TW201740443A - 封裝體及其形成方法 - Google Patents

封裝體及其形成方法 Download PDF

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Publication number
TW201740443A
TW201740443A TW106109466A TW106109466A TW201740443A TW 201740443 A TW201740443 A TW 201740443A TW 106109466 A TW106109466 A TW 106109466A TW 106109466 A TW106109466 A TW 106109466A TW 201740443 A TW201740443 A TW 201740443A
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Taiwan
Prior art keywords
polymer layer
sidewall
metal
wafer
die
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TW106109466A
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English (en)
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TWI650807B (zh
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邱銘彥
張兢夫
黃信傑
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台灣積體電路製造股份有限公司
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Abstract

一種封裝體的形成方法包括：形成覆蓋晶圓中的金屬通孔的聚合物層；對所述晶圓開槽，以形成溝槽，所述溝槽從所述聚合物層的頂表面延伸至所述晶圓中；以及在所述晶圓上執行晶粒切割，以將所述晶圓分割為多個元件晶粒。切口穿過所述溝槽。將所述元件晶粒中的一者放置在載體上方。將包封材料施配在所述元件晶粒上方和周圍。所述方法更包括按壓和固化所述包封材料。在所述包封材料固化之後，所述聚合物層的側壁傾斜。對所述包封材料執行平坦化至所述聚合物層和所述金屬通孔暴露出來。將重分佈線形成在所述金屬通孔上方且電耦合至所述金屬通孔。

Description

封裝體及其形成方法
本發明實施例是有關於一種封裝體及其形成方法。
隨著半導體技術的發展，半導體晶圓/晶粒愈來愈小。同時，需要將更多功能整合至半導體晶粒中。因此，半導體晶粒需要在較小區域中增加更多的I/O墊，且I/O墊的密度隨時間而增加。因此，半導體晶粒的封裝變得更困難，對於封裝體的良率有不利的影響。
常規封裝技術可分割成兩個類別。在第一類別中，晶圓上的晶粒在被切割之前封裝。此封裝技術具有一些有利的特徵，例如產率（throughput）較高以及成本較低。此外，所需要的底部填充物或模製化合物較少。然而，此封裝技術也具有缺點。因為晶粒的尺寸變得愈來愈小，且相應封裝體可僅為扇入型封裝體，其中每一晶粒的I/O墊限於相應晶粒的表面正上方的區域。在晶粒的有限區域的情況下，I/O墊的數目因為I/O墊的間距的限制而受到限制。如果襯墊的間距減小，可能會發生焊橋（solder bridge）。另外，在固定球尺寸的要求下，焊球必須具有特定尺寸，這又限制了可以在晶粒的表面上封裝的焊球的數目。
在另一類別的封裝中，晶粒在被封裝之前從晶圓切割下來。此封裝體技術的有利特徵是形成扇出封裝體的可能性，這意味著晶粒上的I/O墊可重新分配至比晶粒大的區域，因此封裝在晶粒的表面上的I/O墊的數目可增加。此封裝技術的另一有利特徵是，封裝“已知良好晶粒”，而丟棄有缺陷晶粒，因此成本和精力不會浪費在有缺陷的晶粒上。
