域、這些層和/或部分不應受到這些術語的限制。這些術語僅用於區分一個元件、組件、區域、層或部分與另一區域、層或部分。因此，在不脫離本發明構思的教導的情況下，下面討論的第一或主要元件、組件、區域、層或部分可以稱為第二或次要元件、組件、區域、層或部分。
此外，為了便於描述，本文中可以使用諸如“在...下方”、“在...之下”、“在...下”、“在...上方”、“在...之上”之類的空間相對術語，以便於描述一個元件或特徵與之的關係。如圖所示的另一元件或特徵。除了在圖中描述的方位之外，空間相對術語還意圖涵蓋設備在使用或運行中的不同方位。該裝置可以以其他方式定向（旋轉90度或以其他定向），並且在此使用的空間相對描述語可以同樣地被相應地解釋。另外，還將理解的是，當“層”被稱為在兩層“之間”時，它可以是兩層之間的唯一層，或者也可以存在一個或複數個中間層。
術語“大約”、“大致”和“約”通常表示規定值的±20％、或所述規定值的±10％、或所述規定值的±5％、或所述規定值的±3％、或規定值的±2％、或規定值的±1％、或規定值的±0.5％的範圍內。本發明的規定值是近似值。當沒有具體描述時，所述規定值包括“大約”、“大致”和“約”的含義。本文所使用的術語僅出於描述特定實施例的目的，並不旨在限制本發明。如本文所使用的，單數術語“一”，“一個”和“該”也旨在包括複數形式，除非上下文另外明確指出。本文所使用的術語僅出於描述特定實施例的目的，並不旨在限制本發明構思。如本文所使用的，單數形式“一個”、“一種”和“該”也旨在包括複數形式，除非上下文另外明確指出。
將理解的是，當將“元件”或“層”稱為在另一元件或層“上”、“連接至”、“耦接至”或“鄰近”時，它可以直接在其他元件或層上、與其連接、耦接或相鄰、或者可以存在中間元件或層。相反，當元件稱為“直接在”另一元件或層“上”、“直接連接至”、“直接耦接至”或“緊鄰”另一元件或層時，則不存在中間元件或層。
注意：（i）在整個附圖中相同的特徵將由相同的附圖標記表示，並且不一定在它們出現的每個附圖中都進行詳細描述，並且（ii）一系列附圖可能顯示單個專案的不同方面，每個方面都與各種參考標籤相關聯，這些參考標籤可能會出現在整個序列中，或者可能只出現在序列的選定圖中。
本發明涉及熱增強的層疊封裝(package-on-package，PoP)並且可以適用於高頻寬PoP(high-bandwidth PoP，HBPoP)或Info-PoP(integrated fan-out-PoP，整合扇出型PoP)。 PoP 是涉及將一個晶片封裝堆疊在另一個晶片封裝之上的被稱為半導體封裝的方案。例如，PoP 可以將垂直分立的記憶體和邏輯球柵陣列 (ball grid array，BGA) 封裝進行組合。在 PoP 封裝設計中，頂部封裝可以透過週邊焊球（peripheral solder ball）互連（interconnected）到底部封裝。
由於DRAM頂部封裝的額外熱阻，HBPoP的熱性能並不令人滿意。此外，HBPoP 的可靠性較差，因為中介層和 DRAM 頂部封裝之間的焊球沒有得到保護。本發明解決了這些問題。根據一些實施例，HBPoP設置有虛設熱特徵（dummy thermal feature）或虛設金屬部件，例如設置在中介層上的虛設金屬特徵（dummy metal feature）或熱晶粒（thermal die）。
圖1是示出根據本發明的一個實施例的示例性PoP的示意性截面圖。如圖1所示，PoP 1包括底部封裝10和堆疊在底部封裝10上的頂部封裝20。根據一個實施例，頂部封裝20可以是記憶體封裝，但不限於此。根據一個實施例，底部封裝10可以包括以倒裝晶片方式安裝在封裝基板(或底部基板)100上的半導體晶片101。根據一個實施例，例如，封裝基板100可以是三層（three-layer，3L）或四層（four-layer，4L）無芯（coreless）嵌入式跡線基板（embedded trace substrate，ETS），但不限於此。根據一個實施例，諸如邏輯晶粒或系統單晶片(system on a chip，SoC)的半導體晶片101可以透過諸如銅凸塊、柱或微凸塊的複數個連接元件112電連接到封裝基板100，但不限於此。
