TW202106865A - 洗淨劑組成物、基板之洗淨方法及支撐體或基板之洗淨方法 - Google Patents
洗淨劑組成物、基板之洗淨方法及支撐體或基板之洗淨方法 Download PDFInfo
- Publication number
- TW202106865A TW202106865A TW109116863A TW109116863A TW202106865A TW 202106865 A TW202106865 A TW 202106865A TW 109116863 A TW109116863 A TW 109116863A TW 109116863 A TW109116863 A TW 109116863A TW 202106865 A TW202106865 A TW 202106865A
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- mass
- parts
- detergent composition
- organic solvent
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 165
- 239000000203 mixture Substances 0.000 title claims abstract description 114
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 6
- 238000004140 cleaning Methods 0.000 title claims description 33
- 238000000034 method Methods 0.000 title claims description 22
- 239000003960 organic solvent Substances 0.000 claims abstract description 49
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 30
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 26
- 239000000853 adhesive Substances 0.000 claims abstract description 18
- 230000001070 adhesive effect Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract 2
- 239000003599 detergent Substances 0.000 claims description 69
- 239000010410 layer Substances 0.000 claims description 59
- 239000012790 adhesive layer Substances 0.000 claims description 53
- -1 polysiloxane Polymers 0.000 claims description 30
- 238000005406 washing Methods 0.000 claims description 13
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 claims description 6
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 4
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 4
- 150000005621 tetraalkylammonium salts Chemical class 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 25
- 238000000227 grinding Methods 0.000 description 20
- 125000003342 alkenyl group Chemical group 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- VEPTXBCIDSFGBF-UHFFFAOYSA-M tetrabutylazanium;fluoride;trihydrate Chemical compound O.O.O.[F-].CCCC[N+](CCCC)(CCCC)CCCC VEPTXBCIDSFGBF-UHFFFAOYSA-M 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 229920006136 organohydrogenpolysiloxane Polymers 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229920001187 thermosetting polymer Polymers 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- CEBKHWWANWSNTI-UHFFFAOYSA-N 2-methylbut-3-yn-2-ol Chemical compound CC(C)(O)C#C CEBKHWWANWSNTI-UHFFFAOYSA-N 0.000 description 2
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 description 2
- SGVYKUFIHHTIFL-UHFFFAOYSA-N Isobutylhexyl Natural products CCCCCCCC(C)C SGVYKUFIHHTIFL-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 125000000129 anionic group Chemical group 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- VKPSKYDESGTTFR-UHFFFAOYSA-N isododecane Natural products CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 description 2
- 150000003017 phosphorus Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000013464 silicone adhesive Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- KJDMMCYMVUTZSN-UHFFFAOYSA-N (1-ethynylcyclohexyl)oxy-trimethylsilane Chemical compound C[Si](C)(C)OC1(C#C)CCCCC1 KJDMMCYMVUTZSN-UHFFFAOYSA-N 0.000 description 1
