TW202146711A - Roughened copper foil, carrier-attached copper foil, copper clad laminate plate, and printed wiring board - Google Patents

Roughened copper foil, carrier-attached copper foil, copper clad laminate plate, and printed wiring board Download PDF

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TW202146711A
TW202146711A TW110103172A TW110103172A TW202146711A TW 202146711 A TW202146711 A TW 202146711A TW 110103172 A TW110103172 A TW 110103172A TW 110103172 A TW110103172 A TW 110103172A TW 202146711 A TW202146711 A TW 202146711A
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copper foil
roughened
carrier
less
filter
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TWI756039B (en
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細川眞
髙梨哲聡
溝口美智
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日商三井金屬鑛業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/16Electroplating with layers of varying thickness
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2222/00Aspects relating to chemical surface treatment of metallic material by reaction of the surface with a reactive medium
    • C23C2222/20Use of solutions containing silanes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Provided is a roughened copper foil which can achieve both of excellent etching properties and high share strength in the processing of a copper clad laminate plate or the manufacture of a printed wiring board. The roughened copper foil has a roughened surface on at least one side thereof. In the roughened surface, the interface developed area ratio Sdr is 3.50% to 12.00% inclusive as measured in accordance with ISO25178 under the conditions including an S filter cut-off wavelength of 0.55 [mu]m and an L filter cut-off wavelength of 10 [mu]m. In the roughened copper foil, the core part level difference Sk is 0.15 [mu]m to 0.35 [mu]m inclusive as measured in accordance with ISO25178 under the conditions including an S filter cut-off wavelength of 0.55 [mu]m and an L filter cut-off wavelength of 10 [mu]m.

Description

粗糙化處理銅箔、附有載體銅箔、覆銅層壓板及印刷配線板Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board

本發明係有關粗糙化處理銅箔、附有載體銅箔、覆銅層壓板及印刷配線板。The present invention relates to a roughened copper foil, a copper foil with a carrier, a copper-clad laminate and a printed wiring board.

近年以來,做為適用於電路之微細化之印刷配線板之製造工法,MSAP(改良型半加成)法被廣為採用。MSAP法係適用於形成極為微細之電路的手法,為了活化該特徵,使用附有載體銅箔加以進行。例如,如圖1及2所示,將極薄銅箔10,於基底基材11a上,在具備下層電路11b之絕緣樹脂基板11上,使用預浸體12與塗裝層13,加壓密接(工程(a)),剝去載體(未圖示)後,依需要經由雷射穿孔,形成貫穿孔14(工程(b))。接著,施以化學鍍銅15(工程(c))之後,經由使用乾式薄膜16之曝光及顯影,以特定之圖案遮蔽(工程(d)),施以電性鍍銅17(工程(e))。除去乾式薄膜16,形成配線部分17a之後(工程(f)),將相互鄰接之配線部分17a與17a間之不需極薄銅箔等,遍及於此等之厚度整體,經由蝕刻除去(工程(g)),得以特定之圖案形成之配線18。在此,欲提升電路-基板間之物理性密合性,於極薄銅箔10之表面,一般進行粗糙化處理。In recent years, the MSAP (modified semi-additive) method has been widely used as a manufacturing method of printed wiring boards suitable for miniaturization of circuits. The MSAP method is a method suitable for forming extremely fine circuits, and in order to activate this feature, it is performed using copper foil with a carrier. For example, as shown in FIGS. 1 and 2 , an ultra-thin copper foil 10 is press-adhered on a base substrate 11 a and an insulating resin substrate 11 having an underlying circuit 11 b using a prepreg 12 and a coating layer 13 . (Process (a)), after peeling off the carrier (not shown), through laser perforation as required, through holes 14 are formed (process (b)). Next, after applying electroless copper plating 15 (process (c)), through exposure and development using dry film 16 , masking with a specific pattern (process (d)), and applying electroless copper plating 17 (process (e) ). After removing the dry film 16 and forming the wiring portion 17a (process (f)), the unnecessary ultra-thin copper foil, etc., between the adjacent wiring portions 17a and 17a is removed by etching over the entire thickness of these (process (process (process)). g)), the wiring 18 can be formed in a specific pattern. Here, in order to improve the physical adhesion between the circuit and the substrate, the surface of the ultra-thin copper foil 10 is generally roughened.

做為進行如此粗糙化處理之銅箔,例如於專利文獻1(日本特許第6462961號公報),揭示於銅箔之至少單面,粗糙化處理層、防鏽處理層及矽烷耦合層則以此順序層積之表面處理銅箔。於專利文獻1中,揭示傳送損失少,具有優異迴焊耐熱性之印刷配線板之製造為目的,從相關表面處理銅箔之矽烷耦合層之表面測定之界面之展開面積比Sdr為8%以上140%以下,二次方平均平方根表面斜率Sdq為25°以上70°以下,以及表面性狀之縱橫比Str為0.25以上0.79以下。As a copper foil subjected to such a roughening treatment, for example, in Patent Document 1 (Japanese Patent No. 6462961), it is disclosed on at least one side of the copper foil, and the roughening treatment layer, the antirust treatment layer and the silane coupling layer are based on this. Sequentially laminated surface-treated copper foil. In Patent Document 1, it is disclosed that the developed area ratio Sdr of the interface measured from the surface of the silane coupling layer of the relevant surface-treated copper foil is 8% or more for the purpose of producing a printed wiring board with excellent reflow heat resistance and less transmission loss. 140% or less, the quadratic mean square root surface slope Sdq is 25° or more and 70° or less, and the aspect ratio Str of the surface properties is 0.25 or more and 0.79 or less.

實際上,提案有數個MSAP法等所進行之微細電路形成性優異之附有載體銅箔。例如,於專利文獻2(國際公開第2016/117587號)中,揭示具備剝離層側之面之表面尖峰間平均距離為20μm以下,且剝離層與相反側之面之波動之最大高低差為1.0μm以下之極薄銅箔的附有載體銅箔,根據相關形態時,可兼顧微細電路形成性及雷射加工性。又,於專利文獻3(日本特開2018-26590號公報),揭示提升微細電路形成性為目的,依據極薄銅層側表面之ISO25178之最大峰高度Sp與突出峰部高度Spk之比Sp/Spk為3.271以上10.739以下之附有載體銅箔。 [先前技術文獻] [專利文獻]In fact, several copper foils with a carrier that are excellent in fine circuit formability by the MSAP method or the like have been proposed. For example, in Patent Document 2 (International Publication No. 2016/117587), it is disclosed that the average distance between the surface peaks of the surface having the peeling layer side is 20 μm or less, and that the maximum height difference of the fluctuation between the peeling layer and the surface on the opposite side is 1.0 The copper foil with a carrier of the ultra-thin copper foil of μm or less can achieve both the fine circuit formability and the laser processability according to the relevant form. In addition, in Patent Document 3 (Japanese Patent Laid-Open No. 2018-26590), it is disclosed that the ratio Sp/ Copper foil with carrier with Spk of 3.271 or more and 10.739 or less. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本特許第6462961號公報 [專利文獻2]國際公開第2016/117587號 [專利文獻3]日本特開2018-26590號公報[Patent Document 1] Japanese Patent No. 6462961 [Patent Document 2] International Publication No. 2016/117587 [Patent Document 3] Japanese Patent Laid-Open No. 2018-26590

近年以來,經由上述MSAP法等,為了形成更為微細之電路,對於銅箔而言,求得更為平滑化及粗糙化粒子之微小化。但是,經由銅箔之平滑化及粗糙化粒子之微小化,雖可提升關於電路之微細化之銅箔之蝕刻性,但銅箔與基板樹脂等之物理性密接力則變得低下。尤其,伴隨電路之細線化,於印刷配線板之安裝工程中,藉由在於電路施加從橫方向之物理性應力(即剪應力),電路易被剝落,使得產率下降之課題變得明顯化。此點,對於電路與基板之物理密接指標之一個,有剪切強度(Share strength),為了有效迥避上述電路之剝落,需要將剪切強度保持在一定以上。但是,為了確保一定以上之剪切強度,不得不使銅箔之粗糙化粒子變大,會有難以達成與蝕刻性兼顧之問題。In recent years, in order to form a finer circuit by the above-mentioned MSAP method, etc., in copper foil, it is calculated|required to make it smoother and the miniaturization of roughening particle|grains more. However, by smoothing the copper foil and miniaturizing the roughened particles, the etching properties of the copper foil regarding the miniaturization of the circuit can be improved, but the physical adhesion between the copper foil and the substrate resin and the like is lowered. In particular, with the thinning of the circuit, in the installation process of the printed wiring board, the circuit is easily peeled off by applying a physical stress (ie, shear stress) from the lateral direction to the circuit, and the problem of the decrease in productivity has become obvious. . At this point, one of the physical adhesion indexes between the circuit and the substrate is the shear strength (Share strength). In order to effectively avoid the peeling of the circuit, the shear strength needs to be kept above a certain level. However, in order to ensure the shear strength above a certain level, the roughening particles of the copper foil have to be increased, and there is a problem that it is difficult to achieve both the etching property.

本發明人等係對於現今粗糙化處理銅箔中,發現經由將規定於ISO25178之界面之展開面積比Sdr及核心部之階層差Sk,賦予控制於各別特定之範圍之表面輪廓,於覆銅層壓板之加工以至於印刷配線板之製造中,可兼顧優異蝕刻性與高剪切強度。The inventors of the present invention have found that, for the current roughened copper foil, by setting the developed area ratio of the interface defined in ISO25178 to the level difference Sk between Sdr and the core portion, a surface profile controlled within a specific range is given to the copper cladding. In the processing of laminates and even in the manufacture of printed wiring boards, both excellent etching properties and high shear strength can be achieved.

因此,本發明之目的係於覆銅層壓板之加工以至於印刷配線板之製造中,提供可兼顧優異蝕刻性與高剪切強度之粗糙化處理銅箔。Therefore, the object of the present invention is to provide a roughened copper foil that can achieve both excellent etchability and high shear strength in the processing of copper clad laminates and the manufacture of printed wiring boards.

根據本發明之一形態時,提供於至少一方之側,具有粗糙化處理面之粗糙化處理銅箔中, 前述粗糙化處理面係依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之界面之展開面積比Sdr為3.50%以上12.00%以下,依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之核心部之階層差Sk為0.15μm以上0.35μm以下之粗糙化處理銅箔。According to one aspect of the present invention, it is provided in the roughened copper foil having a roughened surface on at least one side, The above-mentioned roughened surface is based on ISO25178, and the developed area ratio Sdr of the interface measured under the conditions of the cutoff wavelength of S filter of 0.55μm and the cutoff wavelength of L filter of 10μm is 3.50% or more and 12.00% or less. According to ISO25178, A roughened copper foil having a core portion level difference Sk of 0.15 μm or more and 0.35 μm or less measured under the conditions of an S filter with a cutoff wavelength of 0.55 μm and an L filter with a cutoff wavelength of 10 μm.

