TWI756038B - Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board - Google Patents

Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board Download PDF

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TWI756038B
TWI756038B TW110103167A TW110103167A TWI756038B TW I756038 B TWI756038 B TW I756038B TW 110103167 A TW110103167 A TW 110103167A TW 110103167 A TW110103167 A TW 110103167A TW I756038 B TWI756038 B TW I756038B
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copper foil
roughened
filter
carrier
less
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TW202134482A (en
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細川眞
髙梨哲聡
溝口美智
平岡慎哉
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日商三井金屬鑛業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • C25D7/0614Strips or foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2222/00Aspects relating to chemical surface treatment of metallic material by reaction of the surface with a reactive medium
    • C23C2222/20Use of solutions containing silanes

Abstract

於覆銅層壓板之加工以至於印刷配線板之製造中,提供可兼顧優異高頻特性與高剪切強度之粗糙化處理銅箔。此粗糙化處理銅箔係於至少一方之側,具有粗糙化處理面。粗糙化處理面係依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之界面之展開面積比Sdr為0.50%以上7.00%以下,此粗糙化處理銅箔係依據ISO25178,在S濾波器所成截止波長3.0μm及L濾波器所成截止波長10μm之條件下測定之峰之頂點密度Spd為2.00×104 mm-2 以上3.30×104 mm-2 以下。In the processing of copper clad laminates and the manufacture of printed wiring boards, it provides roughened copper foils that can take into account both excellent high-frequency characteristics and high shear strength. This roughened copper foil has a roughened surface on at least one side. The roughened surface is based on ISO25178, and the developed area ratio Sdr of the interface measured under the conditions of the cut-off wavelength of S filter of 0.55 μm and the cut-off wavelength of L filter of 10 μm is 0.50% or more and 7.00% or less. This roughening treatment The copper foil is based on ISO25178, and the peak vertex density Spd measured under the conditions of the cut-off wavelength of S filter of 3.0 μm and the cut-off wavelength of L filter of 10 μm is 2.00×10 4 mm -2 or more 3.30×10 4 mm -2 the following.

Description

粗糙化處理銅箔、附有載體銅箔、覆銅層壓板及印刷配線板Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board

本發明係有關粗糙化處理銅箔、附有載體銅箔、覆銅層壓板及印刷配線板。The present invention relates to a roughened copper foil, a copper foil with a carrier, a copper-clad laminate and a printed wiring board.

近年以來,做為適用於電路之微細化之印刷配線板之製造工法,MSAP(改良型半加成法)法被廣為採用。MSAP法係適用於形成極為微細之電路的手法,為了活化該特徵,使用附有載體銅箔加以進行。例如,如圖1及2所示,將極薄銅箔10,於基底基材11a,在具備下層電路11b之絕緣樹脂基板11上,使用預浸體12與塗裝層13,加壓密接(工程(a)),剝去載體(未圖示)後,依需要經由雷射穿孔,形成貫穿孔14(工程(b))。接著,施以化學鍍銅15(工程(c))之後,經由使用乾式薄膜16之曝光及顯影,以特定之圖案遮蔽(工程(d)),施以電性鍍銅17(工程(e))。除去乾式薄膜16,形成配線部分17a之後(工程(f)),將相互鄰接之配線部分17a與17b間之不需極薄銅箔等,遍及於此等之厚度整體,經由蝕刻除去(工程(g)),得以特定之圖案形成之配線18。在此,欲提升電路-基板間之物理性密合性,於極薄銅箔10之表面,一般進行粗糙化處理。In recent years, the MSAP (modified semi-additive method) method has been widely used as a manufacturing method of printed wiring boards suitable for miniaturization of circuits. The MSAP method is a method suitable for forming extremely fine circuits, and in order to activate this feature, it is performed using copper foil with a carrier. For example, as shown in FIGS. 1 and 2, an ultra-thin copper foil 10 is pressure-adhered ( Process (a)), after peeling off the carrier (not shown), through laser perforation as required to form through holes 14 (process (b)). Next, after applying electroless copper plating 15 (process (c)), through exposure and development using dry film 16 , masking with a specific pattern (process (d)), and applying electroless copper plating 17 (process (e) ). After removing the dry film 16 and forming the wiring portion 17a (process (f)), the unnecessary ultra-thin copper foil and the like between the adjacent wiring portions 17a and 17b are removed by etching over the entire thickness of these (process (process (process)). g)), the wiring 18 can be formed in a specific pattern. Here, in order to improve the physical adhesion between the circuit and the substrate, the surface of the ultra-thin copper foil 10 is generally roughened.

實際上,提案有數個MSAP法等所進行之微細電路形成性優異之附有載體銅箔。例如,於專利文獻1(國際公開第2016/117587號)中,揭示具備剝離層側之面之表面尖峰間平均距離為20μm以下,且剝離層與相反側之面之波動之最大高低差為1.0μm以下之極薄銅箔的附有載體銅箔,根據相關形態時,可兼顧微細電路形成性及雷射加工性。又,於專利文獻2(日本特開2018-26590號公報),揭示提升微細電路形成性為目的,依據極薄銅層側表面之ISO25178之最大峰高度Sp與突出峰部高度Spk之比Sp/Spk為3.271以上10.739以下之附有載體銅箔。In fact, several copper foils with a carrier that are excellent in fine circuit formability by the MSAP method or the like have been proposed. For example, in Patent Document 1 (International Publication No. 2016/117587), it is disclosed that the average distance between the surface peaks of the surface having the peeling layer side is 20 μm or less, and that the maximum height difference of the fluctuation between the peeling layer and the surface on the opposite side is 1.0 The copper foil with a carrier of the ultra-thin copper foil of μm or less can achieve both the fine circuit formability and the laser processability according to the relevant form. In addition, in Patent Document 2 (Japanese Patent Laid-Open No. 2018-26590), it is disclosed that the ratio Sp/ Copper foil with carrier with Spk of 3.271 or more and 10.739 or less.

然而,伴隨近年之攜帶用電子機器等之高機能化,進行大量之資訊之高速處理,信號之高頻化,有適於高頻用途之印刷配線板之要求。如此高頻用印刷配線板中,為了將高頻信號不下降品質地進行傳送,期望有傳送損失之減低。印刷配線板係雖具備加工於配線圖案之銅箔與絕緣樹脂基材者,但傳送損失係主要為起因於銅箔之導體損失、和起因於絕緣樹脂基材之介電體損失。However, with the high-performance of portable electronic devices in recent years, high-speed processing of a large amount of information, and high frequency of signals, there is a demand for printed wiring boards suitable for high-frequency applications. In such a high-frequency printed wiring board, in order to transmit a high-frequency signal without degrading the quality, it is desired to reduce the transmission loss. Although the printed wiring board has copper foil and insulating resin base material processed on the wiring pattern, the transmission loss is mainly caused by the conductor loss caused by the copper foil and the dielectric loss caused by the insulating resin base material.

此部分係已知有傳送損失之減低為目的之粗糙化處理銅箔。例如,專利文獻3(日本特許第6462961號公報)中,揭示關於於銅箔之至少單面,依粗糙化處理層、防鏽處理層及矽烷耦合層之順序層積之表面處理銅箔中,從矽烷耦合層之表面測定之界面之展開面積比Sdr為8%以上140%以下,二次平均平方根表面斜率Sdq為25°以上70°以下,及表面性狀之縱橫比Str為0.25以上0.79以下者。根據相關表面處理銅箔時,可進行高頻電性信號之傳送損失為少,且具有回流焊接時之優異密合性之印刷配線板之製造。 [先前技術文獻] [專利文獻]This part is known to be roughened copper foil for the purpose of reducing transmission loss. For example, Patent Document 3 (Japanese Patent No. 6462961) discloses that on at least one side of the copper foil, a surface-treated copper foil in which a roughening treatment layer, an anti-rust treatment layer and a silane coupling layer are laminated in this order, The developed area ratio Sdr of the interface measured from the surface of the silane coupling layer is 8% or more and 140% or less, the quadratic mean square root surface slope Sdq is 25° or more and 70° or less, and the aspect ratio Str of the surface features is 0.25 or more and 0.79 or less. . When the copper foil is treated according to the relevant surface, it is possible to manufacture a printed wiring board with low transmission loss of high-frequency electrical signals and excellent adhesion during reflow soldering. [Prior Art Literature] [Patent Literature]

[專利文獻1] 國際特公開第2016/117587號 [專利文獻2] 日本特開2018-26590號公報 [專利文獻3] 日本特許第6462961號公報[Patent Document 1] International Patent Publication No. 2016/117587 [Patent Document 2] Japanese Patent Application Laid-Open No. 2018-26590 [Patent Document 3] Japanese Patent No. 6462961

如上所述,從高頻傳送之觀點視之,做為形成流傳信號之電路配線之材料,有傳送損失少之銅箔(即高頻特性優異之銅箔)之需求。經由銅箔之平滑化及粗糙化粒子之微小化,雖可抑制傳送損失,銅箔與基板樹脂等之物理性密合力會下降。As described above, from the viewpoint of high-frequency transmission, there is a demand for copper foil with low transmission loss (ie, copper foil with excellent high-frequency characteristics) as a material for forming circuit wiring for transmitting signals. The smoothing of the copper foil and the miniaturization of the roughened particles can suppress the transmission loss, but the physical adhesion between the copper foil and the substrate resin and the like is lowered.

在,對於電路與基板之物理密接指標之一個,有剪切強度(Share strength),為了提升電路-基板間之物理密合性(以下,有單純稱為電路密合性之情形),需要將剪切強度保持在一定以上。但是,為了確保一定以上之剪切強度,不得不使銅箔之粗糙化粒子變大,會有難以達成高頻特性與電路密合性兼顧之問題。此部分,如上所述,於專利文獻3中,雖揭示達成高頻特性與電路密合性兼顧之表面處理銅箔,但為了得更優異之高頻特性,在使用更平滑之銅箔之時,亦要求確保電路密合性。One of the physical adhesion indexes between the circuit and the substrate is the shear strength (Share strength). Shear strength is maintained above a certain level. However, in order to ensure the shear strength above a certain level, the roughening particles of the copper foil have to be increased, and there is a problem that it is difficult to achieve both high-frequency characteristics and circuit adhesion. In this part, as described above, Patent Document 3 discloses a surface-treated copper foil that achieves both high-frequency characteristics and circuit adhesion. However, in order to obtain more excellent high-frequency characteristics, when a smoother copper foil is used , it is also required to ensure circuit tightness.

本發明人等係對於現今粗糙化處理銅箔中,發現經由將規定於ISO25178之界面之展開面積比Sdr及峰之頂點密度Spd,賦予控制於各別特定之範圍之表面輪廓,於覆銅層壓板之加工以至於印刷配線板之製造中,可兼顧優異高頻特性與高剪切強度。The inventors of the present invention have found that, for the current roughened copper foil, the developed area ratio Sdr of the interface and the peak vertex density Spd specified in ISO25178 can give a surface profile controlled in a specific range, and the copper clad laminate can be used. The processing and even the manufacture of printed wiring boards can achieve both excellent high frequency characteristics and high shear strength.

