TW202125673A - 輸送反應氣體之處理系統與方法 - Google Patents
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Abstract
於此描述的實施例大體上關於一種輸送反應氣體的處理系統和方法。處理系統包括基板支撐系統、注入錐和進氣口。注入錐包括線性舵。線性舵設置成使得反應氣體通過注入錐的流動導致在基板的特定部分上的膜生長。方法包括以下步驟:使氣體流過注入錐並將氣體輸送到下面的基板上。反應氣體的局部化允許在基板的特定部分上的膜生長。
Description
本揭露書的實施例關於一種設備和方法,並且更具體地,關於一種輸送反應氣體的處理系統和方法。
在積體電路和微裝置中的記憶體閘氧化物、襯裡氧化物、犧牲氧化物、側壁氧化物、快閃隧道氧化物、氧化物-氮化物-氧化物(ONO)堆疊或類似者的製造中,可藉由快速熱氧化處理半導體基板。在這個處理中,可藉由將基板曝露於氧和氫基反應氣體同時用輻射熱源加熱基板以產生氧和氫自由基而在基板上形成氧化物層。氧自由基撞擊基板的表面以在矽基板上形成氧化物層,例如二氧化矽層。
常規地,可旋轉的基板支撐件使基板旋轉,同時將反應氣體直接朝著基板的中心引入。注入系統將反應氣體注入腔室中並注入到基板上,在此處反應氣體與基板反應形成所期望的層。常規的注入錐導致試圖覆蓋整個基板表面的反應氣體的廣泛擴散。
本領域中的注入系統的一個缺點是注入系統不能將反應氣體均勻地分佈在基板的表面上。反應氣體更多地分佈在基板的中心處,而更少地分佈在基板的邊緣附近,且因此在基板的邊緣附近生長的氧化物層的厚度小於在基板的中心處或附近的氧化物層的厚度。例如,中心到邊緣(CE)的厚度差是不可接受地高。
因此,存在有改進的處理系統和方法的需求,其將反應氣體更均勻地分佈在基板上方。
在一個實施例中,提供了一種注入錐,包括主體。主體包括:第一部分,配置成輸送反應氣體;及第二部分,配置成接收反應氣體。第一部分包括底表面和一個舵。第一部分和第二部分由劃分線隔開。
在另一個實施例中,提供了一種處理系統,包括注入錐、進氣口和基板支撐系統。注入錐包括主體。主體包括:第一部分,配置成輸送反應氣體;及第二部分,配置成接收反應氣體。第一部分包括底表面和一個線性舵。第一部分和第二部分由劃分線隔開。進氣口耦接到注入錐。進氣口配置成輸送反應氣體。基板支撐系統包括基板支撐件。
在又一個實施例中,提供了一種輸送反應氣體的方法,方法包括以下步驟:使反應氣體流過進氣口;使反應氣體流過注入錐;及將反應氣體輸送到設置在基板支撐件上方的基板的表面,使得在基板的表面上形成膜。注入錐包括主體。主體包括:第一部分,配置成輸送反應氣體;及第二部分,配置成接收反應氣體。第一部分包括底表面和線性舵。第一部分和第二部分由劃分線隔開。進氣口耦接到注入錐。進氣口配置成輸送反應氣體。基板支撐系統包括基板支撐件。
處理系統提供了在基板的一部分上的膜的局部生長。方法允許膜在基板上分段或連續生長,並因此改善了膜的均勻性。
於此描述的實施例大體上關於一種輸送反應氣體的處理系統和方法。處理系統包括基板支撐系統、注入錐和進氣口。注入錐包括線性舵。線性舵設置成使得反應氣體通過注入錐的流動導致在基板的特定部分上的膜沉積。方法包括以下步驟:使氣體流過注入錐並將氣體輸送到下面的基板上。反應氣體的局部化允許在基板的特定部分上的膜生長。可旋轉基板,並重複處理,從而使膜層分段生長,並提高均勻性。本揭露書的實施例可用於(但不限於)膜的分段生長的處理系統和方法。
如於此所用,術語「約」是指與標稱值相差+/-10%。應該理解,這種變化可包括在於此提供的任何值中。
根據一個實施例,第1A圖顯示了處理系統100的示意性俯視圖,而第1B圖顯示了處理系統的示意性側視圖。如圖所示,處理系統100包括基板支撐系統170、注入錐200和進氣口160。處理系統100設置在處理腔室101中,且處理腔室101可為本領域中用於在基板上生長膜的任何腔室(諸如熱生長腔室)。處理腔室101包括排氣口120,且通過排氣口將來自膜生長的不想要的副產物排出。處理系統100配置成將反應性氣體沉積在設置在基板支撐系統170上的基板上,從而在基板上生長期望的膜。
