CN114599816A - 输送反应物气体的处理系统和方法 - Google Patents
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Abstract
本文描述的实施方式总体涉及输送反应物气体的处理系统和方法。处理系统包括基板支撑系统、注入锥和进口。注入锥包括线性舵。线性舵设置成使得反应物气体通过注入锥的流动造成在基板的特定部分上的膜生长。方法包括以下步骤：使气体流动通过注入锥并且将气体输送到下面的基板上。反应物气体的局部化允许在基板的特定部分上的膜生长。
Description
背景
领域
本公开内容的实施方式涉及设备和方法，并且更具体地，涉及输送反应物气体的处理系统和方法。
相关技术的说明
在集成电路和微装置中的存储器栅极氧化物、衬里氧化物、牺牲氧化物、侧壁氧化物、快闪穿隧氧化物(flash tunnel oxide)、氧化物-氮化物-氧化物(ONO)堆叠结构(stack)或类似者的制造中，可通过快速热氧化来处理半导体基板。在这个工艺中，可通过在用辐射热源加热基板的同时将基板暴露于基于氧和氢的反应物气体以产生氧和氢自由基而在基板上形成氧化物层。氧自由基撞击基板的表面以在硅基板上形成氧化物层，例如二氧化硅层。
常规地，可旋转的基板支撑件使基板旋转，同时将反应物气体径直朝向基板的中心引入。注入系统将反应物气体注入到腔室中并且注入到基板上，在此处反应物气体与基板反应形成所期望的层。常规的注入锥造成试图覆盖整个基板表面的反应物气体的广泛扩散。
本领域中的注入系统的一个缺点是注入系统没有将反应物气体均匀地分布在基板的表面上。反应物气体更多地分布在基板的中心处，而更少地分布在基板的边缘附近，并且因此在基板的边缘附近生长的氧化物层的厚度小于在基板的中心处或附近的氧化物层的厚度。例如，中心到边缘(CE)厚度差不可接受地高。
因此，存在对于改进的处理系统和方法的需求，所述处理系统和方法将反应物气体更均匀地分布在基板上方。
概述
在一个实施方式中，提供一种注入锥，包括主体。主体包括：第一部分，配置成输送反应物气体；和第二部分，配置成接收反应物气体。第一部分包括底表面和一个舵。第一部分和第二部分由划分线分隔。
在另一个实施方式中，提供一种处理系统，包括注入锥、进口和基板支撑系统。注入锥包括主体。主体包括：第一部分，配置成输送反应物气体；和第二部分，配置成接收反应物气体。第一部分包括底表面和一个线性舵。第一部分和第二部分由划分线分隔。进口耦接到注入锥。进口配置成输送反应物气体。基板支撑系统包括基板支撑件。
在又一个实施方式中，提供一种输送反应物气体的方法，方法包括以下步骤：使反应物气体流动通过进口；使反应物气体流动通过注入锥；和将反应物气体输送到设置在基板支撑件上方的基板的表面，使得在基板的表面上形成膜。注入锥包括主体。主体包括：第一部分，配置成输送反应物气体；和第二部分，配置成接收反应物气体。第一部分包括底表面和线性舵。第一部分和第二部分由划分线分隔。进口耦接到注入锥。进口配置成输送反应物气体。基板支撑系统包括基板支撑件。
处理系统提供在基板的一部分上的膜的局部生长。方法允许膜在基板上逐段(piecewise)或连续生长，并且因此改善膜的均匀性。
附图简要说明
为了可详细地理解本公开内容的上述特征的方式，可通过参考实施方式来获得上面简要概述的本公开内容的更详细的描述，其中一些实施方式在附图式中图示。然而，应当注意，附图仅图示此公开内容的典型实施方式，且因此不应被认为是对本公开内容的范围的限制，因为本公开内容可允许其他等效的实施方式。
图1A-图1B图示根据一个实施方式的处理系统的示意图。
图1C图示根据一个实施方式的在沉积膜之后的处理系统的示意性俯视图。
图1D图示根据一个实施方式的在第二次沉积膜之后的处理系统的示意性俯视图。
图2A图示根据一个实施方式的具有两个线性舵的注入锥的示意图。
图2B图示根据一个实施方式的具有单个线性舵的注入锥的示意图。
图3是根据一个实施方式的用于输送反应气体的方法操作的流程图。
为了促进理解，已经在可能的情况下使用相同的参考数字来表示图中共有的相同元件。预期的是，一个实施方式中公开的元件可在没有具体叙述的情况下有益地用于其他实施方式。
具体说明