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 description 1
- VMAWODUEPLAHOE-UHFFFAOYSA-N 2,4,6,8-tetrakis(ethenyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound C=C[Si]1(C)O[Si](C)(C=C)O[Si](C)(C=C)O[Si](C)(C=C)O1 VMAWODUEPLAHOE-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- ZCTILCZSUSTVHT-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-yloxy(trimethyl)silane Chemical compound CC(C)CC(C)(C#C)O[Si](C)(C)C ZCTILCZSUSTVHT-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001462 antimony Chemical class 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- NFCHUEIPYPEHNE-UHFFFAOYSA-N bis(2,2-dimethylbut-3-ynoxy)-dimethylsilane Chemical compound C#CC(C)(C)CO[Si](C)(C)OCC(C)(C)C#C NFCHUEIPYPEHNE-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 150000001924 cycloalkanes Chemical group 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical compound CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- BDUPRNVPXOHWIL-UHFFFAOYSA-N dimethyl sulfite Chemical compound COS(=O)OC BDUPRNVPXOHWIL-UHFFFAOYSA-N 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- 229920005645 diorganopolysiloxane polymer Polymers 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000006038 hexenyl group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QXLPXWSKPNOQLE-UHFFFAOYSA-N methylpentynol Chemical compound CCC(C)(O)C#C QXLPXWSKPNOQLE-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 125000002467 phosphate group Chemical class [H]OP(=O)(O[H])O[*] 0.000 description 1
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical class OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000004053 quinones Chemical class 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 description 1
- HQFTZNVQVRRDLN-UHFFFAOYSA-M tetramethylazanium;fluoride;tetrahydrate Chemical compound O.O.O.O.[F-].C[N+](C)(C)C HQFTZNVQVRRDLN-UHFFFAOYSA-M 0.000 description 1
- MYXKPFMQWULLOH-UHFFFAOYSA-M tetramethylazanium;hydroxide;pentahydrate Chemical compound O.O.O.O.O.[OH-].C[N+](C)(C)C MYXKPFMQWULLOH-UHFFFAOYSA-M 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- JNRUXZIXAXHXTN-UHFFFAOYSA-N trimethyl(2-methylbut-3-yn-2-yloxy)silane Chemical compound C#CC(C)(C)O[Si](C)(C)C JNRUXZIXAXHXTN-UHFFFAOYSA-N 0.000 description 1
- NWMVPLQDJXJDEW-UHFFFAOYSA-N trimethyl(3-methylpent-1-yn-3-yloxy)silane Chemical compound CCC(C)(C#C)O[Si](C)(C)C NWMVPLQDJXJDEW-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3902—Organic or inorganic per-compounds combined with specific additives
- C11D3/3905—Bleach activators or bleach catalysts
- C11D3/3907—Organic compounds
- C11D3/3917—Nitrogen-containing compounds
- C11D3/3927—Quarternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/28—Organic compounds containing halogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
本發明之洗淨劑組成物係用以去除存在於基板上之含有聚矽氧化合物之暫時接著材所用之洗淨劑組成物,上述洗淨劑組成物含有(A)有機溶劑:75~99質量份、(B)水:0~5質量份、及(C)銨鹽:1~20質量份(但(A)+(B)+(C)=100質量份),上述有機溶劑不含有具有羥基之有機溶劑,上述有機溶劑100質量份中,含有50質量份以上之具有雜原子之有機溶劑,上述銨鹽含有氫氧化物離子、氟化物離子及氯化物離子中之至少1種。
Description
本發明有關洗淨劑組成物、基板之洗淨方法及支撐體或基板之洗淨方法。
