TW201841747A - 層合體及其製造方法 - Google Patents

層合體及其製造方法 Download PDF

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TW201841747A
TW201841747A TW107110251A TW107110251A TW201841747A TW 201841747 A TW201841747 A TW 201841747A TW 107110251 A TW107110251 A TW 107110251A TW 107110251 A TW107110251 A TW 107110251A TW 201841747 A TW201841747 A TW 201841747A
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layer
resin
trade name
aforementioned
forming
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TW107110251A
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TWI787245B (zh
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安田浩之
菅生道博
加藤英人
近藤和紀
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日商信越化學工業股份有限公司
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    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
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Abstract

本發明係提供製造容易,熱製程(process)耐性優異,支撐體之剝離也容易,可提高半導體封裝之生產性之適於半導體裝置製造的層合體及其製造方法。   本發明係一種層合體,其係具備支撐體、形成於該支撐體上之包含藉由光之照射可分解之遮光性樹脂的樹脂層、形成於該樹脂層上之金屬層、形成於該金屬層上之絕緣層及再配線層的層合體,其中前述樹脂層之波長355nm之光的透過率為20%以下。

Description

層合體及其製造方法
本發明係有關半導體領域之層合體及其製造方法。
為了實現更加高密度、大容量化,三維半導體封裝(semiconductor packaging)成為必須。三維封裝技術係指將1片半導體晶片薄型化,再將此晶片以矽貫通電極(TSV:through silicon via)連線,同時層合為多層的半導體製作技術。為了實現此技術時,必須將形成有半導體電路之基板藉由非電路形成面(亦稱為「背面」)研削而薄型化,進一步對背面形成含有TSV之電極的步驟。以往,矽基板之背面研削步驟係於研削面之相反側貼上背面保護膠帶,防止研削時之晶圓破損。但是此膠帶係將有機樹脂薄膜用於支撐基材,雖具柔軟性,但相反地,強度或耐熱性不充分,不適於進行TSV形成步驟或於背面形成配線層的步驟。
因此,提案藉由將半導體基板經由接著層而接合於矽、玻璃等之支撐體,而可充份耐背面研削、TSV或背面形成電極之步驟的系統(專利文獻1、2)。但是此等TSV的技術雖被期待作為晶片間之高密度連接技術,其中對處理器之頻寬記憶體(Bandwidth Memory)連接技術,但是現狀係因高成本而成為瓶頸,僅止於適用於一部分的用途。
因此,近年,FOWLP(Fan-Out Wafer Level Package)受矚目(專利文獻3)。此FOWLP係形成於IC晶片上之微細的絕緣再配線層(RDL:Redistribution Layer)擴展至晶片外形之外側而形成之構造的封裝,藉此,複數之晶片間以高密度的配線形成,或相較於以往的封裝,可實現大幅度的小型・薄型化。
其中,檢討使晶片與再配線之對位精度提高,為了也可適用於端子數多的應用處理器(application processor),而在支撐基板上直接處理RDL形成,並將裝置晶片進行排列、樹脂封裝被稱為RDL first的手法。RDL之形成、封裝之後,有必要剝離此支撐基板,但是此時,貼合支撐體與半導體基板之後,因與加工半導體基板之背面側的情形的手法不同,故有在先前所述之TSV形成技術使用的接著劑系統無法因應的問題。
其中,最近檢討一種構造物,其係在支撐體上具有包含藉由雷射可分解之樹脂的剝離層(專利文獻4)。此時,雖在剝離層上直接形成RDL層,但是雷射照射後,支撐體剝離後之RDL層上所殘留的剝離層為可以溶劑洗淨的熱塑性樹脂的情形,形成RDL層時之絕緣層之高溫硬化條件下,剝離層產生變形的結果,金屬配線等也產生變形問題的疑慮。而剝離層為熱硬化性樹脂的情形,雖耐熱性提高,但是雷射照射後,支撐體剝離後之RDL層上因硬化的剝離層殘留,故預測洗淨除去困難。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2003-177528號公報   [專利文獻2]國際公開第2015/072418號   [專利文獻3]日本特開2013-58520號公報   [專利文獻4]日本特開2016-146402號公報
[發明所欲解決之課題]
本發明係有鑑於前述問題點而完成者,本發明之目的係提供製造容易,熱製程耐性優異,支撐體之剝離也容易,可提高半導體封裝之生產性之適於半導體裝置製造的層合體及其製造方法。 [用以解決課題之手段]
本發明人等為了達成前述目的而精心檢討的結果,發現藉由使用包含特定之樹脂層與金屬層之接著層的層合體,可達成前述目的,而完成本發明。
