TW202134386A - 晶圓加工用假性接著劑、晶圓積層體及薄型晶圓的製造方法 - Google Patents
晶圓加工用假性接著劑、晶圓積層體及薄型晶圓的製造方法 Download PDFInfo
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- TW202134386A TW202134386A TW109142149A TW109142149A TW202134386A TW 202134386 A TW202134386 A TW 202134386A TW 109142149 A TW109142149 A TW 109142149A TW 109142149 A TW109142149 A TW 109142149A TW 202134386 A TW202134386 A TW 202134386A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
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Abstract
本發明之課題在提供一種晶圓加工用假性接著劑、晶圓積層體及薄型晶圓的製造方法,該晶圓加工用假性接著劑係即使於使用高階差基板的情況中,也晶圓接合後的基板保持性充分,其後之晶圓加工耐性亦優異,且加工後之晶圓剝離性與剝離後之洗淨去除性亦優異。
本發明之解決手段為一種晶圓加工用假性接著劑,其係由包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物所成,用於將晶圓假性接著於支撐體。
Description
本發明關於晶圓加工用假性接著劑、晶圓積層體及薄型晶圓的製造方法。
三次元半導體安裝為實現更進一步之高密度、大容量化所必須。三次元安裝技術係使一個半導體晶片薄型化,更一邊藉由矽貫穿電極(TSV:through silicon via)將它接線,一邊多層地層合之半導體製作技術。為了將其實現,必須藉由將形成有半導體電路的基板予以電路非形成面(亦稱為「背面」)研削而薄型化,更在背面進行包含TSV的電極形成之步驟。以往,於矽基板之背面研削步驟中,在研削面之相反側黏貼背面保護膠帶,防止研削時之晶圓破損。然而,此膠帶係將有機樹脂薄膜用於支撐基材,具有柔軟性,但相反地強度或耐熱性不充分,不適合於進行TSV形成步驟或背面之配線層形成步驟。
因此,有提案透過接著劑層將半導體基板接合於矽、玻璃等支撐體,而可充分耐受背面硏削、TSV或背面電極形成步驟之系統。此時重要的是將基板接合於支撐體時的接著劑層。其必須能將基板無間隙地接合至支撐體,可耐受後續步驟之充分耐久性,更必須在最後可從支撐體簡易地剝離薄型晶圓。如此地,由於在最後剝離,故於本說明書中將該接著劑層亦稱為假性接著劑層。
至目前為止作為眾所周知的假性接著劑層與其剝離方法,有提案藉由對於包含光吸收性物質的接著劑照射高強度的光,將接著劑層分解而從支撐體剝離接著劑層之技術(專利文獻1),及將熱熔融性的烴系化合物用於接著劑,於加熱熔融狀態下進行接合・剝離之技術(專利文獻2)。前者之技術需要雷射等高價的裝置,且有每1片基板的處理時間變長等之問題。又,後者之技術由於僅藉由加熱進行控制而簡便,但另一方面由於超過200℃之高溫下之熱安定性不充分,故適用範圍狹窄。再者於此等假性接著劑層中,亦不適合於高階差基板的均勻膜厚形成與對於支撐體的完全接著。
又,有提案將聚矽氧黏著劑用於假性接著劑層之技術。此係使用加成硬化型的聚矽氧黏著劑,將基板接著於支撐體,於剝離時將聚矽氧樹脂浸漬能溶解或分解的藥劑中,而將基板從支撐體分離(專利文獻3)。因此,在剝離需要非常長的時間,對於實際的製程之適用為困難。又,在剝離後為了洗淨在基板上作為殘渣殘留的聚矽氧黏著劑,亦需要長時間,從洗淨去除性之點來看亦有問題。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2004-64040號公報
[專利文獻2]日本特開2006-328104號公報
[專利文獻3]美國專利第7541264號說明書
[發明所欲解決的課題]
本發明係鑒於前述課題而完成者,目的在於提供一種晶圓加工用假性接著劑、晶圓積層體及使用其之薄型晶圓的製造方法,該晶圓加工用假性接著劑係即使於使用高階差基板的情況中,也接合後的基板保持性充分,對於晶圓背面研削步驟、TSV形成步驟、晶圓背面配線步驟的步驟適合性高,晶圓熱製程耐性亦優異,另一方面剝離步驟中的剝離為容易,且剝離後的基板之殘渣洗淨性亦優異等,造成薄型晶圓的生產性提升。
[解決課題的手段]
本發明者們為了解決前述課題而專心致力地檢討,結果發現藉由將包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物使用於假性接著劑,可解決前述課題,而完成本發明。
因此,本發明提供下述晶圓加工用假性接著劑、晶圓積層體及薄型晶圓的製造方法。
1.一種晶圓加工用假性接著劑,其係由包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物所成,用於將晶圓假性接著於支撐體。
2.如1之晶圓加工用假性接著劑,其中前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物包含:
(A)在1分子中具有2個以上烯基之有機聚矽氧烷:100質量份,
(B)在1分子中含有2個以上鍵結至矽原子的氫原子(SiH基)之有機氫聚矽氧烷:(B)成分中的SiH基合計相對於(A)成分中的烯基合計係以莫耳比成為0.3~10之量,
