CN108336054A - Lead frame - Google Patents
Lead frame Download PDFInfo
- Publication number
- CN108336054A CN108336054A CN201810027005.1A CN201810027005A CN108336054A CN 108336054 A CN108336054 A CN 108336054A CN 201810027005 A CN201810027005 A CN 201810027005A CN 108336054 A CN108336054 A CN 108336054A
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- China
- Prior art keywords
- lead frame
- chip bonding
- bonding pad
- thickness
- connecting rod
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
A kind of lead frame, including multiple unit lead frames and connecting rod.Unit lead frame is arranged to matrix, and each unit lead frame includes chip bonding pad and multiple leads.Connecting rod interlinks unit lead frame.Also, unit lead frame has the chip bonding pad support portion for chip bonding pad to be supported in connecting rod, and connecting rod has the chip bonding pad linking part for being linked to chip bonding pad support portion and the body part as the region other than chip bonding pad linking part.Chip bonding pad support portion and chip bonding pad linking part are thinner and thicker than body part than the most thick region in unit lead frame.
Description
Technical field
Embodiment of the disclosure is related to a kind of lead frame.
Background technology
Traditionally, in complete resin seal (MAP：Molded Array Package molded array packages) type lead frame
In, it is known that chip bonding pad, lead, connecting rod etc. presumptive area back side carry out half-etching processing technology (for example, with reference to
Patent document 1).
Patent document 1:JP-A-2016-143730
Invention content
However, in traditional lead frame, the depth in being processed for such half-etching etches, chip bonding pad and connecting rod
Between linking part it is thinning to reduce intensity, as a result, worry chip bonding pad cannot be fully supported in connecting rod.It is another
Aspect, the shallow etch in being processed for half-etching, connecting rod thicken to improve intensity, as a result, the warpage of entire lead frame
(warp) may increase.In addition, in the case where manufacturing the semiconductor equipment of MAP types, is cut along connecting rod and generate burr
Risk get higher.
The above one side for completing embodiment is had been based on, and the non-limiting purpose of the embodiment is to provide
A kind of lead frame, which can be fully supported chip bonding pad connecting rod, and can also reduce entire lead frame
Warpage.
A kind of lead frame, including：Multiple unit lead frames and connecting rod.Unit lead frame is arranged to matrix, and each
Unit lead frame includes chip bonding pad and multiple leads.Connecting rod interlinks unit lead frame.Also, unit lead frame
With the chip bonding pad support portion for chip bonding pad to be supported in connecting rod, and connecting rod has and is linked to chip bonding pad branch
The chip bonding pad linking part of support part and body part as the region other than chip bonding pad linking part.Chip bonding pad support portion
It is thinner and thicker than body part than the most thick region in unit lead frame with chip bonding pad linking part.
A kind of lead frame is capable of providing in terms of the embodiment, which can suitably support chip bonding pad in even
Extension bar and the warpage for reducing entire lead frame.
Description of the drawings
In the accompanying drawings：
Figure 1A is the overview and amplification view of lead frame according to the embodiment；
Figure 1B is the sectional view intercepted along line IB-IB shown in figure 1A；
Fig. 2 is schematic sectional view the step of showing to manufacture lead frame according to the embodiment；
Fig. 3 A are the amplification views of the lead frame of the first variation example according to the embodiment；
Fig. 3 B are the sectional views intercepted along line IIIB-IIIB shown in Fig. 3 A；
Fig. 4 A are the amplification views of the lead frame of the second variation example according to the embodiment；
Fig. 4 B are the sectional views intercepted along line IVB-IVB shown in Fig. 4 A；
Fig. 5 A are the amplification views of the lead frame of third variation example according to the embodiment；With
Fig. 5 B are the sectional views along the line VB-VB interceptions in Fig. 5 A.
Reference label corresponding with the element of the embodiment of the present invention and label is listed below.
1、1A、1B、1C：Lead frame
10：Framework
11：Unit lead frame
12：Connecting rod
12a：Chip bonding pad linking part
12b：Body part
12c：Stress easing portion
12d、12e：Strengthening portion
13,13a to 13e：Chip bonding pad
14：Lead
15：Chip bonding pad support portion
16：Lead extension
20：Metallic plate
21a、21b：Resist layer
22a、22b：Glass mask
Specific implementation mode
<The shape and details of lead frame>
The embodiment of lead frame disclosed in the present application hereinafter will be described with reference to the drawings.The present invention is not limited to following
Embodiment.
