TW202204072A - 批次處理爐及使用批次處理爐的方法 - Google Patents

批次處理爐及使用批次處理爐的方法 Download PDF

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TW202204072A
TW202204072A TW110105741A TW110105741A TW202204072A TW 202204072 A TW202204072 A TW 202204072A TW 110105741 A TW110105741 A TW 110105741A TW 110105741 A TW110105741 A TW 110105741A TW 202204072 A TW202204072 A TW 202204072A
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Taiwan
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wafers
chamber
reflow
batch
vertical furnace
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TW110105741A
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English (en)
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Ｍ 齊烏爾 卡里姆
蘭迪 霍爾
彼得 克羅托夫
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美商易爾德工程系統股份有限公司
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Publication of TW202204072A publication Critical patent/TW202204072A/zh

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    • H—ELECTRICITY
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0053—Soldering by means of radiant energy soldering by means of I.R.
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
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  • Electric Connection Of Electric Components To Printed Circuits (AREA)
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Abstract

本揭露是有關於一種在半導體晶圓裝配及封裝中的後段製程中使焊料凸塊回流的緊湊型垂直爐。本揭露闡述一種使用一批次中的多個晶圓的垂直爐，其中控制還原劑的注入，以使得製程在很大程度上不受污染。本揭露闡述在次大氣壓環境中使用層流技術控制甲酸流過垂直系統，此技術當前在行業中尚未使用。製程的效果取決於有效的甲酸蒸氣遞送、在加熱及冷卻期間的綜合溫度控制以及對具有排氣口的蒸氣流動路徑的精心設計。藉由蒸氣遞送製程、兩步式溫度斜坡控制及受控冷卻製程以及甲酸含量管理的區域相依反應動力確保在沒有任何焊劑的情況下發生有效反應。

Description

焊料回流爐中垂直批次處理方法以及裝置
本揭露大體而言是有關於積體電路的異質整合、裝配及封裝，且確切而言是有關於無焊劑焊料回流製程及工具，尤其是在晶圓的垂直批次處理中的無焊劑焊料回流製程及工具。