(C)無官能性有機聚矽氧烷:0.1~200質量份,及
(D)氫矽化反應觸媒:相對於(A)、(B)及(C)成分之合計質量,以金屬原子量換算為0.1~5,000ppm。
3.如2之晶圓加工用假性接著劑,其中(C)成分之無官能性有機聚矽氧烷在30質量%甲苯溶液的25℃中之黏度為100~500,000mPa・s。
4.如1~3中任一項之晶圓加工用假性接著劑,其中前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物進一步含有相對於前述(A)、(B)及(C)成分之合計質量,0.001~10質量份的氫矽化反應控制劑作為(E)成分。
5.如1~4中任一項之晶圓加工用假性接著劑,其中於前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物之硬化後,在25℃的對於矽基板之25mm寬度的試驗片之180°撕開剝離力為2gf以上50gf以下。
6.如1~5中任一項之晶圓加工用假性接著劑,其中於前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物之硬化後,在25℃的儲存彈性模數為1,000Pa以上1,000MPa以下。
7.一種薄型晶圓的製造方法,其包含:
(a)將在表面具有電路形成面及在背面具有電路非形成面之晶圓的前述電路形成面,使用如1~6中任一項之晶圓加工用假性接著劑,能剝離地接著於支撐體,形成晶圓積層體之步驟,
(b)使前述假性接著劑熱硬化之步驟,
(c)研削或研磨前述晶圓積層體之晶圓的電路非形成面之步驟,
(d)對於前述晶圓的電路非形成面,施予加工之步驟,及
(e)將施有前述加工的晶圓從前述支撐體剝離之步驟。
8.一種晶圓積層體,其係具備支撐體、積層於其上之由如1~6中任一項之晶圓加工用假性接著劑所得之假性接著劑層、與在表面具有電路形成面及在背面具有電路非形成面之晶圓的晶圓積層體,
前述假性接著劑層係能剝離地接著於前述晶圓之表面者。
[發明的效果]
本發明之晶圓加工用假性接著劑係藉由使用包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物,而當然不發生樹脂的熱分解,尤其即使在200℃以上之高溫下也不發生樹脂之流動,耐熱性高。因此,可適用於寬廣的半導體成膜製程,CVD(化學氣相成長)耐性亦優異,且即使對於具有階差的晶圓,也可形成膜厚均勻性高的假性接著劑層,由於此膜厚均勻性,故可容易地製作50μm以下的均勻薄型晶圓。再者,由於使用無官能性有機聚矽氧烷而剝離性亦優異,故在薄型晶圓製作後,可將晶圓從支撐體例如在室溫下容易地剝離,故可能容易製造易破裂的薄型晶圓。又,本發明之假性接著劑由於可與支撐體選擇地接著,故剝離後在薄型晶圓上不殘留源自假性接著劑的殘渣,其後的洗淨去除性亦優異。藉由本發明之薄型晶圓的製造方法,可容易地製造具有貫穿電極構造或凹塊連接構造之薄型晶圓。
[實施發明的形態]
[晶圓加工用假性接著劑]
本發明之晶圓加工用假性接著劑係由包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物所成。從對於具有階差的矽晶圓等之適用性來看,具有良好的旋轉塗佈性之聚矽氧樹脂組成物係可較宜使用作為晶圓加工用假性接著劑。
作為如此的熱硬化性聚矽氧樹脂組成物,例如較佳為包含下述(A)~(D)成分者。
(A)在1分子中具有2個以上烯基之有機聚矽氧烷:100質量份,
(B)在1分子中含有2個以上鍵結至矽原子的氫原子(SiH基)之有機氫聚矽氧烷:(B)成分中的SiH基合計相對於(A)成分中的烯基合計係以莫耳比成為0.3~10之量,
(C)無官能性有機聚矽氧烷:0.1~200質量份,及
(D)氫矽化反應觸媒:相對於(A)、(B)及(C)成分之合計質量,以金屬原子量換算為0.1~5,000ppm。
[(A)成分]
(A)成分為在1分子中具有2個以上烯基之有機聚矽氧烷。作為(A)成分,可舉出在1分子中包含2個以上烯基之直鏈狀或分支狀的二有機聚矽氧烷、在1分子中包含2個以上烯基之具有以SiO4/2
單元所示的矽氧烷單元(Q單元)之三次元網目構造的有機聚矽氧烷等。於此等之中,烯基含有率為0.6~9莫耳%之二有機聚矽氧烷或三次元網目構造的有機聚矽氧烷較宜。尚且,本發明中所謂烯基含有率,就是相對於分子中的Si原子數而言烯基數之比例(莫耳%)。
式(A-1)~(A-3)中,R1
~R16
各自獨立為脂肪族不飽和烴基以外的1價烴基。X1
~X5
各自獨立為含烯基的1價有機基。
式(A-1)中,a及b各自獨立為0~3之整數。式(A-1)及(A-2)中,c1
、c2
、d1
及d2
為滿足0≦c1
≦10、2≦c2
≦10、0≦d1
≦100及0≦d2
≦100之整數。惟,a+b+c1
≧2。a、b、c1
、c2
、d1
及d2
較佳為以烯基含有率成為0.6~9莫耳%之數的組合。
式(A-3)中,e為1~3之整數。f1
、f2
及f3
係(f2
+f3
)/f1
成為0.3~3.0,且f3
/(f1
+f2
+f3
)成為0.01~0.6之數。
作為前述脂肪族不飽和烴基以外的1價烴基,較佳為碳數1~10者,例如可舉出甲基、乙基、正丙基、異丙基、正丁基、第三丁基、正戊基、正己基等之烷基;環戊基、環己基等之環烷基;苯基、甲苯基等之芳基等。於此等之中,較佳為甲基等之烷基或苯基。
