TW201817913A - 用於磊晶腔室的上圓錐 - Google Patents
用於磊晶腔室的上圓錐 Download PDFInfo
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- 238000000407 epitaxy Methods 0.000 title claims abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 30
- 239000007789 gas Substances 0.000 description 26
- 238000001816 cooling Methods 0.000 description 12
- 239000012495 reaction gas Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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Abstract
本文中描述了一種磊晶沉積腔室,如高生長速率磊晶腔室,所述磊晶沉積腔室在腔室中圓頂上方具有上部錐體,用於控制空氣流。所述上部錐體在所述腔室中具有由兩個或更多個間隙分離的第一部件和第二部件,每個部件具有部分圓柱形區域和從所述部分圓柱形區域延伸的部分圓錐形區域,所述部分圓柱形區域具有第一凹形內表面、第一凸形外表面、以及所述第一凹形內表面的固定曲率半徑,所述部分圓錐形區域具有第二凹形內表面、第二凸形外表面、以及所述第二凹形內表面的變化曲率半徑,其中所述第二凹形內表面從所述部分圓柱形區域延伸至小於所述固定曲率半徑的第二曲率半徑。
Description
本揭示案大體涉及一種用於半導體處理的設備。更特定而言,本揭示案涉及用於在磊晶腔室中控制空氣流的設備。
磊晶是普遍用於半導體處理以製造用於半導體元件的具有均勻電氣性質的高品質材料的製程。在典型磊晶腔室中,製程氣體在平行於基板的方向中跨基板流動以在基板上形成膜。製程氣體通常從腔室的一側流至另一側,在所述另一側移除廢氣。
在圖1(現有技術)中示出用於控制空氣流以控制在磊晶腔室的上部圓頂上的沉積的錐體30的先前實施方式,以與下面的圖2進行比較。圖1所示的錐體30具有圓柱形部分和漸縮的(tapered)下部部分31。下部部分漸縮以便控制空氣流並且產生更均勻的基板溫度。單個狹縫32從錐體30的頂部延伸至錐體30的底部。當放置在磊晶腔室中時,錐體30被定位在上部圓頂上方並且錐體30的單個狹縫32放置在高溫計下方以允許紅外波穿過錐體30的單個狹縫32。
圖1中的箭頭說明當空氣進入錐體30的頂部時通過錐體30的空氣流。空氣通過錐體30向下行進並離開前往錐體30的底部,同時引入錐體30中的一些空氣通過單個狹縫32離開而至錐體30的側部。
當使用錐體30時形成在上部圓頂上的沉積物在處理期間影響腔室的效能。例如,在上部圓頂上的任何塗層會在處理期間阻擋光輻照到達基板的一部分,從而損傷在基板上形成的膜的均勻性。在上部圓頂上的塗層還會導致跨基板表面的滑移位錯。若在處理期間上部圓頂具有不均勻的溫度,則塗層可在上部圓頂上形成。塗層經常在腔室的排氣側、在上部圓頂上的極高溫度和極低溫度的區域中形成。
因此,需要減少或減弱在高生長速率磊晶腔室中處理期間形成在基板上方的上部圓頂上的塗層的技術。
用於諸如高生長速率磊晶處理腔室100的磊晶腔室中的多狹縫上部錐體70在圖2中示出並且在本文中描述。在一個實施方式中,多狹縫上部錐體70具有主體部件46,所述主體部件具有部分圓柱形區域和部分圓錐形區域58,所述部分圓柱形區域具有第一凹形內表面51和第一凸形外表面52,所述第一凹形內表面具有長度為L1的邊緣49,所述部分圓錐形區域漸縮至具有小於長度L1的長度L2的邊緣53。