First, the shape of lead frame 1 according to the embodiment will be described with reference to figure 1A.Lead frame 1 shown in figure 1A is to be used for
Manufacture the MAP of the semiconductor equipment of SON (the small Outline No-lead encapsulation of Small Outline Non-leaded package) type
The lead frame of type.
In addition, implement the lead frame for being illustrated semiconductor equipment for manufacturing SON types, but can be applied to for
Other types are manufactured, for example, the lead frame of the semiconductor equipment of QFN (Quad Flat No Lead package) type.
Lead frame 1 has：Framework 10, the framework 10 have rectangular shape in the plan view；With multiple unit lead frames 11,
Multiple unit lead frame 11 is arranged in matrix condition in such framework 10.Also, the periphery of unit lead frame 11 is arranged
There are multiple latticed connecting rods 12, the both ends of each connecting rod 12 to be respectively supported in framework 10.
Unit lead frame 11 has chip bonding pad 13, multiple leads 14 and chip bonding pad supporting rod 15.For example, chip bonding pad
There are two chip bonding pad 13a, 13b for 13 tools, and are set to the center of unit lead frame 11.The preceding table of such chip bonding pad 13
Surface side can be equipped with semiconductor chip (not shown).
Multiple leads 14 are arranged between chip bonding pad 13 and connecting rod 12, and the end 14a of each lead 14 is from even
Extension bar 12 extends towards chip bonding pad 13.Such lead 14 is electrically connected to half be arranged on chip bonding pad 13 by bonding wire etc.
The electrode of conductor chip, to the external terminal as semiconductor equipment.
Chip bonding pad 13 is attached to connecting rod 12 by chip bonding pad support portion 15, and chip bonding pad 13 is supported to connection
Bar 12.For example, more than one chip bonding pad support portion 15 is formed in each chip weldering among two chip bonding pads 13a, 13b
On disk.
Also, connecting rod 12 have be linked to chip bonding pad support portion 15 chip bonding pad linking part 12a and as in addition to
The body part 12b in the region except chip bonding pad linking part 12a.In other words, chip bonding pad linking part 12a is and chip bonding pad
Support portion 15 is disposed adjacent to and directly supports the region of chip bonding pad support portion 15.
For example, lead frame 1 according to the embodiment is by etching by metallic plate that for example copper, copper alloy or dilval are constituted
And it is formed.Such etching includes：Being fully etched for opening is formed by etching two surfaces, and by etching back-surface side
And the half-etching for keeping metallic plate thinning.
In addition, for easy understanding, the amplification view of this specification will give half-etched regions some hachures, and will
Give the identical hachure of half-etched regions with same thickness.
As shown in Figure 1A, in embodiment, all connecting rods 12 are half-etchings.Although the periphery of chip bonding pad 13
It is half-etching, but the center of chip bonding pad 13 is not half-etching, and with the thickness with the metallic plate before etching
Equal thickness.
The periphery of the end 14a of lead 14 is half-etching, and the part other than periphery is not half-etching.Institute
Chip bonding pad support portion 15 be half-etching.
By the presumptive area of half-etching lead frame 1 in this way, enable to the intensity ratio of entire lead frame 1 without half
The case where etching, is low.This can reduce the warpage of lead frame 1.Also, it is improved by the bumps that half-etching is formed and is set with sealing
The adhesion of fat.This can improve the reliability of semiconductor equipment.
Here, as shown in Figure 1B, embodiment is configured to：So that in the thickness T1 and connecting rod 12 of chip bonding pad support portion 15
Chip bonding pad linking part 12a thickness T3s of the thickness T2 all than the body part 12b in connecting rod 12 it is thick.In addition, Figure 1B is utilized
Dotted line shows the boundary line of each region.
This can improve chip bonding pad linking part 12a and be used to support the strong of the chip bonding pad support portion 15 of chip bonding pad 13
Degree.Therefore, which can be fully supported connecting rod 12 by chip bonding pad 13.
Further, it is possible to so that occupy the thickness T3 of the most body part 12b of connecting rod 12 than the nothing in lead frame 1 half
The most thick region (for example, center of chip bonding pad 13a) of etching is sufficiently thin.This can reduce the intensity of entire connecting rod 12, from
And reduce the warpage of entire lead frame 1.
That is, chip bonding pad 13 can be fully supported in connecting rod 12 and reduce entire lead frame 1 by the embodiment
Warpage.
