TWI617436B - Ultra-thin copper foil with carrier, manufacturing method thereof, copper laminated board and printed wiring board - Google Patents

Ultra-thin copper foil with carrier, manufacturing method thereof, copper laminated board and printed wiring board Download PDF

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TWI617436B
TWI617436B TW105107041A TW105107041A TWI617436B TW I617436 B TWI617436 B TW I617436B TW 105107041 A TW105107041 A TW 105107041A TW 105107041 A TW105107041 A TW 105107041A TW I617436 B TWI617436 B TW I617436B
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Taiwan
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ultra
copper foil
thin copper
carrier
foil
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TW105107041A
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TW201710077A (en
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Daisuke Nakajima
中島大輔
Toru Hanada
花田徹
Kazuhiro Yoshikawa
吉川和広
Yoshinori Shimizu
清水良憲
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Mitsui Mining & Smelting Co., Ltd.
三井金屬鑛業股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/01Layered products comprising a layer of metal all layers being exclusively metallic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laminated Bodies (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)

Abstract

本發明提供一種帶載體超薄銅箔,在銅張積層板的加工以至於印刷配線板的製造中,可以達到兼具雷射鑽孔加工性及微細電路形成性的效果。本發明的帶載體超薄銅箔依序具備有:載體箔、剝離層、及超薄銅箔。於超薄銅箔的剝離層側的面,其表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,且其核心粗糙度深度(core roughness depth)Rk為1.5~3.0μm。於與超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為4.0μm以下。 The invention provides an ultra-thin copper foil with a carrier, which can achieve the effects of both laser drilling processability and fine circuit formation in the processing of copper laminates and the manufacture of printed wiring boards. The ultra-thin copper foil with a carrier of the present invention includes a carrier foil, a release layer, and an ultra-thin copper foil in this order. The surface on the release layer side of the ultra-thin copper foil has an average distance between peaks of the surface (Peak Spacing) of 2.5 to 20.0 μm, and a core roughness depth Rk of 1.5 to 3.0 μm. On the side opposite to the peeling layer side of the ultra-thin copper foil, the maximum height difference Wmax of the undulation was 4.0 μm or less.

Description

帶載體超薄銅箔,及其製造方法,銅張積層板及印刷配線板 Ultra-thin copper foil with carrier, manufacturing method thereof, copper laminated board and printed wiring board

本發明係有關於帶載體超薄銅箔,及其製造方法,銅張積層板及印刷配線板。 The present invention relates to an ultra-thin copper foil with a carrier, a method for manufacturing the same, a copper sheet laminate, and a printed wiring board.

從前,做為印刷配線板的製造工法,廣泛採用減法製程法。減法製程法為一種利用銅箔形成微細電路的方法。例如:如圖1、2所示,在下地基材12a上具有:具備下層電路12b的絕緣樹脂基板12,該絕緣樹脂基板12隔著預浸物14與銅箔10的粗化面黏接(步驟(a)),利用半蝕刻將銅箔10超薄化之後(步驟(b)),適其所需利用雷射鑽孔加工形成通孔16(步驟(c))。接著,進行化學鍍銅18(步驟(d))及電鍍銅20(步驟(e)),藉由利用乾薄膜22做曝光及顯像,遮蔽預定的圖案(步驟(f)),利用蝕刻法將乾薄膜22的開口部下方不需要的銅箔等溶解去除(步驟(g))後,將乾薄膜22剝離(步驟(h)),形成具有預定圖案的配線24。 In the past, the subtractive process method was widely used as a manufacturing method of printed wiring boards. The subtractive process method is a method of forming fine circuits using copper foil. For example, as shown in FIGS. 1 and 2, the lower base material 12 a includes an insulating resin substrate 12 including a lower-layer circuit 12 b, and the insulating resin substrate 12 is bonded to the roughened surface of the copper foil 10 via a prepreg 14 ( In step (a)), after the copper foil 10 is ultra-thinned by half-etching (step (b)), the through hole 16 is formed by laser drilling as appropriate (step (c)). Next, electroless copper plating 18 (step (d)) and electroplated copper 20 (step (e)) are performed, and a predetermined pattern is masked by using the dry film 22 for exposure and development (step (f)), and an etching method is used. After unnecessary copper foils and the like under the opening of the dry film 22 are dissolved and removed (step (g)), the dry film 22 is peeled off (step (h)) to form a wiring 24 having a predetermined pattern.

此外,近年來,對銅張積層板的通孔加工, 常利用雷射對超薄銅箔做直接照射,並形成通孔的直接雷射鑽孔加工法。例如:專利文獻1(JP 2001-326467A)揭示有包含在銅張積層板形成通孔等的凹部之印刷配線板的製造方法,藉由採用做為銅張積層板的外層銅箔之波狀銅箔,可以利用二氧化碳雷射同時除去銅箔及基材樹脂之直接雷射鑽孔法。此外,專利文獻2(JP H11-346060A)揭示有將超薄銅箔的表面施予黑化處理後,利用二氧化碳雷射照射該經黑化處理的表面,在超薄銅箔及其下方的絕緣層進行鑽孔的方法。 In addition, in recent years, through-hole processing of copper laminates has been Lasers are often used to directly irradiate ultra-thin copper foil and form through holes. For example, Patent Document 1 (JP 2001-326467A) discloses a method for manufacturing a printed wiring board including a recessed portion such as a through hole formed in a copper laminated board, by using corrugated copper as an outer copper foil of the copper laminated board. For foil, a direct laser drilling method can be used to simultaneously remove copper foil and substrate resin using carbon dioxide laser. In addition, Patent Document 2 (JP H11-346060A) discloses that after the surface of an ultra-thin copper foil is subjected to a blackening treatment, the blackened surface is irradiated with a carbon dioxide laser to insulate the ultra-thin copper foil and the insulation thereunder. Layer for drilling.

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]JP 2001-326467 A [Patent Document 1] JP 2001-326467 A

[專利文獻2]JP H11-346060 A [Patent Document 2] JP H11-346060 A

[專利文獻3]JP H9-241882 A [Patent Document 3] JP H9-241882 A

但是,像是專利文獻1所揭示的利用波狀銅箔的方法,雖然雷射鑽孔的加工性高,但是也有微細電路形成性劣化的可能,因此,期望能在確保高的雷射鑽孔加工性的同時,更加提升微細電路的形成性。另一方面,像是專利文獻2所揭示的黑化處理,除了需要時間及成本,也會造成產量低下,所以期望能不進行黑化處理而直接在 超薄銅箔表面進行雷射鑽孔加工,以便能達到良好的狀態。 However, the method using the corrugated copper foil disclosed in Patent Document 1 has high workability of laser drilling, but may also deteriorate the formation of fine circuits. Therefore, it is desirable to ensure high laser drilling. At the same time of workability, the formation of fine circuits is further improved. On the other hand, as for the blackening treatment disclosed in Patent Document 2, in addition to the time and cost, the yield is also low. Therefore, it is desirable to directly perform the blackening treatment without performing the blackening treatment. The surface of the ultra-thin copper foil is laser-drilled to achieve a good condition.

本發明的發明者們發現:在這次的帶載體超薄銅箔中,藉由提供使超薄銅箔的剝離層側的面之表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,且其核心粗糙度深度(core roughness depth)Rk為1.5~3.0μm,於與超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為4.0μm以下的分佈的表面輪廓,在銅張積層板的加工以至於印刷配線板的製造中,可以達到兼具雷射鑽孔加工性及微細電路形成性的效果。 The inventors of the present invention have found that in this ultra-thin copper foil with a carrier, by providing an average distance (Peak Spacing) between surface peaks of the surface of the release layer side of the ultra-thin copper foil, 2.5 to 20.0 μm, The core roughness depth Rk is 1.5 to 3.0 μm. On the opposite side of the peeling layer side of the ultra-thin copper foil, the maximum height difference Wmax of the distribution is 4.0 μm or less. The processing of the copper laminated board and the manufacture of the printed wiring board can achieve the effects of both laser drillability and fine circuit formation.

因此,本發明的目的為提供一種帶載體超薄銅箔,其在銅張積層板的加工以至於印刷配線板的製造中,可以達到兼具雷射鑽孔加工性及微細電路形成性的效果。 Therefore, the object of the present invention is to provide an ultra-thin copper foil with a carrier, which can achieve the effects of both laser drilling processability and fine circuit formation in the processing of copper laminates and the manufacture of printed wiring boards. .

依照本發明的一種態樣,提供一種在依序具備有:載體箔、剝離層、及超薄銅箔的帶載體超薄銅箔中:於前述超薄銅箔的剝離層側的面,其表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,且其核心粗糙度深度(core roughness depth)Rk為1.5~3.0μm;於與前述超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為4.0μm以下。 According to one aspect of the present invention, there is provided a carrier-side ultra-thin copper foil including a carrier foil, a release layer, and an ultra-thin copper foil in order: a surface on the release layer side of the ultra-thin copper foil, The average peak distance between the surface peaks (Peak Spacing) is 2.5 to 20.0 μm, and its core roughness depth Rk is 1.5 to 3.0 μm. On the opposite side of the peeling layer side of the ultra-thin copper foil, the The maximum height difference Wmax of the undulation is 4.0 μm or less.