在由圖3的截面所示的另一實施方式中,多狹縫上部錐體70包括環形板材177,所述環形板材支撐多狹縫上部錐體70的第一主體部件45和第二主體部件46,同時維持可具有相等寬度W的兩個狹縫71(參看圖2;在圖3的截面圖中僅示出了一個狹縫)。
在又一實施方式中,具有通過多狹縫上部錐體70的改良的空氣流的磊晶生長處理腔室100包括基座103,所述基座在多狹縫上部錐體70下方居中,並且被定位在製程氣體的進氣埠154與出氣埠157之間。上部圓頂121將位於上部圓頂121下方的任何製程氣體與迴圈通過上部圓頂121上方的多狹縫上部錐體70的空氣分隔。
圖2示出了根據一個實施方式的本揭示案的多狹縫上部錐體70。多狹縫上部錐體70與圖1的錐體30形狀相似,然而多狹縫上部錐體70具有多於一個狹縫71,因此多狹縫上部錐體70至少包括第一主體部件45和第二主體部件46。根據一個實施方式,根據將如何在如圖3所示的磊晶處理腔室100內定位主體部件而在圖2中定位主體部件45和46。然而,本揭示案不限於此實施方式,並且多狹縫上部錐體70可具有多於兩個狹縫71,從而提供多於兩個主體部件,並且主體部件可以是非圓柱形的。
圖2的多狹縫上部錐體70的每個主體部件45、46具有部分圓柱形區域,所述部分圓柱形區域具有凹形內表面50、51和凸形外表面48、52。每個表面50、51、48、52鄰接朝向第一底部邊緣56或第二底部邊緣53向內漸縮的部分圓錐形區域57、58。由於此種漸縮,針對圖2所示的主體部件45、46中的每一個,底部邊緣56、53的半徑和長度L2小於頂部邊緣59、49的半徑和長度L1。例如,在一個實施方式中,每個頂部邊緣59、49的長度L1是每個底部邊緣56、53的長度L2的兩倍。
在圖2所示的實施方式中,第一主體部件45的頂部邊緣59的半徑和長度L1與第二主體部件46的頂部邊緣49的半徑和長度L1相同。在一個實施方式中,第一主體部件45的底部邊緣56的半徑和長度L2與第二主體部件46的底部邊緣53的半徑和長度L2相同。此外,在圖2所示的實施方式中,全部狹縫71可以具有相同寬度W,其中寬度W沿著狹縫的長度是固定的。然而,本揭示案不排除附加的主體部件和附加的狹縫。
在圖2所示的實施方式中,第一主體部件45具有第一側端81和第二側端83,並且第二主體部件46具有第一側端82和第二側端84。第一主體部件45的第一側端81與第二主體部件46的第一側端82由狹縫71的寬度W間隔開,從而在第一主體部件45的第一側端81與第二主體部件46的第一側端82之間形成間隙。此外,第一主體部件45的第二側端83與第二主體部件46的第二側端84由狹縫71的寬度W間隔開,從而在第一主體部件45的第二側端83與第二主體部件46的第二側端84之間形成間隙。在一個實施方式中,狹縫71的寬度W是從20 mm至25 mm。然而,可基於供紅外波在如圖3所示的處理腔室100中穿過上部圓頂121與高溫計167之間所必需的寬度來選擇一或更多個狹縫71的寬度W,和/或如本文參考圖3所論述的,可選擇一或更多個狹縫71的寬度W以影響上部圓頂121的溫度。
多狹縫上部錐體70的主體部件45、46可具有唇緣55、47。每個唇緣55、47允許由位於磊晶處理腔室100的腔室主體173內的環形板材177支撐每個主體部件45、46,如圖3所示。如圖2進一步圖示,每個唇緣55、47可具有孔85,使得每個主體部件45、46能緊固到位於磊晶處理腔室100內的環形板材177。然而,本揭示案不限於圖2所示的實施方式,並且錐體可通過其他附接方式而固定到磊晶處理腔室100。