因此,本發明係提供下述層合體及其製造方法。   1.一種層合體,其係具備支撐體、形成於該支撐體上之包含藉由光之照射可分解之遮光性樹脂的樹脂層、形成於該樹脂層上之金屬層、形成於該金屬層上之絕緣層及再配線層的層合體,其中前述樹脂層之波長355nm之光的透過率為20%以下。   2.如前述1之層合體,其中前述金屬層為包含選自鈦、鋁、銅、鎢、鉭、鉬、鉻、鈮及金之至少1種的金屬。   3.如前述2之層合體,其中前述金屬層為包含選自鈦、鋁、銅及鈦與鎢之合金之至少1個。   4.如前述1~3中任一項之層合體,其中前述絕緣層為包含選自苯並環丁烯、環氧樹脂、聚醯亞胺樹脂、聚矽氧樹脂及聚苯并噁唑之至少1種的樹脂。   5.如前述1~4中任一項之層合體,其中前述遮光性樹脂為主鏈包含縮合環的樹脂。   6.如前述1~5中任一項之層合體,其中前述樹脂層為由含有包含下述式(1)表示之重複單位之樹脂A之樹脂組成物A的硬化物所成者,(式中,R1 ~R3 各自獨立為氫原子、羥基或碳數1~20之1價有機基,但是R1 ~R3 之至少1個為羥基,R4 為氫原子、或可具有取代基之碳數1~30之1價有機基)。   7.如前述1~6中任一項之層合體之製造方法,其係包含以下的步驟:   (a)支撐體上直接形成樹脂層的步驟、   (b)前述樹脂層上形成金屬層的步驟、   (c)前述金屬層上形成絕緣層,該絕緣層上形成圖型的步驟、   (d)於形成有前述圖型之絕緣層上,形成導電層的步驟、   (e)前述導電層上形成抗電鍍劑層,該抗電鍍劑層上形成圖型,於前述抗電鍍劑層之圖型間使前述導電層露出的步驟及   (f)於前述抗電鍍劑層之圖型間露出之導電層上,形成再配線層的步驟。 [發明效果]
依據本發明時,可提供由支撐體至絕緣層及再配線層,強固接著、支撐,且具有熱耐性,半導體基板可容易自支撐體分離的層合體。 [實施發明之形態]
[層合體]   本發明之層合體係具備支撐體、形成於該支撐體上之包含藉由光之照射可分解之遮光性樹脂的樹脂層、形成於該樹脂層上之金屬層、形成於該金屬層上之絕緣層及再配線層者。
[支撐體]   前述支撐體,可列舉透明基板、矽基板、陶瓷基板等,但是從剝離支撐體時,照射之雷射之透過性的觀點,以透明基板為佳。前述透明基板,通常使用玻璃基板或石英基板,其厚度通常以300~1,500μm為佳,更佳為500~1,100μm。支撐體之形狀,無特別限定,較佳為圓型或正方型。
[樹脂層]   樹脂層為包含藉由光之照射可分解之遮光性樹脂之具有遮光性之樹脂層(遮光層)。前述樹脂層係以波長355nm之光之透過率為20%以下者為佳,更佳為18%以下者,又更佳為15%以下者。又,前述樹脂層係以波長300~500nm之光之透過率為20%以下者為佳。
就耐熱性、接著性、耐藥品性等之觀點,樹脂層所包含之樹脂係於主鏈包含縮合環者為佳。樹脂層,特別是由含有包含下述式(1)表示之重複單位之樹脂A之樹脂組成物A的硬化物所成者為佳。又,式(1)表示之重複單位可僅含有1種,也可含有2種以上。
式(1)中,R1 ~R3 各自獨立為氫原子、羥基或碳數1~20,較佳為碳數1~10之1價有機基。但是R1 ~R3 之至少1個為羥基。
前述1價有機基,可列舉甲基、乙基、n-丙基、異丙基、n-丁基、sec-丁基、tert-丁基、n-戊基、新戊基、n-己基、n-庚基、n-辛基、n-壬基、n-癸基、n-十二烷基、n-十五烷基、n-二十烷基、環戊基、環己基、環戊基甲基、環己基甲基、環戊基乙基、環己基乙基、環戊基丁基、環己基丁基、金剛烷基等之直鏈狀、分支狀或環狀之碳數1~20之烷基;甲氧基等之直鏈狀、分支狀或環狀之碳數1~5之烷氧基;環氧丙氧基等之含環氧基之基;苯基、萘基等之芳基等。R1 ~R3 係以氫原子、羥基、甲基等為佳。
式(1)中,R4 為氫原子、或可具有取代基之碳數1~30,較佳為碳數1~10之1價有機基。R4 表示之1價有機基,可列舉烷基、苯基、萘基、蒽基、降莰基等,此等之基之氫原子之一部分可經烷基、芳基、醛基、鹵素原子、硝基、腈基、羥基等取代。
樹脂A通常在無溶劑或溶劑中,以酸或鹼作為觸媒使用,室溫或必要時,可在冷卻或加熱下,可藉由使萘酚或其衍生物與醛化合物進行聚縮合反應而得到。
前述萘酚或其衍生物,可列舉1-萘酚、2-萘酚、2-甲基-1-萘酚、4-甲氧基-1-萘酚、7-甲氧基-2-萘酚、1,2-二羥基萘、1,3-二羥基萘、2,3-二羥基萘、1,4-二羥基萘、1,5-二羥基萘、1,6-二羥基萘、2,6-二羥基萘、1,7-二羥基萘、2,7-二羥基萘、1,8-二羥基萘、5-胺基-1-萘酚、2-甲氧基羰基-1-萘酚、1-(4-羥基苯基)萘、6-(4-羥基苯基)-2-萘酚、6-(環己基)-2-萘酚、1,1’-聯-2-萘酚、6,6’-聯-2-萘酚、9,9-雙(6-羥基-2-萘基)茀、6-羥基-2-乙烯基萘、1-羥基甲基萘、2-羥基甲基萘等。前述萘酚或其衍生物可1種單獨使用或組合2種以上使用。
前述醛化合物可列舉下述式表示者。   R4 -CHO   (式中,R4 係與前述相同)。
前述醛化合物,具體而言,可列舉甲醛、三聚甲醛、聚甲醛、乙醛、丙醛、金剛烷甲醛、苯甲醛、苯基乙醛、α-苯基丙醛、β-苯基丙醛、o-氯苯甲醛、m-氯苯甲醛、p-氯苯甲醛、o-硝基苯甲醛、m-硝基苯甲醛、p-硝基苯甲醛、o-甲基苯甲醛、m-甲基苯甲醛、p-甲基苯甲醛、p-乙基苯甲醛、p-n-丁基苯甲醛、1-萘甲醛、2-萘甲醛、2-羥基-1-萘甲醛、4-羥基-1-萘甲醛、1-羥基-2-萘甲醛、3-羥基-2-萘甲醛、6-羥基-2-萘甲醛、蒽甲醛、芘甲醛、糠醛、甲縮醛(methylal)、鄰苯二甲醛、間苯二甲醛、對苯二甲醛、萘二甲醛、蒽二甲醛、芘二甲醛等。前述醛化合物可1種單獨使用或組合2種以上使用。
前述聚縮合反應所使用之溶劑,可列舉例如甲醇、乙醇、異丙醇、丁醇、乙二醇、丙二醇、二乙二醇、丙三醇、甲基溶纖劑、乙基溶纖劑、丁基溶纖劑、丙二醇單甲醚等之醇類;二乙醚、二丁醚、二乙二醇二乙醚、二乙二醇二甲醚、四氫呋喃(THF)、1,4-二噁烷等之醚類;二氯甲烷、氯仿、二氯乙烷、三氯乙烯等之氯系溶劑;己烷、庚烷、苯、甲苯、二甲苯、異丙苯等之烴類;乙腈等之腈類;丙酮、乙基甲基酮、異丁基甲基酮等之酮類;乙酸乙酯、乙酸n-丁酯、丙二醇甲醚乙酸酯等之酯類;γ-丁內酯等之內酯類;二甲基亞碸、N,N-二甲基甲醯胺、六甲基磷醯三胺等之非質子性極性溶劑。此等之溶劑,可1種單獨使用或混合2種以上使用。此等之溶劑係萘酚或其衍生物與醛化合物之合計100質量份,較佳為0~2,000質量份,更佳為10~2,000質量份之範圍內使用。
前述聚縮合反應所使用之酸觸媒,可列舉例如鹽酸、氫溴酸、硫酸、硝酸、磷酸、雜多酸等之無機酸類、草酸、三氟乙酸、甲磺酸、苯磺酸、p-甲苯磺酸、三氟甲磺酸等之有機酸類、三氯化鋁、乙氧化鋁、異丙氧化鋁、三氟化硼、三氯化硼、三溴化硼、四氯化錫、四溴化錫、二氯化二丁基錫、二甲氧化二丁基錫、二丁基氧化錫、四氯化鈦、四溴化鈦、甲氧化鈦(IV)、乙氧化鈦(IV)、異丙氧化鈦(IV)、氧化鈦(IV)等之路易斯酸類。