In addition, the intensity by reducing entire connecting rod 12, in the case where manufacturing the semiconductor equipment of MAP types
Along the cutting of connecting rod 12, the Cutting Drag of connecting rod 12 can be reduced.Therefore, which can steadily manufacture and partly lead
Body equipment.
In the above-described embodiments, it is indicated when by the thickness T4 in the region of no half-etching (that is, most thick region in lead frame 1)
When being 100%, the thickness T2 of the thickness T1 and chip bonding pad linking part 12a of chip bonding pad support portion 15 are preferably thickness T4's
40% to 60%, and the thickness T3 of body part 12b is preferably the 30% to 50% of thickness T4.That is, preferably meeting following
Expression formula：
T4*0.4≤T1≤T4*0.6；
T4*0.4≤T2≤T4*0.6；With
T4*0.3≤T3≤T4*0.5。
When make thickness T1 or T2 than thickness T4 40% to 60 it is thick when, the intensity of lead frame 1 improves, this is intended to make to draw
1 warpage of wire frame.Also, when make thickness T1 or T2 than thickness T4 40% to 60% it is thin when, lead frame 1 may deformation.
Similarly, when make thickness T3 than thickness T4 30% to 50% it is thick when, the intensity of lead frame 1 improves, this trend
In making 1 warpage of lead frame.Also, when make thickness T3 than thickness T4 30% to 50% it is thin when, lead frame 1 may deformation.
In addition, in embodiment, when the thickness T4 in the region of no half-etching is expressed as 100%, being preferably so that core
The thickness T2 of the thickness T1 and chip bonding pad linking part 12a in piece pad support portion 15 it is thicker by 5% than the thickness T3 of body part 12b with
On.This can ensure the compatibility between the abundant support of chip bonding pad 13 and the reduction of the warpage of entire lead frame 1 well.
It can obtain following expression formula：
T1≥T3+T4*0.05；With
T2≥T3+T4*0.05。
In addition, when the difference between thickness T3 and thickness T1 or T2 be less than 5% when, for prevent lead frame 1 deformation it is strong
The intensity reduction that degree improves with the warpage for preventing lead frame 1 is contradictory.This may make the deformation of lead frame 1 or warpage.
In addition, in embodiment, the thickness T1 of chip bonding pad support portion 15 is preferably made to be equal to chip bonding pad linking part 12a
Thickness T2.Chip weldering is processed in the step of manufacture lead frame 1 that can be described below in this way under identical etching condition
Disk support portion 15 and chip bonding pad linking part 12a.This can inhibit the complication of etching condition, to improve the life of lead frame 1
Yield.
In addition, in embodiment, being preferably so that the thickness T3 of body part 12b is equal to the thickness of the periphery of chip bonding pad 13
T5.As above, this can inhibit the complication of etching condition, to improve the productivity of lead frame 1.
Also, as shown in Figure 1A, the left-hand face of chip bonding pad 13b is supported via a lead 14 and lead extension 16
In connecting rod 12, and the lead extension 16 extends from such lead 14 towards chip bonding pad 13b and is incorporated into chip
Pad 13b.
Therefore, in the connecting rod of embodiment 12, the region for being linked to the lead 14 to form leaded extension 16 is also excellent
Selection of land is configured to chip bonding pad linking part 12a.Chip bonding pad 13b can be fully supported in connecting rod 12 by this.
Also, the embodiment is particularly effective in somewhat complex design and lead frame of different shapes 1, for example, will
Chip bonding pad 13 is divided into two chip bonding pads 13a, 13b, as shown in Figure 1A.This is because with without lead of different shapes
Frame is compared, since the arrangement and number to chip bonding pad support portion 15 is restricted, so such have lead of different shapes
Frame 1 requires the chip bonding pad support portion 15 of abundant support function.
<The manufacturing method of lead frame>
Then, the method that lead frame 1 according to the embodiment will be manufactured with reference to the description of figure 2.In addition, section pair shown in Fig. 2
The sectional view (that is, Figure 1B) that Ying Yu is intercepted along line IB-IB shown in figure 1A.
First, it resist layer 21a, 21b will be attached to as shown in Fig. 2 (a) (Fig. 2 (b)) as such as dry film photoresist
Lead frame 1 material metallic plate 20 front and rear surfaces on.
