TW201832336A - Lead frame - Google Patents

Abstract

A lead frame includes a plurality of unit lead frames and a connecting bar. The unit lead frames are arranged in a matrix, and each of the unit lead frames includes a die pad and a plurality of leads. The connecting bar mutually couples the unit lead frames. Also, the unit lead frame has a die pad support part for supporting the die pad to the connecting bar, and the connecting bar has a die pad coupling part coupled to the die pad support part, and a body part which is a region other than the die pad coupling part. The die pad support part and the die pad coupling part are thinner than the thickest region in the unit lead frame and are thicker than the body part.

Description

 Lead frame  

Embodiments of the invention relate to lead frames.

Conventionally, in the lead frame of a MAP (Molded Array Package) type, half etching is performed in advance on the back side of a predetermined area such as a die pad or a lead, a connecting bar, or the like. Processing (refer to, for example, Patent Document 1).

 (previous technical literature)    (Patent Literature)  

Patent Document 1: Japanese Patent Laid-Open No. 2016-143730

However, in the conventional lead frame, in the case where the deep etching is performed by the related half etching process, the connection portion between the crystal pad and the connecting bar is thinned and the strength is weakened, so that the crystal seat may not be formed. Firmly supported at the top of the connecting rod. On the other hand, in the case where the etching is performed by the half etching process, the connecting bar is thickened and the strength is increased. Therefore, the warpage of the entire lead post frame may become large. Further, when a semiconductor device of the MAP type is manufactured, the risk of occurrence of burrs becomes high when cutting along the connecting bar.

The same is true of the above-described conventional problems, and it is an object of the present invention to provide a lead frame capable of firmly supporting a crystal holder to a connecting rod and reducing warpage of the entire lead frame.

A lead frame of one aspect of the embodiment is provided with a plurality of unit lead frames and connecting bars. The plurality of unit lead frames have a crystal holder and a plurality of leads, and are arranged in a matrix. The connecting rods connect the plurality of unit lead frames to each other. Furthermore, each of the plurality of unit lead frames has a holder supporting portion for supporting the holder on the connecting rod, and the connecting rod has a holder connecting portion connected to the holder supporting portion and a connection to the holder The body part of the part other than the part. Further, the holder support portion and the holder connection portion are thinner than the thickest portion of the unit lead frame, and are thicker than the body portion.

According to the state of the present embodiment, it is possible to provide a lead frame capable of firmly supporting the crystal holder to the connecting rod and reducing the warpage of the entire lead frame.

1, 1A, 1B, 1C‧‧‧ lead frame

10‧‧‧ frame

11‧‧‧Unit lead frame

12‧‧‧Connecting bars

12a‧‧‧Crystal joint

12b‧‧‧ Body Department

12c‧‧ ‧ Stress Relief Department

12d, 12e‧‧ ‧ reinforcement

13, 13a to 13e‧‧‧ crystal seat

14‧‧‧ lead

14a‧‧‧ front end

15‧‧‧Crystal support

16‧‧‧Lead extension

20‧‧‧Metal plates

21a, 21b‧‧‧ photoresist layer

22a, 22b‧‧‧ glass mask

A1 to A3‧‧‧Area

D‧‧‧ Straight line

T1 to T8‧‧‧ thickness

Fig. 1A is a view showing an overall view and an enlarged plan view of a lead frame of an embodiment.

Fig. 1B is a cross-sectional view taken along the arrow A-A line shown in Fig. 1A.

Fig. 2 is a schematic cross-sectional view showing a manufacturing step of the lead frame of the embodiment.

Fig. 3A is an enlarged plan view showing a lead frame according to a first modification of the embodiment.

Fig. 3B is a cross-sectional view taken along the arrow B-B line shown in Fig. 3A.

Fig. 4A is an enlarged plan view showing a lead frame according to a second modification of the embodiment.

Fig. 4B is a cross-sectional view taken along the arrow C-C line shown in Fig. 4A.

Fig. 5A is an enlarged plan view showing a lead frame according to a third modification of the embodiment.

Fig. 5B is a cross-sectional view taken along the arrow of the E-E line shown in Fig. 5A.

Hereinafter, embodiments of the lead frame of the present invention will be described with reference to the accompanying drawings. Further, the present invention is not limited by the embodiments shown below.