依照本發明的另一種態樣,提供一種製造上述態樣中的帶載體超薄銅箔的製造方法,包含: 準備具有:谷間的平均距離(Valley Spacing)為2.5~20.0μm,且核心粗糙度深度(core roughness depth)Rk為2.0~3.8μm之表面的載體箔之步驟;在前述載體箔的前述表面形成剝離層之步驟;在前述載體箔的前述表面形成超薄銅箔之步驟。 According to another aspect of the present invention, a manufacturing method for manufacturing the ultra-thin copper foil with a carrier in the above aspect is provided, including: A step of preparing a carrier foil having a surface having an average distance between valleys (Valley Spacing) of 2.5 to 20.0 μm and a core roughness depth Rk of 2.0 to 3.8 μm; forming a peel on the aforementioned surface of the aforementioned carrier foil A step of forming a layer; a step of forming an ultra-thin copper foil on the aforementioned surface of the aforementioned carrier foil.

依照本發明的再另一種態樣,提供一種具備如上述態樣之帶載體超薄銅箔的銅張層積板。 According to still another aspect of the present invention, there is provided a copper sheet laminate including the ultra-thin copper foil with a carrier as described above.

依照本發明的再另一種態樣,提供一種利用上述態樣之帶載體超薄銅箔以製造印刷配線板為特徵的印刷配線板製造方法。 According to still another aspect of the present invention, there is provided a printed wiring board manufacturing method using the above-mentioned ultra-thin copper foil with a carrier to produce a printed wiring board.

12a‧‧‧下地基材 12a‧‧‧ground substrate

12b‧‧‧下層電路 12b‧‧‧Lower circuit

12‧‧‧絕緣樹脂基板 12‧‧‧ insulating resin substrate

14‧‧‧預浸物 14‧‧‧ Prepreg

10‧‧‧銅箔 10‧‧‧ Copper foil

16‧‧‧通孔 16‧‧‧through hole

18‧‧‧化學鍍銅 18‧‧‧Electroless copper plating

20‧‧‧電鍍銅 20‧‧‧ Electroplated copper

22‧‧‧乾薄膜 22‧‧‧ dry film

24‧‧‧配線 24‧‧‧ Wiring

32‧‧‧核心部 32‧‧‧ Core Department

34‧‧‧高突出峰部 34‧‧‧ high protruding peak

36‧‧‧深突出谷部 36‧‧‧ deep protruding valley

30‧‧‧粗糙曲線 30‧‧‧ Rough curve

32a‧‧‧上側等級 32a‧‧‧Upgrade

32b‧‧‧下側等級 32b‧‧‧ lower level

[圖1]說明減法製程法的步驟流程圖,前半為表示步驟(步驟(a)~(d))的圖。 [Fig. 1] A flowchart showing the steps of the subtraction process. The first half is a diagram showing steps (steps (a) to (d)).

[圖2]說明減法製程法的步驟流程圖,前半為表示步驟(步驟(e)~(h))的圖。 [Fig. 2] A flowchart showing the steps of the subtraction process. The first half is a diagram showing steps (steps (e) to (h)).

[圖3]定義核心粗糙度深度(core roughness depth)Rk的說明斷面圖。 [Fig. 3] An explanatory sectional view defining a core roughness depth Rk.

[實施形態] [Embodiment] 定義 definition

本發明之特定參數的定義如下。 The specific parameters of the invention are defined as follows.

本說明書的「表面峰值間的平均距離(Peak spacing)」為:從利用立體表面構造解析顯微鏡所測得的有關樣本表面的凹凸相關資訊,去除起伏的成份後,將有關峰值的波形數據過濾掉並抽出的數據中,其峰值之間的平均距離。 The “Peak spacing” on the surface of this specification is: from the information about the unevenness of the sample surface measured by a stereo surface structure analysis microscope, removing the undulating components, and filtering the waveform data about the peaks And the average distance between the peaks in the extracted data.

本說明書的「谷間的平均距離(Valley spacing)」為:從利用立體表面構造解析顯微鏡所測得的有關樣本表面的凹凸相關資訊,去除起伏的成份後,將有關谷的波形數據過濾掉並抽出的數據中,其谷間的平均距離。 The "Valley spacing" in this specification is: from the information about the unevenness of the sample surface measured by a stereo surface structure analysis microscope, after removing the undulating components, the waveform data about the valley is filtered out and extracted In the data, the average distance between its valleys.

本說明書的「核心粗糙度深度(core roughness depth)Rk」為:以JIS B 0671-2:2002為準據所決定得到的參數,如圖3所示,粗糙曲線30的核心部(roughness core profile)32的上側等級32a與下側等級32b之差;該「粗糙曲線的核心部」30為:將高突出峰部34及深突出谷部36從粗糙曲線中去除的曲線。而且,如圖3所示的粗糙曲線30為從相當於評價長度ln的部分取出的部分,右側為表示參考用的等價曲線38。 The “core roughness depth Rk” in this specification is a parameter determined in accordance with JIS B 0671-2: 2002. As shown in FIG. 3, the core portion of the roughness curve 30 (roughness core profile) The difference between the upper level 32a and the lower level 32b of 32); The "core portion of the rough curve" 30 is a curve in which the high protruding peak portion 34 and the deep protruding valley portion 36 are removed from the rough curve. The rough curve 30 shown in FIG. 3 is a portion taken from a portion corresponding to the evaluation length ln, and the right side is an equivalent curve 38 for reference.

本說明書的「起伏的最大高低差Wmax」為:從利用立體表面構造解析顯微鏡所測得的有關樣本表面的凹凸相關資訊,利用濾光片將有關於起伏的波形數據抽出時的波形數據的高低差之最大值(波形的最大峰值高與最大谷深之和)。 The "maximum height difference Wmax" of this specification is: from the information on the unevenness of the sample surface measured by a stereo surface structure analysis microscope, the height of the waveform data when the waveform data about the fluctuation is extracted by using a filter The maximum difference (the sum of the maximum peak height and maximum valley depth of the waveform).

本說明書的「十點平均粗糙度Rzjis」為:以JIS B 0601:2001為準據所決定得到的參數,於基準長度的粗糙曲線中,從最高的山頂算起到第5高的高度之山高的平均值,及從最深的山頂算起到第5深的深度之谷深的平均值,其山高的平均值與谷深的平均值之和。 The "ten-point average roughness Rzjis" in this specification is a parameter determined based on JIS B 0601: 2001. The rough height curve of the reference length is calculated from the highest peak to the fifth highest height. And the average value of the valley depth from the deepest peak to the fifth-deepest depth, the sum of the average value of the height of the mountain and the average depth of the valley.

表面峰值間的平均距離(Peak spacing)、谷間的平均距離(Valley spacing)、核心粗糙度深度(core roughness depth)Rk、起伏的最大高低差Wmax、及十點平均粗糙度Rzjis任一者,都可用市售的立體表面構造解析顯微鏡(例如:zygo New View 5032(Zygo社製))及市售的解析軟體(例如:Metro Pro Ver.8.0.2),以低周波濾光片11μm為條件設定而測得。此時,較佳為:將箔的非測定面與樣本台緊密地固定,在樣本片的1cm角的範圍內,以108μm×144μm的視野選擇6點測定,將從該6點的測定點所得到的測定值的平均值,採用為代表值。 Either the peak spacing of the surface (Peak spacing), the valley spacing (Valley spacing), the core roughness depth (core roughness depth) Rk, the maximum height difference Wmax, and the ten-point average roughness Rzjis, any of A commercially available three-dimensional surface structure analysis microscope (for example: zygo New View 5032 (manufactured by Zygo)) and a commercially available analysis software (for example: Metro Pro Ver. 8.0.2) can be set under the condition of a low-frequency filter 11 μm And measured. In this case, it is preferable that the non-measurement surface of the foil and the sample stage are tightly fixed, and within a range of 1 cm of the sample piece, 6 points are selected for measurement with a field of view of 108 μm × 144 μm, and the 6 points are selected from the measurement points. The average value of the obtained measured values is adopted as a representative value.

於本說明書,載體箔的「電極面」為製作載體箔時與陰極所連接之側的面。 In this specification, the "electrode surface" of the carrier foil is the surface on the side connected to the cathode when the carrier foil is produced.

於本說明書,載體箔的「析出面」為製作載體箔時電解銅析出側的面,也就是指不與陰極相連接之側的面。 In this specification, the "precipitation surface" of the carrier foil is the surface on the precipitation side of the electrolytic copper when the carrier foil is produced, that is, the surface on the side not connected to the cathode.

帶載體超薄銅箔及其製造方法 Ultra-thin copper foil with carrier and manufacturing method thereof

本發明的帶載體超薄銅箔依序具備有:載體箔、剝離層、及超薄銅箔。而且,於超薄銅箔的剝離層側的面,其 表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,且其核心粗糙度深度(core roughness depth)Rk為1.5~3.0μm。此外,於與超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為4.0μm以下。藉此,銅張積層板的加工以至於印刷配線板的製造,可以同時達到兼具雷射鑽孔加工性及微細電路形成性的效果。而且,為了要確保雷射鑽孔的加工性,在本發明中並不需要到目前為止被一般所採用的黑化處理。 The ultra-thin copper foil with a carrier of the present invention includes a carrier foil, a release layer, and an ultra-thin copper foil in this order. Moreover, on the surface of the release layer side of the ultra-thin copper foil, the The average peak distance between the surface peaks (Peak Spacing) is 2.5 to 20.0 μm, and its core roughness depth Rk is 1.5 to 3.0 μm. In addition, the maximum height difference Wmax of the undulation on the side opposite to the release layer side of the ultra-thin copper foil is 4.0 μm or less. Thereby, the processing of the copper laminated board and the manufacture of the printed wiring board can simultaneously achieve the effects of both laser drillability and fine circuit formation. Furthermore, in order to ensure the workability of laser drilling, the present invention does not require a blackening treatment which has been conventionally used.