本文描述的实施方式总体涉及输送反应物气体的处理系统和方法。处理系统包括基板支撑系统、注入锥和进口。注入锥包括线性舵。线性舵设置成使得反应物气体通过注入锥的流动造成在基板的特定部分上的膜沉积。方法包括以下步骤：使气体流动通过注入锥并且将气体输送到下面的基板上。反应物气体的局部化允许在基板的特定部分上的膜生长。可使基板旋转，并重复工艺，从而使膜层在具有改善的均匀性的情况下逐段生长。本公开内容的实施方式可对用于膜的逐段生长的处理系统和方法有用，但不限于用于膜的逐段生长的处理系统和方法。
如本文中所用，术语“约”是指从标称值变化+/-10％。应该理解，这样的变化可包括在本文提供的任何值中。
根据一个实施方式，图1A图示处理系统100的示意性俯视图，而图1B图示处理系统的示意性侧视图。如图所示，处理系统100包括基板支撑系统170、注入锥200和进口160。处理系统100设置在处理腔室101中，且处理腔室101可为本领域中用于在基板上生长膜的任何腔室(诸如热生长腔室之类)。处理腔室101包括排放装置120，并且通过排放装置将来自膜生长的不想要的副产物排出。处理系统100配置成将反应性气体沉积在设置在基板支撑系统170上的基板上，使得在基板上生长期望的膜。
如图所示，基板支撑系统170包括致动器106、轴107和基板支撑件105。基板支撑件105由轴107支撑，且轴耦接至致动器106。致动器106配置成使基板支撑件105绕z轴线旋转。致动器106可以连续或逐步的方式旋转基板支撑件105。致动器106可使基板支撑件105顺时针或逆时针旋转。致动器106可在膜生长期间旋转基板110，或者基板支撑件105可在膜生长期间保持静止。致动器106由控制器(未显示)控制，且控制器向致动器发出命令。基板110被支撑在基板支撑件105上。基板支撑件105还可包括冷却系统(未显示)、加热器(未显示)、静电吸盘(ESC)(未显示)或磁悬浮系统，取决于膜沉积工艺是否包括提高或降低基板温度或对基板进行电偏压。基板支撑系统170配置成在基板上的膜生长之前、期间或之后旋转基板110。
基板110包括任何合适的材料，包括(但不限于)非晶电介质、非非晶(non-amorphous)电介质、结晶电介质、氧化硅、聚合物和上述项的组合。合适的示例包括氧化物、硫化物、磷化物，碲化物或上述项的组合。在一个示例中，基板110包括硅(Si)、二氧化硅(SiO2)、锗(Ge)、硅锗(SiGe)或蓝宝石。基板可包括设置在基板上的任何其他附加层。
反应气体(箭头150所示的流)可为本领域中用以生长膜的任何处理气体，诸如(但不限于)氧气(O2)、氢气(H2)、一氧化二氮(N2O)、二氧化碳(CO2)、过氧化氢(H2O2)、臭氧(O3)、水(H2O)、氨(NH3)、氮气(N2)、氦(He)、氩(Ar)、任何其他中性运载气体、以上各项的任何组合、由以上项产生的任何等离子体和由以上项产生的任何离子或自由基。在一个示例中，基板110包括Si，反应气体包括O2和N2，且沉积膜110f包括SiO2。另外，尽管在整个本公开内容中使用术语“生长(growth)”和“生长(grown)”，但是应理解，本公开内容涵盖产生膜的任何形式，包括膜生长或膜沉积。
基板支撑件105被分隔线117划分为较高生长部分116和较低生长部分115。处理系统100配置成使得膜110f的生长大部分或全部发生在基板110的设置在基板支撑件105的较高生长部分116上方的部分上。同样，膜110f的生长少部分或不发生在基板110的设置在基板支撑件105的较低生长部分115上方的部分上。因此，膜的生长可很大程度上限制在基板110的特定部分。根据一个实施方式，较低生长部分115和生长部分116具有大约相同的面积。
图1C图示根据一个实施方式的在沉积膜110f之后的处理系统100的示意性俯视图。如图所示，膜110f大部分或仅在基板的设置在基板支撑件105的较高生长部分116上方的部分上生长。
图1D图示根据一个实施方式的在膜110f’第二次生长之后的处理系统100的示意性俯视图。在膜110f生长之后，将基板支撑件105旋转约180°，使得膜110f设置在基板110的设置在基板支撑件105的新的较低生长部分115’上方的部分上方，且没有膜生长的基板的部分设置在基板支撑件105的较高生长部分116上方。可重复生长，使得膜110f’在设置在基板支撑件105的新的较高生长部分116’上方的基板110上生长，这造成膜110f、110f’在整个基板上方的均匀膜生长。在其他实施方式中，反应气体的第二输送可包括不同的气体，且因此膜110f、110f’可包括不同的材料。