Then, glass mask 22a, the 22b formed with the shape of lead frame 1 is utilized to be exposed and develop (Fig. 2 (c)),
And it is formed in preset range by the resist mask of resist layer 21a, 21b covering.
Here, as shown in Fig. 2 (d), the region A1 that metallic plate 20 is not etched is made to be formed with resist mask, to make two
A surface forms resist layer 21a, 21b.Also, metallic plate 20 is formed with resist mask by the region A2 of deep half-etching, to
Front surface is only set to form resist layer 21a.
In addition, in this embodiment, metallic plate 20 is formed with resist mask by the region A3 of shallow half-etching so that preceding table
Face has been formed uniformly resist layer 21a, and rear surface is formed with resist layer 21b with predetermined pattern (for example, dot pattern).
Then, using such as ferric chloride solution etching metal plate 20 (Fig. 2 (e)).In this case, such as Fig. 2 (e) institutes
Show, in the A2 of region, back-surface side is formed without resist mask, is as a result etched in the depth direction.
On the contrary, in the A3 of region, form the resist layer 21b with predetermined pattern, as a result, although compared with the A2 of region
It is not etched on depth direction, but is etched on rear side of the pattern of resist layer 21b.
Then, when etched to the rear side, the entire rear side of the pattern of etching resist layer 21b.This will be formed in area
Resist layer 21b strippings in the A3 of domain.Then, after such stripping, in region A2 and region A3 in the depth direction
It is etched evenly.
However, in region A2 and region A3, in the first stage of etching so that in the depth direction with etch quantity
Difference.This makes the difference of the etch quantity in region A2 and region A3 in the depth direction as shown in Figure 2 F.
Finally, the cleaning and stripping for carrying out resist mask, to complete lead frame 1 (Fig. 2 (g)) according to the embodiment.This
In, as shown in Fig. 2 (g), region A1 corresponds to the center for the chip bonding pad 13a not etched, and region A2 corresponds to connection
The periphery of the body part 12b and chip bonding pad 13a of bar 12, and region A3 corresponds to chip bonding pad support portion 15 and connecting rod 12
Chip bonding pad linking part 12a.
That is, as described above, by making the resist layer 21b of back-surface side be formed with predetermined pattern, enable in depth side
The difference of upward etch quantity.This can form the region with different half-etching depth in lead frame 1.
In addition, the region that lead frame 1 wants to set up opening is preferably formed with resist mask so that the two of metallic plate 20
A surface is formed without resist layer 21a, 21b (being not shown in fig. 2).
<Variation example>
Then, each variation example of lead frame 1 according to the embodiment will be described.Fig. 3 A are the first modifications according to the embodiment
The amplification view of the lead frame 1A of example, and correspond to the view of the lower view of Figure 1A in embodiment.
As above-described embodiment, in the lead frame 1A according to the first variation example, chip bonding pad support portion 15 and connection
The chip bonding pad linking part 12a of bar 12 is thicker than the body part 12b of connecting rod 12.On the other hand, unlike the embodiments above, connection
Bar 12 also has stress easing portion 12c.
Such stress easing portion 12c, which is formed in, to further decrease lead by mitigating the stress in connecting rod 12
In the region of the warpage of frame 1A, and it is formed in the point of intersection of the connecting rod 12 for example extended in machine and transverse direction, such as Fig. 3 A
It is shown.
As shown in Figure 3B, stress easing portion 12c is formed as thickness T3s of its thickness T6 than the body part 12b of connecting rod 12
It is thin.This can further mitigate the stress of entire connecting rod 12, to further decrease the warpage of entire lead frame 1A.
In the first variation example, when the thickness T4 in the region of no half-etching is expressed as 100%, stress easing portion 12c
Thickness T6 be preferably the 20% to 40% of thickness T4, to meet following expression formula：
T4*0.2≤T6≤T4*0.4。
Also, in the first variation example, when the thickness T4 in the region of no half-etching is expressed as 100%, preferably make
The thickness T6 of stress easing portion 12c is thinner by 5% or more than the thickness T3 of body part 12b.This can further decrease entire lead frame
The warpage of 1A.That is, preferably meeting following expression formula：
T6≤T3-T4*0.05。
In addition, as shown in Figure 3B, in order to proceed to thickness T2, T3, T6 half of three-level from the thickness T4 in the region of no etching
Etching condition, is set as the region of the thickness T6 of the most deep etching of requirement by etching, and simple landform is distinguished in the region of thickness T2, T3
At there is the resist layer 21b with pattern of different shapes.