如圖所示,基板支撐系統170包括致動器106、軸107和基板支撐件105。基板支撐件105由軸107支撐,且軸耦接至致動器106。致動器106配置成使基板支撐件105繞z軸線旋轉。致動器106可以連續或逐步的方式旋轉基板支撐件105。致動器106可使基板支撐件105順時針或逆時針旋轉。致動器106可在膜生長期間旋轉基板110,或者基板支撐件105可在膜生長期間保持靜止。致動器106由控制器(未顯示)控制,且控制器向致動器發出命令。基板110被支撐在基板支撐件105上。基板支撐件105還可包括冷卻系統(未顯示)、加熱器(未顯示)、靜電吸盤(ESC)(未顯示)或磁懸浮系統,取決於膜沉積處理是否包括提高或降低基板溫度或對基板進行電偏壓。基板支撐系統170配置成在基板上的膜生長之前、期間或之後旋轉基板110。
基板110包括任何合適的材料,包括(但不限於)非晶介電質、非非晶(non-amorphous)介電質、晶體介電質、氧化矽、聚合物及其組合。合適的示例包括氧化物、硫化物、磷化物,碲化物或其組合。在一個示例中,基板110包括矽(Si)、二氧化矽(SiO2
)、鍺(Ge)、矽鍺(SiGe)或藍寶石。基板可包括設置在其上的任何其他附加層。
反應氣體(箭頭150所示的流)可為本領域中用以生長膜的任何處理氣體,諸如(但不限於)氧氣(O2
)、氫氣(H2
)、一氧化二氮(N2
O)、二氧化碳(CO2
)、過氧化氫(H2
O2
)、臭氧(O3
)、水(H2
O)、氨(NH3
)、氮氣(N2
)、氦氣(He)、氬氣(Ar)、任何其他中性載體氣體、以上各項的任何組合、以上各項產生的任何電漿以及以上各項產生的任何離子或自由基。在一個示例中,基板110包括Si,反應氣體包括O2
和N2
,且沉積膜110f包括SiO2
。另外,儘管在整個本揭露書中使用術語「生長(growth)」和「生長(grown)」,但是應理解,本揭露書涵蓋形成膜的任何形式,包括膜生長或膜沉積。
基板支撐件105被分隔線117分為較高生長部分116和較低生長部分115。處理系統100配置成使得膜110f的生長大部分或全部發生在基板110的設置在基板支撐件105的較高生長部分116上方的部分上。同樣,膜110f的生長少部分或不發生在基板110的設置在基板支撐件105的較低生長部分115上方的部分上。因此,膜的生長可很大程度上限制在基板110的特定部分。根據一個實施例,較低生長部分115和生長部分116具有約相同的面積。
第1C圖顯示了根據一個實施例的在沉積膜110f之後的處理系統100的示意性俯視圖。如圖所示,膜110f大部分或僅在基板的設置在基板支撐件105的較高生長部分116上方的部分上生長。
第1D圖顯示了根據一個實施例的在膜110f’第二次生長之後的處理系統100的示意性俯視圖。在膜110f生長之後,將基板支撐件105旋轉約180°,使得膜110f設置在基板110的設置在基板支撐件105的新的較低生長部分115'上方的部分上方,且沒有膜生長的基板的部分設置在基板支撐件105的較高生長部分116上方。可重複生長,使得膜110f'在設置在基板支撐件105的新的較高生長部分116'上方的基板110上生長,這導致膜110f、110f'在整個基板上方的均勻膜生長。在其他實施例中,反應氣體的第二次輸送可包括不同的氣體,且因此膜110f、110f'可包括不同的材料。
注入錐200可設置在處理腔室101的壁(未顯示)中的窗口(未顯示)中。注入錐200設置為使得其與基板支撐件105的表面成角度θa
(第1B圖)。根據一個實施例,角度θa
為約20°至約30°。
第2A和2B圖顯示了根據一個實施例的具有兩個線性舵和一個線性舵的注入錐200的示意圖。如第2A圖所示,注入錐200A包括主體201、底表面202和兩個線性舵220。如第2B圖所示,注入錐200B包括主體201、底表面202和線性舵220。儘管在第2A圖所示的實施例中僅顯示了兩個線性舵220,且在第2B圖所示的實施例中顯示了一個線性舵220,應當理解,注入錐200中可包括任意數量的線性舵220。主體201和(多個)線性舵220可由石英或對反應氣體不反應的任何其他材料製成。注入錐200被劃分線215分隔為第一部分231和第二部分230,其中劃分線平行於x方向。線性舵220設置在第一部分231中。第一部分231和第二部分230可為兩個分開的部件,其組合以製造注入錐200,或者第一部分和第二部分可由同一部件製成。注入錐200耦接到進氣口160,且進氣口將反應氣體輸送到注入錐。注入錐200配置成將反應氣體輸送到基板110。儘管描繪了注入錐200從第1D圖中的一個方向朝向基板支撐系統170開口,但是還可想到注入錐200可從其他方向朝向基板支撐系統170開口。特別地,第2A和2B圖中所描繪的注入錐200可圍繞X軸線翻轉及/或圍繞基板支撐系統170在任何位置旋轉。