半導體晶圓封裝涉及許多複雜的工具及程序。先前提出申請的專利/已公開的專利申請案（例如US 4,597,736（「用於加熱半導體晶圓的方法及裝置」）、US 6,198,075（「迅速加熱及冷卻真空爐」）、US 10,147,617（「迅速處理聚合物層以支援包括高效烘乾前驅物層在內的亞胺化製程及扇出型晶圓級封裝的方法」）、US 10,490,431（「組合式真空與超壓製程腔室以及其相關方法」）、US 2019/0314738（「將聚合物蒸氣捕獲於製程爐真空系統中的捕獲總成及系統」）及US 2020/0013591（「電漿擴散裝置及系統以及用於使電漿在製程爐中擴散的方法」））中已揭露了工具及製程中的一些工具及製程。
回流焊接是如下一種製程：在電子電路中使用焊料膏將一個實體組件附接至另一實體組件，此後使整個總成經受受控加熱以使得所述組件之間永久接合。傳統焊料回流爐具有在水平方向上依次轉移晶圓的水平配置。當在先進封裝應用中執行無焊劑焊料回流時，此會引入很多複雜因素，例如熱量分佈不均、污染及生產量較低。另外，傳統水平焊料回流爐具有大的佔地面積及晶圓至晶圓的變化。
使用多個晶圓的垂直爐具有佔地面積較低、生產量較高且溫度控制良好的優點。需要修改現有的垂直爐，以使無焊劑焊料回流製程適合於允許對具有表面氧化物（其用於將焊料高品質潤濕至金屬）的金屬部件進行焊接以得到無空隙焊料接頭。
以下是本揭露的簡化發明內容以提供對本揭露的一些態樣的基本理解。此發明內容不是對本揭露的廣泛概述。其不旨在識別本揭露的關鍵或重要元件，亦不旨在闡明本揭露的特定實施方案的任何範疇或申請專利範圍的任何範疇。其唯一目的是以簡化形式呈現本揭露的一些概念，以作為後文所呈現的更詳細說明的序言。
本揭露的態樣闡述在垂直爐之內對上面具有焊料凸塊的一批晶圓執行無焊劑焊料回流製程的方法及系統。所述垂直爐包括：回流腔室，所述回流腔室之內裝載有所述一批晶圓，所述回流腔室容納多個晶圓支撐板，每一晶圓支撐板以非接觸方式固持所述一批晶圓中的相應晶圓。所述垂直爐亦包括：第一埠，用於在裝載所述一批晶圓並將所述回流腔室與大氣密封隔絕之後使所述回流腔室達到真空水準或接近真空水準；第二埠，用於在所述回流腔室降低至所述真空水準或所述接近真空水準之後將非反應性氣體引入至所述回流腔室中，其中所述非反應性氣體使所述回流腔室達到為所述無焊劑焊料回流製程定製的預定次大氣壓；以及第三埠，用於將還原劑注入至所述回流腔室中，其中所述回流腔室之內的所述還原劑的預定層流有助於進行所述無焊劑焊料回流製程。此外，所述垂直爐包括：溫度控制機構，用於在所述一批晶圓中的所有晶圓上均勻地出現溫度受控斜升以進行焊料回流，且在已進行所述焊料回流之後在所述一批晶圓中的所有晶圓上均勻地出現溫度受控斜降。
在一個實施例中，所述溫度控制機構可基於高溫熱轉移流體流。在另一實施例中，所述溫度控制機構可基於具有獨立區域控制能力的特殊設計的紅外線加熱器。
亦主張在特殊設計的垂直爐中有效地執行焊料回流製程的對應方法。
本揭露的態樣是有關於緊湊型垂直爐，所述緊湊型垂直爐用於在半導體晶圓裝配及封裝中的後段製程中使焊料凸塊回流以得到無空隙焊料接頭。後段製程包括但不限於在物理氣相沈積（physical vapor deposition，PVD）金屬化之前的晶圓至晶圓互連接合件的退火及除氣/烘烤，可能亦擴展到在囊括金屬對聚合物晶圓接合的異質整合中進行底部填充及環境模製固化/退火。儘管闡述了將甲酸作為用於無焊劑焊接的還原劑的說明性實例，但只要是以流體（氣體/液體）形式引入所述還原劑，則即使使用其他還原劑，本文中所述的系統及方法亦是有效的。還原劑亦可被稱為製程氣體。此外，焊料的材料可能會變化，但爐是通用的因而足以處置不同類型的焊料。大多數焊料是不含鉛的。無焊劑製程常用錫（Sn）系焊料，且錫系焊料的實例是金錫（AuSn）焊料。
如先前技術章節中所提及，傳統焊料回流爐具有在水平方向上進行晶圓轉移的既定甲酸（或其他還原劑）回流製程。此種製程具有明顯的缺陷，例如佔地面積極大、能量消耗高、污染過多及生產量較低。