本來,若不對超薄銅箔施以黑化處理的話,很難達到兼具雷射鑽孔加工性及微細電路形成性的效果,但本發明係在預期外能同時達到此種效果。本來,為了得到優良的微細電路形成性,與剝離層相反側的表面要求是平滑的超薄銅箔。因此,為了得到這種超薄銅箔,剝離層側的面要求是平滑的超薄銅箔,這種平滑的表面使得雷射變得容易被反射,所以,雷射將變得不容易被超薄銅箔吸收,導致雷射鑽孔的加工性降低。實際上,如同前述,像是專利文獻1所揭示的利用波狀銅箔的方法,雖然雷射鑽孔的加工性高,但是也有微細電路形成性劣化的可能。為了解決此問題,本發明的帶載體超薄銅箔,可以在確保高雷射鑽孔加工性的同時,也提升微細電路的形成性。由以下的方法可以實現這種兼具雷射鑽孔加工性及微細電路形成性的效果。也就是說,藉由使超薄銅箔的剝離層側的面的核心部之等級差Rk為1.5μm以上,且使超薄銅箔的剝離層側的面的表面峰值間的平均距離(Peak Spacing)為 2.5~20.0μm,可以實現高直接雷射鑽孔加工性。特別是,如圖3所示,核心部32粗糙度深度(core roughness depth)Rk與十點平均粗糙度Rzjis相異;核心粗糙度深度(core roughness depth)Rk為:將高突出峰部34及深突出谷部36從粗糙曲線30中去除所得到的曲線,基於該曲線其上側等級32a及下側等級32b之間的差,所以Rk可以說是規定箔表面的微小空間所得到的參數。因此,意味著Rk的值若越高空間則會越大,因雷射的反射使得高空間變得容易蓄存熱量(也就是說因為雷射的反射使得熱儲存的空間變大)。此外,由於表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,粗糙峰值間變得緊密,所照射的雷射變得容易被吸收,也就是說容易轉換成熱量。因此,做為控制Rk及控制Peak Spacing間的相乘效果,可以提升直接雷射鑽孔加工性。此後,藉由使超薄銅箔的剝離層側的面的核心部之等級差Rk為3.0μm以下,且使於與超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為4.0μm以下,可以不使這種高雷射鑽孔加工性降低,並可以實現提升微細電路的形成性的效果。也就是說,本發明的發明者們發現使微細電路的形成性降低的主要的原因:是由於在與超薄銅箔的剝離層側相反之面中的起伏,控制該起伏的最大高低差(Wmax)為4.0μm以下,有助於微細電路形成性的改善。特別是,因為起伏的最大高低差Wmax的上限值4.0μm不是極低的值,因此,於與銅箔的剝離層側相反之面並不要求有極度平滑性(典 型的粗糙化)的減法製程法,特別適用於此表面輪廓。此外,減法製程法以外的方法(例如:MSAP(改良半加成法))亦適用。不管如何,在本發明的帶載體超薄銅箔中,藉由控制超薄銅箔(特別是減法製程法用的超薄銅箔)中的Peak spacing、Rk、及Wmax,可以在具有優良的直接電射鑽孔加工性的同時,並可實現適用於形成線/空間=30μm以下/30μm以下的電路所期望的微細電路的形成性。 Originally, if the ultra-thin copper foil was not blackened, it would be difficult to achieve the effects of both laser drilling processability and fine circuit formation, but the present invention can achieve such effects at the same time unexpectedly. Originally, in order to obtain excellent fine circuit formation, the surface on the opposite side of the release layer is required to be a smooth ultra-thin copper foil. Therefore, in order to obtain such an ultra-thin copper foil, the surface on the side of the release layer must be a smooth ultra-thin copper foil. This smooth surface makes the laser easily reflected, so the laser will not be easily superimposed. Absorption by thin copper foil leads to a decrease in the workability of laser drilling. In fact, as mentioned above, the method using the corrugated copper foil disclosed in Patent Document 1 has high workability of laser drilling, but may also deteriorate the formation of fine circuits. In order to solve this problem, the ultra-thin copper foil with a carrier of the present invention can improve the formability of fine circuits while ensuring high laser drillability. The following method can achieve the effect of having both laser drilling workability and fine circuit formation property. That is, the average distance between the peaks of the surface of the surface of the peeling layer side of the ultra-thin copper foil is increased by setting the difference Rk of the core portion of the surface of the surface of the peeling layer side of the ultrathin copper foil to 1.5 μm or more Spacing) is 2.5 ~ 20.0μm, can realize high direct laser drilling workability. In particular, as shown in FIG. 3, the core roughness depth Rk of the core portion 32 is different from the ten-point average roughness Rzjis; the core roughness depth Rk is: the high protruding peak portion 34 and The deep protruding valley portion 36 is a curve obtained by removing the rough curve 30. Based on the difference between the upper level 32a and the lower level 32b of this curve, Rk can be said to be a parameter obtained by defining a minute space on the surface of the foil. Therefore, it means that the higher the value of Rk, the larger the space will be. The reflection of the laser makes it easy to store heat in the high space (that is, the space of heat storage becomes larger because of the reflection of the laser). In addition, since the average distance between peaks on the surface (Peak Spacing) is 2.5 to 20.0 μm, the rough peaks become denser, and the irradiated laser becomes easier to be absorbed, that is, it is easily converted into heat. Therefore, as a multiplication effect between controlling Rk and controlling Peak Spacing, the direct laser drilling processability can be improved. Thereafter, the maximum step height difference Wmax of the undulation of the core portion of the surface on the release layer side of the ultra-thin copper foil is set to be 3.0 μm or less, and on the surface opposite to the release layer side of the ultra-thin copper foil When it is 4.0 μm or less, it is possible to achieve an effect of improving the formability of a fine circuit without reducing the high laser drilling processability. In other words, the inventors of the present invention have found that the main reason for reducing the formability of fine circuits is because of the undulations on the side opposite to the peeling layer side of the ultra-thin copper foil, and the maximum height difference of the undulations is controlled ( Wmax) is 4.0 μm or less, which contributes to improvement of fine circuit formation. In particular, since the upper limit value of the maximum undulation Wmax of 4.0 μm is not an extremely low value, extreme smoothness is not required on the side opposite to the peeling layer side of the copper foil. (Subject to roughening), which is particularly suitable for this surface profile. In addition, methods other than the subtraction process method (for example, MSAP (Modified Semi-Additive Method)) are also applicable. In any case, in the ultra-thin copper foil with a carrier of the present invention, by controlling the Peak spacing, Rk, and Wmax in the ultra-thin copper foil (especially the ultra-thin copper foil used in the subtractive process method), the In addition to direct electron beam drilling processability, it is possible to realize the formation of a fine circuit suitable for forming a circuit having a line / space = 30 μm or less / 30 μm or less.

於是,超薄銅箔具有:其表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,且其核心粗糙度深度(core roughness depth)Rk為1.5~3.0μm的剝離層側的面,且具有起伏的最大高低差Wmax為4.0μm以下的與剝離層相反側的面。藉由使該等參數在上述範圍內,銅張積層板的加工以至於印刷配線板的製造,可以同時達到兼具雷射鑽孔加工性及微細電路形成性的效果。於超薄銅箔的剝離層側的面,其表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,較佳為6.5~15.0μm。於超薄銅箔的剝離層側的面,其核心粗糙度深度(core roughness depth)Rk為1.5~3.0μm,較佳為2.0~3.0μm。此外,於與超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為4.0μm以下,較佳為3.0μm以下,更佳為2.5μm以下。特別是,為了形成線/空間=25μm以下/25μm以下的微細電路,超薄銅箔表面的Wmax為3.0μm以下為較佳。因為Wmax係越低越好,雖不特別限定其下限值,但 Wmax典型為0.1μm以上,更典型為0.2μm以上。 Therefore, the ultra-thin copper foil has a surface on the side of the release layer whose average peak distance between the peaks (Peak Spacing) is 2.5 to 20.0 μm, and whose core roughness depth Rk is 1.5 to 3.0 μm, and The surface on the opposite side to the peeling layer having a maximum height difference Wmax of 4.0 μm or less. By making these parameters within the above range, the processing of the copper laminated board and the manufacture of the printed wiring board can simultaneously achieve the effects of both laser drillability and fine circuit formation. The surface on the release layer side of the ultra-thin copper foil has an average distance between peaks (Peak Spacing) of 2.5 to 20.0 μm, and preferably 6.5 to 15.0 μm. The surface on the side of the release layer of the ultra-thin copper foil has a core roughness depth Rk of 1.5 to 3.0 μm, preferably 2.0 to 3.0 μm. In addition, on the side opposite to the release layer side of the ultra-thin copper foil, the maximum height difference Wmax of the undulation is 4.0 μm or less, preferably 3.0 μm or less, and more preferably 2.5 μm or less. In particular, in order to form a fine circuit with a line / space = 25 μm or less / 25 μm or less, it is preferable that the Wmax on the surface of the ultra-thin copper foil is 3.0 μm or less. The lower the Wmax, the better. Although the lower limit is not particularly limited, Wmax is typically 0.1 μm or more, and more typically 0.2 μm or more.

