TW201834157A - 薄膜覆晶封裝 - Google Patents
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- TW201834157A TW201834157A TW106134830A TW106134830A TW201834157A TW 201834157 A TW201834157 A TW 201834157A TW 106134830 A TW106134830 A TW 106134830A TW 106134830 A TW106134830 A TW 106134830A TW 201834157 A TW201834157 A TW 201834157A
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Abstract
一種薄膜覆晶封裝,其包括一基底膜、一圖案化線路層、一防焊層、一晶片及石墨薄片。基底膜包括一第一表面及位於第一表面上的一安裝區域。圖案化線路層設置在第一表面上。防焊層部分地覆蓋圖案化線路層。晶片設置在安裝區域上並且電性連接到圖案化線路層。石墨薄片覆蓋防焊層的至少一部分,其中石墨薄片的外緣實質上與防焊層的外緣對齊。
Description
本發明是有關於一種晶片封裝,且特別是有關於一種薄膜覆晶封裝。
在半導體生產中,積體電路(integrated circuit,IC)的製作可以分成三個不同階段,即,晶片製造階段、積體電路製造階段及IC封裝階段,例如,應用薄膜覆晶(chip-on-film,COF)封裝。
為了增大從COF封裝的晶片中熱量的耗散,在晶片經由凸塊電性連接到薄膜之後通常使用導熱膠將散熱片貼合到基底膜的頂部表面以覆蓋整個晶片或者將散熱片貼合到與晶片相對的基底膜的底部表面。在習知技術中,在將散熱片貼合在薄膜上以用於覆蓋晶片的製程中,很難使得散熱片及晶片緊密地貼合在一起,因此空氣通常存在於晶片與散熱片之間的間隙內。因此,在之後的熱處理期間,被困在晶片與散熱片之間的空氣會膨脹,因而使得散熱片與晶片分離並且降低晶片封裝的可靠性。此外,由於空氣的導熱性實際上較低,所以被困在晶片與散熱片之間的空間中的空氣更會影響從晶片中產生的熱量傳導到散熱片的效率。
本發明提供一種薄膜覆晶封裝,其具有良好的散熱效果。
本發明的一種薄膜晶片封裝包括一基底膜、一圖案化線路層、一防焊層、一晶片以及一石墨薄片。基底膜包括一第一表面以及位於第一表面上的一安裝區域。圖案化線路層設置在第一表面上。防焊層部分地覆蓋圖案化線路層。晶片設置在安裝區域上並且電性連接到圖案化線路層。石墨薄片覆蓋防焊層的至少一部分,其中石墨薄片的一外緣實質上與防焊層的一外緣對齊。
在本發明的一實施例中,上述的石墨薄片更包括暴露晶片的至少一部分的一開口。
在本發明的一實施例中,上述的開口完全地暴露晶片的一上表面以及多個側表面。
在本發明的一實施例中,上述的石墨薄片覆蓋晶片的一上表面的至少一部分並且開口完全地暴露晶片的兩個側表面。
在本發明的一實施例中,上述的開口暴露晶片的多個側表面的至少一部分。
在本發明的一實施例中,上述的開口暴露晶片的兩個短側表面的至少一部分。
在本發明的一實施例中,上述的開口完全地暴露晶片的兩個短側表面。
在本發明的一實施例中,上述的開口暴露晶片的兩個長側表面的至少一部分。
在本發明的一實施例中,上述的開口完全地暴露晶片的兩個長側表面。
在本發明的一實施例中,上述的開口暴露晶片的一上表面的一部分。
在本發明的一實施例中,上述的石墨薄片完全地覆蓋晶片的一上表面。
在本發明的一實施例中,上述的開口完全地暴露晶片的一上表面。
在本發明的一實施例中,上述的石墨薄片的外緣與防焊層的外緣之間的距離等於或小於1 mm。
在本發明的一實施例中,上述的圖案化線路層延伸到安裝區域並且防焊層暴露出延伸到安裝區域的圖案化線路層的一部分。