又,前述聚縮合反應所使用之鹼觸媒,可列舉例如氫氧化鈉、氫氧化鉀、氫氧化鋇、碳酸鈉、碳酸氫鈉、碳酸鉀、氫化鋰、氫化鈉、氫化鉀、氫化鈣等之無機鹼類、甲基鋰、n-丁基鋰、氯甲烷鎂、溴化乙基鎂等之烷基金屬類、甲氧化鈉、乙氧化鈉、tert-丁氧化鉀等之烷氧化物類、三乙基胺、二異丙基乙基胺、N,N-二甲基苯胺、吡啶、4-二甲基胺基吡啶等之有機鹼類。
觸媒之使用量係相對於萘酚或其衍生物與醛化合物之合計100質量份,較佳為0.001~100質量份,更佳為0.005~50質量份之範圍。反應溫度係以-50℃至溶劑之沸點左右為佳,更佳為室溫至100℃。
聚縮合反應方法,可列舉將萘酚或其衍生物、醛類、觸媒一次投入的方法或在觸媒存在下,將萘酚或其衍生物、醛類滴下的方法。
萘酚或其衍生物與醛化合物之使用比率係相對於萘酚或其衍生物之合計,醛化合物以莫耳比較佳為0.01~5,更佳為0.05~2,又更佳為0.05~1,最佳為0.1~0.9。
聚縮合反應終了後,為了除去存在於體系內之未反應原料、觸媒等,可使反應槽之溫度上昇至130~230℃,在減壓下(例如1~50mmHg左右)下除去揮發分,或添加適當的溶劑或水,分離聚合物,或將聚合物溶解於良溶劑後,在弱溶劑中再沈澱。此等可以所得之反應生成物的性質分開使用。
樹脂A之重量平均分子量(Mw)係以500~500,000為佳,更佳為1,000~100,000。樹脂A之分散度係以1.2~20之範圍為佳,但是除去單體成分、寡聚物成分或Mw未達500之低分子量體時,可抑制烘烤中之揮發成分,可防止因烘烤杯周邊之污染或揮發成分之落下所致之表面缺陷之發生。又,本發明中,Mw係將THF作為溶劑使用,藉由凝膠滲透層析儀(GPC)所得之聚苯乙烯換算測量值。
樹脂組成物A係以包含藉由將樹脂A進行熱反應使交聯的交聯劑為佳。前述交聯劑可適合使用分子內具有2個以上之官能基的環氧化合物、環氧樹脂、羥甲基三聚氰胺等之胺基化合物或胺基樹脂等,為了促進此等之交聯劑與樹脂A之交聯反應,再添加觸媒較佳。
前述環氧化合物或環氧樹脂係2官能、3官能、4官能以上之多官能環氧樹脂,可列舉例如日本化藥(股)製之EOCN-1020(參照下述式)、EOCN-102S、XD-1000、NC-2000-L、EPPN-201、GAN、NC6000或、下述式表示者等。
將前述環氧化合物或環氧樹脂作為交聯劑使用時,其調配量係相對於樹脂A100質量份,較佳為0.1~50質量份,更佳為0.1~30質量份,又更佳為1~30質量份。交聯劑可1種單獨使用或組合2種以上使用。調配量為前述範圍時,可得到充分的交聯密度,所得之硬化物充分地產生功能。
將前述環氧樹脂作為交聯劑使用時,添加作為觸媒之硬化促進劑為佳。藉由含有環氧樹脂硬化促進劑,可適當地且均勻地進行硬化反應。
環氧樹脂硬化促進劑,可列舉例如2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑、及此等之化合物之乙基異氰酸酯化合物、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2-苯基-4,5-二羥基甲基咪唑等之咪唑化合物、1,8-二氮雜雙環[5.4.0]十一烯-7(DBU)、1,5-二氮雜雙環[4.3.0]壬烯-5(DBN)、DBU之有機酸鹽、DBU之酚樹脂鹽、DBU衍生物之四苯基硼酸鹽等之DBU系化合物、三苯基膦、三丁基膦、三(p-甲基苯基)膦、三(p-甲氧基苯基)膦、三(p-乙氧基苯基)膦、三苯基膦・三苯基硼酸鹽、四苯基膦・四苯基硼酸鹽等之三有機膦類、4級鏻鹽、三乙烯銨・三苯基硼酸鹽等之三級胺及其四苯基硼酸鹽等。前述環氧樹脂硬化促進劑可1種單獨使用,亦可併用2種以上。
使用環氧樹脂硬化促進劑時,其調配量係相對於樹脂A100質量份,較佳為0.1~10質量份,更佳為0.2~5質量份。
又,本發明使用的羥甲基三聚氰胺等之胺基化合物或胺基樹脂,可列舉選自由藉由福馬林或福馬林-醇改質之胺基縮合物及1分子中具有平均2個以上之羥甲基或烷氧基羥甲基之苯酚化合物所組成之群組之1種以上的化合物。
前述胺基化合物或胺基樹脂係以Mw為150~10,000者為佳,更佳為200~3,000者。Mw為前述範圍時,可得到充分的硬化性,且組成物之硬化後的耐熱性也良好。
前述藉由福馬林或福馬林-醇改質之胺基縮合物,可列舉例如藉由福馬林或福馬林-醇改質之三聚氰胺縮合物、或藉由福馬林或福馬林-醇改質之脲縮合物。
前述藉由福馬林或福馬林-醇改質之三聚氰胺縮合物,例如可依據習知的方法,將三聚氰胺單體以福馬林進行羥甲基化而改質,或將此再以醇進行烷氧基化而改質,作為下述式(2)表示之改質三聚氰胺來調製。又,前述醇為低級醇,例如以碳數1~4之醇為佳。
式中,R5 ~R10 各自獨立為羥甲基、包含直鏈狀、分支狀或環狀之碳數1~4之烷氧基的烷氧基甲基、或氫原子,但是至少1個為羥甲基或烷氧基甲基。
以式(2)表示之改質三聚氰胺,可列舉三甲氧基甲基單羥甲基三聚氰胺、二甲氧基甲基單羥甲基三聚氰胺、三羥甲基三聚氰胺、六羥甲基三聚氰胺、六甲氧基羥甲基三聚氰胺等。接著,將前述改質三聚氰胺或此所得之多聚體(例如、二聚體、三聚體等之寡聚物)依據常法,使與甲醛加成縮聚直到所期望之分子量為止,可得到藉由福馬林或福馬林-醇改質的三聚氰胺縮合物。又,前述改質三聚氰胺及其縮合體之1種以上的改質三聚氰胺縮合物可作為交聯劑使用。
又,藉由福馬林或福馬林-醇改質之脲縮合物,例如依據習知的方法,將所期望之分子量之脲縮合物以福馬林進行羥甲基化而改質,或將此再以醇進行烷氧基化而改質來調製。前述改質脲縮合物之具體例,可列舉例如甲氧基甲基化脲縮合物、乙氧基甲基化脲縮合物、丙氧基甲基化脲縮合物等。又,可使用此等1種以上的改質脲縮合物。
1分子中具有平均2個以上之羥甲基或烷氧基羥甲基的苯酚化合物,可列舉例如(2-羥基-5-甲基)-1,3-苯二甲醇、2,2’,6,6’-四甲氧基甲基雙酚A等。
此等胺基縮合物或苯酚化合物可1種單獨使用或組合2種以上使用。
又,前述羥甲基三聚氰胺等之胺基化合物或胺基樹脂作為交聯劑使用時,添加作為觸媒的熱酸產生劑為佳。熱酸產生劑,無特別限定,可列舉例如下述式(3)表示之銨鹽。
式中,R11 ~R14 各自獨立表示氫原子、直鏈狀、分支狀或環狀之碳數1~12之烷基、直鏈狀、分支狀或環狀之碳數2~12之烯基、碳數6~20之芳基、或碳數7~12之芳烷基或芳氧基烷基,此等之基之氫原子之一部分可經側氧基取代,此等之基之氫原子之一部分或全部可經烷氧基取代。選自R11 ~R14 之2個可與此等所鍵結之氮原子一同形成環,此時,該環為環中具有式中之氮原子之碳數3~10之脂肪族環,或環中具有式中之氮原子之碳數5~10的雜芳香族環。X- 為α位具有至少1個氟原子的磺酸根離子、全氟烷基醯亞胺離子或全氟烷基甲基(methide)離子。