根據一個實施例，在封裝基板100的下表面上，可以提供複數個球柵陣列(ball grid array，BGA)焊球SB。例如，封裝基板100下表面的BGA焊球SB的間距可以等於或小於0.35mm，但不限於此。半導體晶片101可以由包塑件（over-mold）140包覆或封裝，包塑件140例如是工程模塑料（engineering molding compound）或模塑料。
根據一個實施例，例如，頂部封裝20可以包括安裝在封裝基板（或頂部基板）200上的至少一個記憶體晶片201。根據一個實施例，例如，記憶體晶片201可以是高頻寬記憶體 (high-bandwidth memory，HBM) 晶片或低功耗 DRAM (low-power DRAM，LPDRAM) 晶片，但不限於此。根據一個實施例，例如，記憶體晶片201可以透過接合線（bond wire）203電連接到封裝基板200。記憶體晶片201、接合線（接合引線）203和封裝基板200的頂表面200a由包塑件（或頂部包塑件） 240包覆或封裝。
根據一個實施例，頂部封裝20透過中間的中介層30電連接到底部封裝10。根據一個實施例，例如，中介層30可以是兩層有芯基板（cored substrate），但不限於此。中介層30可以包括互連結構301，該互連結構301電連接到穿模通孔（through mold via）150，例如嵌入在包塑件140中並設置在半導體晶片101的周邊周圍的銅柱。
根據一個實施例，頂部封裝20安裝在中介層30上並且透過複數個週邊焊球PSB電連接到中介層30。根據一個實施例，在頂部封裝20和中介層30之間形成小的間隙40。根據一個實施例，間隙40填充有毛細管底部填料（capillary underfill）410。毛細管底部填料410圍繞並保護週邊焊球PSB，從而提高 PoP 1的可靠性。
根據一個實施例，為了便於在間隙40內形成毛細管底部填料410，可以在間隙40的中心區域40c處提供複數個虛設金屬部件420，虛設金屬部件420例如是銅柱或凸塊圖案（bump pattern），虛設金屬部件420被週邊焊球PSB圍繞並且位於半導體晶片101的上方，在一個實施例中虛設金屬部件420可以在半導體晶片101的正上方（也即俯視方向上兩者重合），在另一個實施例中也可以至少有部分虛設金屬部件420在半導體晶片101的其他位置，例如俯視方向上不與半導體晶片101重合的位置。虛設金屬部件420可以透過本領域已知的任何合適的方法形成，例如電鍍或沉積。虛設金屬部件420的數量可以根據需要設置，俯視方向上看，複數個虛設金屬部件420形成陣列，該陣列中的虛設金屬部件420可以是規則排布的，或者也可以是隨機排布的。在頂部封裝與中介層之間施加底部填料時，可以利用虛設金屬部件對底部填料形成毛細效應，從而將底部填料填充在頂部封裝與中介層之間的間隙中，這樣便可以利用底部填料較高的導熱率來將熱量進行散發，進一步提高散熱效率。
透過在中介層 30 上提供虛設金屬部件 420，毛細管底部填料 410 可以利用毛細管效應填充到間隙 40 中。根據一個實施例，每個虛設金屬部件420的高度小於週邊焊球PSB的高度，使得虛設金屬部件420不與封裝基板200的底表面200b直接接觸，這樣在將頂部封裝20安裝在底部封裝10上時，避免了虛設金屬部件420對安裝的干擾，保證安裝後頂部封裝20結構不會被破壞。根據一個實施例，虛設金屬部件420可以形成在中介層30的各個虛設焊盤320上。然而，應當理解，在一些實施例中，虛設金屬部件420的高度可以等於週邊焊球PSB的高度，使得虛設金屬部件420與封裝基板200的底表面200b直接接觸。