超薄銅箔的剝離層側的面,十點平均粗糙度Rzjis較佳為2.0~4.0μm,更佳為2.5~4.0μm。在該範圍內可以有助於達到雷射鑽孔加工性與微細電路形成性的平衡。另一方面,於與超薄銅箔的剝離層相反側的面,十點平均粗糙度Rzjis較佳為4.0μm以下,更佳為3.0μm以下,再更佳為2.5μm以下。在該範圍內可以有助於提升微細電路形成性。十點平均粗糙度Rzjis從與樹脂層間的密著性之觀點來看,典型為0.5μm以上,更典型為1.0μm以上。 The ten-point average roughness Rzjis of the surface on the release layer side of the ultra-thin copper foil is preferably 2.0 to 4.0 μm, and more preferably 2.5 to 4.0 μm. Within this range, it can contribute to the balance between laser drilling processability and fine circuit formation. On the other hand, on the side opposite to the release layer of the ultra-thin copper foil, the ten-point average roughness Rzjis is preferably 4.0 μm or less, more preferably 3.0 μm or less, and even more preferably 2.5 μm or less. Within this range, it can contribute to the improvement of fine circuit formation. The ten-point average roughness Rzjis is typically 0.5 μm or more, and more typically 1.0 μm or more, from the viewpoint of adhesion with the resin layer.

與超薄銅箔的剝離層側相反之面為粗化面較佳。也就是說,在超薄銅箔的一面施予粗糙化處理為較佳。藉此,於製造銅張積層板及印刷配線板時,可以提升與樹脂層之間的密著性。該粗糙化處理中,較佳為使用包含:於超薄銅箔上使微細銅粒析出附著的燒附鍍膜工程、及防止該微細銅粒脫落的覆蓋鍍膜工程,這種至少2種類的習知鍍膜工程方法。與超薄銅箔的剝離層側相反之面為粗化面,而且,滿足上述的十點平均粗糙度Rzjis為較佳。 The surface opposite to the release layer side of the ultra-thin copper foil is preferably a roughened surface. That is, it is preferable to apply a roughening treatment to one side of the ultra-thin copper foil. Thereby, when manufacturing a copper laminated board and a printed wiring board, the adhesiveness with a resin layer can be improved. In this roughening treatment, it is preferable to use at least two kinds of conventional methods including a firing coating process for depositing and depositing fine copper particles on an ultra-thin copper foil and a coating process for preventing the fine copper particles from falling off. Coating Engineering Method. The surface opposite to the peeling layer side of the ultra-thin copper foil is a roughened surface, and it is preferable to satisfy the above-mentioned ten-point average roughness Rzjis.

超薄銅箔除了上述具有特有的表面輪廓以外,也不特別限定採用帶載體超薄銅箔的習知構造。例如:超薄銅箔,可使用無電解鍍銅法及電解鍍銅法等濕式等成膜法、濺鍍及化學蒸鍍等乾式成膜法、或組合該等方法所形成。超薄銅箔的厚度較佳為0.5~5.0μm。例如:為 了形成線/空間=25μm以下/25μm以下的微細電路,超薄銅箔表面的Wmax為3.0μm以下為較佳。 In addition to the above-mentioned unique surface profile, the ultra-thin copper foil is not particularly limited to a conventional structure using an ultra-thin copper foil with a carrier. For example, ultra-thin copper foil can be formed by using a wet film formation method such as electroless copper plating method and electrolytic copper plating method, a dry film formation method such as sputtering and chemical vapor deposition, or a combination of these methods. The thickness of the ultra-thin copper foil is preferably 0.5 to 5.0 μm. For example: In order to form a fine circuit with a line / space = 25 μm or less / 25 μm or less, it is preferable that the Wmax on the surface of the ultra-thin copper foil is 3.0 μm or less.

剝離層為具有下列機能的層:使載體箔的剝除強度減弱、確保該強度的安定性、及抑制在高溫的壓印成形時載體箔與銅箔間容易引起的相互擴散。剝離層一般為形成於載體箔的一面,但也可以形成於兩面。剝離層不管是有機剝離層或無機剝離層都可以。做為使用於有機剝離層的有機成份之例為:含有氮的有機化合物、含有硫的有機化合物、羧酸等。做為含有氮的有機化合物例如:三唑化合物,咪唑化合物等,其中從三唑化合物的剝離性安定性來看為較佳。做為三唑化合物之例為:1,2,3-苯並三唑、羧基苯並三唑、N',N'-雙(苯並三唑基甲基)脲、1H-1,2,4-三唑、及3-氨基-1H-1,2,4-三唑等。做為含有硫的有機化合物例如:巰基苯,硫氰尿酸,2-苯並咪唑硫醇等。羧酸之例為:單羧酸,二羧酸等。另一方面,做為使用於無機剝離層的無機成份之例為:Ni、Mo、Co、Cr、Fe、Ti、W、P、Zn、鉻酸鹽處理膜等。此外,形成剝離層可使用:在載體箔的至少一表面上接觸含有剝離層成份的溶液,使剝離層成分固定於載體箔的表面等方法。使載體箔接觸含有剝離層成份的溶液的情形,該接觸為:浸漬於含有剝離層成份的溶液、含有剝離層成份的溶液的噴霧、及含有剝離層成份的溶液的流下等。另外,也可以採用蒸鍍或濺鍍法等氣相法覆膜形成剝離層成份。此外,使剝離層成份固定於載體箔表面為:含有剝離層成份的溶液的吸附 及乾燥、含有剝離層成份的溶液中剝離層成份的電沉積等。剝離層的厚度,典型為1nm~1μm,較佳為5nm~500nm。 The release layer is a layer having the following functions: weakening the peeling strength of the carrier foil, ensuring stability of the strength, and suppressing interdiffusion between the carrier foil and the copper foil which is easily caused during high-temperature imprint molding. The release layer is generally formed on one side of the carrier foil, but may be formed on both sides. The release layer may be either an organic release layer or an inorganic release layer. Examples of the organic component used in the organic release layer include an organic compound containing nitrogen, an organic compound containing sulfur, and a carboxylic acid. As the nitrogen-containing organic compound, for example, a triazole compound, an imidazole compound, and the like, among them, it is preferable from the standpoint of the release stability of the triazole compound. Examples of triazole compounds are: 1,2,3-benzotriazole, carboxybenzotriazole, N ', N'-bis (benzotriazolylmethyl) urea, 1H-1,2, 4-triazole, and 3-amino-1H-1,2,4-triazole. Examples of organic compounds containing sulfur include mercaptobenzene, thiocyanuric acid, 2-benzimidazolethiol, and the like. Examples of carboxylic acids are: monocarboxylic acids, dicarboxylic acids, and the like. On the other hand, examples of the inorganic component used in the inorganic release layer include Ni, Mo, Co, Cr, Fe, Ti, W, P, Zn, and a chromate-treated film. The release layer can be formed by contacting at least one surface of the carrier foil with a solution containing a release layer component and fixing the release layer component to the surface of the carrier foil. When the carrier foil is brought into contact with a solution containing a release layer component, the contact includes immersion in a solution containing a release layer component, spraying of a solution containing a release layer component, and flowing down of a solution containing a release layer component. In addition, a vapor-phase coating such as a vapor deposition method or a sputtering method may be used to form the release layer component. In addition, fixing the release layer component to the surface of the carrier foil is: adsorption of a solution containing the release layer component And dry, electrodeposition of the release layer components in the solution containing the release layer components. The thickness of the release layer is typically 1 nm to 1 μm, and preferably 5 nm to 500 nm.

載體箔為:支持超薄銅箔且為了使其處理性提升之箔。做為載體箔之例為:鋁箔、銅箔、不銹鋼(SUS)箔、表面塗佈金屬之樹脂膜等,較佳為銅箔。銅箔不管是壓延銅箔或電解銅箔都可以。載體箔的厚度典型為250μm以下,較佳為12μm~200μm。 The carrier foil is a foil that supports ultra-thin copper foil and improves handling properties. Examples of the carrier foil include aluminum foil, copper foil, stainless steel (SUS) foil, and resin film coated with metal on the surface. Copper foil is preferred. The copper foil may be a rolled copper foil or an electrolytic copper foil. The thickness of the carrier foil is typically 250 μm or less, and preferably 12 μm to 200 μm.