根據本發明之其他之一形態,提供具備載體、和設於該載體上之剝離層、和於該剝離層上,使前述粗糙化處理面向外側設置之前述粗糙化處理銅箔的附有載體銅箔。According to another aspect of the present invention, there is provided a copper with a carrier including a carrier, a peeling layer provided on the carrier, and the roughened copper foil provided on the peeling layer with the roughened surface facing outward. foil.

根據本發明之另一其他之形態時,提供具備前述粗糙化處理銅箔的覆銅層壓板。According to another aspect of this invention, the copper clad laminate provided with the said roughening process copper foil is provided.

根據本發明之另一其他之形態時,提供具備前述粗糙化處理銅箔的印刷配線板。According to another aspect of this invention, the printed wiring board provided with the said roughening process copper foil is provided.

定義definition

將特定本發明之所使用之用語以至於參數之定義,顯示於如下。Definitions of terms and parameters used to specify the present invention are shown below.

於本說明書中,「界面之展開面積比Sdr」係表示依據ISO25178所測定之定義領域之展開面積(表面積),對於定義領域之面積而言,增大多少的參數。然而,本說明書中,將界面之展開面積比Sdr,做為表面積之增加份(%)加以表示者。此值愈小,顯示愈接近平坦之表面形狀,完全平坦之表面之Sdr係成為0%。另一方面,此值愈大,顯示為凹凸愈多之表面形狀。例如,表面之Sdr為40%之時,此表面係顯示從完全平坦之表面增加40%表面積。In this specification, the "expanded area ratio Sdr of the interface" is a parameter indicating how much the expanded area (surface area) of the defined area measured in accordance with ISO25178 increases with respect to the area of the defined area. However, in this specification, the developed area ratio Sdr of the interface is expressed as an increase (%) of the surface area. The smaller the value, the closer to the flat surface shape is displayed, and the Sdr of the completely flat surface becomes 0%. On the other hand, the larger this value is, the more uneven surface shape is displayed. For example, when the Sdr of a surface is 40%, the surface shows a 40% increase in surface area from a completely flat surface.

本說明書中,「面之負荷曲線」(以下,單純稱「負荷曲線」)係表示依據ISO25178測定之負荷面積率為0%至100%的高度的曲線。負荷面積率係如圖3所示,表示某高度c以上之領域之面積的參數。高度c之負荷面積率係相當於圖3之Smr(c)。如圖4所示,將負荷面積率為0%沿著負荷曲線,令負荷面積率之差為40%所拉出負荷曲線之破線,從負荷面積率0%移動,將破線之傾斜最為緩和之位置,稱之為負荷曲線之中央部分。對於此中央部分,將使縱軸方向之偏差之二次方和成為最小之直線,稱之為等價直線。將含於等價直線之負荷面積率0%至100%之高度之範圍的部分,稱之為核心部。將較核心部高之部分,稱之為突出峰部,較核心部低之部分,稱之為突出谷部。In this specification, "surface load curve" (hereinafter, simply referred to as "load curve") refers to a curve with a load area ratio of 0% to 100% measured in accordance with ISO25178. The load area ratio is a parameter representing the area of the area above a certain height c, as shown in FIG. 3 . The load area ratio at the height c corresponds to Smr(c) in FIG. 3 . As shown in Fig. 4, the load area ratio is 0% along the load curve, and the difference between the load area ratios is 40%. The broken line of the load curve is drawn. Move from the load area ratio to 0%, and the inclination of the broken line is the most gentle. The position is called the central part of the load curve. For this central portion, a straight line that minimizes the sum of the squares of the deviations in the vertical axis direction is called an equivalent straight line. The part included in the range of the height of the load area ratio of the equivalent straight line from 0% to 100% is called the core part. The part higher than the core part is called the protruding peak part, and the part lower than the core part is called the protruding valley part.

本說明書中,「核心部之階層差Sk」係從依據ISO25178測定之核心部之最大高度,減去最小高度之值,如圖4所示,經由等價直線之負荷面積率0%與100%之高度差所算出之參數。In this specification, the "level difference Sk of the core part" is the value obtained by subtracting the minimum height from the maximum height of the core part measured according to ISO25178. The parameter calculated from the height difference.

於本說明書中,「最大高度Sz」係表示依據ISO25178所測定之表面之最高點至最低點之距離的參數。In this specification, "maximum height Sz" is a parameter representing the distance from the highest point to the lowest point of the surface measured in accordance with ISO25178.

於本說明書中,「表面性狀之縱橫比Str」係表示依據ISO25178所測定之表面性狀之向同性乃至於向異性的參數。Str係取0至1之範圍,通常Str>0.5顯示強向同性,相反地Str<0.3則顯示強向異性。In the present specification, "aspect ratio Str of surface properties" means a parameter of isotropy or anisotropy of surface properties measured in accordance with ISO25178. Str is in the range of 0 to 1, usually Str>0.5 shows strong isotropy, on the contrary Str<0.3 shows strong anisotropy.

本說明書中,「峰之頂點密度Spd」係表示依據ISO25178所測定之每單位面積之峰頂點之數的參數,僅較輪廓曲面之最大振幅之5%為大之峰頂點進行計算者。此值為大時,則顯示與其他物體之接觸點之數為多。In this specification, "peak apex density Spd" refers to a parameter indicating the number of peak apexes per unit area measured in accordance with ISO25178, and is calculated only as a peak apex larger than 5% of the maximum amplitude of the contour surface. When this value is large, the number of contact points with other objects is displayed.

界面之展開面積比Sdr、核心部之階層差Sk、最大高度Sz、表面性狀之縱橫比Str及峰之頂點密度Spd係可將粗糙化處理面之特定之測定面積(例如16384μm2 之二次元領域)之表面輪廓,經由市售雷射顯微鏡測定,各別加以算出。本說明書中,界面之展開面積比Sdr、核心部之階層差Sk、最大高度Sz及表面性狀之縱橫比Str之各數值係在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下所測定之值。又,本說明書中,峰之頂點密度Spd之數值係在S濾波器所成截止波長3μm及L濾波器所成截止波長10μm之條件下所測定之值。The developed area ratio Sdr of the interface, the level difference Sk of the core, the maximum height Sz, the aspect ratio Str of the surface features, and the peak vertex density Spd are the specific measurement areas of the surface that can be roughened (for example, 16384 μm 2 The second dimension area) The surface profiles were measured by a commercially available laser microscope and calculated separately. In this specification, the values of the developed area ratio Sdr of the interface, the step difference Sk of the core, the maximum height Sz, and the aspect ratio Str of the surface features are set at the cutoff wavelength of 0.55 μm for the S filter and the cutoff wavelength for the L filter. The value measured under the condition of 10 μm. In addition, in this specification, the numerical value of the peak vertex density Spd is a value measured under the conditions of a cutoff wavelength of 3 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter.

本說明書中,載體之「電極面」係指於載體製作時,與陰極接觸側之面。In this specification, the "electrode surface" of the carrier refers to the surface that is in contact with the cathode when the carrier is fabricated.

本說明書中,載體之「析出面」係指於載體製作時,析出電解銅側之面,即與陰極不接觸側之面。In this specification, the "precipitation surface" of the carrier refers to the surface on the side where the electrolytic copper is deposited during the manufacture of the carrier, that is, the surface on the side not in contact with the cathode.

粗糙化處理銅箔 本發明所成銅箔係粗糙化處理銅箔。此粗糙化處理銅箔係於至少一方之側,具有粗糙化處理面。此粗糙化處理面係界面之展開面積比Sdr為3.50%以上12.00%以下,核心部之階層差Sk為0.15μm以上0.35μm以下。如此,於粗糙化處理銅箔中,將界面之展開面積比Sdr及核心部之階層差Sk,經由賦予控制於各別特定之範圍之表面輪廓,於覆銅層壓板之加工以至於印刷配線板之製造中,可兼顧優異蝕刻性與高剪切強度。Roughened copper foil The copper foil obtained by the present invention is a roughened copper foil. This roughened copper foil has a roughened surface on at least one side. The surface area ratio Sdr of the roughened surface is 3.50% or more and 12.00% or less, and the level difference Sk of the core part is 0.15 μm or more and 0.35 μm or less. In this way, in the roughened copper foil, the developed area of the interface is compared with the level difference Sk of Sdr and the core part, and the surface contour is controlled in each specific range by giving the surface profile in the processing of the copper clad laminate and the printed wiring board. In the manufacture, both excellent etching properties and high shear strength can be achieved.

優異之蝕刻性與高剪切強度原本是難以兼顧的。此係如前所述,為了提升銅箔之蝕刻性,一般而言,要求使粗糙化粒子變小,另一方面,為提升電路之剪切強度,一般而言,要求使粗糙化粒子變大。因此,剪切強度係非單純比例於從以往使用於評估之比表面積或粗糙化高度等,難以進行其控制。有關於此,本發明人發現為了取得蝕刻性或剪切強度等之物性之相關,組合界面之展開面積比Sdr及核心部之階層差Sk進行評估為有效的。然後,經由將此等之表面參數各別控制於上述特定範圍內,發現即使蝕刻性優異之微細表面,亦可獲得可確保高剪切強度之適切具有突起高度及比表面積之粗糙化處理銅箔。如此,根據本發明之粗糙化處理銅箔時,可實現優異蝕刻性及高剪切強度,因此,可兼顧優異微細電路形成性與剪切強度之觀點之高電路密合性。然而,以往,對於表面處理銅箔之表面,已知有各別控制展開面積比Sdr、二次方平均平方根表面斜率Sdq及表面性狀之縱橫比Str之技術(參照上述專利文獻1)。但是,此等參數係皆為包含突出峰部求得之參數,控制突出峰部之產生時,皆會有使值變得過小之情形。對此,本發明人等係發現經由各別控制不包含突出峰部之參數之核心部之階層差Sk、和包含突出峰部之參數之展開面積比Sdr,對於粗糙化處理面,控制突出峰部之產生,且可使構成粗糙化處理面之各粗糙化粒子平均地陷入樹脂,由此,即使蝕刻性優異之微細表面,亦可獲得確保高剪切強度之適切具有突起高度及比表面積之粗糙化處理銅箔。Excellent etchability and high shear strength were originally difficult to balance. As mentioned above, in order to improve the etching properties of the copper foil, generally, it is required to make the roughened particles smaller. On the other hand, in order to improve the shear strength of the circuit, generally, it is required to make the roughened particles larger. . Therefore, the shear strength is not simply proportional to the specific surface area and roughening height, etc., which have been conventionally used for evaluation, and it is difficult to control the shear strength. In this regard, the present inventors found that in order to obtain the correlation of physical properties such as etching property and shear strength, it is effective to evaluate the developed area ratio Sdr of the combined interface and the level difference Sk of the core portion. Then, by controlling these surface parameters within the above-mentioned specific ranges, it was found that even with a fine surface excellent in etching property, a roughened copper foil having an appropriate protrusion height and specific surface area that can ensure high shear strength can be obtained. . In this way, when the copper foil is roughened according to the present invention, excellent etching properties and high shear strength can be achieved, and therefore, high circuit adhesion from the viewpoints of excellent fine circuit formability and shear strength can be achieved. Conventionally, however, a technique for individually controlling the developed area ratio Sdr, the quadratic mean square root surface slope Sdq, and the aspect ratio Str of the surface properties has been known for the surface of the surface-treated copper foil (refer to the above-mentioned Patent Document 1). However, these parameters are all parameters obtained by including the protruding peak, and when controlling the generation of the protruding peak, the value may become too small. In this regard, the inventors of the present invention have found that, for the roughened surface, the protruding peaks are controlled by separately controlling the level difference Sk of the core portion that does not include the parameter of the protruding peak portion, and the developed area ratio Sdr of the parameter including the protruding peak portion. In addition, the roughened particles constituting the roughened surface can be evenly immersed in the resin, so that even a fine surface with excellent etchability can obtain a suitable protrusion height and specific surface area to ensure high shear strength. Roughened copper foil.

