TW201902607A - 附樹脂層之脆性材料基板之分斷方法及分斷裝置 - Google Patents

附樹脂層之脆性材料基板之分斷方法及分斷裝置 Download PDF

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Publication number
TW201902607A
TW201902607A TW107108804A TW107108804A TW201902607A TW 201902607 A TW201902607 A TW 201902607A TW 107108804 A TW107108804 A TW 107108804A TW 107108804 A TW107108804 A TW 107108804A TW 201902607 A TW201902607 A TW 201902607A
Authority
TW
Taiwan
Prior art keywords
breaking
brittle material
resin layer
material substrate
laser beam
Prior art date
Application number
TW107108804A
Other languages
English (en)
Chinese (zh)
Inventor
林弘義
Original Assignee
日商三星鑽石工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商三星鑽石工業股份有限公司 filed Critical 日商三星鑽石工業股份有限公司
Publication of TW201902607A publication Critical patent/TW201902607A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
TW107108804A 2017-03-30 2018-03-15 附樹脂層之脆性材料基板之分斷方法及分斷裝置 TW201902607A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-068794 2017-03-30
JP2017068794A JP6888808B2 (ja) 2017-03-30 2017-03-30 樹脂層付き脆性材料基板の分断方法並びに分断装置

Publications (1)

Publication Number Publication Date
TW201902607A true TW201902607A (zh) 2019-01-16

Family

ID=63865228

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107108804A TW201902607A (zh) 2017-03-30 2018-03-15 附樹脂層之脆性材料基板之分斷方法及分斷裝置

Country Status (4)

Country Link
JP (2) JP6888808B2 (ko)
KR (1) KR20180111496A (ko)
CN (1) CN108705208A (ko)
TW (1) TW201902607A (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7326053B2 (ja) * 2019-07-11 2023-08-15 株式会社ディスコ 被加工物の加工方法
KR20220035332A (ko) * 2019-07-16 2022-03-22 닛토덴코 가부시키가이샤 복합재의 분단 방법
JPWO2021009960A1 (ko) * 2019-07-16 2021-01-21
CN111007686A (zh) * 2019-11-14 2020-04-14 Tcl华星光电技术有限公司 阵列基板、显示面板及制备方法
WO2023176068A1 (ja) * 2022-03-16 2023-09-21 ナルックス株式会社 マイクロレンズ及びマイクロレンズアレイの製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63188487A (ja) * 1987-01-29 1988-08-04 Mitsubishi Electric Corp レ−ザ加工ヘツド
JP2002110588A (ja) * 2000-09-27 2002-04-12 Nec Kansai Ltd チップ製造装置
JP5232375B2 (ja) * 2006-10-13 2013-07-10 アイシン精機株式会社 半導体発光素子の分離方法
JP2009166169A (ja) * 2008-01-15 2009-07-30 Mitsuboshi Diamond Industrial Co Ltd カッター装置
CN102046345A (zh) * 2008-04-15 2011-05-04 三星钻石工业股份有限公司 脆性材料基板的加工方法
JP2010201479A (ja) * 2009-03-05 2010-09-16 Mitsuboshi Diamond Industrial Co Ltd レーザ光加工装置及びレーザ光加工方法
JP5170195B2 (ja) * 2010-09-24 2013-03-27 三星ダイヤモンド工業株式会社 樹脂付き脆性材料基板の分割方法
CN104647840B (zh) * 2011-05-13 2017-06-06 日本电气硝子株式会社 层叠体、层叠体的切断方法和层叠体的加工方法、以及脆性板状物的切断装置和切断方法
JP5633849B2 (ja) * 2011-08-02 2014-12-03 住友電工ハードメタル株式会社 レーザ用光学部品
JP2013136077A (ja) * 2011-12-28 2013-07-11 Mitsuboshi Diamond Industrial Co Ltd 分断装置
JP6090325B2 (ja) * 2012-08-21 2017-03-08 旭硝子株式会社 複合シートの切断方法、ガラスシートの切断方法、複合シートの切断片
US11053156B2 (en) * 2013-11-19 2021-07-06 Rofin-Sinar Technologies Llc Method of closed form release for brittle materials using burst ultrafast laser pulses
US10144088B2 (en) * 2013-12-03 2018-12-04 Rofin-Sinar Technologies Llc Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses
US20150166393A1 (en) * 2013-12-17 2015-06-18 Corning Incorporated Laser cutting of ion-exchangeable glass substrates
JP6428112B2 (ja) * 2014-09-30 2018-11-28 三星ダイヤモンド工業株式会社 パターニング基板のブレイク装置
CN106132627B (zh) * 2015-01-13 2018-09-07 罗芬-新纳技术有限责任公司 用于对脆性材料进行划割并随后进行化学蚀刻的方法和系统
EP3274306B1 (en) * 2015-03-24 2021-04-14 Corning Incorporated Laser cutting and processing of display glass compositions
JP6548944B2 (ja) * 2015-04-09 2019-07-24 株式会社ディスコ レーザー加工装置
JP6549014B2 (ja) * 2015-10-13 2019-07-24 株式会社ディスコ 光デバイスウエーハの加工方法

Also Published As

Publication number Publication date
KR20180111496A (ko) 2018-10-11
JP6888808B2 (ja) 2021-06-16
JP2021114633A (ja) 2021-08-05
CN108705208A (zh) 2018-10-26
JP2018170474A (ja) 2018-11-01

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