於載體箔的剝離層側的面,其谷間的平均距離(Valley spacing)為2.5~20.0μm,且其核心粗糙度深度(core roughness depth)Rk較佳為2.0~3.8μm。於帶載體超薄銅箔的製造過程中,為了在載體箔的剝離層側的面形成超薄銅箔,藉由事先於載體箔的表面提供如上述的低Valley spacing及Rk,可於超薄銅箔的剝離層側之面及與剝離層相反側之面提供前述所期望的表面輪廓。也就是說,本發明的帶載體超薄銅箔為:準備具有谷間的平均距離(Valley Spacing)為2.5~20.0μm、且核心粗糙度深度(core roughness depth)Rk為2.0~3.8μm之表面的載體箔,在該載體箔的表面形成剝離層,及在該剝離層上形成超薄銅箔所製造而成。載體箔的剝離層側的面,十點平均粗糙度Rzjis較佳為2.0~5.0μm。此外,於載體箔的剝離層側的面,其谷間的平均距離(Valley spacing)較佳為4.5~10.0μm。於載體箔的表面實現上述範圍內的Valley spacing、Rk、及Rzjis為:將電解液(例如硫酸酸性硫酸 銅溶液)施以活性碳處理並去除電解液中的殘留添加液後,在經由活性碳處理後的電解液中重新添加膠或明膠等添加液,並進行習知條件下的電解,較佳為製造厚度約15~35μm左右的電解銅箔(例如可參照專利文獻3(JP H9-241882 A)所記載的製造方法)。藉由在這種所期望的表面輪廓所提供的載體箔析出面上間隔剝離層而形成超薄銅箔,在超薄銅箔的剝離層側的面上可提供上述的表面輪廓。 The surface on the release layer side of the carrier foil has a valley spacing of 2.5 to 20.0 μm, and a core roughness depth Rk of 2.0 to 3.8 μm. In the manufacturing process of ultra-thin copper foil with a carrier, in order to form an ultra-thin copper foil on the side of the release layer side of the carrier foil, by providing the above-mentioned low Valley spacing and Rk on the surface of the carrier foil in advance, it can be used in ultra-thin The surface on the release layer side of the copper foil and the surface on the opposite side to the release layer provide the aforementioned desired surface profile. That is, the ultra-thin copper foil with a carrier of the present invention is prepared with a surface having an average distance between valleys (Valley Spacing) of 2.5 to 20.0 μm and a core roughness depth (Rk of 2.0 to 3.8 μm). A carrier foil is produced by forming a release layer on the surface of the carrier foil and forming an ultra-thin copper foil on the release layer. The ten-point average roughness Rzjis of the surface on the release layer side of the carrier foil is preferably 2.0 to 5.0 μm. The surface of the carrier foil on the side of the release layer preferably has a valley spacing of 4.5 to 10.0 μm. The realization of Valley spacing, Rk, and Rzjis within the above range on the surface of the carrier foil is: the electrolyte (such as sulfuric acid acid sulfuric acid Copper solution) After applying activated carbon treatment to remove the residual additive solution in the electrolytic solution, the additive solution such as gelatin or gelatin is added to the electrolytic solution treated with activated carbon, and electrolysis under conventional conditions is preferably performed. An electrolytic copper foil having a thickness of about 15 to 35 μm is manufactured (for example, refer to the manufacturing method described in Patent Document 3 (JP H9-241882 A)). The ultra-thin copper foil is formed by separating the release layer on the carrier foil deposition surface provided with such a desired surface profile, and the above-mentioned surface profile can be provided on the side of the release layer side of the ultra-thin copper foil.

視其需要,也可以在剝離層和載體箔及/或超薄銅箔之間設置其他的機能層。做為這種其他的機能層可以例如是補助金屬層。補助金屬層較佳為由鎳及/或鈷所組成。藉由在載體箔的表面側及/或在超薄銅箔的表面側形成補助金屬層,可抑制在高溫或長時間的熱間壓印成形時載體箔與銅箔間容易引起的相互擴散,並可以確保載體箔的剝除強度安定性。補助金屬層的厚度較佳為0.001~3μm。 If necessary, another functional layer may be provided between the release layer and the carrier foil and / or ultra-thin copper foil. Examples of such other functional layers include auxiliary metal layers. The auxiliary metal layer is preferably composed of nickel and / or cobalt. By forming the auxiliary metal layer on the surface side of the carrier foil and / or on the surface side of the ultra-thin copper foil, it is possible to suppress the mutual diffusion easily caused between the carrier foil and the copper foil during high-temperature or long-time hot-space stamping, It can also ensure the stability of the peeling strength of the carrier foil. The thickness of the auxiliary metal layer is preferably 0.001 to 3 μm.

視其需要,也可以對超薄銅箔施以防銹處理。防銹處理較佳為利用含有鋅的鍍膜處理。利用鋅的鍍膜處理可以是鋅鍍膜處理及鋅合金鍍膜處理之任一種,鋅合金鍍膜處理特別是較佳為鋅-鎳合金處理。鋅-鎳合金處理可以至少是含有Ni及Zn的鍍膜處理,也可以含有Sn、Cr、Co等其他元素。於鋅-鎳合金鍍膜的Ni/Zn附著比較佳為質量比1.2~10,更佳為2~7,再更佳為2.7~4。此外,防銹處理較佳更含有鉻酸鹽處理,該鉻酸鹽處理為 使用鋅的鍍膜處理後,在含有鋅的鍍膜表面進行較佳。藉此可以更加提升防銹性。特別是較佳的防銹處理為:在進行鋅-鎳合金鍍膜處理後的鉻酸鹽處理之組合。 If necessary, anti-rust treatment can be applied to ultra-thin copper foil. The rust prevention treatment is preferably a coating treatment containing zinc. The coating treatment using zinc may be any of a zinc coating treatment and a zinc alloy coating treatment, and the zinc alloy coating treatment is particularly preferably a zinc-nickel alloy treatment. The zinc-nickel alloy treatment may be at least a plating treatment containing Ni and Zn, and may also contain other elements such as Sn, Cr, and Co. Ni / Zn adhesion to zinc-nickel alloy coatings is better when the mass ratio is 1.2 ~ 10, more preferably 2 ~ 7, and even more preferably 2.7 ~ 4. In addition, the rust prevention treatment preferably further includes a chromate treatment, which is After the zinc-plated coating treatment, it is preferable to perform the coating on the surface of the zinc-containing coating. This can further improve rust prevention. Particularly preferred rust prevention treatment is a combination of chromate treatment after zinc-nickel alloy plating treatment.

視其需要,也可以在超薄銅箔的表面施予矽烷偶合劑處理,形成矽烷偶合劑層。藉此可提升耐濕性、耐藥性、及與樹脂等的密著性。矽烷偶合劑層可以將矽烷偶合劑適度地稀釋並塗布後將其乾燥而形成。做為矽烷偶合劑可例如為:四-縮水甘油醚三甲、γ-環氧丙氧等的環氧官能性矽烷偶合劑、或是γ-氨丙基三甲氧基、N-β(氨基乙酯)γ-氨丙基三甲氧基、N-3-(4-(3-氨基丙氧基)丁氧基)丙基-3-氨基丙基三甲、N-苯基-γ-氨丙基三甲氧基等的氨基官能性矽烷偶合劑、或是γ-巰基丙基三甲氧矽烷等的巰基官能性矽烷偶合劑、或是乙烯基三甲氧基矽烷、乙烯基苯基三甲氧基矽烷等的烯烴官能性矽烷偶合劑、或是γ-甲基丙烯醯氧基矽烷等的丙烯酸官能性矽烷偶合劑、或是咪唑矽烷等的咪唑官能性矽烷偶合劑、或是三嗪矽烷等的三嗪官能性矽烷偶合劑等。 If necessary, a silane coupling agent treatment may be applied to the surface of the ultra-thin copper foil to form a silane coupling agent layer. This can improve moisture resistance, chemical resistance, and adhesion to resins and the like. The silane coupling agent layer can be formed by appropriately diluting the silane coupling agent, coating it, and drying it. Examples of the silane coupling agent include epoxy-functional silane coupling agents such as tetra-glycidyl ether trimethyl, γ-glycidoxy, γ-aminopropyltrimethoxy, and N-β (aminoethyl ester). ) γ-aminopropyltrimethoxy, N-3- (4- (3-aminopropoxy) butoxy) propyl-3-aminopropyltrimethyl, N-phenyl-γ-aminopropyltrimethyl Amino-functional silane coupling agents such as oxygen, thiol-functional silane coupling agents such as γ-mercaptopropyltrimethoxysilane, or olefins such as vinyltrimethoxysilane and vinylphenyltrimethoxysilane Functional silane coupling agent, acrylic functional silane coupling agent such as γ-methacryloxysilane, or imidazole functional silane coupling agent such as imidazole silane, or triazine functionality such as triazine silane Silane coupling agents, etc.

