TWI719567B - Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board - Google Patents

Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board Download PDF

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TWI719567B
TWI719567B TW108127478A TW108127478A TWI719567B TW I719567 B TWI719567 B TW I719567B TW 108127478 A TW108127478 A TW 108127478A TW 108127478 A TW108127478 A TW 108127478A TW I719567 B TWI719567 B TW I719567B
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copper foil
roughened
carrier
copper
layer
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TW202009329A (en
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細川眞
髙梨哲聡
溝口美智
平岡慎哉
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日商三井金屬鑛業股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60Electroplating characterised by the structure or texture of the layers
    • C25D5/605Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00Electroforming
    • C25D1/04Wires; Strips; Foils
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/06Wires; Strips; Foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Laminated Bodies (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

本發明提供一種在覆銅層合板的加工至印刷配線板的製造,可兼備優異之蝕刻性與高剪切強度之粗糙化處理銅箔。此粗糙化處理銅箔,其係於至少一側的面具有粗糙化處理面之粗糙化處理銅箔,粗糙化處理面依據ISO25178所測定之最大高度Sz為0.65~1.00μm,依據ISO25178所測定之界面的展開面積比Sdr為1.50~4.20,依據ISO25178所測定之波峰的頂點密度Spd為6.50×106 ~8.50×106 個/mm2The present invention provides a roughened copper foil with excellent etching properties and high shear strength from the processing of copper clad laminates to the manufacture of printed wiring boards. This roughened copper foil is a roughened copper foil with a roughened surface on at least one side. The roughened surface has a maximum height Sz measured according to ISO25178 of 0.65~1.00μm, which is measured according to ISO25178 The spread area ratio Sdr of the interface is 1.50-4.20, and the peak density Spd measured according to ISO25178 is 6.50×10 6 to 8.50×10 6 pieces/mm 2 .

Description

粗糙化處理銅箔、附載體之銅箔、覆銅層合板及印刷配線板Roughened copper foil, copper foil with carrier, copper clad laminate and printed wiring board

本發明係關於粗糙化處理銅箔、附載體之銅箔、覆銅層合板及印刷配線板。The present invention relates to a roughened copper foil, a copper foil with a carrier, a copper clad laminate, and a printed wiring board.

近年來,作為適合在電路之微細化的印刷配線板的製造工法,廣泛採用MSAP(Modified semi-additive process)法。MSAP法係適合形成極為微細電路之手法,為了活化其特徵,則使用附載體之銅箔進行。例如,如圖1及2所示,將極薄銅箔10於基底基材11a上具備下層電路11b之絕緣樹脂基板11上,使用預浸料12與底漆層13進行沖壓使其密著,(步驟(a)),剝離載體(未圖示)後,如有必要藉由雷射穿孔形成通孔14(步驟(b))。接著,實施化學鍍銅15(步驟(c))後,藉由使用乾膜16之曝光及顯影以指定之圖型遮蔽(步驟(d)),實施電氣鍍銅17(步驟(e))。去除乾膜16形成配線部分17a後(步驟(f)),將彼此相鄰之配線部分17a與17a間的不必要極薄銅箔等通過該等之厚度全體藉由蝕刻去除(步驟(g)),得到以指定之圖型形成之配線18。於此,應提昇電路-基板間之物理性密著性,一般所進行的是於極薄銅箔10的表面進行粗糙化處理。In recent years, the MSAP (Modified semi-additive process) method has been widely adopted as a manufacturing method of printed wiring boards suitable for the miniaturization of circuits. The MSAP method is a method suitable for forming extremely fine circuits. In order to activate its characteristics, it is carried out using copper foil with a carrier. For example, as shown in FIGS. 1 and 2, an ultra-thin copper foil 10 is placed on an insulating resin substrate 11 with a lower circuit 11b on a base substrate 11a, and a prepreg 12 and a primer layer 13 are used to press to make them adhere to each other. (Step (a)), after peeling off the carrier (not shown), if necessary, through holes 14 are formed by laser perforation (step (b)). Next, after performing electroless copper plating 15 (step (c)), by using the exposure and development of the dry film 16 to mask with a specified pattern (step (d)), electrical copper plating 17 is performed (step (e)). After removing the dry film 16 to form the wiring portion 17a (step (f)), the unnecessary ultra-thin copper foil between the wiring portions 17a and 17a adjacent to each other is completely removed by etching through the thickness (step (g) ), the wiring 18 formed with the specified pattern is obtained. Here, the physical adhesion between the circuit and the substrate should be improved. Generally, the surface of the ultra-thin copper foil 10 is roughened.

實際上,藉由MSAP法等之微細電路形成性優異之附載體之銅箔提案有幾個。例如,專利文獻1(國際公開第2016/117587號)中揭示具備剝離層側之面的表面峰值間平均距離為20μm以下,且與剝離層相反側的面之膨脹的最大高低差為1.0μm以下之極薄銅箔的附載體之銅箔,根據該態樣,變成可兼備微細電路形成性與雷射加工性。又,專利文獻2(日本特開2018-26590號公報)中,揭示有以提昇微細電路形成性作為目的,依據極薄銅層側表面之ISO25178之最大山高度Sp與突出山部高度Spk的比Sp/Spk為3.271~10.739之附載體之銅箔。 [先前技術文獻] [專利文獻]In fact, there are several proposals for copper foil with a carrier that is excellent in the formation of fine circuits by the MSAP method. For example, Patent Document 1 (International Publication No. 2016/117587) discloses that the average distance between the peaks of the surface on the side with the release layer is 20 μm or less, and the maximum height difference of the expansion of the surface on the opposite side of the release layer is 1.0 μm or less According to this aspect, the copper foil with carrier of the ultra-thin copper foil can have both fine circuit formation properties and laser processability. In addition, Patent Document 2 (Japanese Patent Application Laid-Open No. 2018-26590) discloses the ratio of the maximum mountain height Sp to the projecting mountain height Spk based on the ISO25178 of the side surface of the ultra-thin copper layer for the purpose of improving the formation of fine circuits. Sp/Spk is 3.271~10.739 copper foil with carrier. [Prior Technical Literature] [Patent Literature]

[專利文獻1]國際公開第2016/117587號 [專利文獻2]日本特開2018-26590號公報[Patent Document 1] International Publication No. 2016/117587 [Patent Document 2] JP 2018-26590 A

近年來,為了藉由上述之MSAP法等形成更微細電路,對於銅箔尋求更一層之平滑化及粗糙化粒子之微小化。然而,藉由銅箔之平滑化及粗糙化粒子之微小化,有關電路之微細化之銅箔的蝕刻性雖提昇,但變成銅箔與基板樹脂等之物理性密著力降低。尤其是隨著電路之細線化進展,在印刷配線板之實裝步驟,藉由對電路加入在橫方向之物理性應力(亦即剪切應力),電路變易剝離,導致產率降低的課題顯在化。此點,電路與基板之物理密著指標之一有剪切強度(Shear strength),為了有效果地迴避上述之電路剝離,尋求將剪切強度保持在一定以上。然而,為了確保一定以上之剪切強度,有不得不擴大銅箔之粗糙化粒子,實現與蝕刻性之兼備困難的問題。In recent years, in order to form finer circuits by the above-mentioned MSAP method or the like, there has been a demand for a layer of smoothing of copper foil and miniaturization of roughened particles. However, due to the smoothing of copper foil and the miniaturization of roughened particles, the etching properties of the copper foil related to the miniaturization of the circuit are improved, but the physical adhesion between the copper foil and the substrate resin is reduced. Especially with the progress of circuit thinning, in the mounting step of the printed wiring board, by adding the physical stress (ie shear stress) in the horizontal direction to the circuit, the circuit becomes easy to peel off, resulting in the problem of reduced yield. In the process. At this point, one of the physical adhesion indicators between the circuit and the substrate is the shear strength (Shear strength). In order to effectively avoid the above-mentioned circuit peeling, it is sought to keep the shear strength above a certain level. However, in order to ensure the shear strength above a certain level, it is necessary to enlarge the roughened particles of the copper foil, and it is difficult to achieve both the etching performance.

本發明者們現在,在粗糙化處理銅箔,藉由賦予將ISO25178所規定之最大高度Sz、界面的展開面積比Sdr及波峰的頂點密度Spd分別控制在指定範圍之表面輪廓,在覆銅層合板的加工至印刷配線板的製造,得到可兼備優異之蝕刻性與高剪切強度之卓見。The inventors of the present inventors are now in the roughening process of copper foil, by giving the maximum height Sz specified by ISO25178, the expansion area ratio of the interface Sdr, and the peak density Spd of the wave crest are respectively controlled in the specified range of the surface profile, in the copper clad layer From the processing of plywood to the manufacture of printed wiring boards, we have obtained the insight of having excellent etching properties and high shear strength.

據此,本發明之目的為提供一種在覆銅層合板的加工至印刷配線板的製造,可兼備優異之蝕刻性與高剪切強度之粗糙化處理銅箔。Accordingly, the object of the present invention is to provide a roughened copper foil that can have both excellent etching properties and high shear strength from the processing of the copper-clad laminate to the manufacture of the printed wiring board.