因此,本發明之目的係於覆銅層壓板之加工以至於印刷配線板之製造中,提供可兼顧優異高頻特性與高剪切強度之粗糙化處理銅箔。Therefore, the object of the present invention is to provide a roughened copper foil that can achieve both excellent high-frequency characteristics and high shear strength in the processing of copper-clad laminates and even in the manufacture of printed wiring boards.

根據本發明之一形態時,提供於至少一方之側,具有粗糙化處理面之粗糙化處理銅箔中, 前述粗糙化處理面係依據ISO25178,在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之界面之展開面積比Sdr為0.50%以上7.00%以下,依據ISO25178,在S濾波器所成截止波長3.0μm及L濾波器所成截止波長10μm之條件下測定之峰之頂點密度Spd為2.00×104 mm-2 以上3.30×104 mm-2 以下之粗糙化處理銅箔。According to one aspect of the present invention, it is provided on at least one side of a roughened copper foil having a roughened surface, wherein the roughened surface is based on ISO25178, with a cutoff wavelength of 0.55 μm in an S filter and an L filter. The developed area ratio Sdr of the interface measured under the condition of the cut-off wavelength of 10μm formed by the filter is 0.50% or more and less than 7.00%. According to ISO25178, under the conditions of the cut-off wavelength of S filter of 3.0μm and the cut-off wavelength of L filter of 10μm The peak density Spd of the measured peak is a roughened copper foil of 2.00×10 4 mm −2 or more and 3.30×10 4 mm −2 or less.

根據本發明之其他之一形態,提供具備載體、和設於該載體上之剝離層、和於該剝離層上,使前述粗糙化處理面向外側設置之前述粗糙化處理銅箔的附有載體銅箔。According to another aspect of the present invention, there is provided a copper with a carrier including a carrier, a peeling layer provided on the carrier, and the roughened copper foil provided on the peeling layer with the roughened surface facing outward. foil.

根據本發明之另一其他之形態時,提供具備前述粗糙化處理銅箔的覆銅層壓板。According to another aspect of this invention, the copper clad laminate provided with the said roughening process copper foil is provided.

根據本發明之另一其他之形態時,提供具備前述粗糙化處理銅箔的印刷配線板。According to another aspect of this invention, the printed wiring board provided with the said roughening process copper foil is provided.

定義definition

將特定本發明之所使用之用語以至於參數之定義,顯示於如下。Definitions of terms and parameters used to specify the present invention are shown below.

於本說明書中,「界面之展開面積比Sdr」係表示依據ISO25178所測定之定義領域之展開面積(表面積),對於定義領域之面積而言,增大多少的參數。然而,本說明書中,將界面之展開面積比Sdr,做為表面積之增加份(%)加以表示者。此值愈小,顯示愈接近平坦之表面形狀,完全平坦之表面之Sdr係成為0%。另一方面,此值愈大,顯示為凹凸愈多之表面形狀。例如,表面之Sdr為40%之時,此表面係顯示從完全平坦之表面增加40%表面積。In this specification, the "expanded area ratio Sdr of the interface" is a parameter indicating how much the expanded area (surface area) of the defined area measured in accordance with ISO25178 increases with respect to the area of the defined area. However, in this specification, the developed area ratio Sdr of the interface is expressed as an increase (%) of the surface area. The smaller the value, the closer to the flat surface shape is displayed, and the Sdr of the completely flat surface becomes 0%. On the other hand, the larger this value is, the more uneven surface shape is displayed. For example, when the Sdr of a surface is 40%, the surface shows a 40% increase in surface area from a completely flat surface.

本說明書中,「峰之頂點密度Spd」係表示依據ISO25178所測定之每單位面積之峰頂點之數的參數,僅較輪廓曲面之最大振幅之5%為大之峰頂點進行計算者。此值為大時,則顯示與其他物體之接觸點之數為多。In this specification, "peak apex density Spd" refers to a parameter indicating the number of peak apexes per unit area measured in accordance with ISO25178, and is calculated only as a peak apex larger than 5% of the maximum amplitude of the contour surface. When this value is large, the number of contact points with other objects is displayed.

本說明書中,「面之負荷曲線」(以下,單純稱「負荷曲線」)係表示依據ISO25178測定之負荷面積率為0%至100%的高度的曲線。負荷面積率係如圖3所示,表示某高度c以上之領域之面積的參數。高度c之負荷面積率係相當於圖3之Smr(c)。如圖4所示,將負荷面積率為0%沿著負荷曲線,令負荷面積率之差為40%所拉出負荷曲線之破線,從負荷面積率0%移動,將破線之傾斜最為緩和之位置,稱之為負荷曲線之中央部分。對於此中央部分,將使縱軸方向之偏差之二次方和成為最小之直線,稱之為等價直線。將含於等價直線之負荷面積率0%至100%之高度之範圍的部分,稱之為核心部。將較核心部高之部分,稱之為突出峰部,較核心部低之部分,稱之為突出谷部。In this specification, "surface load curve" (hereinafter, simply referred to as "load curve") refers to a curve with a load area ratio of 0% to 100% measured in accordance with ISO25178. The load area ratio is a parameter representing the area of the area above a certain height c, as shown in FIG. 3 . The load area ratio at the height c corresponds to Smr(c) in FIG. 3 . As shown in Fig. 4, the load area ratio is 0% along the load curve, and the difference between the load area ratios is 40%. The broken line of the load curve is drawn. Move from the load area ratio to 0%, and the inclination of the broken line is the most gentle. The position is called the central part of the load curve. For this central portion, a straight line that minimizes the sum of the squares of the deviations in the vertical axis direction is called an equivalent straight line. The part included in the range of the height of the load area ratio of the equivalent straight line from 0% to 100% is called the core part. The part higher than the core part is called the protruding peak part, and the part lower than the core part is called the protruding valley part.

本說明書中,「核心部之階層差Sk」係從依據ISO25178測定之核心部之最大高度,減去最小高度之值,如圖4所示,經由等價直線之負荷面積率0%與100%之高度差所算出之參數。In this specification, the "level difference Sk of the core part" is the value obtained by subtracting the minimum height from the maximum height of the core part measured according to ISO25178. The parameter calculated from the height difference.

於本說明書中,「最大高度Sz」係表示依據ISO25178所測定之表面之最高點至最低點之距離的參數。In this specification, "maximum height Sz" is a parameter representing the distance from the highest point to the lowest point of the surface measured in accordance with ISO25178.

於本說明書中,「表面性狀之縱橫比Str」係表示依據ISO25178所測定之表面性狀之向同性乃至於向異性的參數。Str係取0至1之範圍,通常Str>0.5顯示強向同性,相反地Str<0.3則顯示強向異性。In the present specification, "aspect ratio Str of surface properties" means a parameter of isotropy or anisotropy of surface properties measured in accordance with ISO25178. Str is in the range of 0 to 1, usually Str>0.5 shows strong isotropy, on the contrary Str<0.3 shows strong anisotropy.

界面之展開面積比Sdr、峰之頂點密度Spd、核心部之階層差Sk、最大高度Sz及表面性狀之縱橫比Str係可將粗糙化處理面之特定之測定面積(例如16384μm2 之二次元領域)之表面輪廓,經由市售雷射顯微鏡測定,各別加以算出。本說明書中,界面之展開面積比Sdr、核心部之階層差Sk、最大高度Sz、表面性狀之縱橫比Str之各數值係在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下所測定之值。又,本說明書中,峰之頂點密度Spd係之數值係在S濾波器所成截止波長3μm及L濾波器所成截止波長10μm之條件下所測定之值。The developed area ratio Sdr of the interface, the peak vertex density Spd, the level difference Sk of the core, the maximum height Sz and the aspect ratio Str of the surface properties are the specific measurement areas of the surface that can be roughened (for example, 16384 μm 2 The second dimension area) The surface profiles were measured by a commercially available laser microscope and calculated separately. In this specification, the values of the developed area ratio Sdr of the interface, the step difference Sk of the core, the maximum height Sz, and the aspect ratio Str of the surface features are set at the cutoff wavelength of 0.55 μm for the S filter and the cutoff wavelength for the L filter. The value measured under the condition of 10μm. In addition, in this specification, the numerical value of the peak vertex density Spd coefficient is a value measured under the conditions of a cutoff wavelength of 3 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter.

本說明書中,載體之「電極面」係指於載體製作時,與陰極接觸側之面。In this specification, the "electrode surface" of the carrier refers to the surface that is in contact with the cathode when the carrier is fabricated.

本說明書中,載體之「析出面」係指於載體製作時,析出電解銅側之面,即與陰極不接觸側之面。In this specification, the "precipitation surface" of the carrier refers to the surface on the side where the electrolytic copper is deposited during the manufacture of the carrier, that is, the surface on the side not in contact with the cathode.

粗糙化處理銅箔 本發明所成銅箔係粗糙化處理銅箔。此粗糙化處理銅箔係於至少一方之側,具有粗糙化處理面。此粗糙化處理面係界面之展開面積比Sdr為0.50%以上7.00%以下,峰之頂點密度Spd為2.00×104 mm-2 以上3.30×104 mm-2 以下。如此,於粗糙化處理銅箔中,將界面之展開面積比Sdr及峰之頂點密度Spd,經由賦予控制於各別特定之範圍之表面輪廓,於覆銅層壓板之加工以至於印刷配線板之製造中,可兼顧優異高頻特性與高剪切強度。Roughened copper foil The copper foil obtained by the present invention is a roughened copper foil. This roughened copper foil has a roughened surface on at least one side. The surface area ratio Sdr of the roughened interface is 0.50% or more and 7.00% or less, and the peak vertex density Spd is 2.00×10 4 mm -2 or more and 3.30×10 4 mm -2 or less. In this way, in the roughened copper foil, the developed area ratio Sdr of the interface and the peak density Spd of the peak are given to the surface profile controlled in each specific range, in the processing of the copper clad laminate and the production of the printed wiring board. , can achieve both excellent high frequency characteristics and high shear strength.

