TW202044922A - 驅動電路 - Google Patents
驅動電路 Download PDFInfo
- Publication number
- TW202044922A TW202044922A TW109109627A TW109109627A TW202044922A TW 202044922 A TW202044922 A TW 202044922A TW 109109627 A TW109109627 A TW 109109627A TW 109109627 A TW109109627 A TW 109109627A TW 202044922 A TW202044922 A TW 202044922A
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- control signal
- control
- input
- output
- Prior art date
Links
- 230000008859 change Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 3
- 230000017525 heat dissipation Effects 0.000 claims 1
- 230000006870 function Effects 0.000 description 24
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 238000009499 grossing Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 108010076504 Protein Sorting Signals Proteins 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
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- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- BZQFBWGGLXLEPQ-REOHCLBHSA-N phosphoserine Chemical compound OC(=O)[C@@H](N)COP(O)(O)=O BZQFBWGGLXLEPQ-REOHCLBHSA-N 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
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- 230000008054 signal transmission Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
Landscapes
- Electronic Switches (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019107506.8 | 2019-03-25 | ||
| DE102019107506.8A DE102019107506A1 (de) | 2019-03-25 | 2019-03-25 | Treiberschaltung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202044922A true TW202044922A (zh) | 2020-12-01 |
Family
ID=69960642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW109109627A TW202044922A (zh) | 2019-03-25 | 2020-03-23 | 驅動電路 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11496132B2 (https=) |
| EP (1) | EP3935738A1 (https=) |
| JP (1) | JP2022525772A (https=) |
| KR (1) | KR20210136130A (https=) |
| CN (1) | CN113875157A (https=) |
| DE (1) | DE102019107506A1 (https=) |
| TW (1) | TW202044922A (https=) |
| WO (1) | WO2020193488A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102021200677B3 (de) | 2021-01-26 | 2022-01-20 | Siemens Aktiengesellschaft | Ansteuerschaltung für eine Leistungshalbleiterschaltung |
| EP4113910B1 (de) | 2021-06-30 | 2024-07-24 | Siemens Aktiengesellschaft | Vorrichtung zur galvanischen trennung zumindest eines an ein 2-draht-ethernet-bussystem anschliessbaren geräts und switch zum anschluss von feldgeräten |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1087695A (en) | 1976-06-21 | 1980-10-14 | David A. Fox | Multi-mode control logic circuit for solid state relays |
| JPH0680748B2 (ja) * | 1986-03-31 | 1994-10-12 | 株式会社東芝 | 樹脂封止型半導体装置 |
| JPH05122035A (ja) * | 1991-05-10 | 1993-05-18 | Fuji Electric Co Ltd | 駆動電源内蔵型半導体装置 |
| JP3571842B2 (ja) * | 1995-04-11 | 2004-09-29 | 株式会社東芝 | 半導体装置の駆動方法及び半導体装置 |
| JP5714455B2 (ja) * | 2011-08-31 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
| JP5753487B2 (ja) * | 2011-12-28 | 2015-07-22 | 株式会社 日立パワーデバイス | 通信システム、半導体駆動装置及び電力変換装置 |
| JP6048052B2 (ja) * | 2012-10-11 | 2016-12-21 | 富士電機株式会社 | 信号伝送装置およびスイッチング電源装置 |
| US9660639B2 (en) * | 2012-12-21 | 2017-05-23 | Gan Systems Inc. | Distributed driver circuitry integrated with GaN power transistors |
| US9692408B2 (en) * | 2012-12-21 | 2017-06-27 | Gan Systems Inc. | Devices and systems comprising drivers for power conversion circuits |
| DE102016207259A1 (de) * | 2015-10-13 | 2017-04-13 | Conti Temic Microelectronic Gmbh | Verfahren und Schaltungsanordnung zum Betreiben mindestens eines Halbleiterschalters, Verfahren und Stromrichter zum Betreiben einer elektrischen Maschine |
| DE102015013932A1 (de) | 2015-10-28 | 2017-05-04 | Hamburg Innovation Gmbh | Autarkes Steuermodul zum Modulieren einer Hochspannung |
| US10644495B2 (en) * | 2017-08-29 | 2020-05-05 | Texas Instruments Incorporated | Galvanic isolation for relay device |
| CN207853868U (zh) * | 2017-12-12 | 2018-09-11 | 无锡豪帮高科股份有限公司 | 一种过零驱动的光耦继电器 |
-
2019
- 2019-03-25 DE DE102019107506.8A patent/DE102019107506A1/de not_active Withdrawn
-
2020
- 2020-03-23 JP JP2021556223A patent/JP2022525772A/ja active Pending
- 2020-03-23 KR KR1020217033485A patent/KR20210136130A/ko not_active Ceased
- 2020-03-23 EP EP20713878.5A patent/EP3935738A1/de not_active Withdrawn
- 2020-03-23 CN CN202080023180.9A patent/CN113875157A/zh active Pending
- 2020-03-23 TW TW109109627A patent/TW202044922A/zh unknown
- 2020-03-23 US US17/442,368 patent/US11496132B2/en active Active
- 2020-03-23 WO PCT/EP2020/058031 patent/WO2020193488A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022525772A (ja) | 2022-05-19 |
| DE102019107506A1 (de) | 2020-10-01 |
| KR20210136130A (ko) | 2021-11-16 |
| WO2020193488A1 (de) | 2020-10-01 |
| US20220190824A1 (en) | 2022-06-16 |
| EP3935738A1 (de) | 2022-01-12 |
| CN113875157A (zh) | 2021-12-31 |
| US11496132B2 (en) | 2022-11-08 |
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