本發明實施例提供一種封裝體的形成方法，包括：形成覆蓋晶圓中的金屬通孔的聚合物層；對所述晶圓開槽，以形成溝槽，其中所述溝槽從所述聚合物層的頂表面延伸至所述晶圓中；以及在所述晶圓上執行晶粒切割，以將所述晶圓分割為多個元件晶粒。切口穿過所述溝槽。將所述元件晶粒中的一者放置在載體上方。將包封材料施配在所述元件晶粒上方和周圍。所述方法更包括按壓和固化所述包封材料。在所述包封材料固化之後，所述聚合物層的側壁傾斜。對所述包封材料執行平坦化，至所述聚合物層和所述金屬通孔暴露出來。將重分佈線形成在所述金屬通孔上方且電耦合至所述金屬通孔。
本發明實施例還提供一種封裝體的形成方法包括：在晶圓上執行開槽，以形成從晶圓的頂表面延伸至晶圓的中間水平面的多個溝槽；以及在晶圓上執行晶粒切割以將晶圓分割為多個元件晶粒。晶粒切割的切口穿過所述多個溝槽的對應者，且所述切口比所述多個溝槽的對應者窄。將所述多個元件晶粒中的元件晶粒放置在載體上方。元件晶粒包封在包封材料中。在包封元件晶粒之後，元件晶粒的側壁傾斜。所述方法更包括在包封材料上執行平坦化直至元件晶粒中的金屬通孔暴露，以及形成在金屬通孔上方且電耦合至金屬通孔的重分佈線。
本發明實施例又提供一種封裝體包括：元件晶粒、包封材料、金屬柱以及重分佈線。元件晶粒包括：半導體基底；內連結構，其在所述半導體基底上方；金屬柱，其在所述內連結構上方且電耦合至所述內連結構；以及聚合物層，其包圍所述金屬柱，其中所述聚合物層具有既不平行於也不垂直於所述半導體基底的主要底表面的傾斜側壁。包封材料將所述元件晶粒包封在其中。重分佈線形成在所述金屬柱上方且電耦合至所述金屬柱。
以下揭露內容提供用於實施所提供的標的之不同特徵的許多不同實施例或實例。以下所描述的構件及配置的具體實例是為了以簡化的方式傳達本發明為目的。當然，這些僅僅為實例而非用以限制。舉例來說，於以下描述中，在第二特徵上方或在第二特徵上形成第一特徵可包括第一特徵與第二特徵形成為直接接觸的實施例，且亦可包括第一特徵與第二特徵之間可形成有額外特徵使得第一特徵與第二特徵可不直接接觸的實施例。此外，本發明在各種實例中可使用相同的元件符號及/或字母來指代相同或類似的部件。元件符號的重複使用是為了簡單及清楚起見，且並不表示所欲討論的各個實施例及/或配置本身之間的關係。
另外，為了易於描述附圖中所繪示的一個構件或特徵與另一組件或特徵的關係，本文中可使用例如「在…下」、「在…下方」、「下部」、「在…上」、「在…上方」、「上部」及類似術語的空間相對術語。除了附圖中所繪示的定向之外，所述空間相對術語意欲涵蓋元件在使用或操作時的不同定向。設備可被另外定向（旋轉90度或在其他定向），而本文所用的空間相對術語相應地作出解釋。
依據各種示範性實施例提供一種扇出型封裝體和形成所述封裝體的方法。實施例的一些變化亦將討論。在全文各視圖及說明性實施例中，以相似參考標號表示相似元件。
圖1至17B繪示依據一些實施例的封裝體的形成的中間階段的剖面圖。圖1至17B中的步驟亦示意性地繪示在如圖18中所示的製程流程200中。
請參照圖1，提供晶圓2。晶圓2包括基底10，其可為半導體基底（例如矽基底），其可以以其它半導體材料來形成（例如鍺化矽、碳化矽、III-V化合物半導體材料或類似者）。在基底10的表面處可形成半導體元件12，半導體元件12可以是電晶體、電容器、電阻器、二極體或類似者。在基底10上方形成內連結構14（其包括金屬線和形成在其中的通孔（via，未圖示）。金屬線和通孔的材料可以是銅或銅合金，且可使用鑲嵌製程來形成。金屬線和通孔電耦合至半導體元件12。內連結構14可包括層間電介質（ILD）16和金屬間電介質（IMD）18，其中接觸插塞（例如源極/汲極插塞和閘極接觸插塞）形成於ILD 16中，而金屬線和通孔形成於IMD 18中。依據一些替代實施例，晶圓2為中介片晶圓（interposer wafer），且實質上沒有形成積體電路元件，所述的積體電路元件包括形成在其中的電晶體、電阻器、電容器、電感器和/或類似物。