作為前述含烯基的1價有機基,較佳為碳數2~10者,例如可舉出乙烯基、烯丙基、己烯基、辛烯基等之烯基;丙烯醯基丙基、丙烯醯基甲基、甲基丙烯醯基丙基等之(甲基)丙烯醯基烷基;丙烯醯氧基丙基、丙烯醯氧基甲基、甲基丙烯醯氧基丙基、甲基丙烯醯氧基甲基等之(甲基)丙烯醯氧基烷基;環己烯基乙基、乙烯氧基丙基等之含烯基的1價烴基。於此等之中,從工業的觀點來看,較佳為乙烯基。
式(A-1)中,a及b各自獨立為0~3之整數,若a為1~3,則由於分子鏈末端被烯基封鎖,藉由反應性良好的分子鏈末端烯基來短時間內完成反應而較宜。又,從成本面來看,a為1者係工業上較宜。式(A-1)或(A-2)所示之含烯基的二有機聚矽氧烷之性質形狀較佳為油狀或生橡膠狀。
式(A-3)所示的有機聚矽氧烷包含SiO4/2
單元,且具有三次元網目構造者。式(A-3)中,e各自獨立為1~3之整數,但從成本面來看1者為工業上較宜。又,e之平均值與f3
/(f1
+f2
+f3
)之積較佳為0.02~1.5,更佳為0.03~1.0。式(A-3)所示的有機聚矽氧烷亦可作為溶解於有機溶劑中之溶液使用。
(A)成分之有機聚矽氧烷的數量平均分子量(Mn)較佳為100~1000,000,更佳為1,000~100,000。若Mn為前述範圍,則於隨著組成物之黏度的作業性或隨著硬化後的儲存彈性模數的加工性之點中較宜。尚且,本發明中的Mn係藉由使用甲苯作為溶劑的凝膠滲透層析法之聚苯乙烯換算測定值。
(A)成分係可以單獨1種使用,也可組合2種以上使用。特別地,較佳為組合式(A-1)所示的有機聚矽氧烷與式(A-3)所示的有機聚矽氧烷而使用。此時,式(A-3)所示的有機聚矽氧烷之使用量係相對於式(A-1)所示的有機聚矽氧烷100質量份,較佳為1~1,000質量份,更佳為10~500質量份。
[(B)成分]
(B)成分為交聯劑,為在1分子中具有至少2個、較佳3個以上鍵結至矽原子的氫原子(SiH基)之有機氫聚矽氧烷。前述有機氫聚矽氧烷可為直鏈狀、分支狀、環狀之任一者。又,前述有機氫聚矽氧烷可以單獨1種使用,也可組合2種以上使用。
(B)成分之有機氫聚矽氧烷在25℃的黏度較佳為1~5,000mPa・s,更佳為5~500mPa・s。尚且,本發明中的黏度係藉由旋轉黏度計測量的在25℃之測定值。
(B)成分之有機氫聚矽氧烷的Mn較佳為100~100,000,更佳為500~10,000。若Mn為前述範圍,則於隨著組成物黏度的作業性或隨著硬化後之儲存彈性模數的加工性之點中較宜
(B)成分較佳為以(B)成分中的SiH基合計相對於(A)成分中的烯基合計以莫耳比(SiH基/烯基)成為0.3~10之範圍的方式摻合,更佳為以成為1.0~8.0之範圍的方式摻合。若前述莫耳比為0.3以上,則交聯密度亦不變低,亦不發生假性接著劑層不硬化之問題。又,若前述莫耳比為10以下,則交聯密度亦不過高,得到充分的黏著力及黏性,亦可增長處理液的能使用時間。
[(C)成分]
(C)成分為無官能性有機聚矽氧烷。此處所謂「無官能性」,就是意指在分子內不具有直接或透過任意的基鍵結至矽原子的烯基、氫原子、羥基、烷氧基、鹵素原子、環氧基等之反應性基。
作為如此的無官能性有機聚矽氧烷,例如可舉出未取代或取代之碳數1~12、較佳1~10之具有脂肪族不飽和烴基以外的1價烴基之有機聚矽氧烷。作為如此的1價烴基,例如可舉出甲基、乙基、丙基、丁基、戊基、己基、庚基等之烷基;環己基等之環烷基;苯基、甲苯基、二甲苯基、萘基等之芳基;苄基、苯乙基等之芳烷基等。又,此等之基的氫原子之一部分或全部亦可被氯原子、氟原子、溴原子等之鹵素原子所取代,作為如此的基,可舉出氯甲基、3-氯丙基、3,3,3-三氟丙基等之鹵化烷基等。作為前述1價烴基,較佳為烷基、芳基,更佳為甲基、苯基。
(C)成分之無官能性有機聚矽氧烷的分子構造係沒有特別的限定,可為直鏈狀、分支狀、環狀等之任一者,較佳為直鏈狀或分支狀的有機聚矽氧烷,特別地較佳為主鏈基本上由二有機矽氧烷單元之重複所構成,分子鏈末端被三有機矽氧烷基所封鎖之直鏈狀或分支狀二有機聚矽氧烷。
(C)成分之無官能性有機聚矽氧烷在30質量%甲苯溶液的25℃中之黏度,從組成物的作業性、向基材的塗佈性、硬化物的力學特性、支撐體的剝離性等之觀點來看,較佳為100~500,000mPa・s,更佳為200~100,000mPa・s。若為前述範圍,則具有適當的分子量,因此不會於使聚矽氧樹脂組成物加熱硬化時揮發而難以得到效果或於CVD等之晶圓熱製程中引起晶圓破裂,由於作業性和塗佈性亦良好而較宜。
作為前述直鏈狀無官能性有機聚矽氧烷,可舉出分子鏈兩末端三甲基矽氧烷基封鎖二甲基矽氧烷聚合物、分子鏈兩末端三甲基矽氧烷基封鎖二苯基聚矽氧烷、分子鏈兩末端三甲基矽氧烷基封鎖3,3,3-三氟丙基甲基矽氧烷聚合物、分子鏈兩末端三甲基矽氧烷基封鎖二甲基矽氧烷・二苯基矽氧烷共聚物、分子鏈兩末端三甲基矽氧烷基封鎖二甲基矽氧烷・3,3,3三氟丙基甲基共聚物、分子鏈兩末端三甲基矽氧烷基封鎖二苯基矽氧烷・3,3,3-三氟丙基甲基共聚物、分子鏈兩末端三甲基矽氧烷基封鎖二甲基矽氧烷・3,3,3-三氟丙基甲基矽氧烷・二苯基矽氧烷共聚物、分子鏈兩末端三苯基矽氧烷基封鎖二甲基聚矽氧烷、分子鏈兩末端三苯基矽氧烷基封鎖二苯基聚矽氧烷、分子鏈兩末端三苯基矽氧烷基封鎖二甲基矽氧烷・二苯基矽氧烷共聚物等。
(C)成分之無官能性有機聚矽氧烷的摻合量係相對於(A)成分100質量份,為0.1~200質量份,較佳為1~180質量份,更佳為10~170質量份。若(C)成分之摻合量為前述範圍,則可將晶圓從支撐體容易地剝離。(C)成分之無官能性有機聚矽氧烷係可以單獨1種使用,也可組合2種以上使用。又,其性質形狀較佳為油狀或生橡膠狀。