為了實現更進一步之高密度、大容量化,3次元之半導體安裝成為必須。所謂3次元安裝技術,係將1個半導體晶片薄型化,進而藉由矽貫通電極(TSV:through silicon via)將該等連結並多層層合之半導體製作技術。為了實現其,將形成半導體電路之基板藉由非電路形成面(亦稱為「背面」)研削而薄型化,進而於背面進行包含TSV之電極形成的步驟為必要。
以往,矽基板之背面研削步驟中,於研削面之相反側貼上保護膠帶,防止研削時之基板破損。然而,該膠帶之支撐基材係使用有機樹脂薄膜,具有柔軟性,但相反地,強度或耐熱性不充分,不適於進行TSV形成步驟或於背面之配線層形成步驟。
因此提案有將半導體基板經由接著劑接合於矽、玻璃等之支撐體,藉此於背面研削、TSV或背面電極形成步驟中可充分耐受之系統。此時重要的是將基板接合於支撐體之際的接著層。其必須可無間隙地將基板接合於支撐體,及僅耐受隨後步驟之充分耐久性。再者,最後必須能自支撐體簡便地剝離薄型晶圓。又,該接著層由於最後剝離,故本說明書中稱為「暫時接著層」。
支撐體剝離後,於形成半導體電路之基板表面有殘存暫時接著層之一部分的情況。通常該殘存之暫時接著層係藉由洗淨液洗淨去除。專利文獻1中記載此等洗淨液,亦即基板表面之洗淨用之洗淨劑組成物。該洗淨劑組成物含有(A)四級銨鹽:0.1~2.0質量%,(B)水:0.1~4.0質量%及(C)分子中含有至少1個以上羥基之有機溶劑:94.0~99.8質量%。
[先前技術文獻]
[專利文獻]
[專利文獻1] 日本特開2015-7217號公報
[發明欲解決之課題]
然而,專利文獻1中記載之洗淨液,對於殘存於基板表面之暫時接著層之洗淨力尚有改善餘地。
本發明係鑑於上述情況而完成者,其目的在於提供對於殘存於基板表面之暫時接著層之洗淨力優異之洗淨劑組成物。
[用以解決課題之手段]
為了解決上述課題,達成目的,本發明之洗淨劑組成物係為了去除基板上存在之含有矽氧化合物之暫時接著材所用之洗淨劑組成物,上述洗淨劑組成物含有(A)有機溶劑:75~99質量份、(B)水:0~5質量份、及(C)銨鹽:1~20質量份(但(A)+(B)+(C)=100質量份),上述有機溶劑不含有具有羥基之有機溶劑,上述有機溶劑100質量份中,含有50質量份以上之具有雜原子之有機溶劑,前述銨鹽含有氫氧化物離子、氟化物離子及氯化物離子中之至少1種。
上述有機溶劑較佳包含選自由丙二醇單甲醚乙酸酯、二甲基亞碸、乙酸丁酯及環戊酮所成之群中之至少1種。
上述銨鹽較佳包含四烷基銨鹽。
上述銨鹽較佳包含含有氟化物離子之銨鹽。
本發明之基板之洗淨方法包含下述步驟:自具備支撐體、形成於該支撐體上之暫時接著層、及以具有電路面之表面對向於該暫時接著層之方式層合之基板的基板層合體,剝離上述支撐體,藉由上述洗淨劑組成物洗淨去除上述基板上殘存之上述暫時接著層。
本發明之支撐體或基板之洗淨方法包含下述步驟:於支撐體或基板上形成暫時接著層,藉由上述洗淨劑組成物洗淨去除該暫時接著層之一部分。
[發明效果]
依據本發明,可提供對於殘存於基板表面之暫時接著層之洗淨力優異之洗淨劑組成物。
以下更詳細說明本發明。
<洗淨劑組成物>
實施形態之洗淨劑組成物係為了去除基板上存在之含有矽氧化合物之暫時接著材(矽氧系接著劑)所用之洗淨劑組成物(基板用暫時接著材之洗淨液)。上述洗淨劑組成物含有(A)有機溶劑:75~99質量份、(B)水:0~5質量份、及(C)銨鹽:1~20質量份。但上述(A)成分、(B)成分及(C)成分之合計為100質量份。上述有機溶劑不含有具有羥基之有機溶劑,上述有機溶劑100質量份中,含有50質量份以上之具有雜原子之有機溶劑,上述銨鹽含有氫氧化物離子、氟化物離子及氯化物離子中之至少1種。
為了進行形成有半導體電路之基板的背面研削步驟等,例如將基板及支撐體經由包含基板用暫時接著材之暫時接著層予以接合。基板用暫時接著材具體使用矽氧系接著劑。背面研削步驟等結束後,剝離支撐體時,有於基板表面殘存有構成暫時接著層之基板用暫時接著材之一部分的情況。實施形態之洗淨劑組成物適合使用於此等基板表面上殘存之基板用暫時接著材之洗淨。若使用實施形態之洗淨劑組成物進行洗淨,則可充分去除上述殘存之基板用暫時接著材(亦即矽氧系接著劑)。其理由係實施形態之洗淨劑組成物中,組合使用含有氫氧化物離子、氟化物離子及氯化物離子中之至少1種之銨鹽、與不含有具有羥基之有機溶劑且含有50質量份以上之具有雜原子之有機溶劑的有機溶劑。又,當然,實施形態之洗淨劑組成物不限定於利用背面研削步驟而薄型化之基板,可適合於洗淨基板表面上殘存之基板用暫時接著材。
實施形態之洗淨劑組成物中,(A)成分中不含有具有羥基之有機溶劑。含有具有羥基之有機溶劑之情況,有洗淨性降低之虞。且,(A)成分中含有具有雜原子之有機溶劑(不具有羥基且具有雜原子之有機溶劑)。作為雜原子,舉例為例如氧原子。作為(A)成分中之具有上述雜原子之有機溶劑,舉例為丙二醇單甲醚乙酸酯(PGMEA)、二甲基亞碸(DMSO)、乙酸丁酯、環戊酮等。其中,較佳為DMSO、乙酸丁酯。上述具有雜原子之有機溶劑可單獨使用1種,亦可併用2種以上。
又,(A)成分100質量份中,上述具有雜原子之有機溶劑含有50質量份以上。(A)成分中,亦可含有上述具有雜原子之有機溶劑以外之有機溶劑(不具有羥基且不具有雜原子之其他有機溶劑)作為上述具有雜原子之有機溶劑之其餘部分。作為上述其他有機溶劑,舉例為均三甲苯等。上述其他有機溶劑可單獨使用1種,亦可併用2種以上。且,實施形態之洗淨劑組成物較佳僅含有上述具有雜原子之有機溶劑作為有機溶劑。
作為(B)成分係使用水。尤其藉由含有少量水,而提高洗淨劑組成物之經時安定性。又,水係直接調配於洗淨劑組成物中,或使用將有機溶劑水溶液化者亦無妨。且,如後述(C)成分之銨鹽以水合物調配時,源自該水合物之水亦可作為(B)成分使用。
又,實施形態之洗淨劑組成物中,(C)成分之銨鹽含有氫氧化物離子、氟化物離子或氯化物離子。上述銨鹽較佳含有鹵化銨鹽或四烷基銨鹽。進而,(C)成分之銨鹽更佳包含含有氟化物離子之銨鹽,更佳包含含有氟化物離子之四烷基銨鹽。該情況下,基板洗淨性特別優異。又,作為烷基,較佳為碳數1~5之直鏈狀或分支狀烷基。作為上述銨鹽具體舉例為氟化銨、氟化四甲基銨、氟化四丁基銨等。上述銨鹽可單獨使用1種,亦可併用2種以上。且調製實施形態之洗淨劑組成物之際,上述銨鹽可作為水合物調配。該情況下,源自該水合物之銨鹽(無水部分)亦可作為上述洗淨劑組成物之(C)成分。
實施形態之洗淨劑組成物中,(A)成分含量為75~99質量份,(B)成分含量為0~5質量份,(C)成分含量為1~20質量份。此處上述(A)成分、(B)成分及(C)成分之含量合計為100質量份。添加(B)成分之際,較佳(A)成分含量為75質量份以上且未達99質量份,(B)成分含量超過0質量份且5質量份以下,(C)成分含量為1~20質量份。又,更佳(A)成分含量為81~96.9質量份,(B)成分含量為0.1~4質量份,(C)成分含量為3~15質量份。藉由設為該範圍之含量,可獲得洗淨時間較短,且對基板等之損傷較少之優點。又,調製實施形態之洗淨劑組成物之際,上述銨鹽作為水合物調配時,源自該水合物之銨鹽(無水部分)之量包含於(C)成分之含量。又,源自該水合物之水量包含於(B)成分之含量。