X- 具體而言,可列舉三氟甲磺酸酯陰離子、九氟丁磺酸酯(nonaflate)陰離子等之全氟烷烴磺酸陰離子、α位具有至少1個氟原子的磺酸鹽陰離子、雙(三氟甲基磺醯基) 醯亞胺陰離子、雙(全氟乙基磺醯基)醯亞胺陰離子、雙(全氟丁基磺醯基)醯亞胺陰離子等之醯亞胺陰離子、三(三氟甲基磺醯基)甲基陰離子、三(全氟乙基磺醯基) 甲基陰離子等之甲基陰離子。
調配熱酸產生劑時,其調配量係相對於樹脂A100質量份,較佳為0.1~15質量份,更佳為0.2~10質量份。在前述範圍時,樹脂組成物A充分地硬化,且樹脂組成物A之保存安定性也良好。
樹脂組成物A可包含溶劑。前述溶劑,可列舉例如環己酮、環戊酮、甲基-2-n-戊基酮等之酮類;3-甲氧基丁醇、3-甲基-3-甲氧基丁醇、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇等之醇類;丙二醇單甲醚、乙二醇單甲醚、丙二醇單乙醚、乙二醇單乙醚、丙二醇二甲醚、二乙二醇二甲醚等之醚類;丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、乳酸乙酯、丙酮酸乙酯、乙酸丁酯、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙酸tert-丁基、丙酸tert-丁基、丙二醇單-tert-丁醚乙酸酯、γ-丁內酯等之酯類等。此等可1種單獨使用或混合2種以上使用。調配前述溶劑時,其調配量係相對於樹脂A100質量份,較佳為100~5,000質量份,更佳為150~2,500質量份。
又,樹脂組成物A也可以作為不包含溶劑之薄膜狀組成物使用。
樹脂組成物A,必要時,可包含界面活性劑或為了進一步提高耐熱性之目的,也可包含抗氧化劑等。
界面活性劑,無特別限定,可列舉例如聚氧乙烯月桂醚、聚氧乙烯硬脂基醚、聚氧乙烯十六醚、聚氧乙烯油基醚等之聚氧化乙烯烷醚類、聚氧乙烯辛基酚醚、聚氧乙烯壬基酚醚等之聚氧乙烯烷基芳醚類、聚氧乙烯聚氧丙烯嵌段共聚物類、山梨糖醇酐單月桂酸酯、山梨糖醇酐單棕櫚酸酯、山梨糖醇酐單硬脂酸酯等之山梨糖醇酐脂肪酸酯類、聚氧乙烯山梨糖醇酐單月桂酸酯、聚氧乙烯山梨糖醇酐單棕櫚酸酯、聚氧乙烯山梨糖醇酐單硬脂酸酯、聚氧乙烯山梨糖醇酐三油酸酯、聚氧乙烯山梨糖醇酐三硬脂酸酯等之聚氧乙烯山梨糖醇酐脂肪酸酯之非離子系界面活性劑、EFTOP(註冊商標)EF301、EF303、EF352((股)TOHKEM PRODUCTS製)、Megafac(註冊商標) F171、F172、F173(DIC(股)製)、Fluorad(註冊商標) FC430、FC431(3M公司製)、AsahiguardAG710、Surflon (註冊商標)S-381、S-382、SC101、SC102、SC103、SC104、SC105、SC106、Surfynol(註冊商標)E1004、KH-10、KH-20、KH-30、KH-40(旭硝子(股))等之氟系界面活性劑、有機矽氧烷聚合物KP341、X-70-092、X-70-093、X-70-1102(信越化學工業(股)製)、丙烯酸系或甲基丙烯酸系polyflow No. 75、No. 95(共榮社化學(股)製)。此等可1種單獨使用或組合2種以上使用。
抗氧化劑較佳為選自受阻酚系化合物、受阻胺系化合物、有機磷化合物及有機硫化合物之至少1種。
前述受阻酚系化合物,無特別限定,較佳為以下所列舉者。可列舉例如1,3,5-三甲基-2,4,6-三(3,5-二-tert-丁基-4-羥基苄基)苯(商品名:IRGANOX 1330)、2,6-二-tert-丁基-4-甲基苯酚(商品名:Sumilizer BHT)、2,5-二-tert-丁基-氫醌(商品名:Nocrac NS-7)、2,6-二-tert-丁基-4-乙基苯酚(商品名:Nocrac M-17)、2,5-二-tert-戊基氫醌(商品名:Nocrac DAH)、2,2’-亞甲基雙(4-甲基-6-tert-丁基苯酚)(商品名:Nocrac NS-6)、3,5-二-tert-丁基-4-羥基-苄基膦酸酯-二乙基酯(商品名:IRGANOX 1222)、4,4’-硫雙(3-甲基-6-tert-丁基苯酚)(商品名:Nocrac 300)、2,2’-亞甲基雙(4-乙基-6-tert-丁基苯酚)(商品名:Nocrac NS-5)、4,4’-亞丁基雙(3-甲基-6-tert-丁基苯酚)(商品名:ADK STABAO-40)、2-tert-丁基-6-(3-tert-丁基-2-羥基-5-甲基苄基)-4-甲基苯基丙烯酸酯(商品名:Sumilizer GM)、2-[1-(2-羥基-3,5-二-tert-戊基苯基)乙基]-4,6-二-tert-戊基苯基丙烯酸酯(商品名:Sumilizer GS)、2,2’-亞甲基雙[4-甲基-6-(α-甲基-環己基)苯酚]、4,4’-亞甲基雙(2,6-二-tert-丁基苯酚)(商品名:Seenox 226M)、4,6-雙(辛基硫代甲基)-o-甲酚(商品名:IRGANOX 1520L)、2,2’-乙烯雙(4,6-二-tert-丁基苯酚)、十八烷基-3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯(商品名:IRGANOX 1076)、1,1,3-三-(2-甲基-4-羥基-5-tert-丁基苯基)丁烷(商品名:ADK STABAO-30)、四[伸甲基-(3,5-二-tert-丁基-4-羥基羥基氫化肉桂酸酯)]甲烷(商品名:ADK STABAO-60)、三乙二醇雙[3-(3-tert-丁基-5-甲基-4-羥基苯基)丙酸酯](商品名:IRGANOX 245)、2,4-雙-(n-辛硫基)-6-(4-羥基-3,5-二-tert-丁基苯胺基)-1,3,5-三嗪(商品名:IRGANOX 565)、N,N’-六亞甲基雙(3,5-二-tert-丁基-4-羥基-氫化肉桂醯胺)(商品名:IRGANOX 1098)、1,6-己二醇-雙[3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯](商品名:IRGANOX 259)、2,2-硫代-二乙烯雙[3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯](商品名:IRGANOX 