從可優良平衡實現優異蝕刻性及高剪切強度之觀點視之,粗糙化處理銅箔係粗糙化處理面之界面之展開面積比Sdr為3.50%以上12.00%以下,較佳為4.50%以上8.50%以下,更佳為4.50%以上6.00%以下。在如此範圍內之時,即使為蝕刻性優異之微細表面(粗糙化高度),亦可確保覆銅層壓板乃至於印刷配線板製造時與層積之樹脂之充分黏著面積,提升剪切強度之觀點之電路密合性。From the viewpoint that excellent etching properties and high shear strength can be achieved in a good balance, the developed area ratio Sdr of the interface of the roughened surface of the roughened copper foil is 3.50% or more and 12.00% or less, preferably 4.50% or more and 8.50 % or less, more preferably 4.50% or more and 6.00% or less. Within this range, even if it is a fine surface (roughened height) with excellent etching properties, a sufficient adhesion area between the copper clad laminate and the laminated resin during the manufacture of printed wiring boards can be ensured, and the shear strength can be improved. Circuit tightness of view.

從可優良平衡實現優異蝕刻性及高剪切強度之觀點視之,粗糙化處理銅箔係粗糙化處理面之核心部之階層差Sk為0.15μm以上0.35μm以下,較佳為0.23μm以上0.35μm以下,更佳為0.25μm以上0.35μm以下。在如此範圍內之時,即使為蝕刻性優異之微細表面(粗糙化高度),亦使構成粗糙化處理面之各粗糙化粒子平均地陷入樹脂之結果,提升與樹脂密合性。即,於粗糙化處理有不均之時,該不均係成為粗糙化處理面之突出峰部。但是,如此不均(突出峰部)係難以賦予剪切強度之觀點之電路密合性之提升。此部分,使用於以往評估之最大高度Sz等係包含突出峰部之參數。為此,根據如此參數,達成電路密合性之提升時,易於使粗糙化高度變大,結果蝕刻性易於下降。相較之下,核心部之階層差Sk係如上所述為不包含突出峰部之參數。因此,將核心部之階層差Sk成為評估指標,可正確獲得提升與樹脂之密合性最佳之表面形狀,就結果而言,可抑制粗糙化高度之增大。From the viewpoint that excellent etching properties and high shear strength can be achieved in a good balance, the level difference Sk of the core portion of the roughened surface of the roughened copper foil is 0.15 μm or more and 0.35 μm or less, preferably 0.23 μm or more and 0.35 μm or less, more preferably 0.25 μm or more and 0.35 μm or less. Within such a range, even if it is a fine surface (roughened height) excellent in etching property, each roughened particle constituting the roughened surface is evenly immersed in the resin, and the adhesiveness with the resin is improved. That is, when there is unevenness in the roughening treatment, the unevenness becomes a protruding peak portion of the roughening treatment surface. However, such unevenness (protruding peak portion) is an improvement in circuit adhesion from the viewpoint of difficulty in imparting shear strength. In this section, parameters such as the maximum height Sz used in the previous evaluations include the prominent peaks. Therefore, according to such a parameter, when the improvement of the circuit adhesion is achieved, the roughening height tends to be increased, and as a result, the etching property tends to decrease. In contrast, the level difference Sk of the core portion is a parameter that does not include the protruding peak portion as described above. Therefore, when the level difference Sk of the core portion is used as an evaluation index, the surface shape which improves the adhesion with the resin optimally can be accurately obtained, and as a result, the increase in the roughening height can be suppressed.

粗糙化處理銅箔係對於粗糙化處理面之界面之展開面積比Sdr(%)之核心部之階層差Sk(μm)之比Sk/Sdr為0.038以上0.050以下為佳,較佳為0.045以上0.050以下。在如此範圍內時,粗糙化處理面之凹凸形狀係高度之不均成為更為減低者,不僅不使粗糙化處理面之凹凸形狀為大(即表面積為大),核心部之高度亦可充分確保。即,核心部之階層差Sk係排除突出峰部求得之參數,另一方面,展開面積比Sdr係包含突出峰部求得之參數。為此,增減突出峰部之數時,核心部之階層差Sk之值係一定,展開面積比Sdr之值亦會變化。為此,經由將核心部之階層差Sk、和展開面積比Sdr之比例,控制在上述範圍,對於粗糙化處理面,可抑制突出峰部之產生,由此構成粗糙化處理面之各粗糙化粒子則易於平均地陷入樹脂。其結果,可更優質平衡實現優異蝕刻性及高剪切強度。The roughened copper foil is preferably 0.038 or more and 0.050 or less, preferably 0.045 or more and 0.050, and the ratio Sk/Sdr of the layer difference Sk (μm) of the developed area ratio Sdr (%) of the interface of the roughened surface to the surface of the roughened surface. the following. Within such a range, the unevenness of the height of the unevenness of the roughened surface will be further reduced, and the unevenness of the roughened surface will not be increased (that is, the surface area will be large), and the height of the core portion can be sufficient. make sure. That is, the level difference Sk of the core portion is a parameter obtained by excluding the protruding peak portion, while the developed area ratio Sdr is a parameter obtained by including the protruding peak portion. Therefore, when the number of protruding peaks is increased or decreased, the value of the level difference Sk of the core portion is constant, and the value of the developed area ratio Sdr is also changed. Therefore, by controlling the ratio of the level difference Sk of the core portion and the developed area ratio Sdr to the above-mentioned range, the generation of protruding peaks can be suppressed for the roughened surface, thereby constituting each roughening of the roughened surface. The particles tend to sink evenly into the resin. As a result, excellent etching properties and high shear strength can be achieved in a better balance.

粗糙化處理銅箔係粗糙化處理面之最大高度Sz(μm)及核心部之階層差Sk(μm)之積Sz×Sk為0.25以上0.50以下為佳,較佳為0.36以上0.50以下。如此之範圍內時,粗糙化處理面之凹凸形狀,可更抑制突出峰部之產生,可更適於優質平衡實現優異蝕刻性及高剪切強度。又,從實現優異蝕刻性之微細表面之觀點視之,粗糙化處理銅箔之粗糙化處理面係最大高度Sz為1.6μm以下為佳,更佳為1.0μm以上1.4μm以下,更甚者為1.0μm以上1.2μm以下。The roughened copper foil is preferably the product Sz×Sk of the maximum height Sz (μm) of the roughened surface and the level difference Sk (μm) of the core part of 0.25 or more and 0.50 or less, more preferably 0.36 or more and 0.50 or less. Within such a range, the uneven shape of the roughened surface can further suppress the generation of protruding peaks, and can be more suitable for a high-quality balance to achieve excellent etching properties and high shear strength. In addition, from the viewpoint of realizing a fine surface with excellent etching properties, the maximum height Sz of the roughened surface of the roughened copper foil is preferably 1.6 μm or less, more preferably 1.0 μm or more and 1.4 μm or less, and even more 1.0 μm or more and 1.2 μm or less.

粗糙化處理銅箔係粗糙化處理面之峰之頂點密度Spd為2.00×104 mm-2 以上3.00×104 mm-2 以下為佳,較佳為2.20×104 mm-2 以上3.00×104 mm-2 以下,更佳為2.75×104 mm-2 以上2.85×104 mm-2 以下。經由如此,可確保覆銅層壓板乃至於印刷配線板製造時與層積之樹脂之充分黏著點,更有效提升剪切強度之觀點之電路密合性。The peak density Spd of the roughened surface of the roughened copper foil is preferably 2.00×10 4 mm -2 or more and 3.00×10 4 mm -2 or less, preferably 2.20×10 4 mm -2 or more and 3.00×10 4 mm -2 or less, more preferably 2.75×10 4 mm -2 or more and 2.85×10 4 mm -2 or less. In this way, sufficient adhesion points between the copper clad laminate and the laminated resin can be ensured when manufacturing the printed wiring board, and the circuit adhesion in terms of shear strength can be improved more effectively.

粗糙化處理銅箔係粗糙化處理面之表面性狀之縱橫比Str為0.2以上0.5以下為佳,較佳為0.24以上0.50以下,更佳為0.45以上0.50以下。如此之範圍內時,於粗糙化處理面,存在與樹脂之密接適切之波動。其結果,即使是蝕刻性優異之微細表面,亦可有效提升剪切強度之觀點之電路密合性。The aspect ratio Str of the roughened surface of the roughened copper foil is preferably 0.2 or more and 0.5 or less, preferably 0.24 or more and 0.50 or less, more preferably 0.45 or more and 0.50 or less. Within such a range, the roughened surface will have fluctuations that are suitable for adhesion to the resin. As a result, even if it is a fine surface excellent in etching property, the circuit adhesiveness from a viewpoint of shear strength can be improved effectively.

粗糙化處理銅箔之厚度雖未特別加以限定,0.1μm以上35μm以下為佳,較佳為0.5μm以上5.0μm以下,更佳為1.0μm以上3.0μm以下。然而,粗糙化處理銅箔係不限於通常之銅箔之表面,進行粗糙化處理者,於附有載體銅箔之銅箔表面,進行粗糙化處理亦可。在此,粗糙化處理銅箔之厚度係不包含形成於粗糙化處理面之表面之粗糙化粒子之高度之厚度(構成粗糙化處理銅箔之銅箔本身之厚度)。有將具有上述範圍之厚度之銅箔,稱之為極薄銅箔之情形。The thickness of the roughened copper foil is not particularly limited, but is preferably 0.1 μm or more and 35 μm or less, preferably 0.5 μm or more and 5.0 μm or less, and more preferably 1.0 μm or more and 3.0 μm or less. However, the roughened copper foil is not limited to the surface of the usual copper foil, and the roughened copper foil may be roughened on the surface of the copper foil with the carrier copper foil. Here, the thickness of the roughened copper foil does not include the height of the roughened particles formed on the surface of the roughened surface (the thickness of the copper foil itself constituting the roughened copper foil). There are cases where the copper foil having the thickness in the above range is called an ultra-thin copper foil.

