TW202139824A - 組件傳遞之方法及裝置 - Google Patents

組件傳遞之方法及裝置 Download PDF

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Publication number
TW202139824A
TW202139824A TW110104136A TW110104136A TW202139824A TW 202139824 A TW202139824 A TW 202139824A TW 110104136 A TW110104136 A TW 110104136A TW 110104136 A TW110104136 A TW 110104136A TW 202139824 A TW202139824 A TW 202139824A
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substrate
components
transfer
sender
component
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TW110104136A
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English (en)
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喬根 伯格拉夫
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奧地利商Ev集團E塔那有限公司
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Publication of TW202139824A publication Critical patent/TW202139824A/zh

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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G47/00—Article or material-handling devices associated with conveyors; Methods employing such devices
    • B65G47/52—Devices for transferring articles or materials between conveyors i.e. discharging or feeding devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

一種用於藉由至少以下步驟、特別是藉由以下順序將組件自一發送方基板傳遞至一接收方基板之方法： i)      在該發送方基板上設置及/或製造該等組件， ii)     將該發送方基板之該等組件傳遞至傳遞基板， iii)    將該等組件自該傳遞基板傳遞至該接收方基板， 其中可憑藉結合構件及/或去結合構件選擇性地傳遞該等組件。

Description

組件傳遞之方法及裝置
本發明係關於一種用於將組件、特別是電子組件自一發送方基板傳遞至一接收方基板之方法。
先前技術展示用於將一產品基板自一個載體基板傳遞至另一載體基板之最多樣化方法。例如在公開案WO2011120537A1中詳細地提及此等載體交換程序。近年來，個別功能組件越來越多地彼此上下或彼此並排堆疊。在此至關重要的是，僅傳遞已通過一先前測試、特別是電測試之組件。因此，此消除有缺陷組件被傳遞之可能性。
因此，本發明之問題係指出一種至少部分地消除、特別是完全消除先前技術中所述之缺點之方法及裝置。特定而言，本發明之一問題係指出一種用於將組件自一發送方基板傳遞至一接收方基板之改良式方法及裝置。本發明之一進一步問題係指出一種用於製造一發光二極體之改良式方法及裝置，個別組件利用該方法及裝置而自一發送方基板傳遞至一接收方基板。本發明之一進一步問題係指出一種用於組件傳遞之方法及裝置。
當前問題藉由協同技術方案之特徵來解決。從屬技術方案中指出本發明之有利發展。說明書、發明申請專利範圍及/或圖式中所指出之至少兩個特徵之所有組合亦落入本發明之範疇內。在所述值範圍內，位於所述限度內之值亦應被視為揭示為極限值且可以任何組合來主張。在後文中，一組件應被理解為意謂一待傳遞之物件。一組件不一定必須具有此一功能性。
據此，本發明係關於一種用於藉由至少以下步驟、特別是藉由以下順序將組件、特別是電子組件自一發送方基板傳遞至一接收方基板之方法： i)      在該發送方基板上設置及/或製造該等組件， ii)     將該發送方基板之該等組件傳遞至一傳遞基板， iii)    將該等組件自該傳遞基板傳遞至該接收方基板， 其中可憑藉結合構件及/或去結合構件選擇性地傳遞該等組件。
在該傳遞期間，可將該等組件放置或固定於該發送方基板上。亦可設想，將該等組件製造於該發送方基板上，且在其等製造之後配置於該發送方基板上。該等組件、特別是電子組件是半導體工業中使用之尤其非常小的組件。
步驟ii)中之傳遞可特別是被理解為由該傳遞基板接收該等組件。步驟iii)中之傳遞可特別是被理解為該等組件至該接收方基板之一傳遞。在步驟ii)中之傳遞中，可由該傳遞基板接觸配置於該發送方基板上之組件。
若將該等組件固定於該發送方基板上，則可在特別是選擇性地針對各個別組件傳遞至該傳遞基板期間移除此固定。該等組件亦可固定於該傳遞基板上以用於特別是選擇性地針對各個別組件進行傳遞。
在將該等組件傳遞至該接收方基板期間，該等組件或該傳遞基板可再次接觸該接收方基板及/或配置於該接收方基板上之進一步組件。配置於該接收方基板上之進一步組件特別是已在一先前執行之程序中自該發送方基板及/或進一步發送方基板傳遞至該接收方基板之組件。
可移除、特別是選擇性地移除該傳遞基板上之一固定。在該傳遞期間，特別是藉由一結合構件、特別是憑藉一雷射在該接收方基板上及/或在配置於該接收方基板上之進一步組件上結合該等組件。
特定而言，在個別程序步驟之間特別是藉助於該等基板上之對準標記進行該等基板彼此之一對準或特別是該等組件與該等組件之對應位置之一對準。在該方法中至關重要的是，在該發送方基板與該接收方基板之間進行該等組件之一選擇性傳遞。以此方式，僅可有利地傳遞特定或選定組件。特定而言，無法傳遞有缺陷組件或僅傳遞具有特定性質之組件。亦可選擇所有組件，其中然而在各自傳遞中藉由結合構件及/或去結合構件提供選擇可能性。此外，在兩個步驟中憑藉該傳遞基板可有利地進行待傳遞之組件之一選擇。
此外，本發明係關於一種使用傳遞組件之方法傳遞該等組件之裝置，其中可在該發送方基板上製造及/或設置組件，且其中可將該發送方基板之該等組件傳遞至一傳遞基板，且其中可將該等組件自該傳遞基板傳遞至該接收方基板，且其中可藉由結合及/或去結合構件選擇性地實行該等組件至該傳遞基板及/或該接收方基板之該傳遞。
