TW202131422A - 半導體裝置與形成嵌入式晶粒基板的方法以及具有其之系統級封裝模組 - Google Patents

半導體裝置與形成嵌入式晶粒基板的方法以及具有其之系統級封裝模組 Download PDF

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TW202131422A
TW202131422A TW110104032A TW110104032A TW202131422A TW 202131422 A TW202131422 A TW 202131422A TW 110104032 A TW110104032 A TW 110104032A TW 110104032 A TW110104032 A TW 110104032A TW 202131422 A TW202131422 A TW 202131422A
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substrate
semiconductor
module
conductive
sip
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TW110104032A
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TWI786534B (zh
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梁悳景
李勳擇
金成洙
李喜秀
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新加坡商星科金朋有限公司
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Abstract

一種半導體裝置係具有一第一基板。一第一半導體構件係被設置在該第一基板的一第一表面上。一第二基板係包含一在該第二基板的一第一表面上的垂直的互連結構。一第二半導體構件係被設置在該第二基板的該第一表面上。該第一半導體構件或第二半導體構件是一半導體封裝。該第一基板係被設置在該第二基板之上，其中該第一半導體構件以及第二半導體構件是在該第一基板以及第二基板之間。一第一密封劑係被沉積在該第一基板以及第二基板之間。一系統級封裝子模組係相對該密封劑而被設置在該第一基板或是第二基板之上。一屏蔽層係被形成在該系統級封裝子模組之上。

Description

半導體裝置與形成嵌入式晶粒基板的方法以及具有其之系統級封裝模組
本發明係大致有關於半導體裝置，並且更具體而言係有關於一種形成一嵌入式晶粒基板(EDS)的半導體裝置與方法、以及具有該EDS的系統級封裝(SiP)模組。
半導體裝置係常見於現代的電子產品中。半導體裝置係執行廣範圍的功能，例如是信號處理、高速的計算、發送及接收電磁信號、控制電子裝置、光電的發電、以及產生用於電視顯示器的視覺的影像。半導體裝置係見於通訊、電力轉換、網路、電腦、娛樂、以及消費者產品的領域中。半導體裝置亦見於軍事的應用、航空、汽車、工業用控制器、以及辦公室設備中。
半導體封裝通常是在數個主動半導體構件、離散的被動構件、以及整合的被動裝置(IPD)一起被封裝成為單一封裝的系統(亦以系統級封裝(SiP)模組著稱)之下加以做成的。相較於傳統的半導體封裝，SiP模組係提供更高密度以及強化的電性功能。
該些主動及被動構件係被安裝到一用於結構的支撐及電互連的基板。在更先進的三維的(3D)封裝中，半導體構件係被嵌入到該基板之中，其有時被稱為嵌入式晶粒基板(EDS)。在EDS封裝下，一半導體晶粒係在基板的形成期間被嵌入在複數個疊層的層之內。該半導體晶粒係接著透過該基板的導電貫孔及導電線路，來電連接至在該基板的頂表面及底表面上的構件。
EDS的製造係需要一基板在一半導體晶粒周圍的形成，此係限制可利用於該基板的選項。此外，在該基板中的製造缺陷不僅導致該基板的損失，而且也導致一原本良好的半導體晶粒的損失。傳統的EDS封裝係具有低良率、高成本、高度翹曲、以及低度設計彈性的額外的問題。因此，對於一種在基板設計及構件選擇上提供更高的彈性以及增高的製造良率的EDS以及製造其之方法係存在著需求。
根據本發明之一個態樣，其提供一種製造半導體裝置之方法，其係包括：提供一第一基板；在該第一基板的一第一表面上設置一第一半導體構件；提供一第二基板，其係在該第二基板的一第一表面上包含一垂直的互連結構；在該第二基板的該第一表面上設置一第二半導體構件；在該第二基板之上設置該第一基板，其中該第一半導體構件以及第二半導體構件係在該第一基板以及第二基板之間；以及在該第一基板以及第二基板之間沉積一第一密封劑。
根據本發明之一個態樣，其提供一種製造半導體裝置之方法，其係包括：提供一第一基板；提供一第二基板；在該第一基板以及第二基板之間設置一第一半導體構件；以及在該第一基板以及第二基板之間沉積一第一密封劑。
根據本發明之一個態樣，其提供一種半導體裝置，其係包括：一第一基板；一第二基板；一第一半導體構件，其係被設置在該第一基板以及第二基板之間；以及一密封劑，其係被沉積在該第一基板以及第二基板之間。
本發明係在以下參考該些圖式的說明中以一或多個實施例來加以描述，其中相同的元件符號係代表相同或類似的元件。儘管本發明係以用於達成本發明的目的之最佳模式來加以描述，但熟習此項技術者將會體認到的是，本發明係欲涵蓋如同可內含在藉由以下的揭露內容及圖式支持的所附的申請專利範圍及其等同項所界定的本發明的精神與範疇之內的替代、修改及等同物。
如同在此所用的術語"半導體晶粒"係指該字詞的單數形及複數形兩者，因而於是可以指稱單一半導體裝置以及多個半導體裝置兩者。如同在此所用的術語"半導體構件"係指由半導體晶粒所形成的主動裝置、以及其它可用於一半導體電路的主動或被動構件兩者。
半導體裝置一般是利用兩個複雜的製程：前端製造以及後端製造來加以製造的。前端製造係牽涉到複數個晶粒在一半導體晶圓的表面上的形成。在該晶圓上的每一個晶粒係包含主動及被動電性構件，該些電性構件係被電連接以形成功能電路。例如是電晶體及二極體的主動電性構件係有能力來控制電流的流動。例如是電容器、電感器及電阻器的被動電性構件係產生執行電路功能所必要的一種在電壓及電流之間的關係。
後端製造係指切割或單粒化該完成的晶圓成為個別的半導體晶粒，並且為了結構的支撐、電互連以及環境的隔離來封裝該些半導體晶粒。為了單粒化該些半導體晶粒，該晶圓係被劃線並且沿著該晶圓的稱為切割道或劃線的非功能區域來加以斷開。該晶圓係利用一雷射切割工具或鋸刀來加以單粒化。在單粒化之後，該些個別的半導體晶粒係被安裝到一封裝基板，該封裝基板係包含用於與其它系統構件互連的接腳或接點墊。在該半導體晶粒之上所形成的接點墊係接著連接至在該封裝之內的接點墊。該些電連接可以利用導電層、凸塊、柱形凸塊、導電膏、或是引線接合來加以做成。一密封劑(encapsulant)或其它模製材料係沉積在該封裝之上，以提供實體支撐及電性隔離。該完成的封裝係接著被插入一電性系統中，並且該半導體裝置的功能係被做成可供其它系統構件利用的。
圖1a係展示一半導體晶圓100，其係具有一種基底基板材料102，例如是矽、鍺、磷化鋁、砷化鋁、砷化鎵、氮化鎵、磷化銦、碳化矽、或是其它用於結構的支撐的基體材料。複數個半導體晶粒或構件104係被形成在晶圓100上，其係藉由一非主動的晶粒間的晶圓區域或切割道106來加以分開。切割道106係提供切割區域，以將半導體晶圓100單粒化成為個別的半導體晶粒104。在一實施例中，半導體晶圓100係具有一100-450毫米(mm)的寬度或直徑。
圖1b係展示半導體晶圓100的一部分的一橫截面圖。每一個半導體晶粒104係具有一背表面或非主動表面108以及一包含類比或數位電路的主動表面110，該些類比或數位電路係被實施為主動裝置、被動裝置、導電層、以及介電層，其係根據該晶粒的電性設計及功能而被形成在該晶粒之內並且電性互連的。該電路可包含一或多個被形成在主動表面110之內的電晶體、二極體、以及其它電路元件以實施類比電路或數位電路，例如是一數位信號處理器(DSP)、特殊應用積體電路(ASIC)、記憶體、或是其它信號處理電路。半導體晶粒104亦可包含例如是電感器、電容器及電阻器的IPD，其係被形成在該半導體晶粒的表面之上的互連層中或是互連層上，以用於RF信號處理。在某些實施例中，半導體晶粒104係包含多個主動表面，而電路係被形成於其中或是其上。
一導電層112係利用PVD、CVD、電解的電鍍、無電的電鍍、或是其它適當的金屬沉積製程而被形成在主動表面110之上。導電層112可以是一或多層的鋁(Al)、銅(Cu)、錫(Sn)、鎳(Ni)、金(Au)、銀(Ag)、或是其它適當的導電材料。導電層112係運作為電連接至主動表面110的電路的接點墊。