又,實施形態之洗淨劑組成物亦可含有界面活性劑、螯合劑、抗氧化劑、防鏽劑、消泡劑、pH調整劑、芳香族化合物作為其他成分。尤其作為界面活性劑,可為非離子、陰離子、陽離子之任一者,但舉例為聚醚系之非離子界面活性劑。其他成分可單獨使用1種,亦可併用2種以上。其他成分例如於添加時,相對於上述(A)成分及(B)成分及(C)成分之合計100質量份,可分別以0.01~10質量份之量含有。
實施形態之洗淨劑組成物之調製方法並未特別限定。實施形態之洗淨劑組成物例如可混合上述成分而得。混合上述成分之順序並未特別限定。
實施形態之洗淨劑組成物較佳引火點為21℃以上。引火點為上述範圍內時,可安全地進行上述洗淨劑組成物之洗淨。
<基板之洗淨方法>
實施形態之基板之洗淨方法包含下述步驟:自具備支撐體、形成於該支撐體上之暫時接著層、及以具有電路面之表面對向於該暫時接著層之方式層合之基板的基板層合體,剝離前述支撐體,藉由上述洗淨劑組成物洗淨去除上述基板上殘存之上述暫時接著層。若使用上述洗淨劑組成物,則可充分去除上述基板上殘存之上述暫時接著層(亦即構成暫時接著層之矽氧系接著劑中殘存於基板上之矽氧系接著劑)。
實施形態之基板之洗淨方法具體而言包含下述步驟:(a)準備基板層合體之步驟,(b)研削或研磨基板層合體之基板背面的步驟,(c)對基板背面實施加工之步驟,(d)自基板層合體剝離支撐體之步驟,(e)藉由上述洗淨劑組成物洗淨基板表面之步驟。此處,針對藉由使熱硬化性有機聚矽氧烷之未硬化組成物層硬化之硬化層(A)形成暫時接著層之情況加以說明。
[步驟(a)]
步驟(a)係準備基板層合體之步驟。圖1係用以說明基板層合體之圖。圖1顯示基板層合體10之剖面圖,基板層合體10具備支撐體1、形成於該支撐體1上之暫時接著劑層2及以具有電路面之表面對向於該暫時接著層2之方式層合之基板3。
步驟(a)中,具體而言,於表面具有電路形成面,於背面具有電路非形成面之基板之電路形成面經由暫時接著層(硬化層(A))接合於支撐體。步驟(a)更具體而言包含下述步驟:(a-1)於支撐體上層合作為矽氧系接著劑之熱硬化性有機聚矽氧烷、熱塑性有機聚矽氧烷之未硬化組成物層之步驟,(a-2)經由未硬化組成物層使支撐體與基板貼合之步驟,(a-3)使未硬化組成物層熱硬化作成硬化層(A)之步驟。此處,步驟(a-1)可為於基板上層合未硬化組成物層之步驟(a-1’),步驟(a-2)可為經由步驟(a-1’)所得之未硬化組成物層將基板與支撐體貼合之步驟(a-2’)。
步驟(a-1)或(a-1’)中,層合未硬化組成物層之際,亦可使用未硬化組成物之薄膜。或者,未硬化組成物之溶液可藉由旋轉塗佈、狹縫塗佈、噴霧塗佈等而層合。較佳藉由旋轉塗佈而層合。該情況下,通常旋轉塗佈後,對應於未硬化組成物所含之溶劑的揮發條件,於80℃以上250℃以下,較佳100℃以上230℃以下之溫度進行預烘烤。
又,步驟(a-1)或(a-1’)中,未硬化組成物層較佳形成為膜厚為10μm以上150μm以下。若為10μm以上,則基板與支撐體可無間隙地貼合,可充分耐受後述之研削步驟。若為150μm以下,則可抑制後述之TSV形成步驟等之熱處理步驟之樹脂變形,實用上可耐受。
步驟(a-2)或(a-2’)中,例如於40℃以上250℃以下,較佳60℃以上200℃以下,於減壓下,均一壓著基板,使支撐體與基板貼合。貼合之際可使用市售之晶圓接合裝置,例如EVG公司製EVG520IS、850TB(商品名)、SUSS公司製XBC300(商品名)、東京電子股份有限公司製SynapseV(商品名)等。
步驟(a-3)中,例如於120℃以上250℃以下,較佳140℃以上200℃以下,加熱未硬化組成物層10分鐘以上4小時以下,較佳30分鐘以上2小時以下,而進行熱硬化性有機聚矽氧烷之硬化。
步驟(a)中所用之基板通常為半導體晶圓。作為半導體晶圓舉例為矽晶圓、鍺晶圓、鎵-砷晶圓、鎵-磷晶圓、鎵-砷-鋁晶圓。晶圓厚度並未特別限定,但典型上為600μm以上800μm以下,更典型為625μm以上775μm以下。
且,作為步驟(a)所用之支撐體舉例為矽晶圓、玻璃板、石英晶圓等基板。
此處,針對步驟(a)所用之特別是熱硬化性有機聚矽氧烷之未硬化組成物及包含其硬化物之硬化層(A)更詳細說明。
(未硬化組成物)
未硬化組成物例如含有(A-1) 1分子中具有2個以上烯基之有機聚矽氧烷,(A-2) 1分子中具有2個以上鍵結於矽原子之氫原子(Si-H基)之有機氫聚矽氧烷,及(A-3)鉑系觸媒。此處,成分(A-2)中之Si-H基相對於成分(A-1)之烯基的莫耳比為0.3以上10以下。且,未硬化組成物亦可含有(A-4)有機溶劑或(A-5)反應控制劑。
成分(A-1)係1分子中具有2個以上烯基之有機聚矽氧烷。成分(A-1)例如係1分子中含有2個以上烯基之直鏈狀或分支狀之有機聚矽氧烷,或者具有以SiO4/2
表示之矽氧烷單位(Q單位)之樹脂構造的有機聚矽氧烷。成分(A-1)中較佳為1分子中含有0.6mol%以上9mol%以下(烯基莫耳數/Si莫耳數)之烯基的有機聚矽氧烷。
上述式中,R7
分別獨立為不具有脂肪族不飽和鍵之1價烴基,X分別獨立為含有烯基之1價有機基,a為0~3之整數,m、n係2a+m成為1分子中烯基含量成為0.6mol%以上9mol%以下之數。p、q係p+2成為1分子中烯基含量成為0.6mol%以上9mol%以下之數。e分別獨立為1~3之整數,b、c、d係(c+d)/b成為0.3~3.0,d/(b+c+d)成為0.01~0.6之數。
上述式中,作為R7
較好為碳原子數1~10之1價烴基。作為R7
,具體舉例為甲基、乙基、丙基、丁基等烷基;環己基等環烷基;苯基、甲苯基等芳基等。該等中,較佳為烷基或苯基。
作為X較佳為碳原子數2~10之有機基。作為X舉例為乙烯基、烯丙基、己烯基、辛烯基等烯基;丙烯醯基丙基、丙烯醯基甲基、甲基丙烯醯基丙基等(甲基)丙烯醯基烷基;丙烯醯氧基丙基、丙烯醯氧基甲基、甲基丙烯醯氧基丙基、甲基丙烯醯氧基甲基等(甲基)丙烯醯氧基烷基;環己烯基乙基、乙烯氧基丙基等。該等中,工業上較佳為乙烯基。
上述通式(1)中,a若為1~3,則分子鏈末端經烯基封端。藉由反應性良好之此分子鏈末端烯基,可於短時間完成反應而較佳。再者,工業上且就成本面而言,a=1較佳。該含有烯基之二有機聚矽氧烷之性狀較好為油狀或生橡膠狀。
上述式(3)顯示樹脂構造的有機聚矽氧烷。上述式(3)中,工業上且就成本面而言,e=1較佳。且,e之平均值與d/(b+c+d)之乘積較佳為0.02~1.50,更佳為0.03 ~1.0。該樹脂構造之有機聚矽氧烷較佳作為溶解於有機溶劑之溶液而使用。
(A-2)成分為交聯劑,係1分子中具有至少2個,較佳3個以上之鍵結於矽原子之氫原子(Si-H基)之有機氫聚矽氧烷。該有機氫聚矽氧烷為直鏈狀、分支狀或環狀。例如可使用1分子中具有至少2個,更佳2個以上100個以下,又更佳3個以上50個以下之鍵結於矽原子之氫原子(Si-H基)之直鏈狀、分支狀或環狀者。
成分(A-2)於25℃下之黏度較佳為1mPa・s以上5,000mPa・s以下,更佳為5mPa・s以上500mPa・s以下。該有機氫聚矽氧烷可單獨使用1種,亦可併用2種以上。
成分(A-2)期望以成分(A-2)中之Si-H基相對於成分(A-1)烯基的莫耳比(Si-H基/烯基)較佳為0.3以上10以下,更佳1.0以上8.0以下之量調配。該莫耳比若為0.3以上,則交聯密度不會過低,亦可使未硬化組成物層適度硬化。莫耳比若為10以下,則交聯密度不會過高,可獲得充分黏著力及觸黏。且,莫耳比若為10以下,則可增長未硬化組成物之可使用時間。