在本發明的一實施例中,上述的晶片安裝在延伸到安裝區域的圖案化線路層的部分上。
在本發明的一實施例中,上述的石墨薄片的開口暴露出延伸到安裝區域的圖案化線路層的部分。
在本發明的一實施例中,上述的薄膜晶片封裝更包括填充在晶片與基底膜之間的一底部填充膠,並且開口暴露底部填充膠。
在本發明的一實施例中,上述的開口暴露晶片的整個上表面並且於開口與晶片的側表面之間存在一間隙。
在本發明的一實施例中,上述的間隙的寬度等於或大於2毫米(mm)。
在本發明的一實施例中,上述的石墨薄片的一厚度實質上介於17微米(μm)到20微米(μm)的範圍。
在本發明的一實施例中,上述的薄膜晶片封裝更包括設置在石墨薄片的一接合表面上的一黏合層,並且接合表面是透過黏合層貼合到防焊層的表面。
在本發明的一實施例中,上述的薄膜晶片封裝更包括一背面石墨薄片,其設置在與基底膜的第一表面相對的基底膜的一第二表面上。
在本發明的一實施例中,上述的背面石墨薄片沿著基底膜的一法線方向與至少安裝區域重疊。
在本發明的一實施例中,上述的背面石墨薄片的一外緣實質上與防焊層的外緣對齊。
本發明的一種薄膜覆晶封裝的製造方法,其包括下列步驟。提供一石墨捲,其中石墨捲包括多個石墨薄片以及一離型膜(release film),石墨薄片貼附在離型膜上並且各石墨薄片包括一開口;展開石墨捲並且自離型膜拾取石墨捲的一展開部分上的石墨薄片的其中之一;以及將石墨薄片的其中之一放置並且壓合在一基底膜上,其中基底膜包括安裝在其上的一晶片並且石墨薄片的其中之一的開口暴露晶片。
在本發明的一實施例中,上述的石墨薄片的其中之一透過一壓合頭壓合在基底膜上。
在本發明的一實施例中,上述的壓合頭是彈性壓合頭。
在本發明的一實施例中,上述的壓合頭包括一凹槽,當壓合頭將石墨薄片的其中之一壓合到基底膜上時,晶片位於凹槽中。
在本發明的一實施例中,上述的凹槽與晶片的一側表面之間維持一間隙。
在本發明的一實施例中,上述的從凹槽到晶片的一側表面的一最短距離實質上是1毫米(mm)到3毫米(mm)。
在本發明的一實施例中,上述的石墨薄片的其中之一更包括設置在石墨薄片的一接合表面上的一黏合層,並且離型膜覆蓋黏合層。
基於上述,石墨薄片被貼合到本發明實施例的薄膜覆晶封裝上,其中石墨薄片暴露晶片的至少一部分並且石墨薄片的外緣與薄膜覆晶封裝的防焊層的外緣對齊。如此配置,可以使石墨薄片與防焊層/晶片之間的接觸面積最大化,以增進薄膜覆晶封裝的散熱效率。並且,由於石墨薄片並不完全地覆蓋晶片,因而使被困在晶片與石墨薄片之間的空氣及/或濕氣可以輕易地排出,因此在高溫及/或高濕度條件之下石墨薄片不會變形或甚至與晶片分離,以增進薄膜覆晶封裝的可靠性。
此外,多個石墨薄片可以經由離型膜而彼此連接以形成石墨捲。因此,具有較差彈性的石墨薄片可應用於捲對捲製程,使得石墨薄片可應用於薄膜覆晶封裝以用於批量生產。因此,可以改進本發明實施例中的薄膜覆晶封裝的散熱。
為讓本發明的上述特徵及優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1說明根據本發明的實施例的薄膜覆晶封裝的截面圖。圖2說明根據本發明的實施例的薄膜覆晶封裝的俯視圖。應注意圖1是沿著線A-A’的圖2的截面圖。參考圖1及圖2,在本實施例中,薄膜覆晶封裝100包括一基底膜110、一圖案化線路層118、一防焊層119、一晶片120及一石墨薄片130。基底膜110包括第一表面112。安裝區域R1是晶片120安裝且位於第一表面112上的區域。圖案化線路層118設置在基底膜110的第一表面112上。防焊層119部分地覆蓋圖案化線路層118。晶片120設置在安裝區域R1中並且電性連接到圖案化線路層118。