優異之高頻特性性與高剪切強度原本是難以兼顧的,此係如前所述,為得優異高頻特性,一般而言,要求使粗糙化粒子變小,另一方面,為提升電路之剪切強度,一般而言,則要求使粗糙化粒子變大。因此,剪切強度係非單純比例於從以往使用於評估之比表面積或粗糙化高度等,難以進行其控制。有關於此,本發明人發現為了取得高頻特性或剪切強度等之物性之相關,組合界面之展開面積比Sdr及峰之頂點密度Spd進行評估為有效的。具體而言,發現邊將界面之展開面積比Sdr控制在非常小之範圍,使粗糙化處理銅箔之表面顯著成為平滑者,經由將峰之頂點密度Spd控制於較小之值,雖然為高頻特性優異之微細表面,亦可獲得可確保高剪切強度之適切具有突起高度及突起密度,以及比表面積之粗糙化處理銅箔。即,首先,將界面之展開面積比Sdr控制於特定之範圍之時,粗糙化處理銅箔之表面之粗糙化粒子之大小之參差為大時,無法賦予剪切強度之極小粒子之數變多,由此峰之頂點密度Spd會有變大之傾向。對此,根據本發明之粗糙化處理銅箔,經由賦予剪切強度之適度大小之粗糙化粒子無參差下附著於粗糙化處理面,即使將界面之展開面積比Sdr控制於非常小之範圍之時,此峰之頂點密度Spd亦可控制於較小之值。如此,根據本發明之粗糙化處理銅箔時,可實現優異高頻特性及高剪切強度(更甚在剪切強度之觀點之高電路密合性)。Excellent high-frequency characteristics and high shear strength are originally difficult to achieve. As mentioned above, in order to obtain excellent high-frequency characteristics, generally, it is required to make the roughening particles smaller. On the other hand, in order to improve the circuit The shear strength, in general, is required to make the roughened particles larger. Therefore, the shear strength is not simply proportional to the specific surface area and roughening height, etc., which have been conventionally used for evaluation, and it is difficult to control the shear strength. In this regard, the present inventors found that it is effective to evaluate the expansion area ratio Sdr of the combined interface and the peak vertex density Spd in order to obtain the correlation of the physical properties such as high-frequency characteristics and shear strength. Specifically, it is found that the edge controls the interface expansion area ratio Sdr to a very small range, which makes the surface of the roughened copper foil remarkably smooth. By controlling the peak vertex density Spd to a small value, although the high frequency The fine surface with excellent characteristics can also obtain a roughened copper foil with suitable protrusion height and protrusion density and specific surface area to ensure high shear strength. That is, first, when the expansion area ratio Sdr of the interface is controlled within a specific range, when the variation in the size of the roughened particles on the surface of the roughened copper foil is large, the number of extremely small particles that cannot provide shear strength increases. , the peak apex density Spd tends to increase. On the other hand, according to the roughened copper foil of the present invention, the roughened particles with an appropriate size for imparting shear strength are attached to the roughened surface without unevenness, even if the developed area ratio Sdr of the interface is controlled to a very small range When , the vertex density Spd of this peak can also be controlled to a smaller value. In this way, when the copper foil is roughened according to the present invention, excellent high-frequency characteristics and high shear strength (more importantly, high circuit adhesion in terms of shear strength) can be realized.

從可優良平衡實現優異高頻特性及高剪切強度之觀點視之,粗糙化處理銅箔係粗糙化處理面之界面之展開面積比Sdr為0.50%以上7.00%以下,較佳為0.50%以上4.00%以下,更佳為0.50%以上2.00%以下。在如此範圍內之時,即使為高頻特性優異之微細表面(粗糙化高度),亦可確保覆銅層壓板乃至於印刷配線板製造時與層積之樹脂之充分黏著面積,提升剪切強度之觀點之電路密合性。From the viewpoint that excellent high-frequency characteristics and high shear strength can be achieved in a good balance, the developed area ratio Sdr of the interface of the roughened surface of the roughened copper foil is 0.50% or more and 7.00% or less, preferably 0.50% or more. 4.00% or less, more preferably 0.50% or more and 2.00% or less. Within this range, even if it is a fine surface (roughening height) with excellent high-frequency characteristics, a sufficient adhesion area between the copper clad laminate and the laminated resin can be ensured during the manufacture of printed wiring boards, and the shear strength can be improved. The point of view of circuit tightness.

從可優良平衡實現優異高頻特性及高剪切強度之觀點視之,粗糙化處理銅箔係粗糙化處理面之峰之頂點密度Spd為2.00×104 mm-2 以上3.30×104 mm-2 以下,較佳為2.00×104 mm-2 以上2.80×104 mm-2 以下,更佳為2.00×104 mm-2 以上2.45×104 mm-2 以下。在如此範圍內時,可確保覆銅層壓板乃至於印刷配線板製造時與層積之樹脂之充分黏著點的同時,更可抑制高頻信號之傳送路徑的變長,達成傳送損失之減低。From the viewpoint that excellent high-frequency characteristics and high shear strength can be achieved in a good balance, the peak density Spd of the roughened surface of the roughened copper foil is 2.00×10 4 mm -2 or more and 3.30×10 4 mm -2 Below, it is preferably 2.00×10 4 mm -2 or more and 2.80×10 4 mm -2 or less, more preferably 2.00×10 4 mm -2 or more and 2.45×10 4 mm -2 or less. Within such a range, sufficient adhesion points between the copper clad laminate and the laminated resin can be ensured during the manufacture of printed wiring boards, and at the same time, the lengthening of the transmission path of high-frequency signals can be suppressed, and the transmission loss can be reduced.

粗糙化處理銅箔係對於粗糙化處理面之界面之展開面積比Sdr(%)之峰之頂點密度Spd(mm-2 )比之Spd/Sdr為7000以上為佳,較佳為8000以上15000以下,更佳為9000以上12000以下。為此,經由將界面之展開面積比Sdr、和峰之頂點密度Spd之比例,控制在上述範圍,對於粗糙化處理面,可成為將賦予剪切強度之適度大小之粗糙化粒子,更附著於粗糙化處理面之構成,由此,構成粗糙化處理面之各粗糙化粒子則易於平均地陷入樹脂。其結果,即有優異高頻特性,亦可更確保高剪切強度。The roughened copper foil is preferably 7000 or more, preferably 8000 or more and 15000 or less. More preferably, it is 9000 or more and 12000 or less. For this reason, by controlling the ratio of the developed area ratio Sdr of the interface to the peak vertex density Spd within the above-mentioned ranges, the roughened surface can be made into roughened particles of an appropriate size that impart shear strength to the roughened surface. The structure of the roughened surface makes it easier for the roughened particles constituting the roughened surface to sink into the resin evenly. As a result, excellent high-frequency characteristics can be obtained, and high shear strength can be ensured.

粗糙化處理銅箔係對於粗糙化處理面之最大高度Sz(μm)、和峰之頂點密度Spd(mm-2 )之積之Sz×Spd係20000以上為佳,較佳為24000以上65000以下,更佳為25000以上35000以下。對於粗糙化處理銅箔,邊使展開面積比Sdr在上述範圍內,經由將Sz×Spd控制於如此範圍,可高度平衡確保粗糙化處理銅箔之平滑性,與於粗糙化處理面高密度存在較大之突起(粗糙化粒子)之狀態,維持優異高頻特性下,更提升與樹脂之密合性。其結果,即有優異高頻特性,亦可更確保高剪切強度。又,從實現更優異高頻特性性之微細表面之觀點視之,粗糙化處理銅箔之粗糙化處理面係最大高度Sz為1.3μm以下為佳,較佳為0.1μm以上0.9μm以下,更佳為0.4μm以上0.9μm以下。For the roughened copper foil, the maximum height Sz (μm) of the roughened surface and the product of the peak vertex density Spd (mm -2 ) are preferably Sz×Spd of 20,000 or more, preferably 24,000 or more and 65,000 or less, more Preferably, it is more than 25,000 and less than 35,000. For the roughened copper foil, while keeping the developed area ratio Sdr within the above-mentioned range, by controlling Sz×Spd in such a range, the smoothness of the roughened copper foil can be ensured in a high balance, and the high density of the roughened surface can be ensured. The state of larger protrusions (roughened particles) improves the adhesion with resin while maintaining excellent high-frequency characteristics. As a result, excellent high-frequency characteristics can be obtained, and high shear strength can be ensured. In addition, from the viewpoint of realizing a fine surface with better high-frequency characteristics, the maximum height Sz of the roughened surface of the roughened copper foil is preferably 1.3 μm or less, preferably 0.1 μm or more and 0.9 μm or less, and more It is preferably 0.4 μm or more and 0.9 μm or less.

粗糙化處理銅箔係粗糙化處理面之表面性狀之縱橫比Str為0.90以下為佳,較佳為0.30以上0.90以下,更佳為0.50以上0.90以下。如此之範圍內時,於粗糙化處理面,即使存在與樹脂之密接適切之波動,亦有有利於高頻特性之向同性。其結果,可確保高剪切強度下,更可實現優異之高頻特性。The aspect ratio Str of the surface properties of the roughened copper foil is preferably 0.90 or less, preferably 0.30 or more and 0.90 or less, more preferably 0.50 or more and 0.90 or less. Within such a range, even if there are fluctuations in the close contact with the resin on the roughened surface, it is beneficial to the isotropy of the high-frequency characteristics. As a result, high shear strength can be ensured, and excellent high frequency characteristics can be realized.

從可優良平衡實現優異高頻特性及高剪切強度之觀點視之,粗糙化處理銅箔係粗糙化處理面之核心部之階層差Sk為0.05μm以上0.30μm以下為佳,較佳為0.05μm以上0.20μm以下,更佳為0.05μm以上0.15μm以下。在如此範圍內之時,即使為高頻特性優異之微細表面(粗糙化高度),亦使構成粗糙化處理面之粗糙化粒子平均地陷入樹脂之結果,更提升與樹脂密合性。即,於粗糙化處理有不均之時,該不均係成為粗糙化處理面之突出峰部。但是,如此不均(突出峰部)係難以賦予剪切強度之觀點之電路密合性之提升。此部分,使用於以往評估之最大高度Sz等係包含突出峰部之參數。為此,根據如此參數,達成電路密合性之提升時,易於使粗糙化高度變大,結果高頻特性易於下降。相較之下,核心部之階層差Sk係如上所述為不包含突出峰部之參數。因此,將核心部之階層差Sk成為評估指標,可提升與樹脂之密合性,就結果而言,可抑制粗糙化高度之增大。From the viewpoint that excellent high-frequency characteristics and high shear strength can be achieved in a good balance, the level difference Sk of the core portion of the roughened surface of the roughened copper foil is preferably 0.05 μm or more and 0.30 μm or less, more preferably 0.05 μm or more and 0.20 μm or less, more preferably 0.05 μm or more and 0.15 μm or less. Within such a range, even if it is a fine surface (roughened height) excellent in high-frequency characteristics, the roughened particles constituting the roughened surface are evenly entrapped in the resin, and the adhesiveness with the resin is further improved. That is, when there is unevenness in the roughening treatment, the unevenness becomes a protruding peak portion of the roughening treatment surface. However, such unevenness (protruding peak portion) is an improvement in circuit adhesion from the viewpoint of difficulty in imparting shear strength. In this section, parameters such as the maximum height Sz used in the previous evaluations include the prominent peaks. Therefore, according to such a parameter, when the improvement of the circuit adhesion is achieved, the roughening height tends to be increased, and as a result, the high-frequency characteristic tends to deteriorate. In contrast, the level difference Sk of the core portion is a parameter that does not include the protruding peak portion as described above. Therefore, using the level difference Sk of the core portion as an evaluation index, the adhesiveness with the resin can be improved, and as a result, the increase in the roughening height can be suppressed.

粗糙化處理銅箔之厚度雖未特別加以限定,0.1μm以上35μm以下為佳,較佳為0.5μm以上5.0μm以下,更佳為1.0μm以上3.0μm以下。然而,粗糙化處理銅箔係不限於通常之銅箔之表面,進行粗糙化處理者,於附有載體銅箔之銅箔表面,進行粗糙化處理亦可。在此,粗糙化處理銅箔之厚度係不包含形成於粗糙化處理面之表面之粗糙化粒子之高度之厚度(構成粗糙化處理銅箔之銅箔本身之厚度)。有將具有上述範圍之厚度之銅箔,稱之為極薄銅箔之情形。The thickness of the roughened copper foil is not particularly limited, but is preferably 0.1 μm or more and 35 μm or less, preferably 0.5 μm or more and 5.0 μm or less, and more preferably 1.0 μm or more and 3.0 μm or less. However, the roughened copper foil is not limited to the surface of the usual copper foil, and the roughened copper foil may be roughened on the surface of the copper foil with the carrier copper foil. Here, the thickness of the roughened copper foil does not include the height of the roughened particles formed on the surface of the roughened surface (the thickness of the copper foil itself constituting the roughened copper foil). There are cases where the copper foil having the thickness in the above range is called an ultra-thin copper foil.