成分(A-3)係鉑系觸媒(亦即鉑族金屬觸媒)。作為鉑系觸媒舉例為氯化鉑酸、氯化鉑酸之醇溶液、氯化鉑酸與醇之反應物、氯化鉑酸與烯烴化合物之反應物、氯化鉑酸與含乙烯基之矽氧烷之反應物等。鉑系觸媒可單獨使用1種,亦可併用2種以上。
成分(A-3)期望以相對於成分(A-1)及成分(A-2)之合計,作為鉑族金屬分計(質量換算),較佳為1ppm以上5,000ppm以下,更佳為5ppm以上2,000ppm以下之量調配。若為1ppm以上,則未硬化組成物層之硬化性難以降低。因此,亦可抑制交聯密度降低,抑制保持力降低。若為5,000ppm以下,則可增長未硬化組成物之可使用時間。
(A-4)成分為有機溶劑。作為有機溶劑,若為可溶解未硬化組成物之成分,則未特別限制。作為有機溶劑,可舉例為例如戊烷、己烷、環己烷、異辛烷、壬烷、癸烷、對-薄荷烷、蒎烯、異十二烷、檸檬烯等烴系溶劑或矽氧系溶劑。有機溶劑可單獨使用1種,亦可併用2種以上。
使用成分(A-4)時,成分(A-4)期望以相對於成分(A-1)及成分(A-2)之合計100質量份,較佳為10質量份以上900質量份以下,更佳25質量份以上400質量份以下,又更佳為40質量份以上300質量份以下之量調配。
(A-5)成分係反應控制劑。依據反應控制劑,於調合未硬化組成物之際,或未硬化組成物塗佈於基材之際,可抑制加熱硬化前之未硬化組成物之增黏或凝膠化。
作為反應控制劑,舉例為例如3-甲基-1-丁炔-3-醇、3-甲基-1-戊炔-3-醇、3,5-二甲基-1-己炔-3-醇、1-乙炔基環己醇、3-甲基-3-三甲基矽氧基-1-丁炔、3-甲基-3-三甲基矽氧基-1-戊炔、3,5-二甲基-3-三甲基矽氧基-1-己炔、1-乙炔基-1-三甲基矽氧基環己烷、雙(2,2-二甲基-3-丁炔氧基)二甲基矽烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、1,1,3,3-四甲基-1,3-二乙烯基二矽氧烷等。該等中,較佳為1-乙炔基環己醇及3-甲基-1-丁炔-3-醇。反應控制劑可單獨使用1種,亦可併用2種以上。
使用成分(A-5)時,成分(A-5)期望以相對於成分(A-1)及成分(A-2)之合計100質量份,較佳為0.01質量份以上8.0質量份以下,更佳為0.05質量份以上2.0質量份以下之量調配。若為8.0質量份以下,則未硬化組成物之硬化性難以降低。若為0.01質量份以上,則充分發揮反應控制效果。
又,未硬化組成物亦可含有其他成分。作為其他成分可舉例為氧化矽等填料;聚二甲基矽氧烷、聚二甲基二苯基矽氧烷等非反應性聚有機矽氧烷;酚系、醌系、胺系、磷系、亞磷酸酯系、硫系、硫醚系等之抗氧化劑;三唑系、二苯甲酮系等之光安定劑;磷酸酯系、鹵系、磷系、銻系等之難燃劑;陽離子活性劑、陰離子活性劑、非離子系活性劑等抗靜電劑等。該其他成分可單獨使用1種,亦可併用2種以上。
該其他成分係以不阻礙本發明目的之範圍調配。例如為了提高耐熱性,而使用填料之情況,填料相對於成分(A-1)及成分(A-2)之合計100質量份,較佳以50質量份以下之量調配。
(硬化層(A))
硬化層(A)如上述係使未硬化組成物層硬化所得,包含未硬化組成物之硬化物。
層合於支撐體之硬化層(A)自支撐體界面剝離之際的剝離力為例如10mN/25mm以上500mN/25mm以下,較佳為30mN/25mm以上500mN/25mm以下,更佳為50mN/25mm以上200mN/25mm以下。此處,剝離力係於25mm寬試驗片以5mm/秒上拉剝離之180°剝離試驗中所得之剝落剝離力。若為10mN/25mm以上,則可抑制後述加工步驟等中之剝離。若為500mN/25mm以下,則可容易將硬化物層(A)自支撐體剝離。
又,層合於基板之硬化層(A)自基板界面剝離之際的剝離力為例如50mN/25mm以上1000mN/25mm以下,較佳為70mN/25mm以上1000mN/25mm以下,更佳為80mN/25mm以上500mN/25mm以下。此處,剝離力係於25mm寬試驗片以5mm/秒上拉剝離之180°剝離試驗中所得之剝落剝離力。若為50mN/25mm以上,則可抑制後述加工步驟等中之剝離。尤其即使通過高溫製程亦難以產生剝離。若為1000mN/25mm以下,則可容易利用膠帶將硬化物層(A)自基板剝離。
硬化層(A)所含之硬化物較好以0.001莫耳%以上60.000莫耳%以下之以R1
R2
R3
SiO1/2
表示之矽氧烷單位(M單位)、10.000莫耳%以上99.999莫耳%以下之以R4
R5
SiO2/2
表示之矽氧烷單位(D單位)、0.000莫耳%以上0.005莫耳%以下之以R6
SiO3/2
表示之矽氧烷單位(T單位)、0.000莫耳%以上60.000莫耳%以下之以SiO4/2
表示之矽氧烷單位(Q單位)之量含有。且更佳以M單位為0.001莫耳%以上35.000莫耳%以下,D單位為30.000莫耳%以上99.999莫耳%以下,T單位為0.000莫耳%以上0.001莫耳%以下,Q單位為0.000莫耳%以上50.000莫耳%以下之含量含有。
此處,R1
、R2
、R3
、R4
、R5
及R6
係有機取代基,係非取代或取代之1價烴基。該烴基較佳為碳原子數1~10。作為烴基,具體舉例為甲基、乙基、正丙基、異丙基、正丁基、第三丁基、正戊基、環戊基、正己基等之烷基、環己基等之環烷基、苯基、甲苯基等之芳基,該等烴基之氫原子之一部分或全部經鹵原子取代之基。該等中,較佳為甲基及苯基。
且硬化層(A)於25℃下之儲存彈性模數較佳為1×106
Pa以上1×109
Pa以下。儲存彈性模數若為上述範圍內,則可充分耐受後述之研削步驟,可減小基板之翹曲。因此,於步驟中不易發生無法對應於裝置等之問題。
[步驟(b)]
步驟(b)係研削或研磨基板層合體之基板背面之步驟。步驟(b)係研削或研磨與支撐體接合之基板背面(電路非形成面)。藉此使基板厚度變薄。經薄型化之基板厚度典型上為5μm以上300μm以下,更典型為10μm以上100μm以下。研削加工方式並未特別限定,可藉習知方式進行。研削較好對基板及研磨石(金剛石等)施加水邊冷卻邊進行。作為研削加工基板背面之裝置舉例為例如DISCO股份有限公司製DAG-810 (商品名)等。又,亦可CMP研磨基板背面。
[步驟(c)]
步驟(c)係對基板背面實施加工之步驟。步驟(c)係對藉由步驟(b)之背面研削或背面研磨而薄型化之基板背面(電路非形成面)實施加工。該步驟包含以晶圓等級使用之各種製程。作為該步驟舉例為電極形成、金屬配線形成、保護膜形成等。更具體而言,舉例為用以形成電極等之金屬濺鍍、蝕刻金屬濺鍍層之濕蝕刻、用以成為金屬配線形成之遮罩之光阻劑塗佈、曝光及顯影之圖型形成、光阻劑之剝離、乾蝕刻、金屬鍍敷形成、用以形成TSV之矽蝕刻、矽表面之氧化膜形成等之以往習知之製程。又,亦包含將藉由切晶等而薄型化之晶圓切斷為晶片尺寸。
[步驟(d)]
步驟(d)係自基板層合體剝離支撐體之步驟。步驟(d)係自步驟(c)中經實施加工之基板層合體剝離支撐體。該剝離步驟一般在室溫至60℃左右之比較低溫條件實施。將基板層合體之基板或支撐體之一者預先水平固定,另一者以距水平方向具有一定角度拉起而進行。且亦可為於基板之研削面貼上保護薄膜,將基板與保護膜一體以剝離方式剝離。
該剝離方式具體而言包含(d-1)於實施加工之基板之加工面接著切晶膠帶之步驟,(d-2)於吸附面真空吸附切晶膠帶面之步驟,(d-3)於吸附面溫度為10℃至100℃之溫度範圍,將支撐體自基板掀離而剝離之步驟。該情況下,可容易自基板剝離支撐體,且可容易地進行隨後之切晶步驟。