根據一個實施例，虛設焊盤320可以是電性浮置焊盤（electrically floating pad），這意味著在虛設焊盤320的下方沒有形成通孔以將虛設焊盤320電連接到中介層30中的任何其他互連結構，或者意味著虛設焊盤320沒有接電。在另一個實施例中，至少一些虛設焊盤320可以電連接到中介層30中的接地跡線或接地結構，這樣可以透過虛設焊盤320連接到接地跡線或接地結構的方式增加散熱路徑，提高散熱效率。使用虛設金屬部件420來散發由半導體晶片101產生的熱量也是有益的。毛細管底部填料 410 和虛設金屬部件 420 一起增強了 PoP 1 的熱性能。具體來說，在間隙40中無法填充底部填料或其他填充物時，間隙40中是空氣（當然還有周邊焊球PSB），而空氣的散熱效率非常低，從而導致半導體晶片101的散熱速度慢、效率低。本發明中在中介層30上設置複數個虛設金屬部件420，這樣在加入底部填料（例如可以是模塑料等）時，可以利用複數個虛設金屬部件420形成的毛細效應來使的底部填料填充到間隙中，甚至填充滿（或幾乎填充滿）整個間隙40，而底部填料的導熱率遠大於空氣，因此採用本發明的上述方案可以明顯的提高散熱效率，使得半導體晶片101的熱量透過半導體晶片101上方的散熱路徑更多的進行散發，使半導體晶片及封裝的工作更加穩定可靠。
圖2是示出中介層上的虛設金屬部件的示例性佈局的透視頂視圖，其中相同的數字編號表示相同的元件、區域或層。圖 3 是沿圖 2 中的線 I-I' 截取的截面圖。如圖 2 和圖 3 所示，7x7 銅柱或凸塊陣列作為中介層上的虛設金屬特徵（虛設金屬部件）的示例進行了演示。應當理解，虛設金屬部件420和週邊焊球PSB的佈局和數量僅用於說明目的。在圖3中，虛設金屬部件420不與封裝基板200的底表面200b直接接觸。透過將至少部分虛設焊盤320連接到中介層30中的接地跡線或接地結構303，熱量耗散效率可以進一步提高。因此，毛細管底部填料410、虛設金屬部件420或虛設焊盤320可以用作POP 1的散熱元件。在一些實施例中，虛設金屬部件420可以與封裝基板200的底表面200b直接接觸。圖2所示的示例中，虛設金屬部件420可以規則的排布，形成矩形的虛設金屬部件420陣列，這樣方便製造。虛設金屬部件420陣列也可以是其他形狀的，例如三角形、梯形等等。此外，圖2的實施例中虛設金屬部件420陣列的周圍佈滿了周邊焊球PSB，在其他實施例中，周邊焊球PSB可以沒有佈滿虛設金屬部件420陣列的周圍，例如虛設金屬部件420陣列的一側沒有佈置周邊焊球PSB，而是由虛設金屬部件420代替。
圖 4 至圖 10 示出了根據一些實施例的中介層上的虛設金屬部件的各種佈局，其中圖 7 是沿圖 6 中的線 II-II' 截取的截面圖，圖 9 是沿圖8中的線III-III'截取的截面圖。如圖4所示，虛設金屬部件420可沿第一方向D1彼此對齊並沿第二方向D2以交錯方式佈置。如圖5所示，虛設金屬部件420可以佈置在圓形區域40c’內，圖5的示例中虛設金屬部件420的佈置並不規則，例如為隨機排布形成的虛設金屬部件420陣列。本發明的上述佈置方式可以根據需要或製程要求自由選擇，提高了本發明的高散熱效率的半導體裝置的設計彈性。
如圖6和圖7所示，虛設金屬部件420可以是焊球。在圖7中，虛設金屬部件420不與封裝基板200的底表面200b直接接觸。然而，可以理解的是，在一些實施例中，虛設金屬部件420可以與底表面200b直接接觸封裝基板 200。如圖6-7所示的示例中，虛設金屬部件420可以採用與周邊焊球PSB相似或相同的製程形成，這樣可以更加方便製造，節省製程步驟。
如圖8和圖9所示，虛設金屬部件420可以具有圓柱形狀。在圖9中，虛設金屬部件420不與封裝基板200的底表面200b直接接觸。然而，可以理解的是，在一些實施例中，虛設金屬部件420可以與底表面200b直接接觸封裝基板 200。如圖6-7所示的示例中，圓柱形狀的虛設金屬部件420可以更好的控制虛設金屬部件420之間間距，得到合適的間距，以更充分的使底部填料充滿間隙40。
如圖10所示，每個虛設金屬部件420可以具有沿第一方向Dl延伸並沿第二方向D2交錯排列的條形或棒條形。在圖10中，毛細管底部填料410可以沿著第一方向D1注入到間隙40中。本發明圖6-10所示的方式可以根據需要或製程要求自由選擇，提高了本發明的高散熱效率的半導體裝置的設計彈性。例如可以選擇虛設金屬部件的製造更加簡單，製造成本更低的方式。