粗糙化處理銅箔係於至少一方之側,具有粗糙化處理面。即,粗糙化處理銅箔係於兩側,具有粗糙化處理面亦可,僅於一方之側,具有粗糙化處理面亦可。粗糙化處理面係典型而言具備複數之粗糙化粒子(突起),此等複數之粗糙化粒子係各別由銅粒子所成為佳。銅粒子係可由金屬銅所成,亦可由銅合金所成。The roughened copper foil has a roughened surface on at least one side. That is, the roughened copper foil may have a roughened surface on both sides, and may have a roughened surface only on one side. The roughened surface is typically provided with a plurality of roughened particles (protrusions), and each of these pluralities of roughened particles is preferably composed of copper particles. The copper particles may be made of metallic copper or may be made of a copper alloy.

為形成粗糙化處理面之粗糙化處理係於銅箔之上,以銅或銅合金形成粗糙化粒子,可較佳地被進行。例如,根據經由包含於銅箔之上,析出附著微細銅粒之燒結鍍敷工程、和為防止此微細銅粒之脫落之被覆鍍敷工程之至少2種類之鍍敷工程的鍍敷手法,進行粗糙化處理為佳。此時,燒結鍍敷工程係於包含銅濃度5g/L以上20g/L以下及硫酸濃度180g/L以上240g/L以下之硫酸銅溶液,含有20ppm以上29ppm以下之羧基苯并三唑(CBTA),進行電沉積為佳。又,被覆鍍敷工程係於包含銅濃度50g/L以上100g/L以下及硫酸濃度200g/L以上250g/L以下之硫酸銅溶液中,在40℃以上60℃以下之溫度下,於2A/dm2 以上4A/dm2 以下,進行電沉積為佳。對此,於燒結鍍敷工程中,將上述濃度範圍內之羧基苯并三唑,添加於電鍍液,保持接近純銅之蝕刻性下,對於粗糙化處理銅箔,可成為將展開面積比Sdr控制於非常小之範圍,且將賦予剪切強度之適度大小之粗糙化粒子無參差地附著於粗糙化處理面之構成,更且峰之頂點密度Spd亦可控制在較小之值。即,可將滿足上述表面參數之適切突起,易於形成於處理表面。更且。燒結鍍敷工程及被覆鍍敷工程中,較以往之手法,下降電流密度進行電沉積,更可將滿足上述表面參數之適切突起,易於形成於處理表面。The roughening treatment to form the roughened surface is preferably performed on the copper foil to form roughened particles with copper or a copper alloy. For example, it is carried out according to the plating method of at least two types of plating processes including a sintering plating process in which fine copper particles are deposited and adhered on the copper foil, and a coating plating process in order to prevent the peeling of the fine copper particles. Roughening treatment is better. At this time, the sintering plating process is carried out in a copper sulfate solution containing a copper concentration of 5 g/L or more and 20 g/L or less and a sulfuric acid concentration of 180 g/L or more and 240 g/L or less, and carboxybenzotriazole (CBTA) of 20 ppm or more and 29 ppm or less. , it is better to carry out electrodeposition. In addition, the coating plating process is carried out in a copper sulfate solution containing a copper concentration of 50 g/L or more and 100 g/L or less and a sulfuric acid concentration of 200 g/L or more and 250 g/L or less. dm 2 or more and 4A/dm 2 or less, preferably electrodeposition. In this regard, in the sintering plating process, the carboxybenzotriazole in the above-mentioned concentration range is added to the electroplating solution to maintain the etchability close to pure copper, and the developed area ratio Sdr can be controlled for the roughened copper foil. In a very small range, the roughened particles of moderate size imparting shear strength can be adhered to the roughened surface without unevenness, and the peak vertex density Spd can also be controlled to a small value. That is, suitable protrusions satisfying the above-mentioned surface parameters can be easily formed on the treated surface. And more. In the sintering plating process and the coating plating process, compared with the conventional method, electrodeposition is performed at a lower current density, and suitable protrusions satisfying the above-mentioned surface parameters can be easily formed on the treated surface.

經由所期望,粗糙化處理銅箔係可以防鏽處理,形成防鏽處理層亦可。防鏽處理係包含使用鋅之鍍敷處理之為佳。使用鋅之鍍敷處理係鋅鍍敷處理及鋅合金鍍敷處理之任一者皆可,鋅合金鍍敷處理係以鋅-鎳合金處理尤佳。鋅-鎳合金處理係至少包含Ni及Zn之鍍敷處理即可,更包含Sn、Cr、Co等之其他元素亦可。鋅-鎳合金鍍敷之Ni/Zn附著比率係質量比為1.2以上10以下為佳,較佳為2以上7以下,更佳為2.7以上4以下。又,防鏽處理係更包含鉻酸鹽處理亦可,此鉻酸鹽處理係於使用鋅鍍敷處理後,進行於包含鋅之鍍敷之表面則更佳。經由如此,可更提升防鏽性。尤佳之防鏽處理係組合鋅-鎳合金鍍敷處理與之後之鉻酸鹽處理。As desired, the roughening-treated copper foil system can be rust-proof, and a rust-proof layer may be formed. The anti-rust treatment preferably includes a plating treatment using zinc. The plating treatment using zinc may be either a zinc plating treatment or a zinc alloy plating treatment, and the zinc alloy plating treatment is preferably a zinc-nickel alloy treatment. The zinc-nickel alloy treatment may be a plating treatment including at least Ni and Zn, and may further include other elements such as Sn, Cr, and Co. The Ni/Zn adhesion ratio of zinc-nickel alloy plating is preferably 1.2 or more and 10 or less, preferably 2 or more and 7 or less, more preferably 2.7 or more and 4 or less. In addition, the antirust treatment may further include chromate treatment, and this chromate treatment is more preferably carried out on the surface of the plating containing zinc after the zinc plating treatment is used. By doing so, the rust resistance can be further improved. A particularly preferred anti-rust treatment is a combination of zinc-nickel alloy plating treatment followed by chromate treatment.

經由所期望,粗糙化處理銅箔係於表面,係可施以矽烷耦合劑處理,形成矽烷耦合劑層亦可。由此,可提升耐濕性、耐藥品性及黏著劑等之密合性等。矽烷耦合劑層係適切稀釋矽烷耦合劑加以塗佈,經由乾燥加以形成。做為矽烷耦合劑之例,可列舉4-環氧丙基丁基三甲氧基矽烷、3-縮水甘油醚氧基丙基三甲氧基矽烷等之環氧官能性矽烷耦合劑、或3-胺基丙基三甲氧基矽烷、N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等之胺基官能性矽烷耦合劑、或3-氫硫基丙基三甲氧基矽烷等之氫硫基官能性矽烷耦合劑或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等之烯烴官能性矽烷耦合劑、或3-甲基丙醯氧基丙基三甲氧基矽烷等之丙烯酸官能性矽烷耦合劑、或咪唑矽烷等之咪唑官能性矽烷耦合劑、或三嗪矽烷等之三嗪官能性矽烷耦合劑等。As desired, the surface of the roughened copper foil may be treated with a silane coupling agent, and a silane coupling agent layer may be formed. Thereby, moisture resistance, chemical resistance, adhesiveness of adhesives, etc. can be improved. The silane coupling agent layer is applied by appropriately diluting the silane coupling agent, and is formed by drying. Examples of silane coupling agents include epoxy-functional silane coupling agents such as 4-epoxypropylbutyltrimethoxysilane, 3-glycidyloxypropyltrimethoxysilane, etc., or 3-amine. propyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, N-3-(4-(3-aminopropoxy)butoxy) Amino-functional silane coupling agents such as propyl-3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, or 3-hydrothiopropyltrimethoxysilane Hydrogen thio-functional silane coupling agent such as silane or olefin-functional silane coupling agent such as vinyltrimethoxysilane, vinylphenyltrimethoxysilane, etc., or 3-methylpropionyloxypropyltrimethoxysilane Acrylic-functional silane coupling agent such as silane, imidazole-functional silane coupling agent such as imidazole silane, or triazine-functional silane coupling agent such as triazine silane, etc.

由上述理由,粗糙化處理銅箔係於粗糙化處理面,更具備防鏽處理層及/或矽烷耦合劑層為佳,較佳為具備防鏽處理層及矽烷耦合劑層之兩者。防鏽處理層及矽烷耦合劑層係不僅粗糙化處理銅箔之粗糙化處理面側,形成於未形成粗糙化處理面側亦可。For the above reasons, the roughened copper foil is preferably further provided with an antirust treatment layer and/or a silane coupling agent layer on the roughened surface, preferably both of the antirust treatment layer and the silane coupling agent layer. The antirust treatment layer and the silane coupling agent layer may be formed not only on the roughened surface side of the roughened copper foil, but also on the side where the roughened surface is not formed.

附有載體銅箔 如上所述,本發明之粗糙化處理銅箔係以附有載體銅箔之形態提供亦可。即,根據本發明之較佳形態,提供具備載體、和設於該載體上之剝離層、和於該剝離層上,使粗糙化處理面向外側設置之上述粗糙化處理銅箔的附有載體銅箔。當然,附有載體銅箔係除了使用本發明之粗糙化處理銅箔之外,可採用公知之層構成。With carrier copper foil As described above, the roughened copper foil of the present invention may be provided in a form with a carrier copper foil. That is, according to a preferred aspect of the present invention, there is provided a copper with carrier including a carrier, a peeling layer provided on the carrier, and the above-mentioned roughened copper foil provided on the peeling layer with the roughened surface facing outward. foil. Of course, the copper foil with a carrier can be constituted by a known layer in addition to the use of the roughened copper foil of the present invention.

載體係支持粗糙化處理銅箔,提升該操作性之支持體,典型之載體係包含金屬層。做為如此載體之例,可列舉鋁箔、銅箔、不鏽鋼(SUS)箔、將表面以銅等金屬塗佈之樹脂薄膜或玻璃等。較佳為銅箔。銅箔係雖可為輥壓銅箔及電解銅箔之任一者,較佳為電解銅箔。載體之厚度係典型為250μm以下,較佳為9μm以上200μm以下。The carrier system supports the roughened copper foil to improve the handleability. A typical carrier system includes a metal layer. Examples of such a carrier include aluminum foil, copper foil, stainless steel (SUS) foil, a resin film or glass whose surface is coated with a metal such as copper. Preferably it is copper foil. Although the copper foil may be either a rolled copper foil or an electrolytic copper foil, an electrolytic copper foil is preferable. The thickness of the carrier is typically 250 μm or less, preferably 9 μm or more and 200 μm or less.