藉由此等剝離步驟,有將支撐體與硬化層(A)一起自基板層合體剝離,僅獲得基板之情況,此外亦有僅自基板層合體剝離支撐體,獲得層合有硬化層(A)之基板之情況。後者之情況,進而自基板,例如藉由膠帶剝離而剝離硬化層(A),僅獲得基板。作為膠帶剝離所用之膠帶材較佳為使用矽氧系黏著材之膠帶。例如適宜使用寺岡製作所股份有限公司製聚酯薄膜黏著膠帶No.646S、No.648等。
[步驟(e)]
步驟(e)係藉由上述洗淨劑組成物洗淨基板表面之步驟。步驟(e)藉由上述洗淨劑組成物洗淨去除殘存於基板表面(電路形成面)之硬化層(A)(未硬化組成物之硬化物)。藉此,即使於步驟(d)中剝離支撐體及硬化層(A)後,亦可充分去除基板表面上一部分殘存之硬化層(A)。此等基板(薄型晶圓)適用於接續之3次元半導體安裝之製程。
洗淨可將基板浸漬於上述洗淨劑組成物而進行。浸漬時間為例如10秒以上30分鐘以下,較佳為30秒以上10分鐘以下左右。且,亦可於基板上噴霧上述洗淨劑組成物而進行。再者,亦可使用上述洗淨劑組成物以覆液進行洗淨,亦可進行振盪、超音波洗淨。進行洗淨之際,溫度為例如10℃以上50℃以下,較佳為20℃以上40℃以下。
又,針對洗淨後之基板,亦可藉由水洗或利用醇進行沖洗,使之乾燥。
上述實施形態之基板之洗淨方法,於步驟(a)中,使熱硬化性有機聚矽氧烷之未硬化組成物層硬化形成硬化層(A)作為暫時接著層。對於此,作為暫時接著層不限於硬化層(A),亦可使用由其他矽氧系接著劑所得之暫時接著層。又,硬化層(A)可為單層,但亦可設置2層以上之暫時接著層。硬化層(A)上之暫時接著層並未特別限定於矽氧系、丙烯酸系、酚系等。且,支撐體與基板之間亦可設置具有暫時接著層以外之功能之包含有機聚矽氧烷之層。具體而言,作為其他矽氧系接著劑,舉例為國際公開第2015/115060號、日本特開2012-144616號公報、日本特開2014-131004號公報中記載之矽氧系接著劑。任何情況下,若使用上述洗淨劑組成物,則可充分去除於基板表面殘存之暫時接著層。
又,上述實施形態之基板的洗淨方法,於步驟(d)中,亦可如上述剝離支撐體,支撐體之剝離可為光剝離、加熱剝離、溶劑剝離、機械剝離。任一情況下,若使用上述洗淨劑組成物,則均可充分去除於基板表面殘存之暫時接著層。
藉光剝離,通常於步驟(a)中,於基板層合體形成分離層。亦即,於支撐體與暫時接著層之間形成分離層。分離層若為例如可吸收介隔支撐體而照射之光並變質之習知材料,則未特別限定,但例如可自碳、芳香族烴化合物等形成。所謂變質意指分離層藉稍微之外力即被破壞之狀態,或與分離層接觸之層之接著力降低之狀態。其次,對於具有分離層之基板層合體進行如上述之步驟(b)及步驟(c)。其次,於步驟(d),藉由光剝離自基板層合體分離支撐體。此處,對於基板層合體,經由支撐體,照射自習知雷射所照射之光。此時,只要適當選擇能照射可使構成分離層之材料變質之波長的光的雷射即可。藉此,分離層變質,支撐體剝離。其次,步驟(e)中,藉由上述洗淨劑組成物,洗淨藉由光剝離所得之基板表面。
加熱剝離通常係於步驟(a)中,使用藉由加熱而接著力降低之矽氧系接著劑形成暫時接著層。其次,對於具有此等暫時接著層之基板層合體,進行如上述步驟(b)及(c)。其次,於步驟(d),藉由加熱剝離自基板層合體分離支撐體。其次,步驟(e)中,藉由上述洗淨劑組成物,洗淨藉由加熱剝離所得之基板表面。
溶劑剝離係於步驟(d)中,藉由溶劑剝離自基板層合體分離支撐體。此時,只要適當選擇可將構成暫時接著層之矽氧系接著劑溶解之溶劑即可,舉例為碳數4~20之烴、芳香族系、醚系等。其次,步驟(e)中,藉由上述洗淨劑組成物,洗淨藉由溶劑剝離所得之基板表面。
又,上述實施形態之基板之洗淨方法,於步驟(a)中,經由自1種未硬化組成物所成之暫時接著層將基板之電路形成面全面與支撐體接合。相對於此,為了調整支撐體與基板之接合力,亦可於基板表面之一部分形成第1暫時接著層,於基板表面之剩餘部分形成第2暫時接著層。亦即,第1暫時接著層與第2暫時接著層亦可覆蓋基板表面全面。為了獲得第1暫時接著層與第2暫時接著層之期望接合力,分別選擇適宜之矽氧系接著劑而形成。
再者,該情況下,形成暫時接著層之際,較佳使用上述洗淨劑組成物。首先於基板全面形成第1暫時接著層。其次,藉由上述洗淨劑組成物,將第1暫時接著層之不需要部分(形成第2暫時接著層之部分)進行邊緣切晶處理。若使用上述洗淨劑組成物,而可自基板上乾淨地去除第1暫時接著層之不需要部分。於該經邊緣切晶之部分形成第2暫時接著層。接著將基板之電路形成面,經由第1暫時接著層與第2暫時接著層,接合於支撐體。其次,步驟(b)中,研削或研磨具有第1暫時接著層與第2暫時接著層之基板層合體的基板背面。又,上述雖於基板上形成暫時接著層,但亦可於支撐體上形成暫時接著層。亦即,如此,實施形態之支撐體或基板之洗淨方法包含於支撐體或基板上形成暫時接著層,將該暫時接著層之一部分藉由上述洗淨劑組成物洗淨去除之步驟。
又,並未藉由上述實施形態限定本發明。適當組合上述各構成要素而構成者亦包含於本發明。且,進一步的效果或變化例可由熟知本技藝者容易導出。因此,本發明之更廣態樣並非由上述實施形態予以限定,而可有各種變更。
[實施例]
以下顯示實施例具體說明本發明,但本發明不限制於下述實施例。
[實施例1]
於二甲基亞碸90質量份中添加氟化四丁基銨3水合物10質量份,於室溫攪拌,獲得具有表1-1中記載之組成(質量份)之洗淨劑組成物A。亦即,所得洗淨劑組成物A包含二甲基亞碸90質量份、源自氟化四丁基銨3水合物的氟化四丁基銨8質量份、源自氟化四丁基銨3水合物的水2質量份。
[實施例2~11]
以具有表1-1、1-2中記載之各組成(質量份)之方式,於有機溶劑中添加銨鹽的水合物,於室溫攪拌獲得洗淨劑組成物B、C、D、E、F、G、H、I、J及K。又,所得之洗淨劑組成物I包含二甲基亞碸90質量份、源自氟化四甲基銨4水合物的氟化四甲基銨6質量份、源自氟化四甲基銨4水合物的水4質量份。
[比較例1~3]
以具有表1-2中記載之各組成(質量份)之方式,添加各成分,於室溫攪拌獲得洗淨劑組成物L、M及N。又,所得之洗淨劑組成物N包含1-丁氧基-2-丙醇95質量份、源自氫氧化四甲基銨5水合物的氫氧化四甲基銨2質量份、源自氫氧化四甲基銨5水合物的水2質量份,進而水1質量份。所得洗淨劑組成物L、M之組成如表1-2。
[比較例4]
於均三甲苯90質量份中,添加氟化四丁基銨3水合物10質量份,於室溫攪拌,獲得具有表1-2中記載之組成之洗淨劑組成物O。然而,氟化四丁基銨3水合物未完全溶解,無法獲得良好之洗淨劑組成物。
TBAF:氟化四丁基銨
TMAF:氟化四甲基銨
TMAH:氫氧化四甲基銨
DMSO:二甲基亞碸
PGMEA:丙二醇單甲醚乙酸酯
[實施例12]
首先,如下述調製樹脂溶液。
於兩末端及側鏈具有2.0莫耳%之乙烯基、分子末端以SiMe2
Vi基封端、藉由GPC測定之數平均分子量(Mn)為5萬之聚二甲基矽氧烷100質量份及異十二烷400質量份所成之溶液中添加混合下述式(M-1)表示之有機氫聚矽氧烷3.5份(相對於烯基為2莫耳)、乙炔基環己醇0.7份。進而添加鉑觸媒CAT-PL-5(信越化學工業股份有限公司製)0.5份,以0.2μm之過濾膜過濾,獲得樹脂溶液。
其次,如下述般進行基板洗淨。