注入锥200可设置在处理腔室101的壁(未显示)中的窗口(未显示)中。注入锥200设置为使得注入锥与基板支撑件105的表面成角度θa(图1B)。根据一个实施方式，角度θa为约20°至约30°。
图2A和图2B图图示根据一个实施方式的具有两个线性舵和一个线性舵的注入锥200的示意图。如图2A中所示，注入锥200A包括主体201、底表面202和两个线性舵220。如图2B中所示，注入锥200B包括主体201、底表面202和线性舵220。尽管在图2A中所示的实施方式中仅显示两个线性舵220，且在图2B中所示的实施方式中显示一个线性舵220，应当理解，注入锥200中可包括任意数量的线性舵220。主体201和(多个)线性舵220可由石英或对反应物气体非反应性的任何其他材料制成。注入锥200被划分线215划分为第一部分231和第二部分230，其中划分线平行于x方向。线性舵220设置在第一部分231中。第一部分231和第二部分230可为两个分开的件，这两个件组合以制造注入锥200，或者第一部分和第二部分可由同一件制成。注入锥200耦接到进口160，且进口将反应气体输送到注入锥。注入锥200配置成将反应气体输送到基板110。尽管描绘了注入锥200从图1D中的一个方向朝向基板支撑系统170开放，但是还可想到注入锥200可从其他方向朝向基板支撑系统170开放。特别地，图2A和图2B中所描绘的注入锥200可围绕X轴线翻转和/或围绕基板支撑系统170在任何位置处旋转。
注入锥200被分隔线210划分为顶部分232和底部分233，其中分隔线210平行于y方向。根据一个实施方式，线性舵220(例如，图2A)或线性舵220(例如，图2B)各自以使得反应气体大部分或完全流动通过注入锥200的顶部分232的方式设置和倾斜。在可与本文描述的其他实施方式结合的一些实施方式中，如图2B中所示，舵设置在顶部分232中。根据一个实施方式，注入锥200的分隔线210与基板支撑件105的分隔线117平行。若允许反应物气体流动通过注入锥200的底部分233，则大部分的反应物气体会错过大部分的基板区域，并且保持未反应或被吸入排放装置120中，浪费了反应物气体并且造成在基板的设置在较低生长部分115上方的部分上的不均匀膜生长。另外，没有舵的注入锥呈现出喷射流状的流，其中流集中在一条窄流中。本文公开的注入锥200允许流150在宽得多的区域中散布，同时仍聚焦在较高生长部分116上。
通过注入锥200的顶部分232的流150允许膜110f的生长大部分或全部在基板110的设置在基板支撑件105的较高生长部分116上方的部分上。另外，由于线性舵220所致的增加的反应物气体的循环使反应气体与基板110的反应速率增大，带来更快的膜110f生长。线性舵220设置为使得在较高生长部分116上方的反应物气体的整体(integrated)速度(相对于较高生长部分116的区域)尽可能高，同时在较高生长部分116中，整体速度仍然尽可能均匀。线性舵220允许比其他舵形状(诸如楔形之类)更高的流150的速度。
线性舵220可以任何布置设置在注入锥200的第一部分231内。线性舵220相对于底表面202具有角度θ。根据一些实施方式，线性舵220的每一个线性舵可具有相同的角度θ或不同的角度。根据一些实施方式，角度θ从约5°至约85°变化，诸如从约10°至约40°、诸如从约25°至约55°，或从约35°至约45°。在一些实施方式中，存在具有端部220E的单个线性舵，根据一个实施方式，端部220E与底表面202分隔约15mm至约60mm的距离。根据一个实施方式，线性舵220的端部220E与划分线215分隔约35mm至约45mm的距离。在可与本文描述的其他实施方式结合的一些实施方式中，如图2B中所示，舵220的端部220E与底表面202分隔约12mm至约50mm的距离，诸如约12mm至约40mm、诸如约25mm至约40mm。在顶表面201与底表面202之间的总最大距离小于80mm，诸如约60mm至约75mm。根据一个实施方式，复数个线性舵220中的线性舵的长度为从约25mm至约75mm。根据一个实施方式，复数个线性舵220设置为使得从注入锥200出来的反应物气体的流150具有约100或更小的雷诺数(Re)，并且流是层流的。