此外，本發明係關於一種使用用於傳遞組件之方法製造之發光二極體(LED)。
在本發明之一實施例中提供，在步驟ii)及/或步驟iii)中之該傳遞期間，藉由該結合構件、特別是藉由雷射輻射固定、局部地限制個別組件或複數個組件。在該方法中至關重要的是，在該傳遞期間，可在各情況下個別地固定該等組件或可移除該固定，使得因此可進行該等組件之一選擇性傳遞。亦可設想，該結合構件在兩個或更多個組件上之一局部限制作用。然而，可個別地在該傳遞基板或該接收方基板上固定、特別是結合各組件。因此，有利地使該傳遞期間之一一選擇成為可能。
在本發明之另一有利實施例中提供，在步驟ii)及/或步驟iii)中之該傳遞期間，藉由該去結合構件釋放、局部地限制個別組件或複數個組件。至關重要的是，在該等組件之傳遞期間，可藉由去結合構件個別地釋放該等組件，使得僅釋放或傳遞選定組件。因此，可藉由一釋放之省略再次自該傳遞排除有缺陷組件。亦可設想，兩個或更多個組件之一局部限制釋放。因此，有利地使該傳遞期間之一選擇成為可能。
此外，較佳地提供藉由該結合構件或該去結合構件之個別組件或複數個局部相鄰組件之固定及個別組件或複數個局部相鄰組件之固定移除同時發生及/或在時間及空間上偏移。接著，首先將待接收之組件固定至例如該傳遞基板且接著移除至該發送方基板之固定，使得該等組件在該傳遞期間無法滑移。在將該等組件自該傳遞基板至該接收方基板之傳遞期間亦係如此。
在本發明之另一有利實施例中提供，出於選擇目的，藉由一測試、特別是電測試對該等組件進行至少一次功能性測試。特定而言，因此可判定無缺陷之功能組件。功能組件可執行其等所欲之功能。藉由判定該等功能組件，可將該等功能組件選擇性地自該發送方基板傳遞至該接收方基板。然而，亦可設想，組件係有功能的，但仍不被傳遞，因為例如其等在該接收方基板之對應位置處執行除製造程序中所要之功能以外之一功能。亦可設想，具有所要功能之一對應組件、特別是功能組件已存在於該接收方基板上之對應位置處。
電測試原則上可在該傳遞之前、期間或之後進行。在其中已在該發送方基板上製造該等組件之情況下，一測試較佳地在傳遞至該傳遞基板之前進行，使得不將有缺陷組件傳遞至該傳遞基板。亦可設想在傳遞至該傳遞基板上之後的一第二測試。特定而言，亦可檢查該等組件是否配置於所欲位置處。
若該等組件已滑移或在一錯誤位置中，則亦可在此情況下防止一傳遞，且因此可進行一選擇。
在本發明之另一有利實施例中提供，在步驟ii)中之該傳遞期間，該傳遞基板接觸及/或將壓力施加至設置於該發送方基板上之該等組件，使得將該等組件保持於該發送方基板與該傳遞基板之間的一特定位置中。因此可防止滑移，特別是當該等組件未或不再固定至該發送方基板時，且可在該等組件之固定及/或固定移除期間維持對應位置。此外，因此可產生該等組件與該傳遞基板之一接觸，其結果係例如可實現對該傳遞基板之一結合程序。
在本發明之另一有利實施例中提供，在步驟iii)中之該傳遞期間，配置於該傳遞基板上之該等組件接觸及/或將壓力施加至該接收方基板，使得將該等組件固持於該傳遞基板與該接收方基板之間。因此，可防止該等組件之滑移，特別是當其等未或不再固定於該傳遞基板上時，且可在該等組件之固定及/或固定移除期間維持對應位置。此外，因此可產生該等組件與該接收方基板之一接觸，其結果係例如可實現對該接收方基板之一結合程序。
在本發明之另一有利實施例中提供，在該發送方基板及/或該傳遞基板及/或該接收方基板及/或該等組件上施加一釋放層及/或一黏合層，該等層特別是透過該去結合構件及/或該結合構件之作用，改變其等在一黏合劑區域中相對於該等組件之黏合性質。該釋放層及該黏合層特別是對該結合構件及/或該去結合構件起反應。例如，因此可藉由一去結合構件、特別是一雷射釋放固定於一釋放層上之一組件，藉此藉由該雷射熔融該釋放層且因此實現該組件之一釋放。一組件可藉由一結合構件、特別是一雷射之作用保持膠合或固定至一黏合層。與輻射可穿透基板或該等基板中之對應孔組合，因此可有利地選擇性地固定個別組件及/或可移除一固定。
在本發明之另一有利實施例中提供，該發送方基板及/或該傳遞基板及/或該接收方基板經設計成可被雷射輻射穿透。該雷射輻射之引入因此可有利地自各自基板之背離該組件之側進行。例如，該發送方基板可為一玻璃，其在面向該組件之側上包括一釋放層，該釋放層將該等組件固定於該發送方基板上。憑藉該雷射輻射，接著特別是熔融該釋放層或減小該釋放層在各自組件之黏合劑區域中之黏合性質，使得可釋放各自組件。此程序亦可類似地應用於該傳遞基板及該接收方基板。亦可設想，利用一黏合層進行此一程序，其中增加黏合性質或暫時地或永久地結合各自組件。該等基板可例如亦包括孔，使得可有利地引入該雷射輻射，而無須要求該雷射輻射對該基板之穿透性。
在本發明之另一有利實施例中提供，該傳遞基板包括固定元件，該等固定元件在該傳遞期間、特別是藉由表面黏合固定該等組件。接著，該等固定元件接著接觸或將壓力施加至設置於該發送方基板上之組件。因此，將該等組件固定於該傳遞基板上或該傳遞基板之固定元件上。該等固定元件亦可經設計成可個別控制，使得該等固定元件本身可選擇性地接收。在此情況下，僅將該等組件固定於待傳遞之固定元件上。在另一情況下，亦可設想，首先將所有該等組件固定於該傳遞基板上且接著在傳遞至該接收方基板期間，僅憑藉可控制固定元件將選定或待傳遞之組件傳遞至該接收方基板。因此，可以一有利且組件保護的方式實行該傳遞期間之一選擇。
在本發明之另一有利實施例中提供，該等固定元件由一聚合物材料製成及/或經設計成類似於一吸盤。該等固定元件有利地由一塑膠製成且規則地配置於傳遞基板之面向該等組件之側上。特定而言，該傳遞基板具有用於各組件之一合適固定元件。該等固定元件較佳地係有彈性的，其特別是可在該固定期間補償該等組件之小高度差。
亦可設想，藉由一撓性且有彈性之傳遞基板輔助或實現對該等高度差之一補償。此外，吸盤狀形式係有利的，因為可因此產生一表面黏合效應，其可在沒有額外輔助裝置之情況下固定該等組件。
在本發明之另一有利實施例中提供，在該傳遞期間藉由構件、特別是機械及/或氣動構件使該傳遞基板變形，使得特別是自該等固定元件釋放該等組件及/或藉由該等固定元件以在空間及/或時間上偏移之一方式固定該等組件。在此情況下，較佳地在一傳遞模具上配置或裝配該傳遞基板。憑藉該變形、特別是一凹或凸曲率，可藉由該變形調整該等組件與該傳遞基板或與該等固定元件接觸之時間或位置。此外，憑藉該傳遞基板之變形，可有利地調整固定於該傳遞基板上之組件與該接收方基板及/或與配置於該接收方基板上之進一步組件之接觸。亦可有利地調整在傳遞至該接收方基板之後的該等組件之一釋放。在此意義上，該傳遞基板亦可被理解為一結合構件及/或去結合構件。亦可設想，該發送方基板及/或該接收方基板經設計以便可以一受控方式變形。
在本發明之另一有利實施例中提供，該傳遞基板係一膜、特別是彈性膜。若該傳遞基板經設計為一彈性膜，則可特別是實行平緩地接觸該等組件或將壓力施加於該等組件上。