根據本發明之一態樣,提供一種粗糙化處理銅箔,其係於至少一側的面具有粗糙化處理面之粗糙化處理銅箔,其特徵為前述粗糙化處理面依據ISO25178所測定之最大高度Sz為0.65~1.00μm,依據ISO25178所測定之界面的展開面積比Sdr為1.50~4.20,依據ISO25178所測定之波峰的頂點密度Spd為6.50×106 ~8.50×106 個/mm2According to one aspect of the present invention, there is provided a roughened copper foil, which is a roughened copper foil having a roughened surface on at least one side, and is characterized in that the roughened surface is the largest measured in accordance with ISO25178 The height Sz is 0.65 to 1.00 μm, the spread area ratio Sdr of the interface measured according to ISO25178 is 1.50-4.20, and the peak density Spd measured according to ISO25178 is 6.50×10 6 to 8.50×10 6 pieces/mm 2 .

根據本發明之另一態樣,提供一種附載體之銅箔,其係具備載體、與設置在該載體上之剝離層、與於該剝離層上將前述粗糙化處理面定於外側所設置之前述粗糙化處理銅箔。According to another aspect of the present invention, there is provided a copper foil with a carrier, which is provided with a carrier, a peeling layer provided on the carrier, and a peeling layer on which the roughened surface is arranged on the outside. The aforementioned roughening process copper foil.

根據本發明之又另一態樣,提供一種具備前述粗糙化處理銅箔之覆銅層合板。According to yet another aspect of the present invention, there is provided a copper-clad laminate having the aforementioned roughened copper foil.

根據本發明之又另一態樣,提供一種具備前述粗糙化處理銅箔之印刷配線板。According to yet another aspect of the present invention, there is provided a printed wiring board provided with the aforementioned roughened copper foil.

定義 將為了特定本發明所使用之用語至參數的定義示於以下。definition The definitions of terms to parameters used to specify the present invention are shown below.

在本說明書,所謂「最大高度Sz」,係表示依據ISO25178所測定之從表面最高點到最低點為止的距離之參數。最大高度Sz可藉由將在粗糙化處理面之指定測定面積(例如6812μm2 之二維區域)的表面輪廓以市售之雷射顯微鏡測定算出。In this manual, the so-called "maximum height Sz" is a parameter indicating the distance from the highest point to the lowest point on the surface measured in accordance with ISO25178. The maximum height Sz can be calculated by measuring the surface profile of a designated measurement area (for example , a two-dimensional area of 6812 μm 2 ) on the roughened surface with a commercially available laser microscope.

在本說明書,所謂「界面的展開面積比Sdr」,係表示依據ISO25178所測定之定義區域之展開面積(表面積)相對於定義區域之面積增大多少之參數。此值越小,表示越接近平坦之表面形狀,完全平坦之表面的Sdr為0。另一方面,此值越大,表示凹凸越多之表面形狀。例如,表面之Sdr為0.4時,表示此表面從完全平坦的表面增大40%表面積。界面的展開面積比Sdr可藉由將在粗糙化處理面之指定測定面積(例如6812μm2 之二維區域)的表面輪廓以市售之雷射顯微鏡測定算出。In this specification, the "expansion area ratio Sdr of the interface" is a parameter indicating how much the expansion area (surface area) of the defined area measured in accordance with ISO25178 increases relative to the area of the defined area. The smaller the value, the closer to the flat surface shape, and the Sdr of the completely flat surface is 0. On the other hand, the larger the value, the more uneven surface shape. For example, when the Sdr of the surface is 0.4, it means that the surface area is increased by 40% from a completely flat surface. The spread area ratio Sdr of the interface can be calculated by measuring the surface profile of a designated measurement area (for example, a two-dimensional area of 6812 μm 2 ) on the roughened surface with a commercially available laser microscope.

在本說明書,所謂「波峰的頂點密度Spd」,係表示依據ISO25178所測定之每一單位面積之山頂點之數的參數。此值大時披露與其他物體的接觸點之數較多。波峰的頂點密度Spd可藉由將在粗糙化處理面之指定的測定面積(例如6812μm2 之二維區域)的表面輪廓以市售之雷射顯微鏡測定來算出。In this specification, the so-called "peak density Spd" is a parameter indicating the number of mountain vertices per unit area measured in accordance with ISO25178. When this value is large, the number of contact points with other objects is more disclosed. The peak density Spd can be calculated by measuring the surface profile of a designated measurement area (for example , a two-dimensional area of 6812 μm 2 ) on the roughened surface with a commercially available laser microscope.

在本說明書,所謂載體之「電極面」,係指於載體製作時與陰極接觸側的面。In this specification, the "electrode surface" of the carrier refers to the surface on the side in contact with the cathode during the production of the carrier.

在本說明書,所謂載體之「析出面」,係指於載體製作時析出電解銅側的面,亦即未與陰極接觸側的面。In this specification, the "precipitation surface" of the carrier refers to the surface on the side where the electrolytic copper is deposited during the production of the carrier, that is, the surface on the side not in contact with the cathode.

粗糙化處理銅箔 藉由本發明之銅箔為粗糙化處理銅箔。此粗糙化處理銅箔於至少一側的面具有粗糙化處理面。此粗糙化處理面係最大高度Sz為0.65~1.00μm,界面的展開面積比Sdr為1.50~4.20,波峰的頂點密度Spd為6.50×106 ~8.50×106 個/mm2 。如此,在粗糙化處理銅箔,藉由賦予將最大高度Sz、界面的展開面積比Sdr及波峰的頂點密度Spd分別控制在指定範圍之表面輪廓,在覆銅層合板的加工至印刷配線板的製造,使得兼備優異之蝕刻性與高剪切強度變可能。The roughened copper foil is a roughened copper foil by the copper foil of the present invention. The roughened copper foil has a roughened surface on at least one side. The maximum height Sz of the roughened surface system is 0.65 to 1.00 μm, the expansion area ratio Sdr of the interface is 1.50 to 4.20, and the peak density Spd of the wave peak is 6.50×10 6 to 8.50×10 6 pieces/mm 2 . In this way, in the roughened copper foil, the maximum height Sz, the spread area ratio of the interface Sdr, and the peak density Spd of the peak are respectively controlled to the specified range of the surface profile, which is used in the processing of the copper clad laminate to the printed wiring board. Manufacturing makes it possible to have both excellent etching properties and high shear strength.

優異之蝕刻性與高剪切強度原本即難以兼備。此係如前述,為了提昇銅箔之蝕刻性,一般而言,尋求縮小粗糙化粒子時,為了提高電路之剪切強度,一般而言,尋求增大粗糙化粒子。另一方面,根據本發明,即使出乎意料亦變成可兼備優異之蝕刻性與高剪切強度。亦即,剪切強度係與自以往被使用在評估之比表面積或粗糙化高度等單純不成比例,進行其控制有困難。此點,本發明者們發現為了取得與蝕刻性或剪切強度等之物性的關聯,除了相關最大高度Sz,組合界面的展開面積比Sdr及波峰的頂點密度Spd來進行評估為有效。而且,發現藉由將此等的表面參數分別控制在上述指定範圍內,而得到為蝕刻性優異之微細的表面,並且具有有利於為了確保高剪切強度之隆起高度及隆起密度以及比表面積之粗糙化處理銅箔。如此,根據本發明之粗糙化處理銅箔,可實現優異之蝕刻性及高剪切強度,因此,變成可兼備以優異之微細電路形成性與剪切強度所謂的觀點之高電路密著性。It is inherently difficult to have both excellent etching properties and high shear strength. As mentioned above, in order to improve the etching properties of copper foil, generally speaking, when seeking to reduce the roughening particles, in order to improve the shear strength of the circuit, generally speaking, it is seeking to increase the roughening particles. On the other hand, according to the present invention, even if it is unexpected, it becomes possible to have both excellent etching properties and high shear strength. That is, the shear strength is simply out of proportion to the specific surface area or roughness height that has been used for evaluation since the past, and it is difficult to control it. In this regard, the inventors found that in order to obtain correlation with physical properties such as etching properties and shear strength, it is effective to evaluate the expansion area ratio of the combined interface Sdr and the peak density Spd in addition to the correlation maximum height Sz. Furthermore, it has been found that by controlling these surface parameters within the above specified ranges, a fine surface with excellent etching properties can be obtained, and it has the advantages of swelling height, swelling density and specific surface area for ensuring high shear strength. Roughened copper foil. In this way, according to the roughened copper foil of the present invention, excellent etching properties and high shear strength can be achieved. Therefore, it becomes possible to have high circuit adhesion from the so-called viewpoints of excellent fine circuit formation and shear strength.