更詳細地說,舉例而言,如本實施例中所示,防焊層119覆蓋圖案化線路層118並且暴露圖案化線路層118的一部分,使得晶片120電性連接到被防焊層119所暴露的圖案化線路層118的部分。在本實施例中,圖案化線路層118延伸到安裝區域R1並且防焊層119暴露出延伸到安裝區域R1的圖案化線路層118的一部分,如圖1中所示。晶片120安裝在延伸到安裝區域R1的圖案化線路層118的部分上。
此外,石墨薄片130覆蓋防焊層119的至少一部分。有利的是,石墨薄片130可以具有軟性質地及良好的熱導性,因而可使散熱的面積增大並且因此增進的散熱效果。優選地但並非限制性地,石墨薄片130的外緣E1/E2可經配置以實質上與防焊層119的外緣對齊。舉例來說,石墨薄片130的外緣E1/E2與防焊層119的外緣之間的距離等於或小於1 mm。
在如本實施例中所示的一些實施方案中,石墨薄片130可以包括多個對位孔H1以用於對齊石墨薄片130的外緣E1/E2與防焊層119的外緣。對位孔H1依據期望的或需要的設計而可為任何形狀。優選地但並非限制性地,孔H1的大小可經配置以小於3 mm,以最大化石墨薄片130的散熱效果。
在本實施例中,在完成封裝過程之後,可以沿著多個切割線而切割封裝結構,以形成多個薄膜覆晶封裝100,其中,切割線可以與防焊層119的外緣E1/E2對齊。透過石墨薄片130的外緣E1/E2與防焊層119的外緣對齊的配置,石墨薄片130與防焊層119/晶片120之間的接觸面積可以得到最大化,因而可增進薄膜覆晶封裝100的散熱。
一般而言,如果散熱層完全地覆蓋晶片,則可能因為被困在晶片與散熱層之間的空氣及/或濕氣的膨脹而使散熱層在高溫及/或高濕度條件之下發生變形或甚至與晶片分離。因此,在如本實施例中所示的一些實施方案中,石墨薄片130更可包括一個或多個開口OP1,其暴露晶片120的至少一部分及延伸到安裝區域R1的圖案化線路層118的部分。透過此配置,被困在晶片120與石墨薄片130之間的空氣及/或濕氣可以透過開口OP1而輕易地排出,以避免不希望的石墨薄片130的變形或分離,因而可增進薄膜覆晶封裝100的可靠性。
在本實施例中,開口OP1可以完全地暴露晶片120的多個側表面及上表面,如圖1及圖2中所示,但是本發明不限於此。此外,薄膜覆晶封裝100更可包括填充在晶片120與基底膜110之間的底部填充膠150。底部填充膠150更可如圖1中所示之填充在透過開口OP1暴露的晶片120的側表面與石墨薄片130的側表面之間。在本實施例中,石墨薄片130的側表面/開口OP1與晶片120的側表面之間存在一個或多個間隙G1/G2。舉例來說,石墨薄片130的側表面/開口OP1與晶片120的短側表面之間可存在一間隙G1,並且石墨薄片130的另一側表面/開口OP1與晶片120的長側表面之間可存在一間隙G2,如圖2中所示。優選地但並非限制性地,間隙G1/G2的寬度可經配置以實質上等於或大於2 mm。此外,應注意間隙G1的寬度可以實質上與間隙G2的寬度相同或不同。
應注意的是,在本實施例中,石墨薄片130暴露晶片120的上表面及多個側表面(例如,四個側表面),這意味著晶片120的上表面及側表面中沒有一個是完全被覆蓋的,但是本發明不限於此。舉例來說,在一些其它實施例中,石墨薄片130部分或完全地覆蓋晶片的上表面,同時完全地暴露晶片120的側表面。此外,在一些其它實施例中,石墨薄片130部分或完全地覆蓋晶片的上表面及兩個短側/長側表面,同時完全地暴露晶片120的兩個長側/短側表面。此外,在一些另外的其它實施例中,石墨薄片130完全地或部分地覆蓋晶片120的上表面及各個側表面,這意味著晶片120的上表面及側表面中沒有一個是完全地暴露的。暴露或覆蓋晶片120的上表面及側表面上的石墨薄片的更多其它不同組合可以依需要實施並且在本發明中不受限制。