此外，在此情況下，該膜更容易變形。較佳地，在一傳遞模具中配置該膜，其可特別是藉由機械及/或氣動構件以一受控方式使該膜變形。
在本發明之另一有利實施例中提供，該發光二極體由彼此上下及/或彼此並排配置之複數個組件組成，特別是由不同發送方基板提供。因此，可將複數個不同組件傳遞至該接收方基板上及/或至配置於該接收方基板上之進一步組件上。因此，可更靈活地設計製造程序，特別是若在一各自發送方基板上僅製造或設置具有一相同功能之相同電子組件。
在本發明之另一有利實施例中提供，該等組件之位置經儲存於一電子資料處理單元(EDP)中。因此，該EDP可判定哪些組件以何種順序傳遞。亦可設想，該EDP考量已傳遞之組件在該接收方基板上之當前配置。另外，該EDP可分析該等組件之位置且在此基礎上執行對該結合構件或該去結合構件之一控制使得更有效地進行個別組件之固定或固定移除。特定而言，該結合或去結合構件可同時作用於相鄰組件上。然而，原則上仍可能對個別組件造成一影響。
本發明描述一種用於將組件、特別是功能組件，特別是選擇性地自一發送方基板傳遞至一接收方基板之方法。該傳遞憑藉一傳遞基板進行。該等組件特別是微晶片、記憶體晶片、LED、MEM等。亦可設想，在一並置、一配置或堆疊之前不等同於一獨立功能組件之組件。在更廣泛意義上，組件應被理解為意謂小於本發明文件中所描述之基板，特別是發送方、傳遞及接收方基板之一部件。特定而言，一組件可僅僅係一特殊材料之一層、特別是氧化物層或氮化物層。
在本發明之另一有利實施例中提供，僅將有作用的、未損壞之組件傳遞至該接收方基板上。就此而論，有作用的、未損壞之組件係已通過電測試且因此運作之組件。憑藉選擇性傳遞，因此可確保僅將該等有作用的組件自該發送方基板傳遞至該接收方基板。特定而言，因此可減少有缺陷地製造產品之數目且可更有效地實行製造。
在本發明之另一有利實施例中提供，該結合構件及/或去結合構件係一雷射。由該雷射發射之雷射輻射可作用於整個區域上方及/或以一極類似點狀的方式作用於該等基板或該等組件上。可藉由該雷射輻射改變一表面、特別是一組件固定於或位於及/或將位於其上之一基板表面之一部分區域之黏合性質。一雷射尤其有利於個別組件之固定或固定移除，因為一雷射可以一極為位置特定的方式起作用。此外，該雷射輻射之引入可特別是藉由複數個雷射迅速地進行。此外，可設想，藉由特別是廣泛地起作用之一雷射同時一起固定已通過測試之複數個相鄰組件或移除該固定。因此，可更快速地且更有效地實行該傳遞。當使用一雷射時，該等基板可經設計為可被雷射輻射穿透。可設想可被雷射輻射穿透之材料及該等基板中之孔。亦可藉由該組件將該雷射輻射橫向地引入，特別是至該基板上。然而，原則上，可使用其他物理及/或化學及/或機械作用之去結合及去結合構件。用作一結合構件及/或去結合構件之一雷射之雷射輻射具有在10 nm與100 µm之間、較佳地在100 nm與50 µm之間、最佳地在200 nm與6 µm之間的波長範圍內之一波長。無法更精確地指定較佳波長，因為結合及去結合構件通常亦必須適應於對應黏合劑區域。若將該等雷射用作結合及/或去結合構件，則所使用波長及/或強度特別是取決於使用何種類型之黏合劑區域。
可選擇性地傳遞該等組件。較佳地將相同技術用於該等組件之結合及去結合。
組件
因此，該等組件可為例如以下物件： 1.層、特別是 1.1 氧化物層 1.2 氮化物層 1.3 金屬層、特別是 1.3.1 Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Ta、Zn、Sn 1.4 半導體層、特別是由以下項製成 1.4.1 Ge、Si、α錫、富勒烯、B、Se、Te 1.5 複合半導體層，特別是由以下項製成 1.5.1 GaAs、GaN、InP、InxGal-xN、InSb、InAs、GaSb、AlN、InN、Gap、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe,CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGal-xAs、GaS、GaSe,GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC、SiGe 1.6 玻璃、特別是 1.6.1 藍寶石玻璃 2. 功能組件 2.1 機械組件、特別是 2.1.1 MEMS 2.2 電子組件、特別是 2.2.1 LED 2.2.2 晶片、特別是 2.2.2.1 微晶片 2.2.2.2 記憶體晶片。
該等組件之厚度在0 μm與1000 μm之間、較佳地在0 μm與800 μm之間、又更佳地在0 μm與500 μm之間、最佳地在0 μm與250 μm之間、極佳地在0 μm與100 μm之間。由於小型化，該等組件將來可能趨於甚至小於10 µm。
結合及去結合構件
本發明之一基本特徵在於以下事實：結合及去結合構件，在下文中亦統稱為構件，用來將該等組件結合至基板或將該等組件與基板去結合。此等構件通常可作用於一基板之整個區域上方或以一非常位置特定的方式起作用。作用於一大區域上方之構件例如係來自一表面輻射器之電磁射線，特別是熱輻射。接著，該表面輻射器較佳地具有至少與該基板之區域一樣大之一輻射區域。藉由使一基板側經受作用於一大區域上方之此電磁輻射，可使一基板單側暴露於溫度。亦可設想，使用一雷射，其被光學系統加寬且可作用於待被作用之表面之全區域上方。
亦可設想，將其中定位有該等基板之腔室加熱至一溫度。然而，在此情況下，將在兩側上加熱該等基板。
當然，所使用溫度應位於不導致該等組件及/或該等基板受損之範圍內。因此，該等溫度較佳地儘可能低。用來達成根據本發明之效應之溫度小於1000℃、較佳地小於500℃、又更佳地小於250℃、最佳地小於100℃、極佳地小於50℃。
在一非常特別較佳的實施例中，該等構件特別是以一局部限制方式起作用之電磁輻射器、特別是行動電磁輻射器，特別是雷射。藉由在待照射之表面與雷射之間的一相對移動，使一局部目標可調整之結合及/或去結合成為可能。該等構件本身較佳地係靜態的，而該基板或其上固定有該基板或該等基板之基板支架係移動的。
發送方基板
發送方基板用來表示具有複數個組件之一基板。其表示在傳遞程序開始時存在且使待傳遞至接收方基板之組件可用之基板。
在一實施例中，可已在該發送方基板上或由該發送方基板製造該等組件。尤其是當該等組件係簡單層時，後者可藉由特殊物理及/或化學程序直接製造於該發送方基板上且視情況藉由進一步程序步驟來結構化。
在一進一步實施例中，該等組件已製造於另一位置處且已定位於該發送方基板上以便在以下傳遞程序中由該傳遞基板接收。接著較佳地藉由一黏合機構將該等組件連接至該發送方基板。該發送方基板較佳地經設計使得藉助於其將該等組件固定於該發送方基板上之黏合機構可自該發送方基板之下側弱化。該弱化較佳地憑藉一雷射進行。由於該黏合機構之弱化，在已將該等組件結合至該傳遞基板之後，可在後續傳遞程序中容易地將該等組件自該發送方基板移除至該傳遞基板上。黏合機構之弱化及組件之後續移除亦稱為去結合。特定而言，去結合程序可選擇性地進行。因此，可設想，自該發送方基板僅釋放已通過一先前功能測試、特別是電測試之組件。因此，防止受損組件被傳遞。