First, the outline of the lead frame 1 of the embodiment will be described with reference to Fig. 1A. The lead frame 1 shown in Fig. 1 is a MAP type lead frame used for the manufacture of a semiconductor device of a SON (Small Outline Non-leaded package) type.

Further, in the embodiment, a lead frame used for manufacturing a semiconductor device of the SON type is displayed, but other types of semiconductor devices such as a QFN (Quad Flat Non-leaded package) type can be applied. The lead frame used in the manufacture.

The lead frame 1 has a frame 10 in a plan view, and a plurality of unit lead frames 11 are arranged in a matrix in the frame 10. Around the plurality of unit lead frames 11, a plurality of connecting bars 12 supported at both ends by the frame 10 are arranged in a lattice shape.

The unit lead frame 11 has a crystal holder 13, a plurality of leads 14, and a holder support portion 15. The crystal holder 13 has, for example, two crystal holders 13a, 13b, and is disposed at a central portion of the unit lead frame 11. A semiconductor wafer of a non-pattern can be mounted on the surface side of the crystal holder 13.

A plurality of lead wires 14 are arranged between the crystal holder 13 and the connecting bar 12, and the respective front end portions 14a extend from the connecting bar 12 toward the crystal holder 13. The lead wire 14 is electrically connected to the electrode of the semiconductor wafer disposed on the wafer holder 13 by a bonding wire or the like, thereby functioning as an external terminal of the semiconductor device.

The crystal holder support portion 15 connects the crystal holder 13 and the connection rod 12, and supports the crystal holder 13 to the connection rod 12. For example, one or more of the crystal holders 15 are provided in the two crystal holders 13a and 13b1.

Further, the connecting rod 12 has a holder connecting portion 12a connected to the holder supporting portion 15, and a main body portion 12b belonging to a portion other than the holder connecting portion 12a. In other words, the holder coupling portion 12a is a portion that is disposed adjacent to the holder support portion 15 and directly supports the holder support portion 15.

The lead frame 1 of the first embodiment is formed by applying an etching process or the like to a metal plate made of copper, a copper alloy or an iron-nickel alloy. The etching process includes a full etching process in which both surfaces are etched to form one opening, and a half etching process in which the back side is etched to reduce the thickness.

Further, in the enlarged plan view of the present specification, in order to facilitate understanding, a plurality of hatchings are added to the portion to which the half etching process is applied, and the same hatching is applied to the portions having the same thickness and the half etching process.

As shown in Fig. 1A, in the embodiment, all of the connecting bars 12 are half-etched. The peripheral portion of the crystal holder 13 is half-etched, whereas the central portion is not etched to have the same thickness as the metal plate before the etching process.

A half etching process is applied to the peripheral portion of the front end portion 14a of the lead wire 14, and the other portions are not subjected to etching. The crystal holder support portion 15 is all half-etched.

As described above, by etching the predetermined portion of the lead frame 1, the strength of the entire lead frame 1 can be reduced as compared with the case where the half etching process is not performed, so that the warpage of the lead frame 1 can be suppressed. Further, since the unevenness formed by the half etching process can improve the adhesion to the sealing resin, the reliability of the semiconductor device can be improved.

In the embodiment, as shown in Fig. 1B, the thickness T1 of the holder support portion 15 and the thickness T2 of the holder coupling portion 12a of the connection rod 12 are both thicker than the thickness T3 of the body portion 12b of the connection rod 12. . In addition, in FIG. 1B, the boundary line of each part is shown by the broken line.

As a result, the strength of the holder supporting portion 15 and the holder coupling portion 12a supporting the crystal holder 13 can be increased. Therefore, according to the embodiment, the crystal holder 13 can be firmly supported by the connecting rod 12.

Further, the thickness T3 of the main body portion 12b occupying most of the connecting rods 12 can be made much larger than the portion of the lead frame 1 which is the thickest portion (for example, the central portion of the crystal holder 13a) which is not subjected to the half etching process. The thickness T4 is still thin. Thereby, the strength of the entire connecting rod 12 can be suppressed, and therefore, the warpage of the entire lead frame 1 can be reduced.

That is, according to the embodiment, the crystal holder 13 can be firmly supported by the connecting bar 12, and the warpage of the entire lead frame 1 can be reduced.