粗糙化處理銅箔係於至少一方之側,具有粗糙化處理面。即,粗糙化處理銅箔係於兩側,具有粗糙化處理面亦可,僅於一方之側,具有粗糙化處理面亦可。粗糙化處理面係典型而言具備複數之粗糙化粒子(突起),此等複數之粗糙化粒子係各別由銅粒子所成為佳。銅粒子係可由金屬銅所成,亦可由銅合金所成。The roughened copper foil has a roughened surface on at least one side. That is, the roughened copper foil may have a roughened surface on both sides, and may have a roughened surface only on one side. The roughened surface is typically provided with a plurality of roughened particles (protrusions), and each of these pluralities of roughened particles is preferably composed of copper particles. The copper particles may be made of metallic copper or may be made of a copper alloy.

為形成粗糙化處理面之粗糙化處理係於銅箔之上,以銅或銅合金形成粗糙化粒子,可較佳地被進行。例如,根據經由包含於銅箔之上,析出附著微細銅粒之燒結鍍敷工程、和為防止此微細銅粒之脫落之被覆鍍敷工程之至少2種類之鍍敷工程的鍍敷手法,進行粗糙化處理為佳。此時,燒結鍍敷工程係於包含銅濃度5g/L以上20g/L以下及硫酸濃度180g/L以上240g/L以下之硫酸銅溶液,將羧基苯并三唑(CBTA),添加至成為20ppm以上29ppm以下之濃度,在15℃以上35℃以下之溫度下,於14A/dm2 以上24A/dm2 以下,進行電沉積為佳。又,被覆鍍敷工程係於包含銅濃度50g/L以上100g/L以下及硫酸濃度200g/L以上250g/L以下之硫酸銅溶液中,在40℃以上60℃以下之溫度下,於2A/dm2 以上4A/dm2 以下,進行電沉積為佳。對此,於燒結鍍敷工程中,將上述濃度範圍內之羧基苯并三唑,添加於電鍍液,保持接近純銅之蝕刻性下,對於粗糙化處理面,控制突出峰部之產生,且可使構成粗糙化處理面之各粗糙化粒子成為平均地陷入樹脂之構成,易於形成於滿足上述表面參數之適切突起處理表面。更且,燒結鍍敷工程及被覆鍍敷工程中,較以往之手法,下降電流密度進行電沉積,更可將滿足上述表面參數之適切突起,易於形成於處理表面。The roughening treatment to form the roughened surface is preferably performed on the copper foil to form roughened particles with copper or a copper alloy. For example, it is carried out according to the plating method of at least two types of plating processes including a sintering plating process in which fine copper particles are deposited and adhered on the copper foil, and a coating plating process in order to prevent the peeling of the fine copper particles. Roughening treatment is better. At this time, in the sintering plating process, carboxybenzotriazole (CBTA) is added to a copper sulfate solution containing a copper concentration of 5 g/L or more and 20 g/L or less and a sulfuric acid concentration of 180 g/L or more and 240 g/L or less. Electrodeposition is preferably performed at a concentration of not less than 29 ppm and at a temperature of not less than 15° C. and not more than 35° C. and not less than 14 A/dm 2 and not more than 24 A/dm 2 . In addition, the coating plating process is carried out in a copper sulfate solution containing a copper concentration of 50 g/L or more and 100 g/L or less and a sulfuric acid concentration of 200 g/L or more and 250 g/L or less. dm 2 or more and 4A/dm 2 or less, preferably electrodeposition. In this regard, in the sintering plating process, the carboxybenzotriazole within the above concentration range is added to the plating solution to maintain the etchability close to pure copper. The roughened particles constituting the roughened surface are evenly immersed in the resin, so that it is easy to form on the surface with appropriate protrusions that satisfies the above-mentioned surface parameters. Furthermore, in the sinter plating process and the coating plating process, electrodeposition is performed at a lower current density than in the conventional method, and suitable protrusions satisfying the above-mentioned surface parameters can be easily formed on the treated surface.

經由所期望,粗糙化處理銅箔係可以防鏽處理,形成防鏽處理層亦可。防鏽處理係包含使用鋅之鍍敷處理之為佳。使用鋅之鍍敷處理係鋅鍍敷處理及鋅合金鍍敷處理之任一者皆可,鋅合金鍍敷處理係以鋅-鎳合金處理尤佳。鋅-鎳合金處理係至少包含Ni及Zn之鍍敷處理即可,更包含Sn、Cr、Co等之其他元素亦可。鋅-鎳合金鍍敷之Ni/Zn附著比率係質量比為1.2以上10以下為佳,較佳為2以上7以下,更佳為2.7以上4以下。又,防鏽處理為更包含鉻酸鹽處理亦可,此鉻酸鹽處理係於使用鋅鍍敷處理後,進行於包含鋅之鍍敷之表面則更佳。經由如此,可更提升防鏽性。尤佳之防鏽處理係組合鋅-鎳合金鍍敷處理與之後之鉻酸鹽處理。As desired, the roughening-treated copper foil system can be rust-proof, and a rust-proof layer may be formed. The anti-rust treatment preferably includes a plating treatment using zinc. The plating treatment using zinc may be either a zinc plating treatment or a zinc alloy plating treatment, and the zinc alloy plating treatment is preferably a zinc-nickel alloy treatment. The zinc-nickel alloy treatment may be a plating treatment including at least Ni and Zn, and may further include other elements such as Sn, Cr, and Co. The Ni/Zn adhesion ratio of zinc-nickel alloy plating is preferably 1.2 or more and 10 or less, preferably 2 or more and 7 or less, more preferably 2.7 or more and 4 or less. In addition, the antirust treatment may further include a chromate treatment, and this chromate treatment is preferably performed on a surface plated with zinc after a zinc plating treatment is used. By doing so, the rust resistance can be further improved. A particularly preferred anti-rust treatment is a combination of zinc-nickel alloy plating treatment followed by chromate treatment.

經由所期望,粗糙化處理銅箔係於表面,係可施以矽烷耦合劑處理,形成矽烷耦合劑層亦可。由此,可提升耐濕性、耐藥品性及黏著劑等之密合性等。矽烷耦合劑層係適切稀釋矽烷耦合劑加以塗佈,經由乾燥加以形成。做為矽烷耦合劑之例,可列舉4-環氧丙基丁基三甲氧基矽烷、3-縮水甘油醚氧基丙基三甲氧基矽烷等之環氧官能性矽烷耦合劑、或3-胺基丙基三甲氧基矽烷、N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等之胺基官能性矽烷耦合劑、或3-氫硫基丙基三甲氧基矽烷等之氫硫基官能性矽烷耦合劑或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等之烯烴官能性矽烷耦合劑、或3-甲基丙醯氧基丙基三甲氧基矽烷等之丙烯酸官能性矽烷耦合劑、或咪唑矽烷等之咪唑官能性矽烷耦合劑、或三嗪矽烷等之三嗪官能性矽烷耦合劑等。As desired, the surface of the roughened copper foil may be treated with a silane coupling agent, and a silane coupling agent layer may be formed. Thereby, moisture resistance, chemical resistance, adhesiveness of adhesives, etc. can be improved. The silane coupling agent layer is applied by appropriately diluting the silane coupling agent, and is formed by drying. Examples of silane coupling agents include epoxy-functional silane coupling agents such as 4-epoxypropylbutyltrimethoxysilane, 3-glycidyloxypropyltrimethoxysilane, etc., or 3-amine. propyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, N-3-(4-(3-aminopropoxy)butoxy) Amino-functional silane coupling agents such as propyl-3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, or 3-hydrothiopropyltrimethoxysilane Hydrogen thio-functional silane coupling agent such as silane or olefin-functional silane coupling agent such as vinyltrimethoxysilane, vinylphenyltrimethoxysilane, etc., or 3-methylpropionyloxypropyltrimethoxysilane Acrylic-functional silane coupling agent such as silane, imidazole-functional silane coupling agent such as imidazole silane, or triazine-functional silane coupling agent such as triazine silane, etc.

由上述理由,粗糙化處理銅箔係於粗糙化處理面,更具備防鏽處理層及/或矽烷耦合劑層為佳,較佳為具備防鏽處理層及矽烷耦合劑層之兩者。防鏽處理層及矽烷耦合劑層係不僅粗糙化處理銅箔之粗糙化處理面側,形成於未形成粗糙化處理面側亦可。For the above reasons, the roughened copper foil is preferably further provided with an antirust treatment layer and/or a silane coupling agent layer on the roughened surface, preferably both of the antirust treatment layer and the silane coupling agent layer. The antirust treatment layer and the silane coupling agent layer may be formed not only on the roughened surface side of the roughened copper foil, but also on the side where the roughened surface is not formed.

附有載體銅箔 如上所述,本發明之粗糙化處理銅箔係以附有載體銅箔之形態提供亦可。即,根據本發明之較佳形態,提供具備載體、和設於載體上之剝離層、和於剝離層上,使粗糙化處理面向外側設置之上述粗糙化處理銅箔的附有載體銅箔。當然,附有載體銅箔係除了使用本發明之粗糙化處理銅箔之外,可採用公知之層構成。With carrier copper foil As described above, the roughened copper foil of the present invention may be provided in a form with a carrier copper foil. That is, according to a preferred aspect of the present invention, there is provided a copper foil with a carrier including a carrier, a release layer provided on the carrier, and the above-mentioned roughened copper foil provided on the release layer with the roughened surface facing outward. Of course, the copper foil with a carrier can be constituted by a known layer in addition to the use of the roughened copper foil of the present invention.

載體係支持粗糙化處理銅箔,提升該操作性之支持體,典型之載體係包含金屬層。做為如此載體之例,可列舉鋁箔、銅箔、不鏽鋼(SUS)箔、將表面以銅等金屬塗佈之樹脂薄膜或玻璃等,較佳為銅箔。銅箔係雖可為輥壓銅箔及電解銅箔之任一者,較佳為電解銅箔。載體之厚度係典型為250μm以下,較佳為9μm以上200μm以下。The carrier system supports the roughened copper foil to improve the handleability. A typical carrier system includes a metal layer. Examples of such a carrier include aluminum foil, copper foil, stainless steel (SUS) foil, resin film or glass whose surface is coated with a metal such as copper, and copper foil is preferred. Although the copper foil may be either a rolled copper foil or an electrolytic copper foil, an electrolytic copper foil is preferable. The thickness of the carrier is typically 250 μm or less, preferably 9 μm or more and 200 μm or less.