請參考圖11，圖11為本發明另一實施例的PoP的剖面示意圖。如圖11所示，同樣地，PoP 2包括底部封裝10和堆疊在底部封裝10上的頂部封裝20。根據一個實施例，頂部封裝20可以是記憶體封裝，但不限於此。根據一個實施例，底部封裝10可以包括以倒裝晶片方式安裝在封裝基板100上的半導體晶片101。根據一個實施例，例如，封裝基板100可以包括三層或四層無芯嵌入式跡線基板(embedded trace substrate，ETS)，但不限於此。根據一個實施例，半導體晶片101例如邏輯晶片或系統單晶片可透過複數個連接元件112例如銅凸塊、柱或微凸塊電連接至封裝基板100，但連接元件不限於這些。
根據一個實施例，在封裝基板100的下表面上，可以提供複數個BGA焊球SB。例如，封裝基板100下表面的BGA焊球SB的間距可以等於或小於0.35mm，但不限於此。半導體晶片101可以由包覆件140（例如工程模塑料）封裝。
根據一個實施例，例如，頂部封裝20可以包括安裝在封裝基板200上的至少一個記憶體晶片201。根據一個實施例，例如，記憶體晶片201可以是HBM或LPDRAM晶片，但不限於此。根據一個實施例，例如，記憶體晶片201可以透過接合線203電連接到封裝基板200。記憶體晶片201、接合線203和封裝基板200的頂表面200a由包覆件240包覆或封裝。
根據一個實施例，頂部封裝20透過居間中介層30電連接到底部封裝10。根據一個實施例，例如，中介層30可以是兩層有芯基板，但不限於此。中介層30可以包括互連結構301，該互連結構301電連接到穿模通孔150，例如嵌入包塑件140中並設置在半導體晶片101的周邊周圍的銅柱。
根據一個實施例，頂部封裝20安裝在中介層30上並且透過複數個週邊焊球PSB電連接到中介層30。根據一個實施例，在頂部封裝20和中介層30之間形成小的間隙40。根據一個實施例，熱晶粒（thermal die）（例​​如虛設矽晶粒）50設置在中介層30上並且被週邊焊球PSB圍繞。熱晶粒50可以透過使用粘合層510粘附到中介層30的頂表面。根據一個實施例，熱晶粒50的高度小於週邊焊球PSB的高度，使得熱晶粒 50 不與封裝基板 200 的底表面 200b 直接接觸；熱晶粒50例如可以是矽晶粒或矽晶圓，熱晶粒50的導熱率要大於空氣，因此熱晶粒50可以將半導體晶片101的熱量更快傳導到外界，幫助半導體晶片101散熱，同時由於熱晶粒 50 不與封裝基板 200 的底表面 200b 直接接觸（例如兩者之間具有間隙），因此熱晶粒 50傳導的熱量並不會影響到頂部封裝20中記憶體晶片201的工作。在另一個實施例中，熱晶粒50的高度可以基本等於週邊焊球PSB的高度，使得熱晶粒 50 與封裝基板 200 的底表面 200b 直接接觸。在其他實施例中，熱晶粒 50 與封裝基板 200 的底表面 200b 之間可以透過熱界面材料或其他導熱材料間接接觸。熱晶粒 50 與封裝基板 200 的底表面 200b 直接或間接接觸時，熱晶粒50可以將半導體晶片101的熱量傳導到頂部封裝20，然後透過頂部封裝20將熱量散發到外界，這種方式可以在半導體晶片101是主要熱源而記憶體晶片201不是主要熱源時使用，從而幫助為主要熱源的半導體晶片101進行散熱。因此本發明可以針對不同的應用場景自由的選擇熱晶粒50與頂部封裝20接觸狀態，增加設計彈性。
根據一個實施例，熱晶粒50可以是電性浮置的，這意味著在熱晶粒50下方沒有形成用於將熱晶粒50電連接到中介層30中的任何其他互連結構的連接。使用散熱晶粒50來散發半導體晶片101產生的熱量，因為使用散熱晶粒50更具成本效益。此外本實施例中間隙40中可以設置一個或者複數個熱晶粒50；或者，在其他實施例中，可以使用複數個虛設金屬部件420與一個或者複數個熱晶粒50混合使用，這樣不僅可以使用熱晶粒進行散熱，還可以利用毛細效應將底部填料填充在間隙40內，從而進一步加快散熱，提高散熱效率。在一個實施例中，可以使用複數個熱晶粒50和複數個虛設金屬部件420在間隙40內交替佈置，形成虛設金屬部件420陣列與熱晶粒50交替的佈置形態。
