TW201913783A - 晶圓之加工方法 - Google Patents

晶圓之加工方法 Download PDF

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TW201913783A
TW201913783A TW107131468A TW107131468A TW201913783A TW 201913783 A TW201913783 A TW 201913783A TW 107131468 A TW107131468 A TW 107131468A TW 107131468 A TW107131468 A TW 107131468A TW 201913783 A TW201913783 A TW 201913783A
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wafer
sealing material
cutting groove
cutting
modified layer
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鈴木克彦
伴祐人
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日商迪思科股份有限公司
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Abstract

本發明係一種晶圓之加工方法，其課題為提供：通過含有被覆於晶圓表面之碳黑的封閉材而可實施校準工程之晶圓之加工方法者。 　　解決手段為於經由交叉所形成之複數的分割預定線所區劃之表面的各範圍，形成具有各複數的突起電極之裝置的晶圓之加工方法，其中，具備：自該晶圓的表面側，沿著該分割預定線，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝的切削溝形成工程，和實施該切削溝形成工程之後，以封閉材而封閉包含該切削溝之該晶圓的表面之封閉工程，和實施該封閉工程之後，自該晶圓的背面側，至該裝置晶片之完成厚度為止，研削該晶圓而使該切削溝中之該封閉材露出之研削工程，和實施該研削工程之後，自該晶圓的表面側，經由可視光攝影手段而透過該封閉材，查出對準標記，依據該對準標記而查出欲雷射加工之該分割預定線的校準工程，和實施該校準工程之後，對於該封閉材而言，將具有透過性之波長的雷射束的集光點，定位於該切削溝中之該封閉材之內部，自該晶圓的表面側，沿著該分割預定線而照射雷射束，形成改質層於該封閉材之內部的改質層形成工程，和實施該改質層形成工程之後，於該切削溝中該封閉材，賦予外力而將該改質層作為分割起點，經由該封閉材而分割成圍繞有表面及4側面之各個的裝置晶片之分割工程；在該校準工程係於經由該可視光攝影手段而攝影之範圍，經由斜光手段而自傾斜照射光之同時而實施者。

Description

晶圓之加工方法
本發明係有關加工晶圓而形成5S模製封裝的晶圓之加工方法。
作為實現LSI或NAND型快閃記憶體等之各種裝置的小型化及高密度安裝化之構造，例如將以晶片尺寸而封裝化裝置晶片之晶片尺寸封裝(CSP)提供於實用，廣泛使用於行動電話或智慧型手機等。更且，近年係在此CSP之中，開發有不僅晶片的表面而將全側面，以封閉材進行封閉之CSP，所謂5S模製封裝而加以實用化。