載體之剝離層側之面係平滑為佳。即,於附有載體銅箔之製造程序中,於載體之剝離層側之面,形成(進行粗糙化處理前之)極薄銅箔。將本發明之粗糙化處理銅箔以附有載體銅箔之形態使用之時,粗糙化處理銅箔係對於如此極薄銅箔,經由施以粗糙化處理而獲得。因此,經由平滑載體之剝離層側之面,亦可使極薄銅箔之外側之面變得平滑,於此極薄銅箔之平滑面,施以粗糙化處理,易於實現具有上述特定範圍內之界面之展開面積比Sdr及核心部之階層差Sk之粗糙化處理面。為使載體之剝離層側之面變得平滑,例如將載體使用於電解製箔之陰極表面,以特定之型號之磨輪進行研磨,調整表面粗糙度加以進行。即,經由如此調整之陰極之表面輪廓轉印在載體之電極面,於此載體之電極面上,隔著剝離層,形成極薄銅箔,於極薄銅箔之外側面,可賦予易於實現上述粗糙化處理面之平滑表面狀態。較佳磨輪之型號係#2000以上#3000以下,更佳為#2000以上#2500以下。Preferably, the surface of the carrier on the release layer side is smooth. That is, in the manufacturing process of the copper foil with a carrier, on the surface of the peeling layer side of a carrier, the ultra-thin copper foil (before roughening process is performed) is formed. When the roughened copper foil of the present invention is used in a form with a carrier copper foil, the roughened copper foil is obtained by subjecting such an ultra-thin copper foil to roughening. Therefore, by smoothing the surface of the release layer side of the carrier, the outer surface of the ultra-thin copper foil can also be smoothed, and the smooth surface of the ultra-thin copper foil is roughened, and it is easy to achieve the above-mentioned specific range. The developed area of the interface is worse than the level of Sdr and the core part by the roughened surface of Sk. In order to smooth the surface of the carrier on the side of the peeling layer, for example, the carrier is used on the cathode surface of the electrolytic foil, and it is ground with a specific type of grinding wheel to adjust the surface roughness. That is, the surface profile of the cathode adjusted in this way is transferred to the electrode surface of the carrier. On the electrode surface of the carrier, an ultra-thin copper foil is formed through the peeling layer. On the outer side of the ultra-thin copper foil, it can be easily The smooth surface state of the above-mentioned roughened surface. The preferred type of grinding wheel is above #2000 and below #3000, more preferably above #2000 and below #2500.

剝離層係弱化載體之剝落強度,擔保該強度之安定性,更且具有抑制於高溫之加壓成形時在載體與銅箔間產生相互之擴散的機能層。剝離層係一般形成於載體之一方面,但形成於兩面亦可。剝離層係可為有機剝離層及無機剝離層之任一者。做為使用於有機剝離層之有機成分之例,可列舉含氮有機化合物、含硫有機化合物、羧酸等。做為含氮有機化合物之例,可列舉三唑化合物、咪唑化合物等,其中三唑化合物係易於安定剝離性之部分為佳。做為三唑化合物之例,可列舉1,2,3-苯並三唑、羧基苯并三唑、N’,N’-雙(苯并三唑基甲基)尿素、1H-1,2,4-三唑及3-胺基-1H-1,2,4-三唑等。做為含硫有機化合物之例,可列舉氫硫基苯并噻唑、三聚硫氰酸,2-苯並咪唑硫羥酸等。做為羧酸之例,可列舉單羧酸、二羧酸等。另一方面,做為使用於無機剝離層之無機成分之例,可列舉Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn、鉻酸鹽處理膜等。然而,剝離層之形成係於載體之至少一方之表面,接觸含剝離層成分溶液,將剝離層成分固定於載體之表面等加以進行即可。將載體接觸於含剝離層成分溶液之時,此接觸係經由對於含剝離層成分溶液之浸漬、含剝離層成分溶液之噴霧、含剝離層成分溶液之流下等加以進行即可。其他,可採用以蒸鍍或濺鍍等所成氣相法,將剝離層成分被膜形成之方法。又,對於剝離層成分之載體表面之固定,係經由含剝離層成分溶液之吸附或乾燥、含剝離層成分溶液中之剝離層成分之電沉積等加以進行即可。剝離層之厚度係典型為1nm以上1μm以下,較佳為5nm以上500nm以下。The peeling layer weakens the peeling strength of the carrier, guarantees the stability of the strength, and has a functional layer that inhibits the mutual diffusion between the carrier and the copper foil during high-temperature compression molding. The release layer is generally formed on one side of the carrier, but may be formed on both sides. The peeling layer may be any of an organic peeling layer and an inorganic peeling layer. As an example of the organic component used for the organic peeling layer, a nitrogen-containing organic compound, a sulfur-containing organic compound, a carboxylic acid, etc. are mentioned. Examples of the nitrogen-containing organic compound include triazole compounds, imidazole compounds, and the like, and among them, the triazole compound is preferably a part that is easy to stabilize and peel off. Examples of triazole compounds include 1,2,3-benzotriazole, carboxybenzotriazole, N',N'-bis(benzotriazolylmethyl)urea, 1H-1,2 , 4-triazole and 3-amino-1H-1,2,4-triazole, etc. Examples of the sulfur-containing organic compound include thiothiobenzothiazole, thiocyanate, 2-benzimidazole thiol acid, and the like. As an example of a carboxylic acid, a monocarboxylic acid, a dicarboxylic acid, etc. are mentioned. On the other hand, as an example of the inorganic component used for the inorganic peeling layer, Ni, Mo, Co, Cr, Fe, Ti, W, P, Zn, a chromate treatment film, etc. are mentioned. However, the formation of the peeling layer may be performed on at least one surface of the carrier by contacting a solution containing the peeling layer component to fix the peeling layer component on the surface of the carrier. When the carrier is brought into contact with the release layer component-containing solution, the contact may be performed by dipping the release layer component-containing solution, spraying the release layer component-containing solution, or flowing the release layer component-containing solution. Otherwise, a method of forming a film of the peeling layer component by vapor deposition, sputtering, or the like can be employed. In addition, fixation of the carrier surface of the peeling layer component may be performed by adsorption or drying of the solution containing the peeling layer component, electrodeposition of the peeling layer component in the solution containing the peeling layer component, or the like. The thickness of the peeling layer is typically 1 nm or more and 1 μm or less, preferably 5 nm or more and 500 nm or less.

經由所期望,於剝離層與載體及/或粗糙化處理銅箔間,設置其他機能層亦可。做為如此其他機能層之例,可列舉補助金屬層。補助金屬層係由鎳及/或鈷所成為佳。經由將如此補助金屬層形成於載體之表面側及/或粗糙化處理銅箔之表面側,於高溫或長時間之熱壓成形時,可抑制在載體與粗糙化銅箔間產生之相互擴散,擔保載體之剝落強度之安定性。補助金屬層之厚度為0.001μm以上3μm以下為佳。As desired, other functional layers may be provided between the release layer and the carrier and/or the roughened copper foil. Examples of such other functional layers include auxiliary metal layers. The auxiliary metal layer is preferably made of nickel and/or cobalt. By forming such an auxiliary metal layer on the surface side of the carrier and/or the surface side of the roughened copper foil, the mutual diffusion between the carrier and the roughened copper foil can be suppressed during hot pressing at high temperature or for a long time. Guarantee the stability of the peel strength of the carrier. The thickness of the auxiliary metal layer is preferably 0.001 μm or more and 3 μm or less.

覆銅層壓板 本發明之粗糙化處理銅箔係使用於印刷配線板用覆銅層壓板之製作為佳。即,根據本發明之較佳形態時,提供具備上述粗糙化處理銅箔之覆銅層壓板。經由使用本發明之粗糙化處理銅箔,於覆銅層壓板之加工中,可兼顧優異蝕刻性與高剪切強度。此覆銅層壓板係具備本發明之粗糙化處理銅箔、和密接於粗糙化處理銅箔之粗糙化處理面設置之樹脂層。粗糙化處理銅箔係可設於樹脂層之單面,亦可設於兩面。樹脂層係包含樹脂而成,較佳為包含絕緣性樹脂而成。樹脂層係預浸體及/或樹脂薄片為佳。預浸體係於合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等之基材,含浸合成樹脂之複合材料之總稱。做為絕緣性樹脂之較佳例,可列舉環氧樹脂、氰酸鹽樹脂、雙馬來酸酐縮亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂等。又,做為構成樹脂薄片之絕緣性樹脂之例,可列舉環氧樹脂、聚醯亞胺樹脂、聚酯樹脂等之絕緣樹脂。又,於樹脂層,從提升絕緣性等之觀點視之,亦可含有矽石、氧化鋁等之各種無機粒子所成填料粒子等。樹脂層之厚度雖未特別加以限定,1μm以上1000μm以下為佳,較佳為2μm以上400μm以下,更佳為3μm以上200μm以下。樹脂層係可以複數之層加以構成。預浸體及/或樹脂薄片等之樹脂層係隔著預先塗佈於銅箔表面塗裝樹脂層,設於粗糙化處理銅箔亦可。CCL The roughened copper foil of the present invention is preferably used in the production of copper-clad laminates for printed wiring boards. That is, according to the preferable aspect of this invention, the copper clad laminate provided with the said roughening process copper foil is provided. By using the roughened copper foil of the present invention, in the processing of the copper clad laminate, both excellent etching properties and high shear strength can be achieved. This copper-clad laminate includes the roughened copper foil of the present invention, and a resin layer provided in close contact with the roughened surface of the roughened copper foil. The roughened copper foil may be provided on one side of the resin layer, or may be provided on both sides. The resin layer contains a resin, preferably an insulating resin. The resin layer is preferably a prepreg and/or a resin sheet. The prepreg system is a general term for composite materials impregnated with synthetic resins on substrates such as synthetic resin sheets, glass sheets, glass woven fabrics, glass non-woven fabrics, and paper. As a preferable example of an insulating resin, an epoxy resin, a cyanate resin, a bismaleic anhydride imide triazine resin (BT resin), a polyphenylene ether resin, a phenol resin, etc. are mentioned. Moreover, as an example of the insulating resin which comprises a resin sheet, insulating resin, such as an epoxy resin, a polyimide resin, a polyester resin, is mentioned. In addition, the resin layer may contain filler particles and the like made of various inorganic particles such as silica and alumina from the viewpoint of improving insulating properties and the like. The thickness of the resin layer is not particularly limited, but is preferably 1 μm or more and 1000 μm or less, preferably 2 μm or more and 400 μm or less, and more preferably 3 μm or more and 200 μm or less. The resin layer may be constituted by plural layers. The resin layer, such as a prepreg and/or a resin sheet, may be provided on the roughened copper foil by coating the resin layer on the surface of the copper foil through preliminarily coating.