從平衡良好地實現優異之蝕刻性及高剪切強度的觀點來看,粗糙化處理銅箔係粗糙化處理面的最大高度Sz為0.65~1.00μm,較佳為0.65~0.90μm,更佳為0.65~0.80μm。又,粗糙化處理銅箔係粗糙化處理面之界面的展開面積比Sdr為1.50~4.20,較佳為1.80~3.50,更佳為2.00~3.00。進而,粗糙化處理銅箔係粗糙化處理面之波峰的頂點密度Spd為6.50×106 ~8.50×106 個/mm2 ,較佳為7.65×106 ~8.50×106 個/mm2 ,更佳為7.80×106 ~8.30×106 個/mm2From the viewpoint of achieving excellent etching properties and high shear strength in a well-balanced manner, the maximum height Sz of the roughened surface of the roughened copper foil system is 0.65 to 1.00 μm, preferably 0.65 to 0.90 μm, more preferably 0.65~0.80μm. Moreover, the spread area ratio Sdr of the interface of the roughened copper foil system roughened surface is 1.50-4.20, Preferably it is 1.80-3.50, More preferably, it is 2.00-3.00. Furthermore, the peak density Spd of the wave crest of the roughened copper foil system roughened surface is 6.50×10 6 to 8.50×10 6 pieces/mm 2 , preferably 7.65×10 6 to 8.50×10 6 pieces/mm 2 , More preferably, it is 7.80×10 6 to 8.30×10 6 pieces/mm 2 .

粗糙化處理銅箔在粗糙化處理面之最大高度Sz、界面的展開面積比Sdr及波峰的頂點密度Spd的乘積即Sz×Sdr×Spd較佳為7.50×106 ~2.70×107 (μm・個/mm2 ),更佳為9.00×106 ~2.60×107 (μm・個/mm2 ),再更佳為1.00×107 ~2.00×107 (μm・個/mm2 )。為這般的範圍內時,變成更加容易實現優異之蝕刻性與高剪切強度的兼備。The product of the maximum height Sz of the roughened copper foil on the roughened surface, the spread area ratio of the interface Sdr and the peak density Spd, namely Sz×Sdr×Spd is preferably 7.50×10 6 ~2.70×10 7 (μm・ Pieces/mm 2 ), more preferably 9.00×10 6 to 2.60×10 7 (μm・pieces/mm 2 ), still more preferably 1.00×10 7 to 2.00×10 7 (μm・pieces/mm 2 ). When it is in this range, it becomes easier to achieve both excellent etching properties and high shear strength.

粗糙化處理銅箔的厚度雖並未特別限定,但較佳為0.1~35μm,更佳為0.5~5.0μm,再更佳為1.0~3.0μm。尚,粗糙化處理銅箔並不限於通常之銅箔的表面進行粗糙化處理者,可為於附載體之銅箔的銅箔表面進行粗糙化處理者。Although the thickness of the roughened copper foil is not particularly limited, it is preferably 0.1 to 35 μm, more preferably 0.5 to 5.0 μm, and still more preferably 1.0 to 3.0 μm. Furthermore, the roughened copper foil is not limited to those that roughen the surface of the usual copper foil, and may be one that roughens the surface of the copper foil of the copper foil with a carrier.

粗糙化處理銅箔於至少一側的面具有粗糙化處理面。亦即,粗糙化處理銅箔可為於兩側具有粗糙化處理面者,亦可為僅於一側的面具有粗糙化處理面者。粗糙化處理面通常而言,已具備複數個粗糙化粒子(隆起),此等複數個粗糙化粒子較佳為分別由銅粒子所構成。銅粒子可為由金屬銅所構成者,亦可為由銅合金所構成者。The roughened copper foil has a roughened surface on at least one surface. That is, the roughened copper foil may have a roughened surface on both sides, or may have a roughened surface on only one surface. Generally speaking, the roughened surface is provided with a plurality of roughened particles (protrusions), and these roughened particles are preferably composed of copper particles. The copper particles may be made of metallic copper, or may be made of copper alloy.

用以形成粗糙化處理面之粗糙化處理,藉由於銅箔之上以銅或銅合金形成粗糙化粒子可較佳進行。例如,較佳為依照鍍敷手法進行粗糙化處理,該鍍敷手法係經由包含至少2種類之於銅箔之上使微細銅粒析出附著之燒鍍步驟、與用以防止此微細銅粒之脫落的覆蓋鍍敷步驟的鍍敷步驟。此情況下,燒鍍步驟以於包含銅濃度5~20g/L及硫酸濃度180~240g/L之硫酸銅溶液,添加30~50ppm(更佳為35~50ppm)之羧基苯并三唑(CBTA),於15~35℃的溫度,在12~24A/dm2 (更佳為12~18A/dm2 )進行電沉積較佳。又,覆蓋鍍敷步驟以於包含銅濃度50~100g/L及硫酸濃度200~250g/L之硫酸銅溶液中,於40~60℃的溫度,在2.3~4A/dm2 (更佳為2.5~3.5A/dm2 )進行電沉積較佳。尤其是在燒鍍步驟,藉由將上述濃度範圍內之羧基苯并三唑添加在鍍敷液,邊保持接近純銅之蝕刻性,邊變成容易在處理表面形成有利於滿足上述之表面參數的隆起。進而,在燒鍍步驟及覆蓋鍍敷步驟,藉由較以往之手法更降低電流密度,來進行電沉積,變成更容易在處理表面形成有利於滿足上述之表面參數的隆起。The roughening treatment used to form the roughened surface can be better performed by forming roughened particles with copper or copper alloy on the copper foil. For example, it is preferable to perform roughening treatment in accordance with a plating method that includes at least two types of firing steps for depositing and adhering fine copper particles on the copper foil, and a method for preventing such fine copper particles. A plating step that covers the plating step that comes off. In this case, the baking step is to add 30-50ppm (more preferably 35-50ppm) of carboxybenzotriazole (CBTA) to a copper sulfate solution containing a copper concentration of 5-20g/L and a sulfuric acid concentration of 180-240g/L. ), the electrodeposition is preferably carried out at a temperature of 15 to 35°C, at a temperature of 12 to 24 A/dm 2 (more preferably, 12 to 18 A/dm 2 ). In addition, the covering plating step is performed in a copper sulfate solution containing a copper concentration of 50-100 g/L and a sulfuric acid concentration of 200-250 g/L at a temperature of 40-60°C and a temperature of 2.3-4A/dm 2 (more preferably 2.5 ~3.5A/dm 2 ) Electrodeposition is better. Especially in the firing step, by adding carboxybenzotriazole within the above concentration range to the plating solution, while maintaining the etching properties close to pure copper, it becomes easy to form bumps on the processed surface that are beneficial to satisfy the above surface parameters. . Furthermore, in the burn plating step and the cover plating step, by lowering the current density than the conventional method to perform electrodeposition, it becomes easier to form bumps on the processed surface that are beneficial to satisfying the above-mentioned surface parameters.

根據需要,粗糙化處理銅箔可為實施防鏽處理,形成防鏽處理層者。防鏽處理較佳為包含使用鋅之鍍敷處理。使用鋅之鍍敷處理可為鋅鍍敷處理及鋅合金鍍敷處理之任一種,鋅合金鍍敷處理特佳為鋅-鎳合金處理。鋅-鎳合金處理若為至少包含Ni及Zn之鍍敷處理即可,亦可進一步包含Sn、Cr、Co等之其他元素。在鋅-鎳合金鍍敷之Ni/Zn附著比率以質量比較佳為1.2~10,更佳為2~7,再更佳為2.7~4。又,防鏽處理較佳為進一步包含鉻酸鹽處理,此鉻酸鹽處理更佳為於使用鋅之鍍敷處理之後,於包含鋅之鍍敷的表面進行。藉由如此進行可進一步提昇防鏽性。特佳之防鏽處理為鋅-鎳合金鍍敷處理與之後之鉻酸鹽處理的組合。According to needs, the roughened copper foil may be subjected to anti-rust treatment to form an anti-rust treatment layer. The anti-rust treatment preferably includes a plating treatment using zinc. The plating treatment using zinc may be either zinc plating treatment or zinc alloy plating treatment, and zinc alloy plating treatment is particularly preferably zinc-nickel alloy treatment. The zinc-nickel alloy treatment may be a plating treatment including at least Ni and Zn, and may further include other elements such as Sn, Cr, and Co. The Ni/Zn adhesion ratio in zinc-nickel alloy plating is preferably 1.2-10, more preferably 2-7, and still more preferably 2.7-4. In addition, the rust prevention treatment preferably further includes a chromate treatment, and this chromate treatment is more preferably performed on the surface of the plating containing zinc after the plating treatment using zinc. By doing so, the rust resistance can be further improved. The best anti-rust treatment is a combination of zinc-nickel alloy plating treatment and subsequent chromate treatment.