亦可設想，將該等組件簡單地放置於該發送方基板上且在該發送方基板與該等組件之間無特殊固定機構起作用。
在一特別較佳的實施例中，該發送方基板係一玻璃基板。
在另一實施例中，該發送方基板係一晶圓、特別是一矽晶圓。
在一進一步實施例中，該發送方基板係一膜。該膜較佳地在一框架上伸出以便固定及穩定該框架。然而，亦可設想，使用具有連續膜之裝置以便實行該程序。
在最一般實施例中，一發送方基板可為可自其移除組件之任何種類之表面、特別是平坦表面。例如將可設想一種桌子表面、機器表面或花崗岩平板表面。因此，與兩種其他提及類型之基板(傳遞基板及接收方基板)相比，術語發送方基板因此應在最廣泛的可能意義上進行解釋。
傳遞基板
該傳遞基板用來將該等組件自該發送方輸送至該接收方基板。
在一特別較佳的實施例中，該傳遞基板係一膜。該膜在一框架上伸出以固定及穩定該框架。然而，亦可設想，使用具有連續膜之裝置來實行該程序。一膜具有以下優點，其係有彈性且撓性的，其結果係在幾微米或奈米之高度差但一表面位於下面之情況下，特別容易接觸組件。
在一較不佳實施例中，該傳遞基板由玻璃製成。
在一最不佳實施例中，該傳遞基板係一晶圓，特別是其係一矽晶圓。
在一實施例中，該傳遞基板係具有複數個固定元件之一基板。
該等固定元件用來將該等組件保持固定。該等固定元件可為 1. 機械固定物、特別是 1.1.      夾具 2. 真空固定物、特別是具有 2.1.      可個別控制之真空軌道 2.2.      彼此連接之真空軌道 3. 電固定物、特別是 3.1.      靜電固定物 4. 磁性固定物 5. 黏合固定物、特別是 6. Gel-Pak固定物 7. 具有黏合劑表面、特別是可控制表面之固定物。
該等固定元件特別是電子可控制的。一真空固定物較佳地由複數個真空軌道組成，該等真空軌道出現於該傳遞基板之表面處。該等真空軌道較佳地係可個別控制的。
該等固定元件具有待傳遞之組件之近似大小且較佳地對稱地設置於該傳遞基板之表面處。該等固定元件較佳地以一吸盤狀方式設計。此種類之傳遞基板結合一傳遞模具一起使用，此在本發明之揭示內容中予以詳細描述。
接收方基板
該接收方基板被理解為產品基板，在其上固定有特別是來自複數個傳遞基板之組件及/或重複使用同一傳遞基板之所有組件。
組件可經由一或多個傳遞基板自不同發送方基板傳遞至同一接收方基板。因此，使得一特別有效且尤其是多樣化的組件傳遞成為可能。可將具有一不同功能性之組件與同一接收方基板上之複數個發送方基板或傳遞基板源結合。至該接收方基板上之一傳遞亦意謂，該等組件可跟隨已配置、特別是結合於該接收方基板上之組件。
可不同地塗佈所揭示基板。特定而言，該等層係功能層，其之黏合性質可藉由一外部影響來改變。因此，可將該等組件自一個基板傳遞至另一基板。特別是提供局部地，即，作用於單個組件上之一影響。此特徵決定性地區別該方法與先前技術，在先前技術中，特別是使用熱來全區域影響整個晶圓，以便引起黏合性質之一改變。
結合類型
較佳地使用以下類型之結合之至少一者以便經由一黏合劑區域將該等組件連接至一載體： Ÿ  黏合結合， Ÿ  金屬-金屬結合， Ÿ  共晶結合， Ÿ  陽極結合，或 Ÿ  熔融結合。
個別列出結合類型關於其等運作模式予以更詳細描述。
在黏合結合之情況下，可設想，作用的結合構件、特別是一雷射至少改良所使用黏合劑之黏合性質。例如將可設想，黏合劑之兩種組分之混合藉由引入熱來進行，且僅藉由該混合產生一黏合性質。在另一實施例中，用於黏合結合之結合構件係特別是以一局部限制方式起作用之一冷卻裝置，此降低溫度。將可設想，黏合劑具有分子側鏈，該等分子側鏈決定性地負責黏合性質。冷卻可減少熱運動且特別是藉由自組裝，該等分子鏈可經歷一更明顯的平行對準，此導致黏合性質之一增加。
在金屬-金屬結合之情況下，結合原理在於以下事實：兩個金屬、特別是彼此完全可混合之金屬彼此接觸且透過一結合構件、特別是一雷射之作用加熱至一程度使得其等藉由壓縮及/或擴散彼此結合。如此產生之一結合在大多數情況下、尤其是在形成金屬間相時難以分離，使得其應特別是用作一最終狀態之一結合，即，一組件至不再必須釋放之一表面之一連接。
在共晶結合之情況下，結合原理在於以下事實：經由共晶溫度加熱能夠構成一共晶之至少兩個金屬。較佳地使用其等共晶溫度儘可能低之金屬組合物，使得僅需要小的溫度增加。此等共晶合金之優點在於以下事實：可熔融共晶任何次數。因此，與具有一相對高熔點之一金屬-金屬結合相比，共晶結合亦適合於去結合程序。然而，一缺點係，去結合程序必須在共晶溫度以上進行，在該溫度下存在相當數量之熔化物，此可能污染基板之部分。
在陽極結合之情況下，藉由施加一電場來促成離子之移動。陽極結合主要用於玻璃基板。將不更詳細地論述此結合程序。陽極結合對於熟習此項技術者而言係已知的。
用於根據本發明之方法之最重要結合程序之一者係熔融結合。在熔融結合之情況下，特別是利用電漿清潔及處理之待連接表面特別是在室溫下彼此直接接觸。因此，此導致一預結合之形成。較佳地藉由一溫度增加將預結合轉換成一永久結合。此等機制對於熟習此項技術者而言係非常熟知的。熔融結合對於根據本發明之方法而言係較佳的，尤其是因為一組件表面與載體基板之間的一預結合表示一種以一可容易釋放的方式將該組件暫時地固定至該載體基板之迅速且有效的方法。在此情況下，該載體基板當然必須適合於熔融結合或預結合。一進一步優點在於以下事實：在半導體工業中尋求熔融結合以便將複數個組件彼此直接連接，較佳地藉由所謂混合結合。在本文中將更詳細地描述此特別較佳的實施例。
在將該等組件自該發送方傳遞至該傳遞基板期間，必須選擇藉助於其可將該等組件充分地固定至該傳遞基板之結合程序。然而，在將該等組件自該傳遞基板傳遞至該接收方基板期間，憑藉一去結合構件足夠容易地再次釋放此產生之結合。因此，結合及結合或去結合構件之類型之正確組合係重要的以便能夠以一順利方式、特別是無誤差地實行該等組件之傳遞。
該傳遞基板特別較佳地係具有一黏合劑層之一膜或一硬質基板。在此情況下，黏合劑層之黏合劑可為自黏合的，即，不必藉由根據本發明之一黏合構件，如同例如一黏合劑來活化。然而，至少藉由一恰當結合構件之作用有利地改良黏合劑層之黏合強度。
在一特定實施例中，使用一多層系統以便將該等組件結合至該載體。例如，可設想，組合包括一釋放層及一黏合劑層之一層系統。
該釋放層亦可稱為反應層，因為一去結合構件之作用導致一反應，此導致該載體與該組件之間的黏合之一降低且因此實現自該載體釋放該組件。釋放層及黏合層之順序係任意的，然而較佳地將釋放層施加至該載體。公開案WO2017076682A1揭示例如一種多層系統，其中將該釋放層施加至該產品基板而不施加至該載體基板。就一黏合劑區域之更一般概念而言，本發明之揭示內容概述此一多層系統之使用。