在一些實施例中,薄膜覆晶封裝100更包括設置在石墨薄片130的接合表面上的黏合層138,其中接合表面是透過黏合層138貼合到防焊層119的石墨薄片130的表面。圖3說明根據本發明的此類實施例的石墨薄片的截面圖。詳細地說,石墨薄片130可以包括石墨層132、第一黏合層134、第二黏合層138及保護層136,如圖3中所示。此外,圖3中所示的結構可應用於圖1或本發明中的其它實施例,但是不限於此。石墨層132透過第一黏合層134貼合到基底膜110及晶片120。保護層136透過第二黏合層138黏合到石墨層132。優選地但非限制性地,第一黏合層134可以是有機雙面膠,及/或第二黏合層138可以是無機雙面膠,及/或保護層136可以包括絕緣膜,例如,聚醯亞胺(PI)膜,但是實施例僅用於說明且本發明並不限制第一黏合層134、第二黏合層138及保護層136的材料。在一些實施方案中,石墨薄片130的厚度T1可以實質上介於17 μm到20 μm的範圍,但是不限於此。
在圖1的實施例中示例性示出的一些實施方案中,薄膜覆晶封裝100更包括一背面石墨薄片140,其設置在與基底膜110的第一表面112相對的基底膜110的第二表面114上。背面石墨薄片140沿著基底膜110的一法線方向與至少安裝區域R1重疊。背面石墨薄片140更可包括石墨層142、第一黏合層144、第二黏合層148及保護層146,如圖1中所示。石墨層142透過第一黏合層144貼合到基底膜110的第二表面114。保護層146透過第二黏合層148貼合到石墨層142。有利的是,背面石墨薄片140的外緣可以經配置以實質上與防焊層119的外緣對齊,以使背面石墨薄片140與基底膜110之間的接觸面積最大化,並且更促進薄膜覆晶封裝100的散熱。
圖4說明根據本發明的實施例的薄膜覆晶封裝的俯視圖。圖5說明根據本發明的實施例的薄膜覆晶封裝的截面圖。應注意圖4是沿著線B-B’的圖5的截面圖,並且,圖4及圖5中所示的薄膜覆晶封裝與先前圖1到圖3中的薄膜覆晶封裝100相似,因此,本實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,本實施例不再重複贅述。請參照圖1以及圖3,以下將針對本實施例之薄膜覆晶封裝與圖1到圖3中的薄膜覆晶封裝100的差異做說明。
在此必須說明的是,參考圖4及圖5,石墨薄片130覆蓋晶片120的上表面的至少一部分並且開口OP1暴露晶片120的側表面的至少一部分。詳細地說,開口OP1可以暴露晶片120的兩個短側表面的至少一部分。在本實施例中,開口OP1完全地暴露晶片120的兩個短側表面。應注意所謂的“晶片120的短側表面”意味著平行於晶片120的短軸(例如,圖4中的軸A2)的兩個側表面。
詳細地說,晶片120具有沿著晶片120的第一軸A1的晶片長度L1。具有開口OP1的石墨薄片130的一部分具有沿著第一軸A1的長度L2,並且不具有開口OP1的石墨薄片130的另一部分具有沿著第一軸A1的長度L3。因而,長度L3實質上大於長度L2,並且長度L2實質上大於長度L1。因此,開口OP1暴露晶片120的上表面的一部分並且開口OP1如圖4中所示之暴露晶片120的兩個短側表面。
圖6說明根據本發明的實施例的薄膜覆晶封裝的示意圖。應注意的是,圖6中所示的薄膜覆晶封裝與前述實施例中的薄膜覆晶封裝100相似,因此,本實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,本實施例不再重複贅述。請參照圖1以及圖3,以下將針對本實施例之薄膜覆晶封裝與前述實施例中的薄膜覆晶封裝100的差異做說明。
參考圖6,石墨薄片130可以完全地覆蓋晶片120的上表面並且開口OP1暴露晶片120的側表面的至少一部分。詳細地說,開口OP1可以暴露晶片120的兩個長側表面的至少一部分。在本實施例中,開口OP1完全地暴露晶片120的兩個長側表面。應注意所謂的“晶片120的長側表面”意味著平行於晶片120的長軸(例如,圖4中的軸A1)的兩個側表面。