以往的5S模製封裝係經由以下的工程而加以製作。 　　(1) 於半導體晶圓(以下，有略稱為晶圓之情況)之表面，形成稱為裝置(電路)及突起電極之外部連接端子。 　　(2) 自晶圓的表面側，沿著分割預定線而切削晶圓，形成相當於裝置晶片的完成厚度之深度的切削溝。 　　(3) 以摻入碳黑之封閉材而封閉晶圓的表面。 　　(4) 將晶圓的背面側，研削至裝置晶片的完成厚度而使切削溝中之封閉材露出。 　　(5) 晶圓表面係因以摻入碳黑之封閉材而加以封閉之故，除去晶圓表面的外周部分之封閉材而使標靶圖案等之對準標記露出，依據此對準標記而實施查出欲切削之分割預定線的校準。 　　(6) 依據校準，自晶圓的表面側，沿著分割預定線而切削晶圓，分割成以封閉材而封閉表面及全側面之5S模製封裝。
如上述，晶圓的表面係以包含碳黑之封閉材而加以封閉之故，形成於晶圓表面的裝置等係完全無法以肉眼看見。為了解決此問題而可進行校準，而如在上述(5)所記載地，本申請人係開發除去晶圓表面的封閉材之外周部分而使標靶圖案等之對準標記露出，依據此對準標記而查出欲切削之分割預定線，執行校準的技術(參照日本特開2013-074021號公報及日本特開2016-015438號公報)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2013-074021號公報 　　[專利文獻2]日本特開2016-015438號公報
[發明欲解決之課題]
但在記載於上述公開公報之校準方法中，取代於切割用之切削刀片，而將磨邊修整用之寬度廣的切削刀片安裝於心軸，除去晶圓的外周部分之封閉材之工程則必要，而經由切削刀片的交換及磨邊修整，除去外周部分之封閉材的工時則耗費，有著生產性差的問題。
本發明係有鑑於如此的點所作為的構成，而其目的係提供：通過包含被覆於晶圓表面的碳黑之封閉材而可實施校準工程之晶圓的加工方法者。 [為了解決課題之手段]
根據本發明時，提供：於經由交叉所形成之複數的分割預定線所區劃之表面的各範圍，形成具有各複數的突起電極之裝置的晶圓之加工方法，其特徵為具備：自該晶圓的表面側，沿著該分割預定線，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝的切削溝形成工程，和實施該切削溝形成工程之後，以封閉材而封閉包含該切削溝之該晶圓的表面之封閉工程，和實施該封閉工程之後，自該晶圓的背面側，至該裝置晶片之完成厚度為止，研削該晶圓而使而使該切削溝中之該封閉材露出之研削工程，和實施該研削工程之後，自該晶圓的表面側，經由可視光攝影手段而透過該封閉材，查出對準標記，依據該對準標記而查出欲雷射加工之該分割預定線的校準工程，和實施該校準工程之後，對於該封閉材而言，將具有透過性之波長的雷射束的集光點，定位於該切削溝中之該封閉材之內部，自該晶圓的表面側，沿著該分割預定線而照射雷射束，形成改質層於該封閉材之內部的改質層形成工程，和實施該改質層形成工程之後，於該切削溝中該封閉材，賦予外力而將該改質層作為分割起點，經由該封閉材而分割成圍繞有表面及4側面之各個的裝置晶片之分割工程；該校準工程係於經由該可視光攝影手段而攝影之範圍，經由斜光手段而自傾斜照射光之同時而實施之晶圓的加工方法。 [發明效果]
當根據本發明之晶圓的加工方法時，因作為呈以斜光手段而自傾斜照射光之同時，經由可視光攝影手段而透過封閉材，查出形成於晶圓之對準標記，再依據對準標記而可實施校準之故，無須如以往，除去晶圓表面之外周部分的封閉材之情況，而可簡單地實施校準工程。
因而，將對於封閉材而言具有透過性之波長的雷射束，定位於切削溝中之封閉材的內部，自晶圓的表面側，照射雷射束，形成改質層於切削溝中之封閉材的內部，可將該改質層作為分割起點，將晶圓，經由該封閉材而分割為圍繞表面及4側面之各個之裝置晶片者。
以下，參照圖面而加以詳細說明本發明之實施形態。當參照圖1時，顯示適合於以本發明之加工方法而加工之半導體晶圓(以下，有單略稱為晶圓之情況)11之表面側斜視圖。
在半導體晶圓11之表面11a中，將複數之分割預定線(切割道)13形成為格子狀，而對於經由正交之分割預定線13所區劃之各範圍，係形成有IC、LSI等之裝置15。