注入錐200被分隔線210劃分為頂部232和底部233,其中分隔線210平行於y方向。根據一個實施例,線性舵220(如,第2A圖)或線性舵220(如,第2B圖)分別以這樣的方式設置和傾斜,使得反應氣體大部分或完全流過注入錐200的頂部232。在可與於此描述的其他實施例結合的一些實施例中,如第2B圖所示,舵設置在頂部232中。根據一個實施例,注入錐200的分隔線210與基板支撐件105的分隔線117平行。若允許反應氣體流過注入錐200的底部233,則大部分的反應氣體會錯過大部分的基板區域,並保持未反應或被吸入排氣口120中,浪費了反應氣體並導致在基板的設置在較低生長部分115上方的部分上的不均勻膜生長。另外,沒有舵的注入錐呈現出噴射流狀的流,其中流集中在一條窄流中。於此揭露的注入錐200允許流150在更寬的區域中散佈,同時仍聚焦在較高生長部分116上。
通過注入錐200的頂部232的流150允許膜110f的生長大部分或全部在基板110的設置在基板支撐件105的較高生長部分116上方的部分上。由於線性舵220所致的增加的反應氣體的循環增加了反應氣體與基板110的反應速率,從而導致更快的膜110f生長。線性舵220設置為使得在較高生長部分116上的反應氣體的整體速度(相對於較高生長部分116的區域)儘可能高,而在較高生長部分116中,整體速度仍然儘可能均勻。線性舵220允許比其他舵形狀(諸如楔形)更高的流150的速度。
線性舵220可以任何佈置設置在注入錐200的第一部分231內。線性舵220相對於底表面202具有角度θ。根據一些實施例,線性舵220的每一個可具有相同的角度θ或不同的角度。根據一些實施例,角度θ從約5°至約85°變化,諸如從約10°至約40°、諸如從約25°至約55°,或從約35°至約45°。在一些實施例中,存在具有端部220E的單個線性舵,根據一個實施例,端部220E與底表面202分開約15mm至約60mm的距離。根據一個實施例,線性舵220的端部220E與劃分線215分開約35mm至約45mm的距離。在可與於此描述的其他實施例結合的一些實施例中,如第2B圖所示,舵220的端部220E與底表面202分開約12mm至約50mm的距離,諸如約12mm至約40mm、諸如約25mm至約40mm。在頂表面201和底表面202之間的總最大距離小於80mm,諸如約60mm至約75mm。根據一個實施例,複數個線性舵220中的線性舵的長度為從約25mm至約75mm。根據一個實施例,複數個線性舵220設置為使得從注入錐200出來的反應氣體的流150具有約100或更小的雷諾數(Re),並且流是層流的。
第3圖是根據一個實施例的用於輸送反應氣體的方法300的操作的流程圖。儘管結合第1A-1D和3圖描述了方法300的操作,但是熟悉本領域者將理解,配置成以任何順序執行方法的操作的任何系統都落入於此所述的實施例的範圍內。第1A-1B圖顯示了方法300開始之前的處理系統100。
方法300在操作310處開始,在此操作中,反應氣體流過進氣口160。反應氣體可為上述的任何反應氣體。
在操作320處,反應氣體流過注入錐200。注入錐200可為上述實施例中的任一個。根據一個實施例,反應氣體的流150僅通過注入錐200的頂部232輸送。根據一個實施例,反應氣體的流150是層流。根據一個實施例,通過注入錐200的反應氣體的流150具有約100或更小的Re。
在操作330處,反應氣體被輸送到基板110的表面。如上所述,反應氣體與基板110的表面反應。可將基板110從約23℃的溫度加熱到約1200℃。可輸送反應氣體,使得反應氣體使膜110f在基板110的設置在基板支撐件105的較高生長部分116上方的部分上生長。根據一個實施例,膜110f形成物的體積的約60%至約90%或更多設置在較高生長部分116中。在一些實施例中,在執行操作310、320、330的同時,基板110連續旋轉。第1C圖顯示了膜110f已經沉積在基板110的設置在基板支撐件105的較高生長部分116上方的部分上之後的處理系統100。