一種導電凸塊材料係利用一蒸鍍、電解的電鍍、無電的電鍍、球式滴落、或是網版印刷製程而沉積在導電層112之上。該凸塊材料可以是具有一選配的助熔溶劑的Al、Sn、Ni、Au、Ag、鉛(Pb)、鉍(Bi)、Cu、焊料、以及其之組合。例如，該凸塊材料可以是共晶Sn/Pb、高鉛的焊料、或是無鉛的焊料。該凸塊材料係利用一適當的附接或接合製程而被接合到導電層112。在某些實施例中，該凸塊材料係藉由加熱該材料超過其熔點來加以回焊，以形成球體或凸塊114。在一實施例中，凸塊114係被形成在一凸塊下金屬化(UBM)之上，該UBM係具有一潤濕層、一阻障層、以及一黏著層。凸塊114亦可被壓縮接合或是熱壓接合到導電層112。凸塊114係係代表一種可被形成在導電層112之上的互連結構的類型。該互連結構亦可以使用接合線、導電膏、柱形凸塊、微凸塊、或是其它的電互連。
在圖1c中，半導體晶圓100係利用一鋸刀或雷射切割工具118，透過切割道106而被單粒化成為個別的半導體晶粒104。該些個別的半導體晶粒104可以在單粒化之前或是之後加以檢查及電性測試，以用於已知良好的晶粒(KGD)的識別。
圖2a-2b係描繪一種形成用於組合成為一基板的一面板的頂端基板子模組的製程，其中半導體晶粒104係內嵌在該基板中。圖2a係展示基板150的一橫截面圖，其係包含複數個藉由切割道152分開的用於頂端基板子模組151的形成的區域。儘管只有兩個用於形成子模組151的區域係被展示，但是基板150在其它實施例中是大許多的，其係具有空間以平行地形成數百個或是數千個子模組151。基板150係由一種基底絕緣材料153所形成的，其中導電層154及156係被形成在該絕緣層的兩個主要的表面上。在一實施例中，絕緣材料153是一模製的基板。在某些實施例中，基板150是利用和複數個導電層交錯的複數個絕緣層153來加以形成的，其係容許有更複雜的信號繞線。導電層154及156的部分係根據正被形成的SiP模組的設計及功能而為電性共通或是電性隔離的。
導電層154及156可以是一或多層的Al、Cu、Sn、Ni、Au、Ag、或是其它適當的導電材料。導電貫孔158係延伸穿過絕緣層153，以電連接導電層154的部分至導電層156的部分。導電層154及156係提供橫跨基板150的水平的電互連，而導電貫孔158係提供穿過基板150的垂直的電互連。在一實施例中，導電貫孔158係藉由蝕刻、鑽孔、雷射剝蝕、或是其它適當的製程來設置一穿過絕緣層153的開口，並且接著沉積或電鍍導電材料到該開口中來加以形成的。在某些實施例中，用於導電貫孔174的導電材料係被沉積到絕緣層153的開口中，以作為形成導電層154或156的部分。
基板150亦可以是任何適當的積層中介體、PCB、晶圓形式、帶狀中介體、引線架、或是其它類型的基板。基板150可包含一或多個疊層的具有酚醛棉紙、環氧樹脂、樹脂、玻璃布、磨砂玻璃、聚酯、以及其它強化纖維或織物的一組合的聚四氟乙烯(PTFE)預先浸漬料(預浸料)、FR-4、FR-1、CEM-1、或是CEM-3的層。絕緣層153係包含一或多層的二氧化矽(SiO2)、矽氮化物(Si3N4)、氮氧化矽(SiON)、五氧化二鉭(Ta2O5)、鋁氧化物(Al2O3)、阻焊劑、聚醯亞胺、苯環丁烯(BCB)、聚苯並噁唑(PBO)、以及其它具有類似絕緣及結構的性質之材料。基板150亦可以是一包含一主動表面的多層的撓性的積層、陶瓷、銅箔基板、玻璃、或是半導體晶圓，該主動表面係包含一或多個電晶體、二極體、以及其它電路元件以實施類比或數位電路。
頂端基板子模組151可以在該些基板子模組上安裝半導體晶粒以及其它構件之前，在見於圖2a中的目前的階段加以測試。在圖2b中，半導體晶粒104以及離散的裝置160及162係被表面安裝到導電層154之上。半導體晶粒104可以在安裝到一頂端基板子模組151上之前先被測試是否為KGD，以避免在良好的基板子模組上利用不良的晶粒，而不必要地浪費子模組。此外，頂端基板子模組151可以在安裝構件之前先被測試，因而具有製造缺陷的子模組可被拋棄，而不在一不良的基板上浪費KGD。在某些實施例中，不良或空白的半導體晶粒104係被設置在不良的基板子模組151上，以保持橫跨基板150的重量分布均勻，並且有助於控制翹曲。
圖2b係展示每一個子模組151都具有兩個離散的裝置160及162，其可以是電感器、電容器、電阻器、或是其它被動電路構件。離散的裝置160及162亦可以是具有主動功能的裝置，例如是功率電晶體、瞬態電壓抑制二極體、等等。在其它實施例中，主動及被動裝置的任意組合都可以根據需要而被設置在基板150上，以實施一最終的SiP模組的所要的功能。在一實施例中，離散的裝置160及162實施一帶通濾波器或是其它的射頻(RF)信號處理網路。在另一實施例中，離散的裝置160及162係濾波一至半導體晶粒104的電源信號。離散的裝置160及162可以實施任何所要的電性功能。
離散的裝置160及162係透過焊料或焊料膏166來機械式地接合並且電連接至導電層154。在一實施例中，焊料膏166係被印刷到基板150之上，在離散的裝置160及162實體接觸下加以回焊，並且接著去焊劑。半導體晶粒104係透過導電凸塊114來機械式地接合並且電連接至導電層154。在某些實施例中，凸塊114以及焊料膏166係同時被回焊，以在單一步驟中表面安裝所有的構件。區域151a係指出其中主動及被動構件位在子模組151上所在的區域。
圖3a-3b係描繪形成底部基板子模組。該製程係開始於圖3a中，其中一基板200係具有位置以形成複數個藉由切割道202分開的底部基板子模組201。基板200係類似於基板150。基板200係包含一或多個絕緣層203以及在該基板的相反側上的導電層204及206。導電層204及206的部分係藉由穿過基板200的導電貫孔208來電連接至彼此。導電柱210係被形成在導電層204的接點墊上。導電柱210係藉由沉積一或多個層的Al、Cu、Sn、Ni、Au、Ag、或是其它適當的導電材料到一遮罩層的開口中來加以形成。在其它實施例中，導電柱210係藉由其它適當的金屬沉積技術來加以形成。非常像頂端基板子模組151，底部基板子模組201可以在安裝構件之前先被測試，並且該些構件也可以在安裝之前先被測試。
在圖3b中，半導體晶粒104以及離散的裝置160-162係被表面安裝到基板200之上，並且藉由焊料膏166及導電凸塊114來電連接至導電層204。該些底部基板子模組201的半導體晶粒104以及離散的裝置160-162可以是與頂端基板子模組151相同或是不同的。在一實施例中，用於基板150及200兩者的半導體晶粒104是相同的記憶體晶片，並且和在一之後的步驟所設置的一微處理器一起加以利用。在另一實施例中，在基板150或200上的一半導體晶粒104是一記憶體晶片，而另一個半導體晶粒104是一微處理器。區域201a係指出其中主動及被動構件位在子模組201上所在的區域。
圖4a-4c係描繪組合基板子模組151及201成為一嵌入式晶粒基板(EDS)。在圖4a中，具有頂端基板子模組151的基板150係被翻轉且設置在具有底部基板子模組201的基板200之上。在某些實施例中，基板150、基板200、或是兩者都可以在該些頂端及底部基板子模組的組合之前先被單粒化。在頂端基板子模組151以及底部基板子模組201上的構件係分別被限制於區域151a及201a之內。區域151a及201a的佈局係被設計成使得當頂端基板子模組151被翻轉及安裝在底部基板子模組201之上時，該些構件並不彼此干擾。換言之，當該些基板子模組中之一被翻轉並且與另一子模組對準時，兩個子模組的全部的構件都是在彼此的構件的覆蓋區之外。如同在圖4a中所定向的，子模組151只有在該些子模組的右半邊上包含構件，而子模組201只有在左半邊上包含構件。其它的佈局也是可行的，如同以下參考圖6a-6d所解說者。
儘管圖4a係描繪將基板150堆疊在基板200之上，但基板200在其它實施例中亦可以是在上面的。在一實施例中，該底部基板150或200係被設置在一用於實體支撐的載體上，該載體係具有選配的雙面帶、熱釋放層、UV釋放層、或是其它適當的介面層。在某些實施例中，該頂端基板150或200係在被設置於該底部基板150或200上之前先被單粒化。
圖4b係展示頂端子模組151被設置到底部子模組201之上。在頂端子模組151上的半導體晶粒104以及離散的裝置160-162係延伸在底部子模組201上的半導體晶粒以及離散的裝置的一高度之內，而在該頂端及底部構件之間並無接觸。保持頂端及底部構件在彼此的覆蓋區之外係容許一較薄的基板的形成，因為頂端及底部基板構件可以佔用相同的垂直的區域。然而，在其中該些設計參數容許的實施例中，頂端子模組151以及底部子模組201的一部分或是所有的構件在最終的裝置中可以是直接在彼此之上的。
在圖4b中，一密封劑或模製化合物220係利用一種膏印刷、壓縮模製、轉移模製、液體密封劑模製、真空疊層、旋轉塗覆、或是其它適當的塗布器，而被沉積在基板150以及200之間、以及在半導體晶粒104與離散的裝置160-162之上。密封劑220可以是聚合物複合材料，例如是具有或不具有填充物的環氧樹脂、環氧丙烯酸酯、或是聚合物。密封劑220是非導電的，提供結構的支撐，並且在環境上保護該半導體裝置免於外部的元素及污染物。密封劑220係流動在導電凸塊114之間的半導體晶粒104之下、以及在焊料膏166之間的離散的裝置160-162之下，以完全地填入在基板150及200之間的空間。基板150及200以及密封劑220係形成一面板224。