Further, by suppressing the strength of the entire connecting rod 12, it is possible to reduce the cutting resistance caused by the connecting rod 12 when cutting the connecting rod 12 when manufacturing the MAP type semiconductor device. Therefore, according to the embodiment, the semiconductor device can be stably manufactured.

In the above-described embodiment, when the thickness T4 of the portion not subjected to the half etching process (that is, the thickest portion of the lead frame 1) is set to 100 (%), the crystal holder supporting portion 15 is used. It is preferable that both the thickness T1 and the thickness T2 of the crystal holder connecting portion 12a are 40 (%) to 60 (%), and it is preferable to set the thickness T3 of the main body portion 12b to 30 (%) to 50 (%). . That is, it is better to satisfy the following formula: T4*0.4 T1 T4*0.6; T4*0.4 T2 T4*0.6; T4*0.3 T3 T4*0.5.

Further, when the thickness T1 or the thickness T2 described above is set to be thicker than 40 (%) to 60 (%) of the thickness T4, the strength of the lead frame 1 is increased, so that the lead frame 1 is likely to warp. Further, when the thickness T1 or the thickness T2 described above is set to be thinner than 40 (%) to 60 (%) of the thickness T4, the lead frame 1 may be deformed.

Similarly, when the thickness T3 described above is set to be thicker than 30 (%) to 50 (%) of the thickness T4, the strength of the lead frame 1 is increased, so that the lead frame 1 is likely to warp. Further, when the thickness T3 described above is set to be thinner than 30 (%) to 50 (%) of the thickness T4, the lead frame 1 may be deformed.

Further, in the embodiment, when the thickness T4 of the portion not subjected to the half etching processing is 100 (%), the thickness T1 of the holder support portion 15 and the thickness T2 of the holder coupling portion 12a are set to It is preferably 5 (%) or more thicker than the thickness T3 of the main body portion 12b. Thereby, the firm support of the crystal holder 13 can be achieved at the same time and the warpage of the entire lead frame 1 can be reduced. Find the following formula. T1 T3+T4*0.05; T2 T3+T4*0.05.

Further, when the difference between the thickness T1 or the thickness T2 and the thickness T3 described above is set to less than 5 (%), the strength for preventing the deformation of the lead frame 1 is increased and the strength for preventing the warpage of the lead frame 1 is lowered. The strength and weakness of the swell will disappear, so there will be any one of the deformation or warpage of the lead frame 1.

Further, in the embodiment, it is preferable to set the thickness T1 of the holder support portion 15 to the thickness T2 of the holder coupling portion 12a to be the same thickness. Thereby, in the manufacturing process of the lead frame 1 to be described later, the crystal holder supporting portion 15 and the wafer holder connecting portion 12a can be processed under the same etching conditions. Therefore, since the complication of the etching conditions can be suppressed, the productivity of the lead frame 1 can be improved.

Further, in the embodiment, it is preferable that the thickness T3 of the main body portion 12b and the thickness T5 of the peripheral portion of the crystal seat 13 are set to be the same thickness. Thereby, similarly to the above, since the etching conditions can be suppressed, the productivity of the lead frame 1 can be improved.

Further, as shown in FIG. 1A, the crystal holder 13b is supported on the connecting rod by passing through one lead 14 on the left side and the lead extension 16 extending from the lead 14 toward the base 13b and connected to the base 13b. Article 12.

Therefore, in the connecting rod 12 of the embodiment, it is preferable that the portion to be connected to the lead 14 on which the lead extending portion 16 is formed is also used as the socket connecting portion 12a. Thereby, the crystal holder 13b can be firmly supported by the connecting rod 12.

Further, in the embodiment, as shown in FIG. 1A, the lead frame 1 having a complicated design and different shapes such as the crystal holder 13a and the crystal holder 13b is particularly effective. The reason for this is that since the lead frame 1 of the different shape is compared with the lead frame of the non-differential shape, there is a limitation in the number or arrangement of the holder support portions 15, so that the holder support portion 15 having a firm supporting function can be obtained. .