儘管已經對本發明實施例及其優點進行了詳細說明，但應當理解的是，在不脫離本發明的精神以及申請專利範圍所定義的範圍內，可以對本發明進行各種改變、替換和變更。所描述的實施例在所有方面僅用於說明的目的而並非用於限制本發明。本發明的保護範圍當視所附的申請專利範圍所界定者為准。本領域技術人員皆在不脫離本發明之精神以及範圍內做些許更動與潤飾。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1,2:半導體裝置 10:底部封裝 20:頂部封裝 30:中介層 40:間隙 40c:中心區域 100,200:封裝基板 101:半導體晶片 112:連接元件 140,240:包塑件 150:穿模通孔 200b:底表面 201:記憶體晶片 203:接合線 301:互連結構 320:虛設焊盤 410:毛細管底部填料 420:虛設金屬部件 SB:BGA焊球 PSB:週邊焊球 510:熱晶粒
透過閱讀後續的詳細描述和實施例可以更全面地理解本發明，本實施例參照附圖給出，其中： 圖1是示出根據本發明的一個實施例的示例性PoP的示意性截面圖； 圖2是示出中介層上的虛設金屬部件的示例性佈局的透視頂視圖； 圖3是沿圖2中的線I-I’截取的剖視圖； 圖 4 至圖 10 示出了根據一些實施例的中介層上的虛設金屬部件的各種佈局，其中圖 7 是沿圖 6 中的線 II-II' 截取的截面圖，圖 9 是沿圖8中III-III'線截取的截面圖；以及 圖11是示出根據本發明另一實施例的示例性PoP的示意性截面圖。
1:半導體裝置
10:底部封裝
20:頂部封裝
30:中介層
40:間隙
40c:中心區域
100,200:封裝基板
101:半導體晶片
112:連接元件
140,240:包塑件
150:穿模通孔
200b:底表面
201:記憶體晶片
203:接合線
301:互連結構
320:虛設焊盤
410:毛細管底部填料
420:虛設金屬部件
SB:BGA焊球
PSB:週邊焊球

Claims (16)

  1. 一種半導體裝置，包括： 底部封裝； 頂部封裝，堆疊在該底部封裝上； 中介層，設置於該底部封裝與該頂部封裝之間，其中該頂部封裝透過週邊焊球電性連接至該中介層；以及 虛設金屬部件，設置在該中介層上並由週邊焊球圍繞，其中該虛設金屬部件形成在該中介層的相應的虛設焊盤上，其中該虛設金屬部件中的每一個的高度比該週邊焊球的高度小。
  2. 如請求項1之半導體裝置，還包括： 毛細管底部填料，設置在該中介層和該頂部封裝之間的間隙中。
  3. 如請求項2之半導體裝置，其中該毛細管底部填料圍繞並保護該週邊焊球，並且該毛細管底部填料與該虛設金屬部件直接接觸。
  4. 如請求項1之半導體裝置，其中該虛設金屬部件包括銅凸塊或銅柱；或者，該虛設金屬部件包括焊球。
  5. 如請求項1的半導體裝置，其中該頂部封裝是記憶體封裝，其中該記憶體封裝包括安裝在該頂部基板上的至少一個記憶體晶片。
  6. 如請求項5之半導體裝置，其中該記憶體晶片包括高頻寬記憶體晶片或低功率DRAM晶片。
  7. 如請求項5之半導體裝置，其中該記憶體晶片透過接合引線電連接到該頂部基板。
  8. 如請求項5之半導體裝置，其中該虛設金屬部件中的每一個不與該頂部基板的底表面直接接觸。
  9. 如請求項1之半導體裝置，其中該底部封裝包括以倒裝晶片方式安裝在該底部基板上的半導體晶片。
  10. 如請求項9之半導體裝置，其中該底部基板包括三層或四層無芯嵌入式走線基板。
  11. 如請求項9之半導體裝置，其中該半導體晶片包括邏輯晶粒或系統單晶片，並且該半導體晶片透過包覆件封裝。
  12. 如請求項9之半導體裝置，其中該中介層包括互連結構，該互連結構電連接到嵌入在該包覆件中並圍繞該半導體晶片的穿模通孔。
  13. 如請求項1的半導體裝置，其中至少部分該虛設焊盤電連接到該中介層中的接地跡線或接地結構。
  14. 一種半導體裝置，包括： 底部封裝； 頂部封裝，堆疊在該底部封裝上； 中介層，設置於該底部封裝與該頂部封裝之間，其中該頂部封裝透過週邊焊球電性連接至該中介層；以及 熱晶粒，設置在該中介層上並由該週邊焊球圍繞。
  15. 如請求項14之半導體裝置，其中透過使用粘合層將該熱晶粒粘合到該中介層的頂表面。
  16. 如請求項14之半導體裝置，其中該熱晶粒不與該頂部基板的底表面直接接觸。
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