在圖4c中，面板224係穿過基板150、基板200、以及密封劑220而被單粒化成為複數個嵌入式晶粒基板(EDS)230。圖5是描繪一完成的EDS 230。在某些實施例中，面板224是在一之後的製造階段之前並未被單粒化為個別的EDS 230，尤其是當如同在以下的各種實施例中所示的額外的構件被安裝到基板150或200之上時。離散的裝置160及162係藉由導電層154、156、204及206來電耦接至同一個基板150或200的半導體晶粒104。一基板的半導體晶粒104以及離散的裝置160-162係透過柱210來電連接至在相對的基板上的構件。離散的裝置160-162係電連接至半導體晶粒104以提供所要的被動功能。在圖5中的EDS 230係構成一半導體封裝。基板150或基板200都可以與密封劑220相對地形成凸塊，並且接著EDS 230係利用該些凸塊來安裝到一電子裝置的一印刷電路板(PCB)或是其它基板。額外的主動或被動裝置可被安裝在該相對的基板的頂端之上，並且在該最終的電子裝置中被封入或是保持露出的。
EDS 230係藉由將構件設置在兩個分開的基板上、在該些構件介於該些基板之間下將該些基板設置在彼此上、並且接著在該兩個基板之間沉積一密封劑以覆蓋該些構件來加以形成。形成EDS 230的方法係容許該基板及構件的撓性的設計，增高良率，降低成本，並且有助於在製造期間控制翹曲。基板子模組151及201可以在安裝半導體晶粒104之前先被測試，此係降低被浪費掉的晶粒數目。
在基板150及200上的構件係被形成、安裝、或是設置在該些基板被組合以做成EDS 230時的在彼此的一覆蓋區之外的區域內。在以上的實施例中，在基板200上的構件係被形成在該裝置的一半部上，其係在圖6a中被展示為基板200a的區域201a。在基板150上的構件係被形成在該裝置的另一半部中，其係在圖6a中被展示為基板150a的區域151a。圖6a-6d係描繪基板150及200當從EDS 230的頂端觀看時的不同的實施例，即如同藉由在圖5中的線6a-6d所指出者。當基板150a及200a被堆疊時，該些區域151a及201a並不重疊。在基板150及200上的構件可以位在相同的垂直高度之內，因為該些構件是在不同的水平位置。在基板150及200上的每一個構件可以最多佔用到在基板150及200之間的整個高度，因為相對的基板並沒有干擾的構件。在該兩個基板上具有此種未重疊的構件係容許在該些基板上有較高的構件，且/或容許該些基板能夠在較短的柱210之下較靠近彼此地加以安裝。
在基板150及200上的構件可以用任何所要的佈局來加以設置，並且在基板150及200上的佈局並不需要是對稱的。圖6b係描繪基板200b的區域201b是顯著大於基板150b的區域151b。在圖6b的實施例中，相較於基板150b的區域151b，較多的構件、具有較大覆蓋區的構件、或是兩者係被設置在區域201b之內的基板200b上。然而，該些區域151b及201b係保持未重疊的，因而相對的基板的構件仍然並不干擾到彼此。
圖6c係展示基板200c的區域201c以及基板150c的區域151c為彼此並不重疊的匹配的非矩形的形狀。在圖6d中，區域201d及151d是不連續的區域。構件可以用任何所要的圖案而被設置在基板150及200上。在某些實施例中，該些相對的基板的一些構件係重疊，而其它的構件是未重疊的。譬如，較短的構件可以被置放在連接至其個別的基板150及200的彼此的頂端上，而其它較高的構件係被設置在其中該些相對的基板沒有構件的位置中。在一實施例中，半導體晶粒104係被背面研磨至一高度是小於在基板150及200之間的距離的一半，因而兩個半導體晶粒當對準時都將會是可容納在該些基板之間而在彼此的頂端上。該些基板的每一個係包含在該半導體晶粒周圍的離散的構件，該些離散的構件係顯著地高於該晶粒，並且因此被設置在該半導體晶粒周圍的非重疊的區域中。
圖7a-7c係描繪用於該些垂直的互連結構的選項，其係電連接基板150至基板200以作為導電柱210的替代方案。圖7a係展示EDS 234，其中導電凸塊236係被安裝到基板200的導電層204之上以取代導電柱210。導電凸塊236係被回焊或是熱壓接合以將該些凸塊附接至導電層204。基板150係被設置在該些凸塊之上。該些凸塊係被回焊到導電層154之上，以實體及電性連接基板150至基板200。在其它實施例中，凸塊236係被熱壓接合到基板150。凸塊236係類似於凸塊114。
圖7b係描繪EDS 238，其中導電柱210係被銅核焊料球(CCSB)240-242所取代。CCSB係利用一用焊料242來塗覆的銅核240來加以形成的。焊料242在某些實施例中係被電鍍到銅核240之上。在一實施例中，一層鎳係被電鍍在焊料242以及銅核240之間。CCSB 240-242係類似於導電凸塊236而被使用。CCSB提供對於電遷移(electromigration)的改善的抵抗，其係提供一更堅固的凸塊以在基板150及200之間維持一偏置，並且在該些基板之間增加導熱度。
圖7c係描繪EDS 244，其係利用e-Bar或PCB單元246以用於在基板150及200之間的電互連。PCB單元246包含一核心基板247，其係具有被形成穿過該核心基板的導電貫孔248。在某些實施例中，接點墊係被形成在PCB單元246的頂表面及底表面上。焊料遮罩層可被利用在該接點墊之上。在某些實施例中，PCB單元246係利用在貫孔248以及導電層204之間的焊料或是焊料膏而被安裝到基板200之上。額外的焊料或是焊料膏可被用來連接基板150至貫孔248。在某些實施例中，每一個PCB單元246係延伸在面板224中的兩個相鄰的裝置230之間，並且在圖4c中的單粒化該面板係切穿該些PCB單元。先前所述或是後續的實施例的任一個都可以利用凸塊236、CCSB 240-242、或是PCB單元246來加以形成，以取代導電柱210。
圖8a-8d係描繪一種形成一面板的頂端SiP子模組的製程，以用於和EDS 230組合成為一種系統級封裝(SiP)模組。圖8a係展示基板250的一橫截面圖，其係包含複數個藉由切割道252分開的用於頂端SiP子模組251的形成的區域。儘管只有兩個用於形成頂端SiP子模組251的區域係被展示，但是基板250在其它實施例中是大許多的，其係具有空間以平行地形成數百個或是數千個頂端SiP子模組251。基板250係由一基底絕緣材料253來加以形成的，其中導電層254及256係被形成在該絕緣層的兩個主要的表面上。基板250係實質類似於以上的基板150及200的說明，儘管某些特徵在該些基板之間可能是不同的。
在圖8b中，離散的裝置260、262及264係被表面安裝到導電層254之上。圖8b係展示電感器260、電阻器262、以及電容器264被安裝到基板250之上，但是主動及被動裝置的任意組合都可以根據需要而被設置，以實施一SiP模組的所要的功能。在一實施例中，離散的裝置260-264係實施一帶通濾波器、或是其它的RF信號處理網路。離散的裝置260-264係透過焊料或是焊料膏266來機械式地接合並且電連接至導電層254。在一實施例中，焊料膏266係被印刷到基板250之上，在離散的裝置260-264處於實體接觸下加以回焊，並且接著去焊劑。
在圖8c中，一密封劑或模製化合物270係沉積在離散的裝置260-264以及基板250之上。密封劑270係類似於密封劑220。在某些實施例中，密封劑270係沉積到一厚度以完全地覆蓋離散的裝置260-264。在其它實施例中，被安裝在基板250之上的主動或被動構件可以藉由利用膜輔助的模製而保持從密封劑270露出的。
在圖8d中，密封劑270的一部分係選配地藉由研磨機272來加以移除，以露出或產生密封劑270的一新的背表面274。研磨機272係平坦化密封劑270以形成表面274。或者是，密封劑270係利用化學機械平坦化(CMP)、一蝕刻製程、或是雷射直接剝蝕(LDA)而被平坦化。在某些實施例中，研磨機272亦平坦化被設置在基板250上的某些主動或被動構件以及密封劑270。將密封劑270模製到一大於必要的厚度並且接著背面研磨係有助於控制面板翹曲。封入基板250以及離散的裝置260-264係產生一帶或面板280的頂端SiP子模組251。