印刷配線板 本發明之粗糙化處理銅箔係使用於印刷配線板之製作為佳。即,根據本發明之較佳形態時,提供具備上述粗糙化處理銅箔之印刷配線板。經由使用本發明之粗糙化處理銅箔,於印刷配線板之製造中,可兼顧優異蝕刻性與高剪切強度。本形態所成印刷配線板係包含層積樹脂層、和銅層的層構成而成。銅層係由來於本發明之粗糙化處理銅箔之層。又,對於樹脂層,有關覆銅層壓板之部分則如上述。不論如何,印刷配線板係除了使用本發明之粗糙化處理銅箔之外,可採用公知之層構成。做為關於印刷配線板之具體例,可列舉在成為在於預浸體之單面或兩面,黏著本發明之粗糙化處理銅箔而硬化之層積體上,形成電路之單面或兩面之印刷配線板,或將此等多層化之多層印刷配線板等。又,做為其他具体例,係於樹脂薄膜上,形成本發明之粗糙化處理銅箔,形成電路之可撓性印刷配線板、COF、TAB膠帶等。做為更為其他之具體例,可列舉於本發明之粗糙化處理銅箔,形成塗佈上述樹脂層之附有樹脂銅箔(RCC),將樹脂層做為絕緣接著材層,層積於上述印刷基板後,將粗糙化處理銅箔做為配線層之全部或一部分,以改良型半加成(MSAP)法、消去處理法等之手法,形成電路的多層配線板,或除去粗糙化處理銅箔,以部分加成法形成電路之多層配線板,交互重覆對半導體積體電路上之附有樹脂銅箔之層積和電路形成之直接層積晶圓等。做為更為發展之具體例,可列舉將上述附有樹脂銅箔層積於基材電路形成之天線元件、隔著黏著劑層,層積於玻璃或樹脂薄膜,形成圖案之面板・顯示器用電子材料或窗戶玻璃用電子材料、於本發明之粗糙化處理銅箔塗佈導電性黏著劑之電磁波遮蔽・薄膜等。尤其,本發明之粗糙化處理銅箔係適於MSAP法。例如經由MSAP法電路形成之時,可採用圖1及圖2所示構成。 [實施例]printed wiring board The roughened copper foil of the present invention is preferably used in the production of printed wiring boards. That is, according to the preferable aspect of this invention, the printed wiring board provided with the said roughening process copper foil is provided. By using the roughened copper foil of the present invention, both excellent etching properties and high shear strength can be achieved in the manufacture of printed wiring boards. The printed wiring board obtained in this embodiment is composed of layers including a laminated resin layer and a copper layer. The copper layer is a layer derived from the roughened copper foil of the present invention. In addition, as for the resin layer, the part related to the copper clad laminate is as described above. In any case, the printed wiring board can be constituted by a known layer in addition to the use of the roughened copper foil of the present invention. As a specific example of the printed wiring board, one or both sides of the prepreg can be printed on one side or both sides of the prepreg to form the circuit on one side or both sides of the laminate to which the roughened copper foil of the present invention is adhered and cured. Wiring boards, or multilayer printed wiring boards, etc. Moreover, as another specific example, the roughened copper foil of this invention is formed on a resin film, and the flexible printed wiring board, COF, TAB tape etc. which form a circuit are formed. As a more specific example, the roughened copper foil of the present invention can be listed, forming a resin-coated copper foil (RCC) coated with the above-mentioned resin layer, using the resin layer as an insulating adhesive layer, and laminating it on the resin layer. After the above-mentioned printed circuit board, the roughened copper foil is used as all or a part of the wiring layer, and the multi-layer wiring board of the circuit is formed by methods such as the modified semi-additive (MSAP) method, the erasing treatment method, etc., or the roughening treatment is removed. Copper foil, multilayer wiring board for circuit formation by partial additive method, laminated copper foil with resin on semiconductor integrated circuit and direct lamination wafer for circuit formation are alternately repeated. As a specific example of further development, there are antenna elements formed by laminating the above-mentioned resin-coated copper foil on a substrate circuit, laminated on glass or resin film through an adhesive layer, and patterned for panels and displays. Electronic materials or electronic materials for window glass, electromagnetic wave shielding films, etc., which are coated with a conductive adhesive on the roughened copper foil of the present invention. In particular, the roughened copper foil of the present invention is suitable for the MSAP method. For example, when the circuit is formed by the MSAP method, the configuration shown in FIG. 1 and FIG. 2 can be adopted. [Example]

將本發明,經由以下之例,更具體說明。The present invention will be described more specifically through the following examples.

例1~7、9及10 將具備粗糙化處理銅箔之附有載體銅箔,如以下製作及評估。Examples 1~7, 9 and 10 The copper foil with the carrier with the roughened copper foil was produced and evaluated as follows.

(1)載體之準備 使用以下所示組成之銅電解液、和陰極、和做為陽極之DSA(尺寸安定性陽極),以溶液溫度50℃、電流密度70A/dm2 電解,將厚18μm之電解銅箔,做為載體加以製作。此時,做為陰極,使用將表面以#2000之磨輪研磨,整飭表面粗糙度之電極。 <銅電解液之組成> ‐ 銅濃度:80g/L ‐ 硫酸濃度:300g/L ‐ 氯濃度:30mg/L - 膠濃度:5mg/L(1) Preparation of the carrier Using the copper electrolyte with the composition shown below, the cathode, and the DSA (dimensionally stable anode) as the anode, electrolysis was carried out at a solution temperature of 50°C and a current density of 70A/dm 2 , and the thickness of 18 μm was electrolyzed. Electrolytic copper foil is produced as a carrier. At this time, as a cathode, an electrode whose surface was ground with a #2000 grinding wheel to adjust the surface roughness was used. <Composition of copper electrolyte> - Copper concentration: 80g/L - Sulfuric acid concentration: 300g/L - Chlorine concentration: 30mg/L - Glue concentration: 5mg/L

(2)剝離層之形成 將酸洗處理之載體之電極面,於包含羧基苯并三唑(CBTA)濃度1g/L、硫酸濃度150g/L及銅濃度10g/L之CBTA水溶液,以液溫30℃浸漬30秒鐘,將CBTA成分吸附於載體之電極面。如此,於載體之電極面,將CBTA層做為有機剝離層而形成。(2) Formation of peeling layer Immerse the electrode surface of the pickled carrier in a CBTA aqueous solution containing carboxybenzotriazole (CBTA) concentration of 1g/L, sulfuric acid concentration of 150g/L and copper concentration of 10g/L at a liquid temperature of 30°C for 30 seconds. The CBTA component is adsorbed on the electrode surface of the carrier. In this way, on the electrode surface of the carrier, the CBTA layer is formed as an organic peeling layer.

(3)補助金屬層之形成 將形成有機剝離層之載體,浸漬於使用硫酸鎳製作之含鎳濃度20g/L之溶液,以液溫45℃、pH3、電流密度5A/dm2 之條件,將相當厚度0.001μm之附著量之鎳,附著於有機剝離層上。如此,於有機剝離層上,將鎳層做為補助金屬層而形成。(3) allowance formed metal layer to form a carrier organic release layer, the impregnation production of nickel concentration of 20g / L of solution was nickel sulfate, a liquid temperature of 45 ℃, pH3, a current density of 5A / dm condition 2 of the Nickel with a thickness equivalent to 0.001 μm adhered to the organic peeling layer. Thus, on the organic peeling layer, the nickel layer was formed as an auxiliary metal layer.

(4)極薄銅箔之形成 將形成補助金屬層之載體,浸漬於以下所示組成之銅溶液,以溶液溫度50℃、電流密度5A/dm2 以上30A/dm2 以下電解,將厚度1.5μm之極薄銅箔,形成於補助金屬層上。 <溶液之組成> ‐ 銅濃度:60g/L ‐ 硫酸濃度:200g/L(4) forming the ultra-thin copper foil forming the metal layer support grant, the composition was immersed in a copper solution shown below, a solution temperature of 50 ℃, a current density of 5A / dm 2 or more 30A / dm 2 or less electrolysis, thickness 1.5 The ultra-thin copper foil of μm is formed on the auxiliary metal layer. <The composition of the solution> ‐ Copper concentration: 60g/L ‐ Sulfuric acid concentration: 200g/L

(5)粗糙化處理 於如此形成之極薄銅箔之表面,進行粗糙化處理,形成粗糙化處理銅箔,由此獲得附有載體銅箔。此粗糙化處理係由於極薄銅箔之上,析出附著微細銅粒之燒結鍍敷工程、和為防止此微細銅粒之脫落之被覆鍍敷工程所構成。燒結鍍敷工程中,於包含銅濃度10g/L及硫酸濃度200g/L之液溫25℃之酸性硫酸銅溶液,添加表1所示濃度之羧基苯并三唑(CBTA),以表1所示電流密度,進行粗糙化處理。之後之被覆鍍敷工程中,使用包含銅濃度70g/L及硫酸濃度240g/L之酸性硫酸銅溶液,以液溫52℃及表1所示電流密度之平滑鍍敷條件,進行電沉積。此時,將燒結鍍敷工程之CBTA濃度及電流密度,以及被覆鍍敷工程之電流密度,適切變更表1所示者,裁作粗糙化處理表面之特徵為不同之各種樣本。(5) Roughening treatment The surface of the ultra-thin copper foil thus formed is roughened to form a roughened copper foil, thereby obtaining a carrier-attached copper foil. This roughening treatment consists of a sintering plating process for depositing and adhering fine copper particles on the ultra-thin copper foil, and a coating plating process for preventing the falling off of the fine copper particles. In the sintering and plating process, the carboxybenzotriazole (CBTA) of the concentration shown in Table 1 was added to an acidic copper sulfate solution containing a copper concentration of 10 g/L and a sulfuric acid concentration of 200 g/L at a liquid temperature of 25 °C. The current density is shown, and roughening treatment is carried out. In the subsequent coating plating process, electrodeposition was performed using an acidic copper sulfate solution containing a copper concentration of 70 g/L and a sulfuric acid concentration of 240 g/L under the smooth plating conditions of the solution temperature of 52° C. and the current density shown in Table 1. At this time, the CBTA concentration and current density of the sintering plating process and the current density of the coating plating process were appropriately changed from those shown in Table 1, and various samples with different characteristics of the roughened surface were cut.

(6)防鏽處理 於所得附有載體銅箔之粗糙化處理表面,進行鋅-鎳合金鍍敷處理及鉻酸鹽處理所成防鏽處理。首先,使用包含鋅濃度1g/L、鎳濃度2g/L及焦磷酸鉀濃度80g/L之溶液,以液溫40℃、電流密度0.5A/dm2 之條件,於粗糙化處理層及載體之表面,進行鋅-鎳合金鍍敷處理。接著,使用包含鉻酸1g/L之水溶液、以pH12、電流密度1A/dm2 之條件,於進行鋅-鎳合金鍍敷處理之表面,進行鉻酸鹽處理。(6) Antirust Treatment The roughened surface of the obtained copper foil with a carrier was subjected to zinc-nickel alloy plating treatment and chromate treatment to obtain an antirust treatment. First, use a solution containing zinc concentration of 1 g/L, nickel concentration of 2 g/L and potassium pyrophosphate concentration of 80 g/L, under the conditions of liquid temperature of 40 °C and current density of 0.5 A/dm 2 , between the roughened layer and the carrier. The surface is plated with zinc-nickel alloy. Next, using an aqueous solution containing 1 g/L of chromic acid, under the conditions of pH 12 and current density of 1 A/dm 2 , the surface subjected to the zinc-nickel alloy plating treatment was subjected to chromate treatment.