[(D)成分]
(D)成分為氫矽化反應觸媒,較佳為鉑族金屬系氫矽化反應觸媒。(D)成分係促進(A)成分中的烯基與(B)成分中的氫矽基之加成反應的觸媒。此氫矽化反應觸媒一般為貴金屬的化合物,由於高價格,宜使用比較容易取得的鉑或鉑化合物。
作為鉑化合物,例如可舉出氯鉑酸或氯鉑酸與乙烯等之烯烴的錯合物、與醇或乙烯基矽氧烷之錯合物、於二氧化矽、氧化鋁、碳等上擔持的金屬鉑等。作為鉑化合物以外之鉑族金屬觸媒,亦已知銠、釕、銥、鈀系化合物,例如可舉出RhCl(PPh3
)3
、RhCl(CO)(PPh3
)2
、
Ru3
(CO)12
、IrCl(CO)(PPh3
)2
、Pd(PPh3
)4
等。尚且,前述式中,Ph為苯基。
於此等觸媒之使用時,當其為固體觸媒時,亦可以固體狀使用,但為了得到更均勻的硬化物,較佳為使在適當的溶劑中溶解有氯鉑酸或錯合物者相溶於(A)成分而使用。
(D)成分之添加量為有效量,通常相對於(A)、(B)及(C)成分之合計質量,以金屬原子量換算為0.1~5,000ppm,較佳為1~1,000ppm。若為0.1ppm以上,則組成物之硬化性亦不降低,交聯密度不變低,保持力亦不降低。若為5,000ppm以下,則可抑制硬化時的脫氫等副反應,且亦可增長處理液的能使用時間。
[(E)成分]
前述熱硬化性聚矽氧樹脂組成物可進一步包含反應控制劑作為(E)成分。反應控制劑係在調製組成物或塗佈於基材時,為了組成物不發生增黏或凝膠化,視需要而任意添加者。
作為前述反應控制劑,可舉出3-甲基-1-丁炔-3-醇、3-甲基-1-戊快-3-醇、3,5-二甲基-1-己炔-3-醇、1-乙炔環己醇、3-甲基-3-三甲基矽氧基-1-丁炔、3-甲基-3-三甲基矽氧基-1-戊快、3,5-二甲基-3-三甲基矽氧基-1-己炔、1-乙炔-1-三甲基矽氧基環己烷、雙(2,2-二甲基-3-丁炔氧基)二甲基矽烷、1,3,5,7-四甲基-1,3,5,7-四乙烯基環四矽氧烷、1,1,3,3-四甲基-1,3-二乙烯基二矽氧烷等。於此等之中,較佳為1-乙炔環己醇及3-甲基-1-丁炔-3-醇。
當前述熱硬化性聚矽氧樹脂組成物包含(E)成分時,由於因化學結構而控制能力不同,故其含量係各自應調整至最適合量,但鑒於對硬化性、保存安定性、硬化後物性之影響等,相對於前述(A)、(B)及(C)成分之合計100質量份,較佳為0.001~10質量份,更佳為0.01~10質量份。若(E)成分之含量為前述範圍,則組成物之能使用時間長,得到長期保存安定性,硬化性或作業性良好。
於前述熱硬化性聚矽氧樹脂組成物中,可進一步添加包含RA 3
SiO0.5
單元(式中,RA
各自獨立為碳數1~10之未取代或取代的1價烴基)及SiO2
單元,且RA 3
SiO0.5
單元相對於SiO2
單元之莫耳比(RA 3
SiO0.5
/SiO2
)為0.3~1.8之有機聚矽氧烷。其添加量係相對於(A)成分100質量份,較佳為0~500質量份。
於前述熱硬化性聚矽氧樹脂組成物中,為了進一步提高由此所得之假性接著劑層的耐熱性,在不損害其性能之範圍內可添加二氧化矽等之填料。
熱硬化性聚矽氧樹脂組成物,從因該組成物的低黏度化而作業性提升或混合性提升、假性接著劑層的膜厚調整等之理由來看,可添加溶劑進行溶液化而使用。所用的溶劑只要是能溶解前述成分者則沒有特別的限定,但例如較佳為戊烷、己烷、環己烷、異辛烷、壬烷、癸烷、對薄荷烷、蒎烯、異十二烷、檸檬烯等之烴系溶劑。
作為溶液化之方法,可舉出在調製前述熱硬化性聚矽氧樹脂組成物後,最後添加溶劑而調整至所欲黏度之方法,或預先以溶劑稀釋高黏度的(A)、(B)及/或(C)成分,改善作業性或混合性後,混合剩餘的成分之方法。又,作為溶液化時的混合方法,只要從振動混合機、磁性攪拌器、各種混合機等、組成物黏度與作業性來適宜選擇混合方法而實施即可。
溶劑之摻合量只要從調整組成物的黏度或作業性、假性接著劑層的膜厚之觀點等來適宜設定即可,但例如相對於熱硬化性聚矽氧樹脂組成物100質量份,較佳為5~900質量份,更佳為10~400質量份。
假性接著劑層係可藉由旋轉塗佈、輥塗等之方法,將前述熱硬化性聚矽氧樹脂組成物塗佈於基板上而形成。其中,藉由旋轉塗佈等之方法將假性接著劑層形成於基板上時,較佳為將前述熱硬化性聚矽氧樹脂組成物予以溶液化,進行塗佈。
經溶液化的熱硬化性聚矽氧樹脂組成物係在25℃下的黏度,從塗佈性的觀點來看,較佳為1~100,000 mPa・s,更佳為10~10,000mPa・s。
前述熱硬化性聚矽氧樹脂組成物係硬化後的25℃之25mm寬度的試驗片(例如,玻璃試驗片)之180°撕開剝離力通常為2~50gf,較佳為3~30gf,更佳為5~20gf。若為2gf以上,則在晶圓研削時沒有發生晶圓的偏移之虞,若為50gf以下,則晶圓的剝離變容易。
熱硬化性聚矽氧樹脂組成物係硬化後的在25℃之儲存彈性模數為1,000Pa以上1,000MPa以下,較佳為10,000Pa以上100MPa以下。若儲存彈性模數為1,000Pa以上,則所形成的膜為強韌,在晶圓研削時沒有發生晶圓之偏移或伴隨其的晶圓破裂之虞,若為1,000MPa以下,則可緩和CVD等之晶圓熱製程中的變形應力,在向晶圓的熱製程時亦安定。
[薄型晶圓的製造方法]
本發明之薄型晶圓的製造方法之特徵為:在具有半導體電路等的晶圓與支撐體之假性接著中,使用前述晶圓加工用假性接著劑。
本發明之薄型晶圓的製造方法包含下述步驟(a)~(e)。
[步驟(a)]
步驟(a)為假性接著步驟,係將在表面具有電路形成面及在背面具有電路非形成面之晶圓的電路形成面,使用前述晶圓加工用假性接著劑,能剝離地接著於支撐體,形成晶圓積層體之步驟。