圖9是描繪該些頂端SiP子模組251中之一被設置在EDS 230上以形成一SiP模組276。頂端SiP子模組251可以從面板280而被單粒化，並且被設置在經單粒化的EDS 230上。在一實施例中，經單粒化的頂端SiP子模組251係被設置在單粒化成為個別的EDS 230之前的面板224上。在另一實施例中，面板280係被設置在面板224上，並且兩個面板係在導電凸塊282被回焊以將該些面板實體及電性連接在一起之後一起被單粒化。導電凸塊282係被回焊在EDS 230以及頂端SiP子模組251之間，以用於在基板250以及基板150之間的機械式接合以及電互連。半導體晶粒104係透過導電層204、206、154、156、254及256、導電貫孔158、208及258、導電柱210、以及導電凸塊282來電連接至離散的裝置260-264。半導體晶粒104以及離散的裝置160、162、260、262及264係透過基板150、200及250、導電凸塊282、以及導電柱210來電耦接至導電凸塊284。
在其它實施例中，凸塊282係被熱壓接合的。熱壓接合可以個別地針對於每一個頂端SiP子模組251而產生、或是每一個頂端SiP子模組可以成群一次被熱壓被接合到面板224。凸塊282係類似於半導體晶粒104的凸塊114而被形成的。凸塊282可以在單粒化面板280成為頂端SiP子模組251之前或是之後被形成在基板250上、或是可被形成在基板150上。凸塊284係被形成在導電層206上。凸塊284係以一種類似凸塊114的方式而被施加。在某些實施例中，凸塊284係在面板224成為EDS 230的單粒化之前被形成在導電層206上。如同在圖19a-19b中所示，凸塊284係被用來將SiP模組276安裝到一電子裝置的一更大的基板。
圖10係描繪一替代實施例，其中導電凸塊282係被導電微柱290所取代。在一實施例中，微柱290係藉由電鍍銅或是其它適當的導電材料到導電層256的接點墊之上來加以形成。焊料蓋292係被電鍍到微柱290之上。在一實施例中，微柱290以及焊料蓋292係和彼此一起被沉積到共同的遮罩層開口內。一選配的非導電的膜(NCF)或是膏(NCP)294係被設置在基板150上，以助於焊料蓋292至導電層156的熱壓接合。焊料蓋292可以替代地在具有或是不具有NCP 294之下被回焊到導電層156之上。微柱290可被利用於以上或是以下所敘述的實施例的任一個，其中SiP子模組係被安裝至EDS 230的頂端或是底部。
圖11a-11f係描繪形成底部SiP子模組。該製程開始在圖11a中，其中一基板300係類似於基板150、200及250而具有位置以形成複數個藉由切割道302分開的底部SiP子模組301。基板300係包含一或多個絕緣層303以及在該基板的相對的側上的導電層304及306。導電層304及306的部分係藉由穿過基板300的導電貫孔308來電連接至彼此。導電柱310係被形成在導電層304的接點墊上。導電柱310係藉由沉積一或多層的Al、Cu、Sn、Ni、Au、Ag、或是其它適當的導電材料到一遮罩層的開口內來加以形成。在其它實施例中，導電柱310係藉由其它適當的金屬沉積技術來加以形成。在某些實施例中，導電凸塊236、CCSB 240-242、或是PCB單元246係被使用來取代導電柱310。
在圖11b中，半導體晶粒104以及離散的裝置312係藉由焊料膏314以及導電凸塊114而被表面安裝到基板300之上，並且電連接至導電層304。半導體晶粒104可以執行和EDS 230的半導體晶粒104相同的功能或是不同的功能。圖11c係展示一類似於密封劑220的密封劑320被沉積在基板300、導電柱310、半導體晶粒104、以及離散的裝置312之上。密封劑320係在圖11d中利用研磨機322來加以背面研磨。背面研磨面板330係產生密封劑320的一新的背表面324，其係與導電柱310的頂表面共平面的。在某些實施例中，半導體晶粒104係在相同的步驟中被露出或是進一步背面研磨。在一實施例中，一些密封劑係在背面研磨之後維持覆蓋導電柱310。
在圖11e中，導電柱310的側表面係從該密封劑藉由利用雷射331的LDA、或是其它適當的蝕刻製程而被露出，以在該些導電柱的周圍部分、或是完全圍繞該些導電柱地形成選配的缺口或溝槽332。每一個別的溝槽332可以用大致一圓圈來完全地延伸在一導電柱310的周圍。在一實施例中，密封劑320在溝槽332之內的一表面係在每一個導電柱的一整個周邊的周圍，從導電柱310大致線性地延伸至該密封劑的表面324。在其它實施例中，在溝槽332之內的密封劑320的表面係包含其它的輪廓形狀。在其中密封劑320在背面研磨之後仍然維持覆蓋導電柱310、或是沒有背面研磨被執行的實施例中，雷射331亦被用來露出該些導電柱的頂表面。
在圖11f中，面板330係利用鋸刀、雷射切割工具、或是水力切割工具336，穿過基板300以及密封劑320而被單粒化成為複數個底部SiP子模組301。該些個別的底部SiP子模組301的每一個係包含一半導體晶粒104、離散的裝置312、或是任何其它所要的電性構件的組合。
圖12係描繪一SiP模組340，其中頂端SiP子模組251以及底部SiP子模組301都被安裝到EDS 230。頂端SiP子模組251以及EDS 230係如上關於圖9及10所論述地加以組合。在一實施例中，底部SiP面板330、EDS面板224、以及頂端SiP面板280係在單粒化之前，利用在該頂端面板以及EDS面板之間的凸塊282、以及在該EDS面板以及底部面板之間的凸塊342來全部都加以堆疊。凸塊282及342係同時被回焊，以在該三個面板的任一個的單粒化之前機械式地並且電性連接所有三個面板。在其它實施例中，EDS面板224係在頂端SiP子模組251被附接之前或是之後加以翻轉。SiP子模組301係在面板330的單粒化之後被安裝到基板200之上、或是面板330可以整體地加以安裝。
凸塊344係被形成在柱310的露出的末端上，並且延伸到溝槽332中。凸塊344係以一種類似於凸塊114的方式而被施加。在某些實施例中，凸塊344係在面板330成為底部SiP子模組301的單粒化之前被形成在柱310上。凸塊344係提供一類似在圖9中的凸塊284的功能。凸塊344係被用來將SiP模組340安裝至一較大的電子裝置的一基板，因此將該SiP模組的功能納入到該電子裝置中。
圖13a-13c係描繪形成一SiP模組，其中頂端及底部SiP子模組係直接被形成在一EDS的基板上。在圖13a中，一頂端SiP面板350係根據在圖2b中的基板150來加以形成。如同在圖8a-8d中，離散的裝置260-264以及密封劑270係在圖13a中被設置，但其係被直接設置到基板150的導電層156之上，而不是在一個別的基板250上。在圖13b中，一底部SiP面板360係根據來自圖3b的基板200來加以形成。如同在圖11a-11f中，導電柱310、半導體晶粒104、離散的裝置312、密封劑320、以及導電凸塊344係被設置，但其係被直接設置到基板200的導電層206之上，而不是到一個別的基板300之上。在圖13c中，頂端SiP面板350及底部SiP面板360係被安裝在一起，其中基板150及200係如同在圖4a中的藉由導電柱210來加以連接。
密封劑220係被沉積在基板150及200之間，並且接著頂端SiP面板350及底部SiP面板360係被單粒化成為複數個如同在圖14a中所示的SiP模組370。SiP模組370係包含被安裝在基板150及200的頂表面以及底表面之上的半導體晶粒以及離散的構件的任意所要的組合。所有被安裝到基板150及200之上的構件都透過該些基板以及導電柱210及310來電連接至彼此以及電連接至凸塊344，以用於進一步的系統整合。圖14b係描繪從如同在圖13a中的頂端SiP面板350所形成的SiP模組380的一實施例，但是其中底部基板200係如同在圖3b中被使用。凸塊284係如同在圖9中地被設置在導電層206之上。
圖15a-15c係描繪分開封裝的半導體晶粒的使用，以從EDS 230形成SiP模組。圖15a係展示SiP模組390，其係類似於SiP模組340，但是其中半導體封裝392係取代該裸半導體晶粒104。半導體晶粒394係利用導電凸塊396而被形成凸塊，並且利用密封劑398而被封入以形成封裝392。在其它實施例中，其它類型的半導體封裝392係被安裝在基板300之上。半導體封裝392可包含用於該封裝的引線架或是基板。在各種的實施例中，在此揭露的半導體晶粒的任一種都可被具有任意封裝類型的經封裝的晶粒所取代。
圖15b係描繪兩個個別的底部SiP子模組400及410被設置在EDS 230的基板200上。底部SiP子模組400係類似於底部SiP子模組301，並且包含半導體晶粒104、離散的裝置312、以及導電柱310。底部SiP子模組410是一分開封裝的半導體晶粒412。半導體晶粒412係利用導電凸塊416而被設置在一基板414上，並且被模製在密封劑418之內。任何其它類型的半導體封裝都可以相鄰底部SiP子模組400而被安裝到基板200的導電層206，以作為底部SiP子模組410。底部SiP子模組410可包含其它類型的基板或引線架、或是可以如同在圖15a中的半導體封裝392，在無基板下加以形成。底部SiP子模組410可包含導電柱310、或是其它垂直的互連結構，以容許透過底部SiP子模組410來連接至如同在圖19a-19b中的一較大系統的一位在下面的基板。底部SiP子模組410亦可以納入底部SiP子模組400或301的離散的裝置以及任何其它的特點。