本揭露旨在藉由設計使用一批次中的多個晶圓（例如，示例性值是50到100個晶圓）的垂直爐來解決該些問題，其中控制還原劑（例如甲酸）的注入，以使得製程在很大程度上不受污染。
本揭露闡述在次大氣壓環境中使用層流技術控制甲酸流過垂直系統，此技術當前在行業中尚未使用。製程的效果取決於有效的甲酸蒸氣遞送、在加熱及冷卻期間的綜合溫度控制以及對具有排氣口的蒸氣流動路徑的精心設計。藉由蒸氣遞送製程、兩步式溫度斜坡控制及受控冷卻製程以及甲酸含量管理的區域相依反應動力確保在沒有任何焊劑的情況下發生有效反應。
熟習此項技術者鑒於當前的說明書將理解，焊料回流爐具有許多可能的配置以達成有效垂直批次處理的上述目標。下文較詳細地闡述可能實施例中的兩者，但其他修改方案處於本揭露的範疇內。示例性實施例 #1 ：使用高溫熱轉移流體（ HTF ）對面板進行加熱及冷卻
如圖1中所示，圖「A」示出裝載有呈垂直配置的晶圓/晶圓固持面板（101）的堆疊的盒體100。晶圓的數目可基於盒體的容量是任何任意數目。在圖「B」中，示出回流腔室103。回流腔室103中內置有加熱/冷卻板102的堆疊。加熱/冷卻板102的數目大於或等於面板101的數目。腔室103亦具有真空埠（104）、酸埠（105）及氣體埠（106）。舉例而言，當達到某一溫度水準及真空水準時，經由埠105注入甲酸。可在真空中或在非反應性氣體環境（例如氦氣、氮氣、氬氣、氫氣等）中進行受控速率加熱。圖「C」示出將裝載有晶圓101的盒體插入於回流腔室103內，以使得每一晶圓/面板（101）與其在腔室103內的對應加熱/冷卻板102相鄰。圖「D」示出受控速率冷卻。可選地，可將冷卻氣流107引入於腔室103中。冷卻氣流可使用強制性對流或其他方法。圖「E」示出在回流製程完成之後自腔室103取出盒體100。
可將盒體100裝載於腔室103中，可在裝載之後封閉/密封腔室103的門（未示出）且達成真空條件（或將非反應性氣體注入於腔室中）。作為另外一種選擇，可藉由機器人形式將晶圓/面板101裝載於腔室齒條上。電性連接（未示出）能夠安裝熱電偶。腔室亦具有外壁加熱器/內壁加熱器以將壁保持於某一溫度下，以在對晶圓/面板進行加熱時減少自晶圓/面板的側面區至壁的熱量損耗。此會減小晶圓/面板的溫度不均勻性。
在腔室103內，加熱/冷卻板102可具有預定垂直間隔（例如，15毫米至50毫米）。盒體100所盛放的晶圓/面板101與加熱/冷卻板102平行且相鄰，並且與所述板保持某一距離以防止形成可能在晶圓/面板101因翹曲而觸及加熱/冷卻板102時所造成的灼熱區域/冷區域。
圖2示出圖1中所示的加熱/冷卻板堆疊中的單個加熱/冷卻板102，以示出每一加熱/冷卻板102之內具有內置通道202，其中灼熱/冷流體在內置通道202的一端210處進入且灼熱/冷流體在內置通道202的另一端212處離開。灼熱/冷流體可以是流過通道以達到加熱/冷卻目的的熱轉移流體（HTF），例如合成油、熱傳導液（Galden）等。腔室可保持於真空下或使用其他非反應性氣體（例如氮氣、氦氣、氬氣等）將所述腔室填充至某一壓力，以改良加熱/冷卻板102與晶圓/面板101之間的熱量轉移。腔室之內可具有氣體歧管，以使冷氣體或已加熱的氣體在晶圓/面板101上流動以藉由引入強制性對流來加速加熱/冷卻，及/或以有助於改良晶圓/面板101上可能由晶圓/面板翹曲或任何其他原因所導致的溫度均勻性。
將灼熱的熱量轉移流體泵送通過加熱/冷卻板以起始藉由輻射對晶圓/面板進行加熱，及/或若腔室之內具有氣體則亦藉由熱對流轉移機制及熱傳導轉移機制對晶圓/面板進行加熱。可調整HTF的溫度及流動速率以控制面板/晶圓的受熱速率，或在製程需要時停止加熱。兩個三通閥206及207（或有助於維持所需的流體溫度的任何其他硬體）可在通過通道202的冷流體與灼熱流體之間切換。冷流體/灼熱流體來自兩區域式HTF熱量交換器203的兩個區域205及204。作為另外一種選擇，203可以是兩個熱量交換器的組合，而非單個兩區域式熱量交換器。在又一替代方案中，203可以是具有灼熱HTF的熱量交換器且耦合至使冷流體或溫熱流體（30攝氏度至45攝氏度是典型溫度，但其他範圍是可能的）再循環的製冷機。一般而言，用語「熱量交換器203」囊括所有的該些配置。