1035)、3,9-雙[2-[3-(3-tert-丁基-4-羥基-5-甲基苯基)丙醯氧基]1,1-二甲基乙基]2,4,8,10-四氧雜螺[5.5]十一烷(商品名:Sumilizer GA-80)、三-(3,5-二-tert-丁基-4-羥基苄基)異氰脲酸酯(商品名:IRGANOX 3114)、雙(3,5-二-tert-丁基-4-羥基苄基膦酸乙基)鈣/聚乙烯蠟混合物(50:50)(商品名:IRGANOX 1425WL)、異辛基-3-(3,5-二-tert-丁基-4-羥基苯基)丙酸酯(商品名:IRGANOX 1135)、4,4’-硫雙(6-tert-丁基-3-甲基苯酚)(商品名:Sumilizer WX-R)、6-[3-(3-tert-丁基-4-羥基-5-甲基苯基)丙氧基]-2,4,8,10-四-tert-丁基二苯并[d,f][1,3,2]二氧雜磷雜庚英(商品名:Sumilizer GP)等。
前述受阻胺系化合物,無特別限定,較佳為以下所列舉者。可列舉例如p,p’-二辛基二苯基胺(商品名:IRGANOX 5057)、苯基-α-萘基胺(商品名:Nocrac PA)、聚(2,2,4-三甲基-1,2-二氫喹啉(Dihydroquinoline)) (商品名:Nocrac 224、224-S)、6-乙氧基-2,2,4-三甲基-1,2-二氫喹啉(商品名:Nocrac AW)、N,N’-二苯基-p-苯二胺(商品名:Nocrac DP)、N,N’-二-β-萘基-p-苯二胺(商品名:Nocrac White)、N-苯基-N’-異丙基-p-苯二胺(商品名:Nocrac 810NA)、N,N’-二烯丙基-p-苯二胺(商品名:Nonflex TP)、4,4’-(α,α-二甲基苄基)二苯基胺(商品名:Nocrac CD)、p,p-甲苯磺醯基胺基二苯基胺(商品名:Nocrac TD)、N-苯基-N’-(3-甲基丙烯醯氧基-2-羥基丙基)-p-苯二胺(商品名:Nocrac G1)、N-(1-甲基庚基)-N’-苯基-p-苯二胺(商品名:Ozonon 35)、N,N’-二-sec-丁基-p-苯二胺(商品名:Sumilizer BPA)、N-苯基-N’-1,3-二甲基丁基-p-苯二胺(商品名:Antigene 6C)、烷基化二苯基胺(商品名:Sumilizer 9A)、琥珀酸二甲酯-1-(2-羥基乙基)-4-羥基-2,2,6,6-四甲基哌啶聚縮合物(商品名:Tinuvin 622LD)、聚[[6-(1,1,3,3-四甲基丁基)胺基-1,3,5-三嗪-2,4-二基][(2,2,6,6-四甲基-4-哌啶基)亞胺基]伸己基[(2,2,6,6-四甲基-4-哌啶基) 亞胺基]](商品名:CHIMASSORB 944)、N,N’-雙(3-胺基丙基)乙二胺-2,4-雙[N-丁基-N-(1,2,2,6,6-五甲基-4-哌啶基)胺基]-6-氯-1,3,5-三嗪縮合物(商品名:CHIMASSORB 119FL)、雙(1-辛氧基-2,2,6,6-四甲基-4-哌啶基)癸二酸酯(商品名:TINUVIN 123)、雙(2,2,6,6-四甲基-4-哌啶基)癸二酸酯(商品名:TINUVIN 770)、2-(3,5-二-tert-丁基-4-羥基苄基)-2-n-丁基丙二酸雙(1,2,2,6,6-五甲基-4-哌啶基)(商品名:TINUVIN 144)、雙(1,2,2,6,6-五甲基-4-哌啶基)癸二酸酯(商品名:TINUVIN 765)、四(1,2,2,6,6-五甲基-4-哌啶基)1,2,3,4-丁烷四羧酸酯(商品名:LA-57)、四(2,2,6,6-四甲基-4-哌啶基)1,2,3,4-丁烷四羧酸酯(商品名:LA-52)、1,2,3,4-丁烷四羧酸與1,2,2,6,6-五甲基-4-哌啶醇及1-十三醇之混合酯化物(商品名:LA-62)、1,2,3,4-丁烷四羧酸與2,2,6,6-四甲基-4-哌啶醇及1-十三醇之混合酯化物(商品名:LA-67)、1,2,3,4-丁烷四羧酸與1,2,2,6,6-五甲基-4-哌啶醇及3,9-雙(2-羥基-1,1-二甲基乙基)-2,4,8,10-四氧雜螺[5.5]十一烷之混合酯化物(商品名:LA-63P)、1,2,3,4-丁烷四羧酸與2,2,6,6-四甲基-4-哌啶醇及3,9-雙(2-羥基-1,1-二甲基乙基)-2,4,8,10-四氧雜螺[5.5]十一烷之混合酯化物(商品名:LA-68LD)、(2,2,6,6-伸丁基-4-哌啶基)-2-丙烯羧酸酯(商品名:ADK STABLA-82)、(1,2,2,6,6-五甲基-4-哌啶基)-2-丙烯羧酸酯(商品名:ADK STABLA-87)等。
前述有機磷化合物,無特別限定,較佳為以下所列舉者。可列舉例如雙(2,4-二-tert-丁基苯基)[1,1-聯苯基]-4,4’-二基雙亞磷酸酯、9,10-二氫-9-氧雜-10-磷雜菲-10-氧化物(商品名:SANKO-HCA)、三乙基亞磷酸酯(商品名:JP302)、三-n-丁基亞磷酸酯(商品名:JP304)、三苯基亞磷酸酯(商品名:ADK STABTPP)、二苯基單辛基亞磷酸酯(商品名:ADK STABC)、三(p-甲苯基(cresyl))亞磷酸酯(商品名:Chelex-PC)、二苯基單癸基亞磷酸酯(商品名:ADK STAB135A)、二苯基單(十三烷基)亞磷酸酯(商品名:JPM313)、三(2-乙基己基)亞磷酸酯(商品名:JP308)、苯基二癸基亞磷酸酯(商品名:ADK STAB517)、十三烷基亞磷酸酯(商品名:ADK STAB3010)、四苯基二丙二醇二亞磷酸酯(商品名:JPP100)、雙(2,4-二-tert-丁基苯基)季戊四醇二亞磷酸酯(商品名:ADK STABPEP-24G)、三(十三烷基)亞磷酸酯(商品名:JP333E)、雙(壬基苯基)季戊四醇二亞磷酸酯(商品名:ADK STABPEP-4C)、雙(2,6-二-tert-丁基-4-甲基苯基)季戊四醇二亞磷酸酯(商品名:ADK STABPEP-36)、雙[2,4-二(1-苯基異丙基)苯基]季戊四醇二亞磷酸酯(商品名:ADK STABPEP-45)、三月桂基三硫代亞磷酸酯(商品名:JPS312)、三(2,4-二-tert-丁基苯基)亞磷酸酯(商品名:IRGAFOS 168)、三(壬基苯基)亞磷酸酯(商品名:ADK STAB1178)、二硬脂基季戊四醇二亞磷酸酯(商品名:ADK STABPEP-8)、三(單,二壬基苯基)亞磷酸酯(商品名:ADK