在圖15c中，SiP模組420係包含來自圖13a的頂端SiP面板350結合在圖3b中的基板200。頂端SiP面板350係被形成有延伸穿過密封劑170的導電柱422、以及在該些柱之上的導電凸塊424以用於後續的系統整合。一頂端SiP子模組426係包含被安裝在基板430之上的離散的裝置428以及半導體封裝431。半導體封裝431係類似於在圖15b中的半導體封裝410。如同所繪的，半導體封裝431係包含被安裝在基板432之上的半導體晶粒104、利用密封劑434而被模製、以及利用導電凸塊436而被安裝到基板430。其它的半導體封裝類型係在其它實施例中被利用。在圖15c中的半導體晶粒104可以都是相同的、或是具有不同的功能。
圖16a-16c係描繪形成一種EDS，其中該些內嵌的構件係在整合到該EDS之前先被模製。圖16a係描繪基板150，其中半導體晶粒104以及離散的裝置160及162係被安裝到該基板之上。半導體晶粒104以及離散的裝置160-162係在設置於基板150上之前，先被模製在密封劑中以形成一半導體封裝440。在一實施例中，用於複數個基板150或200的半導體晶粒104以及離散的裝置160-162係彼此相鄰地被設置在一載體上，並且被封入在該載體上以形成一面板的封裝440。導電凸塊114以及焊料166係直接被設置在該載體上，並且未完全地被密封劑覆蓋。該經封入的面板的半導體封裝440係被單粒化成為個別的封裝以使用於基板150或200。半導體封裝440係在凸塊114以及焊料166在導電層154上的情形下被設置在基板150上。
被設置在基板150或200上的構件的一部分可被封裝在一起，而其它離散的構件或半導體晶粒係被設置在該密封劑之外。為了說明之目的，圖16a係描繪在基板150上的每一個構件都被封入在封裝440中，而圖16b係描繪基板200，其中半導體晶粒104是在半導體封裝442之內，並且離散的裝置160-162是在該封裝之外。在一實施例中，相同的封裝配置係在兩個基板150及基板200上被利用。在其它實施例中，半導體晶粒、半導體封裝、以及其它構件的任意組合都可以被表面安裝到基板150及200之上。被使用在基板150及200上的半導體封裝係包含任意類型的半導體封裝，並且在某些實施例中係在該封裝之內包含基板或是引線架。
在圖16c中，基板150及200係如同在圖4a-4b中的面對面的堆疊並且被封入，以形成EDS 446。EDS 446可以如同在圖4c中地被單粒化、或是留下作為一較大的面板，直到額外的SiP模組構件被加入為止。
圖17a-17c係描繪用於具有在基板150及200之間的半導體封裝的SiP模組的電磁干擾(EMI)屏蔽的選項。圖17a係描繪具有半導體封裝440及442的EDS 450。半導體封裝442係包含被形成在該封裝之上的屏蔽層452。半導體封裝440係包含被形成在該封裝之上的屏蔽層454。在一實施例中，屏蔽層452及454係在封裝442及440的製造期間被施加。該面板的經封入的構件係穿過該密封劑而被單粒化，但是留在一載體上。單粒化係移除在該些相鄰的封裝的每一個之間的密封劑材料。導電材料係被電鍍在該些封裝的頂端之上，並且進入到在藉由單粒化所產生的封裝之間的空間中。電鍍係藉由CVD、PVD、無電的電鍍、或是其它適當的金屬沉積製程來加以執行。屏蔽層452及454係包含一或多層的Al、Cu、Sn、Ni、Au、Ag、或是其它適當的導電材料。該些裝置係在安裝於基板150及200上之前，先穿過其屏蔽層而被單粒化以最後分開該些裝置的每一個。在其它實施例中，封裝440及442係在安裝到基板150及200之上後，藉由在該些基板的其它區域之上利用一遮罩層而被電鍍有屏蔽層452及454。
屏蔽層452及454係分別覆蓋封裝442及440的頂表面以及側表面。在某些實施例中，屏蔽層452及454係電連接至該些基板的導電層以提供電性接地。屏蔽層452及454可被施加在利用有基板150及200的任何適當類型的半導體封裝之上。屏蔽層452及454係利用任何適當的用於在一半導體封裝之上形成一屏蔽層的製程來加以形成。屏蔽層452及454係降低撞擊封裝442及440的到達在該些封裝之內的半導體晶粒104以及其它構件的電磁輻射的量。EDS 450可以形成用於在此揭露的SiP模組的任一個的基礎。
圖17b係描繪根據EDS 446所製造的SiP模組460。離散的裝置260-264係被安裝到基板250之上，並且利用密封劑270來加以模製。屏蔽層462係在離散的裝置260-264以及密封劑270被加入之後，被形成在該整個SiP模組460之上。在一實施例中，複數個SiP模組460係被形成為一面板，並且在一載體上被單粒化。屏蔽層462係在單粒化之後，在該些單元保持在該載體上時被沉積在該面板之上。屏蔽層462係實質類似於屏蔽層452及454，但是在該SiP模組層級下被形成，而不是在該半導體封裝層級。
圖17c係描繪SiP模組470，其係利用來自圖17a的屏蔽層452及454以及來自圖17b的屏蔽層462而被形成。
圖18a-18d係描繪額外的用於具有EDS基板的SiP模組的EMI屏蔽的選項。圖18a係描繪SiP模組480，其中一屏蔽層482係被形成在頂端SiP子模組251之上。頂端SiP子模組251係如同在圖8a-8d中地加以形成，並且屏蔽層482係在單粒化之後被形成在該面板的單元之上。在某些實施例中，導電層254或是導電層256係橫向地延伸至基板250的邊緣，以接觸屏蔽層482並且提供一接地連接。
圖18b係展示SiP模組490，其係加入如同在圖12中的下方的SiP子模組301，其中屏蔽層494係被形成在該下方的SiP子模組之上。底部SiP子模組301係如同在圖11a-11f中所示地加以形成。在圖11f中的單粒化之後，但是在從該單粒化發生在其上的一載體移除該些單元之前，該面板係被電鍍有屏蔽層494。開口係被蝕刻穿過屏蔽層494以露出導電柱310，以用於進一步的系統整合。在某些實施例中，溝槽332係在屏蔽層494被形成之後加以形成在柱310的周圍。
圖18c係描繪一藉由將屏蔽層502加到在圖14b中的SiP模組380來加以形成的SiP模組500。圖18d係描繪一藉由將屏蔽層512加到在圖14a中的SiP模組370來加以形成的SiP模組510。屏蔽層502及512係以一種類似以上的屏蔽層452、454及462的方式來加以形成的。
圖19a-19b係描繪將上述的SiP模組以及EDS基板納入到一電子裝置中。圖19a係描繪來自圖14b的SiP模組380被安裝到一PCB或其它基板520之上以作為一電子裝置的部分的一部分的橫截面。凸塊284係被回焊到導電層522之上，以實體附接及電連接SiP模組380至PCB 520。上述的SiP模組、或是單獨EDS基板的任一個都可以類似地被安裝到PCB 520之上。在其它實施例中，熱壓或其它適當的附接及連接方法係被利用。在某些實施例中，一黏著或底膠填充層係被使用在SiP模組380以及PCB 520之間。
半導體晶粒104係透過凸塊114、基板200及150、導電柱210、以及導電凸塊284，來電耦接至導電層522。離散的裝置260-264係透過基板150、導電柱210、基板200、以及導電凸塊284，來耦接至導電層522以及半導體晶粒104。
圖19b係描繪包含PCB 520的電子裝置524，其中包含SiP模組380的複數個半導體封裝被安裝在該PCB的一表面之上。電子裝置524根據應用而可以具有一種類型的半導體封裝、或是多種類型的半導體封裝。
電子裝置524可以是一獨立的系統，其係利用該些半導體封裝以執行一或多個電性功能。或者是，電子裝置524可以是一較大的系統的一子構件。例如，電子裝置524可以是一平板電腦、行動電話、數位相機、通訊系統、或是其它電子裝置的部分。電子裝置524亦可以是被插入到一電腦中的一顯示卡、網路介面卡、或是其它信號處理卡。該些半導體封裝可包含微處理器、記憶體、ASIC、邏輯電路、類比電路、RF電路、離散的主動或被動裝置、或是其它半導體晶粒或電性構件。
在圖19b中，PCB 520係提供一個一般的基板以用於被安裝在該PCB之上的該些半導體封裝的結構的支撐及電互連。在某些實施例中，PCB 520係根據以上的說明而被製造為一EDS，並且包含內嵌在該PCB之內的主動及被動構件。導電層522係利用蒸鍍、電解的電鍍、無電的電鍍、網版印刷、或是其它適當的金屬沉積製程，而被形成在PCB 520的一表面之上、或是在PCB 520的層之內。導電層522係提供在該些半導體封裝、被安裝的構件、以及其它外部的系統或構件的每一個之間的電性通訊。導電層522亦視需要地提供電源及接地連接至該些半導體封裝的每一個。
在某些實施例中，一種半導體裝置係具有兩個封裝層級。第一層級的封裝是一種用於機械式地且電性地附接該半導體晶粒至一中間的基板的技術。第二層級的封裝係牽涉到機械式地且電性地附接該中間的基板至該PCB。在其它實施例中，一種半導體裝置可以只有該第一層級的封裝，其中該晶粒係機械式地且電性地被直接安裝至該PCB。