在任選操作340處,將基板110旋轉約180°,使得膜110f設置於基板110的設置在基板支撐件的新的較低生長部分115'上方的部分上方,而基板的沒有膜生長的部分設置在基板支撐件的較高生長部分116上方。重複操作310、320和330,使得膜110'在設置在基板支撐件105的新的較高生長部分116'上方的基板110上生長,這導致膜110f、110f'在整個基板110上方的均勻膜生長。在其他實施例中,反應氣體的第二次輸送可包括不同的氣體,且因此膜110f、110f'可包括不同的材料。第1D圖顯示了膜110f、110f’已經沉積在基板110上之後的處理系統100。
如上所述,提供了一種處理系統。處理系統包括基板支撐系統、注入錐和進氣口。注入錐包括一個或多個線性舵。線性舵設置為使得反應氣體通過注入錐的流導致在基板的特定部分的膜生長。方法包括使氣體流過注入錐並將氣體輸送到下方的基板上。
反應氣體的局部化(及因此的膜生長)允許在基板的特定部分上的膜生長。可旋轉基板,及/或重複處理,從而導致具有改善均勻性的膜層的分段或連續生長。
儘管前述內容涉及本揭露書的實施例,但是在不背離本揭露書的基本範圍的情況下,可設計本揭露書的其他和進一步的實施例,且本揭露書的範圍由以下的申請專利範圍決定。
100:處理系統
101:處理腔室
105:基板支撐件
106:致動器
107:軸
110:基板
110f:膜
110f’:膜
115:較低生長部分
115’:較低生長部分
116:較高生長部分/生長部分
116’:較高生長部分
117:分隔線
120:排氣口
150:箭頭/流
160:進氣口
170:基板支撐系統
200:注入錐
200A:注入錐
200B:注入錐
201:主體/頂表面
202:底表面
210:分隔線
215:劃分線
220:線性舵/舵
220E:端部
230:第二部分
231:第一部分
232:頂部
233:底部
300:方法
310:操作
320:操作
330:操作
340:操作
為了可詳細地理解本揭露書的上述特徵的方式,可藉由參考實施例來獲得上面簡要概述的本揭露書的更詳細的描述,其中一些實施例在附隨的圖式中顯示。然而,應當注意,附隨的圖式中僅顯示了這份揭露書的典型實施例,且因此不應被認為是對其範圍的限制,因為本揭露書可允許其他等效的實施例。
第1A-1B圖顯示了根據一個實施例的處理系統的示意圖。
第1C圖顯示了根據一個實施例的在沉積膜之後的處理系統的示意性俯視圖。
第1D圖顯示了根據一個實施例的在第二次沉積膜之後的處理系統的示意性俯視圖。
第2圖顯示了根據一個實施例的具有線性舵的注入錐的示意圖。第3圖是根據一個實施例的用於輸送反應氣體的方法操作的流程圖。
為了促進理解,在可能的情況下使用了相同的元件符號來表示圖式中共有的相同元件。可預期,一個實施例中揭露的元件可在沒有具體敘述的情況下有益地用於其他實施例。
國內寄存資訊(請依寄存機構、日期、號碼順序註記)
無
國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記)
無
150:箭頭/流
160:進氣口
200:注入錐
200B:注入錐
201:主體/頂表面
202:底表面
210:分隔線
215:劃分線
220:線性舵/舵
220E:端部
230:第二部分
231:第一部分
232:頂部
233:底部
Claims (20)
- 一種注入錐,包含: 一主體,包含: 一第一部分,配置成輸送一反應氣體,該第一部分包含: 一底表面;及 一線性舵;及 一第二部分,配置成接收該反應氣體,該第一部分和該第二部分由一劃分線隔開。
- 如請求項1所述之注入錐,其中每個線性舵與平行於該底表面的一軸線所成的一角度為從約10°至約40°。
- 如請求項2所述之注入錐,其中每個線性舵與該底表面所成的該角度為從約20°至約30°。
- 如請求項1所述之注入錐,其中該線性舵的一長度為約25mm至約75mm。
- 如請求項4所述之注入錐,其中該注入錐藉由一注入分隔線被分成一頂部和一底部,其中該線性舵設置在該注入錐的一頂部中。
- 如請求項1所述之注入錐,其中該線性舵的一端部設置成距該底表面約12mm至約40mm。