銅張積層板 Copper laminated board

本發明的帶載體超薄銅箔較佳為製作印刷配線板用的銅張積層板。也就是說,依據本發明較佳的態樣,提供一種利用帶載體超薄銅箔所得到的銅張層積板。藉由使用本發明的帶載體超薄銅箔,在銅張積層板的加工中,可以達到兼具雷射鑽孔加工性及微細電路形成性的效果。該銅張 積層板具備:本發明的帶載體超薄銅箔及與該表面處理層緊密設置的樹脂層。帶載體超薄銅箔可設置在樹脂層的一面或者是兩面。樹脂層為樹脂,較佳為含有絕緣性樹脂。樹脂層較佳為預浸物及/或樹脂片。預浸物為:合成樹脂板、玻璃板、玻璃織布、玻璃不織布、紙等基材浸於合成樹脂的複合材料之總稱。做為絕緣性樹脂較佳的例子為:環氧樹脂、氰酸酯樹脂、雙馬來醯亞胺三嗪樹脂(BT樹脂)、聚苯醚樹脂、酚醛樹脂等。此外,做為構成樹脂片的絕緣性樹脂的例子為:環氧樹脂、聚醯亞胺樹脂、聚酯樹脂等的絕緣樹脂。此外,從提升樹脂層的絕緣性等觀點來看,也可以含有由二氧化矽,氧化鋁等各種無機粒子所構成的填料粒子。雖不特別限定樹脂層的厚度,但較佳為1~1000μm,更佳為2~400μm,再更佳為3~200μm。樹脂層也可以由複數的層所構成。預浸物及/或樹脂片等的樹脂層也可以隔著預先在銅箔表面塗佈的底塗層樹脂層,設置於帶載體超薄銅箔。 It is preferable that the ultra-thin copper foil with a carrier of this invention is a copper laminated board for making printed wiring boards. That is, according to a preferred aspect of the present invention, a copper sheet laminated board obtained by using ultra-thin copper foil with a carrier is provided. By using the ultra-thin copper foil with a carrier of the present invention, it is possible to achieve both the effects of laser drillability and fine circuit formation in the processing of a copper laminate. The copper sheet The laminated board includes the ultra-thin copper foil with a carrier of the present invention, and a resin layer provided in close contact with the surface treatment layer. The ultra-thin copper foil with a carrier can be provided on one or both sides of the resin layer. The resin layer is a resin, and preferably contains an insulating resin. The resin layer is preferably a prepreg and / or a resin sheet. The prepreg is a general term for composite materials in which synthetic resin plates, glass plates, glass woven fabrics, glass non-woven fabrics, and paper are immersed in synthetic resin. Preferred examples of the insulating resin include epoxy resin, cyanate resin, bismaleimide triazine resin (BT resin), polyphenylene ether resin, and phenol resin. Examples of the insulating resin constituting the resin sheet include insulating resins such as epoxy resin, polyimide resin, and polyester resin. In addition, from the viewpoint of improving the insulation of the resin layer and the like, it may contain filler particles composed of various inorganic particles such as silicon dioxide and alumina. Although the thickness of the resin layer is not particularly limited, it is preferably 1 to 1000 μm, more preferably 2 to 400 μm, and even more preferably 3 to 200 μm. The resin layer may be composed of a plurality of layers. A resin layer such as a prepreg and / or a resin sheet may be provided on an ultra-thin copper foil with a carrier through an undercoat resin layer previously coated on the surface of the copper foil.

印刷配線板 Printed wiring board

本發明的帶載體超薄銅箔較佳為用於製作印刷配線板。也就是說,依據本發明較佳的態樣,提供一種利用帶載體超薄銅箔所得到的印刷配線板。藉由使用本發明的帶載體超薄銅箔,在印刷配線板的製造中,可以達到兼具雷射鑽孔加工性及微細電路形成性的效果。依據本態樣的印刷配線板為依序層積樹脂層及銅層的層狀結構。銅層為從 本發明的帶載體超薄銅箔的超薄銅箔而來的層。此外,樹脂層與上述的銅張積層板相關。不管如何,印刷配線板除了利用本發明的帶載體超薄銅箔以外,也可以採用習知的層狀構造。做為有關印刷配線板的具體例可以是:在預浸物的一面或兩面上黏接本發明的超薄銅箔並硬化之,做為層積體之後形成於電路的一面或兩面的印刷配線板、及將其多層化的多層印刷配線板等。此外,做為其他的具體例也可以是:在樹脂膜上形成本發明的超薄銅箔而形成電路的軟性印刷電路配線板、COF、TAB捲帶等。再來做為其他的具體例,在本發明的超薄銅箔上形成塗佈上述樹脂層的帶樹脂銅箔(RCC),將樹脂層做為絕緣黏接材層並層積於上述印刷基板後,將超薄銅箔做為配線層的全部或一部,利用改性半添加(MSAP)法、減法製程法等方法形成電路的積層配線板,及除去超薄銅箔後利用半添加法形成電路的積層配線板、在半導體積體電路上交換形成帶樹脂銅箔的積層及電路的在晶圓上直接積層等。做為更發展性的具體例為:將上述帶樹脂銅箔於基材上形成層積電路的天線元件、藉由黏接劑層在玻璃及樹脂膜上形成層積圖案的面板顯示用電子材料及玻璃窗用電子材料、在本發明的超薄銅箔上塗佈導電性黏接劑的電磁波防護膜等。特別是,本發明帶載體超薄銅箔適用減法製程法。例如:利用減法製程法形成電路的情形可採用圖1及圖2所示的構成。 The ultra-thin copper foil with a carrier of the present invention is preferably used for producing a printed wiring board. That is, according to a preferred aspect of the present invention, a printed wiring board obtained by using an ultra-thin copper foil with a carrier is provided. By using the ultra-thin copper foil with a carrier of the present invention, in the production of a printed wiring board, it is possible to achieve the effects of both laser drilling processability and fine circuit formation. The printed wiring board according to this aspect has a layered structure in which a resin layer and a copper layer are sequentially laminated. Copper layer is from The layer from the ultra-thin copper foil with the carrier ultra-thin copper foil of this invention. In addition, the resin layer is related to the above-mentioned copper laminate. In any case, in addition to using the ultra-thin copper foil with a carrier of the present invention, the printed wiring board may have a conventional layered structure. As a specific example of the printed wiring board, the ultra-thin copper foil of the present invention is adhered on one or both sides of the prepreg and cured, and the printed wiring is formed on one or both sides of the circuit after being laminated. Boards, multilayer printed wiring boards, and the like. In addition, as another specific example, a flexible printed circuit wiring board, a COF, a TAB tape, etc. may be formed by forming an ultra-thin copper foil of the present invention on a resin film to form a circuit. As another specific example, a resin-coated copper foil (RCC) coated with the resin layer is formed on the ultra-thin copper foil of the present invention, and the resin layer is used as an insulating adhesive material layer and laminated on the printed substrate. Then, the ultra-thin copper foil is used as all or a part of the wiring layer, and a laminated wiring board is formed by a method such as a modified semi-additive (MSAP) method and a subtractive process method, and a semi-additive method is used after removing the ultra-thin copper foil. Laminated wiring boards that form circuits, laminates with resin copper foil that are exchanged on semiconductor integrated circuits, and circuits that are directly laminated on a wafer, etc. As a more specific development example, an antenna element for forming a laminated circuit by forming the copper foil with resin on a substrate as described above, and an electronic material for panel display in which a laminated pattern is formed on glass and a resin film by an adhesive layer. And electronic materials for glass windows, electromagnetic wave protective films, etc., which are coated with a conductive adhesive on the ultra-thin copper foil of the present invention. In particular, the ultra-thin copper foil with a carrier of the present invention is applicable to a subtractive process method. For example, when a circuit is formed by a subtractive process method, the configuration shown in FIG. 1 and FIG. 2 may be adopted.

[實施例] [Example]

以下,利用實施例來更進一步說明本發明。 Hereinafter, the present invention will be further described using examples.

例1 example 1

在載體箔的析出面側依序形成剝離層及超薄銅箔層後,進行防銹處理及矽烷偶合劑處理以製作帶載體超薄銅箔。因此,對於所得到的帶載體超薄銅箔進行各種評價。具體如以下的順序所示。 After the release layer and the ultra-thin copper foil layer are sequentially formed on the precipitation surface side of the carrier foil, a rust prevention treatment and a silane coupling agent treatment are performed to produce an ultra-thin copper foil with a carrier. Therefore, various evaluations were performed about the obtained ultra-thin copper foil with a carrier. The details are shown in the following order.

(1)載體箔的製作 (1) Preparation of carrier foil

陰極利用算術平均數粗糙度Ra(JIS B 0601:2001為準據)為0.20μm的鈦製回轉電極,陽極利用DSA(尺寸安定性陽極)做為銅電解液利用以下所示組成之硫酸酸性硫酸銅溶液經活性碳處理後,在活性碳處理後的電解液中,添加水溶性明膠使其濃度為5mg/L,以溶液溫度50℃,電流密度60A/dm2電解,得到厚度18μm的電解銅箔做為載體箔。 The cathode uses a titanium rotary electrode with an arithmetic mean roughness Ra (JIS B 0601: 2001) based on 0.20 μm. The anode uses DSA (Dimensional Stability Anode) as a copper electrolyte. The sulfuric acid and sulfuric acid with the following composition are used. After the copper solution was treated with activated carbon, water-soluble gelatin was added to the electrolytic solution after the activated carbon treatment to a concentration of 5 mg / L, and the electrolyte was electrolyzed at a solution temperature of 50 ° C and a current density of 60 A / dm 2 to obtain an electrolytic copper having a thickness of 18 μm The foil was used as the carrier foil.

<硫酸酸性硫酸銅溶液的組成> <Composition of acidic copper sulfate solution>

銅濃度:85g/L Copper concentration: 85g / L

硫酸濃度:270g/L Sulfuric acid concentration: 270g / L

氯濃度:30mg/L Chlorine concentration: 30mg / L

(2)剝離層的形成 (2) Formation of peeling layer

將酸洗處理過的載體箔的析出面於CBTA(羧基苯並三唑)濃度1g/L、硫酸濃度150g/L、及銅濃度10g/L的CBTA水溶液中,以液溫30℃,做30秒的浸漬,使CBTA的成份吸著於載體箔的析出面。藉此,在載體箔的析出面將CBTA層做為有機剝離層形成。 The precipitated surface of the pickled carrier foil was placed in a CBTA (carboxybenzobenzotriazole) concentration of 1 g / L, a sulfuric acid concentration of 150 g / L, and a copper concentration of 10 g / L in an aqueous solution of CBTA. The immersion in seconds caused the components of CBTA to be adsorbed on the precipitation surface of the carrier foil. Thereby, the CBTA layer is formed as an organic peeling layer on the deposition surface of the carrier foil.