對於各裝置15之表面係具有複數的電極凸塊(以下，有單略稱為突起電極之情況)17，而晶圓11係於其表面具備形成有備有各複數之突起電極17之複數的裝置15之裝置範圍19，和圍繞裝置範圍19之外周剩餘範圍21。
在本發明實施形態之晶圓的加工方法中，首先，作為第1工程，實施自晶圓11之表面側，沿著分割預定線13，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝之切削溝形成工程。參照圖2而說明此切削溝形成工程。
切削單元10係具備：可拆裝於心軸12之前端部地加以安裝之切削刀片14，和具有可視光攝影手段(可視光攝影單元)18之校準單元16。可視光攝影單元18係具有以可視光攝影之顯微鏡及攝影機。
在實施切削溝形成工程之前，首先由攝影單元18，以可視光而攝影晶圓11之表面，查出形成於各裝置15之標靶圖案等之對準標記，實施依據此對準標記而查出欲切削之分割預定線13的校準。
校準實施後，使高速旋轉於箭頭R1方向之切削刀片14，自晶圓11的表面11a側，沿著分割預定線13而切入至相當於裝置晶片之完成厚度之深度，經由將吸引保持晶圓11之未圖示之夾盤加工傳送至箭頭X1方向之時，實施沿著分割預定線13而形成切削溝23之切削溝形成工程。
將此切削溝形成工程，各分割預定線13之間距算出傳送切削單元10於與加工傳送方向X1正交之方向的同時，沿著伸長於第1方向之分割預定線13而依序實施。
接著，90°旋轉未圖示之夾盤之後，沿著伸長於正交於第1方向之第2方向的分割預定線13，依序實施同樣之切削溝形成工程。
實施切削溝形成工程之後，如圖3所示，塗佈封閉材20於晶圓11之表面11a，實施以封閉材而封閉包含切削溝23之晶圓11的表面11a之封閉工程。封閉材20係有流動性之故，當實施封閉工程時，於切削溝23中，填充有封閉材20。
作為封閉材20係作成以質量%，包含環氧樹脂或環氧樹脂+苯酚樹脂10.3%、二氧化矽填充料85.3%、碳黑0.1~0.2%、其他成分4.2~4.3%之組成。作為其他的成分係例如，包含金屬氫氧化物，三氧化二銻，二氧化矽等。
由如此組成之封閉材20而被覆晶圓11的表面11a，封閉晶圓11的表面11a時，經由極少量含於封閉材20中之碳黑而封閉材20成為黑色之故，通過封閉材20而看到晶圓11的表面11a之情況係通常為困難。
在此，使碳黑混入於封閉材20中之情況係主要為了防止裝置15之靜電破壞，而目前未有市售未含有碳黑之封閉材。
封閉材20之塗佈方法係未特別加以限定，但塗佈封閉材20至突起電極17之高度為止者為佳，接著，經由蝕刻而蝕刻封閉材20，進行突起電極17之露出。
實施封閉工程之後，自晶圓11的背面11b側至裝置晶片之完成厚度為止，研削晶圓11，實施使第1切削溝23中之封閉材20露出的研削工程。
參照圖4而說明此研削工程。貼著表面保護膠帶22於晶圓11的表面11a，由研削裝置之夾盤24，藉由表面保護膠帶22而吸引保持晶圓11。
研削單元26係包含：經由可旋轉於主軸套28中地加以收容而未圖示之馬達，進行旋轉驅動之心軸30，和固定於心軸30之前端的盤座32，和可拆裝於盤座32地加以裝設之研削砂輪34。研削砂輪34係由環狀之轉輪基台36，和固定安裝於轉輪基台36之下端外周之複數的研磨石38而加以構成。
在研削工程中，將夾盤24，於以箭頭a所示之方向，例如以300rpm進行旋轉同時，使研削砂輪34，於以箭頭b所示之方向，例如以6000rpm進行旋轉同時，驅動未圖示之研削單元傳送機構，使研削砂輪34之研磨石38接觸於晶圓11之背面11b。