在內連結構14上方形成金屬接墊（metal pad）20。金屬接墊20可包括鋁（Al）、銅（Cu）、銀（Ag）、金（Au）、鎳（Ni）、鎢（W）、其合金，和/或其多層。金屬接墊20可經由例如是金屬線、通孔和其下方內連結構14中的接觸插塞，而電耦合至半導體元件12。形成保護層（passivation layer）22，以覆蓋金屬接墊20的邊緣部分。依據一些示範性實施例，保護層22包括氧化矽層和位於所述氧化矽層上方的氮化矽層，但可使用其它介電材料。於保護層22中形成開口，以暴露出下方的金屬接墊20。
在保護層22上方形成聚合物層24，其中聚合物層24延伸至保護層22中的開口中。聚合物層24的材料可以是聚苯並噁唑（PBO）、苯並環丁烯（BCB）、聚醯亞胺或類似的材料。於聚合物層24中形成開口，以暴露出金屬接墊20。
形成金屬通孔（metal via）26，金屬通孔26延伸至聚合物層24中，並與金屬接墊20接觸。相應形成步驟繪示在圖18所繪示的製程流程的步驟202。金屬通孔26的材料可以是銅、鋁、鎳、其合金和/或其多層。依據本發明的一些實施例，形成金屬通孔26的方法包括圖案化聚合物層24以形成開口，藉由此開口，暴露出金屬接墊20。隨後在聚合物層24的上方形成晶種層（未圖示），且此晶種層延伸至聚合物層24的開口中。晶種層的材料可以是阻障/黏著層（包括鈦、氮化鈦、鉭、氮化鉭或類似者）和所述阻障/黏著層上方的銅或銅合金層。隨後在晶種層上方形成光阻（未圖示），接著進行圖案化，再進行電鍍製程，以形成金屬通孔26。隨後移除光阻。其後，蝕刻先前被光阻覆蓋的部分晶種層，以留下金屬通孔26。金屬通孔26經由金屬接墊20以及內連結構14中的金屬線和通孔電耦合至積體電路元件12。
之後，形成聚合物層28，以覆蓋和保護金屬通孔26。相應步驟繪示在圖18所繪示的製程流程的步驟204。依據本發明的一些實施例，聚合物層28由PBO、聚醯亞胺、BCB或類似者形成。聚合物層28的材料可以與聚合物層24的材料相同或不同。依據一些實施例，聚合物層28的材料比聚合物層24的材料軟。
之後，執行背面研磨，以減小晶圓2的厚度，所得結構繪示於圖2。相應步驟繪示在圖18所繪示的製程流程的步驟206。舉例來說，背面研磨可以將晶圓2的頂面附接到載體上（未圖示），並在基底10的背面上執行機械研磨或化學機械研磨（CMP）來執行。基底10的厚度可減小至例如是約20微米至數百微米。
請參照圖3A，對晶圓2開槽。相應步驟繪示在圖18所繪示的製程流程的步驟208。開槽可藉由在晶圓2上投射雷射光束，以燒掉晶圓2的一些部分來執行。開槽後在切割道30中形成了溝槽34，這使晶圓2中的兩相鄰行或列的晶片（chip）分離。在晶圓2的俯視圖中，有多個溝槽34形成，其中晶圓2的每一切割道30中形成有與溝槽34相同的溝槽。因此溝槽形成俯視圖中的柵格圖案。所述多個溝槽的剖面圖類似於所繪示和所討論的溝槽34，而不單獨地繪示。
溝槽34穿過聚合物層24和28，且可進一步穿過內連結構14而到達基底10。因此，溝槽34暴露出因雷射光束而凹陷的基底10的頂表面。溝槽34可進一步延伸至基底10的頂表面與底表面之間的中間水平面（intermediate level）。
依據一些實施例，溝槽34具有傾斜側壁36，其可藉由傾斜雷射光束的投射方向（projecting direction）以形成合乎需要的傾斜角而形成。舉例來說，傾斜角θ1可在約75度與約85度之間的範圍內，但可採用不同角度。由於傾斜角θ1是透過傾斜雷射光束而造成的，因此雷射光束的傾斜角與傾斜角θ1是相同的。依據一些實施例，執行兩個雷射光束掃描（向相對方向傾斜），以形成向相對方向傾斜的兩個傾斜側壁36。
圖3B繪示依據一些替代實施例的開槽晶圓2，其中溝槽34的邊緣36垂直或大體上垂直（例如傾斜角θ2在約88度與90度之間）。具有垂直側壁的溝槽34可透過在垂直於基底10的頂表面的垂直方向上投射雷射光束而形成。