載體之剝離層側之面係平滑為佳。即,於附有載體銅箔之製造程序中,於載體之剝離層側之面,形成(進行粗糙化處理前之)極薄銅箔。將本發明之粗糙化處理銅箔以附有載體銅箔之形態使用之時,粗糙化處理銅箔係對於如此極薄銅箔,經由施以粗糙化處理而獲得。因此,經由平滑載體之剝離層側之面,亦可使極薄銅箔之外側之面變得平滑,於此極薄銅箔之平滑面,施以粗糙化處理,易於實現具有上述特定範圍內之界面之展開面積比Sdr及核心部之階層差Sk之粗糙化處理面。為使載體之剝離層例之面變得平滑,例如將載體使用於電解製箔之陰極表面,以特定之型號之磨輪進行研磨,調整表面粗糙度加以進行。即,經由如此調整之陰極之表面輪廓轉印在載體之電極面,於此載體之電極面上,隔著剝離層,形成極薄銅箔,於極薄銅箔之外側面,可賦予易於實現上述粗糙化處理面之平滑表面狀態。較佳磨輪之型號係#2000以上#3000以下,較佳為#2000以上#2500以下。又,從將極薄銅箔更成為平滑,將所得粗糙化處理銅箔之展開面積比Sdr更容易控制於上述範圍之觀點視之,將電解製箔載體時之條件,成為使用下述添加劑之條件者為佳。即,使用令銅濃度為60g/L以上100g/L以下,令硫酸濃度為50g/L以上150g/L以下,做為添加劑,令活性硫黃化合物之磺酸鹽之濃度成為5mg/L以上1g/L以下,令具有環狀構造之4級銨鹽聚合物之濃度成為5mg/L以上500mg/L以下、令氯濃度調整在10mg/L以上100mg/L以下之硫酸系銅電解液,於陽極使用DSA(尺寸安定性陽極),在液溫40℃以上60℃以下,電流密度30A/dm2 以上100A/dm2 以下,進行電解,可較佳獲得表面更為平滑之電解銅箔。在此,做為添加劑使用之活性硫黃化合物之磺酸鹽之例係可列舉3-氫硫基-1-丙烷碸酸鹽、及雙(3-磺基丙基)二苯硫醚等,做為具有環狀構造之4級銨鹽聚合物之例,可列舉二烯丙基二甲基氯化銨聚合物等。Preferably, the surface of the carrier on the release layer side is smooth. That is, in the manufacturing process of the copper foil with a carrier, on the surface of the peeling layer side of a carrier, the ultra-thin copper foil (before roughening process is performed) is formed. When the roughened copper foil of the present invention is used in a form with a carrier copper foil, the roughened copper foil is obtained by subjecting such an ultra-thin copper foil to roughening. Therefore, by smoothing the surface of the release layer side of the carrier, the outer surface of the ultra-thin copper foil can also be smoothed, and the smooth surface of the ultra-thin copper foil is roughened, and it is easy to achieve the above-mentioned specific range. The developed area of the interface is worse than the level of Sdr and the core part by the roughened surface of Sk. In order to smooth the surface of the peeling layer of the carrier, for example, the carrier is used on the cathode surface of the electrolytic foil, and it is ground with a specific type of grinding wheel to adjust the surface roughness. That is, the surface profile of the cathode adjusted in this way is transferred to the electrode surface of the carrier. On the electrode surface of the carrier, an ultra-thin copper foil is formed through the peeling layer. On the outer side of the ultra-thin copper foil, it can be easily The smooth surface state of the above-mentioned roughened surface. The preferred type of grinding wheel is #2000 or more and #3000 or less, preferably #2000 or more and #2500 or less. In addition, from the viewpoint of making the ultra-thin copper foil smoother and the developed area of the resulting roughened copper foil more easily controlled than Sdr within the above-mentioned range, the conditions for electrolytically forming a foil carrier are those when the following additives are used. Conditions are better. That is, the concentration of copper is 60 g/L or more and 100 g/L or less, and the sulfuric acid concentration is 50 g/L or more and 150 g/L or less. As additives, the concentration of the sulfonate of the active sulfur compound is 5 mg/L or more and 1 g. /L or less, make the concentration of the 4-stage ammonium salt polymer with a ring structure to be 5 mg/L or more and 500 mg/L or less, and adjust the chlorine concentration to 10 mg/L or more and 100 mg/L or less. Using DSA (dimensionally stable anode), electrolysis is performed at a liquid temperature of 40°C above 60°C, and a current density of 30A/dm 2 or more and 100A/dm 2 or less, which can preferably obtain an electrolytic copper foil with a smoother surface. Here, examples of sulfonates of active sulfur compounds used as additives include 3-hydrothio-1-propane sulfonate, bis(3-sulfopropyl)diphenyl sulfide, and the like. As an example of the quaternary ammonium salt polymer which has a cyclic structure, a diallyl dimethyl ammonium chloride polymer etc. are mentioned.

剝離層係弱化載體之剝落強度,擔保該強度之安定性,更且具有抑制於高溫之加壓成形時在載體與銅箔間產生相互之擴散的機能層。剝離層係一般形成於載體之一方面,但形成於兩面亦可。剝離層係可為有機剝離層及無機剝離層之任一者。做為使用於有機剝離層之有機成分之例,可列舉含氮有機化合物、含硫有機化合物、羧酸等。做為含氮有機化合物之例,可列舉三唑化合物、咪唑化合物等,其中三唑化合物係易於安定剝離性之部分為佳。做為三唑化合物之例,可列舉1,2,3-苯並三唑、羧基苯并三唑、N’,N’-雙(苯并三唑基甲基)尿素、1H-1,2,4-三唑及3-胺基-1H-1,2,4-三唑等。做為含硫有機化合物之例,可列舉氫硫基苯并噻唑、三聚硫氰酸,2-苯並咪唑硫羥酸等。做為羧酸之例,可列舉單羧酸、二羧酸等。做為使用於無機剝離層之無機成分之例,可列舉Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn、鉻酸鹽處理膜等。然而,剝離層之形成係於載體之至少一方之表面,接觸含剝離層成分溶液,將剝離層成分固定於載體之表面等加以進行即可。將載體接觸於含剝離層成分溶液之時,此接觸係經由對於含剝離層成分溶液之浸漬、含剝離層成分溶液之噴霧、含剝離層成分溶液之流下等加以進行即可。其他,可採用以蒸鍍或濺鍍等所成氣相法,將剝離層成分被膜形成之方法。又,對於剝離層成分之載體表面之固定,係經由含剝離層成分溶液之吸附或乾燥、含剝離層成分溶液中之剝離層成分之電沉積等加以進行即可。剝離層之厚度係典型為1nm以上1μm以下,較佳為5nm以上500nm以下。The peeling layer weakens the peeling strength of the carrier, guarantees the stability of the strength, and has a functional layer that inhibits the mutual diffusion between the carrier and the copper foil during high-temperature compression molding. The release layer is generally formed on one side of the carrier, but may be formed on both sides. The peeling layer may be any of an organic peeling layer and an inorganic peeling layer. As an example of the organic component used for the organic peeling layer, a nitrogen-containing organic compound, a sulfur-containing organic compound, a carboxylic acid, etc. are mentioned. Examples of the nitrogen-containing organic compound include triazole compounds, imidazole compounds, and the like, and among them, the triazole compound is preferably a part that is easy to stabilize and peel off. Examples of triazole compounds include 1,2,3-benzotriazole, carboxybenzotriazole, N',N'-bis(benzotriazolylmethyl)urea, 1H-1,2 , 4-triazole and 3-amino-1H-1,2,4-triazole, etc. Examples of the sulfur-containing organic compound include thiothiobenzothiazole, thiocyanate, 2-benzimidazole thiol acid, and the like. As an example of a carboxylic acid, a monocarboxylic acid, a dicarboxylic acid, etc. are mentioned. As an example of the inorganic component used for the inorganic peeling layer, Ni, Mo, Co, Cr, Fe, Ti, W, P, Zn, a chromate treatment film, etc. are mentioned. However, the formation of the peeling layer may be performed on at least one surface of the carrier by contacting a solution containing the peeling layer component to fix the peeling layer component on the surface of the carrier. When the carrier is brought into contact with the release layer component-containing solution, the contact may be performed by dipping the release layer component-containing solution, spraying the release layer component-containing solution, or flowing the release layer component-containing solution. Otherwise, a method of forming a film of the peeling layer component by vapor deposition, sputtering, or the like can be employed. In addition, fixation of the carrier surface of the peeling layer component may be performed by adsorption or drying of the solution containing the peeling layer component, electrodeposition of the peeling layer component in the solution containing the peeling layer component, or the like. The thickness of the peeling layer is typically 1 nm or more and 1 μm or less, preferably 5 nm or more and 500 nm or less.

經由所期望,於剝離層與載體及/或粗糙化處理銅箔間,設置其他機能層亦可。做為如此其他機能層之例,可列舉補助金屬層。補助金屬層係由鎳及/或鈷所成為佳。經由將如此補助金屬層形成於載體之表面側及/或粗糙化處理銅箔之表面側,於高溫或長時間之熱壓成形時,可抑制在載體與銅箔間產生之相互擴散,擔保載體之剝落強度之安定性。補助金屬層之厚度為0.001μm以上3μm以下為佳。As desired, other functional layers may be provided between the release layer and the carrier and/or the roughened copper foil. Examples of such other functional layers include auxiliary metal layers. The auxiliary metal layer is preferably made of nickel and/or cobalt. By forming such an auxiliary metal layer on the surface side of the carrier and/or the surface side of the roughened copper foil, the mutual diffusion between the carrier and the copper foil can be suppressed during hot pressing at high temperature or for a long time, and the carrier can be guaranteed. The stability of peeling strength. The thickness of the auxiliary metal layer is preferably 0.001 μm or more and 3 μm or less.