<Method of Manufacturing Lead Frame>

Next, a method of manufacturing the lead frame 1 according to the embodiment will be described with reference to Fig. 2 . Further, the cross-sectional view shown in Fig. 2 corresponds to a cross-sectional view (i.e., Fig. 1B) viewed from the direction of the A-A line shown in Fig. 1A.

First, the photoresist layers 21a and 21b (Fig. 2(b)) such as a dry film resist are attached to the metal plate 20 of the material belonging to the lead frame 1 shown in Fig. 2(a). Surface and back.

Next, exposure and development are carried out using the glass masks 22a and 22b in which the shape of the lead frame 1 is formed (Fig. 2(c)), and a photoresist mask covered by the photoresist layers 21a and 21b is formed in a predetermined range ( Figure 2 (d)).

As shown in FIG. 2(d), a photoresist mask is formed on the metal plate 20 so that the photoresist layers 21a and 21b are formed on both surfaces of the region A1 to which etching is not performed. Further, in the metal plate 20, a photoresist mask is formed so that the photoresist layer 21a is formed only on the surface of the region A2 to be subjected to the half etching process.

Further, in the embodiment, the photoresist layer 21a is formed on the surface in the region A3 to which the etching operation is applied to the metal plate 20, and the photoresist is formed on the back surface in a predetermined pattern (for example, a dot pattern). In the manner of layer 21b, a photoresist mask is formed.

Next, the metal plate 20 is etched by, for example, a ferric chloride solution or the like (Fig. 2(e)). At this time, as shown in FIG. 2(e), since the photoresist mask is not formed on the back side in the region A2, etching is performed in the depth direction.

On the other hand, since the photoresist layer 21b having a predetermined pattern is formed in the region A3, the etching does not proceed in the depth direction more than the region A2, and on the other hand, the etching also faces the back of the pattern in the photoresist layer 21b. Side.

When the etching to the back side is performed, the entire back side of the pattern of the photoresist layer 21b is etched, and therefore, the photoresist layer 21b provided in the region A3 is peeled off. After the peeling, the etching proceeds equally in the depth direction in the region A2 and the region A3 (Fig. 2(f)).

However, since the etching amount in the depth direction is different in the initial stage of the etching process in the region A2 and the region A3, as shown in FIG. 2(f), the etching amount in the depth direction of the region A2 and the region A3 is Make a difference.

Finally, the cleaning process and the peeling treatment of the photoresist mask are performed to complete the lead frame 1 of the embodiment (Fig. 2(g)). As shown in Fig. 2(g), the region A1 corresponds to the central portion of the crystal holder 13a which is not etched, and the region A2 corresponds to the peripheral portion 12b of the connecting rod 12 and the peripheral portion of the crystal holder 13a, and the region A3 and the crystal The seat support portion 15 and the socket connecting portion 12a of the connecting rod 12 correspond to each other.

In other words, as described above, by forming a predetermined pattern on the photoresist layer 21b on the back side, the amount of etching in the depth direction can be made different. Therefore, the lead frame 1 can form a region having a different depth of the half etching process.

Further, although not shown in the first drawing, it is preferable that the photoresist masks 21a and 21b are not formed on both surfaces of the metal plate 20, and a photoresist mask is preferably formed in a region where the lead frame 1 is to be provided with an opening.

<Modification>

Next, various modifications of the lead frame 1 of the embodiment will be described. Fig. 3A is an enlarged plan view showing the lead frame 1A according to the first modification of the embodiment, and corresponds to the lower diagram of Fig. 1A of the embodiment.

In the lead frame 1A of the modification, the crystal holder supporting portion 15 and the holder connecting portion 12a of the connecting rod 12 are thicker than the main body portion 12b of the connecting rod 12, as in the above-described embodiment. Further, unlike the above embodiment, the connecting rod 12 further has a stress relieving portion 12c.

The stress relieving portion 12c is provided in the connecting rod 12 to reduce the warpage of the lead frame 1 by relieving the stress. For example, as shown in FIG. 3A, the stress relieving portion 12c is provided at the intersection of the connecting bars 12 extending in the longitudinal and lateral directions. .

As shown in FIG. 3B, the stress relaxing portion 12c is formed to have a thickness T6 which is thinner than the thickness T3 of the main body portion 12b of the connecting rod 12. Thereby, the stress of the entire connection bar 12 can be alleviated, and therefore, the warpage of the entire lead frame 1A can be further reduced.