By forming the resist layer 21b with pattern of different shapes in this way and etching resist layer 21b, energy
It is enough so that there is the time difference from the rear surface of metallic plate 20 stripping resist layer 21b (referring to Fig. 2 (e)).This can realize each area
The different etch depths in domain.
In addition, in the lead frame 1A according to the first variation example, stress easing portion 12c is formed in be prolonged in machine and transverse direction
The point of intersection for the connecting rod 12 stretched, it may form part of in the region other than intersection point of connecting rod 12.
Fig. 4 A are the amplification views of the lead frame 1B of the second variation example according to the embodiment.According to drawing for the second variation example
Wire frame 1B is with embodiment and the first variation example the difference is that the construction of unit lead frame 11.Constitute the list of the second variation example
The tool of chip bonding pad 13 of position lead frame 11 there are three chip bonding pad 13c, 13d, 13e, and such three chip bonding pad 13c,
13d, 13e are formed in the center of unit lead frame 11.
Also, the more than one chip bonding pad support portion 15 for chip bonding pad 13 to be attached to connecting rod 12 is formed in
(in the second variation example, chip bonding pad 13c, 13e are upper each on each chip bonding pad in three chip bonding pads 13c, 13d, 13e
Two are formed, and forms four on chip bonding pad 13d).
Here, in the unit lead frame 11 of the second variation example, chip bonding pad 13c, 13e are not linked to chip bonding pad 13d,
As a result, lead frame 1B has the hypo-intense region being arranged on the straight line D shown in double dot dash line.This may make the edges lead frame 1B
Such straight line D deformations.
Here, in the second variation example, the hypo-intense region being arranged in connecting rod 12 on straight line D in lead frame 1B
It is provided with strengthening portion 12d.Also, such strengthening portion 12d is formed as its thickness T7 than the chip bonding pad connection in connecting rod 12
The thickness T2 of portion 12a is thick, as shown in Figure 4 B.
This can improve the intensity in the region being arranged on straight line D in lead frame 1B.Therefore, the second variation example can prevent
Only lead frame 1B is deformed.
Also, in the second variation example, the thickness T7 of strengthening portion 12d is preferably made to be equal to not lost partly in lead frame 1B
The thickness in the most thick region (for example, center of chip bonding pad 13c) carved.This can more improve being arranged in directly in lead frame 1B
The intensity in the region on line D, to further prevent lead frame 1B to deform.
Reinforce in addition, the second modification exemplifies that only the hypo-intense region being arranged on straight line D in lead frame 1B is arranged
The example of portion 12d, but the region adjacent with the region being arranged on such straight line D can also be provided with strengthening portion 12d.This
The intensity that the region being arranged on straight line D in lead frame 1B can more be improved, to further prevent lead frame 1B to deform.
Also, the second modification is illustrated the example for reinforcing the hypo-intense region of arrangement in the horizontal using strengthening portion 12d,
But it is available with strengthening portion 12d reinforcements and is arranged in longitudinal hypo-intense region.
Fig. 5 A are the amplification views of the lead frame 1C of third variation example according to the embodiment.According to drawing for third variation example
Wire frame 1C is identical as the lead frame of the second variation example in terms of the construction of chip bonding pad 13.That is, constituting the unit of third variation example
The tool of chip bonding pad 13 of lead frame 11 there are three chip bonding pad 13c, 13d, 13e, and such three chip bonding pad 13c,
13d, 13e are formed in the center of unit lead frame 11.
Also, the more than one chip bonding pad support portion 15 for chip bonding pad 13 to be attached to connecting rod 12 is formed in
(in third variation example, chip bonding pad 13c, 13e are upper each on each chip bonding pad in three chip bonding pads 13c, 13d, 13e
Two are formed, and forms four on chip bonding pad 13d).
On the other hand, third variation example with embodiment, the first variation example and the second variation example the difference is that connecting
The construction of bar 12 and chip bonding pad support portion 15.Specifically, connecting rod 12 is made of body part 12b, also, chip bonding pad supports
Portion 15 is equal with the thickness of body part 12b.That is, in third variation example, the thickness of all half-etched regions in lead frame 1C
It spends roughly equal.
Here, as the second variation example, in the unit lead frame 11 of third variation example, chip bonding pad 13c, 13e are not
It is attached to chip bonding pad 13d, as a result, lead frame 1C has the hypo-intense region being arranged on the straight line D shown in double dot dash line.