覆銅層壓板 本發明之粗糙化處理銅箔係使用於印刷配線板用覆銅層壓板之製作為佳。即,根據本發明之較佳形態時,提供具備上述粗糙化處理銅箔之覆銅層壓板。經由使用本發明之粗糙化處理銅箔,於覆銅層壓板之加工中,可兼顧優異高頻特性與高剪切強度。此覆銅層壓板係具備本發明之粗糙化處理銅箔、和密接於粗糙化處理銅箔之粗糙化處理面設置之樹脂層。粗糙化處理銅箔係可設於樹脂層之單面,亦可設於兩面。樹脂層係包含樹脂而成,較佳為包含絕緣性樹脂而成。樹脂層係預浸體及/或樹脂薄片為佳。預浸體係於合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等之基材,含浸合成樹脂之複合材料之總稱。做為絕緣性樹脂之較佳例,可列舉環氧樹脂、氰酸鹽樹脂、雙馬來酸酐縮亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂等。又,做為構成樹脂薄片之絕緣性樹脂之例,可列舉環氧樹脂、聚醯亞胺樹脂、聚酯樹脂等之絕緣樹脂。又,於樹脂層,從提升絕緣性等之觀點視之,亦可含有矽石、氧化鋁等之各種無機粒子所成填料粒子等。樹脂層之厚度雖未特別加以限定,1μm以上1000μm以下為佳,較佳為2μm以上400μm以下,更佳為3μm以上200μm以下。樹脂層係可以複數之層加以構成。預浸體及/或樹脂薄片等之樹脂層係隔著預先塗佈於銅箔表面塗裝樹脂層,設於粗糙化處理銅箔亦可。CCL The roughened copper foil of the present invention is preferably used in the production of copper-clad laminates for printed wiring boards. That is, according to the preferable aspect of this invention, the copper clad laminate provided with the said roughening process copper foil is provided. By using the roughened copper foil of the present invention, both excellent high-frequency characteristics and high shear strength can be achieved in the processing of copper-clad laminates. This copper-clad laminate includes the roughened copper foil of the present invention, and a resin layer provided in close contact with the roughened surface of the roughened copper foil. The roughened copper foil may be provided on one side of the resin layer, or may be provided on both sides. The resin layer contains a resin, preferably an insulating resin. The resin layer is preferably a prepreg and/or a resin sheet. The prepreg system is a general term for composite materials impregnated with synthetic resins on substrates such as synthetic resin sheets, glass sheets, glass woven fabrics, glass non-woven fabrics, and paper. As a preferable example of an insulating resin, an epoxy resin, a cyanate resin, a bismaleic anhydride imide triazine resin (BT resin), a polyphenylene ether resin, a phenol resin, etc. are mentioned. Moreover, as an example of the insulating resin which comprises a resin sheet, insulating resin, such as an epoxy resin, a polyimide resin, a polyester resin, is mentioned. In addition, the resin layer may contain filler particles and the like made of various inorganic particles such as silica and alumina from the viewpoint of improving insulating properties and the like. The thickness of the resin layer is not particularly limited, but is preferably 1 μm or more and 1000 μm or less, preferably 2 μm or more and 400 μm or less, and more preferably 3 μm or more and 200 μm or less. The resin layer may be constituted by plural layers. The resin layer, such as a prepreg and/or a resin sheet, may be coated on the surface of the copper foil via a pre-coated resin layer, and may be provided on the roughened copper foil.

印刷配線板 本發明之粗糙化處理銅箔係使用於印刷配線板之製作為佳。即,根據本發明之較佳形態時,提供具備上述粗糙化處理銅箔之印刷配線板。經由使用本發明之粗糙化處理銅箔,於印刷配線板之製造中,可兼顧優異高頻特性與高剪切強度。本形態所成印刷配線板係包含層積樹脂層、和銅層的層構成而成。銅層係由來於本發明之粗糙化處理銅箔之層。又,對於樹脂層,有關覆銅層壓板之部分則如上述。不論如何,印刷配線板係除了使用本發明之粗糙化處理銅箔之外,可採用公知之層構成。做為關於印刷配線板之具體例,可列舉在成為在於預浸體之單面或兩面,黏著本發明之粗糙化處理銅箔而硬化之層積體上,形成電路之單面或兩面之印刷配線板,或將此等多層化之多層印刷配線板等。又,做為其他具體例,係於樹脂薄膜上,形成本發明之粗糙化處理銅箔,形成電路之可撓性印刷配線板、COF、TAB膠帶等。做為更為其他之具體例,可列舉於本發明之粗糙化處理銅箔,形成塗佈上述樹脂層之附有樹脂銅箔(RCC),將樹脂層做為絕緣接著材,層積於上述印刷基板後,將粗糙化處理銅箔做為配線層之全部或一部分,以改良型半加成法(MSAP)法、消去處理法,形成電路的多層配線板,或除去粗糙化處理銅箔,以部分加成法形成電路之多層配線板,交互重覆對半導體積體電路上之附有樹脂銅箔之層積和電路形成之直接層積晶圓等。做為更為發展之具體例,可列舉將上述附有樹脂銅箔層積於基材電路形成之天線元件、隔著黏著劑層,層積於玻璃或樹脂薄膜,形成圖案之面板・顯示器用電子材料或窗戶玻璃用電子材料、於本發明之粗糙化處理銅箔塗佈導電性黏著劑之電磁波遮蔽・薄膜等。尤其是,本發明之具備粗糙化處理銅箔之印刷配線板係可做為在信號頻率10GHz以上之高頻帶域所使用之汽車用天線、行動電話基地台天線、高性能伺服器、衝突防止用雷達等之用途所使用之高頻基板被適切使用。尤其,本發明之粗糙化處理銅箔係適於MSAP法。例如經由MSAP法電路形成之時,可採用圖1及圖2所示構成。 [實施例]printed wiring board The roughened copper foil of the present invention is preferably used in the production of printed wiring boards. That is, according to the preferable aspect of this invention, the printed wiring board provided with the said roughening process copper foil is provided. By using the roughened copper foil of the present invention, in the manufacture of printed wiring boards, both excellent high-frequency characteristics and high shear strength can be achieved. The printed wiring board obtained in this embodiment is composed of layers including a laminated resin layer and a copper layer. The copper layer is a layer derived from the roughened copper foil of the present invention. In addition, as for the resin layer, the part related to the copper clad laminate is as described above. In any case, the printed wiring board can be constituted by a known layer in addition to the use of the roughened copper foil of the present invention. As a specific example of the printed wiring board, one or both sides of the prepreg can be printed on one side or both sides of the prepreg to form the circuit on one side or both sides of the laminate to which the roughened copper foil of the present invention is adhered and cured. Wiring boards, or multilayer printed wiring boards, etc. Moreover, as another specific example, the roughened copper foil of this invention is formed on a resin film, and the flexible printed wiring board, COF, TAB tape etc. which form a circuit are formed. As a more specific example, the roughened copper foil of the present invention can be cited, forming the resin-coated copper foil (RCC) coated with the above-mentioned resin layer, using the resin layer as an insulating adhesive material, and laminating the above-mentioned resin layer. After printing the substrate, the roughened copper foil is used as all or a part of the wiring layer to form a circuit multilayer wiring board by the modified semi-additive method (MSAP) method or the elimination method, or to remove the roughened copper foil. Multilayer wiring boards where circuits are formed by a partial additive method, laminates with resin copper foils on semiconductor integrated circuits, and direct laminate wafers for circuit formation are alternately repeated. As a specific example of further development, there are antenna elements formed by laminating the above-mentioned resin-coated copper foil on a substrate circuit, and an adhesive layer is laminated on a glass or resin film to form a pattern for panels and displays. Electronic materials or electronic materials for window glass, electromagnetic wave shielding films, etc., which are coated with a conductive adhesive on the roughened copper foil of the present invention. In particular, the printed wiring board provided with the roughened copper foil of the present invention can be used as an automotive antenna, a mobile phone base station antenna, a high-performance server, and a collision prevention used in a high frequency band with a signal frequency of 10 GHz or more. High-frequency substrates used for applications such as radar are appropriately used. In particular, the roughened copper foil of the present invention is suitable for the MSAP method. For example, when the circuit is formed by the MSAP method, the configuration shown in FIG. 1 and FIG. 2 can be adopted. [Example]

將本發明,經由以下之例,更具體說明。The present invention will be described more specifically through the following examples.

例1、2、4及7 將具備粗糙化處理銅箔之附有載體銅箔,如以下製作及評估。Examples 1, 2, 4 and 7 The copper foil with the carrier with the roughened copper foil was produced and evaluated as follows.

(1)載體之準備 使用以下所示組成之銅電解液、和陰極、和做為陽極之DSA(尺寸安定性陽極),以溶液溫度50℃、電流密度70A/dm2 電解,將厚18μm之電解銅箔,做為載體加以製作。此時,做為陰極,使用將表面以#2000之磨輪研磨,整飭表面粗糙度之電極。 <銅電解液之組成> ‐ 銅濃度:80g/L ‐ 硫酸濃度:300g/L ‐ 氯濃度:30mg/L - 膠濃度:5mg/L(1) Preparation of the carrier Using the copper electrolyte with the composition shown below, the cathode, and the DSA (dimensionally stable anode) as the anode, electrolysis was carried out at a solution temperature of 50°C and a current density of 70A/dm 2 , and the thickness of 18 μm was electrolyzed. Electrolytic copper foil is produced as a carrier. At this time, as a cathode, an electrode whose surface was polished with a #2000 grinding wheel to adjust the surface roughness was used. <Composition of copper electrolyte> - Copper concentration: 80g/L - Sulfuric acid concentration: 300g/L - Chlorine concentration: 30mg/L - Glue concentration: 5mg/L

(2)剝離層之形成 將酸洗處理之載體之電極面,於包含羧基苯并三唑(CBTA)濃度1g/L、硫酸濃度150g/L及銅濃度10g/L之CBTA水溶液,以液溫30℃浸漬30秒鐘,將CBTA成分吸附於載體之電極面。如此,於載體之電極面,將CBTA層做為有機剝離層而形成。(2) Formation of peeling layer Immerse the electrode surface of the pickled carrier in a CBTA aqueous solution containing carboxybenzotriazole (CBTA) concentration of 1g/L, sulfuric acid concentration of 150g/L and copper concentration of 10g/L at a liquid temperature of 30°C for 30 seconds. The CBTA component is adsorbed on the electrode surface of the carrier. In this way, on the electrode surface of the carrier, the CBTA layer is formed as an organic peeling layer.

(3)補助金屬層之形成 將形成有機剝離層之載體,浸漬於使用硫酸鎳製作之含鎳濃度20g/L之溶液,以液溫45℃、pH3、電流密度5A/dm2 之條件,將相當厚度0.001μm之附著量之鎳,附著於有機剝離層上。如此,於有機剝離層上,將鎳層做為補助金屬層而形成。(3) Formation of the auxiliary metal layer The carrier that will form the organic peeling layer is immersed in a solution with a nickel concentration of 20 g/L made of nickel sulfate . Nickel with a thickness equivalent to 0.001 μm adhered to the organic peeling layer. Thus, on the organic peeling layer, the nickel layer was formed as an auxiliary metal layer.

(4)極薄銅箔之形成 將形成補助金屬層之載體,浸漬於以下所示組成之銅溶液,以溶液溫度50℃、電流密度5A/dm2 以上30A/dm2 以下電解,將厚1.5μm之極薄銅箔,形成於補助金屬層上。 <溶液之組成> ‐ 銅濃度:60g/L ‐ 硫酸濃度:200g/L(4) Formation of ultra-thin copper foil The carrier that forms the auxiliary metal layer is immersed in a copper solution with the composition shown below, and electrolyzed at a solution temperature of 50°C and a current density of 5A/ dm2 or more and 30A/dm2 or less, and the thickness of 1.5 The ultra-thin copper foil of μm is formed on the auxiliary metal layer. <The composition of the solution> ‐ Copper concentration: 60g/L ‐ Sulfuric acid concentration: 200g/L

(5)粗糙化處理 於如此形成之極薄銅箔之表面,進行粗糙化處理,形成粗糙化處理銅箔,由此獲得附有載體銅箔。此粗糙化處理係由於極薄銅箔之上,析出附著微細銅粒之燒結鍍敷工程、和為防止此微細銅粒之脫落之被覆鍍敷工程所構成。燒結鍍敷工程中,於包含銅濃度10g/L及硫酸濃度200g/L之液溫25℃之酸性硫酸銅溶液,添加表1所示濃度之羧基苯并三唑(CBTA),以表1所示電流密度,進行粗糙化處理。之後之被覆鍍敷工程中,使用包含銅濃度70g/L及硫酸濃度240g/L之酸性硫酸銅溶液,以液溫52℃及表1所示電流密度之平滑鍍敷條件,進行電沉積。此時,將燒結鍍敷工程之CBTA濃度及電流密度,以及被覆鍍敷工程之電流密度,適切變更表1所示者,裁作粗糙化處理表面之特徵為不同之各種樣本。(5) Roughening treatment The surface of the ultra-thin copper foil thus formed is roughened to form a roughened copper foil, thereby obtaining a carrier-attached copper foil. This roughening treatment consists of a sintering plating process for depositing and adhering fine copper particles on the ultra-thin copper foil, and a coating plating process for preventing the falling off of the fine copper particles. In the sintering and plating process, the carboxybenzotriazole (CBTA) of the concentration shown in Table 1 was added to an acidic copper sulfate solution containing a copper concentration of 10 g/L and a sulfuric acid concentration of 200 g/L at a liquid temperature of 25 °C. The current density is shown, and roughening treatment is carried out. In the subsequent coating plating process, electrodeposition was performed using an acidic copper sulfate solution containing a copper concentration of 70 g/L and a sulfuric acid concentration of 240 g/L under the smooth plating conditions of the solution temperature of 52° C. and the current density shown in Table 1. At this time, the CBTA concentration and current density of the sintering plating process and the current density of the coating plating process were appropriately changed from those shown in Table 1, and various samples with different characteristics of the roughened surface were cut.