根據需要,粗糙化處理銅箔可為於表面實施矽烷偶聯劑處理,形成矽烷偶聯劑層者。藉此,可提昇耐濕性、耐藥品性及與接著劑等之密著性等。矽烷偶聯劑層可藉由適當稀釋矽烷偶聯劑進行塗佈並使其乾燥來形成。作為矽烷偶聯劑之例,可列舉4-縮水甘油基丁基三甲氧基矽烷、3-縮水甘油氧基丙基三甲氧基矽烷等之環氧官能性矽烷偶聯劑,或3-胺基丙基三甲氧基矽烷、N-2(胺基乙基)3-胺基丙基三甲氧基矽烷、N-3-(4-(3-胺基丙氧基)丁氧基)丙基-3-胺基丙基三甲氧基矽烷、N-苯基-3-胺基丙基三甲氧基矽烷等之胺基官能性矽烷偶聯劑,或3-巰基丙基三甲氧基矽烷等之巰基官能性矽烷偶聯劑或乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等之烯烴官能性矽烷偶聯劑,或3-甲基丙烯醯氧基丙基三甲氧基矽烷等之丙烯醯基官能性矽烷偶聯劑或咪唑矽烷等之咪唑官能性矽烷偶聯劑,或三嗪矽烷等之三嗪官能性矽烷偶聯劑等。According to needs, the roughened copper foil can be treated with a silane coupling agent on the surface to form a silane coupling agent layer. This can improve moisture resistance, chemical resistance, and adhesion to adhesives, etc. The silane coupling agent layer can be formed by appropriately diluting the silane coupling agent, coating and drying it. Examples of silane coupling agents include epoxy functional silane coupling agents such as 4-glycidylbutyltrimethoxysilane and 3-glycidoxypropyltrimethoxysilane, or 3-amino group Propyl trimethoxysilane, N-2 (aminoethyl) 3-aminopropyl trimethoxysilane, N-3-(4-(3-aminopropoxy) butoxy) propyl- Amino functional silane coupling agents such as 3-aminopropyltrimethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, or mercapto groups such as 3-mercaptopropyltrimethoxysilane Functional silane coupling agent or olefin functional silane coupling agent such as vinyl trimethoxy silane, vinyl phenyl trimethoxy silane, or propylene such as 3-methacryloxy propyl trimethoxy silane Amino-functional silane coupling agent or imidazole-functional silane coupling agent such as imidazole silane, or triazine-functional silane coupling agent such as triazine silane.

由上述之理由,粗糙化處理銅箔較佳為於粗糙化處理面進一步具備防鏽處理層及/或矽烷偶聯劑層,更佳為具備防鏽處理層及矽烷偶聯劑層雙方。防鏽處理層及矽烷偶聯劑層不僅形成在粗糙化處理銅箔之粗糙化處理面側,亦可形成在於未形成粗糙化處理面之側。For the above reasons, the roughened copper foil preferably further has an antirust treatment layer and/or a silane coupling agent layer on the roughened surface, and more preferably has both the antirust treatment layer and the silane coupling agent layer. The anti-rust treatment layer and the silane coupling agent layer are not only formed on the roughened surface side of the roughened copper foil, but may also be formed on the side where the roughened surface is not formed.

附載體之銅箔 如上述,本發明之粗糙化處理銅箔可以附載體之銅箔的形態提供。亦即,根據本發明之較佳的態樣,提供一種附載體之銅箔,其係具備載體、與設置在載體上之剝離層、與於剝離層上將粗糙化處理面定於外側所設置之上述粗糙化處理銅箔。進而,附載體之銅箔除了使用本發明之粗糙化處理銅箔之外,可採用公知之層構成。Copper foil with carrier As described above, the roughened copper foil of the present invention can be provided in the form of a copper foil with a carrier. That is, according to a preferred aspect of the present invention, there is provided a copper foil with a carrier, which is provided with a carrier, a release layer provided on the carrier, and a roughened surface on the release layer arranged on the outside. The above-mentioned roughening treatment copper foil. Furthermore, the copper foil with a carrier can adopt a well-known layer structure in addition to the roughening process copper foil of this invention.

載體係支持粗糙化處理銅箔,用以提昇該操作性之支持體,通常之載體包含金屬層。作為這般之載體之例,可列舉將鋁箔、銅箔、不銹鋼(SUS)箔、表面以銅等金屬塗佈之樹脂膜或玻璃等,較佳為銅箔。銅箔雖可為壓延銅箔及電解銅箔之任一種,但較佳為電解銅箔。載體的厚度通常而言,為250μm以下,較佳為9~200μm。The carrier system supports the roughened copper foil to improve the operability of the support. The carrier usually contains a metal layer. Examples of such a carrier include aluminum foil, copper foil, stainless steel (SUS) foil, resin film coated with a metal such as copper or glass on the surface, and copper foil is preferred. Although the copper foil may be either a rolled copper foil or an electrolytic copper foil, it is preferably an electrolytic copper foil. The thickness of the carrier is generally 250 μm or less, preferably 9 to 200 μm.

載體之剝離層側的面較佳為平滑。亦即,在附載體之銅箔的製造製程,變成於載體之剝離層側的面(進行粗糙化處理之前)形成極薄銅箔。據此,藉由使載體之剝離層側的面變平滑,極薄銅箔之外側的面亦可變平滑,藉由於此極薄銅箔之平滑面實施粗糙化處理,變成容易實現具有上述指定範圍內的最大高度Sz、界面的展開面積比Sdr及波峰的頂點密度Spd之粗糙化處理面。為了使載體之剝離層側的面變平滑,例如可藉由將電解製箔載體時所使用之陰極的表面以指定號碼之拋光輪進行研磨,調整表面粗糙度來進行。亦即,藉由如此進行所調整之陰極的表面輪廓轉印在載體的電極面,於此載體之電極面上透過剝離層,形成極薄銅箔,可於極薄銅箔之外側的面賦予易實現上述之粗糙化處理面之平滑的表面狀態。較佳之拋光輪之號碼為#2000~#3000,更佳為#2000~#2500。The surface of the carrier on the side of the release layer is preferably smooth. That is, in the manufacturing process of the copper foil with a carrier, an ultra-thin copper foil is formed on the surface of the peeling layer side of the carrier (before the roughening treatment). Accordingly, by smoothing the surface of the carrier on the side of the peeling layer, the surface on the outer side of the ultra-thin copper foil can also be smoothed. By roughening the smooth surface of the ultra-thin copper foil, it becomes easy to achieve the above-mentioned specifications. The roughened surface is the maximum height Sz in the range, the expansion area ratio of the interface Sdr, and the peak density Spd of the wave crest. In order to make the surface of the carrier on the side of the release layer smooth, for example, the surface of the cathode used in the electrolysis of the foil carrier can be polished with a polishing wheel with a designated number to adjust the surface roughness. That is, by transferring the adjusted surface profile of the cathode to the electrode surface of the carrier, the peeling layer is formed on the electrode surface of the carrier to form an ultra-thin copper foil, which can be applied to the outside surface of the ultra-thin copper foil. It is easy to realize the smooth surface state of the above-mentioned roughened surface. Preferably, the number of the polishing wheel is #2000~#3000, more preferably #2000~#2500.

剝離層係具有減弱載體之剝離強度,擔保該強度之安定性,進而在高溫之沖壓成形時,抑制於載體與銅箔之間可引起之相互擴散的機能之層。剝離層形成在載體一側的面雖為一般,但亦可形成在雙面。剝離層可為有機剝離層及無機剝離層之任一種。作為有機剝離層所使用之有機成分之例,可列舉含氮之有機化合物、含硫之有機化合物、羧酸等。作為含氮之有機化合物之例,可列舉三唑化合物、咪唑化合物等,其中,三唑化合物以剝離性容易安定的點來看較佳。作為三唑化合物之例,可列舉1,2,3-苯并三唑、羧基苯并三唑、N’,N’-雙(苯并三唑基甲基)脲、1H-1,2,4-三唑及3-胺基-1H-1,2,4-三唑等。作為含硫之有機化合物之例,可列舉巰基苯并噻唑、硫氰酸(Thiocyanuric acid)、2-苯并咪唑硫醇等。作為羧酸之例,可列舉單羧酸、二羧酸等。另一方面,作為無機剝離層所使用之無機成分之例,可列舉Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn、鉻酸鹽處理膜等。尚,剝離層的形成藉由於載體之至少一側的表面使含有剝離層成分之溶液接觸,使剝離層成分固定在載體的表面等進行即可。使載體與含有剝離層成分之溶液接觸時,此接觸藉由對含有剝離層成分之溶液之浸漬、含有剝離層成分之溶液之噴霧、含有剝離層成分之溶液之流下等進行即可。其他,亦可採用以藉由蒸鍍或濺鍍等之氣相法被膜形成剝離層成分之方法。又,剝離層成分對載體表面之固定,藉由含有剝離層成分之溶液的吸附或乾燥、含有剝離層成分之溶液中之剝離層成分的電沉積等進行即可。剝離層的厚度通常而言,為1nm~1μm,較佳為5nm~500nm。The peeling layer has the function of weakening the peeling strength of the carrier, ensuring the stability of the strength, and suppressing the mutual diffusion that can be caused between the carrier and the copper foil during high-temperature stamping and forming. Although the release layer is formed on the side of the carrier, it is common, but it can also be formed on both sides. The peeling layer may be any one of an organic peeling layer and an inorganic peeling layer. Examples of organic components used in the organic release layer include nitrogen-containing organic compounds, sulfur-containing organic compounds, carboxylic acids, and the like. Examples of nitrogen-containing organic compounds include triazole compounds, imidazole compounds, and the like. Among them, triazole compounds are preferred in terms of easy and stable releasability. Examples of triazole compounds include 1,2,3-benzotriazole, carboxybenzotriazole, N',N'-bis(benzotriazolylmethyl)urea, 1H-1,2, 4-triazole and 3-amino-1H-1,2,4-triazole, etc. Examples of sulfur-containing organic compounds include mercaptobenzothiazole, Thiocyanuric acid, 2-benzimidazole thiol, and the like. As an example of a carboxylic acid, a monocarboxylic acid, a dicarboxylic acid, etc. are mentioned. On the other hand, as examples of the inorganic components used in the inorganic release layer, Ni, Mo, Co, Cr, Fe, Ti, W, P, Zn, chromate treated films, and the like can be cited. The formation of the release layer may be performed by bringing a solution containing the release layer component into contact with the surface of at least one side of the carrier to fix the release layer component on the surface of the carrier. When the carrier is brought into contact with the solution containing the peeling layer component, the contact may be performed by dipping the solution containing the peeling layer component, spraying the solution containing the peeling layer component, or flowing down the solution containing the peeling layer component. In addition, a method of forming a peeling layer component by a vapor deposition method such as vapor deposition or sputtering can also be adopted. In addition, the fixing of the release layer component to the surface of the carrier may be performed by adsorption or drying of the solution containing the release layer component, electrodeposition of the release layer component in the solution containing the release layer component, or the like. The thickness of the peeling layer is generally 1 nm to 1 μm, preferably 5 nm to 500 nm.