具體而言,在前述晶圓之表面上,使用前述晶圓加工用假性接著劑形成假性接著劑層,透過該假性接著劑層來貼合支撐體與前述晶圓之表面,而可進行假性接著。或者,在前述支撐體之表面上,使用前述晶圓加工用假性接著劑形成假性接著劑層,透過該假性接著劑層來貼合前述支撐體與晶圓之表面,而可進行假性接著。
可適用於本發明之晶圓,通常為半導體晶圓。作為前述半導體晶圓之例,不僅矽晶圓,而且可舉出鍺晶圓、鎵-砷晶圓、鎵-磷晶圓、鎵-砷-鋁晶圓等。前述晶圓之厚度係沒有特別的限定,但典型上為600~800μm,更典型上為625~775μm。
作為前述支撐體,可使用矽晶圓、玻璃板、石英晶圓等之基板,但不受此等所限定。於本發明中,不需要通過支撐體將放射能量線照射至假性接著劑層,支撐基可沒有光線透過性。
假性接著劑層可藉由將前述熱硬化性聚矽氧樹脂組成物已成形為薄膜狀者予以層合在晶圓或支撐體上而形成,也可藉由旋轉塗佈、輥塗等之方法塗佈前述熱硬化性聚矽氧樹脂組成物而形成。前述熱硬化性聚矽氧樹脂組成物為包含溶劑的溶液時,在塗佈後,按照該溶劑的揮發條件,較佳在40~200℃、更佳在50~150℃之溫度下預先進行預烘烤後,而供使用。
前述假性接著劑層係膜厚為0.1~500μm,較佳以1.0~200μm之間形成而使用。若膜厚為0.1μm以上,則在塗佈於基材上時,不發生塗佈不漂亮的部分,可塗佈於全體。另一方面,若膜厚為500μm以下,則可耐受形成薄型晶圓時的研削步驟。
作為透過前述假性接著劑層來貼合支撐體與晶圓之表面的方法,可舉出較佳在40~200℃,更佳在50~150℃之溫度範圍中,於減壓下均勻地壓接之方法。
將形成有假性接著劑層的晶圓及支撐體壓接時的壓力,雖然亦取決於假性接著劑層之黏度,但較佳為0.01~10MPa,更佳為0.1~1.0MPa。若壓力為0.01MPa以上,則可以假性接著劑層充滿電路形成面或晶圓-支撐體間,若為10MPa以下,則沒有造成晶圓的破裂或晶圓及假性接著劑層的平坦性變差之虞,其後之晶圓加工良好。
晶圓之貼合係可使用市售之晶圓接合機,例如EVG公司的EVG5201S、850TB、SUSS MicroTec公司的XBS300等而進行。
[步驟(b)]
步驟(b)係使假性接著劑層熱硬化之步驟。於形成前述晶圓積層體後,較佳在50~300℃,更佳在100~200℃,較佳為進行1分鐘~4小時,更佳為進行5分鐘~2小時加熱,而進行假性接著劑層之硬化。
[步驟(c)]
步驟(c)係研削或研磨與支撐體假性接著的晶圓之電路非形成面之步驟,亦即,研削前述步驟所得的晶圓積層體之晶圓背面側,減薄該晶圓的厚度之步驟。晶圓背面的研削加工方式係沒有特別的限制,可採用眾所周知之研削方式。研削較佳為對晶圓與磨石(金鋼石等)施予水,邊冷卻邊進行。作為研削加工晶圓背面之裝置,例如可舉出(股)DISCO製DAG-810(商品名)等。又,亦可化學機械研磨(CMP)晶圓背面側。
[步驟(d)]
步驟(d)係對於步驟(c)中研削電路非形成面後的晶圓積層體之電路非形成面,施予加工之步驟。亦即,對於經由背面研削而薄型化的晶圓積層體之晶圓之電路非形成面,施予加工之步驟。於此步驟中,包含以晶圓級使用的各式各樣之製程。作為例子,可舉出電極形成、金屬配線形成、保護膜形成等。更具體而言,可舉出用於電極等之形成的金屬濺鍍、蝕刻金屬濺鍍層之濕式蝕刻、用於成為金屬配線形成的遮罩之阻劑塗佈、曝光及顯像之圖型形成、阻劑之剝離、乾式蝕刻、金屬鍍敷之形成、用於TSV形成之矽蝕刻、矽表面之氧化膜形成等習知的製程。
[步驟(e)]
步驟(e)係將步驟(d)中施予加工後的晶圓從支撐體剝離之步驟,亦即對於經薄型化的晶圓施予各式各樣的加工後,在切割前將晶圓從支撐體剝離之步驟。作為此剝離步驟,一般在室溫至60℃左右之比較溫和的條件下實施。作為剝離方法,可舉出將晶圓積層體之晶圓或支撐體之一者水平地固定,將另一者從水平方向以一定的角度上拉之方法,在經研削的晶圓之研削面上黏貼保護膜,以撕離方式將晶圓與保護膜從晶圓積層體剝離之方法等。以此等剝離方法進行剝離步驟時,通常在室溫下實施。
又,步驟(e)較佳包含:
(e1)於施予加工後的晶圓之晶圓面上貼附切割膠帶之步驟,
(e2)將切割膠帶面真空吸附於吸附面之步驟,及
(e3)於吸附面之溫度為10~100℃之範圍內,將支撐體從施有加工的晶圓剝除而剝離之步驟。
藉這樣做,可將支撐體從施有加工的晶圓容易地剝離,且可容易地進行後續切割步驟。
又,於步驟(e)後,較佳為進行:(f)去除在經剝離的晶圓之電路形成面上所殘存的假性接著劑層之步驟。於藉由步驟(e)從支撐體剝離的晶圓之電路形成面上,有假性接著劑層一部分殘存之情況,該假性接著劑層之去除例如可藉由洗淨晶圓而進行。
於此步驟(f)中,只要是能溶解假性接著劑層的聚矽氧樹脂之洗淨液,則皆可使用,具體而言可舉出戊烷、己烷、環己烷、癸烷、異壬烷、對薄荷烷、蒎烯、異十二烷、檸檬烯等。此等溶劑係可以單獨1種使用,也可混合2種以上使用。
又,難以去除假性接著劑層時,亦可在前述洗淨液中添加鹼類或酸類。作為前述鹼類,可使用乙醇胺、二乙醇胺、三乙醇胺、三乙胺、氨等之胺類;氫氧化四甲銨等之銨鹽類。作為前述酸類,可舉出醋酸、草酸、苯磺酸、十二基苯磺酸等之有機酸。前述鹼類或酸類之添加量係洗淨液中的濃度較佳成為0.01~10質量%,更佳成為0.1~5質量%之量。又,為了提高殘存物之去除性,可添加既有的界面活性劑。又,作為晶圓洗淨劑可取得的SPIS-TA-CLEANER系列(信越化學工業(股)製)亦可適合使用。