(7)矽烷耦合劑處理 將包含市售矽烷耦合劑之水溶液,吸附於附有載體銅箔之粗糙化處理銅箔側之表面,經由電熱器蒸發水分,進行矽烷耦合劑處理。此時,矽烷耦合劑處理係不在載體側進行。(7) Silane coupling agent treatment An aqueous solution containing a commercially available silane coupling agent was adsorbed on the surface of the roughened copper foil side with the carrier copper foil, and the water was evaporated through an electric heater to perform the silane coupling agent treatment. At this time, the silane coupling agent treatment is not performed on the carrier side.

(8)評估 對於如此所得附有載體銅箔,將各種特性之評估如以下加以進行。(8) Evaluation About the copper foil with a carrier obtained in this way, the evaluation of various characteristics was performed as follows.

(8a)粗糙化處理面之表面性狀參數 經由使用雷射顯微鏡(Olympus股份有限公司製,OLS5000)之表面粗糙度解析,依據ISO25178進行粗糙化處理銅箔之粗糙化處理面之測定。具體而言,將粗糙化處理銅箔之粗糙化處理面之面積16384μm2 之領域之表面輪廓,在於上記雷射顯微鏡,以數值孔徑(N.A.)0.95之100倍透鏡加以測定。對於所得粗糙化處理面之表面輪廓,進行除去雜訊及1次線形面傾斜補正後,經由表面性狀解析,實施最大高度Sz、界面之展開面積比Sdr、表面性狀之縱橫比Str、核心部之階層差Sk及峰之頂點密度Spd之測定。此時,Sz、Sdr、Str及Sk之測定係令S濾波器所成截止波長為0.55μm,L濾波器所成截止波長為10μm加以計測。另一方面,Spd之測定係令S濾波器所成截止波長為3μm,L濾波器所成截止波長為10μm加以計測。結果係如表1所示。(8a) Surface property parameters of the roughened surface The roughened surface of the roughened copper foil was measured in accordance with ISO25178 through surface roughness analysis using a laser microscope (manufactured by Olympus Co., Ltd., OLS5000). Specifically, the surface profile of the area of the roughened surface of the roughened copper foil with an area of 16384 μm 2 was measured with a 100-fold lens with a numerical aperture (NA) of 0.95 in the above-mentioned laser microscope. The surface profile of the roughened surface obtained was subjected to noise removal and primary linear surface inclination correction, and then, through the analysis of the surface properties, the maximum height Sz, the developed area ratio Sdr of the interface, the aspect ratio Str of the surface properties, and the ratio of the core portion were performed. Determination of gradation difference Sk and peak vertex density Spd. At this time, the measurement of Sz, Sdr, Str, and Sk was performed with the cutoff wavelength of the S filter set to 0.55 μm and the cutoff wavelength of the L filter to be 10 μm. On the other hand, for the measurement of Spd, the cutoff wavelength of the S filter was 3 μm, and the cutoff wavelength of the L filter was 10 μm. The results are shown in Table 1.

(8b)電路形成性(蝕刻性評估) 使用所得附有載體銅箔,製作評估用層積體。即,如圖5所示,於絕緣樹脂基板111之表面,隔著預浸體112(三菱氣體化學股份有限公司製,GHPL-830NSF,厚度0.1mm),層積附有載體銅箔之粗糙化處理銅箔110,以壓力4.0MPa、溫度220℃,熱壓接90分鐘後,剝離載體(未圖示),得做為評估用層積體114之覆銅層壓板。如圖5所示例中,粗糙化處理銅箔110係於表面具備粗糙化粒子110a。然而,蝕刻性評估係經由極薄銅箔之厚度,變動必要之蝕刻量。為此,如圖5所示,使評估用層積體114之粗糙化處理銅箔110之厚度成為相當於1.5μm(不包含粗糙化粒子110a之厚度),對於評估用層積體114,依需要,進行半蝕刻所成厚度之減低以至於硫酸銅鍍敷所成厚度之增大。對於將此粗糙化處理銅箔110之厚度調整成1.5μm之評估用層積體114,以硫酸-過氧化氫系蝕刻液,進行每0.1μm程度之蝕刻,計測表面之銅(包含粗糙化粒子110a)完全消失之量(深度)。計測係以光學顯微鏡(500倍)加以確認進行。更詳細而言,重覆每當蝕刻0.1μm,以光學顯微鏡確認銅之有無之作業,將經由(蝕刻之次數)×0.1μm所得之值(μm),做為蝕刻性之指標加以使用。例如蝕刻性為2.5μm係意味進行25次0.1μm之蝕刻,以光學顯微鏡不檢出殘留銅之情形(即0.1μm×25次=2.5μm)。即,此值愈小,意味可以少較少之次數之蝕刻,除去表面之銅。即,此值愈小,意味蝕刻性良好。將計測之蝕刻量,如以下之基準評量評估,在評估A~C之任一之時,判定為合格。結果係如表1所示。 <蝕刻性評估基準> - 評估A:必要之蝕刻量為2.3μm以下 ‐ 評估B:必要之蝕刻量為超過2.3μm,2.5μm以下 ‐ 評估C:必要之蝕刻量為超過2.5μm,2.7μm以下 ‐ 評估D:必要之蝕刻量為超過2.7μm(8b) Circuit Formability (Etchability Evaluation) Using the obtained copper foil with a carrier, a laminate for evaluation was produced. That is, as shown in FIG. 5 , on the surface of the insulating resin substrate 111, a roughening copper foil with a carrier is laminated via a prepreg 112 (manufactured by Mitsubishi Gas Chemical Co., Ltd., GHPL-830NSF, thickness 0.1 mm). The copper foil 110 was processed, and after thermocompression bonding at a pressure of 4.0 MPa and a temperature of 220° C. for 90 minutes, the carrier (not shown) was peeled off to obtain a copper-clad laminate for the evaluation laminate 114 . As shown in FIG. 5 , the roughened copper foil 110 includes roughened particles 110a on the surface. However, the etching property is evaluated by changing the required etching amount through the thickness of the ultra-thin copper foil. Therefore, as shown in FIG. 5 , the thickness of the roughened copper foil 110 of the laminated body 114 for evaluation is set to be equivalent to 1.5 μm (the thickness of the roughened particles 110 a is not included). It is necessary to perform a reduction in thickness by half etching and an increase in thickness by copper sulfate plating. The thickness of the roughened copper foil 110 was adjusted to 1.5 μm for the evaluation layer 114, and the etching solution was performed with sulfuric acid-hydrogen peroxide-based etching solution for every 0.1 μm, and the copper (including roughened particles) on the surface was measured. 110a) The amount (depth) of complete disappearance. The measurement was carried out for confirmation with an optical microscope (500 times). More specifically, the operation of confirming the presence or absence of copper with an optical microscope was repeated every time 0.1 μm was etched, and the value (μm) obtained by (number of etchings)×0.1 μm was used as an index of etchability. For example, an etching property of 2.5 μm means that 25 times of etching of 0.1 μm is performed, and the remaining copper is not detected by an optical microscope (ie, 0.1 μm×25 times=2.5 μm). That is, the smaller this value is, the less number of times the etching can be performed, the copper on the surface can be removed. That is, the smaller the value, the better the etching properties. The measured etching amount was evaluated as the following standard evaluation, and it was judged as acceptable when any of A to C was evaluated. The results are shown in Table 1. <Etchability Evaluation Criteria> - Evaluation A: The necessary etching amount is 2.3 μm or less ‐ Evaluation B: The necessary etching amount is more than 2.3μm and less than 2.5μm ‐ Evaluation C: The necessary etching amount is more than 2.5μm and less than 2.7μm - Evaluation D: The necessary etching amount is more than 2.7μm

(8c)鍍敷電路密合性(剪切強度) 於上述評估用層積體,貼合乾式薄膜,進行曝光及顯影。於以顯影之乾式薄膜遮蔽之層積體,以圖案鍍敷,析出厚度14μm之銅層後,剝離乾式薄膜。蝕刻以硫酸-過氧化氫系蝕刻液顯出之銅部分,製作高度15μm、寬度10μm、長度200μm之剪切強度測定用電路樣本(形成圖6所示電路136之層積體134)。使用接合強度試驗機(Nordson DAGE公司製,4000Plus Bondtester),測定從剪切強度測定用電路樣本之旁邊壓偏電路136時之剪切強度。即,如圖6所示,將形成電路136之層積體134,載置於可動平台132上,每一平台132向圖中箭頭方向移動,於預先固定之檢測器138,按壓電路136,對於電路136之側面,賦予橫方向之力,使電路136向橫方向偏移,將此時之力(gf)於檢測器138測定,做為剪切強度加以採用。此時,測試種類係破壞試驗,以測試高度5μm、下降速度0.050mm/s、測試速度200μm/s、工具移動量0.05mm、破壞辨識點10%之條件,進行測定。將所得剪切強度,如以下之基準評量評估,在評估A~C之任一之時,判定為合格。結果係如表1所示。 <剪切強度評估基準> ‐ 評估A:剪切強度為13.50gf以上 ‐ 評估B:剪切強度為12.50gf以上不足13.50gf ‐ 評估C:剪切強度為12.00gf以上不足12.50gf ‐ 評估D:剪切強度為不足12.00gf(8c) Plated circuit adhesion (shear strength) A dry film was bonded to the above-mentioned laminate for evaluation, and exposure and development were performed. After the layered body masked with the developed dry film was plated with a pattern to deposit a copper layer with a thickness of 14 μm, the dry film was peeled off. The copper portion exposed by the sulfuric acid-hydrogen peroxide etchant was etched to prepare a circuit sample for shear strength measurement with a height of 15 μm, a width of 10 μm and a length of 200 μm (a laminate 134 of the circuit 136 shown in FIG. 6 was formed). The shear strength when the circuit 136 was biased from the side of the circuit sample for shear strength measurement was measured using a bond strength tester (Nordson DAGE, 4000Plus Bondtester). That is, as shown in FIG. 6, the laminated body 134 forming the circuit 136 is placed on the movable platform 132, each platform 132 moves in the direction of the arrow in the figure, and the pre-fixed detector 138 is pressed against the circuit 136. A lateral force is applied to the side surface of the circuit 136 to deflect the circuit 136 in the lateral direction, and the force (gf) at this time is measured by the detector 138 and used as the shear strength. At this time, the test type was a failure test, and the measurement was carried out under the conditions of a test height of 5 μm, a descending speed of 0.050 mm/s, a test speed of 200 μm/s, a tool movement amount of 0.05 mm, and a failure identification point of 10%. The obtained shear strength was evaluated as the following standard evaluation, and it was judged as pass when any one of A to C was evaluated. The results are shown in Table 1. <Shear Strength Evaluation Criteria> ‐ Evaluation A: Shear strength is 13.50gf or more ‐ Evaluation B: Shear strength is 12.50gf or more and less than 13.50gf ‐ Evaluation C: Shear strength is 12.00gf or more and less than 12.50gf ‐ Evaluation D: Shear strength is less than 12.00gf

例8(比較) 下述a)~c)之外係與例1同樣進行附有載體銅箔之製作及評估。結果係如表1所示。 a) 將載體之準備如以下所示手序進行。 b) 代替載體之電極面,於載體之析出面,將剝離層、補助金屬層及極薄銅箔,以此順序形成。 c) 代替燒結鍍敷工程及被覆鍍敷工程,經由以下所示黑色鍍敷工程,進行極薄銅箔之粗糙化處理。Example 8 (comparison) The production and evaluation of the copper foil with a carrier were carried out in the same manner as in Example 1 except for the following a) to c). The results are shown in Table 1. a) Prepare the carrier as shown below. b) Instead of the electrode surface of the carrier, on the precipitation surface of the carrier, the peeling layer, the auxiliary metal layer and the ultra-thin copper foil are formed in this order. c) In place of the sintering plating process and the covering plating process, the ultra-thin copper foil is roughened through the black plating process shown below.