並且，將研削砂輪34，以特定的研削傳送速度，於下方進行特定量研削傳送之同時，研削晶圓11之背面11b。以接觸式或非接觸式之厚度測定計而測定晶圓11的厚度同時，將晶圓11研削為特定的厚度，例如100μm，使埋設於切削溝23中的封閉材20露出。
實施研削工程之後，自晶圓11的表面11a側，經由可視光攝影手段而通過封閉材20，攝影晶圓11的表面11a，查出形成於晶圓11之表面11a的至少2個之標靶圖案等之對準標記，實施依據此等之對準標記而查出欲雷射加工之分割預定線13之校準工程。
對於此校準工程，參照圖5而詳細說明。在實施校準工程之前，在晶圓11的背面11b側，貼著於裝設外周部於環狀框體F之切割膠帶T。
在校準工程中，如圖5所示，藉由切割膠帶T，以雷射加工裝置之夾盤40而吸引保持晶圓11，使封閉晶圓11的表面11a之封閉材20露出於上方。並且，以夾鉗42而夾鉗固定環狀框體F。
在校準工程中，以與切削裝置之可視光攝影單元18同樣之雷射加工裝置的可視光攝影單元18A之CCD等之攝影元件，而攝影晶圓11之表面11a。但，對於封閉材20中係含有二氧化矽填充料，碳黑等之成分，而更且對於封閉材20之表面係有凹凸之故，在可視光攝影單元18A之垂直照明中，即使透過封閉材20而攝影晶圓11的表面11a，攝影畫像亦成為散焦，而查出標靶圖案等之對準標記之情況則為困難。
因此，在本實施形態之校準工程中，加上於可視光攝影單元18A之垂直照明而自斜光手段31，從傾斜照射光於攝影範圍，改善攝影畫像之散焦，作為可查出對準標記。
自斜光手段31照射的光係白色光為佳，而對於晶圓11的表面11a之入射角係30°~60°之範圍內為佳。理想係可視光攝影單元18A係具備可調整曝光時間等之曝光部。
接著，連結此等之對準標記的直線則呈與加工傳送方向平行地，θ旋轉夾盤40，更且經由僅對準標記與分割預定線13之中心的距離，將圖2所示之切削單元10移動於與加工傳送方向X1正交之方向之時，查出欲切削之分割預定線13。
實施校準工程之後，如圖6(A)所示，自晶圓11的表面11a側，沿著分割預定線13，自雷射加工裝置之雷射頭(集光器)46，將對於封閉材20而言具有透過性之波長(例如，1064nm)的雷射束LB，定位其集光點於切削溝23中的封閉材20之內部而進行照射，經由將夾盤40加工傳送於箭頭X1方向之時，實施形成如圖6(B)所示之改質層25於切削溝23中之封閉材20的內部之改質層形成工程。
將此改質層形成工程，沿著伸長於第1方向之分割預定線13而依序實施之後，90°旋轉夾盤40，沿著伸長於正交於第1方向之第2方向的分割預定線13而依序實施。
改質層形成工程實施後，使用圖7所示之分割裝置50而賦予外力至晶圓11，實施將晶圓11分割為各個裝置晶片27之分割步驟。圖7所示之分割裝置50係具備：保持環狀框體F之框體保持手段52，和擴張裝設於由框體保持手段52所保持之環狀框體F的切割膠帶T之膠帶擴張手段54。
框體保持手段52係由環狀之框體保持構件56，和作為配設於框體保持構件56之外周的固定手段之複數的夾鉗58加以構成。框體保持構件56之上面係形成載置環狀框體F之載置面56a，而於此載置面56a上，載置有環狀框體F。
並且，載置於載置面56a上之環狀框體F係經由夾鉗58而固定於框體保持手段52。如此所構成之框體保持手段52係經由膠帶擴張手段54而可移動於上下方向地加以支持。
膠帶擴張手段54係具備：配設於環狀之框體保持構件56的內側之擴張筒體60。擴張筒體50之上端係由蓋52而加以閉鎖。此擴張筒體60係具有較環狀框體F之內徑為小，而較貼著於裝設於環狀框體F之切割膠帶T的晶圓11之外徑為大的內徑。
擴張筒體60係具有一體性地形成於其下端之支持突緣64。膠帶擴張手段54係更且具備移動環狀之框體保持構件56於上下方向之驅動手段66。此驅動手段66係由配設於支持突緣64上之複數的空氣壓缸68所構成，而此活塞負荷部70係連結於框體保持構件56之下面。