STAB329K)、三油烯基亞磷酸酯(商品名:Chelex-OL)、三硬脂基亞磷酸酯(商品名:JP318E)、4,4’-亞丁基雙(3-甲基-6-tert-丁基苯基二(十三烷基))亞磷酸酯(商品名:JPH1200)、四(C12 -C15 混合烷基)-4,4’-異亞丙基二苯基二亞磷酸酯(商品名:ADK STAB1500)、四(十三烷基)-4,4’-亞丁基雙(3-甲基-6-tert-丁基苯酚)二亞磷酸酯(商品名:ADK STAB260)、六(十三烷基)-1,1,3-三(2-甲基-5-tert-丁基-4-羥基苯基)丁烷-三亞磷酸酯(商品名:ADK STAB522A)、氫化雙酚A亞磷酸酯聚合物(HBP)、四(2,4-二-tert-丁基苯氧基)4,4’-亞聯苯基-二-膦(商品名:P-EPQ)、四(2,4-二-tert-丁基-5-甲基苯氧基)4,4’-亞聯苯基-二-膦(商品名:GSY-101P)、2-[[2,4,8,10-四(1,1-二甲基乙基)二苯并[d,f][1,3,2]二氧雜磷雜庚英-6-基]氧基]-N,N-雙[2-[[2,4,8,10-四(1,1-二甲基乙基)二苯并[d,f][1,3,2]二氧雜磷雜庚英-6-基]氧基]-乙基]乙胺(商品名:IRGAFOS 12)、2,2’-亞甲基雙(4,6-二-tert-丁基苯基)辛基亞磷酸酯(商品名:ADK STABHP-10)等。
前述有機硫化合物,無特別限定,較佳為以下所列舉者。可列舉例如3,3’-硫代二丙酸二月桂酯(商品名:Sumilizer TPL-R)、3,3’-硫代二丙酸二肉豆蔻酯(商品名:Sumilizer TPM)、3,3’-硫代二丙酸二硬脂酯(商品名:Sumilizer TPS)、季戊四醇四(3-月桂基硫代丙酸酯)(商品名= Sumilizer TP-D)、3,3’-硫代二丙酸二(十三烷基)酯(商品名:Sumilizer TL)、2-巰基苯並咪唑(商品名:Sumilizer MB)、3,3’-硫代二丙酸二(十三烷基)酯(商品名:Adeka Stab AO-503A)、1,3,5-三-β-硬脂基硫代丙醯氧基乙基異氰脲酸酯、3,3’-硫代二丙酸二(十二烷基)酯(商品名:IRGANOX PS 800FL)、3,3’-硫代二丙酸二(十八烷基)酯(商品名:IRGANOX PS 802FL)等。
前述抗氧化劑之中,特佳為四[伸甲基-(3,5-二-tert-丁基-4-羥基羥基氫化肉桂酸酯)]甲烷。前述抗氧化劑之添加量係相對於樹脂A100質量份,較佳為0.5~5質量份,更佳為1~3質量份。在前述範圍時,可得到充分的耐熱效果,也可得到相溶性。又,抗氧化劑可1種單獨使用或組合2種以上使用。
又,樹脂組成物A,為了更提高耐熱性,相對於樹脂A 100質量份,也可添加50質量份以下之公知之二氧化矽等的填料。
樹脂層之厚度係以0.1~50μm為佳,更佳為0.3~30μm。樹脂層之厚度在前述範圍時,遮光性充分,膜之平坦性也良好。
[金屬層]   形成於前述樹脂層上之金屬層所含有之金屬,無特別限定,可列舉例如鈦、鋁、銅、鎢、鉭、鉬、鉻、鈮、金等或此等之合金。此等之中,就泛用性或成膜容易度的觀點,較佳為鈦、鋁、銅、或鈦/鎢之合金。又,前述金屬層可為具有層合二層以上不同之金屬的多層構造者。
前述金屬層之厚度係以0.02~20μm為佳,更佳為0.04~10μm。厚度在前述範圍時,支撐體上之樹脂層與後述之絕緣層充分地分離,且支撐體剝離後,接著,也可容易除去金屬層。
關於絕緣層及再配線層,在以下層合體之製造方法中說明。
[層合體之製造方法]   本發明之層合體之製造方法係包含下述步驟(a)~(f)。 [步驟(a)]   步驟(a)係在支撐體上形成樹脂層的步驟。形成樹脂層用之樹脂組成物A為溶液時,將此藉由旋轉塗佈、輥塗佈等的方法塗佈於支撐體上,依據該溶劑的揮發條件,較佳為以80~200℃,更佳為100~180℃之溫度進行預烘烤,藉由使溶劑揮發,形成樹脂組成物層A’。又,樹脂組成物A為薄膜狀組成物的情形時,藉由層合法在支撐體上形成樹脂組成物層A’。
藉由將形成於支撐體上之樹脂組成物層A’加熱硬化,可作為樹脂層產生機能。加熱硬化可藉由加熱板或烤箱來進行,其溫度通常為100~350℃,較佳為150~300℃。又,硬化時間通常為1~10分鐘,較佳為2~8分鐘。又,硬化反應係於樹脂層上形成金屬層之前實施為佳。
[步驟(b)]   步驟(b)係在前述樹脂層上形成金屬層的步驟。形成方法無特別限定,可使用習知的方法。形成方法,可列舉例如電解或無電鍍法、濺鍍法、蒸鍍法等。又,也可為將銅箔等之金屬薄膜直接層合樹脂上,形成金屬層。
[步驟(c)]   步驟(c)係在前述金屬層上形成再配線層形成用的絕緣層,在該絕緣層形成圖型的步驟。前述絕緣層,無特別限定,可使用半導體領域中公知者,較佳為使用環氧樹脂、聚醯亞胺樹脂、聚矽氧樹脂、改質聚矽氧樹脂、聚苯并噁唑(PBO)等之樹脂材料所形成者。
前述絕緣層之形成方法無特別限定,可使用公知技術來形成。例如調製包含前述樹脂材料之組成物,將此以旋轉塗佈、輥塗佈等之塗佈法塗佈於金屬層上,或將前述組成物形成於薄膜上後,將該薄膜層合於金屬層上等的方法,可形成前述絕緣層。又,塗佈前述組成物後,必要時,可施予50~300℃,較佳為100~250℃之加熱。前述絕緣層之厚度係以0.1~100μm為佳,更佳為0.5~40μm,又更佳為1~35μm。
又,在前述絕緣層形成圖型的方法也無特別限定,可使用以往習知的方法形成。例如可藉由光微影形成圖型,此時,形成前述絕緣層後,藉由進行曝光、顯影,可在前述絕緣層形成圖型。
[步驟(d)]   步驟(d)係於形成有前述圖型之絕緣層上,形成導電層的步驟。導電層例如藉由濺鍍使形成Ti、Cu等之層。此導電層係於後述再配線層之形成所必要的。前述導電層之厚度係以0.01~2μm為佳,更佳為0.02~1μm。
[步驟(e)]   步驟(e)係前述導電層上形成再配線層形成用之抗電鍍劑層,該抗電鍍劑層上形成圖型,於前述抗電鍍劑層之圖型間使前述導電層露出的步驟。前述阻劑層,無特別限定,可使用一般使用者,較佳為i線用正型阻劑。前述阻劑層係以形成0.1~100μm左右之厚度為佳。例如藉由光微影可於前述抗電鍍劑層形成圖型。
[步驟(f)]   步驟(f)係於前述抗電鍍劑層之圖型間露出之導電層上,形成再配線層的步驟。導電層上藉由施予鍍敷,可形成再配線層,鍍敷係將銅等之金屬、銅/金合金、銅/鎳/金合金等之合金進行電鍍為佳。前述再配線層之厚度係以0.5~30μm為佳,更佳為1.0~20μm。