(載體之準備) 做為銅電解液,使用以下所示組成之硫酸酸性硫酸銅溶液、於陰極使用表面粗糙度Ra為0.20μm之鈦製電極,於陽極使用DSA(尺寸安定性陽極),以溶液溫度45℃、電流密度55A/dm2 電解,將厚度12μm之電解銅箔,獲得做為載體。 <硫酸酸性硫酸銅溶液之組成> ‐ 銅濃度:80g/L ‐ 硫酸濃度:140g/L ‐ 雙(3-磺酸丙基)二苯硫醚濃度:30mg/L - 二烯丙基二甲基氯化銨聚合物濃度:50mg/L ‐ 氯濃度:40mg/L(Preparation of carrier) As the copper electrolyte, a sulfuric acid copper sulfate solution with the composition shown below was used, a titanium electrode with a surface roughness Ra of 0.20 μm was used for the cathode, and DSA (dimensionally stable anode) was used for the anode. The solution temperature was 45°C and the current density was 55A/dm 2 for electrolysis, and an electrolytic copper foil with a thickness of 12 μm was obtained as a carrier. <The composition of sulfuric acid copper sulfate solution> - Copper concentration: 80g/L - Sulfuric acid concentration: 140g/L - Bis(3-sulfopropyl)diphenyl sulfide concentration: 30mg/L - Diallyldimethyl Ammonium Chloride Polymer Concentration: 50mg/L ‐ Chlorine Concentration: 40mg/L

(黑色鍍敷工程) 對於極薄銅箔之表面,使用以下所示組成之黑色粗糙化用銅電解溶液,以溶液溫度30℃,電流密度50A/dm2 ,時間4sec之條件電解,進行黑色粗糙化。 <黑色粗糙化用銅電解溶液之組成> ‐ 銅濃度:13g/L ‐ 硫酸濃度:70g/L ‐ 氯濃度:35mg/L ‐ 聚丙烯酸鈉濃度:400ppm(Black Plating Process) For the surface of the ultra-thin copper foil, use the copper electrolytic solution for black roughening with the composition shown below , and conduct electrolysis under the conditions of solution temperature 30°C, current density 50A/dm 2 , and time 4sec to carry out black roughening change. <Composition of copper electrolytic solution for black roughening> - Copper concentration: 13g/L - Sulfuric acid concentration: 70g/L - Chlorine concentration: 35mg/L - Sodium polyacrylate concentration: 400ppm

Figure 02_image001
Figure 02_image001

10:極薄銅箔 11:絕緣樹脂基板 11a:基底基材 11b:下層電路 12:預浸體 13:塗裝層 14:貫穿孔 15:化學鍍銅 16:乾式薄膜 17:電性鍍銅 17a:配線部分 18:配線 110:粗糙化處理銅箔 110a:粗糙化粒子 111:絕緣樹脂基板 112:預浸體 114:評估用層積體 132:可動平台 134:層積體 136:電路 138:檢測器10: Very thin copper foil 11: Insulating resin substrate 11a: Base Substrate 11b: Lower circuit 12: Prepreg 13: Coating layer 14: Through hole 15: Electroless copper plating 16: Dry film 17: Electrical copper plating 17a: Wiring part 18: Wiring 110: Roughened copper foil 110a: Roughened particles 111: Insulating resin substrate 112: Prepreg 114: Laminates for Evaluation 132: Movable Platform 134: Laminate 136: Circuit 138: Detector

[圖1]為說明MSAP法之工程之流程圖,顯示前半之工程(工程(a)~(d))之圖。 [圖2]為說明MSAP法之工程之流程圖,顯示後半之工程(工程(e)~(g))之圖。 [圖3]依據ISO25178決定之負荷曲線及為說明負荷面積率之圖。 [圖4]分離依據ISO25178決定之突出峰部與核心部之負荷面積率Smr1、分離之突出谷部與核心部之負荷面積率Smr2、及為說明核心部之階層差Sk之圖。 [圖5]顯示進行電路形成性(蝕刻性評估)之蝕刻前之評估用層積體之一例的模式剖面圖。 [圖6]為說明剪切強度之測定方法之模式圖。[Fig. 1] is a flow chart illustrating the process of the MSAP method, showing the first half of the process (process (a) to (d)). [Fig. 2] is a flow chart for explaining the process of the MSAP method, showing the process of the latter half (process (e) to (g)). [Fig. 3] A load curve determined in accordance with ISO25178 and a diagram illustrating the load area ratio. Fig. 4 is a diagram illustrating the load area ratio Smr1 of the protruding peak portion and the core portion determined in accordance with ISO25178, the load area ratio Smr2 of the separated protruding valley portion and the core portion, and the level difference Sk of the core portion. [ Fig. 5] Fig. 5 is a schematic cross-sectional view showing an example of a laminated body for evaluation before the circuit formability (etchability evaluation) is etched. [ Fig. 6] Fig. 6 is a schematic diagram illustrating a method of measuring shear strength.

Claims (11)

一種粗糙化處理銅箔,係於至少一側具有粗糙化處理面, 前述粗糙化處理面係依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之界面之展開面積比Sdr為3.50%以上12.00%以下,依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之核心部之階層差Sk為0.15μm以上0.35μm以下。A roughened copper foil, which has a roughened surface on at least one side, The above-mentioned roughened surface is based on ISO25178, and the developed area ratio Sdr of the interface measured under the conditions of the cutoff wavelength of S filter of 0.55μm and the cutoff wavelength of L filter of 10μm is 3.50% or more and 12.00% or less. According to ISO25178, The level difference Sk of the core portion measured under the conditions of the cutoff wavelength of 0.55 μm formed by the S filter and the cutoff wavelength of 10 μm formed by the L filter was 0.15 μm or more and 0.35 μm or less. 如請求項1記載之粗糙化處理銅箔,其中,前述核心部之階層差Sk(μm)相對於前述界面之展開面積比Sdr(%)之比之Sk/Sdr為0.038以上0.050以下。The roughened copper foil according to claim 1, wherein the ratio Sk/Sdr of the level difference Sk (μm) of the core portion to the developed area ratio Sdr (%) of the interface is 0.038 or more and 0.050 or less. 如請求項1或2記載之粗糙化處理銅箔,其中,前述粗糙化處理面係依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之最大高度Sz(μm)及前述核心部之階層差Sk(μm)積之Sz×Sk為0.25以上0.50以下。The roughened copper foil according to claim 1 or 2, wherein the roughened surface is based on ISO25178, and the maximum value measured under the conditions of a cutoff wavelength of 0.55 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter The Sz×Sk of the product of the height Sz (μm) and the step difference Sk (μm) of the core portion is 0.25 or more and 0.50 or less. 如請求項1或2記載之粗糙化處理銅箔,其中,前述界面之展開面積比Sdr為4.50%以上8.50%以下。The roughened copper foil according to claim 1 or 2, wherein the developed area ratio Sdr of the interface is 4.50% or more and 8.50% or less. 如請求項1或2記載之粗糙化處理銅箔,其中,前述粗糙化處理面係依據ISO25178,在S濾波器所成截止波長3.0μm及L濾波器所成截止波長10μm之條件下測定之峰之頂點密度Spd為2.00×104 mm-2 以上3.00×104 mm-2 以下。The roughened copper foil according to claim 1 or 2, wherein the roughened surface is based on ISO25178, and the peaks measured under the conditions of a cutoff wavelength of 3.0 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter The vertex density Spd is 2.00×10 4 mm -2 or more and 3.00×10 4 mm -2 or less. 如請求項1或2記載之粗糙化處理銅箔,其中,前述粗糙化處理面係依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之表面性狀之縱橫比Str為0.2以上0.5以下。The roughened copper foil according to claim 1 or 2, wherein the roughened surface is a surface measured under the conditions of a cutoff wavelength of 0.55 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter in accordance with ISO25178 The aspect ratio Str of the property is 0.2 or more and 0.5 or less. 如請求項1或2記載之粗糙化處理銅箔,其中,前述粗糙化處理面係依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之最大高度Sz為1.6μm以下。The roughened copper foil according to claim 1 or 2, wherein the roughened surface is based on ISO25178, and the maximum value measured under the conditions of a cutoff wavelength of 0.55 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter The height Sz is 1.6 μm or less. 如請求項1或2記載之粗糙化處理銅箔,其中,於前述粗糙化處理面更具備防鏽處理層及/或矽烷耦合劑層。The roughened copper foil according to claim 1 or 2, further comprising a rust-preventive treatment layer and/or a silane coupling agent layer on the roughened surface. 一種附有載體銅箔,其特徵係具備載體、設於該載體上之剝離層、和以前述粗糙化處理面為外側之方式設置於該剝離層上之如請求項1~8之任一項記載之粗糙化處理銅箔。A copper foil with a carrier, which is characterized by having a carrier, a peeling layer provided on the carrier, and any one of claims 1 to 8 provided on the peeling layer with the aforementioned roughened surface as the outer side The roughened copper foil described. 一種覆銅層壓板,其特徵係具備如請求項1~8之任一項記載之粗糙化處理銅箔。A copper-clad laminate characterized by having the roughened copper foil according to any one of claims 1 to 8. 一種印刷配線板,其特徵係具備如請求項1~8之任一項記載之粗糙化處理銅箔。A printed wiring board comprising the roughened copper foil according to any one of Claims 1 to 8.
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WO2022153580A1 (en) * 2021-01-15 2022-07-21 Jx金属株式会社 Surface-treated copper foil, copper-clad laminate, and printed wiring board
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CN112424399B (en) * 2018-08-10 2023-07-25 三井金属矿业株式会社 Roughened copper foil, copper foil with carrier, copper-clad laminate, and printed wiring board

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TWI756039B (en) 2022-02-21
JPWO2021157362A1 (en) 2021-08-12

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