由複數的空氣壓缸68所構成之驅動手段66係將環狀的框體保持構件56，在成為與其載置面56a則為擴張筒體60之上端的蓋62之表面略同一高度之基準位置，和較擴張筒體60之上端為特定量下方的擴張位置之間，移動於上下方向。
對於使用如以上所構成之分割裝置50而實施之晶圓11的分割工程，參照圖8而加以說明。如圖8(A)所示，將藉由切割膠帶T而支持晶圓11之環狀框體F，載置於框體保持構件56之載置面56a上，再經由夾鉗58而固定於框體保持構件56。此時，框體保持構件56係定位於其載置面56a則成為與擴張筒體60之上端略同一高度的基準位置。
接著，驅動空氣壓缸68而將框體保持構件56，下降於圖8(B)所示之擴張位置。經由此，下降固定於框體保持構件56之載置面56a上之環狀框體F之故，而裝設於環狀框體F之切割膠帶T係抵接於擴張筒體60之上端緣而主要擴張於半徑方向。
其結果，對於貼著於切割膠帶T之晶圓11係放射狀地產生拉伸力作用。如此，對於晶圓11，放射狀地產生拉伸力作用時，沿著分割預定線13而形成於封閉材20中之改質層25則成為分割起點，而晶圓11則沿著改質層25，如圖9之擴大圖所示地加以割斷，再經由封閉材20而分割為圍繞表面及4側面之各個的裝置晶片27。
10‧‧‧切削單元
11‧‧‧半導體晶圓
13‧‧‧分割預定線
14‧‧‧切削刀片
15‧‧‧裝置
16‧‧‧校準單元
17‧‧‧電極凸塊
18、18A‧‧‧攝影單元
20‧‧‧封閉材
23‧‧‧切削溝
25‧‧‧改質層
26‧‧‧研削單元
27‧‧‧裝置晶片
31‧‧‧斜光手段
34‧‧‧研削砂輪
38‧‧‧研磨石
46‧‧‧雷射頭(集光器)
50‧‧‧分割裝置
圖1係半導體晶圓之斜視圖。 　　圖2係顯示切削溝形成工程之斜視圖。 　　圖3係顯示封閉工程之斜視圖。 　　圖4係顯示研削工程之一部分剖面側面圖。 　　圖5係顯示校準工程之剖面圖。 　　圖6(A)係顯示改質層形成工程的剖面圖，圖6(B)係顯示改質層形成工程之擴大剖面圖。 　　圖7係分割裝置之斜視圖。 　　圖8係顯示分割步驟之剖面圖。 　　圖9係分割步驟實施後之晶圓的一部分擴大剖面圖。

Claims (1)

  1. 一種晶圓之加工方法，係於經由交叉所形成之複數的分割預定線所區劃之表面的各範圍，形成具有各複數的突起電極之裝置的晶圓之加工方法，其特徵為具備： 　　自該晶圓的表面側，沿著該分割預定線，經由切削刀片而形成相當於裝置晶片之完成厚度之深度的切削溝的切削溝形成工程， 　　和實施該切削溝形成工程之後，以封閉材而封閉包含該切削溝之該晶圓的表面之封閉工程， 　　和實施該封閉工程之後，自該晶圓的背面側至該裝置晶片之完成厚度為止研削該晶圓而使該切削溝中之該封閉材露出之研削工程， 　　和實施該研削工程之後，自該晶圓的表面側，經由可視光攝影手段而透過該封閉材，查出對準標記，依據該對準標記而查出欲雷射加工之該分割預定線的校準工程， 　　和實施該校準工程之後，對於該封閉材而言，將具有透過性之波長的雷射束的集光點，定位於該切削溝中之該封閉材之內部，自該晶圓的表面側，沿著該分割預定線而照射雷射束，形成改質層於該封閉材之內部的改質層形成工程， 　　和實施該改質層形成工程之後，於該切削溝中之該封閉材，賦予外力而將該改質層作為分割起點，經由該封閉材而分割成圍繞有表面及4側面之各個的裝置晶片之分割工程； 　　該校準工程係於經由該可視光攝影手段而攝影之範圍，經由斜光手段而自傾斜照射光之同時而實施者。
TW107131468A 2017-09-08 2018-09-07 晶圓之加工方法 TWI789422B (zh)

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