(6)防鏽處理 於所得附有載體銅箔之粗糙化處理表面,進行鋅-鎳合金鍍敷處理及鉻酸鹽處理所成防鏽處理。首先,使用包含鋅濃度1g/L、鎳濃度2g/L及焦磷酸鉀濃度80g/L之溶液,以液溫40℃、電流密度0.5A/dm2 之條件,於粗糙化處理層及載體之表面,進行鋅-鎳合金鍍敷處理。接著,使用包含鉻酸1g/L之水溶液、以pH12、電流密度1A/dm2 之條件,於進行鋅-鎳合金鍍敷處理之表面,進行鉻酸鹽處理。(6) Antirust Treatment The roughened surface of the obtained copper foil with a carrier was subjected to zinc-nickel alloy plating treatment and chromate treatment to obtain an antirust treatment. First, use a solution containing zinc concentration of 1 g/L, nickel concentration of 2 g/L and potassium pyrophosphate concentration of 80 g/L, under the conditions of liquid temperature of 40 °C and current density of 0.5 A/dm 2 , between the roughened layer and the carrier. The surface is plated with zinc-nickel alloy. Next, using an aqueous solution containing 1 g/L of chromic acid, under the conditions of pH 12 and current density of 1 A/dm 2 , the surface subjected to the zinc-nickel alloy plating treatment was subjected to chromate treatment.

(7)矽烷耦合劑處理 將包含市售矽烷耦合劑之水溶液,吸附於附有載體銅箔之粗糙化處理銅箔側之表面,經由電熱器蒸發水分,進行矽烷耦合劑處理。此時,矽烷耦合劑處理係不在載體側進行。(7) Silane coupling agent treatment An aqueous solution containing a commercially available silane coupling agent was adsorbed on the surface of the roughened copper foil side with the carrier copper foil, and the water was evaporated through an electric heater to perform the silane coupling agent treatment. At this time, the silane coupling agent treatment is not performed on the carrier side.

(8)評估 對於如此所得附有載體銅箔,將各種特性之評估如以下加以進行。(8) Evaluation About the copper foil with a carrier obtained in this way, the evaluation of various characteristics was performed as follows.

(8a)粗糙化處理面之表面性狀參數 經由使用雷射顯微鏡(Olympus股份有限公司製,OLS5000)之表面粗糙度解析,依據ISO25178進行粗糙化處理銅箔之粗糙化處理面之測定。具體而言,將粗糙化處理銅箔之粗糙化處理面之面積16384μm2 之領域之表面輪廓,在於上記雷射顯微鏡,以數值孔徑(N.A.)0.95之100倍透鏡加以測定。對於所得粗糙化處理面之表面輪廓,進行除去雜訊及1次線形面傾斜補正後,經由表面性狀解析,實施最大高度Sz、界面之展開面積比Sdr、表面性狀之縱橫比Str、核心部之階層差Sk及峰之頂點密度Spd之測定。此時,Sz、Sdr、Str及Sk之測定係令S濾波器所成截止波長為0.55μm,L濾波器所成截止波長為10μm加以計測。另一方面,Spd之測定係令S濾波器所成截止波長為3μm,L濾波器所成截止波長為10μm加以計測。結果係如表1所示。(8a) Surface property parameters of the roughened surface The roughened surface of the roughened copper foil was measured in accordance with ISO25178 through surface roughness analysis using a laser microscope (manufactured by Olympus Co., Ltd., OLS5000). Specifically, the surface profile of the area of the roughened surface of the roughened copper foil with an area of 16384 μm 2 was measured with a 100-fold lens with a numerical aperture (NA) of 0.95 in the above-mentioned laser microscope. The surface profile of the obtained roughened surface was subjected to noise removal and primary linear surface inclination correction, and then, through the analysis of the surface properties, the maximum height Sz, the developed area ratio Sdr of the interface, the aspect ratio Str of the surface properties, and the ratio of the core portion were carried out. Determination of level difference Sk and peak vertex density Spd. At this time, the measurement of Sz, Sdr, Str, and Sk was performed with the cutoff wavelength of the S filter set to 0.55 μm and the cutoff wavelength of the L filter to be 10 μm. On the other hand, for the measurement of Spd, the cutoff wavelength of the S filter was 3 μm, and the cutoff wavelength of the L filter was 10 μm. The results are shown in Table 1.

(8b)鍍敷電路密合性(剪切強度) 使用所得附有載體銅箔,製作評估用層積體。即,於絕緣樹脂基板之表面,隔著預浸體(三菱氣體化學股份有限公司製,GHPL-830NSF,厚度0.1mm),層積附有載體銅箔之粗糙化處理銅箔,以壓力4.0MPa、溫度220℃,熱壓接90分鐘後,剝離載體,得做為評估用層積體之覆銅層壓板。於評估用層積體,貼合乾式薄膜,進行曝光及顯影。於以顯影之乾式薄膜遮蔽之層積體,以圖案鍍敷,析出厚度14μm之銅層後,剝離乾式薄膜。蝕刻以硫酸-過酸化氫系蝕刻液顯出之銅部分,製作高度15μm、寬度10μm、長度200μm之剪切強度測定用電路樣本(形成圖5所示電路136之層積體134)。使用接合強度試驗機(Nordson DAGE公司製,4000Plus Bondtester),測定從剪切強度測定用電路樣本之旁邊壓偏電路136時之剪切強度。即,如圖5所示,將形成電路136之層積體134,載置於可動平台132上,每一平台132向圖中箭頭方向移動,於預先固定之檢測器138,按壓電路136,對於電路136之側面,賦予橫方向之力,使電路136向橫方向偏移,將此時之力(gf)於檢測器138測定,做為剪切強度加以採用。此時,測試種類係破壞試驗,以測試高度5μm、下降速度0.050mm/s、測試速度200μm/s、工具移動量0.05mm、破壞辨識點10%之條件,進行測定。將所得剪切強度,如以下之基準評量評估,在評估A或B之時,判定為合格。結果係如表1所示。 <剪切強度評估基準> ‐評估A:剪切強度為12.50gf以上 ‐評估B:剪切強度為11.50gf以上不足12.50gf ‐評估C:剪切強度為不足11.50gf(8b) Plated circuit adhesion (shear strength) Using the obtained copper foil with a carrier, a laminate for evaluation was produced. That is, on the surface of the insulating resin substrate, through a prepreg (manufactured by Mitsubishi Gas Chemical Co., Ltd., GHPL-830NSF, thickness 0.1mm), a roughened copper foil with a carrier copper foil was laminated, and the pressure was 4.0MPa. , The temperature is 220℃, after 90 minutes of thermocompression bonding, the carrier is peeled off, and the copper clad laminate can be used as a laminate for evaluation. For the laminated body for evaluation, a dry film is attached, and exposure and development are performed. After the layered body masked with the developed dry film was plated with a pattern to deposit a copper layer with a thickness of 14 μm, the dry film was peeled off. The copper portion exposed by the sulfuric acid-hydrogen peroxide-based etchant was etched to prepare a circuit sample for shear strength measurement with a height of 15 μm, a width of 10 μm, and a length of 200 μm (forming the laminate 134 of the circuit 136 shown in FIG. 5 ). The shear strength when the circuit 136 was biased from the side of the circuit sample for shear strength measurement was measured using a bond strength tester (Nordson DAGE, 4000Plus Bondtester). That is, as shown in FIG. 5, the laminated body 134 forming the circuit 136 is placed on the movable platform 132, each platform 132 moves in the direction of the arrow in the figure, and the pre-fixed detector 138 is pressed against the circuit 136. A lateral force is applied to the side surface of the circuit 136 to deflect the circuit 136 in the lateral direction, and the force (gf) at this time is measured by the detector 138 and used as the shear strength. At this time, the test type was a failure test, and the measurement was carried out under the conditions of a test height of 5 μm, a descending speed of 0.050 mm/s, a test speed of 200 μm/s, a tool movement amount of 0.05 mm, and a failure identification point of 10%. The obtained shear strength was evaluated as the following standard evaluation, and when A or B was evaluated, it was judged as pass. The results are shown in Table 1. <Shear Strength Evaluation Criteria> ‐Evaluation A: Shear strength is 12.50gf or more ‐Evaluation B: Shear strength is 11.50gf or more and less than 12.50gf ‐Evaluation C: Shear strength is less than 11.50gf

(8c)高頻特性 使用所得附有載體銅箔,製作覆銅層壓板。即,於基材(30GHz之介電正接Df=0.005)之表面,層積附有載體銅箔之粗糙化處理銅箔,熱壓接之後,剝離載體,成為覆銅層壓板。對於此覆銅層壓板,以與上述(8b)同様之工法(乾式薄膜層積、曝光及顯影、圖案鍍敷、以及乾式薄膜剝離後之蝕刻),形成電路長度300mm之微帶線,成為傳送特性測定用基板。將傳送特性測定用基板,使用網路分析儀(Keysight兵公司製,N5225B),在50Ω±5Ω之特性阻抗,在自10MHz至50GHz之頻率下,進行透過特性S21之測定。將所得26GHz以上30GHz以下之損失量加以平均,如以下之基準,評量評估。然後,高頻特性評估為A或B之時,判定為合格。結果係如表1所示。 <高頻特性性評估基準> ‐評估A:損失量為0.320dB/cm以下 ‐評估B:損失量為超過0.320dB/cm,0.350dB/cm以下 ‐評估C:損失量為超過0.350dB/cm(8c) High frequency characteristics Using the obtained copper foil with a carrier, a copper clad laminate was produced. That is, a roughened copper foil with a carrier copper foil is laminated on the surface of the base material (30GHz dielectric positive connection Df=0.005), and after thermocompression bonding, the carrier is peeled off to form a copper clad laminate. For this copper-clad laminate, a microstrip line with a circuit length of 300 mm was formed by the same method as the above (8b) (dry film lamination, exposure and development, pattern plating, and etching after dry film peeling), which became the transmission line. Substrate for property measurement. The transmission characteristic S21 was measured using a network analyzer (N5225B, manufactured by Keysight Corporation) for the transmission characteristic measurement substrate at a characteristic impedance of 50Ω±5Ω at a frequency from 10MHz to 50GHz. The obtained loss amount above 26GHz and below 30GHz is averaged and evaluated according to the following criteria. Then, when the high-frequency characteristic evaluation was A or B, it was judged as pass. The results are shown in Table 1. <High-frequency characteristic evaluation criteria> ‐Evaluation A: The amount of loss is 0.320dB/cm or less ‐Evaluation B: The amount of loss is more than 0.320dB/cm and less than 0.350dB/cm ‐ Evaluation C: The amount of loss exceeds 0.350dB/cm