每一加熱/冷卻板102具有使灼熱HTF及冷HTF單獨流過同一板的兩個獨立通路。此在圖3A及圖3B（分別是縱向剖視圖及俯視圖）中更詳細地示出。
加熱/冷卻板的液體入口連接至熱量交換器203。可藉由使HTF的一部分繞回至熱量交換器203來調整通過冷卻/加熱板的所述流體的流動速率。可藉由混合灼熱HTF與冷HTF或藉由將灼熱HTF及冷HTF以不同的流動速率同時泵送通過加熱/冷卻板來達成維持加熱/冷卻板102的所需溫度，從而維持所期望溫度。
加熱/冷卻板102可以是任何形狀且由任何適合的材料製成，只要所述材料具有良好的熱量轉移係數及適當放射率以經由輻射更好地轉移熱量即可。
加熱/冷卻板102可具有帶紋理表面或擠壓型表面以增大表面積從而改良熱量轉移。板的表面可具有塗層以防止板材料受到製程氣體（即，可導致顆粒產生及板損壞的甲酸）的化學侵蝕。
加熱/冷卻板的內部通道可以是任何形狀及任何大小以將熱量轉移及晶圓/面板均勻受熱最佳化，此將使得面板/晶圓的加熱/冷卻斜坡速率是快速且受控的。圖3A及圖3B中示出板的設計方案中的一者。板具有用於灼熱HTF及冷HTF的許多通道。以302示出灼熱流體通道，且以303示出冷流體通道。灼熱流體通道與冷流體通道之間存在間隔。作為另外一種選擇，加熱/冷卻板102可具有用於由熱量交換器203供應的灼熱HTF及冷HTF兩者的單組通道。
在又一替代實施例中，用於HTF的加熱/冷卻板可由例如僅用於加熱的陶瓷電阻加熱元件取代。在此種情形中，可藉由使氣體在面板上流動來進行冷卻。
可藉由任何已知的方法監測晶圓/面板101的溫度，且當溫度達到所需值（例如，150攝氏度至180攝氏度）時，可將製程氣體（例如，甲酸）注入於腔室103之內以由晶圓/面板吸收從而移除氧化物。在此時，可將對晶圓/面板的加熱速率減小至某一值（甚至可減小至零）以控制涉及所述製程氣體的化學反應。
在某一時間（例如，～80秒）之後，可重新開始高速率加熱以達到回流製程所需的溫度（例如，232攝氏度至265攝氏度）。
在某一時間處，停止灼熱HTF流且冷HTF開始流過加熱/冷卻板102從而以受控速率對面板進行冷卻。在此階段處，晶圓/面板101將能量輻射回至冷的加熱/冷卻板102。
在冷卻循環期間，可將處於某一壓力下的氣體引入至腔室中以加速冷卻，及/或減小晶圓/面板之中的溫度不均勻性。在期望時，腔室可具有氣體歧管以使氣體在晶圓/面板上流動以藉由強制性對流來加速冷卻。就回流製程而言，任何氣體（除如氧氣等反應性氣體以外）可用於冷卻目的。為減少氣體消耗，可使氣體再循環通過製冷機或冷卻塔。
在晶圓/面板溫度低於某一值（例如，82攝氏度）之後，可將腔室通向大氣，且可自腔室移除具有晶圓/面板的盒體。
為增大生產量，可在晶圓/面板仍灼熱時自腔室移除具有所述晶圓/面板的盒體，且當所述晶圓/面板可安全地暴露於大氣並可自模組移除時放至非反應性氣體（例如，N2）環境中的緩衝站中以完成至一定溫度的冷卻。此硬體可連接至設備前端模組（equipment front end module，EFEM）以裝載/卸載前開式晶圓傳送盒（front-opening unified pod，FOUP）。
圖4示出典型焊料回流製程的時間對溫度輪廓，其中在回流時間內（自t3至t4）液相溫度介於T4與T5之間。本揭露的垂直腔室的設計使得可準確地控制此曲線圖的溫度斜坡。
所提出概念的主要優點中的一些優點包括但不限於：在單個腔室中進行加熱及冷卻操作以執行回流製程；以及晶圓/面板平行於加熱/冷卻板，從而使得藉由輻射/對流來極高效地轉移熱量且使得晶圓/面板的溫度不均勻性減小。
