TW201841998A - 含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷 - Google Patents
含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷 Download PDFInfo
- Publication number
- TW201841998A TW201841998A TW107106814A TW107106814A TW201841998A TW 201841998 A TW201841998 A TW 201841998A TW 107106814 A TW107106814 A TW 107106814A TW 107106814 A TW107106814 A TW 107106814A TW 201841998 A TW201841998 A TW 201841998A
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- ruthenium
- containing film
- forming
- carbon atoms
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/28—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017039801 | 2017-03-02 | ||
JP2017-039801 | 2017-03-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201841998A true TW201841998A (zh) | 2018-12-01 |
Family
ID=63370038
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107106814A TW201841998A (zh) | 2017-03-02 | 2018-03-01 | 含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷 |
Country Status (2)
Country | Link |
---|---|
TW (1) | TW201841998A (fr) |
WO (1) | WO2018159356A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11914295B2 (en) | 2018-11-21 | 2024-02-27 | Shin-Etsu Chemical Co., Ltd. | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03206461A (ja) * | 1990-01-09 | 1991-09-09 | Fuji Photo Film Co Ltd | 感光性組成物 |
GB9124422D0 (en) * | 1991-11-14 | 1992-01-08 | Dow Corning | Radiation curable compositions |
JP4232276B2 (ja) * | 1999-05-26 | 2009-03-04 | Jsr株式会社 | 加水分解性シラン化合物およびその製造方法 |
CN101990551B (zh) * | 2008-03-04 | 2012-10-03 | 陶氏康宁公司 | 倍半硅氧烷树脂 |
JP5237743B2 (ja) * | 2008-10-02 | 2013-07-17 | 東京応化工業株式会社 | レジスト下層膜形成用組成物 |
WO2012114864A1 (fr) * | 2011-02-24 | 2012-08-30 | 日産化学工業株式会社 | Composé silane et composition pour la formation d'une monocouche ou d'une multicouche à l'aide de celui-ci |
US9290623B2 (en) * | 2012-12-19 | 2016-03-22 | Nissan Chemical Industries, Ltd. | Composition for forming silicon-containing resist underlayer film having cyclic diester group |
WO2016111210A1 (fr) * | 2015-01-09 | 2016-07-14 | Jsr株式会社 | Composition pour former un film contenant du silicium et procédé de formation de motif utilisant ladite composition |
JP6455160B2 (ja) * | 2015-01-14 | 2019-01-23 | Jsr株式会社 | 硬化膜形成用感放射線性組成物、硬化膜、表示素子及び硬化膜の形成方法 |
-
2018
- 2018-02-19 WO PCT/JP2018/005724 patent/WO2018159356A1/fr active Application Filing
- 2018-03-01 TW TW107106814A patent/TW201841998A/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11914295B2 (en) | 2018-11-21 | 2024-02-27 | Shin-Etsu Chemical Co., Ltd. | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process |
Also Published As
Publication number | Publication date |
---|---|
WO2018159356A1 (fr) | 2018-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI412893B (zh) | 含有熱酸產生劑之光阻下層材料,形成光阻下層膜之基板及圖型形成方法 | |
KR101860170B1 (ko) | 레지스트 하층막 형성용 조성물, 패턴 형성 방법 및 레지스트 하층막 | |
TWI521018B (zh) | Poly Silicon alumoxane composition and pattern forming method | |
TW201324057A (zh) | 多層抗蝕製程用抗蝕底層膜形成用組成物、抗蝕底層膜及其形成方法,以及圖型形成方法 | |
TWI537325B (zh) | 用於硬光罩組合物的單體、硬光罩組合物及形成圖案的方法 | |
US20130017500A1 (en) | Method of forming resist pattern | |
US8900795B2 (en) | Resist composition, method of forming resist pattern and novel compound | |
KR100819162B1 (ko) | 반사방지성을 갖는 하드마스크 조성물 및 이를 이용한재료의 패턴화 방법 | |
TWI411628B (zh) | 具有抗反射特性的底層組成物 | |
TWI811239B (zh) | 感光化射線性或感放射線性樹脂組成物、抗蝕劑膜、圖案形成方法及電子元件的製造方法 | |
TWI443121B (zh) | 用於光阻底層之含芳香環的化合物、含有其之光阻底層組成物及使用其圖案化裝置之方法 | |
TWI639056B (zh) | 有機層組成物及圖案形成方法 | |
US8617792B2 (en) | Aromatic ring-containing polymer for resist underlayer, resist underlayer composition including the same, and method of patterning device using the same | |
KR20110013819A (ko) | 칼릭스 알렌이 함유된 고 내에칭성 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료 형상의 제조방법 | |
TW201841998A (zh) | 含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷 | |
KR102556781B1 (ko) | Euv 리소그래피용 규소 함유 막 형성 조성물, euv 리소그래피용 규소 함유 막 및 패턴 형성 방법 | |
US20200117091A1 (en) | Pattern-forming method, and silicon-containing film-forming composition | |
JP6897071B2 (ja) | レジストプロセス用膜形成材料、パターン形成方法及び重合体 | |
WO2020170934A1 (fr) | Composition pour formation de film et procede de production de substrat a semi-conducteurs | |
KR101333703B1 (ko) | 레지스트 하층막용 방향족 고리 함유 중합체, 이를 포함하는 레지스트 하층막 조성물 및 이 조성물을 이용한 소자의 패턴 형성 방법 | |
TW202013098A (zh) | 半導體基板的處理方法 | |
JPWO2018155377A1 (ja) | レジストプロセス用膜形成材料、パターン形成方法及びポリシロキサン | |
TWI815981B (zh) | 多層抗蝕劑製程用底層膜形成組成物及圖案形成方法 | |
TW201800863A (zh) | 抗蝕劑製程用膜形成材料、圖案形成方法及聚合物 | |
JP7342953B2 (ja) | 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法 |