可將該等層系統施加於該等基板之一者之全區域上方及/或該等組件上。技術上，一層系統在一基板上之一全區域施加係更容易的，因為可使用已知塗佈技術，諸如離心及/或噴灑塗佈。雖然此一層系統在一基板上之一部分施加係可能的，但由於成本，其係較不佳的。當然可設想一層系統之一全區域施加與後續結構化。若一層系統待施加於一基板上，則其較佳地完全覆蓋其表面。
傳遞程序
在根據本發明之一闡釋性方法之一第一程序步驟中，在一發送方基板上製造或放置組件。可將該等組件裝載至該發送方基板上或直接製造於該發送方基板上。該等組件特別是經由其等第一組件表面以使得特別是以一目標方式控制之組件自該發送方基板表面之一直接釋放可進行之一方式連接至該發送方基板表面。若在該發送方基板與該等組件之間不存在連接，因為例如已簡單地將該等組件放置於該發送方基板上，則更容易將其等自該發送方基板移除。
在第一程序之一可選第二步驟中，可對各個別組件進行功能能力測試。可藉由一電腦程式儲存有缺陷組件或不符合規範之組件之位置以便防止該等組件之一後續傳遞程序。特定而言，此程序步驟亦可在第一程序步驟之前針對各組件個別地進行。然而，技術上，首先定位該等組件且接著藉由一自動量測探針快速地測試該等組件可能係有利的。
在第一程序之一第三程序步驟中，進行一傳遞基板與發送方基板之對準。該對準機械地及/或光學地進行。一對準較佳地憑藉對準標記進行，該等對準標記經定位於該發送方基板及該傳遞基板上。光學對準系統較佳地用於該對準。
在第一程序之一第四程序步驟中，使該等組件之特別是與該發送方基板上之第一組件表面相對之第二組件表面與該傳遞基板表面接觸或至少靠近該傳遞基板表面，使得可將該等組件自該發送方基板傳遞至該傳遞基板。特定而言，可能必需使該傳遞基板及/或該發送方基板局部地變形至一程度使得第二組件表面接觸該傳遞基板表面。若該傳遞基板係一膜，則此程序可特別容易地實行，因為該膜可容易局部地變形。
例如，將可設想藉由一小模具自該膜之後側來變形。該模具特別是與雷射或雷射組件組合。
在第一程序之一第五程序步驟中，在該發送方基板上之組件之第二組件表面與傳遞基板表面之間進行結合。該結合較佳地係一暫時性結合。在一特別較佳的實施例中，各個別組件之第二組件表面與傳遞基板表面之間的結合個別地，即，選擇性地進行。因此，在此程序步驟中，已可做出待傳遞該等組件之哪一者(若有)之一決定。在一特別較佳的實施例中，該結合藉助於一雷射進行。在所公佈之專利申請案中之其他點處全面地解釋用於產生一結合之不同選項。
在第一程序之一第六程序步驟中，在該發送方基板上之組件之第一組件表面與該發送方基板表面之間進行去結合。
將亦可設想，將程序步驟五與六彼此交換，即，首先進行發送方基板上之組件之第一組件表面與傳遞基板之間的去結合程序且接著進行該等組件之第二組件表面與傳遞基板之間的結合程序。由於作用於該等組件上、特別是兩側上之一力(該力將該等組件固持於適當位置)，可交換程序步驟。然而，隨著程序步驟之交換，存在該等組件滑移之風險。將亦可設想，同時進行結合程序及去結合程序。
在另一實施例中，將可設想，同時進行結合程序及去結合程序。
在第一程序之一第七程序步驟中，進行先前裝載之傳遞基板與一接收方基板之一對準。該對準機械地及/或光學地進行。一對準較佳地憑藉對準標記進行，該等對準標記經定位於該傳遞基板及該接收方基板上。光學對準系統較佳地用於該對準。
在第一程序之一第八程序步驟中，使該傳遞基板上之組件之第一組件表面與該接收方基板表面或已裝載於該接收方基板上之其他組件之第二表面接觸。特定而言，可能必需使該傳遞基板及/或該接收方基板局部地變形至一程度使得第一組件表面接觸接收方基板表面或先前固定組件之表面。變形之所有優點及缺點已在將該等組件接收於該傳遞基板上之第四步驟中予以描述且因此可類似於應用於第八步驟。
在一第九程序步驟中，接著再次進行一去結合及結合程序。此次在該傳遞基板上之組件與該傳遞基板之間進行去結合程序，同時將該等組件接合、特別是同時接合至接收方基板表面或已裝載於接收方基板上之其他組件之第二表面。所採用之結合或去結合程序已在發明中予以描述且取決於在各情況下需要哪個程序而予以選擇。尤其是在複數個組件彼此上下堆疊之情況下，熔融結合、較佳地混合結合該等組件，只要其等具有混合表面即可。憑藉一混合結合，有利地產生該等組件之間的一所要導電連接。
在根據本發明之一第二闡釋性傳遞程序中，該傳遞基板特別是具有個別固定元件，該等固定元件憑藉表面黏合能夠固定該等組件。該等固定元件較佳地係非常有彈性、撓性且可膨脹的主體，較佳地由聚合物材料製成。顯然，固定元件可被視為一種吸盤。當使用此一載體時，特別是使用完全不同的結合及去結合構件。
在此情況下，一結合構件應被理解為意謂該等固定元件與一發送方基板上之組件之接觸，特別是與力之一施加組合。可憑藉一按壓元件、例如憑藉一輥子進行力之施加。
作用力介於0 MPa與1000 MPa之間、較佳地介於0 MPa與750 MPa之間、又更佳地介於0 MPa與500 MPa之間、最佳地介於0 MPa與250 MPa之間、極佳地介於0 MPa與100 MPa之間的範圍內。
亦可設想，其中由該等組件接觸該等固定元件之腔室中之壓力待增加。該等固定元件因此更強烈地按壓至該等組件上。
在此情況下，一去結合構件主要被理解為該傳遞基板以使得已在該接收方基板上固定、特別是永久地結合該等組件之後連續地自該等組件、特別是自外側向內釋放該等固定元件之一方式彎曲。此結合程序例如可利用來自第一程序之一結合構件、例如一雷射非常好地進行。
在根據本發明之第二闡釋性方法中，使用一傳遞模具，其在下側處具有具複數個固定元件之一傳遞基板。該程序之主要差異在於，該傳遞模具以比簡單傳遞基板稍微更複雜之一方式結構化。除一傳遞基板之外，其較佳地亦包括進一步控制構件，該控制構件特別是可影響且尤其是控制該傳遞基板之曲率。此外，該傳遞基板包括先前所描述之傳遞基板中不存在之固定元件。將亦可設想，使用具有各自固定元件而沒有位於後方之一模具之傳遞基板。然而，接著將必須藉由其他機械及/或氣動及/或液壓構件進行用於結合及去結合之曲率，此將必須與該傳遞基板無關。現在詳細地描述第二程序。
在第二程序之一第一程序步驟中，在一發送方基板上製造或放置組件。可將該等組件裝載至該發送方基板上或直接製造於該發送方基板上。該等組件特別是經由其等第一組件表面以使得特別是以一目標方式控制之組件自該發送方基板表面之一直接釋放可進行之一方式連接至該發送方基板表面。若在該發送方基板與該等組件之間不存在連接，因為例如簡單地將該等組件放置於該發送方基板上，則更容易將其等自該發送方基板移除。然而，一不利效應係，在此情況下，在一進一步程序步驟中，該等組件在其等由該傳遞基板接觸之前及/或之同時可能滑移。
在第二程序之一可選第二步驟中，可對各個別組件進行功能能力測試。可藉由一電腦程式儲存有缺陷組件或不符合規範之組件之位置以便防止該等組件之一後續傳遞程序。特定而言，此程序步驟亦可在第一程序步驟之前針對各組件個別地進行。然而，技術上，首先定位該等組件且接著藉由一自動量測探針快速地測試該等組件可能係有利的。