图3是根据一个实施方式的用于输送反应气体的方法300操作的流程图。尽管结合图1A-图1D和图3描述方法300的操作，但是本领域技术人员将理解，配置成以任何顺序执行方法操作的任何系统都落入本文所述的实施方式的范围内。图1A-图1B图示方法300开始之前的处理系统100。
方法300在操作310处开始，在此操作中，反应物气体流动通过进口160。反应物气体可为上述的任何反应物气体。
在操作320处，反应物气体流动通过注入锥200。注入锥200可为上述实施方式中的任一个。根据一个实施方式，反应物气体的流150仅通过注入锥200的顶部分232输送。根据一个实施方式，反应物气体的流150是层流。根据一个实施方式，通过注入锥200的反应物气体的流150具有约100或更小的Re。
在操作330处，反应物气体被输送到基板110的表面。如上所述，反应物气体与基板110的表面反应。可将基板110从约23℃的温度加热到约1200℃。可输送反应物气体，使得反应物气体使膜110f在基板110的设置在基板支撑件105的较高生长部分116上方的部分上生长。根据一个实施方式，膜110f形成物的体积的约60％至约90％或更多设置在较高生长部分116中。在一些实施方式中，在执行操作310、320、330的同时，基板110连续旋转。图1C图示膜110f已经沉积在基板110的设置在基板支撑件105的较高生长部分116上方的部分上之后的处理系统100。
在可选的操作340处，使基板110旋转约180°，使得膜110f设置于基板110的设置在基板支撑件的新的较低生长部分115'上方的部分上方，而基板的没有膜生长的部分设置在基板支撑件的较高生长部分116上方。重复操作310、320和330，使得膜110’在设置在基板支撑件105的新的较高生长部分116’上方的基板110上生长，这造成膜110f、110f’在整个基板110上方的均匀膜生长。在其他实施方式中，反应气体的第二输送可包括不同的气体，且因此膜110f、110f’可包括不同的材料。图1D图示膜110f、110f’已经沉积在基板110上之后的处理系统100。
如上所述，提供一种处理系统。处理系统包括基板支撑系统、注入锥和进口。注入锥包括一个或多个线性舵。线性舵设置为使得反应物气体通过注入锥的流造成在基板的特定部分的膜生长。方法包括使气体流动通过注入锥并且将气体输送到下方的基板上。
反应物气体的局部化(和因此的膜生长)允许在基板的特定部分上的膜生长。可旋转基板，和/或重复工艺，从而造成具有改善均匀性的膜层的逐段或连续生长。
尽管前述内容涉及本公开内容的实施方式，但是在不背离本公开内容的基本范围的情况下，可设计本公开内容的其他和进一步的实施方式，且本公开内容的范围由所附的权利要求书确定。
Claims (20)
1.一种注入锥，包含：
主体，包含：
第一部分，配置成输送反应物气体，所述第一部分包含：
底表面；和
线性舵；和
第二部分，配置成接收所述反应物气体，所述第一部分和所述第二部分由划分线分隔。
2.如权利要求1所述的注入锥，其中每个线性舵与平行于所述底表面的轴线所成的角度为从约10°至约40°。
3.如权利要求2所述的注入锥，其中每个线性舵与所述底表面所成的所述角度为从约20°至约30°。
4.如权利要求1所述的注入锥，其中所述线性舵的长度为约25mm至约75mm。
5.如权利要求4所述的注入锥，其中所述注入锥通过注入分隔线被分隔成顶部分和底部分，其中所述线性舵设置在所述注入锥的所述顶部分中。
6.如权利要求1所述的注入锥，其中所述线性舵的端部设置成距所述底表面约12mm至约40mm。
7.一种处理系统，包含：
基板支撑系统，包含基板支撑件；
注入锥，包含：
主体，包含：
第一部分，配置成朝向所述基板支撑件的较高生长部分输送反应物气体，所述第一部分包含：
底表面；
线性舵；和
第二部分，配置成接收所述反应物气体；和
进口，耦接到所述注入锥，所述进口配置成将所述反应物气体输送至所述注入锥。
8.如权利要求7所述的处理系统，其中所述注入锥通过注入分隔线被分隔成顶部分和底部分，所述处理系统配置成仅通过所述注入锥的所述顶部分输送反应物气体。
9.如权利要求8所述的处理系统，其中所述基板支撑件被支撑件分隔线划分为所述较高生长部分和较低生长部分，且所述支撑件分隔线平行于所述注入分隔线。
10.如权利要求9所述的处理系统，其中所述支撑件分隔线将所述较高生长部分和所述较低生长部分分隔，使得所述较高生长部分和所述较低生长部分各自具有大约相等的面积。