作為晶圓之洗淨方法,可舉出使用前述洗淨液以覆液進行洗淨之方法,噴灑噴霧而洗淨之方法、浸漬於洗淨液槽中之方法。洗淨時的溫度較佳為10~80℃,更佳為15~65℃,若須要,亦可以此等之洗淨液溶解假性接著劑層後,最終進行水或醇的沖洗,進行乾燥處理。
藉由本發明的製造方法所得之薄型晶圓的厚度,典型上為5~300μm,更典型上為10~100μm。
[實施例]
以下,顯示調製例、比較調製例、實施例及比較例,更具體地說明本發明,惟本發明不受此等實施例所限定。尚且,黏度係旋轉黏度計在25℃下的測定值。
[1]熱硬化性聚矽氧樹脂溶液之調製
[調製例1]
於由在分子側鏈具有2.5莫耳%的乙烯基且Mn為3萬的二甲基聚矽氧烷100質量份及甲苯200質量份所成之溶液中,添加由SiO4/2
單元(Q單元)50莫耳%、(CH3
)3
SiO1/2
單元(M單元)48莫耳%及(CH2
=CH)3
SiO1/2
單元(Vi單元)2莫耳%所成之Mn為7,000的乙烯基甲基聚矽氧烷50質量份及甲苯100質量份所成之溶液、由下述式(M-1)所示之Mn為2,800的有機氫聚矽氧烷230質量份、30質量%甲苯溶液的黏度(25℃)為30,000mPa・s之分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷50質量份及甲苯120質量份所成之溶液以及1-乙炔環己醇0.6質量份,進行混合。再者,於其中添加0.4質量份的氫矽化反應觸媒CAT-PL-5(信越化學工業(股)製,鉑濃度1.0質量%),以0.2μm的薄膜過濾器進行過濾,調製熱硬化性聚矽氧樹脂溶液A1。樹脂溶液A1在25℃的黏度為230mPa・s。
[調製例2]
於由在分子側鏈具有2.5莫耳%的乙烯基且Mn為3萬的二甲基聚矽氧烷70質量份、在兩末端鏈具有0.15莫耳%的乙烯基且Mn為6萬的二甲基聚矽氧烷30質量份及甲苯200質量份所成之溶液中,添加由SiO4/2
單元(Q單元)50莫耳%、(CH3
)3
SiO1/2
單元(M單元)48莫耳%及(CH2
=CH)3
SiO1/2
單元(Vi單元)2莫耳%所成之Mn為7,000的乙烯基甲基聚矽氧烷50質量份及甲苯100質量份所成之溶液、由式(M-1)所示之Mn為2,800的有機氫聚矽氧烷180質量份、30質量%甲苯溶液的黏度(25℃)為1,000mPa・s之分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷30質量份以及1-乙炔環己醇0.6質量份,進行混合。再者,於其中添加0.4質量份的氫矽化反應觸媒CAT-PL-5,以0.2μm的薄膜過濾器進行過濾,調製熱硬化性聚矽氧樹脂溶液A2。樹脂溶液A2在25℃的黏度為100mPa・s。
[調製例3]
於由在分子兩末端及側鏈具有2.5莫耳%的乙烯基且Mn為3萬的二甲基聚矽氧烷100質量份及甲苯200質量份所成之溶液中,添加由SiO4/2
單元(Q單元)50莫耳%、(CH3
)3
SiO1/2
單元(M單元)48莫耳%及(CH2
=CH)3
SiO1/2
單元(Vi單元)2莫耳%所成之Mn為7,000的乙烯基甲基聚矽氧烷50質量份及甲苯100質量份所成之溶液、由式(M-1)所示之Mn為2,800的有機氫聚矽氧烷230質量份、30質量%甲苯溶液的黏度(25℃)為100,000mPa・s之分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷20質量份及甲苯300質量份所成之溶液以及1-乙炔環己醇0.6質量份,進行混合。再者,於其中添加0.4質量份的氫矽化反應觸媒CAT-PL-5,以0.2μm的薄膜過濾器進行過濾,調製熱硬化性聚矽氧樹脂溶液A3。樹脂溶液A3在25℃的黏度為330mPa・s。
[調製例4]
於由在分子兩末端及側鏈具有2.5莫耳%的乙烯基且Mn為3萬的二甲基聚矽氧烷100質量份及甲苯200質量份所成之溶液中,添加由SiO4/2
單元(Q單元)50莫耳%、(CH3
)3
SiO1/2
單元(M單元)48莫耳%及(CH2
=CH)3
SiO1/2
單元(Vi單元)2莫耳%所成之Mn為7,000的乙烯基甲基聚矽氧烷200質量份及甲苯400質量份所成之溶液、由式(M-1)所示之Mn為2,800的有機氫聚矽氧烷430質量份、30質量%甲苯溶液的黏度(25℃)為30,000mPa・s之分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷100質量份及甲苯120質量份所成之溶液以及1-乙炔環己醇1.2質量份,進行混合。再者,於其中添加0.8質量份的氫矽化反應觸媒CAT-PL-5,以0.2μm的薄膜過濾器進行過濾,調製熱硬化性聚矽氧樹脂溶液A4。樹脂溶液A4在25℃的黏度為120mPa・s。
[調製例5]
於由在分子側鏈具有2.5莫耳%的乙烯基且Mn為3萬的二甲基聚矽氧烷70質量份、在兩末端鏈具有0.15莫耳%的乙烯基且Mn為6萬的二甲基聚矽氧烷30質量份及甲苯200質量份所成之溶液中,添加由SiO4/2
單元(Q單元)50莫耳%、(CH3
)3
SiO1/2
單元(M單元)48莫耳%及(CH2
=CH)3
SiO1/2
單元(Vi單元)2莫耳%所成之Mn為7,000的乙烯基甲基聚矽氧烷200質量份及甲苯400質量份所成之溶液、式(M-1)所示之Mn為2,800的有機氫聚矽氧烷380質量份、30質量%甲苯溶液的黏度(25℃)為1,000mPa・s之分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷150質量份以及1-乙炔環己醇1.2質量份,進行混合。再者,於其中添加0.8質量份的氫矽化反應觸媒CAT-PL-5,以0.2μm的薄膜過濾器進行過濾,調製熱硬化性聚矽氧樹脂溶液A5。樹脂溶液A5在25℃的黏度為80mPa・s。