單個製程腔室能使得系統的佔地面積減小、硬體成本降低、複雜性減小且可靠性增大，並且可幾乎立刻改變加熱及冷卻的斜坡速率以符合回流製程要求。此是優於當前最先進的傳統回流爐的巨大改良，當前最先進的傳統回流爐包括用於進行不同處理階段的多個腔室（高達12個），且因此佔據大量的工廠/晶圓廠樓面空間，但生產量卻低於本文所揭露的回流爐可達成的生產量。方法及裝置 #2 ：使用紅外線輻射加熱器進行面板加熱且在單獨區域中進行冷卻
垂直爐的替代設計具有用於對晶圓/面板進行加熱及冷卻的兩個單獨區域。如圖5A中所示，將晶圓/面板裝載於盒體100（類似於圖1中所述的盒體）上，且將盒體100移動至框架526之內的密封殼體520中。密封殼體520可具有氣體歧管522，以用於在進行盒體冷卻之前使氧氣氣體流動以清洗殼體。盒體100可具有位於晶圓/面板之間以達成均勻加熱的承熱器。使用門搬運總成528將密封殼體520中的裝載有晶圓/面板的盒體搬運至回流腔室103（類似於圖1中所示的回流腔室103）中。
回流腔室103包括石英管514、頂板510、底板516且具有冷卻通道508（例如，以保護O形環且防止部件被過加熱）及溫度量測器件（未示出）。
如俯視圖（圖6的圖A）中所示，在腔室103的壁周圍存在紅外線（IR）輻射加熱結構512，所述紅外線輻射加熱結構512用於以受控方式對晶圓/面板101進行加熱。圖6中示出IR加熱器的數目是四個，但IR加熱器的數目可以是任何任意數目。俯視圖（圖6的圖A）中所示的加熱器距面板101的邊緣的距離「d」及加熱器的寬度「w」以及側視圖（圖6的圖B）中所示的加熱器的高度「h」是可變化的設計參數。每一加熱器可具有獨立受控區域（例如，圖6的圖「C」中所示的區域1、2、3）以用於改良晶圓/面板的溫度均勻性。門536處於靠上位置（圖5A）或靠下位置（圖5B）中取決於盒體100是位於回流腔室103中還是位於冷卻腔室520中。
將回流腔室103密封並抽空以移除晶圓/面板上的水蒸氣。此可花費多個循環。可將N2或其他氣體泵送至腔室中以幫助移除蒸氣。可需要多個循環。將監測O2水準以驗證是否達成恰當的O2水準。可將N2預加熱以加速蒸氣移除過程。腔室可填充有氣體以改良面板/晶圓的溫度均勻性。
將輻射加熱器512設定至目標溫度，且開始以受控加熱速率對晶圓/面板進行加熱。在必要時，可暫停加熱以等到面板/晶圓處於製程所需的所期望溫度範圍內為止。
在回流製程完成之後，關斷加熱器512（如圖5B中所示），對腔室103進行通風且將盒體100向下移動至氣密性殼體520內具有N2環境的區530中。
使流入的N2氣體524以受控方式在晶圓/面板上流動來對晶圓/面板進行冷卻。可使流出的N2氣體534再循環通過製冷機或排放至大氣（使用放氣閥532）。亦可使用其他非反應性氣體（例如Ar）來代替N2。密封殼體520可具有N2收集器518，且可選地具有用於對殼體520的壁進行冷卻的風扇538。在冷卻完成之後，自殼體520卸載盒體100且裝載新的盒體以重複焊料回流製程。
當前設計及方法的優點包括但不限於：將加熱區域及冷卻區域分離，以使得加熱速率及冷卻速率是高的；及經由紅外線加熱器更好地控制溫度（例如，可接通/關斷IR加熱器，或根據製程要求將IR加熱器幾乎立刻設定至所期望溫度）。
注意，儘管具有單獨的加熱區域及冷卻區域的此設計的總體積大於圖2中所示的第一實施例，但佔地面積仍是小的，原因在於此設計仍是垂直配置而不是水平配置，且可容易達成圖4中所示的受控輪廓。兩種設計的最大優點是達成比使用水平常壓熔爐或甚至當前可用的垂直熔爐的當前最先進設計明顯更大（例如，十倍或大於十倍）的斜坡速率及控制。
在前述說明書中，已參考本揭露的具體示例性實施方案闡述了本揭露的實施方案。將明瞭，可對本揭露做出各種修改，而此並不背離以下申請專利範圍中所陳述的本揭露實施方案的較寬廣精神及範疇。因此，說明書及圖式應被視為具有說明意義而非限制意義。另外，例如「頂部」、「底部」等方向性用語不將本揭露的範疇限制於任何固定定向，而是囊括定向的各種排列及組合。