This may be such that lead frame 1C is deformed along such straight line D.
Therefore, in third variation example, the hypo-intense region in the straight line D being arranged in connecting rod 12 in lead frame 1C
It is provided with strengthening portion 12d.Also, it is thicker than the body part 12b in connecting rod 12 that such strengthening portion 12d is formed as its thickness T7
It is thick to spend T3, as shown in Figure 5 B.
This can improve the intensity in the region being arranged on straight line D in lead frame 1C.Therefore, third variation example can prevent
Only lead frame 1C is deformed.
Also, in third variation example, the region adjacent with the region being arranged on straight line D is preferably provided with strengthening portion
12e.That is, each strengthening portion 12e adjacent with strengthening portion 12d is preferably formed to its thickness T8 than the body part in connecting rod 12
The thickness T3 of 12b is thick, as shown in Figure 5 B.
This can more improve the intensity in the region being arranged on straight line D in lead frame 1C, to further prevent drawing
Wire frame 1C deformations.
In addition, in third variation example, preferably it is equal to the thickness T8 of the thickness T7 and strengthening portion 12e of strengthening portion 12d
In lead frame 1C not by the thickness in the most thick region (for example, center of chip bonding pad 13c) of half-etching.
This can more improve the intensity in the region being arranged on straight line D in lead frame 1C, to further prevent drawing
Wire frame 1C deformations.
In addition, third modification exemplifies the example that strengthening portion 12e is increased to strengthening portion 12d, but can be merely with adding
Strong portion 12d improves the intensity for being arranged in the region on straight line D.Also, third modification is illustrated to be added using strengthening portion 12d, 12e
The example of the hypo-intense region of strong arrangement in the horizontal, but be available with the reinforcement of strengthening portion 12d, 12e be arranged in it is longitudinal
Hypo-intense region.
The embodiment of the present invention is described above, but the present invention is not limited to the above embodiments, and can be not
Away from the present invention purport in the case of make various modifications.For example, in the above-described embodiments, half-etched regions are formed as two-stage
Or the thickness of three-level, it may form part of for thickness more than level Four.This can better assure that the abundant branch of chip bonding pad 13
Compatibility between the reduction of the warpage of support and entire lead frame 1.
As described above, lead frame 1 (1A, 1B) according to the embodiment includes multiple unit lead frames 11 and connecting rod 12.It is single
Position lead frame 11 is arranged to matrix, and each unit lead frame 11 has chip bonding pad 13 and multiple leads 14.Connecting rod 12
Unit lead frame 11 is interlinked.Also, unit lead frame 11 has for chip bonding pad 13 to be supported in connecting rod 12
Chip bonding pad support portion 15, and connecting rod 12 have be linked to chip bonding pad support portion 15 chip bonding pad linking part 12a and
Body part 12b as the region other than chip bonding pad linking part 12a.Also, chip bonding pad support portion 15 and chip weldering
Disk linking part 12a is thinner and thicker than body part 12b than the most thick region in unit lead frame 11.This can be abundant by chip bonding pad 13
Ground is supported in connecting rod 12 and reduces the warpage of entire lead frame 1 (1A, 1B).
Also, in lead frame 1 (1A, 1B) according to the embodiment, when by the thickness in the most thick region in unit lead frame 11
When degree T4 is expressed as 100%, the thickness T2 of the thickness T1 and chip bonding pad linking part 12a of chip bonding pad support portion 15 compare body part
5% or more the thickness T3 thickness of 12b, to meet following expression formula：T1≥T3+T4*0.05；With T2 >=T3+T4*0.05.This energy
Compatibility between the reduction of the warpage of enough abundant supports for ensuring chip bonding pad 13 well and entire lead frame 1 (1A, 1B).
Also, in lead frame 1 (1A, 1B) according to the embodiment, at least one unit lead frame 11 has multiple chips
Pad 13 (chip bonding pad 13a to 13e).Chip bonding pad 13 can be sufficiently supported at lead frame 1 of different shapes by this
In (1A, 1B).
Also, in lead frame 1 (1A, 1B) according to the embodiment, the thickness of chip bonding pad support portion 15 is welded equal to chip
The thickness of disk linking part 12a.This can improve the productivity of lead frame 1 (1A, 1B).
Also, in lead frame 1A according to the embodiment, connecting rod 12 also has the stress easing portion thinner than body part 12b
12c.This can further decrease the warpage of entire lead frame 1A.