為了說明之目的，包含引線接合封裝526及覆晶528的數種類型的第一層級的封裝係被展示在PCB 520上。此外，包含球格陣列(BGA)530、凸塊晶片載體(BCC)532、平台柵格陣列(LGA)536、多晶片模組(MCM)538、四邊扁平無引腳封裝(QFN)540、內嵌式晶圓級球格陣列(eWLB)544、以及晶圓級晶片尺寸封裝(WLCSP)546的數種類型的第二層級的封裝係被展示和SiP模組380一起被安裝在PCB 520之上。在一實施例中，eWLB 544是一扇出晶圓層級的封裝(Fo-WLP)，並且WLCSP 546是一扇入晶圓層級的封裝(Fi-WLP)。
依據系統的需求，被配置有第一及第二層級的封裝類型的任意組合的半導體封裝、以及其它電子構件的任意組合都可以連接至PCB 520。在某些實施例中，電子裝置524係包含單一附接的半導體封裝，而其它實施例係需要多個互連的封裝。藉由在單一基板之上組合一或多個半導體封裝，製造商可以將預製的構件納入到電子裝置及系統之中。因為該些半導體封裝係包含複雜的功能，因此電子裝置可以利用較不昂貴的構件以及一流線化的製程來加以製造。所產生的裝置係較不可能失效，而且製造起來較不昂貴的係導致消費者較低的花費。
儘管本發明的一或多個實施例係已經詳細地描述，但是本領域技術人員將會體認到可以對於那些實施例做成修改及調適，而不脫離如同在以下的申請專利範圍中所闡述的本發明的範疇。
100:半導體晶圓 102:基底基板材料 104:半導體晶粒 106:切割道 108:非主動表面 110:主動表面 112:導電層 114:凸塊 118:鋸刀/雷射切割工具 150:基板 150a:基板 150b:基板 150c:基板 151:頂端基板子模組 151a:區域 151b:區域 151c:區域 151d:區域 152:切割道 153:基底絕緣材料/絕緣層 154:導電層 156:導電層 158:導電貫孔 160:離散的裝置 162:離散的裝置 166:焊料/焊料膏 174:導電貫孔 200:基板 200a:基板 200b:基板 200c:基板 201:底部基板子模組 201a:區域 201b:區域 201c:區域 201d:區域 202:切割道 203:絕緣層 204:導電層 206:導電層 208:導電貫孔 210:導電柱 220:密封劑/模製化合物 224:面板 230:嵌入式晶粒基板(EDS) 234:EDS 236:導電凸塊 238:EDS 240:銅核 240-242:銅核焊料球(CCSB) 242:焊料 244:EDS 246:e-Bar/PCB單元 247:核心基板 248:導電貫孔 250:基板 251:頂端SiP子模組 252:切割道 253:基底絕緣材料 254:導電層 256:導電層 260:離散的裝置/電感器 262:離散的裝置/電阻器 264:離散的裝置/電容器 266:焊料膏 270:密封劑/模製化合物 272:研磨機 274:背表面 276:SiP模組 280:面板 282:導電凸塊 284:導電凸塊 290:導電微柱 292:焊料蓋 294:非導電的膜/膏 300:基板 301:底部SiP子模組 302:切割道 303:絕緣層 304:導電層 306:導電層 308:導電貫孔 310:導電柱 312:離散的裝置 314:焊料膏 320:密封劑 322:研磨機 324:背表面 330:面板 331:雷射 332:缺口/溝槽 336:鋸刀/雷射切割工具/水力切割工具 340:SiP模組 344:凸塊 350:頂端SiP面板 360:底部SiP面板 370:SiP模組 380:SiP模組 390:SiP模組 392:半導體封裝 394:半導體晶粒 396:導電凸塊 398:密封劑 400:底部SiP子模組 410:底部SiP子模組 412:半導體晶粒 414:基板 416:導電凸塊 418:密封劑 420:SiP模組 422:導電柱 424:導電凸塊 426:頂端SiP子模組 428:離散的裝置 430:基板 431:半導體封裝 432:基板 434:密封劑 436:導電凸塊 440:半導體封裝 442:半導體封裝 446:EDS 450:EDS 452:屏蔽層 454:屏蔽層 460:SiP模組 462:屏蔽層 470:SiP模組 480:SiP模組 482:屏蔽層 490:SiP模組 494:屏蔽層 500:SiP模組 502:屏蔽層 510:SiP模組 512:屏蔽層 520:PCB 522:導電層 524:電子裝置 526:引線接合封裝 528:覆晶 530:球格陣列(BGA) 532:凸塊晶片載體(BCC) 536:平台柵格陣列(LGA) 538:多晶片模組(MCM) 540:四邊扁平無引腳封裝(QFN) 544:內嵌式晶圓級球格陣列(eWLB) 546:晶圓級晶片尺寸封裝(WLCSP)
[圖1a-1c]係描繪一半導體晶圓，其係具有複數個藉由切割道來加以分開的半導體晶粒； [圖2a-2b]係描繪一面板的頂端基板子模組的形成； [圖3a-3b]係描繪底部基板子模組的形成； [圖4a-4c]係描繪組合該些頂端基板子模組以及底部基板子模組成為單一具有內嵌的半導體構件的基板； [圖5]係描繪一種由頂端及底部基板子模組的組合所形成的EDS； [圖6a-6d]係描繪用於在該些頂端及底部基板子模組上的構件的可能的佈局； [圖7a-7c]係描繪利用替代的互連結構來形成該EDS； [圖8a-8d]係描繪形成一使用於該EDS的頂端SiP子模組； [圖9]係描繪一具有該EDS以及該頂端SiP子模組的SiP模組； [圖10]係描繪藉由利用導電的微柱的熱壓來將該頂端SiP子模組安裝至該EDS； [圖11a-11f]係描繪形成一使用於該EDS的底部SiP子模組； [圖12]係描繪一具有該EDS以及該頂端及底部SiP子模組的SiP模組； [圖13a-13c]係描繪在該EDS上直接形成該頂端及底部SiP子模組； [圖14a-14b]係描繪包含該EDS的SiP模組，其中該些SiP子模組係直接被形成在該EDS上； [圖15a-15c]係描繪SiP子模組，其中分開封裝的半導體構件係被安裝到該EDS之上； [圖16a-16c]係描繪形成具有內嵌在該EDS中的分開封裝的半導體構件的該EDS； [圖17a-17c]係描繪用於具有分開封裝的半導體構件的該EDS的電磁干擾(EMI)屏蔽的選項； [圖18a-18d]係描繪用於利用該EDS所做成的SiP模組的額外的EMI屏蔽的選項；以及 [圖19a-19b]係描繪一印刷電路板(PCB)，其中一SiP模組係被安裝到該PCB的一表面。
104:半導體晶粒
112:導電層
114:凸塊
150:基板
153:基底絕緣材料/絕緣層
154:導電層
156:導電層
158:導電貫孔
160:離散的裝置
162:離散的裝置
166:焊料/焊料膏
200:基板
203:絕緣層
204:導電層
206:導電層
208:導電貫孔
210:導電柱
220:密封劑/模製化合物
230:嵌入式晶粒基板(EDS)

Claims (15)

  1. 一種半導體裝置，包括： 第一基板，包括設置在所述第一基板的第一表面上的第一半導體構件； 第二基板，設置在所述第一基板之上並且包括設置在所述第二基板的第一表面上的第二半導體構件，其中所述第一半導體構件以及所述第二半導體構件設置在所述第一基板以及所述第二基板之間，以及其中在所述第二半導體構件之上的所述第一基板的所述第一表面的區域沒有安裝在所述第一基板上的半導體構件，以及在所述第一半導體構件之上的所述第二基板的所述第一表面的區域沒有安裝在所述第二基板上的半導體構件； 垂直的互連結構，自所述第一基板延伸至所述第二基板；以及 第一密封劑，沉積在所述第一基板以及所述第二基板之間。
  2. 如請求項1的半導體裝置，還包括系統級封裝子模組，相對於所述第一密封劑設置在所述第一基板或是所述第二基板之上。
  3. 如請求項2的半導體裝置，還包括屏蔽層，形成在所述系統級封裝子模組之上。
  4. 如請求項1的半導體裝置，其中所述第一半導體構件或所述第二半導體構件是半導體封裝。
  5. 如請求項1的半導體裝置，還包括第三半導體構件，設置在所述第一基板的第二表面之上。
  6. 如請求項5的半導體裝置，還包括第二密封劑，沉積在所述第一基板的所述第二表面以及所述第三半導體構件之上。
  7. 一種半導體裝置，包括： 第一基板，具有安裝至所述第一基板的第一半導體構件； 第二基板，設置在所述第一基板之上且具有安裝至所述第二基板的第二半導體構件，其中所述第二半導體構件是在所述第一半導體構件的高度內；以及 第一密封劑，沉積在所述第一基板以及所述第二基板之間且在所述第一半導體構件和所述第二半導體構件之上。
  8. 如請求項7的半導體裝置，還包括垂直的互連結構，設置在所述第一基板和所述第二基板之間。
  9. 如請求項7的半導體裝置，還包括第三半導體構件，相對於所述第一半導體構件設置在所述第一基板之上。
  10. 如請求項7的半導體裝置，還包括系統級封裝子模組，相對於所述第一半導體構件設置在所述第一基板之上。