形成多層之絕緣層及再配線層時,可包含除去前述抗電鍍劑層後,再除去露出之導電層的步驟。前述抗電鍍劑層可以半導體領域中之習知的方法除去,但是可藉由使用例如環戊酮或丙二醇單甲醚乙酸酯等之溶劑除去。又,對於露出之導電層之除去,也可使用半導體領域中之習知的方法除去,但是Ti的情形時,可使用緩衝氫氟酸除去,Cu的情形時,可使用磷酸加水除去。
此外,藉由與步驟(c)相同的方法,在再配線層上形成絕緣層,在該絕緣層上藉由與步驟(d)相同的方法形成再配線層,也可形成多層之絕緣層及再配線層。
[半導體裝置之製造方法]   製造前述層合體後,於前述再配線層上形成晶片層。前述晶片層,例如可將使用Sn、Ag、Au、Cu、Ni、Pd、Pt等之金屬或其合金等藉由鍍敷等形成凸塊的基板,以覆晶(Flip )連接於前述再配線層上而形成。
然後,藉由將裝置晶片排列,填充底部填充劑,以模壓材料(molding)封裝,可得到所期望之半導體裝置。模壓材料可使用例如在聚矽氧樹脂、環氧樹脂等之樹脂中加入有二氧化矽、氧化鈦等之無機填料的材料。使用這種模壓材料,必要使加熱硬化可進行封裝。模壓材料層之厚度,無特別限定,通常為10~500μm左右。
又,前述支撐體,例如藉由照射355nm之雷射可容易剝離。又,支撐體剝離後之層合體表面之金屬層藉由公知濕式蝕刻處理除去,可得到所期望之半導體層合體。
[實施例]
以下,顯示調製例、實施例及比較例,更具體說明本發明,但是本發明不限定於此等之實施例。又,重量平均分子量(Mw)及數平均分子量(Mn)係將THF作為溶劑使用之藉由GPC之聚苯乙烯換算測量值。又,下述例使用的酸產生劑AG係如以下所示。
[1]樹脂組成物之調製 [調製例1]   於1,000mL之燒瓶中,加入1,5-二羥基萘80g(0.50莫耳)、6-羥基-2-萘甲醛51.6g(0.30莫耳)及甲基溶纖劑145g,以70℃攪拌,同時添加20質量%對甲苯磺酸甲基溶纖劑溶液20g。將溫度提昇至85℃,攪拌6小時後,冷卻至室溫,使用乙酸乙酯800mL稀釋。移至分液漏斗,以去離子水(deionized water)200mL重複洗淨,除去反應觸媒與金屬雜質。將所得之溶液進行減壓濃縮後,對於殘渣添加乙酸乙酯600mL,以己烷2,400mL使聚合物沈澱。將沈澱之聚合物過濾取得、回收後,減壓乾燥,得到包含下述式表示之重複單位的樹脂A1。樹脂A1之Mw為3,200、分散度(Mw/Mn)為2.44。   使樹脂A1(20質量份)、酸產生劑AG(1質量份)及作為交聯劑之Nikalac Mw390((股)三和化學製)4質量份,溶解於包含FC-4430(3M公司製)0.1質量%之丙二醇單甲醚乙酸酯(PGMEA)100質量份中,以0.1μm之氟樹脂製的過濾器過濾,而得到樹脂組成物A1。
[調製例2]   於1,000mL之燒瓶中,加入1,5-二羥基萘80g(0.50莫耳)、聚甲醛9.0g(0.30莫耳)及甲基溶纖劑145g,以70℃攪拌,同時添加20質量%對甲苯磺酸甲基溶纖劑溶液20g。將溫度提昇至85℃,攪拌6小時後,冷卻至室溫,使用乙酸乙酯800mL稀釋。移至分液漏斗,以去離子水200mL重複洗淨,除去反應觸媒與金屬雜質。將所得之溶液進行減壓濃縮後,在殘渣中加入乙酸乙酯600mL,以己烷2,400mL使聚合物沈澱。將沈澱之聚合物過濾取得、回收後,減壓乾燥,得到包含下述式表示之重複單位的樹脂A2。樹脂A2之Mw為1,500、Mw/Mn為2.20。   使樹脂A2(20質量份)、酸產生劑AG(1質量份)及作為交聯劑之Nikalac Mw390((股)三和化學製)4質量份溶解於包含FC-4430(3M公司製)0.1質量%的PGMEA(100質量份)中,以0.1μm之氟樹脂製之過濾器過濾,得到樹脂組成物A2。
[調製例3]   於1,000mL之燒瓶中,加入1-萘酚72g(0.50莫耳)、6-羥基-2-萘甲醛51.6g(0.30莫耳)及甲基溶纖劑145g,以70℃攪拌,同時加入20質量%對甲苯磺酸甲基溶纖劑溶液20g。將溫度提昇至85℃,攪拌6小時後,冷卻至室溫,以乙酸乙酯800mL稀釋。移至分液漏斗,以去離子水200mL重複洗淨,去除反應觸媒與金屬雜質。將所得之溶液進行減壓濃縮後,對殘渣添加乙酸乙酯600mL,以己烷2,400mL使聚合物沈澱。將沈澱之聚合物過濾取得、回收後,減壓乾燥,得到包含下述式表示之重複單位的樹脂A3。樹脂A3之Mw為2,700、Mw/Mn為2.61。   使樹脂A3(20質量份)、酸產生劑AG(1質量份)及作為交聯劑之Nikalac Mw390((股)三和化學製)4質量份溶解於FC-4430(3M公司製)0.1質量%的PGMEA(100質量份)中,以0.1μm之氟樹脂製之過濾器過濾,得到樹脂組成物A3。
[比較調製例1]   於1,000mL之燒瓶中,加入2-甲基羥基苯32.4g(0.30莫耳)、6-羥基-2-萘甲醛51.6g(0.30莫耳)及甲基溶纖劑145g,以70℃攪拌,同時添加20質量%對甲苯磺酸甲基溶纖劑溶液20g。將溫度提昇至85℃,攪拌6小時後,冷卻至室溫,以乙酸乙酯800mL稀釋。移至分液漏斗,以去離子水200mL重複洗淨,去除反應觸媒與金屬雜質。將所得之溶液進行減壓濃縮後,對殘渣添加乙酸乙酯600mL,以己烷2,400mL使聚合物沈澱。將沈澱之聚合物過濾取得、回收後,減壓乾燥,得到包含下述式表示之重複單位之樹脂A4。樹脂A4之Mw為2,100、Mw/Mn為1.58。   使使樹脂A4(20質量份)、酸產生劑AG(1質量份)及作為交聯劑之Nikalac Mw390((股)三和化學製)4質量份溶解於FC-4430(3M公司製)0.1質量%的PGMEA(100質量份)中,以0.1μm之氟樹脂製之過濾器過濾,得到樹脂組成物A4。
[2]層合體之製作及其評價 [實施例1~7、比較例1~3]   將樹脂組成物A1、A2、A3或A4旋轉塗佈於直徑200mm(厚度:500μm)的玻璃板後,藉由使用加熱板以180℃加熱2分鐘、以250℃加熱5分鐘,以表1所示的膜厚形成與樹脂層對應的材料的膜。   然後,對於此樹脂層成膜的玻璃板進行下述試驗。結果如表1所示。又,依以下順序實施評價。
(1)濺鍍耐性或鍍敷耐性   在樹脂層之上,將金屬層藉由濺鍍或電鍍,以表1所示之厚度成膜。此後,自玻璃板側以目視確認,樹脂層與玻璃板或金屬層之間未產生剝離的情形,評價為良好以「○」表示,發生異常的情形,評價為不良以「×」表示。