1、2、3、204、205:區域 100:盒體 101:面板/晶圓 102:加熱/冷卻板 103:回流腔室/腔室 104:真空埠 105:酸埠/埠 106:氣體埠 107:冷卻氣流 202:內置通道/通道 203:兩區域式高溫熱轉移流體（HTF）熱量交換器/熱量交換器 206、207:三通閥 210、212:端 302:灼熱流體通道 303:冷流體通道 508:冷卻通道 510:頂板 512:紅外線（IR）輻射加熱結構/輻射加熱器/加熱器 514:石英管 516:底板 518:N2收集器 520:密封殼體/殼體/氣密性殼體 522:氣體歧管 523:氣體 524:流入的N2氣體 526:框架 528:門搬運總成 530:區 532:放氣閥 534:流出的N2氣體 536:門 538:風扇 A、B、C、D、E:圖 d:距離 h:高度 T4、T5:液相溫度 t3、t4:時間 w:寬度
閱讀下文給出的詳細說明及本揭露的各種實施方案的附圖，將更充分地理解本揭露。請注意，圖中所示的尺寸僅出於說明目的，並不是按比例繪製。
圖1說明根據本揭露實施例在垂直爐中的回流腔室中處理一批晶圓的步驟。
圖2說明根據本揭露的第一實施例的使用高溫熱轉移流體（high temperature thermal transfer fluid，HTF）來對晶圓/面板進行加熱及冷卻的概念。
圖3A及圖3B分別說明根據本揭露的第一實施例的加熱/冷卻板的縱向剖視圖及俯視圖。
圖4說明示出根據本揭露實施例的無焊劑焊料回流製程的示意性曲線圖。
圖5A及圖5B分別說明根據本揭露的第二實施例的使用紅外線（infra-red，IR）輻射對面板進行加熱並在腔室內的單獨區域中對面板進行冷卻的概念。
圖6示意性地說明根據本揭露的第二實施例的位於加熱腔室周圍的IR加熱器佈置的不同視圖。
100:盒體
101:面板/晶圓
102:加熱/冷卻板
103:回流腔室/腔室
104:真空埠
105:酸埠/埠
106:氣體埠
107:冷卻氣流
A、B、C、D、E:圖

Claims (20)

  1. 一種對上面具有焊料凸塊的一批晶圓執行無焊劑焊料回流製程的垂直爐，所述垂直爐包括： 回流腔室，所述回流腔室之內裝載有所述一批晶圓，所述回流腔室容納多個晶圓支撐板，所述多個晶圓支撐板中的每一晶圓支撐板以非接觸方式固持所述一批晶圓中的相應晶圓； 第一埠，用於在裝載所述一批晶圓並將所述回流腔室與大氣密封隔絕之後使所述回流腔室達到真空水準或接近真空水準； 第二埠，用於在所述回流腔室降低至所述真空水準或所述接近真空水準之後將非反應性氣體引入至所述回流腔室中，其中所述非反應性氣體使所述回流腔室達到為所述無焊劑焊料回流製程定製的預定次大氣壓； 第三埠，用於將還原劑注入至所述回流腔室中，其中所述回流腔室之內的所述還原劑的預定層流有助於進行所述無焊劑焊料回流製程； 溫度控制機構，用於在所述一批晶圓中的所有晶圓上均勻地出現溫度受控斜升以進行所述焊料回流，且在已進行所述焊料回流之後在所述一批晶圓中的所有晶圓上均勻地出現溫度受控斜降。
  2. 如請求項1所述的垂直爐，其中所述還原劑是呈流體形式的甲酸。
  3. 如請求項2所述的垂直爐，其中藉由在甲酸蒸氣遞送系統與排氣系統之間設計流動路徑來達成所述預定層流，其中所述流動路徑包括與裝載於所述回流腔室之內的所述一批晶圓的均勻流體接觸。
  4. 如請求項1所述的垂直爐，其中所述溫度控制機構包括加熱機構及冷卻機構，所述加熱機構及所述冷卻機構兩者皆容納於所述回流腔室中。
  5. 如請求項1所述的垂直爐，其中所述溫度控制機構包括通過第一組通路的灼熱熱轉移流體流，所述第一組通路設立至以所述非接觸方式固持所述一批晶圓中的相應晶圓的所述多個晶圓支撐板中的每一晶圓支撐板中所包括的相應通道中。
  6. 如請求項5所述的垂直爐，其中所述溫度控制機構包括通過第二組通路的冷熱轉移流體流，所述第二組通路設立至以所述非接觸方式固持所述一批晶圓中的所述相應晶圓的所述多個晶圓支撐板中的每一晶圓支撐板中所包括的所述相應通道中。
  7. 如請求項6所述的垂直爐，其中所述第一組通路及所述第二組通路兩者皆容納於所述多個晶圓支撐板中的每一晶圓支撐板中所包括的所述相應通道內，但所述第一組通路中的流體流獨立於所述第二組通路中的流體流。