圖3是根據一個實施方式的磊晶處理腔室100的示意截面圖。磊晶處理腔室100在腔室主體173中的透明上部圓頂121下方具有反應腔室102。在反應腔室102內在處理期間,磊晶膜在基板S上生長。反應腔室102包括基座103,基座103上安置基板S。環形板材177支撐在上部圓頂121上方的內部部件。圖3所示的實施方式是高生長速率磊晶處理腔室,其中在基板S與上部圓頂121之間的距離H可以是10 mm或更大。
基座103是當從上方觀察時具有圓形形狀的板材狀構件,並且與基板S相比具有略大的面積。基座103可以是多孔或無孔的,並且由基座支撐件106支撐。基座103中可具有一或更多個孔179以有助於控制基座103上的熱點的溫度。在另一實施方式中,基座103中可不具有孔。基座103從膜形成位置P1(在此位置,在基板S上形成膜)移動至基板運載位置P2(在此位置,基板S被傳送進出磊晶處理腔室100)。基座支撐件106可被配置為旋轉,使得當在膜形成位置P1處時,基座103和基板S繞基座支撐件106的軸旋轉。
根據此實施方式的處理腔室100是冷壁型磊晶生長處理腔室。上部圓頂121被配置為通過從位元於上部圓頂121上方的燈168接收熱量來加熱反應腔室102的內部。多狹縫上部錐體70位於上部圓頂121上方並且在複數個燈168之間。在一個實施方式中,上部圓頂121可由石英製成。在一個實施方式中,多狹縫上部錐體70可由鋁構成並且可進一步包括鍍金表面。
在基板處理期間,反應氣體通過進氣埠154引入腔室主體173。在此實施方式中,通過進氣埠154引入第一源氣體和第二源氣體。第二源氣體亦用作載氣。三種或更多種類型的氣體的混合、混成物可用作反應氣體。當通過進氣埠154引入反應氣體時,反應氣體沿著反應氣體供應路徑141流動,沿水平方向流過基板S的上表面104,並且隨後沿著氣體排放路徑142流動,直至在出氣埠157處離開磊晶處理腔室100。在磊晶處理腔室100中,氣體進氣埠154面對氣體出氣埠157,其中反應腔室102的中心位於兩者之間。
淨化氣體通過磊晶腔室底部161的中心被引入下部腔室164。淨化氣體通過在腔室主體173中形成的淨化孔144離開下部腔室164。淨化孔144與氣體排放路徑142連通,並且由此反應氣體和淨化氣體均通過氣體排放路徑142排放。
在磊晶處理腔室100的頂部的頂板材166固持至少兩個高溫計165、167。第一高溫計165通過中空管170量測基板S的溫度,並且位於多狹縫上部錐體70的中心的上方。第二高溫計167量測上部圓頂121的溫度。第二高溫計167位於多狹縫上部錐體70中的一個狹縫71上方,使得紅外波能從上部圓頂121穿過多狹縫上部錐體70中的狹縫71向上到達高溫計167。
空氣源(未圖示)通過第一開口172而將冷卻空氣引入腔室主體173。空氣被引導通過腔室主體173,使得空氣沿著如圖3所示的空氣路徑175行進。空氣進入多狹縫上部錐體70的頂部,向下行進通過多狹縫上部錐體70,離開多狹縫上部錐體70,向下行進通過中心開口105,並且隨後在中心開口105下方和在上部圓頂121上方水平行進,所述上部圓頂位於基板S的上表面104上方。空氣隨後通過第二開口174離開腔室主體173。
通過多狹縫上部錐體70的空氣流進一步由多狹縫上部錐體70內的阻擋板材171控制。阻擋板材171由在多狹縫上部錐體70的中心內從頂部板材166懸置的中空管170支撐。阻擋板材171分裂沿著空氣路徑175通過多狹縫上部錐體70的空氣流並且引導在阻擋板材171周圍的空氣,從而迫使空氣沿著多狹縫上部錐體70的內壁並還迫使額外空氣通過狹縫71的寬度W流出。通過增大或減小狹縫71的寬度W,將進一步控制穿過由狹縫71的寬度W提供的間隙的空氣量,並控制沿著空氣路徑175經過多狹縫上部錐體70的底部邊緣56、53流出的空氣量。
下文描述使用根據磊晶處理腔室100的此實施方式的磊晶生長設備的膜形成方法。