根據需要,可於剝離層與載體及/或粗糙化處理銅箔之間設置其他機能層。作為這般之其他機能層之例,可列舉輔助金屬層。輔助金屬層以由鎳及/或鈷所構成較佳。藉由將這般的輔助金屬層形成在載體的表面側及/或粗糙化處理銅箔的表面側,於高溫或長時間之熱壓成形時,抑制於載體與銅箔之間可引起之相互擴散,可擔保載體之剝離強度的安定性。輔助金屬層的厚度較佳為定為0.001~3μm。If necessary, other functional layers can be provided between the peeling layer and the carrier and/or the roughened copper foil. As an example of such other functional layers, an auxiliary metal layer can be cited. The auxiliary metal layer is preferably made of nickel and/or cobalt. By forming such an auxiliary metal layer on the surface side of the carrier and/or the surface side of the roughened copper foil, it suppresses the mutual interaction between the carrier and the copper foil during high-temperature or long-term hot pressing. Diffusion can guarantee the stability of the peel strength of the carrier. The thickness of the auxiliary metal layer is preferably set to 0.001 to 3 μm.

覆銅層合板 本發明之粗糙化處理銅箔,較佳為使用在印刷配線板用覆銅層合板之製作。亦即,根據本發明之較佳之態樣,提供具備上述粗糙化處理銅箔之覆銅層合板。藉由使用本發明之粗糙化處理銅箔,在覆銅層合板的加工,可兼備優異之蝕刻性與高剪切強度。此覆銅層合板係具備本發明之粗糙化處理銅箔、與密著並設置在粗糙化處理銅箔之粗糙化處理面的樹脂層而成。粗糙化處理銅箔可設置在樹脂層之單面,亦可設置在雙面。樹脂層係包含樹脂,較佳為絕緣性樹脂而成。樹脂層較佳為預浸料及/或樹脂片。所謂預浸料,係於合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等之基材含浸合成樹脂之複合材料的總稱。作為絕緣性樹脂的較佳之例,可列舉環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺三嗪樹脂(BT樹脂)、聚苯醚(Polyphenylene ether)樹脂、酚樹脂等。又,作為構成樹脂片之絕緣性樹脂之例,可列舉環氧樹脂、聚醯亞胺樹脂、聚酯樹脂等之絕緣樹脂。又,樹脂層中從提昇絕緣性等之觀點來看,可含有由二氧化矽、氧化鋁等之各種無機粒子所構成填料粒子等。樹脂層的厚度雖並未特別限定,但較佳為1~1000μm,更佳為2~400μm,再更佳為3~200μm。樹脂層可為以複數之層構成。預浸料及/或樹脂片等之樹脂層可透過預先塗佈在銅箔表面之底漆樹脂層,設置在粗糙化處理銅箔。Copper Clad Laminate The roughened copper foil of the present invention is preferably used in the production of copper clad laminates for printed wiring boards. That is, according to a preferred aspect of the present invention, a copper-clad laminate having the above-mentioned roughened copper foil is provided. By using the roughened copper foil of the present invention, it is possible to have both excellent etching properties and high shear strength in the processing of copper clad laminates. This copper clad laminate is provided with the roughened copper foil of the present invention and a resin layer which is closely attached and provided on the roughened surface of the roughened copper foil. The roughened copper foil can be arranged on one side of the resin layer or on both sides. The resin layer contains resin, and is preferably made of insulating resin. The resin layer is preferably a prepreg and/or a resin sheet. The so-called prepreg is a general term for composite materials in which synthetic resin plates, glass plates, glass woven fabrics, glass non-woven fabrics, paper and other substrates are impregnated with synthetic resins. Preferred examples of insulating resins include epoxy resins, cyanate ester resins, bismaleimide triazine resins (BT resins), polyphenylene ether resins, phenol resins, and the like. In addition, examples of insulating resins constituting the resin sheet include insulating resins such as epoxy resins, polyimide resins, and polyester resins. In addition, the resin layer may contain filler particles composed of various inorganic particles such as silica, alumina, etc., from the viewpoint of improving insulation properties and the like. Although the thickness of the resin layer is not particularly limited, it is preferably 1 to 1000 μm, more preferably 2 to 400 μm, and still more preferably 3 to 200 μm. The resin layer may be composed of a plurality of layers. The resin layer of prepreg and/or resin sheet can be set on the roughened copper foil through the primer resin layer pre-coated on the surface of the copper foil.

印刷配線板 本發明之粗糙化處理銅箔較佳為使用在印刷配線板之製作。亦即,根據本發明較佳之態樣,提供一種具備上述粗糙化處理銅箔之印刷配線板。藉由使用本發明之粗糙化處理銅箔,在印刷配線板的製造,可兼備優異之蝕刻性與高剪切強度。藉由本態樣之印刷配線板係包含層合樹脂層、與銅層之層構成而成。銅層係源自本發明之粗糙化處理銅箔之層。又,針對樹脂層,關於覆銅層合板係如上述。無論如何,印刷配線板除了使用本發明之粗糙化處理銅箔之外,可採用公知之層構成。作為有關印刷配線板之具體例,可列舉在對於預浸料之單面或雙面使本發明之粗糙化處理銅箔接著,而硬化形成之層合體之上形成電路之單面或雙面印刷配線板,或多層化此等之多層印刷配線板等。又,作為其他具體例,亦可列舉於樹脂膜上形成本發明之粗糙化處理銅箔,形成電路之可撓性印刷配線板、COF、TAB膠帶等。進而作為其他具體例,可列舉於本發明之粗糙化處理銅箔形成塗佈上述之樹脂層之附樹脂之銅箔(RCC),將樹脂層作為絕緣接著材層層合在上述之印刷基板後,將粗糙化處理銅箔作為配線層之全部或一部分,以改進半加成(modified・semi・additive)(MSAP)法、減成法等之手法形成電路之增層(build-up)配線板,或去除粗糙化處理銅箔,以半加成法形成電路之增層配線板、對半導體積體電路上交互反覆附樹脂之銅箔的層合與電路形成之晶圓上直接增層法(direct build-up on wafer)等。作為更發展性的具體例,亦可列舉將附上述樹脂之銅箔層合在基材形成電路之天線元件、透過接著劑層,層合在玻璃或樹脂膜形成圖型之面板顯示器用電子材料或窗玻璃用電子材料、對本發明之粗糙化處理銅箔塗佈導電性接著劑之電磁波屏障・膜等。尤其是本發明之粗糙化處理銅箔適合MSAP法。例如,藉由MSAP法形成電路的情況下,可採用如圖2所示般之構成。 [實施例]Printed wiring board The roughened copper foil of the present invention is preferably used in the production of printed wiring boards. That is, according to a preferred aspect of the present invention, a printed wiring board provided with the above-mentioned roughened copper foil is provided. By using the roughened copper foil of the present invention, it is possible to have both excellent etching properties and high shear strength in the manufacture of printed wiring boards. The printed wiring board of this aspect is composed of a laminated resin layer and a copper layer. The copper layer is derived from the roughened copper foil layer of the present invention. In addition, regarding the resin layer, the copper clad laminate system is as described above. In any case, in addition to using the roughened copper foil of the present invention, the printed wiring board can adopt a well-known layer structure. As a specific example of a printed wiring board, one or both sides of the prepreg are subjected to the roughening treatment of the copper foil of the present invention and then hardened to form a single-sided or double-sided printed circuit on the laminated body. Wiring boards, or multilayer printed wiring boards with multiple layers. In addition, as other specific examples, the roughened copper foil of the present invention is formed on a resin film to form a flexible printed wiring board, COF, TAB tape, etc., which form a circuit. As another specific example, the roughened copper foil of the present invention can be used to form a resin-coated copper foil (RCC) coated with the above-mentioned resin layer, and the resin layer is laminated as an insulating adhesive layer on the above-mentioned printed circuit board. , The roughened copper foil is used as all or part of the wiring layer, and the build-up wiring board of the circuit is formed by methods such as modified ・semi・additive (MSAP) method, subtractive method, etc. , Or remove the roughened copper foil, form the build-up wiring board of the circuit by the semi-additive method, alternately laminate the copper foil with the resin on the semiconductor integrated circuit and the direct build-up method on the wafer formed by the circuit ( direct build-up on wafer) and so on. As a more developmental specific example, an antenna element in which a copper foil with the above resin is laminated on a substrate to form a circuit, and an electronic material for a panel display in which a pattern is formed by laminating on a glass or resin film through an adhesive layer Or electronic materials for window glass, electromagnetic wave barriers and films coated with conductive adhesive on the roughened copper foil of the present invention. In particular, the roughened copper foil of the present invention is suitable for the MSAP method. For example, in the case of forming a circuit by the MSAP method, a configuration as shown in FIG. 2 can be adopted. [Example]

將本發明藉由以下之例進一步具體說明。The present invention will be further specifically illustrated by the following examples.