[步驟(a)]
準備基板層合體。具體而言,於作為支撐體之200mm玻璃晶圓(厚:700μm)上,旋轉塗佈樹脂溶液後,以加熱板於100℃加熱5分鐘,層合暫時接著材層(厚:35μm)。其次將直徑200mm矽晶圓(厚:725μm)作為基板與支撐體接合。接合係藉由晶圓接合裝置(EVG公司製,EVG52IS(商品名))進行。且以接合溫度為50℃,接合時之腔室內壓力為10-3
mbar以下,荷重為10kN實施。接合後,使用烘箱於200加熱接合後之基板2小時,使暫時接著材層硬化,冷卻至室溫。如此,獲得基板層合體。
[步驟(b)]
其次,研削基板層合體之基板背面。具體而言,以研磨機(DISCO股份有限公司製,DAG810(商品名))使用金剛石研磨粒進行矽晶圓之背面研削。研磨至最終基板厚50μm。
[步驟(c)]
其次,進行模擬加熱步驟作為對基板背面實施加工之步驟。具體而言,將已進行背面研削之基板層合體於260℃加熱板上加熱10分鐘。
[步驟(d)]
其次,自基板層合體剝離支撐體。具體而言,使用切晶框於矽晶圓背面(電路非形成面)貼上切晶膠帶,藉由真空吸附該切晶膠帶面,固定於吸附板上。隨後,於室溫,以銷組(pin set)將玻璃晶圓之1點拉起,將玻璃晶圓與暫時接著材層剝離。
[步驟(e)]
其次,藉由洗淨劑組成物A,洗淨基板表面。具體而言,將矽晶圓於洗淨劑組成物A中浸漬5分鐘後,予以乾燥。
[實施例13~22及比較例5~7]
除了替代洗淨劑組成物A而使用洗淨劑組成物B~洗淨劑組成物K及比較洗淨劑組成物L~洗淨劑組成物N以外,與實施例12同樣進行基板洗淨。
[洗淨後基板表面分析]
以下述方法進行於實施例12~22及比較例5~7中洗淨之基板的評價。
經洗淨之基板評價係以X射線光電子分析法(XPS)進行。對於前述步驟(d)所得之基板表面,以XPS進行基板表面之元素分析的結果,Si含有率為23%。又,Si含有率係源自矽基板之Si除外。
測定裝置:KRATOS製AXIS-Ultra DLD
對於實施例12~22及比較例5~7中洗淨之基板表面,以XPS進行表面之元素分析。結果示於表2-1、2-2。
如表2-1、2-2所示,滿足本發明要件之實施例12~22,對於殘存於基板上之含有矽氧之暫時接著材,可以短時間獲得良好洗淨性。
另一方面,未滿足本發明要件之比較例5~7無法獲得良好洗淨性。進而比較例4中,亦無法獲得良好之洗淨劑組成物。
又,本發明並非限定於上述實施形態。上述時實施形態為例示,凡具有與本發明之申請專利範圍中記載之技術思想實質相同之構成,並發揮同樣作用效果者,均包含於本發明之技術範圍。
1:支撐體
2:暫時接著層(硬化層(A))
3:基板
10:基板層合體
[圖1]係用以說明基板層合體之圖。
Claims (6)
- 一種洗淨劑組成物,其係用以去除存在於基板上之含有聚矽氧化合物之暫時接著材所用之洗淨劑組成物,其特徵為 前述洗淨劑組成物含有 (A)有機溶劑:75~99質量份、 (B)水:0~5質量份、及 (C)銨鹽:1~20質量份 (但(A)+(B)+(C)=100質量份), 前述有機溶劑不含有具有羥基之有機溶劑,前述有機溶劑100質量份中,含有50質量份以上之具有雜原子之有機溶劑, 前述銨鹽含有氫氧化物離子、氟化物離子及氯化物離子中之至少1種。
- 如請求項1之洗淨劑組成物,其中前述有機溶劑包含選自由丙二醇單甲醚乙酸酯、二甲基亞碸、乙酸丁酯及環戊酮所成之群中之至少1種。
- 如請求項1或2之洗淨劑組成物,其中前述銨鹽包含四烷基銨鹽。
- 如請求項1至3中任一項之洗淨劑組成物,其中前述銨鹽包含含有氟化物離子之銨鹽。
- 一種基板之洗淨方法,其特徵係包含下述步驟:自具備支撐體、形成於該支撐體上之暫時接著層、及以具有電路面之表面對向於該暫時接著層之方式層合之基板的基板層合體,剝離前述支撐體,藉由如請求項1至4中任一項之洗淨劑組成物洗淨去除前述基板上殘存之前述暫時接著層。
- 一種支撐體或基板之洗淨方法,其特徵係包含下述步驟:於支撐體或基板上形成暫時接著層,藉由如請求項1至4中任一項之洗淨劑組成物洗淨去除該暫時接著層之一部分。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-096060 | 2019-05-22 | ||
JP2019096060 | 2019-05-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202106865A true TW202106865A (zh) | 2021-02-16 |
Family
ID=73458510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109116863A TW202106865A (zh) | 2019-05-22 | 2020-05-21 | 洗淨劑組成物、基板之洗淨方法及支撐體或基板之洗淨方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20220186152A1 (zh) |
EP (1) | EP3974070A4 (zh) |
JP (1) | JP7237435B2 (zh) |
KR (1) | KR20220011151A (zh) |
CN (1) | CN113840670B (zh) |
TW (1) | TW202106865A (zh) |
WO (1) | WO2020235605A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI749964B (zh) * | 2020-12-24 | 2021-12-11 | 達興材料股份有限公司 | 鹼性清洗組合物、清洗方法和半導體製造方法 |
KR20220129246A (ko) * | 2021-03-16 | 2022-09-23 | 동우 화인켐 주식회사 | 고분자 처리용 공정액 조성물 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10239865A (ja) * | 1997-02-24 | 1998-09-11 | Jsr Corp | ネガ型フォトレジスト用剥離液組成物 |
TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
EP2244283A4 (en) * | 2008-02-15 | 2012-01-04 | Lion Corp | CLEANING COMPOSITION AND METHOD FOR CLEANING SUBSTRATE FOR ELECTRONIC DEVICE |
TW201103977A (en) * | 2009-04-30 | 2011-02-01 | Lion Corp | Method for cleaning semiconductor substrate and acid solution |
JP5348147B2 (ja) | 2011-01-11 | 2013-11-20 | 信越化学工業株式会社 | 仮接着材組成物、及び薄型ウエハの製造方法 |