例3及5 下述a)~c)之外係與例1同樣進行附有載體銅箔之製作及評估。結果係如表1所示。 a)將載體之準備如以下所示手序進行。 b)代替載體之電極面,於載體之析出面,將剝離層、補助金屬層及極薄銅箔,以此順序形成。 c)此時,將燒結鍍敷工程之CBTA濃度及電流密度,以及被覆鍍敷工程之電流密度,各別變更為表1所示數值。Examples 3 and 5 The production and evaluation of the copper foil with a carrier were carried out in the same manner as in Example 1 except for the following a) to c). The results are shown in Table 1. a) The preparation of the carrier is carried out according to the procedure shown below. b) Instead of the electrode surface of the carrier, on the precipitation surface of the carrier, the peeling layer, the auxiliary metal layer and the ultra-thin copper foil are formed in this order. c) At this time, the CBTA concentration and current density in the sintering plating process and the current density in the covering plating process were changed to the values shown in Table 1, respectively.

(載體之準備) 做為銅電解液,使用以下所示組成之硫酸酸性硫酸銅溶液、於陰極使用表面粗糙度Ra為0.20μm之鈦製電極,於陽極使用DSA(尺寸安定性陽極),以溶液溫度45℃、電流密度55A/dm2 電解,將厚12μm之電解銅箔,獲得做為載體。 <硫酸酸性硫酸銅溶液之組成> ‐ 銅濃度:80g/L ‐ 自由硫酸濃度:140g/L ‐ 雙(3-磺酸丙基)二苯硫醚濃度:30mg/L ‐ 二烯丙基二甲基氯化銨聚合物濃度:50mg/L ‐ 氯濃度:40mg/L(Preparation of carrier) As the copper electrolyte, a sulfuric acid copper sulfate solution with the composition shown below was used, a titanium electrode with a surface roughness Ra of 0.20 μm was used for the cathode, and DSA (dimensionally stable anode) was used for the anode. The solution temperature was 45°C and the current density was 55A/dm 2 for electrolysis, and an electrolytic copper foil with a thickness of 12 μm was obtained as a carrier. <The composition of sulfuric acid copper sulfate solution> - Copper concentration: 80g/L - Free sulfuric acid concentration: 140g/L - Bis(3-sulfopropyl)diphenyl sulfide concentration: 30mg/L - Diallyldimethyl methacrylate Ammonium chloride polymer concentration: 50mg/L ‐ Chlorine concentration: 40mg/L

例6(比較) 代替燒結鍍敷工程及被覆鍍敷工程,經由以下所示黑色鍍敷工程,進行極薄銅箔之粗糙化處理之外,與例3相同,進行附有載體銅箔之製作及評估。結果係如表1所示。Example 6 (comparison) In place of the sintering plating process and the covering plating process, the preparation and evaluation of the copper foil with a carrier were performed in the same manner as in Example 3, except that the roughening treatment of the ultra-thin copper foil was performed through the black plating process shown below. The results are shown in Table 1.

(黑色鍍敷工程) 對於極薄銅箔之表面,使用以下所示組成之黑色粗糙化用銅電解溶液,以溶液溫度30℃,電流密度50A/dm2 ,時間4sec之條件電解,進行黑色粗糙化。 <黑色粗糙化用銅電解溶液之組成> ‐ 銅濃度:13g/L ‐ 硫酸濃度:70g/L ‐ 氯濃度:35mg/L ‐ 聚丙烯酸鈉濃度:400ppm(Black Plating Process) For the surface of the ultra-thin copper foil, use the copper electrolytic solution for black roughening with the composition shown below, and conduct electrolysis under the conditions of solution temperature 30°C, current density 50A/dm 2 , and time 4sec to carry out black roughening change. <Composition of copper electrolytic solution for black roughening> - Copper concentration: 13g/L - Sulfuric acid concentration: 70g/L - Chlorine concentration: 35mg/L - Sodium polyacrylate concentration: 400ppm

Figure 02_image001
Figure 02_image001

10:極薄銅箔 11:絕緣樹脂基板 11a:基底基材 11b:下層電路 12:預浸體 13:塗裝層 14:貫穿孔 15:化學鍍銅 16:乾式薄膜 17:電性鍍銅 17a:配線部分 18:配線 132:可動平台 134:層積體 136:電路 138:檢測器10: Very thin copper foil 11: Insulating resin substrate 11a: Base Substrate 11b: Lower circuit 12: Prepreg 13: Coating layer 14: Through hole 15: Electroless copper plating 16: Dry film 17: Electrical copper plating 17a: Wiring part 18: Wiring 132: Movable Platform 134: Laminate 136: Circuit 138: Detector

[圖1]為說明MSAP法之工程之流程圖,顯示前半之工程(工程(a)~(d))之圖。 [圖2]為說明MSAP法之工程之流程圖,顯示後半之工程(工程(e)~(g))之圖。 [圖3]依據ISO25178決定之負載曲線及為說明負荷面積率之圖。 [圖4]分離依據ISO25178決定之突出峰部與核心部之負荷面積率Smr1、分離之突出谷部與核心部之負荷面積率Smr2、及為說明核心部之階層差Sk之圖。 [圖5]為說明剪切強度之測定方法之模式圖。[Fig. 1] is a flow chart illustrating the process of the MSAP method, showing the first half of the process (process (a) to (d)). [Fig. 2] is a flow chart for explaining the process of the MSAP method, showing the process of the latter half (process (e) to (g)). [Fig. 3] A load curve determined in accordance with ISO25178 and a graph illustrating the load area ratio. Fig. 4 is a diagram illustrating the load area ratio Smr1 of the protruding peak portion and the core portion determined in accordance with ISO25178, the load area ratio Smr2 of the separated protruding valley portion and the core portion, and the level difference Sk of the core portion. [ Fig. 5] Fig. 5 is a schematic diagram illustrating a method of measuring shear strength.

Claims (11)

一種粗糙化處理銅箔,前述粗糙化處理銅箔係於至少一方之側,具有粗糙化處理面,前述粗糙化處理面依據ISO25178在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之界面之展開面積比Sdr為0.50%以上7.00%以下,依據ISO25178在S濾波器所成截止波長3.0μm及L濾波器所成截止波長10μm之條件下測定之峰之頂點密度Spd為2.00×104mm-2以上3.30×104mm-2以下。 A roughened copper foil, the roughened copper foil is attached to at least one side and has a roughened surface, and the roughened surface has a cutoff wavelength of 0.55 μm formed by an S filter and a cutoff formed by an L filter according to ISO25178 The developed area ratio Sdr of the interface measured at a wavelength of 10μm is 0.50% or more and 7.00% or less. According to ISO25178, the peak density of the peak measured under the conditions of the cut-off wavelength of S filter of 3.0 μm and the cut-off wavelength of L filter of 10 μm Spd is 2.00×10 4 mm -2 or more and 3.30×10 4 mm -2 or less. 如請求項1記載之粗糙化處理銅箔,其中,前述界面之展開面積比Sdr為0.50%以上4.00%以下。 The roughened copper foil according to claim 1, wherein the developed area ratio Sdr of the interface is 0.50% or more and 4.00% or less. 如請求項1或2記載之粗糙化處理銅箔,其中,前述峰之頂點密度Spd(mm-2)相對於前述界面之展開面積比Sdr(%)之比即Spd/Sdr為7000以上。 The roughened copper foil according to claim 1 or 2, wherein the ratio of the peak density Spd (mm -2 ) to the developed area ratio Sdr (%) of the interface, that is, Spd/Sdr is 7000 or more. 如請求項1或2記載之粗糙化處理銅箔,其中,前述粗糙化處理面依據ISO25178在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之最大高度Sz(μm)及前述峰之頂點密度Spd(mm-2)之積即Sz×Spd為20000以上。 The roughened copper foil according to claim 1 or 2, wherein the roughened surface has a maximum height Sz measured according to ISO25178 under the conditions of a cutoff wavelength of 0.55 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter (μm) and the product of the peak density Spd (mm −2 ), that is, Sz×Spd, is 20,000 or more. 如請求項1或2記載之粗糙化處理銅箔,其中,前述粗糙化處理面依據ISO25178在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之表面性狀之縱橫比Str為0.90以下。 The roughened copper foil as set forth in claim 1 or 2, wherein the roughened surface has surface properties measured according to ISO25178 under the conditions of a cutoff wavelength of 0.55 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter. The aspect ratio Str is 0.90 or less. 如請求項1或2記載之粗糙化處理銅箔, 其中,前述粗糙化處理面依據ISO25178在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之核心部之階層差Sk為0.05μm以上0.30μm以下。 For the roughened copper foil described in claim 1 or 2, Among them, the step difference Sk of the core part measured according to ISO25178 under the conditions of the cutoff wavelength of S filter of 0.55 μm and the cutoff wavelength of L filter of 10 μm is 0.05 μm or more and 0.30 μm or less. 如請求項1或2記載之粗糙化處理銅箔,其中,前述粗糙化處理面依據ISO25178在S濾波器所成截止波長0.55μm及L濾波器所成截止波長10μm之條件下測定之最大高度Sz為1.3μm以下。 The roughened copper foil according to claim 1 or 2, wherein the roughened surface has a maximum height Sz measured according to ISO25178 under the conditions of a cutoff wavelength of 0.55 μm formed by an S filter and a cutoff wavelength of 10 μm formed by an L filter is 1.3 μm or less. 如請求項1或2記載之粗糙化處理銅箔,其中,於前述粗糙化處理面更具備防鏽處理層及/或矽烷耦合劑層。 The roughened copper foil according to claim 1 or 2, further comprising a rust-preventive treatment layer and/or a silane coupling agent layer on the roughened surface. 一種附有載體銅箔,係具備載體、設於該載體上之剝離層、及於該剝離層上使前述粗糙化處理面向外側設置之如請求項1~8之任一項記載之粗糙化處理銅箔。 A copper foil with a carrier, comprising a carrier, a peeling layer provided on the carrier, and the roughening treatment according to any one of Claims 1 to 8 provided on the peeling layer so that the aforementioned roughening treatment faces outward copper foil. 一種覆銅層壓板,其特徵係具備如請求項1~8之任一項記載之粗糙化處理銅箔。 A copper-clad laminate characterized by having the roughened copper foil according to any one of claims 1 to 8. 一種印刷配線板,其特徵係具備如請求項1~8之任一項記載之粗糙化處理銅箔。A printed wiring board comprising the roughened copper foil according to any one of Claims 1 to 8.
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