In the first modification, when the thickness T4 of the portion not subjected to the half etching process is 100 (%), the thickness T6 of the stress relieving portion 12c is set to 20 (%) to 40 (%) to satisfy the following formula. Child is better: T4*0.2 T6 T4*0.4.

Further, in the first modification, when the thickness T4 of the portion not subjected to the half etching process is 100 (%), the thickness T6 of the stress relaxing portion 12c is thinner than the thickness T3 of the main portion 12b by 5 (%). The above is better. Thereby, the warpage of the entire lead frame 1A can be further reduced. That is, it is better to satisfy the following formula: T6 T3-T4*0.05.

Further, as shown in Fig. 3B, the three-stage thicknesses T2, T3, and T6 are half-etched from the thickness T4 of the portion which is not etched, and the etching conditions are combined with the portion of the thickness T6 which requires the deepest etching process. Further, the photoresist layer 21b having a pattern of a different shape may be formed at portions of the thicknesses T2 and T3.

As described above, after the photoresist layer 21b having a pattern having a different shape is formed and then etched, it is possible to provide a difference in the time during which the photoresist layer 21b is peeled off from the back surface of the metal plate 20 (refer to FIG. 2(e)). Therefore, different etching depths can be realized in different regions.

Further, in the lead frame 1A of the first modification, the stress relieving portion 12c is provided at the intersection of the connecting rods 12 extending in the longitudinal and lateral directions, but the stress relieving portion 12c may be provided at a portion other than the portion where the rods 12 are connected.

Fig. 4A is an enlarged plan view showing the lead frame 1B according to the second modification of the embodiment. In the lead frame 1B of the second modification, the configuration of the unit lead frame 11 is different from that of the embodiment and the first modification. The crystal holder 13 constituting the unit lead frame 11 of the second modification has three crystal holders 13c, 13d, and 13e which are provided in the central portion of the unit lead frame 11.

Further, one or more of the three crystal holders 13c, 13d, and 13e are provided (in the second modification, two are provided for the crystal holders 13c and 13e, and four are provided for the crystal holder 13d). 13 is a socket support portion 15 that is connected to the connecting rod 12.

In the unit lead frame 11 of the second modification, since the crystal holders 13c, 13e, and 13d are not connected to each other, the lead frame 1B has a portion where the intensity is small on the straight line D displayed by the two-dot chain line. Thereby, there is a possibility that the lead frame 1B is deformed along the straight line D.

In the second modification, among the connecting bars 12, the reinforcing portion 12d is provided in a portion of the lead frame 1B which is arranged on the straight line D and has low strength. As shown in FIG. 4B, the reinforcing portion 12d is formed to have a thickness T7 thicker than the thickness T2 of the holder connecting portion 12a of the connecting rod 12.

As a result, the strength of the portion arranged on the straight line D in the lead frame 1B can be increased. Therefore, according to the second modification, the deformation of the lead frame 1B can be suppressed.

In the second modification, the thickness T7 of the reinforcing portion 12d is set to be the same thickness as the thickness of the portion of the lead frame 1B that is not thickly processed by the half etching (for example, the central portion of the crystal holder 13c). It is better. Thereby, the strength of the portion arranged on the straight line D in the lead frame 1B can be further increased, so that the deformation of the lead frame 1B can be further suppressed.

Further, in the second modification, an example in which the reinforcing portion 12d is provided only in the portion where the intensity is weak on the straight line D in the lead frame 1B is shown, but it may be adjacent to the portion arranged on the straight line D. The reinforcing portion 12d is provided at a portion. Thereby, the strength of the portion arranged on the straight line D in the lead frame 1B can be further increased, so that the deformation of the lead frame 1B can be further suppressed.

Further, in the second modification, an example in which the reinforcing portion 12d is reinforced and arranged in a weak portion in the lateral direction is shown, but the reinforcing portion 12d may be used to reinforce the portion having a weak intensity in the longitudinal direction.

Fig. 5A is an enlarged plan view showing a lead frame 1C according to a third modification of the embodiment. In the lead frame 1C of the third modification, the configuration of the crystal holder 13 is the same as that of the second modification. That is, the crystal holder 13 of the constituent unit lead frame 11 of the third modification has three crystal holders 13c, 13d, and 13e which are provided in the central portion of the unit lead frame 11.