JP5767159B2 (ja) * | 2012-04-27 | 2015-08-19 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP5687230B2 (ja) * | 2012-02-28 | 2015-03-18 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
KR101974224B1 (ko) * | 2012-11-09 | 2019-05-02 | 동우 화인켐 주식회사 | 접착 폴리머 제거용 조성물 |
JP6059631B2 (ja) | 2012-11-30 | 2017-01-11 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
JP2014133855A (ja) * | 2012-12-11 | 2014-07-24 | Fujifilm Corp | シロキサン樹脂の除去剤、それを用いたシロキサン樹脂の除去方法並びに半導体基板製品及び半導体素子の製造方法 |
JP2014205762A (ja) * | 2013-04-12 | 2014-10-30 | 信越化学工業株式会社 | 無溶剤型シリコーン粘着剤組成物及び粘着性物品 |
JP6165665B2 (ja) | 2013-05-30 | 2017-07-19 | 信越化学工業株式会社 | 基板の洗浄方法 |
KR102091543B1 (ko) * | 2013-08-01 | 2020-03-23 | 동우 화인켐 주식회사 | 망상형 고분자 용해용 조성물 |
US10106713B2 (en) | 2014-01-29 | 2018-10-23 | Shin-Etsu Chemical Co., Ltd. | Wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer |
JP6426936B2 (ja) * | 2014-07-31 | 2018-11-21 | 東京エレクトロン株式会社 | 基板洗浄方法および記憶媒体 |
JP6350080B2 (ja) * | 2014-07-31 | 2018-07-04 | Jsr株式会社 | 半導体基板洗浄用組成物 |
CN107034028B (zh) * | 2015-12-04 | 2021-05-25 | 三星电子株式会社 | 用于除去有机硅树脂的组合物、使用其薄化基材和制造半导体封装体的方法及使用其的系统 |
KR102113463B1 (ko) * | 2016-01-22 | 2020-05-21 | 후지필름 가부시키가이샤 | 처리액 |
TWI732005B (zh) * | 2016-07-29 | 2021-07-01 | 日商富士軟片股份有限公司 | 套組、洗淨劑組成物及半導體元件的製造方法 |
JP6528747B2 (ja) * | 2016-09-13 | 2019-06-12 | 信越化学工業株式会社 | ウエハ加工用仮接着材料、ウエハ加工体、及び薄型ウエハの製造方法 |
-
2020
- 2020-05-20 KR KR1020217041480A patent/KR20220011151A/ko unknown
- 2020-05-20 US US17/603,219 patent/US20220186152A1/en active Pending
- 2020-05-20 JP JP2021520824A patent/JP7237435B2/ja active Active
- 2020-05-20 EP EP20810362.2A patent/EP3974070A4/en active Pending
- 2020-05-20 WO PCT/JP2020/019986 patent/WO2020235605A1/ja unknown
- 2020-05-20 CN CN202080036912.8A patent/CN113840670B/zh active Active
- 2020-05-21 TW TW109116863A patent/TW202106865A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JPWO2020235605A1 (ja) | 2021-10-28 |
CN113840670B (zh) | 2024-05-10 |
JP7237435B2 (ja) | 2023-03-13 |
CN113840670A (zh) | 2021-12-24 |
WO2020235605A1 (ja) | 2020-11-26 |
EP3974070A4 (en) | 2023-07-12 |
KR20220011151A (ko) | 2022-01-27 |
US20220186152A1 (en) | 2022-06-16 |
EP3974070A1 (en) | 2022-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107039239B (zh) | 晶片加工体以及晶片加工方法 | |
TWI640436B (zh) | 晶圓加工體、晶圓加工用暫時性接著材及薄型晶圓之製造方法 | |
TWI663232B (zh) | 晶圓加工體、晶圓加工用臨時接著材料、及薄型晶圓之製造方法 | |
JP5687230B2 (ja) | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 | |
KR101907010B1 (ko) | 웨이퍼 가공체, 웨이퍼 가공용 부재, 웨이퍼 가공용 가접착재 및 박형 웨이퍼의 제조 방법 | |
EP3038148B1 (en) | Wafer temporary bonding method and thin wafer manufacturing method | |
JP5767159B2 (ja) | ウエハ加工体、ウエハ加工用部材、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 | |
TWI690579B (zh) | 晶圓加工用暫時接著材、晶圓加工體、及薄型晶圓之製造方法 | |
TW201726866A (zh) | 晶圓加工用接著材、晶圓層合體及薄型晶圓之製造方法 | |
TWI793305B (zh) | 附電路基板加工體及附電路基板加工方法 | |
JP2012229333A (ja) | オルガノポリシロキサン、オルガノポリシロキサンを含む仮接着剤組成物、及びそれを用いた薄型ウエハの製造方法 | |
TW202113054A (zh) | 基板用假性接著劑的洗淨液、基板的洗淨方法及支撐體或基板的洗淨方法 | |
TW202106865A (zh) | 洗淨劑組成物、基板之洗淨方法及支撐體或基板之洗淨方法 | |
TW202134386A (zh) | 晶圓加工用假性接著劑、晶圓積層體及薄型晶圓的製造方法 | |
JP7351260B2 (ja) | デバイス基板用仮接着剤、デバイス基板積層体及びデバイス基板積層体の製造方法 | |
JP2020012020A (ja) | ウエハ加工用仮接着剤、ウエハ積層体、ウエハ積層体の製造方法、及び薄型ウエハの製造方法 |