- 一種處理系統,包含: 一基板支撐系統,包含一基板支撐件; 一注入錐,包含: 一主體,包含: 一第一部分,配置成朝該基板支撐件的一較高生長部分輸送一反應氣體,該第一部分包含: 一底表面;及 一線性舵;及 一第二部分,配置成接收該反應氣體;及 一進氣口,耦接到該注入錐,該進氣口配置成輸送該反應氣體至該注入錐。
- 如請求項7所述之處理系統,其中該注入錐藉由一注入分隔線被分成一頂部和一底部,該處理系統配置成僅通過該注入錐的該頂部輸送反應氣體。
- 如請求項8所述之處理系統,其中該基板支撐件被一支撐件分隔線劃分為該較高生長部分和一較低生長部分,且該支撐件分隔線平行於該注入分隔線。
- 如請求項9所述之處理系統,其中該支撐件分隔線將該較高生長部分和該較低生長部分分開,使得該較高生長部分和該較低生長部分各自具有約相等的面積。
- 如請求項7所述之處理系統,其中該注入錐體設置成使得其與該基板支撐件的一邊緣成一角度,其中該角度為從約20°至約30°。
- 一種輸送一反應氣體的方法,該方法包含以下步驟: 使該反應氣體流過一進氣口; 使該反應氣體流過一注入錐,該注入錐包含: 一主體,包含: 一第一部分,配置成輸送該反應氣體,該第一部分包含: 一底表面;及 一線性舵;及 一第二部分,配置成接收該反應氣體;及 將該反應氣體輸送到設置在一基板支撐件上方的一基板的一表面,使得在該基板的該表面上形成一膜。
- 如請求項12所述之方法,其中該注入錐藉由一劃分線分成一頂部和一底部,該注入錐配置成僅通過該注入錐的該頂部輸送反應氣體。
- 如請求項13所述之方法,其中該基板被一分隔線分隔為一較高生長部分和一較低生長部分,並且大於約60%的膜形成物發生在該基板的該較高生長部分上。
- 如請求項14所述之方法,其中該分隔線平行於該劃分線。
- 如請求項13所述之方法,其中該反應氣體通過該注入錐的一流為一層流。
- 如請求項16所述之方法,其中該反應氣體通過該注入錐的該流的一雷諾數(Re)為約100或更小。
- 如請求項12所述之方法,其中每個線性舵與該底表面所成的一角度為從約10°至約40°。
- 如請求項12所述之方法,其中在該方法期間,使該基板連續地旋轉。
- 如請求項12所述之方法,進一步包含以下步驟:在輸送該反應氣體之後,使該基板旋轉約180°,並重複使該反應氣體流經一進氣口,使該反應氣體流經一注入錐,並輸送該反應氣體。
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-
2020
- 2020-09-09 CN CN202080062904.0A patent/CN114599816A/zh active Pending
- 2020-09-09 KR KR1020227011795A patent/KR20220061191A/ko not_active Application Discontinuation
- 2020-09-09 JP JP2022514991A patent/JP7376693B2/ja active Active
- 2020-09-09 WO PCT/US2020/049853 patent/WO2021050489A1/en active Application Filing
- 2020-09-09 US US17/753,524 patent/US20220411927A1/en active Pending
- 2020-09-09 TW TW109130930A patent/TW202125673A/zh unknown
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WO2021050489A1 (en) | 2021-03-18 |
CN114599816A (zh) | 2022-06-07 |
JP2022547508A (ja) | 2022-11-14 |
KR20220061191A (ko) | 2022-05-12 |
JP7376693B2 (ja) | 2023-11-08 |
WO2021050489A8 (en) | 2022-05-05 |
US20220411927A1 (en) | 2022-12-29 |
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