例1~8及12~14 將具有粗糙化處理銅箔之附載體之銅箔如以下般進行製作及評估。Examples 1-8 and 12-14 The copper foil with a carrier having a roughened copper foil was produced and evaluated as follows.

(1)載體之準備 使用以下所示之組成之銅電解液、與陰極、與作為陽極之DSA(尺寸安定性陽極),以溶液溫度50℃、電流密度70A/dm2 電解,製作將厚度18μm之電解銅箔作為載體。此時,作為陰極,使用將表面以表1所示之號碼之拋光輪進行研磨,調整表面粗糙度之電極。 <銅電解液的組成> ‐ 銅濃度:80g/L ‐ 硫酸濃度:300g/L ‐ 氯濃度:30mg/L ‐ 膠濃度:5mg/L(1) Preparation of the carrier. Use the copper electrolyte with the following composition, the cathode, and the DSA (Dimensional Stability Anode) as the anode, and electrolyze at a solution temperature of 50°C and a current density of 70A/dm 2 to produce a thickness of 18μm The electrolytic copper foil is used as the carrier. At this time, as the cathode, an electrode whose surface was polished with the number shown in Table 1 was used to adjust the surface roughness. <Composition of copper electrolyte>-Copper concentration: 80g/L-Sulfuric acid concentration: 300g/L-Chlorine concentration: 30mg/L-Glue concentration: 5mg/L

(2)剝離層之形成 將經酸洗處理之載體的電極面於包含羧基苯并三唑(CBTA)濃度1g/L、硫酸濃度150g/L及銅濃度10g/L之CBTA水溶液,以液溫30℃浸漬30秒,使CBTA成分吸附在載體之電極面。如此一來,於載體之電極面將CBTA層作為有機剝離層形成。(2) Formation of peeling layer The electrode surface of the acid-washed carrier was immersed in a CBTA aqueous solution containing a carboxyl benzotriazole (CBTA) concentration of 1 g/L, a sulfuric acid concentration of 150 g/L, and a copper concentration of 10 g/L at a liquid temperature of 30°C for 30 seconds. The CBTA component is adsorbed on the electrode surface of the carrier. In this way, the CBTA layer is formed as an organic release layer on the electrode surface of the carrier.

(3)輔助金屬層之形成 將形成有機剝離層之載體使用硫酸鎳,浸漬在包含經製作之鎳濃度20g/L之溶液,以液溫45℃、pH3、電流密度5A/dm2 的條件,使相當於厚度0.001μm之附著量的鎳附著在有機剝離層上。如此一來,於有機剝離層上將鎳層作為輔助金屬層形成。(3) Formation of the auxiliary metal layer Use nickel sulfate as the carrier to form the organic release layer, and immerse it in a solution containing the prepared nickel concentration of 20g/L under the conditions of a liquid temperature of 45°C, a pH of 3, and a current density of 5A/dm 2 . The adhesion amount of nickel corresponding to a thickness of 0.001 μm was adhered to the organic release layer. In this way, a nickel layer is formed as an auxiliary metal layer on the organic peeling layer.

(4)極薄銅箔之形成 將形成輔助金屬層之載體浸漬在以下所示之組成的銅溶液,以溶液溫度50℃、電流密度5~30A/dm2 電解,使厚度1.5μm之極薄銅箔形成在輔助金屬層上。 <溶液的組成> ‐ 銅濃度:60g/L ‐ 硫酸濃度:200g/L(4) Formation of ultra-thin copper foil The carrier forming the auxiliary metal layer is immersed in a copper solution of the composition shown below, and electrolyzed at a solution temperature of 50°C and a current density of 5-30A/dm 2 to make the thickness of 1.5μm extremely thin The copper foil is formed on the auxiliary metal layer. <The composition of the solution>-Copper concentration: 60g/L-Sulfuric acid concentration: 200g/L

(5)粗糙化處理 於如此進行所形成之極薄銅箔的表面進行粗糙化處理。此粗糙化處理係由於極薄銅箔之上使微細銅粒析出附著之燒鍍步驟、與用以防止此微細銅粒之脫落的覆蓋鍍敷步驟所構成。於燒鍍步驟,於包含銅濃度10g/L及硫酸濃度200g/L之液溫25℃的酸性硫酸銅溶液添加表1所示之濃度之羧基苯并三唑(CBTA),以表1所示之電流密度進行粗糙化處理。於之後之覆蓋鍍敷步驟,使用包含銅濃度70g/L及硫酸濃度240g/L之酸性硫酸銅溶液,以液溫52℃及表1所示之電流密度的平滑鍍敷條件進行電沉積。此時,藉由將在燒鍍步驟之CBTA濃度及電流密度、以及在覆蓋鍍敷步驟之電流密度如表1所示的方式適當變更,製作粗糙化處理表面的特徵不同之各式各樣樣品。(5) Roughening treatment The surface of the ultra-thin copper foil thus formed is roughened. This roughening treatment is composed of a firing step for depositing and adhering fine copper particles on the ultra-thin copper foil, and a covering plating step for preventing the fine copper particles from falling off. In the firing step, add carboxybenzotriazole (CBTA) with the concentration shown in Table 1 to an acid copper sulfate solution containing a copper concentration of 10g/L and a sulfuric acid concentration of 200g/L at a liquid temperature of 25°C, as shown in Table 1. The current density is roughened. In the subsequent cover plating step, an acid copper sulfate solution containing a copper concentration of 70 g/L and a sulfuric acid concentration of 240 g/L was used to perform electrodeposition under smooth plating conditions at a liquid temperature of 52° C. and a current density as shown in Table 1. At this time, by appropriately changing the CBTA concentration and current density in the burning plating step and the current density in the covering plating step as shown in Table 1, various samples with different characteristics of the roughened surface were produced. .

(6)防鏽處理 於所得之附載體之銅箔之粗糙化處理表面,進行由鋅-鎳合金鍍敷處理及鉻酸鹽處理所構成之防鏽處理。首先,使用包含鋅濃度1g/L、鎳濃度2g/L及焦磷酸鉀濃度80g/L之溶液,以液溫40℃、電流密度0.5A/dm2 的條件,於粗糙化處理層及載體的表面進行鋅-鎳合金鍍敷處理。接著,使用包含鉻酸1g/L之水溶液,以pH12、電流密度1A/dm2 之條件,於進行鋅-鎳合金鍍敷處理之表面進行鉻酸鹽處理。(6) Anti-rust treatment The roughened surface of the obtained copper foil with carrier is subjected to anti-rust treatment consisting of zinc-nickel alloy plating treatment and chromate treatment. First, use a solution containing zinc concentration of 1g/L, nickel concentration of 2g/L, and potassium pyrophosphate concentration of 80g/L, at a liquid temperature of 40°C and a current density of 0.5A/dm 2 The surface is subjected to zinc-nickel alloy plating treatment. Then, using an aqueous solution containing 1 g/L of chromic acid, chromate treatment was performed on the surface of the zinc-nickel alloy plating treatment under the conditions of pH 12 and current density of 1 A/dm 2.

(7)矽烷偶聯劑處理 藉由使包含3-縮水甘油氧基丙基三甲氧基矽烷5g/L之水溶液吸附在附載體之銅箔之粗糙化處理銅箔側的表面,由電熱器使水分蒸發,進行矽烷偶聯劑處理。此時,矽烷偶聯劑處理並未於載體側進行。(7) Silane coupling agent treatment By adsorbing an aqueous solution containing 5 g/L of 3-glycidoxypropyltrimethoxysilane on the surface of the roughened copper foil side of the copper foil with a carrier, the water is evaporated by an electric heater to perform the silane coupling agent deal with. At this time, the silane coupling agent treatment was not performed on the carrier side.

(8)評估 針對如此進行所得之附載體之銅箔,如以下進行各種特性之評估。(8) Evaluation For the copper foil with a carrier obtained in this way, various characteristics were evaluated as follows.