Further, one or more of the three crystal holders 13c, 13d, and 13e are provided (in the third modification, two are provided for the crystal holders 13c and 13e, and four are provided for the crystal holder 13d). 13 is a socket support portion 15 that is connected to the connecting rod 12.

On the other hand, in the third modification, the configuration in which the rod 12 and the holder support portion 15 are connected is different from that of the embodiment, the modification 1 and the modification 2. Specifically, the connecting rod 12 is constituted by the body portion 12b, and the thickness of the wafer supporting portion 15 is the same as that of the body portion 12b. That is, in Modification 3, all of the portions after the half etching process in the lead frame 1C are substantially equal in thickness.

In the unit lead frame 11 of the third modification, since the crystal holders 13c and 13e and the crystal holder 13d are not connected to each other as in the second modification, the lead frame 1C has the intensity arranged on the straight line D shown by the two-dot chain line. Smaller part. Thereby, there is a possibility that the lead frame 1C is deformed along the straight line D.

In the third modification, among the connecting bars 12, the reinforcing portion 12d is provided in a portion of the lead frame 1C which is arranged on the straight line D at a low strength. As shown in Fig. 5B, the reinforcing portion 12d is formed to have a thickness T7 thicker than the thickness T3 of the main body portion 12b of the connecting rod 12.

As a result, the strength of the portion arranged on the straight line D in the lead frame 1C can be increased. Therefore, according to the third modification, the deformation of the lead frame 1C can be suppressed.

Further, in the third modification, it is preferable to provide the reinforcing portion 12d in a portion adjacent to a portion of the lead frame 1C that is arranged on the straight line D. That is, as shown in Fig. 5B, the reinforcing portion 12e adjacent to the reinforcing portion 12d is preferably formed to have a thickness T8 thicker than the thickness T3 of the main body portion 12b of the connecting rod 12.

As a result, the strength of the portion arranged on the straight line D in the lead frame 1C can be further increased. Therefore, deformation of the lead frame 1C can be further suppressed.

In the third modification, the thickness T7 of the reinforcing portion 12d and the thickness T8 of the reinforcing portion 12e are set to be the thickest portions of the lead frame 1C that are not half-etched (for example, the crystal holder 13c). The thickness of the central portion is preferably the same thickness.

Thereby, the strength of the portion arranged on the straight line D in the lead frame 1C can be further increased, so that the deformation of the lead frame 1C can be further suppressed.

Further, in the third modification, an example in which the reinforcing portion 12e is added to the reinforcing portion 12d is shown, but the strength of the portion arranged on the straight line D may be reinforced only by the reinforcing portion 12d. Further, in the third modification, it is shown that the reinforcing portions 12d and 12e reinforce the portion where the intensity of the lateral arrangement is weak. However, the reinforcing portion 12d and the reinforcing portion 12e may be used to reinforce the portion where the longitudinal arrangement is weak.

The embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, in the above-described embodiment, the portion after the half etching process is formed into a two-stage or three-stage thickness, but may be formed in a thickness of four or more stages. As a result, the firm support of the crystal holder 13 can be achieved more satisfactorily and the warpage of the entire lead frame 1 can be reduced.

As described above, the lead frame 1 (1A, 1B) of the embodiment includes a plurality of unit lead frames 11 and connecting bars 12. The unit lead frame 11 has a crystal holder 13 and a plurality of leads 14 arranged in a matrix. The connecting bars 12 connect the lead frames 11 to each other. Furthermore, the unit lead frame 11 has a holder support portion 15 for supporting the crystal holder 13 on the connection rod 12, and the connection rod 12 has a holder connection portion 12a coupled to the holder support portion 15 and a holder connection portion 12a. The body portion 12b of the portion other than the body. As a result, the holder support portion 15 and the holder coupling portion 12a are thinner than the thickest portion of the unit lead frame 11, and are thicker than the main portion 12b. Thereby, the crystal holder 13 can be firmly supported by the connecting rod 12, and the warpage of the entire lead frame (1A, 1B) can be reduced.