(3)補助金屬層的形成 (3) Subsidized metal layer formation

形成有機剝離層的載體箔浸漬於利用硫酸鎳所製作的含有鎳濃度20g/L的溶液中,以液溫45℃、pH3、電流密度5A/dm2的條件,使相當於厚度0.001μm附著量的鎳附著於有機剝離層上。藉此,在有機剝離層上將鎳層做為補助金屬層形成。 The carrier foil forming the organic release layer was immersed in a solution containing nickel concentration of 20 g / L made of nickel sulfate, and the adhesion amount was equivalent to a thickness of 0.001 μm under the conditions of a liquid temperature of 45 ° C., a pH of 3, and a current density of 5 A / dm 2 Of nickel adheres to the organic release layer. Thereby, a nickel layer is formed as an auxiliary metal layer on the organic release layer.

(4)超薄銅箔的形成 (4) Formation of ultra-thin copper foil

將形成補助金屬層的載體箔,浸漬於以下所示的組成之銅溶液中,以溶液溫度50℃、電流密度5~30A/dm2電解,形成厚度3μm的超薄銅箔於補助金屬層上。 The carrier foil forming the auxiliary metal layer was immersed in a copper solution having the composition shown below, and was electrolyzed at a solution temperature of 50 ° C and a current density of 5 to 30 A / dm 2 to form an ultra-thin copper foil with a thickness of 3 μm on the auxiliary metal layer. .

<溶液的組成> <Composition of solution>

銅濃度:60g/L Copper concentration: 60g / L

硫酸濃度:200g/L Sulfuric acid concentration: 200g / L

(5)粗糙化處理 (5) Roughening

在藉此形成的超薄銅箔的表面進行粗糙化處理。該粗 糙化處理藉由於超薄銅箔上使微細銅粒析出附著的燒附鍍膜工程、及防止該微細銅粒脫落的覆蓋鍍膜工程所構成。燒附鍍膜工程利用含有銅濃度10g/L及硫酸濃度120g/L的酸性硫酸銅溶液,以液溫25℃、電流密度15A/dm2進行粗糙化處理。之後的覆蓋鍍膜工程利用含有銅濃度70g/L及硫酸濃度120g/L的酸性硫酸銅溶液,以液溫40℃、電流密度15A/dm2的平滑鍍膜條件進行電沉積。 The surface of the ultra-thin copper foil thus formed is roughened. This roughening treatment is composed of a firing coating process for depositing and depositing fine copper particles on an ultra-thin copper foil, and a covering coating process for preventing the fine copper particles from falling off. The firing coating process uses an acidic copper sulfate solution containing a copper concentration of 10 g / L and a sulfuric acid concentration of 120 g / L to perform a roughening treatment at a liquid temperature of 25 ° C and a current density of 15 A / dm 2 . The subsequent coating process uses an acidic copper sulfate solution containing a copper concentration of 70 g / L and a sulfuric acid concentration of 120 g / L to perform electrodeposition under smooth coating conditions at a liquid temperature of 40 ° C and a current density of 15 A / dm 2 .

(6)防銹處理 (6) Anti-rust treatment

在所得到的帶載體超薄銅箔的粗糙化處理層之表面,進行由鋅-鎳合金鍍膜處理及鉻酸鹽處理所構成的防銹處理。首先,利用鋅濃度0.2g/L、鎳濃度2g/L、及吡咯啉酸鉀濃度300g/L的電解液,以液溫40℃、電流密度0.5A/dm2的條件,在粗糙化處理層及載體箔的表面進行鋅-鎳合金鍍膜處理。接著,利用鉻酸濃度3g/L的水溶液,以pH10、電流密度0.5A/dm2的條件,在進行鋅-鎳合金鍍膜處理的表面進行鉻酸鹽處理。 The surface of the roughened layer of the obtained ultra-thin copper foil with a carrier was subjected to a rust prevention treatment consisting of a zinc-nickel alloy plating treatment and a chromate treatment. First, an electrolytic solution having a zinc concentration of 0.2 g / L, a nickel concentration of 2 g / L, and a potassium pyrrolinate concentration of 300 g / L was used at a liquid temperature of 40 ° C and a current density of 0.5 A / dm 2 to roughen the layer. And the surface of the carrier foil is treated with zinc-nickel alloy plating. Next, the surface of the zinc-nickel alloy plating treatment was subjected to a chromate treatment using an aqueous solution having a chromic acid concentration of 3 g / L under conditions of pH 10 and a current density of 0.5 A / dm 2 .

(7)矽烷偶合劑處理 (7) Silane coupling agent treatment

使γ-環氧丙氧濃度2g/L的水溶液吸著於帶載體超薄銅箔的超薄銅箔側的表面,藉由利用電熱器將水分蒸發,進行矽烷偶合劑處理。此時,不在載體箔側進行矽烷偶合劑處理。 An aqueous solution having a γ-glycidyl oxide concentration of 2 g / L was adsorbed on the surface of the ultra-thin copper foil side of the ultra-thin copper foil with a carrier, and the water was evaporated by an electric heater to perform a silane coupling agent treatment. At this time, the silane coupling agent treatment is not performed on the carrier foil side.

(8)評價 (8) Evaluation

對於所得到的帶載體超薄銅箔進行以下所述的各種評價。 The obtained ultra-thin copper foil with a carrier was subjected to various evaluations described below.

<表面性狀參數> <Surface properties parameter>

使用zygo New View 5032(Zygo社製)做為測定機器,利用Metro Pro Ver 8.0.2做為解析軟體,將低頻濾光片以11μm的條件採用,對載體箔與超薄銅箔的表面峰值間的平均距離(Peak spacing)、谷間的平均距離(Valley spacing)、十點平均粗糙度Rzjis、核心粗糙度深度Rk、及/或起伏的最大高低差Wmax進行測定。此時,將超薄銅箔或載體箔與樣本台緊密地固定,在樣本片的1cm角的範圍內,以108μm×144μm的視野選擇6點做測定,將從該6點的測定點所得到的測定值的平均值,採用為代表值。而且,有關超薄銅箔的剝離層側之面,在製作後述的雷射鑽孔加工性評價用銅張積層板後進行測定。 Zygo New View 5032 (manufactured by Zygo) was used as the measurement device, and Metro Pro Ver 8.0.2 was used as the analysis software. The low-frequency filter was used under the condition of 11 μm. The average distance (Peak spacing), the average distance between valleys (Valley spacing), the ten-point average roughness Rzjis, the core roughness depth Rk, and / or the maximum height difference Wmax of the fluctuations were measured. At this time, the ultra-thin copper foil or carrier foil is tightly fixed to the sample stage, and within a 1 cm angle of the sample piece, 6 points are selected for measurement with a field of view of 108 μm × 144 μm, and the measurement points obtained from the 6 points The average value of the measured values is taken as the representative value. In addition, the surface of the release layer side of the ultra-thin copper foil was measured after producing a copper laminate sheet for laser drilling processability evaluation described later.

<雷射鑽孔加工性> <Laser Drilling Processability>

利用帶載體超薄銅箔製作銅張積層板,評價雷射鑽孔加工性。首先,在內層基板的表面,隔著預浸物(三菱瓦斯化學株式會社製,830NX-A,厚0.2mm)層積帶載體超薄銅箔的超薄銅箔,以4.0MPa、220℃、90分鐘的條件做熱壓後,剝離載體箔,製作銅張積層板。之後,對上述銅張積層板使用二氧化碳雷射,以脈衝寬為12μsec.、脈衝 能量為8mJ、雷射光徑97μm的條件進行雷射鑽孔加工。對由雷射鑽孔加工所形成的10個孔測定x方向及y方向的直徑,算出該些直徑的平均值後做為加工後的孔徑。將加工後的孔徑為70μm以上判定為A,65μm以上未滿70μm則判定為B,未滿65μm則判定為C。 A copper laminated laminate was produced by using an ultra-thin copper foil with a carrier, and the laser drilling processability was evaluated. First, an ultra-thin copper foil with a carrier ultra-thin copper foil was laminated on the surface of the inner substrate via a prepreg (830 N-A, manufactured by Mitsubishi Gas Chemical Co., Ltd., 0.2 mm thick) at 4.0 MPa and 220 ° C After hot pressing at 90 minutes, the carrier foil was peeled off to produce a copper laminate. After that, a carbon dioxide laser was applied to the copper laminated laminate with a pulse width of 12 μsec. Laser drilling was performed under conditions of an energy of 8 mJ and a laser beam diameter of 97 μm. The diameters in the x direction and the y direction of the ten holes formed by laser drilling were measured, and the average of these diameters was calculated as the processed hole diameter. The pore diameter after processing was determined to be A or more, A to 65 μm or less and 70 μm or less to be B, and C or less to 65 μm.