首先,將基座103移動至基板運載位置P2,將基板S從腔室主體173中的基板運載口傳送至磊晶處理腔室100中,並且將基座103移動至膜形成位置P1。例如,在一個實施方式中,具有200 mm直徑的矽基板用作基板S。隨後,將基板S從待機溫度(例如,800℃)加熱至生長溫度(例如,1100℃)。將淨化氣體(例如,氫)引入下部腔室164中。將反應氣體(例如,三氯矽烷作為第一源氣體並且氫作為第二源氣體)從反應氣體進氣埠154沿著反應氣體供應路徑141引入反應腔室102中。反應氣體在基板S的上表面104上形成邊界層並且在邊界層中發生反應。由此,在基板S上形成矽膜。將反應氣體沿著與反應腔室102連通的氣體排放路徑142排放。將淨化氣體通過淨化孔144排放至氣體排放路徑142。在完成磊晶生長之後,將溫度降低至待機溫度並且將基板S傳送出磊晶處理腔室100。
在一個實施方式中,當將多狹縫上部錐體70如圖2所示放置在如圖3所示的磊晶處理腔室100內時,使主體部件45、46關於通過開口105的中心的垂直軸而橫向間隔開來,所述垂直軸亦在磊晶處理腔室100中的處理期間貫穿上部圓頂121的中心和基板S的中心。在此實施方式中,將狹縫71間隔開180度。
當冷卻空氣在處理期間沿著圖3所示的空氣路徑175吹過磊晶處理腔室100時,與上部圓頂121的其餘表面相比,較少冷卻空氣將會到達位於狹縫71正下方的上部圓頂121的上表面104,因為在狹縫71附近流入多狹縫上部錐體70的頂部的至少一些空氣將會離開多狹縫上部錐體70的側部,而非向下流至多狹縫上部錐體70下方的上部圓頂121上。因此,將至少一個狹縫71放置在上部圓頂121的上表面104的已知在處理期間是低溫區域的區域上方將會導致較少冷卻空氣向下流至此低溫區域上,因此增加該低溫區域的溫度。
此外,通過增加沿著空氣路徑175的冷卻空氣流的速度,連同將一或更多個狹縫71策略地放置在上部圓頂121上的一或更多個低溫區域上方,冷卻空氣的增加的速度將會導致直接吹至上部圓頂121的一或更多個高溫區域(不位於由狹縫71提供的間隙下方)上的冷卻空氣的增加的速度/幅度,從而降低高溫區域的溫度。將會在不降低一或更多個低溫區域的溫度的情況下發生高溫區域的溫度降低,因為吹至低溫區域上方的多狹縫上部錐體70中的冷卻空氣將通過由狹縫71提供的間隙逃逸至錐體70的側面,所述狹縫位於低溫區域上方,進而導致直接吹至低溫區域上的冷卻空氣的降低的速度/幅度,此將增加低溫區域的溫度。因此,通過將一或更多個狹縫71放置在上部圓頂121的一或更多個低溫區域上方,並且通過增加在磊晶處理腔室100中沿著空氣路徑175的冷卻空氣流的速度,低溫區域的溫度將在處理期間增加,高溫區域的溫度將在處理期間降低,從而整個上部圓頂121的表面的溫度將會變得更加均勻。在狹縫71下方的、上部圓頂121的低溫區域可替代地通過增加或減小狹縫71的寬度W並允許更多或更少的冷卻空氣直接吹到低溫區域上進行控制。
例如,在一個實施方式中,在上部圓頂121下方的溫度應控制為從485至515℃以防止在上部圓頂121的排氣端發生沉積。因此,在上部圓頂121的排氣端上的低溫區域(低於485℃)和在上部圓頂121的排氣端上的高溫區域(高於515℃)存在沉積風險。應策略地放置多狹縫上部錐體70,使得將狹縫71放置於上部圓頂121的排氣端的低溫區域上方。同樣應策略地放置多狹縫上部錐體70,使得沒有狹縫71放置於上部圓頂121的排氣端的高溫區域上方。隨後,可以增加冷卻空氣流速使其高於傳統空氣流速。例如,在一個實施方式中,在處理期間使用現有技術錐體30施加的傳統空氣流速在9 m/s至12 m/s的範圍中,當使用本文所述的多狹縫上部錐體70時,空氣流速被增加至13 m/s至14.5 m/s的範圍。狹縫71的放置將會導致上部圓頂121上的低溫區域的溫度增加。冷卻空氣流速的增加將會導致上部圓頂121上的高溫區域的溫度降低。因此,降低在高溫區域和低溫區域上發生沉積的可能性。