[調製例6]
於由在分子側鏈具有2.5莫耳%的乙烯基且Mn為3萬的二甲基聚矽氧烷100質量份及甲苯200質量份所成之溶液中,添加由SiO4/2
單元(Q單元)50莫耳%、(CH3
)3
SiO1/2
單元(M單元)48莫耳%及(CH2
=CH)3
SiO1/2
單元(Vi單元)2莫耳%所成之Mn為7,000的乙烯基甲基聚矽氧烷50質量份及甲苯100質量份所成之溶液、由下述式(M-1)所示之Mn為2,800的有機氫聚矽氧烷230質量份、下述式(M-2)所示之30質量%甲苯溶液的黏度(25℃)為50,000mPa・s之分子鏈末端三甲基矽氧烷基封鎖分支狀聚矽氧烷50質量份及甲苯120質量份所成之溶液以及1-乙炔環己醇0.6質量份,進行混合。再者,於其中添加0.4質量份的氫矽化反應觸媒CAT-PL-5(信越化學工業(股)製,鉑濃度1.0質量%),以0.2μm的薄膜過濾器進行過濾,調製熱硬化性聚矽氧樹脂溶液A6。樹脂溶液A6在25℃的黏度為360mPa・s。
(式中,k、l及m為k=60、l=20、m=6,800)。
[調製例7]
於由在分子兩末端及側鏈具有2.5莫耳%的乙烯基且Mn為3萬的二甲基聚矽氧烷100質量份及甲苯200質量份所成之溶液中,添加由SiO4/2
單元(Q單元)50莫耳%、(CH3
)3
SiO1/2
單元(M單元)48莫耳%及(CH2
=CH)3
SiO1/2
單元(Vi單元)2莫耳%所成之Mn為7,000的乙烯基甲基聚矽氧烷200質量份及甲苯400質量份所成之溶液、由式(M-1)所示之Mn為2,800的有機氫聚矽氧烷430質量份、式(M-2)所示之30質量%甲苯溶液的黏度(25℃)為50,000mPa・s之分子鏈末端三甲基矽氧烷基封鎖分支狀聚矽氧烷100質量份及甲苯120質量份所成之溶液以及1-乙炔環己醇1.2質量份,進行混合。再者,於其中添加0.8質量份的氫矽化反應觸媒CAT-PL-5,以0.2μm的薄膜過濾器進行過濾,調製熱硬化性聚矽氧樹脂溶液A7。樹脂溶液A7在25℃的黏度為280mPa・s。
[比較調製例1]
除了不添加由分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷50質量份及甲苯120質量份所成之溶液以外,以與調製例1同樣之方法調製熱硬化性聚矽氧樹脂溶液CA1。樹脂溶液CA1在25℃的黏度為150mPa・s。
[比較調製例2]
除了不添加分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷30質量份以外,以與調製例2同樣之方法調製熱硬化性聚矽氧樹脂溶液CA2。樹脂溶液CA2在25℃的黏度為180mPa・s。
[比較調製例3]
除了將分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷50質量份變更為下述式(M-3)所示之在側鏈含有環氧基的聚矽氧烷(30質量%甲苯溶液的黏度(25℃):33,000mPa・s)50質量份以外,以與調製例1同樣之方法得到熱硬化性聚矽氧樹脂溶液CA3。樹脂溶液CA3在25℃的黏度為260mPa・s。
[比較調製例4]
除了將分子鏈兩末端三甲基矽氧烷基封鎖直鏈狀二甲基聚矽氧烷30質量份變更為下述式(M-4)所示之在側鏈含有三甲氧基矽烷基的聚矽氧烷(30質量%甲苯溶液的黏度(25℃):2,500mPa・s)30質量份以外,以與調製例2同樣之方法得到熱硬化性聚矽氧樹脂溶液CA4。樹脂溶液CA4在25℃的黏度為190mPa・s。
[2]晶圓積層體之製作及其評價
[實施例1~5及比較例1~4]
在表面上全面形成有高度10μm、直徑40μm的銅柱之直徑200mm的矽晶圓(厚度:725μm)上,分別旋轉塗佈熱硬化性聚矽氧樹脂溶液A1~A5及CA1~CA4,以熱板在100℃加熱2分鐘,以下述表1及2所示的膜厚將假性接著劑層成膜於晶圓凹塊形成面。將直徑200mm(厚度:500μm)的玻璃板當作支撐體,將具有假性接著劑層的矽晶圓及玻璃板各自以假性接著劑層與玻璃板合併的方式,使用EVG公司之晶圓接合裝置EVG520IS,以100℃、10-3
mbar以下、荷重5kN進行真空貼合,製作晶圓積層體。尚且,為了以目視辨別基板接著後之異常,使用玻璃板作為支撐體,但是亦可使用晶圓等之不透光的矽基板。
然後,對於所得之晶圓積層體,進行下述試驗。表1及2中一併記載其結果。又,試驗係藉由下述方法進行。
(1)接著性試驗
使用烘箱,以180℃加熱前述晶圓積層體1小時,冷卻到室溫後,目視確認晶圓界面之接著狀況,將在界面未發生氣泡等異常之情況評價為良好且以「○」表示,將發生異常之情況評價為不良且以「×」表示。
(2)背面研削耐性試驗
使用前述晶圓積層體,以研磨機((股)DISCO製DAG-810),使用金鋼石磨石進行矽晶圓之背面研削。研磨至基板之厚度成為50μm後,以光學顯微鏡(100倍)調查有無裂痕、剝離等異常。將未發生異常之情況評價為良好且以「○」表示,將發生異常之情況評價為不良且以「×」表示。
(3)CVD耐性試驗
(2)將完成背面研削耐性試驗後之晶圓積層體導入至CVD裝置,進行2μm的SiO2
膜之成膜實驗,藉由目視觀察來調查當時有無外觀異常。將未發生外觀異常之情況評價為良好且以「○」表示,將發生空隙、晶圓鼓起、晶圓破損等外觀異常之情況評價為不良且以「×」表示。CVD耐性試驗之條件係如以下。