(2)藉由再配線層之形成及多層絕緣層之硬化之重複耐熱性   使用日本專利第5417623號公報之實施例2的聚醯亞胺聚矽氧組成物,旋轉塗佈於金屬層上成為膜厚4μm,再以100℃加熱形成絕緣層。在前述絕緣層上,與日本專利第5417623號公報之實施例2相同的方法形成圖型後,使用烤箱以220℃加熱1小時,進行硬化形成一層絕緣層。對絕緣層及其開口部,藉由濺鍍分別以0.05μm及0.20μm之膜厚形成Ti層及Cu層。接著,在Cu層上,藉由旋轉塗佈塗佈日本專利第6003855號公報之實施例1的正型阻劑組成物成為膜厚10μm,形成抗電鍍劑層。前述抗電鍍劑層形成圖型後,對開口部施予Cu電鍍,成為厚度5μm,形成配線。然後,藉由PGMEA洗淨,除去抗電鍍劑層,將露出於表面之Cu層使用磷酸加水,於室溫下進行5分鐘蝕刻,接著,將Ti層使用緩衝氫氟酸在室溫下進行3分鐘蝕刻,再於其上旋轉塗佈前述聚醯亞胺聚矽氧組成物使成為膜厚4μm,與前述相同方法形成絕緣層,藉由圖型使形成有Cu配線之部分開口,再以烤箱於220℃加熱1小時進行硬化,形成絕緣層之第二層。此外,藉由將此層合體使用加熱板,於260℃加熱30分鐘,進行耐熱試驗。   對於此層合體,對於絕緣層第一層硬化、絕緣層第二層硬化,260℃耐熱試驗後之各層,自玻璃板側以目視確認,在樹脂層與玻璃板或金屬層之間未產生剝離的情形,評價為良好以「○」表示,發生異常的情形,評價為不良以「×」表示。
(3)在再配線層上之晶片組裝(assembly)及底部填充劑之填充   將具有SnAg凸塊之晶片實裝於前述層合體之Cu配線部後,在晶片與絕緣層之間填充日本專利第5579764號公報之實施例1的底部填充劑,以120℃加熱硬化0.5小時,再以165℃加熱硬化3小時。硬化後,自玻璃板側以目視確認,由玻璃板至樹脂層之間未產生剝離的情形,評價為良好以「○」表示,發生異常的情形,評價為不良以「×」表示。
(4)在晶片層上之模壓成形(molding)   模壓材料使用日本特開2016-088952號公報之實施例7之由剝離薄膜(1)/樹脂薄膜/剝離薄膜(2)所成之複合薄膜的薄膜狀模壓樹脂。將剝離薄膜(2)剝離後,使用真空層合機((股)Takatori製、製品名:TEAM-100RF),將真空腔內設定為真空度250Pa,於110℃下,將樹脂薄膜一次全部黏貼於前述第二層之絕緣層上。回復至常壓後,前述層合體冷卻至25℃,自前述真空層合機取出,將剩餘的剝離薄膜(1)剝離。所得之層合體使用無氧化烤箱(Inert Oven),以180℃、加熱2小時,進行樹脂之硬化。最後,自玻璃板側以目視確認,在樹脂層與玻璃板或金屬層之間未產生剝離的情形,評價為良好以「○」表示,發生異常的情形,評價為不良以「×」表示。
(5)支撐體剝離性試驗   支持體之剝離性係使用以下的方法評價。首先,將以(4)模壓成形之層合體的成形面,藉由真空吸附並設置於吸附板。然後,自支撐體側全面照射355nm之雷射。支撐體可未破裂而剝離的情況以「○」表示,而產生龜裂等之異常的情形,評價為不良以「×」表示。
(6)洗淨去除性試驗   前述剝離性試驗結束後,使用以下方法評價藉由酸之濕式蝕刻試驗。將剝離支撐體後的層合體,當金屬層為鈦或鈦/鎢合金的情形時,在緩衝氫氟酸中,室溫下浸漬3分鐘,銅的情形時,在磷酸加水中室溫下浸漬1分鐘(鍍敷成膜的情形為5分鐘)、鋁的情形時,在磷酸・硝酸・乙酸混合液中35℃下浸漬1分鐘後,以純水清洗。觀察外觀,以目視確認有無殘存之金屬層。無金屬層之殘存者評價為良好,以「○」表示,有金屬層之殘存者,評價為不良,以「×」表示。
(7)透過性試驗   將樹脂組成物A1、A2、A3或A4,以膜厚0.3μm旋轉塗佈於厚度500μm的玻璃基板後,以250℃進行5分鐘熱硬化,形成樹脂層,使用分光光度計(U-4100型、(股)日立High-Tech Science製)測定其透過率(波長355nm)。透過率為20%以下的情形時,評價為良好以「○」表示,而高於20%的情形時,評價為不良以「×」表示。
如表1所示,可知實施例1~7中,層合體之形成及支撐體之剝離、金屬層之除去容易。而比較例1中,洗淨後,絕緣層上可看見來自樹脂層之殘渣,比較例2及3則是雷射照射後,支撐體未剝離而產生龜裂。

Claims (7)

  1. 一種層合體,其係具備支撐體、形成於該支撐體上之包含藉由光之照射可分解之遮光性樹脂的樹脂層、形成於該樹脂層上之金屬層、形成於該金屬層上之絕緣層及再配線層的層合體,其中前述樹脂層之波長355nm之光的透過率為20%以下。
  2. 如請求項1之層合體,其中前述金屬層為包含選自鈦、鋁、銅、鎢、鉭、鉬、鉻、鈮及金之至少1種的金屬。
  3. 如請求項2之層合體,其中前述金屬層為包含選自鈦、鋁、銅及鈦與鎢之合金之至少1個。
  4. 如請求項1~3中任一項之層合體,其中前述絕緣層為包含選自苯並環丁烯、環氧樹脂、聚醯亞胺樹脂、聚矽氧樹脂及聚苯并噁唑之至少1種的樹脂。
  5. 如請求項1~3中任一項之層合體,其中前述遮光性樹脂為主鏈包含縮合環的樹脂。
  6. 如請求項1~3中任一項之層合體,其中前述樹脂層為由含有包含下述式(1)表示之重複單位之樹脂A之樹脂組成物A的硬化物所成者,(式中,R1 ~R3 各自獨立為氫原子、羥基或碳數1~20之1價有機基,但是R1 ~R3 之至少1個為羥基,R4 為氫原子、或可具有取代基之碳數1~30之1價有機基)。
  7. 如請求項1~6中任一項之層合體之製造方法,其係包含以下的步驟:   (a)支撐體上直接形成樹脂層的步驟、   (b)前述樹脂層上形成金屬層的步驟、   (c)前述金屬層上形成絕緣層,該絕緣層上形成圖型的步驟、   (d)於形成有前述圖型之絕緣層上,形成導電層的步驟、   (e)前述導電層上形成抗電鍍劑層,該抗電鍍劑層上形成圖型,於前述抗電鍍劑層之圖型間使前述導電層露出的步驟及   (f)於前述抗電鍍劑層之圖型間露出之導電層上,形成再配線層的步驟。
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JP6743738B2 (ja) 2020-08-19
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US10373903B2 (en) 2019-08-06
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US20180277472A1 (en) 2018-09-27

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