儘管上述內容針對本揭示案的實施方式,但是在不背離本揭示案的基本範疇的情況下,可以設計出本揭示案的其他和另外的實施方式,並且本揭示案的範疇由隨附專利申請範圍確定。
30‧‧‧錐體
45‧‧‧第一主體部件
46‧‧‧第二主體部件
47‧‧‧唇緣
48‧‧‧凸形外表面
49‧‧‧頂部邊緣
50‧‧‧凹形內表面
51‧‧‧凹形內表面
52‧‧‧凸形外表面
53‧‧‧底部邊緣
55‧‧‧唇緣
56‧‧‧底部邊緣
57‧‧‧部分圓錐形區域
58‧‧‧部分圓錐形區域
59‧‧‧頂部邊緣
70‧‧‧錐體
71‧‧‧狹縫
81‧‧‧第一側端
82‧‧‧第一側端
83‧‧‧第二側端
84‧‧‧第二側端
85‧‧‧孔
100‧‧‧處理腔室
102‧‧‧反應腔室
103‧‧‧基座
104‧‧‧上表面
105‧‧‧開口
106‧‧‧基座支撐件
121‧‧‧上部圓頂
141‧‧‧反應氣體供應路徑
142‧‧‧氣體排放路徑
144‧‧‧淨化孔
154‧‧‧進氣埠
157‧‧‧出氣埠
161‧‧‧外延腔室底部部分
164‧‧‧下部腔室
165‧‧‧第一高溫計
166‧‧‧頂板材
167‧‧‧第二高溫計
168‧‧‧燈
170‧‧‧中空管
171‧‧‧阻擋板材
172‧‧‧第一開口
173‧‧‧腔室主體
174‧‧‧第二開口
175‧‧‧空氣路徑
177‧‧‧環形板材
179‧‧‧孔
L1‧‧‧長度
L2‧‧‧長度
W‧‧‧寬度
為了能夠詳細理解本揭示案的上述特徵結構,可通過參考實施方式獲得上文簡要概述的本揭示案的更特定的描述,所述實施方式中的一些示出於附圖中。然而,應當注意,附圖僅示出了本揭示案的典型實施方式,並且因此不應視為限制本揭示案的範疇,因為本揭示案可允許其他等效的實施方式。
圖1(現有技術)是根據先前實施方式的錐體30的透視圖;
圖2是根據一個實施方式的本揭示案的多狹縫上部錐體70的透視圖;以及
圖3是根據一個實施方式的具有多狹縫上部錐體70的磊晶處理腔室100的示意截面圖。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
Claims (18)
- 一種處理腔室,包括: 一基座,所述基座被定位在位於所述處理腔室的一第一側上的一氣體引入埠與位於所述處理腔室的一第二側上的一氣體排放埠之間; 一圓頂,所述圓頂在所述處理腔室中在所述基座上方;以及 一板材,所述板材在所述處理腔室中在所述圓頂上方,所述板材具有一中心開口並且支撐在所述中心開口中由兩個或更多個間隙橫向分離的至少兩個部件,每個部件具有: 一上部區域,所述上部區域具有一凹形內表面和一凸形外表面;以及 一下部區域,所述下部區域從所述上部區域向內漸縮。
- 如請求項1所述的處理腔室,其中每個部件的所述上部區域具有一固定曲率半徑,並且每個部件的所述下部區域具有一變化曲率半徑。
- 如請求項1所述的處理腔室,其中每個部件的所述上部區域具有接觸所述板材的一唇緣。
- 如請求項1所述的處理腔室,進一步包括一腔室蓋,所述腔室蓋在所述板材中的所述中心開口上方支撐兩個高溫計。
- 如請求項4所述的處理腔室,其中至少一個高溫計被定位在所述兩個或更多個間隙的至少一個間隙上方的所述腔室蓋上。
- 如請求項1所述的處理腔室,包括在所述板材下方的複數個燈。
- 如請求項1所述的處理腔室,其中在所述處理腔室中的所述板材是一環形板材並且每個部件具有: 一部分圓柱形區域,所述部分圓柱形區域具有一第一凹形內表面、一第一凸形外表面、以及所述第一凹形內表面的一固定曲率半徑;以及 一部分圓錐形區域,所述部分圓錐形區域具有一第二凹形內表面、一第二凸形外表面、以及所述第二凹形內表面的一變化曲率半徑,其中所述第二凹形內表面從所述部分圓柱形區域延伸至小於所述固定曲率半徑的一第二曲率半徑。