11.如权利要求7所述的处理系统，其中所述注入锥设置成使得所述注入锥与所述基板支撑件的边缘成角度，其中所述角度为从约20°至约30°。
12.一种输送反应物气体的方法，所述方法包含以下步骤：
使所述反应物气体流动通过进口；
使所述反应物气体流动通过注入锥，所述注入锥包含：
主体，包含：
第一部分，配置成输送所述反应物气体，所述第一部分包含：
底表面；和
线性舵；和
第二部分，配置成接收所述反应物气体；和
将所述反应物气体输送到设置在基板支撑件上方的基板的表面，使得在所述基板的所述表面上形成膜。
13.如权利要求12所述的方法，其中所述注入锥通过划分线被分隔成顶部分和底部分，所述注入锥配置成仅通过所述注入锥的所述顶部分输送反应气体。
14.如权利要求13所述的方法，其中所述基板被分隔线划分为较高生长部分和较低生长部分，并且大于约60％的膜形成发生在所述基板的所述较高生长部分上。
15.如权利要求14所述的方法，其中所述分隔线平行于所述划分线。
16.如权利要求13所述的方法，其中所述反应物气体通过所述注入锥的流为层流。
17.如权利要求16所述的方法，其中所述反应物气体通过所述注入锥的所述流的雷诺数(Re)为约100或更小。
18.如权利要求12所述的方法，其中每个线性舵与所述底表面所成的角度为从约10°至约40°。
19.如权利要求12所述的方法，其中在所述方法期间，使所述基板连续地旋转。
20.如权利要求12所述的方法，进一步包含以下步骤：在输送所述反应物气体之后，使所述基板旋转约180°，并且重复使所述反应物气体流动通过进口、使所述反应物气体流动通过注入锥和输送所述反应物气体。
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| Application Number | Priority Date | Filing Date | Title |
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| US201962897900P | 2019-09-09 | 2019-09-09 | |
| US62/897,900 | 2019-09-09 | ||
| US16/776,204 US11486038B2 (en) | 2019-01-30 | 2020-01-29 | Asymmetric injection for better wafer uniformity |
| US16/776,204 | 2020-01-29 | ||
| PCT/US2020/049853 WO2021050489A1 (en) | 2019-09-09 | 2020-09-09 | Processing system and method of delivering a reactant gas |
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| CN114599816A true CN114599816A (zh) | 2022-06-07 |
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| JP (1) | JP7376693B2 (zh) |
| KR (1) | KR20220061191A (zh) |
| CN (1) | CN114599816A (zh) |
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| WO2021050489A8 (en) | 2022-05-05 |
| US20220411927A1 (en) | 2022-12-29 |
| JP7376693B2 (ja) | 2023-11-08 |
| TW202125673A (zh) | 2021-07-01 |
| JP2022547508A (ja) | 2022-11-14 |
| KR20220061191A (ko) | 2022-05-12 |
| WO2021050489A1 (en) | 2021-03-18 |
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