在第二程序之一第三程序步驟中，進行該發送方基板與一傳遞基板之對準。該傳遞基板較佳地係一傳遞模具之部分，但亦可單獨使用。與來自第一程序之傳遞基板相比，該傳遞基板包括複數個固定元件。該對準機械地及/或光學地進行。較佳地，藉由對準標記進行一對準，該等對準標記經定位於該發送方基板及該傳遞基板上。光學對準系統較佳地用於該對準。特別是該傳遞基板經定位使得該傳遞基板之固定元件經定位於待傳遞之組件上方。此態樣不同於第一程序。
在第二程序之一第四程序步驟中，使該發送方基板上之組件之第二組件表面與該等固定元件之固定元件表面接觸。特定而言，可能必需使傳遞基板及/或發送方基板局部地變形至一程度使得第二組件表面接觸固定元件表面。若該傳遞基板係一膜，則此程序可特別容易地實行，因為該膜可容易局部地變形。然而，該等固定元件與一膜之組合在技術上係不利的，因為該膜對於該等固定元件之能力可能不足。因此，較佳地將該等固定元件製造或緊固於具有必要穩定性、特別是一特定剛性之傳遞基板上。由於該等固定元件較佳地係聚合物固定元件、特別是吸盤狀固定元件，因此可設想，藉由產生一過大壓力來實行該傳遞基板之變形。若在一真空中將該等組件自該發送方基板傳遞至該傳遞基板，則可設想使用機械輔助裝置、特別是輥子來施加壓力。然而，在一特別簡單的實施例中，僅該傳遞基板在該發送方基板之方向上移動至一程度使得藉由該移動建置足夠壓力以便在該等固定元件與該等組件之間產生一完整接觸。
在第二程序之一第五程序步驟中，在該發送方基板上之組件之第二組件表面與傳遞基板表面之間進行結合。該結合較佳地係一暫時性結合。在一特別較佳的實施例中，各個別組件之第二組件表面與傳遞基板表面之間的結合係個別地，即，選擇性地進行。因此，在此程序步驟中，已可做出待傳遞該等組件之哪一者(若有)之一決定。然而，由於在第二程序中使用固定元件，因此僅當該等固定元件本身可切換或可控制時可進行待傳遞之組件之選擇性抉擇。將可設想可切換、黏合劑固定元件，其等可憑藉電流改變其等黏合性質。由於該等固定元件類似於吸盤而構建，因此將可設想憑藉一目標、局部力效應產生一選擇性結合程序。出於此目的，然而，用於自後側施加力之構件本身將必須能夠以一局部選擇性方式起作用，即，具有一受限直徑。例如將可設想使用一銷。尤其是當使用一傳遞模具時，此銷將可能必須定位於該傳遞模具內側。該傳遞模具之設計將對應地複雜化。然而，將可設想，在傳遞模具表面後方提供一小x-y平移單元，該平移單元可在z方向上移動一銷。若省略該傳遞模具，則用於施加力之構件必須係其中進行該等組件之傳遞之系統之部分。
在第二程序之一第六程序步驟中，在該發送方基板上之組件之第一組件表面與該發送方基板表面之間進行去結合。
將亦可設想，將程序步驟五與六彼此交換，即，首先進行發送方基板上之組件之第一組件表面與傳遞基板之間的去結合程序且接著進行該等組件之第二組件表面與傳遞基板之間的結合程序。由於作用於該等組件上、特別是兩側上之一力(該力將該等組件固持於適當位置)，可交換程序步驟。然而，隨著程序步驟之交換，存在該等組件滑移之風險。
在另一實施例中，將可設想，同時進行結合程序及去結合程序。
在第二程序之一第七程序步驟中，進行先前裝載之傳遞基板與一接收方基板之一對準。該對準機械地及/或光學地進行。一對準較佳地藉由對準標記進行，該等對準標記經定位於該傳遞基板及該接收方基板上。光學對準系統較佳地用於該對準。
在第二程序之一第八程序步驟中，使該傳遞基板上之組件之第一組件表面與接收方基板表面或已裝載於接收方基板上之其他組件之第二表面接觸。特定而言，可能必需使該傳遞基板及/或該接收方基板局部地或全局地變形至一程度使得第一組件表面接觸接收方基板表面。特別是將可設想，憑藉定位於該傳遞基板後方之一按壓裝置所得之傳遞基板之一全局曲率。
第九程序步驟主要包括自該傳遞基板之固定元件釋放該等組件，其對應於去結合程序。類似於本發明中已提及之方法，在該等組件與接收方基板表面或已裝載於接收方基板上之其他組件之第二表面之間再次進行結合程序。此次同樣地，其再次涉及一融合結合、較佳地一混合結合。
變形之所有優點及缺點已在將該等組件接收於該傳遞基板上之第四步驟中予以描述且因此可類似於應用於第八步驟。
因此，第一程序與第二程序之間的差異主要在於以下事實：在第二程序中該等固定元件用作重要的技術組件。
一重要任務歸因於該等組件之配置之位置。在本發明之一較佳延伸中，該等組件之位置本身藉由一自組裝程序來建立。出於此目的，必須特殊地準備其上定位有該等組件之表面。
自組裝之一實施例在於用一低黏合力層(ASL，抗黏層)塗佈表面，該低黏合力層僅覆蓋其中不得定位有該等組件之表面之區域。此等區域在下文中稱為ASL區域。其處待放置有該等組件之表面之區域未被抗黏層覆蓋且因此具有一高黏合力，尤其是相對於抗黏層而言。此等區域隨後稱為黏合劑區域。一旦將該等組件定位於黏合劑區域上，就可藉由該等組件歸因於存在黏合力梯度而移動至黏合劑區域中之事實校正微米或奈米範圍內之定位誤差。黏合劑區域本身較佳地係對稱的，特別是至少矩形。黏合劑區域之對稱性越大，自組裝程序越有效。
自組裝之一進一步實施例在於以下事實：用一流體塗佈其中待定位有一組件之區域。剩餘周圍區域(其中未定位有任何組件)保持未經處理。當將一組件放置於此等區域之一者上時，該組件藉由黏合程序及伴隨之能量最小化程序而以使得該組件憑藉自組裝程序定位成與流體對稱之一方式拉入流體中心。若因此已非常精確地、特別是以微米或奈米精度沈積流體，且待定位之組件之接觸表面具有相同於流體之形狀，則較佳地對準該組件使得其與流體達成一靜止對稱。該組件在其位於流體上方時係浮動的。當然，當流體可能永久地存在於該表面與該組件之間時或至少直至該組件進一步移除至另一基板上時，根據本發明之此自組裝才有意義。
多層LED
在一特別較佳的實施例中，使用該方法以便製造一發光二極體(LED)、較佳地一白光LED (wLED)。可以多種方式製造wLED。
在半導體工業中製造若干類型之白光。一種可能性係使用磷光層，其等被激發輻射照射且發射一更寬帶光譜的光(WO2013041136A1)。
製造白光之一進一步可能性在於製造一wLED，該wLED包括三個個別LED，來自該三個個別LED自之各個別LED發射一特定波長範圍內，特別是紅色(rLED)、綠色(gLED)及藍色(bLED)波長範圍內之光。可藉由混合三個顏色分量來製造白光。一般而言，三個個別LED之各者由不同材料及製造程序等來製造。該等個別LED之各者被視為藉助於該程序可組合於一接收方基板上以形成一完全運作wLED之一組件。
在根據本發明之一第一闡釋性實施例中，待製造之wLED由彼此並排配置之三個LED (rLED、gLED及bLED)組成。
在一第二、較佳實施例中，待製造之wLED由彼此上下堆疊之三個LED (rLED、gLED及bLED)組成。為了確保底部LED及/或中間LED之光不被位於上方之LED或若干LED過於強烈地吸收，LED之大小可自底部至頂部連續地減小。在一改良式第二實施例中，底部LED覆蓋全區域，結合至後者之中間LED係環形的且具有大於中間LED之一內徑之最上方LED亦係環形的。環形LED之形狀可為矩形或圓形。
LED較佳地以使得最小化位於上方之LED之吸收之一方式堆疊。正確順序通常必須憑經驗判定且主要取決於個別LED之材料。