<電路形成性> <Circuitability>

電路形成性的評價由接下來的方式進行。首先,在上述銅張積層板的表面的電路高度成為15μm前持續進行電鍍。在此方式形成的電鍍層的表面貼付乾薄膜,進行曝光及顯像,而形成蝕刻光阻。藉由氯化銅蝕刻液的處理,將光阻間的銅溶解除去,形成電路高15μm、線/空間=25μm/25μm的配線圖案。在電路的上方以SEM觀察,從電路的頂部算起以摺邊的長度4μm為間隔測定50個點的值,將該等平均值算出做為摺邊長。將摺邊長未滿4.5μm判定為A,4.5μm以上未滿5.0μm則判定為B,5.0μm以上則判定為C。 The evaluation of the circuit formability was performed in the following manner. First, electroplating was continued until the circuit height of the surface of the said copper laminated board became 15 micrometers. A dry film is attached to the surface of the plated layer formed in this manner, and exposure and development are performed to form an etching photoresist. Through the treatment of the copper chloride etching solution, copper between the photoresists is dissolved and removed, and a wiring pattern having a circuit height of 15 μm and a line / space = 25 μm / 25 μm is formed. Observe the upper part of the circuit by SEM, measure the value of 50 points from the top of the circuit with the length of the hemming at 4 μm, and calculate the average value as the hemming length. A hemming length of less than 4.5 μm was determined as A, a length of 4.5 μm or more and less than 5.0 μm was determined as B, and a length of 5.0 μm or more was determined as C.

例2 Example 2

除了用以下的順序形成超薄銅箔以外,和例1相同,進行帶載體超薄銅箔的製作及評價。 The production and evaluation of the ultra-thin copper foil with a carrier were performed in the same manner as in Example 1 except that the ultra-thin copper foil was formed in the following procedure.

(超薄銅箔的形成) (Formation of ultra-thin copper foil)

將形成補助金屬層的載體箔,浸漬於以下所示組成之 鍍亮液中,以溶液溫度45~50℃、電流密度33A/dm2電解,形成厚度3μm的超薄銅箔於補助金屬層上。 The carrier foil forming the auxiliary metal layer was immersed in a brightening solution of the composition shown below, and was electrolyzed at a solution temperature of 45 to 50 ° C and a current density of 33 A / dm 2 to form an ultra-thin copper foil with a thickness of 3 μm on the auxiliary metal layer. .

<鍍亮液的組成> <Composition of plating solution>

銅濃度:65g/L Copper concentration: 65g / L

硫酸濃度:200g/L Sulfuric acid concentration: 200g / L

二烯丙基二甲基氯化銨濃度:40mg/L Diallyl dimethyl ammonium chloride concentration: 40mg / L

雙(3-磺丙基)二硫化物濃度:30mg/L Bis (3-sulfopropyl) disulfide concentration: 30mg / L

氯濃度:30mg/L Chlorine concentration: 30mg / L

例3 Example 3

除了製作厚度35μm的載體箔以外,和例2相同,進行帶載體超薄銅箔的製作及評價。 The production and evaluation of an ultra-thin copper foil with a carrier were performed in the same manner as in Example 2 except that a carrier foil having a thickness of 35 μm was produced.

例4(比較) Example 4 (comparative)

除了用以下的順序形成載體箔以外,和例1相同,進行帶載體超薄銅箔的製作及評價。 Except that a carrier foil was formed in the following procedure, production and evaluation of an ultra-thin copper foil with a carrier were performed in the same manner as in Example 1.

(載體箔的製作) (Production of carrier foil)

做為銅電解液利用以下所示組成之硫酸酸性硫酸銅溶液,陰極使用表面粗糙度Ra為0.20μm的鈦製回轉電極,陽極使用DSA(尺寸安定性陽極),以溶液溫度50℃,電流密度60A/dm2電解,得到厚度35μm的電解銅箔做為載體箔。 As a copper electrolyte, a sulfuric acidic copper sulfate solution with the composition shown below was used. The cathode used a titanium rotary electrode with a surface roughness Ra of 0.20 μm. The anode used DSA (Dimensional Stability Anode). The solution temperature was 50 ° C and the current density was 50. 60A / dm 2 was electrolyzed to obtain an electrolytic copper foil having a thickness of 35 μm as a carrier foil.

<硫酸酸性硫酸銅溶液的組成> <Composition of acidic copper sulfate solution>

銅濃度:80g/L Copper concentration: 80g / L

硫酸濃度:250g/L Sulfuric acid concentration: 250g / L

明膠濃度:2mg/L Gelatin concentration: 2mg / L

氯濃度:1.5mg/L Chlorine concentration: 1.5mg / L

例5(比較) Example 5 (comparative)

除了製作厚度35μm的載體箔以外,和例1相同,進行帶載體超薄銅箔的製作及評價。 Except that a carrier foil having a thickness of 35 μm was produced, as in Example 1, an ultra-thin copper foil with a carrier was produced and evaluated.

結果 result

由例1~5所得到的評價結果顯示於表1中。 The evaluation results obtained in Examples 1 to 5 are shown in Table 1.

Claims (11)

一種依序具備有:載體箔、剝離層、及超薄銅箔的帶載體超薄銅箔,其中:於前述超薄銅箔的剝離層側的面,其表面峰值間的平均距離(Peak Spacing)為2.5~20.0μm,且其核心粗糙度深度(core roughness depth)Rk為1.5~3.0μm;於與前述超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為4.0μm以下。 An ultra-thin copper foil with a carrier comprising a carrier foil, a release layer, and an ultra-thin copper foil in sequence, wherein the average distance between the peaks of the surfaces of the surface on the release-layer side of the ultra-thin copper foil (Peak Spacing) ) Is 2.5 to 20.0 μm, and its core roughness depth Rk is 1.5 to 3.0 μm; on the side opposite to the release layer side of the ultra-thin copper foil, the maximum height difference Wmax is 4.0 μm the following. 如請求項1所記載之帶載體超薄銅箔,其中,於前述超薄銅箔的剝離層側的面,其十點平均粗糙度Rzjis為2.0~4.0μm。 The ultra-thin copper foil with a carrier according to claim 1, wherein the ten-point average roughness Rzjis of the surface on the release layer side of the ultra-thin copper foil is 2.0 to 4.0 μm. 如請求項1所記載之帶載體超薄銅箔,其中,於前述超薄銅箔的剝離層側的面,其表面峰值間的平均距離(Peak Spacing)為6.5~15.0μm,且其核心粗糙度深度(core roughness depth)Rk為2.0~3.0μm。 The ultra-thin copper foil with a carrier according to claim 1, wherein the surface on the release layer side of the ultra-thin copper foil has an average distance between peaks on the surface (Peak Spacing) of 6.5 to 15.0 μm, and its core is rough The core roughness depth Rk is 2.0 to 3.0 μm. 如請求項1所記載之帶載體超薄銅箔,其中,於與前述超薄銅箔的剝離層側相反之面,其起伏的最大高低差Wmax為3.0μm以下。 The ultra-thin copper foil with a carrier according to claim 1, wherein the maximum height difference Wmax of the undulation on the side opposite to the release layer side of the ultra-thin copper foil is 3.0 μm or less. 如請求項1所記載之帶載體超薄銅箔,其中,於前述與超薄銅箔的剝離層側相反之面為粗化面。 The ultra-thin copper foil with a carrier according to claim 1, wherein the surface opposite to the release layer side of the ultra-thin copper foil is a roughened surface. 如請求項1所記載之帶載體超薄銅箔,其中,前述超薄銅箔具有0.5~5.0μm的厚度。 The ultra-thin copper foil with a carrier according to claim 1, wherein the ultra-thin copper foil has a thickness of 0.5 to 5.0 μm. 一種製造如請求項1至6中任一項所記載之帶載體超薄銅箔的製造方法,包含: 準備具有:谷間的平均距離(Valley Spacing)為2.5~20.0μm,且核心粗糙度深度(core roughness depth)Rk為2.0~3.8μm之表面的載體箔之步驟;在前述載體箔的前述表面形成剝離層之步驟;在前述剝離層上形成超薄銅箔之步驟。 A manufacturing method for manufacturing the ultra-thin copper foil with a carrier according to any one of claims 1 to 6, comprising: A step of preparing a carrier foil having a surface having an average distance between valleys (Valley Spacing) of 2.5 to 20.0 μm and a core roughness depth Rk of 2.0 to 3.8 μm; forming a peel on the aforementioned surface of the aforementioned carrier foil A step of forming a layer; a step of forming an ultra-thin copper foil on the aforementioned release layer. 如請求項7所記載之製造方法,其中,前述載體箔的表面之十點平均粗糙度Rzjis為2.0~5.0μm。 The manufacturing method according to claim 7, wherein the ten-point average roughness Rzjis of the surface of the carrier foil is 2.0 to 5.0 μm. 如請求項7所記載之製造方法,其中,前述載體箔的表面之前述谷間之平均距離(Valley Spacing)為4.5~10.0μm。 The manufacturing method according to claim 7, wherein the average distance (Valley Spacing) between the valleys on the surface of the carrier foil is 4.5 to 10.0 μm. 一種具備如請求項1至6中任一項所記載之帶載體超薄銅箔的銅張層積板。 The copper sheet laminated board provided with the ultra-thin copper foil with a carrier as described in any one of Claims 1-6. 一種印刷配線板之製造方法,其特徵為:利用如請求項1至6中任一項所記載之帶載體超薄銅箔,製造印刷配線板。 A method for manufacturing a printed wiring board, comprising: manufacturing a printed wiring board by using the ultra-thin copper foil with a carrier according to any one of claims 1 to 6.
TW105107041A 2015-03-24 2016-03-08 Ultra-thin copper foil with carrier, manufacturing method thereof, copper laminated board and printed wiring board TWI617436B (en)

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