In the lead frame 1 (1A, 1B) of the embodiment, when the thickness T4 of the thickest portion of the unit lead frame 11 is 100 (%), the thickness T1 of the holder support portion 15 and the holder coupling portion are The thickness T2 of 12a is set to be more than 5 (%) thicker than the thickness T3 of the main body portion 12b, and the formula (T1) is satisfied. T3+T4*0.05, T2 T3+T4*0.05). Thereby, the strong support of the crystal holder 13 can be satisfactorily achieved at the same time, and the warpage of the entire lead frame 1 (1A, 1B) can be reduced.

Furthermore, in the lead frame 1 (1A, 1B) of the embodiment, at least one of the unit lead frames 11 has a plurality of crystal holders 13 (crystal holders 13a to 13e), whereby the lead frames 1 of different shapes are formed. (1A, 1B) can also firmly support the crystal holder 13.

Further, in the lead frame 1 (1A, 1B) of the embodiment, the crystal holder supporting portion 15 and the wafer connecting portion 12a have the same thickness. Thereby, the productivity of the lead frame 1 (1A, 1B) can be improved.

Further, in the lead frame 1 (1A, 1B) of the embodiment, the connecting bar 12 further has a stress relaxing portion 12c which is thinner than the main portion 12b. Thereby, the warpage of the entire lead frame 1A can be further reduced.

Further, in the lead frame 1A of the embodiment, when the thickness T4 of the thickest portion of the unit lead frame 11 is 100%, the thickness T6 of the stress relaxing portion 12c is 5% or more thinner than the thickness T3 of the main portion 12b. , satisfaction formula (T6 T3-T4*0.05). Thereby, the warpage of the entire lead frame 1A can be further reduced.

Further, in the lead frame 1B of the embodiment, the connecting rod 12 is provided with a reinforcing portion 12d thicker than the holder connecting portion 12a in a portion where the strength is low on the straight line D in the lead frame 1B. Thereby, deformation of the lead frame 1B can be suppressed.

Further, in the lead frame 1B of the embodiment, the reinforcing portion 12d and the thickest portion of the unit lead frame 11 have the same thickness. Thereby, deformation of the lead frame 1B can be further suppressed.

Further effects and modifications can be easily derived by those skilled in the art. Therefore, the broader aspects of the invention are not limited to the specific details and representative embodiments described above. Therefore, various modifications may be made without departing from the spirit and scope of the inventions of the invention.

Claims (8)

 A lead frame comprising: a plurality of unit lead frames having a crystal seat and a plurality of leads arranged in a matrix; and a connecting rod connecting the plurality of unit lead frames to each other; the plurality of unit lead frames Each has a crystal holder supporting portion that supports the crystal holder on the connecting rod, and the connecting rod has a crystal holder connecting portion connected to the crystal holder supporting portion, and a body belonging to a portion other than the crystal holder connecting portion The crystal holder supporting portion and the crystal holder connecting portion are thinner than the thickest portion of the unit lead frame and thicker than the main body portion.   The lead frame according to claim 1, wherein the thickness T1 of the crystal holder supporting portion and the thickness of the crystal holder connecting portion are set when the thickness T4 of the thickest portion of the unit lead frame is 100%. The T2 system is more than 5% thicker than the thickness T3 of the body portion, and satisfies the following formula: T1 T3+T4*0.05; T2 T3+T4*0.05.  The lead frame of claim 1 or 2, wherein at least one of the plurality of unit lead frames has a plurality of the aforementioned crystal holders.    The lead frame according to any one of claims 1 to 3, wherein the crystal holder supporting portion and the crystal holder connecting portion have the same thickness.    The lead frame according to any one of claims 1 to 4, wherein the connecting rod further has a stress relieving portion that is thinner than the body portion.   The lead frame according to claim 5, wherein the thickness T6 of the stress relieving portion is greater than the thickness T3 of the body portion when the thickness T4 of the thickest portion of the unit lead frame is 100%. Thinner than 5%, satisfying the following formula: T6 T3-T4*0.05.  The lead frame according to any one of claims 1 to 6, wherein the connecting rod is further provided with a reinforcing portion in a portion of the lead frame which is arranged on a straight line and has a weaker strength. The aforementioned crystal holder joint portion is also thick.    The lead frame according to claim 7, wherein the reinforcing portion has the same thickness as the thickest portion of the lead frame.