圖1a展示一第一程序步驟，其中將一發送方基板1設置成具有有複數個組件2。在此程序步驟中，組件2較佳地已經由黏合劑區域3牢固地連接至發送方基板1，使得防止組件2之滑移。藉由一化學及/或物理黏合劑區域3產生組件2與發送方基板1之間的牢固連接。黏合劑區域3例如可為用作發送方基板1與組件2之間的一結合劑之一黏合劑。亦可設想，該黏合劑區域係一微米級或一奈米級之一區域，其中直接黏合力、特別是範德華力作用於發送方基板1與組件2之表面之間。亦可設想，黏合劑區域3係一金屬合金、特別是焊料。亦可設想，黏合劑區域3係一黏合劑膜。針對黏合劑區域3，通常討論藉助於其可將組件2固定於發送方基板1上之所有化學及/或物理效應及/或材料及/或物件。一黏合劑區域3在圖1中始終僅表示於一組件2與發送方基板1之間的邊界上。然而，亦可設想，黏合劑區域3在整個傳遞基板表面1o上方延伸。特定而言，黏合劑區域3接著係已藉由一塗佈程序、特別是一離心塗佈程序施加之一層。亦可設想，組件2係已藉由合適塗佈程序首先施加於全區域上方且藉由其他程序步驟適當地結構化之一層、特別是氧化物層或氮化物層。在此情況下，黏合劑區域3僅僅對應於該層與發送方基板1之間的邊界表面、介面。在此情況下，該層因此直接連接至發送方基板1。當然亦可設想，組件2簡單地表示已對應地沈積及結構化之一層系統。在所有附圖中，發送方基板1以實例方式表示為一晶圓，但基本上可為任何種類之基板、亦特別是一玻璃基板或一膜。
圖1b展示一第二程序步驟，其中在發送方基板1之組件2上方定位且固定一傳遞基板4，特別是已在一框架5上伸出之一膜。特定而言，來自傳遞基板4之後側之壓力之一輕微施加已足夠。亦可設想，在其上伸出構建為一膜之傳遞基板4之框架5在發送方基板1之方向上移動，使得傳遞基板4被預裝載且按壓於組件2上。特定而言，在接觸之前，可已相對於發送方基板1傳遞基板4。該對準較佳地藉助於對準標記(未展示)及光學輔助裝置、特別是對準系統(例如：對準器，未展示)進行。
圖1c展示一第三程序步驟，其中藉助於一結合構件3、特別是藉助於一雷射，經由組件表面2o以使得在組件2與傳遞基板4之間形成一黏合劑區域3之一方式進行組件2之一結合程序。藉助於一去結合構件7、較佳地亦藉助於一雷射之一去結合程序特別是同時、又更佳地以一小時間及/或路徑偏移進行。較佳地，此去結合程序透過發送方基板1進行。將亦可設想與傳遞基板4之側去結合。然而，用於去結合之去結合構件7不得跟傳遞基板4與組件2之間的黏合劑區域3具有任何相互作用。在一特別較佳的實施例中，將同時實行結合程序及去結合程序。將亦可設想，例如使用一雷射，該雷射一方面充當一結合構件6且在組件2與傳遞基板4之間產生一結合程序，另一方面充當一去結合構件7且在組件2與發送方基板1之間實行一去結合程序。據此，組件2之不同側處之黏合劑區域3將必須對雷射6之光子起不同反應。該圖僅以實例方式表示四個組件2之結合或去結合程序(就此而論亦參見圖1d)以便繪示傳遞程序已可在此程序步驟中選擇性地進行。一選擇性傳遞程序之原因將係一些組件2有缺陷且因此不得傳遞。當然，可傳遞所有組件2。特定而言，實際上有缺陷組件2根本不應存在於一發送方基板上。然而，若該等組件經製造於發送方基板1上，則一些組件2可在製造程序期間確實有缺陷。在此情況下，選擇性抉擇將有技術意義且係必需的。
圖1d展示一第四程序步驟，其中傳遞基板4經定位於一接收方基板8上方、特別是與接收方基板8對準。該對準較佳地憑藉對準標記(未展示)且藉助於一光學對準系統(未展示)進行。
圖1e展示一第五程序步驟，其中在傳遞基板4之組件2與接收方基板8之組件2接觸之後，一去結合構件7、特別是一雷射，在傳遞基板4之組件2與傳遞基板4之間較佳地透過傳遞基板4之後側實行一去結合程序。在組件2之間製造一黏合劑區域3藉助於一結合構件6、特別是同時進行。該圖僅以實例方式展示三個組件2之去結合程序以便繪示在此程序步驟中可再次選擇性地實行傳遞程序。
在一非常較佳的實施例中，僅藉由一選擇性作用的去結合構件7自傳遞基板4釋放組件2，而結合構件6並非一選擇性結合構件，而是作用於該區域上方之一結合構件。例如，將可設想一經加熱周圍區域。特別是當組件2待藉由一金屬物理結合程序或藉由一熔融結合程序永久地彼此連接時，這是有意義的。
圖1f展示一第六程序步驟，其中利用單個剩餘組件2抬起及移除傳遞基板4。可見，總共傳遞三個組件2。特定而言，藉助於圖1e中所表示之結合構件6之結合程序亦僅可在達到此程序步驟時實行。傳遞基板4亦具有一組件2，該組件2例如可傳遞至另一接收方基板8。
當然，將始終相同數量個組件2自一發送方基板1傳遞至一接收方基板8係較佳的。通常，首先始終將組件2之各組件層完全裝載於一接收方基板8中。接著，可且應在一進一步組件層中建置進一步組件2，其等特別是亦可具有一不同功能。
因此，圖1a至圖1f之程序步驟始終僅展示一個組件層之數個組件2之傳遞。接著，可將圖1a至圖1f之程序步驟重複任何次數以便建置進一步組件層，通常一任意數目。
第二程序未用數字明確地表示。主要區別在於以下事實：圖3a至圖3c中所表示及所描述之傳遞模具11用於組件2之傳遞。傳遞模具11可與用於組件2之傳遞之其他結合及去結合構件一起使用。特定而言，組件2之傳遞由於以下事實而予以促進：傳遞基板4’之固定元件10可固定組件2，而不必使用其他結合構件。組件2自傳遞基板4’之固定元件10之釋放接著較佳地憑藉根據圖3b及圖3c之一者之一傳遞基板4’之一曲率進行。然而，可再次憑藉所提及之結合及/或去結合構件(6、7)進行與發送方基板1之去結合程序或至接收方基板8之去結合程序。因此，可彎曲傳遞基板4’及/或整個傳遞模具同時表示一結合及去結合構件(6、7)。
圖2展示一接收方基板8之一最終產品，藉由該方法已在其上製造複數個組件群組、特別是白光LED 9。白光LED 9由三個不同組件2、2’、2’’組成。組件2、2’、2’’之各者係一獨立單色LED，即，一相當特定的波長範圍之一發光二極體。例如，組件2係一紅光LED (rLED)，組件2’係一綠光LED (gLED)且組件2’’係一藍光LED (bLED)。透過單色LED之組合，因此可以一直接方式製造白光LED 9。在其他圖及附圖描述中解釋白光LED 9之進一步實施例。
在進一步圖中，表示白光LED 9之特殊實施例。藉由該程序製造此等白光LED 9。單色LED 2、2’、2’’之一二極體之不同半導體區域之表示無需正如接觸件之表示。白光LED 9之表示僅具有展示實施例之目的。
圖3a展示處於一第一位置中之一傳遞模具11。傳遞模具11由具有複數個固定元件10之一傳遞基板4’組成。固定元件10經由固定元件表面固定至對應組件2 (未展示)。
傳遞模具11可包括變形元件12，其等可使傳遞基板4’變形。變形元件12可為銷，其等可在傳遞模具11之內部沿x-y-z方向、特別是藉由一合適機械系統移動，且因此能夠使傳遞元件4’局部地彎曲。在當前情況下，變形元件12被表示為一供應管線且可將一流體、特別是一氣體或一氣體混合物遞送至腔室中。