Also, in lead frame 1A according to the embodiment, when by the thickness T4 tables in the most thick region in unit lead frame 11
When being shown as 100%, the thickness T6 of stress easing portion 12c is thinner by 5% or more than the thickness T3 of body part 12b, to meet following table
Up to formula：T6≤T3-T4*0.05.This can further decrease the warpage of entire lead frame 1A.
Also, in lead frame 1B according to the embodiment, connecting rod 12 also has than being arranged in straight line D in lead frame 1B
On hypo-intense region in chip bonding pad linking part 12a thickness strengthening portion 12d.This can prevent lead frame 1B from deforming.
Also, in lead frame 1B according to the embodiment, the thickness of strengthening portion 12d is equal to most thick in unit lead frame 11
The thickness in region.This can further prevent lead frame 1B to deform.
Those skilled in the art can be readily derived further effect and variation example.As a result, the present invention's is more extensive
The aspect specific details and exemplary embodiment that are not limited to the described above.Therefore, it is possible to be wanted without departing substantially from by additional right
Various modifications are made in the case of the spirit and scope of the equivalent restriction for claim of summing entirely invented.
Claims (8)
1. a kind of lead frame, including：
Multiple unit lead frames, multiple unit lead frame are arranged to matrix, and each unit lead frame all has chip weldering
Disk and multiple leads；With
Connecting rod, the connecting rod is for interlinking the multiple unit lead frame, wherein
Each unit lead frame in the multiple unit lead frame all has for the chip bonding pad to be supported in the company
The chip bonding pad support portion of extension bar,
There is the connecting rod chip bonding pad linking part and body part, the chip bonding pad linking part to be linked to the chip bonding pad
Support portion, the body part are the regions other than the chip bonding pad linking part, and
Most thick region in unit lead frame described in the chip bonding pad support portion and the chip bonding pad linking part ratio is thin and compares
The body part is thick.
2. lead frame according to claim 1, wherein when by the thickness T4 tables in the most thick region in the unit lead frame
When being shown as 100%, ontology described in the thickness T2 ratios of the thickness T1 of the chip bonding pad support portion and the chip bonding pad linking part
5% or more the thickness T3 thickness in portion, to meet following expression formula：
T1≥T3+T4*0.05；With
T2≥T3+T4*0.05。
3. lead frame according to claim 1 or 2, wherein at least one of the multiple unit lead frame unit is drawn
Wire frame includes multiple chip bonding pads.
4. lead frame according to claim 1 or 2, wherein the thickness of the chip bonding pad support portion is equal to the chip
The thickness of pad linking part.
5. lead frame according to claim 1 or 2, wherein the connecting rod further includes the stress thinner than the body part
Easing portion.
6. lead frame according to claim 5, wherein when by the thickness T4 tables in the most thick region in the unit lead frame
When being shown as 100%, the thickness T6 of the stress easing portion is thinner by 5% or more than the thickness T3 of the body part, following to meet
Expression formula：
T6≤T3-T4*0.05。
7. lead frame according to claim 1 or 2, wherein the connecting rod being arranged with straight line in the lead frame
Hypo-intense region in further include the strengthening portion thicker than chip bonding pad linking part.