  11. 一種半導體裝置，包括： 第一基板； 第二基板； 第一半導體構件，設置在所述第一基板以及所述第二基板之間；以及 密封劑，沉積在所述第一基板以及所述第二基板之間。
  12. 如請求項11的半導體裝置，還包括第二半導體構件，相對於所述第一半導體構件設置在所述第一基板之上。
  13. 如請求項11的半導體裝置，還包括系統級封裝子模組，相對於所述第一半導體構件設置在所述第一基板之上。
  14. 如請求項13的半導體裝置，其中所述系統級封裝子模組包括垂直的互連結構。
  15. 如請求項11的半導體裝置，其中所述第一半導體構件包括屏蔽層。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI779917B (zh) * 2021-11-03 2022-10-01 南茂科技股份有限公司 半導體封裝及其製作方法

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001294628B2 (en) 2000-09-15 2007-06-07 Anormed Inc. Chemokine receptor binding heterocyclic compounds
US7501518B2 (en) 2003-04-22 2009-03-10 Genzyme Corporation Methods of making 2,6-diaryl piperidine derivatives
NZ542850A (en) 2003-04-22 2007-12-21 Anormed Inc Chemokine receptor binding heterocyclic compounds with enhanced efficacy
US11272618B2 (en) 2016-04-26 2022-03-08 Analog Devices International Unlimited Company Mechanically-compliant and electrically and thermally conductive leadframes for component-on-package circuits
US10468384B2 (en) * 2017-09-15 2019-11-05 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming embedded die substrate, and system-in-package modules with the same
WO2019075205A1 (en) * 2017-10-11 2019-04-18 Octavo Systems Llc HIGH PERFORMANCE MODULE FOR SIP
US10497635B2 (en) 2018-03-27 2019-12-03 Linear Technology Holding Llc Stacked circuit package with molded base having laser drilled openings for upper package
US11276676B2 (en) * 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
US11437322B2 (en) * 2018-09-07 2022-09-06 Advanced Semiconductor Engineering, Inc. Semiconductor device package
US11075260B2 (en) * 2018-10-31 2021-07-27 Qualcomm Incorporated Substrate comprising recessed interconnects and a surface mounted passive component
US11410977B2 (en) 2018-11-13 2022-08-09 Analog Devices International Unlimited Company Electronic module for high power applications
KR102653212B1 (ko) * 2018-11-26 2024-04-01 삼성전기주식회사 반도체 패키지
US10825799B2 (en) * 2018-12-19 2020-11-03 Nanya Technology Corporation Semiconductor structure
US11094634B2 (en) * 2018-12-24 2021-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package structure comprising rigid-flexible substrate and manufacturing method thereof
US11239173B2 (en) * 2019-03-28 2022-02-01 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of chip package with fan-out feature
US11107774B2 (en) * 2019-04-18 2021-08-31 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US10770625B1 (en) * 2019-05-15 2020-09-08 Advanced Semiconductor Engineering, Inc. Semiconductor device packages
CN110120355A (zh) * 2019-05-27 2019-08-13 广东工业大学 一种降低扇出型封装翘曲的方法
TWI766164B (zh) * 2019-05-28 2022-06-01 力成科技股份有限公司 封裝結構
US11164819B2 (en) * 2019-05-30 2021-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing method thereof
TWI723414B (zh) * 2019-06-05 2021-04-01 矽品精密工業股份有限公司 電子封裝件及其製法
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
CN112242386A (zh) * 2019-07-16 2021-01-19 江苏长电科技股份有限公司 Sip封装结构
KR20210046913A (ko) 2019-10-18 2021-04-29 삼성전자주식회사 시스템-인-패키지 모듈
US11302646B2 (en) * 2020-02-14 2022-04-12 Advanced Semiconductor Engineering, Inc. Semiconductor device package
US11201127B2 (en) 2020-03-09 2021-12-14 Qualcomm Incorporated Device comprising contact to contact coupling of packages
US11844178B2 (en) 2020-06-02 2023-12-12 Analog Devices International Unlimited Company Electronic component
US11315858B1 (en) * 2020-06-17 2022-04-26 Xilinx, Inc. Chip package assembly with enhanced solder resist crack resistance
US11443997B2 (en) 2020-07-20 2022-09-13 Advanced Semiconductor Engineering, Inc. Semiconductor package and method of manufacturing the same
US11637055B2 (en) 2020-08-03 2023-04-25 Advanced Semiconductor Engineering, Inc. Semiconductor device package
KR102484595B1 (ko) * 2020-11-27 2023-01-05 우리테크놀러지 주식회사 Ncp 수지를 활용한 릴 투 릴 디스플레이 반도체 후공정 접합 방법
