TW201841998A - 含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷 - Google Patents

含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷 Download PDF

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Publication number
TW201841998A
TW201841998A TW107106814A TW107106814A TW201841998A TW 201841998 A TW201841998 A TW 201841998A TW 107106814 A TW107106814 A TW 107106814A TW 107106814 A TW107106814 A TW 107106814A TW 201841998 A TW201841998 A TW 201841998A
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TW
Taiwan
Prior art keywords
group
ruthenium
containing film
forming
carbon atoms
Prior art date
Application number
TW107106814A
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English (en)
Chinese (zh)
Inventor
大坪裕介
栗田俊輔
Original Assignee
日商Jsr股份有限公司
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Publication date
Application filed by 日商Jsr股份有限公司 filed Critical 日商Jsr股份有限公司
Publication of TW201841998A publication Critical patent/TW201841998A/zh

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/22Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/28Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen sulfur-containing groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • C09D183/08Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
TW107106814A 2017-03-02 2018-03-01 含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷 TW201841998A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017039801 2017-03-02
JP2017-039801 2017-03-02

Publications (1)

Publication Number Publication Date
TW201841998A true TW201841998A (zh) 2018-12-01

Family

ID=63370038

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107106814A TW201841998A (zh) 2017-03-02 2018-03-01 含矽膜形成用組成物、含矽膜、圖案形成方法及聚矽氧烷

Country Status (2)

Country Link
TW (1) TW201841998A (fr)
WO (1) WO2018159356A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11914295B2 (en) 2018-11-21 2024-02-27 Shin-Etsu Chemical Co., Ltd. Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03206461A (ja) * 1990-01-09 1991-09-09 Fuji Photo Film Co Ltd 感光性組成物
GB9124422D0 (en) * 1991-11-14 1992-01-08 Dow Corning Radiation curable compositions
JP4232276B2 (ja) * 1999-05-26 2009-03-04 Jsr株式会社 加水分解性シラン化合物およびその製造方法
CN101990551B (zh) * 2008-03-04 2012-10-03 陶氏康宁公司 倍半硅氧烷树脂
JP5237743B2 (ja) * 2008-10-02 2013-07-17 東京応化工業株式会社 レジスト下層膜形成用組成物
WO2012114864A1 (fr) * 2011-02-24 2012-08-30 日産化学工業株式会社 Composé silane et composition pour la formation d'une monocouche ou d'une multicouche à l'aide de celui-ci
US9290623B2 (en) * 2012-12-19 2016-03-22 Nissan Chemical Industries, Ltd. Composition for forming silicon-containing resist underlayer film having cyclic diester group
WO2016111210A1 (fr) * 2015-01-09 2016-07-14 Jsr株式会社 Composition pour former un film contenant du silicium et procédé de formation de motif utilisant ladite composition
JP6455160B2 (ja) * 2015-01-14 2019-01-23 Jsr株式会社 硬化膜形成用感放射線性組成物、硬化膜、表示素子及び硬化膜の形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11914295B2 (en) 2018-11-21 2024-02-27 Shin-Etsu Chemical Co., Ltd. Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

Also Published As

Publication number Publication date
WO2018159356A1 (fr) 2018-09-07

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