8. lead frame according to claim 7, wherein the thickness of the strengthening portion is equal in the unit lead frame most
The thickness in thick region.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2017003087 | 2017-01-12 | ||
| JP2017-003087 | 2017-01-12 | ||
| JP2017216393A JP6856497B2 (en) | 2017-01-12 | 2017-11-09 | Lead frame |
| JP2017-216393 | 2017-11-09 |
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| Publication Number | Publication Date |
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| CN108336054A true CN108336054A (en) | 2018-07-27 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810027005.1A Active CN108336054B (en) | 2017-01-12 | 2018-01-11 | Lead frame |
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| JP (1) | JP6856497B2 (en) |
| CN (1) | CN108336054B (en) |
| TW (1) | TWI706529B (en) |
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| WO2021205891A1 (en) * | 2020-04-07 | 2021-10-14 | 株式会社村田製作所 | Lead frame production method, lead frame, and power source device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020079561A1 (en) * | 2000-12-21 | 2002-06-27 | Shoshi Yasunaga | Lead frame for a semiconductor device, a semiconductor device made from the lead frame, and a method of making a semiconductor device |
| JP2008182175A (en) * | 2006-12-27 | 2008-08-07 | Denso Corp | Method for manufacturing molded package |
| US7808084B1 (en) * | 2008-05-06 | 2010-10-05 | Amkor Technology, Inc. | Semiconductor package with half-etched locking features |
| JP2012114354A (en) * | 2010-11-26 | 2012-06-14 | Dainippon Printing Co Ltd | Lead frame and method of manufacturing the same |
| KR20120100401A (en) * | 2011-03-04 | 2012-09-12 | 앰코 테크놀로지 코리아 주식회사 | Lead frame for fabricating semiconductor package and method for fabricating semiconductor package using the same |
| CN103515248A (en) * | 2012-06-29 | 2014-01-15 | 英特赛尔美国有限公司 | Solder flow impeding feature on a lead frame |
| CN103928419A (en) * | 2013-01-10 | 2014-07-16 | 株式会社三井高科技 | Lead frame |
| CN105845657A (en) * | 2015-01-30 | 2016-08-10 | 友立材料株式会社 | Lead frame and manufacturing method thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3547704B2 (en) * | 2000-06-22 | 2004-07-28 | 株式会社三井ハイテック | Lead frame and semiconductor device |
| JP4094611B2 (en) * | 2005-01-27 | 2008-06-04 | 株式会社三井ハイテック | Manufacturing method of laminated lead frame |
| JP4901776B2 (en) * | 2008-02-04 | 2012-03-21 | パナソニック株式会社 | Lead frame, semiconductor device using the same, and production method thereof |
| JP5807800B2 (en) * | 2010-11-18 | 2015-11-10 | 大日本印刷株式会社 | Leadframe and leadframe manufacturing method |
| JP2013069720A (en) * | 2011-09-20 | 2013-04-18 | Toshiba Corp | Semiconductor device and method of manufacturing the same |
| JP5884506B2 (en) * | 2012-01-23 | 2016-03-15 | 大日本印刷株式会社 | Lead frame for manufacturing semiconductor device and method for manufacturing semiconductor device |
| JP6143468B2 (en) * | 2013-01-11 | 2017-06-07 | 株式会社三井ハイテック | Lead frame |
| JP6610087B2 (en) * | 2014-10-09 | 2019-11-27 | 大日本印刷株式会社 | Lead frame and manufacturing method thereof |
| JP6390011B2 (en) * | 2014-12-25 | 2018-09-19 | 大口マテリアル株式会社 | Lead frame and manufacturing method thereof |
| JP6107995B2 (en) * | 2016-03-10 | 2017-04-05 | 大日本印刷株式会社 | Leadframe and leadframe manufacturing method |
-
2017
- 2017-11-09 JP JP2017216393A patent/JP6856497B2/en active Active
-
2018
- 2018-01-11 CN CN201810027005.1A patent/CN108336054B/en active Active
- 2018-01-12 TW TW107101266A patent/TWI706529B/en active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020079561A1 (en) * | 2000-12-21 | 2002-06-27 | Shoshi Yasunaga | Lead frame for a semiconductor device, a semiconductor device made from the lead frame, and a method of making a semiconductor device |
| JP2008182175A (en) * | 2006-12-27 | 2008-08-07 | Denso Corp | Method for manufacturing molded package |
| US7808084B1 (en) * | 2008-05-06 | 2010-10-05 | Amkor Technology, Inc. | Semiconductor package with half-etched locking features |
| JP2012114354A (en) * | 2010-11-26 | 2012-06-14 | Dainippon Printing Co Ltd | Lead frame and method of manufacturing the same |
| KR20120100401A (en) * | 2011-03-04 | 2012-09-12 | 앰코 테크놀로지 코리아 주식회사 | Lead frame for fabricating semiconductor package and method for fabricating semiconductor package using the same |
| CN103515248A (en) * | 2012-06-29 | 2014-01-15 | 英特赛尔美国有限公司 | Solder flow impeding feature on a lead frame |
| CN103928419A (en) * | 2013-01-10 | 2014-07-16 | 株式会社三井高科技 | Lead frame |
| CN105845657A (en) * | 2015-01-30 | 2016-08-10 | 友立材料株式会社 | Lead frame and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6856497B2 (en) | 2021-04-07 |
| CN108336054B (en) | 2021-11-26 |
| TW201832336A (en) | 2018-09-01 |
| TWI706529B (en) | 2020-10-01 |
| JP2018113433A (en) | 2018-07-19 |
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