圖7A到圖7C說明根據本發明的實施例的薄膜覆晶封裝的製造過程的一部分。圖8說明根據本發明的實施例將石墨薄片貼合到薄膜覆晶封裝上的治具的正視圖。在本實施例中,薄膜覆晶封裝100可以透過包括以下步驟的製造方法形成。首先,提供如圖7A及圖7B中所示的石墨捲130a。石墨捲130a包括多個石墨薄片130及離型膜131。石墨薄片130貼合在離型膜131上並且各個石墨薄片130包括一開口OP1。詳細地說,各個石墨薄片130可以類似於圖3中所示的石墨薄片130並且更包括設置在石墨薄片130的接合表面上的黏合層(例如,圖3中所示的第二黏合層138)。離型膜131覆蓋石墨薄片130的黏合層。
透過此配置,石墨薄片130可以經由離型膜131而彼此連接以形成石墨薄片帶並且此石墨薄片帶可以卷起以形成石墨捲130a。因此,具有較差彈性的石墨薄片130可應用於捲對捲製程,以便適用於批量生產。隨後,石墨捲130a如圖7B中所示展開,並且可以從離型膜131中拾取石墨捲130a的展開的部分上的石墨薄片130的其中之一。
隨後,參考圖7C及圖8,被拾取的石墨薄片130被放置在基底膜110上並且透過壓合頭700壓合在基底膜110上。在一些實施方案中,具有安裝在其上的晶片120的多個基底膜110也可彼此連接並且捲成基底膜捲。基底膜捲隨後展開且沿著第一方向D1傳輸,並且,具有多個石墨薄片130的石墨捲130a展開且沿著第二方向D2傳輸。第一方向D1及第二方向D2可以彼此相交。因此,透過壓合頭700,石墨薄片130的其中之一被放置在對應的基底膜110上並且壓合在對應的基底膜110上,並且對應的石墨薄片130的開口(例如,圖2中所示的開口OPI)暴露在對應的基底膜110上的晶片120。
在本實施例中,壓合頭700是彈性壓合頭,以避免對薄膜覆晶封裝100的不希望的損壞。詳細地說,壓合頭700可以包括如圖8中所示的凹槽。因此,當壓合頭700將石墨薄片130壓合到基底膜110上時,晶片120位於凹槽中而不會被壓迫且損壞。在凹槽與晶片120的側表面之間可維持一間隙,以進一步防止壓合頭700損壞晶片120,並且從凹槽到晶片120的側表面的最短距離實質上是1 mm到3 mm。
綜上所述,在本發明的實施例中,石墨薄片可以用於散熱。石墨薄片可以具有良好的熱導率且因此增進的散熱效果。此外,石墨薄片的外緣可以與薄膜覆晶封裝的防焊層的外緣對齊以使石墨薄片的覆蓋度最大化並因此使散熱效果最大化。透過此類配置,可以使石墨薄片與防焊層/晶片之間的接觸面積最大化,以增進薄膜覆晶封裝的散熱。此外,石墨薄片可包括用於暴露晶片的至少一部分的開口。如此,被困在晶片與石墨薄片之間的空氣及/或濕氣可以透過開口輕易地排出,因此在高溫及/或高濕度條件之下石墨薄片不會發生變形或甚至與晶片分離,以便增進薄膜覆晶封裝的可靠性。
此外,在製造過程中,多個石墨薄片可以經由離型膜彼此連接以形成石墨捲。因此,具有較差彈性的石墨薄片可應用於捲對捲的製程,使得石墨薄片可應用於薄膜覆晶封裝以用於批量生產。因此,可以增進本發明中的薄膜覆晶封裝的散熱。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神及範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧薄膜覆晶封裝
110‧‧‧基底膜
112‧‧‧第一表面
114‧‧‧第二表面
118‧‧‧圖案化線路層
119‧‧‧防焊層
120‧‧‧晶片
130‧‧‧石墨薄片
130a‧‧‧石墨捲
131‧‧‧離型膜
132‧‧‧石墨層
134‧‧‧第一粘合層
136‧‧‧保護層
138‧‧‧第二粘合層
140‧‧‧背面石墨薄片
142‧‧‧石墨層
144‧‧‧第一粘合層
146‧‧‧保護層
148‧‧‧第二粘合層
150‧‧‧底部填充膠
700‧‧‧壓合頭