  8. 如請求項1所述的垂直爐，其中所述溫度控制機構包括容納於所述回流腔室中的加熱機構及容納於第二腔室中的冷卻機構，所述第二腔室與所述回流腔室分離且相異。
  9. 如請求項8所述的垂直爐，其中容納於所述回流腔室中的所述加熱機構包括多個紅外線加熱器，所述多個紅外線加熱器沿著所述回流腔室的壁設置於距所述一批晶圓中的個別晶圓的邊緣預定距離處。
  10. 如請求項9所述的垂直爐，其中所述多個紅外線加熱器中的每一者被劃分成多個加熱區域，以在所述回流製程期間細微地控制所述一批晶圓上的溫度均勻性。
  11. 如請求項8所述的垂直爐，其中所述回流腔室與所述第二腔室被設置成相對於彼此垂直。
  12. 如請求項8所述的垂直爐，其中所述第二腔室中的所述冷卻機構包括非反應性流體的強制性對流，其中所述非反應性流體的流動路徑包括與裝載於所述第二腔室之內的所述一批晶圓的均勻流體接觸。
  13. 一種在垂直爐之內對上面具有焊料凸塊的一批晶圓執行無焊劑焊料回流製程的方法，所述方法包括： 將一批晶圓裝載於所述垂直爐的回流腔室之內，所述回流腔室容納多個晶圓支撐板，所述多個晶圓支撐板中的每一晶圓支撐板以非接觸方式固持所述一批晶圓中的相應晶圓； 在裝載所述一批晶圓並將所述回流腔室與大氣密封隔絕之後，使所述回流腔室達到真空水準或接近真空水準； 在使所述回流腔室降低至所述真空水準或所述接近真空水準之後，將非反應性氣體引入至所述回流腔室中，其中所述非反應性氣體使所述回流腔室達到為所述無焊劑焊料回流製程定製的預定次大氣壓； 將還原劑注入至所述回流腔室中，其中所述回流腔室之內的所述還原劑的預定層流有助於進行所述無焊劑焊料回流製程； 在所述一批晶圓中的所有晶圓上均勻地執行溫度受控斜升以進行所述焊料回流，且在已進行所述焊料回流之後在所述一批晶圓中的所有晶圓上均勻地執行溫度受控斜降，其中藉由所述垂直爐中所包括的溫度控制機構達成所述溫度受控斜升及所述溫度受控斜降。
  14. 如請求項13所述的方法，其中所述還原劑是甲酸蒸氣，其中藉由在蒸氣遞送系統與排氣系統之間設計流動路徑達成所述甲酸蒸氣的所述預定層流，其中所述流動路徑包括與裝載於所述回流腔室之內的所述一批晶圓的均勻流體接觸。
  15. 如請求項13所述的方法，其中所述溫度控制機構包括加熱機構及冷卻機構，所述加熱機構及所述冷卻機構兩者皆容納於所述回流腔室中。
  16. 如請求項13所述的方法，其中所述溫度控制機構包括通過第一組通路的灼熱熱轉移流體流，所述第一組通路設立至以所述非接觸方式固持所述一批晶圓中的相應晶圓的所述多個晶圓支撐板中的每一晶圓支撐板中所包括的相應通道中。
  17. 如請求項16所述的方法，其中所述溫度控制機構包括通過第二組通路的冷熱轉移流體流，所述第二組通路設立至以所述非接觸方式固持所述一批晶圓中的所述相應晶圓的所述多個晶圓支撐板中的每一晶圓支撐板中所包括的所述相應通道中。
  18. 如請求項13所述的方法，其中所述溫度控制機構包括容納於所述回流腔室中的加熱機構及容納於第二腔室中的冷卻機構，所述第二腔室與所述回流腔室分離且相異，且其中所述回流腔室與所述第二腔室被設置成相對於彼此垂直。
  19. 如請求項18所述的方法，其中容納於所述回流腔室中的所述加熱機構包括多個紅外線加熱器，所述多個紅外線加熱器沿著所述回流腔室的壁設置於距所述一批晶圓中的個別晶圓的邊緣預定距離處。
  20. 如請求項19所述的方法，其中所述多個紅外線加熱器中的每一者被劃分成多個加熱區域，以在所述回流製程期間細微地控制所述一批晶圓上的溫度均勻性。
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CN116313946B (zh) * 2023-05-24 2023-10-17 长鑫存储技术有限公司 温度调节系统及调节方法

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