(8a)粗糙化處理面的表面性狀參數 藉由使用雷射顯微鏡(基恩士股份有限公司製、VK-X200)之表面粗糙度解析,將粗糙化處理銅箔之粗糙化處理面的測定依據ISO25178進行。具體而言,將粗糙化處理銅箔在粗糙化處理面之面積6812μm2 的區域的表面輪廓在上述雷射顯微鏡以倍率3000倍測定。對於所得之粗糙化處理面的表面輪廓,進行面傾斜校正後,藉由表面性狀解析,實施最大高度Sz、界面的展開面積比Sdr及波峰的頂點密度Spd的測定。此時,Sz之測定將藉由S過濾器之截止波長定為5.0μm計測,將藉由L過濾器之截止波長定為0.025mm計測。另一方面,Sdr及Spd的測定並未進行藉由S過濾器及L過濾器之截止即計測數值。結果係如表1所示。(8a) The surface quality parameters of the roughened surface are analyzed by the surface roughness analysis using a laser microscope (manufactured by Keyence Corporation, VK-X200), and the roughened surface of the roughened copper foil is measured as a basis ISO25178 is carried out. Specifically, the surface profile of the roughened copper foil in an area of 6812 μm 2 of the roughened surface was measured with the above-mentioned laser microscope at a magnification of 3000 times. The surface profile of the obtained roughened surface is corrected for surface inclination, and then the maximum height Sz, the spread area ratio of the interface Sdr, and the peak density Spd of the crest are measured by analyzing the surface properties. At this time, for the measurement of Sz, the cut-off wavelength by the S filter is set to 5.0 μm, and the cut-off wavelength by the L filter is set to be 0.025 mm. On the other hand, the measurement of Sdr and Spd did not perform the cut-off value by the S filter and the L filter. The results are shown in Table 1.

(8b)電路形成性(蝕刻性評估) 使用所得之附載體之銅箔,製作評估用層合體。亦即,於內層基板的表面,透過預浸料(三菱瓦斯化學股份有限公司製、GHPL-830NSF、厚度0.1mm),層合附載體之銅箔之粗糙化處理銅箔,以壓力4.0MPa、溫度220℃熱壓著90分鐘後,剝離載體,得到作為評估用層合體之覆銅層合板。準備複數個此評估用層合體,對於個別之評估用層合體,以不同時間進行藉由硫酸-過氧化氫系蝕刻液之蝕刻,計測至表面之銅完全消失所需要之蝕刻量(深度)。計測藉由以光學顯微鏡(500倍)確認來進行。蝕刻時間的控制藉由變更蝕刻裝置之搬送速度進行。更詳細而言,以蝕刻裝置之搬送速度為1.0m/min時,蝕刻量成為1.60μm的條件,蝕刻量以增大每0.1μm的方式,階段性遲緩搬送速度(亦即,階段性增長蝕刻時間),進行評估用層合體之蝕刻。而且,將從以光學顯微鏡無法檢出殘存銅時之搬送速度所算出之蝕刻量,定為完全去除銅所需要之蝕刻量。例如,以搬送速度為0.5m/min的條件進行蝕刻時,以光學顯微鏡無法檢出殘存銅的情況,需要之蝕刻量成為3.20μm (亦即[(1.0m/min)/(0.5m/min)]×1.60μm=3.20μm)。亦即,意指此值越小可用越少之蝕刻去除表面之銅。換言之,係意指此值越小蝕刻性越良好。將完全去除藉由上述計測所得之銅所需要之蝕刻量用以下之基準進行等級評估,將評估A及B判定為合格。結果係如表1所示。 <蝕刻性評估基準> ‐ 評估A:需要之蝕刻量為2.7μm以下 ‐ 評估B:需要之蝕刻量超過2.7μm且為3.0μm以下 ‐ 評估C:需要之蝕刻量超過3.0μm(8b) Circuit formation (evaluation of etching) Using the obtained copper foil with a carrier, a laminate for evaluation was produced. That is, on the surface of the inner substrate, through a prepreg (manufactured by Mitsubishi Gas Chemical Co., Ltd., GHPL-830NSF, thickness 0.1mm), the roughened copper foil of the carrier-attached copper foil is laminated with a pressure of 4.0 MPa After hot pressing at 220°C for 90 minutes, the carrier was peeled off to obtain a copper-clad laminate as a laminate for evaluation. A plurality of these evaluation laminates were prepared, and for individual evaluation laminates, etching with sulfuric acid-hydrogen peroxide-based etchant was performed at different times, and the etching amount (depth) required to completely disappear the copper on the surface was measured. The measurement is performed by confirming with an optical microscope (500 times). The etching time is controlled by changing the conveying speed of the etching device. In more detail, when the conveying speed of the etching device is 1.0m/min, the etching amount becomes 1.60μm, and the etching amount is increased every 0.1μm, and the conveying speed is gradually slowed down (that is, the etching is gradually increased). Time) to perform etching of the evaluation laminate. In addition, the etching amount calculated from the conveying speed when the remaining copper cannot be detected by the optical microscope is determined as the etching amount required to completely remove the copper. For example, when etching is performed under the condition of a transport speed of 0.5m/min, the remaining copper cannot be detected by an optical microscope, and the required etching amount becomes 3.20μm (that is, [(1.0m/min)/(0.5m/min )]×1.60μm=3.20μm). In other words, it means that the smaller the value, the less etching can be used to remove the copper on the surface. In other words, it means that the smaller the value, the better the etching performance. The etching amount required to completely remove the copper obtained by the above-mentioned measurement was graded using the following criteria, and the evaluations A and B were judged to be pass. The results are shown in Table 1. <Etching Evaluation Criteria> -Evaluation A: The required etching amount is less than 2.7μm -Evaluation B: The required etching amount exceeds 2.7μm and is below 3.0μm -Evaluation C: The amount of etching required exceeds 3.0μm

(8c)鍍敷電路密著性(剪切強度) 於上述之評估用層合體貼合乾膜,進行曝光及顯影。以顯影之乾膜遮蔽的層合體,以圖型鍍敷使厚度13.5μm之銅層析出後,剝離乾膜。以硫酸-過氧化氫系蝕刻液蝕刻暴露出之銅部分,製作高度15μm、寬度10μm、長度150μm之剪切強度測定用電路樣品。使用接合強度試驗機(Nordson DAGE公司製、4000Plus Bondtester),測定將剪切強度測定用電路樣品從橫向向下推時之剪切強度。亦即,如圖3所示,藉由將形成電路136之層合體134載置在移動式平台132上,每個平台132往圖中箭頭方向移動,於預先固定之檢出器138按下電路136,對於電路136之側面,給予橫方向之力推下,將此時之力(gf)在檢出器138測定,將該測定值作為剪切強度採用。此時,測試種類定為破壞試驗,以測試高度10μm、降下速度0.050mm/s、測試速度100.0μm/s、工具移動量0.05mm、破壞認識點10%的條件進行測定。將所得之剪切強度以以下之基準進行等級評估,將評估A及B判定為合格。結果係如表1所示。 <剪切強度評估基準> ‐ 評估A:剪切強度為6.00gf以上 ‐ 評估B:剪切強度為5.00gf以上未滿6.00gf ‐ 評估C:剪切強度未滿5.00gf(8c) Plating circuit adhesion (shear strength) A dry film was attached to the above-mentioned evaluation laminate, followed by exposure and development. After the laminate is covered by the developed dry film, the copper with a thickness of 13.5μm is chromatographed by pattern plating, and then the dry film is peeled off. The exposed copper portion was etched with a sulfuric acid-hydrogen peroxide etching solution to prepare a circuit sample for measuring shear strength with a height of 15 μm, a width of 10 μm, and a length of 150 μm. Using a bonding strength tester (manufactured by Nordson DAGE, 4000Plus Bondtester), the shear strength when the circuit sample for shear strength measurement was pushed down from the lateral direction was measured. That is, as shown in FIG. 3, by placing the laminated body 134 forming the circuit 136 on the movable platform 132, each platform 132 moves in the direction of the arrow in the figure, and the circuit is pressed on the detector 138 fixed in advance. 136. A lateral force is applied to the side of the circuit 136 to push it down, the force (gf) at this time is measured at the detector 138, and the measured value is adopted as the shear strength. At this time, the test type is defined as the destruction test, and the measurement is performed under the conditions of a test height of 10 μm, a lowering speed of 0.050 mm/s, a test speed of 100.0 μm/s, a tool movement amount of 0.05 mm, and a destruction recognition point of 10%. The obtained shear strength was evaluated according to the following criteria, and evaluations A and B were judged to be qualified. The results are shown in Table 1. <Shear strength evaluation standard> -Evaluation A: The shear strength is above 6.00gf -Evaluation B: The shear strength is 5.00gf or more but less than 6.00gf -Evaluation C: Shear strength is less than 5.00gf

例9(比較) 除了將載體的準備用以下所示之順序進行、以及取代燒鍍步驟及覆蓋鍍敷步驟,藉由以下所示之黑色鍍敷步驟,進行極薄銅箔之粗糙化處理之外,其他與例1同樣進行,進行附載體之銅箔之製作及評估。結果係如表1所示。Example 9 (comparison) Except that the preparation of the carrier is carried out in the order shown below, and instead of the burning plating step and the cover plating step, the roughening treatment of the ultra-thin copper foil is carried out by the black plating step shown below, and other examples 1 Proceed in the same way to make and evaluate the copper foil with carrier. The results are shown in Table 1.