E1/E2‧‧‧外緣
G1/G2‧‧‧間隙
OP1‧‧‧開口
R1‧‧‧安裝區域
T1‧‧‧厚度
圖1說明根據本發明的實施例的薄膜覆晶封裝的截面圖。 圖2說明根據本發明的實施例的薄膜覆晶封裝的俯視圖。 圖3說明根據本發明的實施例的石墨薄片的截面圖。 圖4說明根據本發明的實施例的薄膜覆晶封裝的俯視圖。 圖5說明根據本發明的實施例的薄膜覆晶封裝的截面圖。 圖6說明根據本發明的實施例的薄膜覆晶封裝的示意圖。 圖7A到圖7C說明根據本發明的實施例的薄膜覆晶封裝的製造過程的一部分。 圖8說明根據本發明的實施例將石墨薄片貼合到薄膜覆晶封裝上的治具的正視圖。
Claims (31)
- 一種薄膜晶片封裝,包括: 一基底膜,包括一第一表面以及位於該第一表面上的一安裝區域; 一圖案化線路層,設置在該第一表面上; 一防焊層,部分地覆蓋該圖案化線路層; 一晶片,設置在該安裝區域上並且電性連接到該圖案化線路層;以及 一石墨薄片,覆蓋該防焊層的至少一部分,其中該石墨薄片的一外緣實質上與該防焊層的一外緣對齊。
- 如申請專利範圍第1項所述的薄膜晶片封裝,其中該石墨薄片更包括暴露該晶片的至少一部分的一開口。
- 如申請專利範圍第2項所述的薄膜晶片封裝,其中該開口完全地暴露該晶片的一上表面以及多個側表面。
- 如申請專利範圍第2項所述的薄膜晶片封裝,其中該石墨薄片覆蓋該晶片的一上表面的至少一部分並且該開口完全地暴露該晶片的兩個側表面。
- 如申請專利範圍第2項所述的薄膜晶片封裝,其中該開口暴露該晶片的多個側表面的至少一部分。
- 如申請專利範圍第5項所述的薄膜晶片封裝,其中該開口暴露該晶片的兩個短側表面的至少一部分。
- 如申請專利範圍第5項所述的薄膜晶片封裝,其中該開口完全地暴露該晶片的兩個短側表面。
- 如申請專利範圍第5項所述的薄膜晶片封裝,其中該開口暴露該晶片的兩個長側表面的至少一部分。
- 如申請專利範圍第5項所述的薄膜晶片封裝,其中該開口完全地暴露該晶片的兩個長側表面。
- 如申請專利範圍第2項所述的薄膜晶片封裝,其中該開口暴露該晶片的一上表面的一部分。
- 如申請專利範圍第2項所述的薄膜晶片封裝,其中該石墨薄片完全地覆蓋該晶片的一上表面。
- 如申請專利範圍第2項所述的薄膜晶片封裝,其中該開口完全地暴露該晶片的一上表面。
- 如申請專利範圍第1項所述的薄膜晶片封裝,其中該石墨薄片的該外緣與該防焊層的該外緣之間的距離等於或小於1毫米(mm)。
- 如申請專利範圍第1項所述的薄膜晶片封裝,其中該圖案化線路層延伸到該安裝區域並且該防焊層暴露出延伸到該安裝區域的該圖案化線路層的一部分。
- 如申請專利範圍第14項所述的薄膜晶片封裝,其中該晶片設置在延伸到該安裝區域的該圖案化線路層的該部分上。
- 如申請專利範圍第14項所述的薄膜晶片封裝,其中該石墨薄片的該開口暴露出延伸到該安裝區域的該圖案化線路層的該部分。
- 如申請專利範圍第1項所述的薄膜晶片封裝,更包括填充在該晶片與該基底膜之間的一底部填充膠,並且該開口暴露該底部填充膠。
- 如申請專利範圍第1項所述的薄膜晶片封裝,其中該開口暴露該晶片的整個該上表面並且於該開口與該晶片的側表面之間存在一間隙。
- 如申請專利範圍第18項所述的薄膜晶片封裝,其中該間隙的寬度等於或大於2毫米(mm)。
- 如申請專利範圍第1項所述的薄膜晶片封裝,其中該石墨薄片的一厚度實質上介於17微米(μm)到20微米(μm)的範圍。
- 如申請專利範圍第1項所述的薄膜晶片封裝,更包括設置在該石墨薄片的一接合表面上的一黏合層,並且該接合表面是透過該黏合層貼合到該防焊層的表面。
- 如申請專利範圍第1項所述的薄膜晶片封裝,更包括一背面石墨薄片,其設置在與該基底膜的該第一表面相對的該基底膜的一第二表面上。
- 如申請專利範圍第22項所述的薄膜晶片封裝,其中該背面石墨薄片沿著該基底膜的一法線方向與至少該安裝區域重疊。