US20220181288A1 (en) * 2020-12-09 2022-06-09 Samsung Electronics Co., Ltd. Semiconductor package including a dualized signal wiring structure
KR20220106561A (ko) * 2021-01-22 2022-07-29 삼성전자주식회사 양면 배치형 전자 부품 모듈 및 그를 포함하는 전자장치
CN114914234A (zh) * 2021-02-10 2022-08-16 华为技术有限公司 一种功率结构体和制备方法以及设备
KR102477304B1 (ko) * 2021-03-12 2022-12-13 파워마스터반도체 주식회사 양면 냉각 파워 모듈 패키지
WO2022209737A1 (ja) * 2021-03-31 2022-10-06 株式会社村田製作所 高周波モジュール及び通信装置
US11791276B2 (en) * 2021-04-08 2023-10-17 Qualcomm Incorporated Package comprising passive component between substrates for improved power distribution network (PDN) performance
US11876085B2 (en) 2021-06-25 2024-01-16 Qualcomm Incorporated Package with a substrate comprising an embedded capacitor with side wall coupling
US11728248B2 (en) * 2021-07-01 2023-08-15 Deca Technologies Usa, Inc. Fully molded semiconductor structure with through silicon via (TSV) vertical interconnects
US11616003B2 (en) 2021-07-01 2023-03-28 Deca Technologies Usa, Inc. Stackable fully molded semiconductor structure with through silicon via (TSV) vertical interconnects
US20230253380A1 (en) * 2022-02-10 2023-08-10 Xilinx, Inc. Chip package with near-die integrated passive device
CN116979232A (zh) * 2022-04-21 2023-10-31 华为技术有限公司 一种网络接口芯片、网络接口设备及以太网设备
US20240063195A1 (en) * 2022-08-16 2024-02-22 Qualcomm Incorporated Package comprising a first substrate, a second substrate and an electrical device coupled to a bottom surface of the second substrate

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04291984A (ja) * 1991-03-20 1992-10-16 Fujitsu Ltd プリント板ユニット構造
TW550997B (en) 2001-10-18 2003-09-01 Matsushita Electric Ind Co Ltd Module with built-in components and the manufacturing method thereof
JP2003318361A (ja) 2002-04-19 2003-11-07 Fujitsu Ltd 半導体装置及びその製造方法
US7394663B2 (en) * 2003-02-18 2008-07-01 Matsushita Electric Industrial Co., Ltd. Electronic component built-in module and method of manufacturing the same
JP3917946B2 (ja) * 2003-03-11 2007-05-23 富士通株式会社 積層型半導体装置
JPWO2007069606A1 (ja) 2005-12-14 2009-05-21 新光電気工業株式会社 チップ内蔵基板の製造方法
KR100865125B1 (ko) 2007-06-12 2008-10-24 삼성전기주식회사 반도체 패키지 및 그 제조방법
US7968373B2 (en) * 2008-05-02 2011-06-28 Stats Chippac Ltd. Integrated circuit package on package system
KR101015651B1 (ko) * 2008-12-05 2011-02-22 삼성전기주식회사 칩 내장 인쇄회로기판 및 그 제조방법
US8106499B2 (en) 2009-06-20 2012-01-31 Stats Chippac Ltd. Integrated circuit packaging system with a dual substrate package and method of manufacture thereof
US8653654B2 (en) 2009-12-16 2014-02-18 Stats Chippac Ltd. Integrated circuit packaging system with a stackable package and method of manufacture thereof
JP2011198866A (ja) 2010-03-18 2011-10-06 Renesas Electronics Corp 半導体装置およびその製造方法
KR101855294B1 (ko) 2010-06-10 2018-05-08 삼성전자주식회사 반도체 패키지
US9252130B2 (en) 2013-03-29 2016-02-02 Stats Chippac, Ltd. Methods of manufacturing flip chip semiconductor packages using double-sided thermal compression bonding
US9527723B2 (en) 2014-03-13 2016-12-27 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming microelectromechanical systems (MEMS) package
EP3167484A4 (en) 2014-07-07 2017-10-18 Intel IP Corporation Package-on-package stacked microelectronic structures
US20160086930A1 (en) * 2014-09-24 2016-03-24 Freescale Semiconductor, Inc. Fan-out wafer level package containing back-to-back embedded microelectronic components and assembly method therefor
KR102117477B1 (ko) 2015-04-23 2020-06-01 삼성전기주식회사 반도체 패키지 및 반도체 패키지의 제조방법
TWI590392B (zh) 2015-08-03 2017-07-01 矽品精密工業股份有限公司 電子封裝件及其製法
US10468384B2 (en) * 2017-09-15 2019-11-05 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming embedded die substrate, and system-in-package modules with the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI779917B (zh) * 2021-11-03 2022-10-01 南茂科技股份有限公司 半導體封裝及其製作方法

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