TW202143515A - 壓電元件及壓電揚聲器 - Google Patents

壓電元件及壓電揚聲器 Download PDF

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Publication number
TW202143515A
TW202143515A TW110114630A TW110114630A TW202143515A TW 202143515 A TW202143515 A TW 202143515A TW 110114630 A TW110114630 A TW 110114630A TW 110114630 A TW110114630 A TW 110114630A TW 202143515 A TW202143515 A TW 202143515A
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TW
Taiwan
Prior art keywords
piezoelectric
piezoelectric element
layer
film
electrode
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Application number
TW110114630A
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English (en)
Chinese (zh)
Inventor
小原直浩
小沢栄貴
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日商富士軟片股份有限公司
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Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW202143515A publication Critical patent/TW202143515A/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/005—Piezoelectric transducers; Electrostrictive transducers using a piezoelectric polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/202—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using longitudinal or thickness displacement combined with bending, shear or torsion displacement
    • H10N30/2023—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using longitudinal or thickness displacement combined with bending, shear or torsion displacement having polygonal or rectangular shape
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/501—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/503—Piezoelectric or electrostrictive devices having a stacked or multilayer structure having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H10N30/508—Piezoelectric or electrostrictive devices having a stacked or multilayer structure adapted for alleviating internal stress, e.g. cracking control layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/871—Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/045—Plane diaphragms using the distributed mode principle, i.e. whereby the acoustic radiation is emanated from uniformly distributed free bending wave vibration induced in a stiff panel and not from pistonic motion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
TW110114630A 2020-05-07 2021-04-23 壓電元件及壓電揚聲器 TW202143515A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-082135 2020-05-07
JP2020082135 2020-05-07
JP2021-067879 2021-04-13
JP2021067879 2021-04-13

Publications (1)

Publication Number Publication Date
TW202143515A true TW202143515A (zh) 2021-11-16

Family

ID=78467954

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110114630A TW202143515A (zh) 2020-05-07 2021-04-23 壓電元件及壓電揚聲器

Country Status (7)

Country Link
US (1) US20230096425A1 (https=)
EP (1) EP4149118A4 (https=)
JP (1) JP7449373B2 (https=)
KR (1) KR20220164538A (https=)
CN (1) CN115486095A (https=)
TW (1) TW202143515A (https=)
WO (1) WO2021225071A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7073646B2 (ja) * 2017-07-26 2022-05-24 ヤマハ株式会社 トランスデューサ
KR102799989B1 (ko) * 2020-11-27 2025-04-23 엘지디스플레이 주식회사 진동 장치와, 이를 포함하는 장치 및 차량
JPWO2023042542A1 (https=) * 2021-09-16 2023-03-23
WO2023053750A1 (ja) * 2021-09-28 2023-04-06 富士フイルム株式会社 圧電素子および電気音響変換器
WO2023188929A1 (ja) * 2022-03-30 2023-10-05 富士フイルム株式会社 圧電フィルム、圧電素子、および、電気音響変換器
WO2023188966A1 (ja) * 2022-03-30 2023-10-05 富士フイルム株式会社 圧電フィルム、圧電素子、および、電気音響変換器
WO2024009774A1 (ja) * 2022-07-08 2024-01-11 富士フイルム株式会社 画像表示装置
CN116201835B (zh) * 2022-12-15 2026-02-10 中国航空工业集团公司西安航空计算技术研究所 一种航空电子设备减振结构
CN120604526A (zh) * 2023-02-28 2025-09-05 富士胶片株式会社 层叠压电元件及电声换能器
KR20250160194A (ko) * 2023-03-28 2025-11-11 엔지케이 인슐레이터 엘티디 접합체의 제조 방법
CN116477849B (zh) * 2023-04-10 2024-04-26 之江实验室 一种铁酸铋纳米柱阵列及其制备方法
CN116636873A (zh) * 2023-04-21 2023-08-25 清华大学 一种全纤维的柔性心音传感器及其制备方法
CN117606651B (zh) * 2023-11-23 2024-05-24 哈尔滨工业大学 一种触觉传感器及接触位点的识别方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054486A (ja) * 1983-09-05 1985-03-28 Toshiba Corp 高分子素子のリ−ド線接続部
JPS6181000A (ja) * 1984-09-28 1986-04-24 Toshiba Corp 積層高分子圧電型超音波探触子
JPH07199813A (ja) 1993-12-28 1995-08-04 Dainippon Printing Co Ltd 改ざん防止シール及び改ざん防止通帳
JP2004343453A (ja) 2003-05-15 2004-12-02 Sony Corp 車両用オーディオ装置
JP4583092B2 (ja) 2004-07-06 2010-11-17 参天製薬株式会社 改ざん防止シール
CN102044625B (zh) * 2009-10-10 2013-07-10 精量电子（深圳）有限公司 一种压电薄膜超声波传感器的电极
KR101628584B1 (ko) 2011-09-30 2016-06-08 후지필름 가부시키가이샤 전기 음향 변환 필름, 플렉시블 디스플레이, 성대 마이크로폰 및 악기용 센서
JP6005089B2 (ja) * 2013-03-29 2016-10-12 富士フイルム株式会社 電気音響変換フィルム
JP6201583B2 (ja) * 2013-09-30 2017-09-27 株式会社村田製作所 圧電デバイスおよび圧電デバイスの製造方法
JP6199245B2 (ja) 2014-06-30 2017-09-20 富士フイルム株式会社 電気音響変換フィルムおよび電気音響変換フィルムの導通方法
WO2018020887A1 (ja) 2016-07-27 2018-02-01 富士フイルム株式会社 ピックアップセンサおよび生体センサ
EP3879590A4 (en) * 2018-11-08 2021-12-29 FUJIFILM Corporation Laminated piezoelectric element and electro-acoustic transducer
JPWO2021199800A1 (https=) * 2020-03-30 2021-10-07

Also Published As

Publication number Publication date
JP7449373B2 (ja) 2024-03-13
EP4149118A4 (en) 2023-10-18
EP4149118A1 (en) 2023-03-15
US20230096425A1 (en) 2023-03-30
CN115486095A (zh) 2022-12-16
JPWO2021225071A1 (https=) 2021-11-11
WO2021225071A1 (ja) 2021-11-11
KR20220164538A (ko) 2022-12-13

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