- 如申請專利範圍第22項所述的薄膜晶片封裝,其中該背面石墨薄片的一外緣實質上與該防焊層的該外緣對齊。
- 一種薄膜覆晶封裝的製造方法,其包括: 提供一石墨捲,其中該石墨捲包括多個石墨薄片以及一離型膜,該石墨薄片貼附在該離型膜上並且各該石墨薄片包括一開口; 展開該石墨捲並且自該離型膜拾取該石墨捲的一展開部分上的石墨薄片的其中之一;以及 將該石墨薄片的該其中之一放置並且壓合在一基底膜上,其中該基底膜包括安裝在其上的一晶片並且該石墨薄片的該其中之一的該開口暴露該晶片。
- 如申請專利範圍第25項所述的薄膜覆晶封裝的製造方法,其中該石墨薄片的該其中之一透過一壓合頭壓合在該基底膜上。
- 如申請專利範圍第26項所述的薄膜覆晶封裝的製造方法,其中該壓合頭是彈性壓合頭。
- 如申請專利範圍第26項所述的薄膜覆晶封裝的製造方法,其中該壓合頭包括一凹槽,當該壓合頭將該石墨薄片的該其中之一壓合到該基底膜上時,該晶片位於該凹槽中。
- 如申請專利範圍第28項所述的薄膜覆晶封裝的製造方法,其中該凹槽與該晶片的一側表面之間維持一間隙。
- 如申請專利範圍第28項所述的薄膜覆晶封裝的製造方法,其中從該凹槽到該晶片的一側表面的一最短距離實質上是1毫米(mm)到3毫米(mm)。
- 如申請專利範圍第25項所述的薄膜覆晶封裝的製造方法,其中該石墨薄片的該其中之一更包括設置在該石墨薄片的一接合表面上的一黏合層,並且該離型膜覆蓋該黏合層。
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2017
- 2017-06-05 US US15/613,275 patent/US10079194B1/en active Active
- 2017-10-11 TW TW106134830A patent/TWI671862B/zh active
- 2017-11-03 CN CN201711069038.4A patent/CN108573930B/zh active Active
- 2017-11-03 CN CN202010250246.XA patent/CN111276446B/zh active Active
- 2017-11-03 CN CN202210329569.7A patent/CN114695275A/zh active Pending
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2018
- 2018-02-23 US US15/903,044 patent/US10236234B2/en active Active
Also Published As
Publication number | Publication date |
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US10079194B1 (en) | 2018-09-18 |
CN111276446B (zh) | 2022-05-24 |
CN114695275A (zh) | 2022-07-01 |
TWI671862B (zh) | 2019-09-11 |
CN108573930B (zh) | 2020-05-01 |
CN111276446A (zh) | 2020-06-12 |
US20180261524A1 (en) | 2018-09-13 |
US20180261523A1 (en) | 2018-09-13 |
CN108573930A (zh) | 2018-09-25 |
US10236234B2 (en) | 2019-03-19 |
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