(載體的準備) 作為銅電解液,使用以下所示之組成的硫酸酸性硫酸銅溶液,於陰極使用表面粗糙度Ra為0.20μm之鈦製之電極,陽極中使用DSA(尺寸安定性陽極),以溶液溫度45℃、電流密度55A/dm2 電解,將厚度12μm之電解銅箔作為載體獲得。 <硫酸酸性硫酸銅溶液的組成> ‐ 銅濃度:80g/L ‐ 游離硫酸濃度:140g/L ‐ 雙(3-磺基丙基)二硫化物濃度:30mg/L ‐ 二烯丙基二甲基氯化銨聚合物濃度:50mg/L ‐ 氯濃度:40mg/L(Preparation of the carrier) As the copper electrolyte, a sulfuric acid copper sulfate solution with the composition shown below is used, a titanium electrode with a surface roughness Ra of 0.20 μm is used for the cathode, and DSA (Dimensional Stability Anode) is used for the anode. Electrolysis was performed at a solution temperature of 45°C and a current density of 55A/dm 2 to obtain an electrolytic copper foil with a thickness of 12 μm as a carrier. <Composition of sulfuric acid copper sulfate solution>-Copper concentration: 80g/L-Free sulfuric acid concentration: 140g/L-Bis(3-sulfopropyl) disulfide concentration: 30mg/L-Diallyldimethyl Concentration of ammonium chloride polymer: 50mg/L ‐ Concentration of chlorine: 40mg/L

(黑色鍍敷步驟) 對於極薄銅箔之析出面,使用以下所示之組成的黑色粗糙化用銅電解溶液,以溶液溫度30℃、電流密度50A/dm2 、時間4sec的條件進行電解,進行黑色粗糙化。 <黑色粗糙化用銅電解溶液的組成> ‐ 銅濃度:13g/L ‐ 游離硫酸濃度:70g/L ‐ 氯濃度:35mg/L ‐ 聚丙烯酸鈉濃度:400ppm(Black plating step) For the precipitation surface of the ultra-thin copper foil, use the copper electrolytic solution for black roughening with the composition shown below, and electrolyze it under the conditions of a solution temperature of 30°C, a current density of 50A/dm 2 and a time of 4sec. Perform black roughening. <Composition of copper electrolytic solution for black roughening>-Copper concentration: 13g/L-Free sulfuric acid concentration: 70g/L-Chlorine concentration: 35mg/L-Sodium polyacrylate concentration: 400ppm

例10(比較) 除了未於極薄銅箔的表面進行粗糙化處理之外,其他與例1同樣進行,進行附載體之銅箔之製作及評估。結果係如表1所示。Example 10 (comparison) Except that the surface of the ultra-thin copper foil was not roughened, it was carried out in the same manner as in Example 1, and the production and evaluation of the copper foil with a carrier were performed. The results are shown in Table 1.

例11(比較) 除了將燒鍍步驟及覆蓋鍍敷步驟如以下般進行之外,其他與例1同樣進行,進行附載體之銅箔之製作及評估。結果係如表1所示。Example 11 (comparison) Except that the firing step and the cover plating step were carried out as follows, the others were carried out in the same manner as in Example 1, and the production and evaluation of the copper foil with a carrier were performed. The results are shown in Table 1.

(粗糙化處理) 於燒鍍步驟,對包含銅濃度10g/L及硫酸濃度120g/L之液溫25℃之酸性硫酸銅溶液添加2ppm之羧基苯并三唑(CBTA),以電流密度15A/dm2 進行粗糙化處理。於之後之覆蓋鍍敷步驟,使用包含銅濃度70g/L及硫酸濃度120g/L之酸性硫酸銅溶液,以液溫40℃及電流密度15A/dm2 之平滑鍍敷條件進行電沉積。(Roughening treatment) In the firing step, add 2 ppm of carboxybenzotriazole (CBTA) to an acid copper sulfate solution containing copper concentration of 10g/L and sulfuric acid concentration of 120g/L at a liquid temperature of 25°C, with a current density of 15A/ dm 2 is roughened. In the subsequent cover plating step, an acid copper sulfate solution containing a copper concentration of 70 g/L and a sulfuric acid concentration of 120 g/L is used for electrodeposition under smooth plating conditions with a liquid temperature of 40° C. and a current density of 15 A/dm 2.

Figure 02_image001
Figure 02_image001

10‧‧‧極薄銅箔 11a‧‧‧基底基材 11b‧‧‧下層電路 11‧‧‧絕緣樹脂基板 12‧‧‧預浸料 13‧‧‧底漆層 14‧‧‧通孔 15‧‧‧化學鍍銅 16‧‧‧乾膜 17‧‧‧電氣鍍銅 17a‧‧‧配線部分 18‧‧‧配線 132‧‧‧移動式平台 134‧‧‧層合體 136‧‧‧電路 138‧‧‧檢出器10‧‧‧Very thin copper foil 11a‧‧‧Base material 11b‧‧‧Lower layer circuit 11‧‧‧Insulating resin substrate 12‧‧‧Prepreg 13‧‧‧Primer layer 14‧‧‧Through hole 15‧‧‧Chemical copper plating 16‧‧‧Dry film 17‧‧‧Electrical copper plating 17a‧‧‧Wiring part 18‧‧‧Wiring 132‧‧‧Mobile platform 134‧‧‧Laminated body 136‧‧‧Circuit 138‧‧‧Detector

[圖1]為用以說明MSAP法之步驟流程圖,表示前半之步驟(步驟(a)~(d))之圖。 [圖2]為用以說明MSAP法之步驟流程圖,表示後半之步驟(步驟(e)~(g))之圖。 [圖3]為用以說明剪切強度之測定方法之模式圖。[Figure 1] is a flowchart for explaining the steps of the MSAP method, showing the first half of the steps (steps (a) to (d)). [Figure 2] is a flowchart for explaining the steps of the MSAP method, showing the second half of the steps (steps (e) ~ (g)). [Figure 3] is a schematic diagram for explaining the method of measuring shear strength.

Claims (9)

一種粗糙化處理銅箔,其係於至少一側具有粗糙化處理面之粗糙化處理銅箔,其特徵為前述粗糙化處理面依據ISO25178所測定之最大高度Sz、界面的展開面積比Sdr及波峰的頂點密度Spd分別為0.65~1.00μm、1.50~4.20及6.50×106~8.50×106個/mm2A roughened copper foil, which is a roughened copper foil with a roughened surface on at least one side, characterized by the maximum height Sz of the roughened surface measured in accordance with ISO25178, the expansion area ratio of the interface Sdr and the wave peak The vertex densities Spd are 0.65~1.00μm, 1.50~4.20, and 6.50×10 6 to 8.50×10 6 /mm 2 respectively . 如請求項1之粗糙化處理銅箔,其中,前述最大高度Sz為0.65~0.90μm。 Such as the roughened copper foil of claim 1, wherein the aforementioned maximum height Sz is 0.65~0.90μm. 如請求項1之粗糙化處理銅箔,其中,前述界面的展開面積比Sdr為1.80~3.50。 Such as the roughened copper foil of claim 1, wherein the expansion area ratio Sdr of the aforementioned interface is 1.80~3.50. 如請求項1之粗糙化處理銅箔,其中,前述波峰的頂點密度Spd為7.65×106~8.50×106個/mm2For example, the roughened copper foil of claim 1, wherein the apex density Spd of the aforementioned wave crest is 7.65×10 6 to 8.50×10 6 pieces/mm 2 . 如請求項1之粗糙化處理銅箔,其中,前述最大高度Sz、前述界面的展開面積比Sdr及前述波峰的頂點密度Spd的乘積即Sz×Sdr×Spd為7.50×106~2.70×107(μm.個/mm2)。 Such as the roughened copper foil of claim 1, wherein the product of the maximum height Sz, the spread area ratio of the interface Sdr, and the peak density Spd, namely Sz×Sdr×Spd, is 7.50×10 6 to 2.70×10 7 (μm. Pieces/mm 2 ). 如請求項1之粗糙化處理銅箔,其係進一步於前述粗糙化處理面具備防鏽處理層及/或矽烷偶聯劑層。 Such as the roughened copper foil of claim 1, which is further provided with an anti-rust treatment layer and/or a silane coupling agent layer on the roughened surface. 一種附載體之銅箔,其係具備載體、與設置在該載體上之剝離層、與於該剝離層上將前述粗糙化處理面定於外側所設置之如請求項1~6中任一項所記載之粗糙化處理銅箔。 A copper foil with a carrier, which is provided with a carrier, a peeling layer provided on the carrier, and any one of claims 1 to 6 provided on the peeling layer with the aforementioned roughening treatment surface set on the outside The described roughening treatment copper foil. 一種覆銅層合板,其係具備如請求項1~6中任一項所記載之粗糙化處理銅箔。 A copper clad laminate, which is provided with a roughened copper foil as described in any one of claims 1 to 6. 一種印刷配線板,其係具備如請求項1~6中任一項所記載之粗糙化處理銅箔。 A printed wiring board provided with a roughened copper foil as described in any one of claims 1 to 6.
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