JP6990577B2 - 実装方法および実装装置 - Google Patents
実装方法および実装装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 167
- 239000000853 adhesive Substances 0.000 claims description 123
- 230000001070 adhesive effect Effects 0.000 claims description 123
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 85
- 239000000758 substrate Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000002313 adhesive film Substances 0.000 description 14
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001141 propulsive effect Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- H01L33/005—Processes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
- Led Device Packages (AREA)
Description
2 キャリア基板
3a 粘着膜
3b 粘着膜
4a 第1の粘着シート
4b 第2の粘着シート
5 転写層
6 回路基板
10 レーザ転写部
11 レーザ光
12 レーザ照射部
13 転写基板保持部
14 被転写基板保持部
20 粘着シート載置部
21 第1の粘着シート載置部
22 第2の粘着シート載置部
23 ヒータ
30 実装部
31 載置台
32 ヘッド
33 2視野光学系
34 ヒータ
35 ヒータ
40 ロボットハンド
100 実装装置
Claims (6)
- キャリア基板に第1の面を保持されたダイシング後の半導体チップを回路基板に実装する実装方法であって、
前記半導体チップの前記第1の面と反対側の面である第2の面側に第1の粘着シートを準備し、前記キャリア基板を透過させて前記半導体チップの前記第1の面にレーザを照射することにより、前記半導体チップが前記キャリア基板から剥離して前記第1の粘着シートに貼付けられるように前記半導体チップを前記第1の粘着シートへ転写させる第1の転写工程と、
前記半導体チップの前記第1の面側に第2の粘着シートを準備し、前記第1の粘着シートを透過させて前記半導体チップの前記第2の面にレーザを照射することにより、前記半導体チップが前記第1の粘着シートから剥離して前記第2の粘着シートに貼付けられるように前記半導体チップを前記第2の粘着シートへ転写させる第2の転写工程と、
ヘッドが前記第2の粘着シートの前記半導体チップが転写されていない側の面を保持し、当該ヘッドを介して前記半導体チップと前記回路基板とを熱圧着させることにより前記半導体チップを前記回路基板に実装する実装工程と、
を順次実行することを特徴とする実装方法。 - 前記第1の転写工程と前記第2の転写工程との間に、前記第1の粘着シートの粘着力を低減させる粘着力低減工程を有することを特徴とする、請求項1に記載の実装方法。
- 前記粘着力低減工程は、前記第1の粘着シート及び前記半導体チップを加熱することにより粘着力を低減させることを特徴とする、請求項2に記載の実装方法。
- 前記ヘッドの前記第2の粘着シートと接触する面の熱膨張係数、前記第2の粘着シートの熱膨張係数、および前記回路基板の前記半導体チップが実装される面の熱膨張係数は同等であり、前記実装工程では、前記第2の粘着シートの温度と前記回路基板の前記半導体チップが転写される面の温度が常に等しくなるように温度制御することを特徴とする、請求項1から3のいずれかに記載の実装方法。
- 前記ヘッドの前記第2の粘着シートと接触する面の材料、前記第2の粘着シートの材料、および前記回路基板の前記半導体チップが実装される面の材料は同一であることを特徴とする、請求項4に記載の実装方法。
- キャリア基板に第1の面を保持されたダイシング後の半導体チップを載置台に載置された回路基板に実装する実装装置であって、
前記半導体チップの前記第1の面と反対側の面である第2の面を貼付ける第1の粘着シートを保持する第1の粘着シート保持部と、
前記半導体チップの前記第1の面を受ける第2の粘着シートを保持する第2の粘着シート保持部と、
レーザを照射するレーザ照射部と、
前記半導体チップが保持された前記第2の粘着シートを保持し、載置台に載置された前記回路基板に対して前記半導体チップを加圧および加熱することが可能なヘッドと、
を有することを特徴とする、実装装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017246966A JP6990577B2 (ja) | 2017-12-22 | 2017-12-22 | 実装方法および実装装置 |
PCT/JP2018/042178 WO2019123901A1 (ja) | 2017-12-22 | 2018-11-14 | 実装方法および実装装置 |
CN201880082929.XA CN111512423B (zh) | 2017-12-22 | 2018-11-14 | 安装方法和安装装置 |
KR1020207017341A KR102614211B1 (ko) | 2017-12-22 | 2018-11-14 | 실장 방법 및 실장 장치 |
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JP2017246966A JP6990577B2 (ja) | 2017-12-22 | 2017-12-22 | 実装方法および実装装置 |
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JP2019114660A JP2019114660A (ja) | 2019-07-11 |
JP6990577B2 true JP6990577B2 (ja) | 2022-01-12 |
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JP (1) | JP6990577B2 (ja) |
KR (1) | KR102614211B1 (ja) |
CN (1) | CN111512423B (ja) |
WO (1) | WO2019123901A1 (ja) |
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JP2023507966A (ja) * | 2019-12-17 | 2023-02-28 | キューリック・アンド・ソファ・ネザーランズ・ベーフェー | 個別構成要素を受け入れるための接着テープ |
WO2022209079A1 (ja) * | 2021-03-30 | 2022-10-06 | 東レエンジニアリング株式会社 | 被転写基板および転写装置 |
WO2023062671A1 (ja) * | 2021-10-11 | 2023-04-20 | 株式会社レゾナック | 電子部品装置の製造方法、電子部品の実装方法及び緩衝シート |
KR102537573B1 (ko) * | 2023-01-27 | 2023-05-30 | 주식회사 엠아이이큅먼트코리아 | 플립 칩 레이저 본딩장치의 본딩 툴 |
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- 2018-11-14 KR KR1020207017341A patent/KR102614211B1/ko active IP Right Grant
- 2018-11-14 CN CN201880082929.XA patent/CN111512423B/zh active Active
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WO2019123901A1 (ja) | 2019-06-27 |
CN111512423B (zh) | 2023-05-12 |
CN111512423A (zh) | 2020-08-07 |
KR102614211B1 (ko) | 2023-12-14 |
KR20200097278A (ko) | 2020-08-18 |
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