- 如請求項7所述的處理腔室,其中所述第一部件的所述部分圓柱形區域具有接觸所述環形板材的一唇緣並且所述第二部件的所述部分圓柱形區域具有接觸所述環形板材的一唇緣。
- 如請求項7所述的處理腔室,進一步包括一腔室蓋,所述腔室蓋在所述環形板材中的所述中心開口上方支撐兩個高溫計。
- 如請求項9所述的處理腔室,其中至少一個高溫計被定位在所述兩個或更多個間隙的至少一個間隙上方的所述腔室蓋上。
- 一種用於一磊晶腔室中的部件,所述部件包括: 一部分圓柱形區域,所述部分圓柱形區域具有一第一凹形內表面、一第一凸形外表面、以及所述第一凹形內表面的一固定曲率半徑;以及 一部分圓錐形區域,所述部分圓錐形區域具有一第二凹形內表面、一第二凸形外表面、以及所述第二凹形內表面的一變化曲率半徑,其中所述第二凹形內表面從所述部分圓柱形區域延伸至小於所述固定曲率半徑的一第二曲率半徑。
- 如請求項11所述的部件,其中所述部分圓柱形區域進一步包括從所述第一凸形外表面向磊晶伸的一唇緣。
- 如請求項11所述的部件,其中所述部件由鋁形成。
- 如請求項13所述的部件,進一步包括在所述鋁上塗鍍的金。
- 一種用於磊晶腔室中的錐體,所述錐體包括支撐以下各項的一環形板材: 一第一部件,所述第一部件具有: 一部分圓柱形區域,所述部分圓柱形區域具有一第一凹形內表面、一第一凸形外表面、所述第一凹形內表面的一固定曲率半徑、以及從所述第一凸形外表面向磊晶伸的一唇緣;以及 一部分圓錐形區域,所述部分圓錐形區域具有一第二凹形內表面、一第二凸形外表面、所述第二凹形內表面的一變化曲率半徑、以及從所述第二凸形外表面向磊晶伸的一唇緣,其中所述第二凹形內表面從所述部分圓柱形區域延伸至小於所述固定曲率半徑的一第二曲率半徑;以及 一第二部件,所述第二部件具有: 一部分圓柱形區域,所述部分圓柱形區域具有一第一凹形內表面、一第一凸形外表面、從所述第一凸形外表面向磊晶伸的一唇緣、以及所述第一凹形內表面的一固定曲率半徑;以及 一部分圓錐形區域,所述部分圓錐形區域具有一第二凹形內表面、一第二凸形外表面、所述第二凹形內表面的一變化曲率半徑、以及從所述第二凸形外表面向磊晶伸的唇緣,其中所述第二凹形內表面從所述部分圓柱形區域延伸至小於所述固定曲率半徑的一第二曲率半徑。
- 如請求項15所述的錐體,其中所述第一部件和所述第二部件是相同的。
- 如請求項15所述的錐體,其中所述第一部件和所述第二部件由鋁製成。
- 如請求項17所述的錐體,進一步包括在所述鋁上塗鍍的金。
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CN107761074B (zh) | 2021-05-25 |
TWM561321U (zh) | 2018-06-01 |
CN107761074A (zh) | 2018-03-06 |
CN207659523U (zh) | 2018-07-27 |
US10446420B2 (en) | 2019-10-15 |
US20200020556A1 (en) | 2020-01-16 |
US20180053670A1 (en) | 2018-02-22 |
TWI733871B (zh) | 2021-07-21 |
KR20180020926A (ko) | 2018-02-28 |
JP7030448B2 (ja) | 2022-03-07 |
KR102434948B1 (ko) | 2022-08-19 |
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