圖3b展示處於一第二位置中之一傳遞模具11。變形元件12確保傳遞基板4’可彎曲成一凹形狀。若變形元件12係一供應管線，則該曲率特別是藉由抽空內部空間而出現。
圖3c展示處於一第三位置中之一傳遞模具11。變形元件12確保傳遞基板4’可彎曲成一凸形狀。若變形元件12係一供應管線，則該曲率特別是藉由在內部空間中產生一過大壓力而出現。
圖4展示一第一白光LED 9，其包括單色LED 2、2’、2’’。已將單色LED 2’及2’’製造成一環形形式。底部LED 2經形成於全區域上方。LED 2’及2’’之圓形開口容許底部LED或若干底部LED發射光子。因此，可藉由紅色、綠色及藍色之三個波長範圍內之光子發射以一直接方式製造一白光LED 9。特定而言，可使用該程序以便實行LED 2、2’、2’’之堆疊。單色LED 2、2’、2’’之環形形狀可為任意的，但較佳地為矩形、又更佳地為圓形。
圖5展示一第二白光LED 9’，其中個別LED 2、2’、2’’在大小及相對位置上彼此不同。
1:發送方基板 1o:發送方基板表面 2,2’,2’’:組件 2o:組件表面 3:黏合劑區域 4,4’:傳遞基板 5:框架 6:結合構件 7:去結合構件 8:接收方基板 9:發光二極體(LED) 9’:第二白光LED 10:固定元件 10o:固定元件表面 11:固定模具/傳遞模具 12:變形元件
本發明之進一步優點、特徵及細節自實施例之較佳實例之以下描述且藉助於附圖而得出。在附圖中，示意性地：
圖1a展示根據本發明之一闡釋性方法之一第一程序步驟，
圖1b展示一第二程序步驟，
圖1c展示一第三程序步驟，
圖1d展示一第四程序步驟，
圖1e展示一第五程序步驟，
圖1f展示一第六程序步驟，
圖2展示根據本發明之一滿載接收方基板，
圖3a展示在一第一位置中具有一傳遞模具之一傳遞基板，
圖3b展示處於一第二位置中之一傳遞模具，
圖3c展示處於一第三位置中之一傳遞模具，
圖4展示根據本發明之一第一白光二極體(wLED)，
圖5展示根據本發明之一第二白光二極體(wLED)。
在附圖中，相同組件或具有相同功能之組件由相同元件符號表示。
附圖未按比例繪製。特定而言，為了圖解起見，黏合劑區域3被表示為加粗。黏合劑區域3之擴大表示之原因在於以下事實：使用製造且再次釋放黏合劑區域3之結合構件6及去結合構件7係本發明之一基本特徵。若可見地表示黏合劑區域3，則特別是在接觸黏合劑區域3之組件之間存在黏合。若未表示黏合劑區域3，則此一黏合不存在或如此小以至於其在技術上可被忽視之一程度。在一特定位置處未展示一黏合劑區域3並不意謂一結合劑(例如一黏合劑)必須不再定位於此位置處。此僅僅意謂結合劑、特別是黏合劑不具有黏合效應且至少係一可忽略不計的黏合效應、特別是因為黏合效應已被改變，特別是藉由一去結合構件7被減小或甚至被完全移除。
1:發送方基板
1o:發送方基板表面
2:組件
3:黏合劑區域

Claims (15)

  1. 一種用於藉由至少以下步驟、特別是藉由以下順序將組件(2、2’、2’’)自一發送方基板(1)傳遞至一接收方基板(8)之方法： i)      在該發送方基板(1)上設置及/或製造該等組件(2、2’、2’’)， ii)     將該發送方基板(1)之該等組件(2、2’、2’’)傳遞至傳遞基板(4、4’)， iii)    將該等組件(2、2’、2’’)自該傳遞基板(4、4’)傳遞至該接收方基板(8)， 其中可憑藉結合構件(6)及/或去結合構件(7)選擇性地傳遞該等組件(2、2’、2’’)。
  2. 如請求項1之方法，其中在步驟ii)及/或步驟iii)中之該傳遞期間，藉由該結合構件(6)、特別是藉由雷射輻射固定、局部地限制個別組件(2、2’、2’’)或複數個組件(2、2’、2’’)。
  3. 如請求項1或2之方法，其中在步驟ii)及/或步驟iii)中之該傳遞期間，藉由該去結合構件(7)釋放、局部地限制個別組件(2、2’、2’’)或複數個組件(2、2’、2’’)。
  4. 如請求項1或2之方法，其中為了進行選擇，藉由一測試、特別是電測試對該等組件(2、2’、2’’)進行至少一次功能性測試。
  5. 如請求項1或2之方法，其中在步驟ii)中之該傳遞期間，該傳遞基板(4、4’)接觸及/或將壓力施加至設置於該發送方基板(1)上之該等組件(2、2’、2’’)，使得將該等組件(2、2’、2’’)保持於該發送方基板(1)與該傳遞基板(4、4’)之間的一特定位置中。
  6. 如請求項1或2之方法，其中在步驟iii)中之該傳遞期間，配置於該傳遞基板(4、4’)上之該等組件(2、2’、2’’)接觸及/或將壓力施加至該接收方基板(8)，使得將該等組件(2、2’、2’’)固持於該傳遞基板(4、4’)與該接收方基板(8)之間。
  7. 如請求項1或2之方法，其中分別在該發送方基板(1)及/或該傳遞基板(4、4’)及/或該接收方基板(8)及/或該等組件(2、2’、2’’)上施加一釋放層及/或一黏合層，該等層特別是透過該去結合構件(7)及/或該結合構件(6)之作用，改變其等在一黏合劑區域(3)中相對於該等組件(2、2’、2’’)之黏合性質。
  8. 如請求項1或2之方法，其中該發送方基板(1)及/或該傳遞基板(4、4’)及/或該接收方基板(8)經設計成可被雷射輻射穿透。
  9. 如請求項1或2之方法，其中該傳遞基板(4、4’)包括固定元件(10)，該等固定元件(10)在該傳遞期間特別是藉由表面黏合固定該等組件(2、2’、2’’)。
  10. 如請求項1或2之方法，其中該等固定元件(10)由一聚合物材料製成及/或經設計成類似於一吸盤。
  11. 如請求項10之方法，其中在該傳遞期間藉由構件、特別是機械及/或氣動構件使該傳遞基板(4、4’)變形，使得特別是自該等固定元件(10)釋放該等組件(2、2’、2’’)及/或藉由該等固定元件(10)以在空間及/或時間上偏移之一方式固定該等組件(2、2’、2’’)。
  12. 如請求項1或2之方法，其中該傳遞基板(4、4’)係一膜、特別是彈性膜。
  13. 一種使用如請求項1至12中至少一項之方法傳遞組件(2、2’、2’’)之裝置，其中可在一發送方基板(1)上製造及/或設置組件(2、2’、2’’)，且其中可將該發送方基板(1)之該等組件(2、2’、2’’)傳遞至一傳遞基板(4、4’)，且其中可將該等組件(2、2’、2’’)自該傳遞基板(4、4’)傳遞至該接收方基板(8)，且其中可藉由結合構件(6)及/或去結合構件(7)選擇性地實行該等組件(2、2’、2’’)至該傳遞基板及/或該接收方基板之該傳遞。
  14. 一種發光二極體(LED)(9)，其藉由如請求項1至12中任一項之方法來製造。
  15. 如請求項14之發光二極體(9)，其中該發光二極體(9)由彼此上下及/或彼此並排配置之複數個組件(2、2’、2’’)組成，特別是由不同發送方基板(1)提供。
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