裝置名稱:SAMCO(股)製電漿CVD、PD270STL
RF500W、內壓40Pa
TEOS(原矽酸四乙酯):O2
=20sccm:680sccm
(4)剝離性試驗
基板之剝離性係首先在完成(3)CVD耐性試驗的晶圓積層體之晶圓側,使用切割框黏貼切割膠帶(日東電工(股)製ELP UB-3083D),藉由真空吸附該切割膠帶面,設置吸附板。然後,於室溫下,以鑷子將玻璃之1點提起,剝離玻璃基板。以「○」表示將50μm厚的晶圓在不破裂下能剝離之情況,將發生破裂等異常之情況評價為不良且以「×」表示。
(5)洗淨去除性試驗
將透過(4)剝離性試驗結束後的切割膠帶而安裝於切割框之直徑200mm晶圓(暴露於CVD耐性試驗條件下者),以剝離面朝上,設置於旋轉塗佈機,將作為洗淨溶劑的SPIS-TA-CLEANER 25(信越化學工業(股)製)噴灑5分鐘後,邊使晶圓旋轉邊噴灑異丙醇(IPA)而進行沖洗。然後,觀察外觀,目視檢查有無殘存的接著劑。將未看到樹脂的殘存者評價為良好且以「○」表示,將看到樹脂的殘存者評價為不良且以「×」表示。
(6)撕開剝離力試驗
於直徑200mm的矽晶圓(厚度:725μm)上分別旋轉塗佈熱硬化性聚矽氧樹脂溶液A1~A5及CA1~CA4,以熱板在100℃加熱2分鐘,以表1及2所示的膜厚將聚矽氧樹脂層成膜於晶圓凹塊形成面。然後,在烘箱中以180℃費1小時使聚矽氧樹脂層硬化,冷卻到室溫後,於前述晶圓上的聚矽氧樹脂層上貼片5條的150mm長×25mm寬度之聚醯亞胺膠帶,去除膠帶未貼的部分之假性接著劑層。使用(股)島津製作所的AUTOGRAPH(AG-1),以25℃、300mm/分之速度從膠帶之一端來180°剝離而剝落120mm,將當時所施力的平均(120mm衝程×5次)當作該聚矽氧樹脂層之撕開剝離力。
(7)儲存彈性模數測定
於玻璃基板上分別旋轉塗佈熱硬化性聚矽氧樹脂溶液A1~A5及CA1~CA4,以熱板在100℃加熱2分鐘,以表1及2所示的膜厚在玻璃基板上形成聚矽氧樹脂層。然後,在烘箱中以180℃費1小時使聚矽氧樹脂層硬化,冷卻到室溫。將所得之包含聚矽氧樹脂層的玻璃基板,使用TA儀器公司製流變計(Ares G2),以在聚矽氧樹脂層施加50gf的荷重之方式,於以25mm鋁板夾住之狀態下,在25℃、1Hz下進行彈性模數測定,將所得的儲存彈性模數之值當作聚矽氧樹脂層的儲存彈性模數。
如表1及2所示,包含本發明的假性接著劑層之實施例1~7之晶圓積層體係被確認具有充分的加工耐久性,且剝離性亦優異,另外剝離後的洗淨去除性亦良好。另一方面,於不具有無官能性有機聚矽氧烷之比較例1~2或包含官能性有機聚矽氧烷之比較例3~4中,附電路的晶圓與支撐體變成強地密著,結果在剝離步驟中發生晶圓破裂,且亦無法剝離。
Claims (8)
- 一種晶圓加工用假性接著劑,其係由包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物所成,用於將晶圓假性接著於支撐體。
- 如請求項1之晶圓加工用假性接著劑,其中前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物包含: (A)在1分子中具有2個以上烯基之有機聚矽氧烷:100質量份, (B)在1分子中含有2個以上鍵結至矽原子的氫原子(SiH基)之有機氫聚矽氧烷:(B)成分中的SiH基合計相對於(A)成分中的烯基合計係以莫耳比成為0.3~10之量, (C)無官能性有機聚矽氧烷:0.1~200質量份,及 (D)氫矽化反應觸媒:相對於(A)、(B)及(C)成分之合計質量,以金屬原子量換算為0.1~5,000ppm。
- 如請求項2之晶圓加工用假性接著劑,其中(C)成分之無官能性有機聚矽氧烷在30質量%甲苯溶液的25℃中之黏度為100~500,000mPa・s。
- 如請求項1~3中任一項之晶圓加工用假性接著劑,其中前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物進一步含有相對於前述(A)、(B)及(C)成分之合計質量,0.001~10質量份的氫矽化反應控制劑作為(E)成分。
- 如請求項1~4中任一項之晶圓加工用假性接著劑,其中於前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物之硬化後,在25℃的對於矽基板之25mm寬度的試驗片之180°撕開剝離力為2gf以上50gf以下。
- 如請求項1~5中任一項之晶圓加工用假性接著劑,其中於前述包含無官能性有機聚矽氧烷之熱硬化性聚矽氧樹脂組成物之硬化後,在25℃的儲存彈性模數為1,000Pa以上1,000MPa以下。
- 一種薄型晶圓的製造方法,其包含: (a)將在表面具有電路形成面及在背面具有電路非形成面之晶圓的前述電路形成面,使用如請求項1~6中任一項之晶圓加工用假性接著劑,能剝離地接著於支撐體,形成晶圓積層體之步驟, (b)使前述假性接著劑熱硬化之步驟, (c)研削或研磨前述晶圓積層體之晶圓的電路非形成面之步驟, (d)對於前述晶圓的電路非形成面,施予加工之步驟,及 (e)將施有前述加工的晶圓從前述支撐體剝離之步驟。
- 一種晶圓積層體,其係具備支撐體、積層於其上之由如請求項1~6中任一項之晶圓加工用假性接著劑所得之假性接著劑層、與在表面具有電路形成面及在背面具有電路非形成面之晶圓的晶圓積層體, 前述假性接著劑層係能剝離地接著於前述晶圓之表面者。
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