圖4繪示將晶圓2單粒化（晶粒切割（die-saw））為多個晶片/元件晶粒32。相應步驟繪示在圖18所繪示的製程流程的步驟210。舉例來說，單粒化可透過使用刀具35切穿切割道30來執行。依據一些實施例，溝槽34的寬度W1在約40 µm與約50 µm之間的範圍內。單粒化所造成的切口的寬度W2可在約30 µm與約35 µm之間的範圍內。有利的是，在開槽的過程中，對多個層（例如層28、24、22、18和16等）預開槽。此外，由於切口的寬度W2小於溝槽34的寬度W1，因此在單粒化時，刀具並不會切穿已經開槽的層，因此，層28、24、22、18和16將不會被刀具剝離/分層（peeled/delaminated）。所得元件晶粒32可包括邏輯晶粒，例如是中央處理單元（CPU）晶粒、圖形處理單元（GPU）晶粒、移動應用晶粒（mobile application dies）等。
圖5至17A繪示依據本發明的一些實施例的元件晶粒32在封裝的中間階段。請參照圖5，提供載體（carrier）40，並將黏著層（adhesive layer）42置於載體40上。載體40可為空白玻璃載體、空白陶瓷載體或類似者，且可具有俯視為圓形的半導體晶圓的形狀。載體40有時稱作為載體晶圓（carrier wafer）。黏著層42可以例如是由光熱轉換（LTHC）材料形成，但亦可使用其它類型的黏著劑。依據本發明的一些實施例，黏著層42可以在光的熱量下分解，且因此可將載體40從形成在載體40上的結構釋出/分離（release）。
在黏著層42上方形成介電層44。依據本發明的一些實施例，介電層44為聚合物層，其材料包括光敏聚合物，例如是聚苯並噁唑（PBO）、聚醯亞胺等。依據一些實施例，介電層44由氮化物（例如氮化矽）、氧化物（例如氧化矽、磷矽玻璃（PSG）、硼矽玻璃（BSG）、硼磷矽玻璃（BPSG））或類似者形成。
圖6至8繪示導電/金屬柱（conductive/metal posts）的形成。相應步驟繪示在圖18所繪示的製程流程的步驟212。請參照圖6，導電晶種層（conductive seed layer）50例如是以物理氣相沉積（PVD）形成在介電層44上方。導電晶種層50可以是金屬晶種層，包括銅、鋁、鈦、其合金或其多層。依據本發明的一些實施例，導電晶種層50包括第一金屬層（例如鈦層（未圖示））和位於所述第一金屬層上方的第二金屬層（例如銅層（未圖示））。依據本發明的替代實施例，導電晶種層50包括單一金屬層，例如銅層，其材料可以是實質上純銅或銅合金。
罩幕層52（例如光阻）形成於導電晶種層50上方，且隨後使用微影罩幕圖案化。依據本發明的一些實施例，光阻52為乾膜，其層壓至導電晶種層50上。依據一替代實施例，光阻52可以旋塗法形成。圖案化（曝光和顯影）後，開口54形成於光阻52中，開口54暴露出部分的導電晶種層50。
如圖7中所繪示，經由電鍍於開口54中形成導電柱56，電鍍可為電電鍍或無電電鍍。導電柱56電鍍在導電晶種層50的暴露部分上。導電柱56可為金屬柱，例如是銅、鋁、鎢、鎳或其合金。
在電鍍導電柱56之後，移除光阻52。因此，暴露出先前被光阻52覆蓋的部分導電晶種層50。接下來，執行蝕刻步驟，以移除導電晶種層50的暴露部分，其中所述蝕刻可為非等向性蝕刻或等向性蝕刻。另一方面，導電晶種層50與導電柱56重疊的部分保持未被蝕刻。全文中，導電晶種層50的剩餘下方部分稱作導電柱56的底部部分。所得結構繪示於圖8。在圖8和後續圖式中，導電晶種層50的剩餘部分被視為是導電柱56的部分，而不單獨地繪示。
圖9繪示介電層44和載體40上方的元件晶粒（device die）32的放置。相應步驟繪示在圖18所繪示的製程流程的步驟214。元件晶粒32可經由晶粒附接膜（die attach film，未圖示）附接至介電層44上。晶粒附接膜可在單粒化之前黏著至晶圓2（圖4）的底表面，並接著在單粒化步驟中連同晶圓2一起切割。因此，晶粒附接膜的邊緣與元件晶粒的邊緣32共端（co-terminus）。應瞭解，在以晶圓級執行封裝，雖然繪示出一個元件晶粒32，但實際上等同於元件晶粒32的多個放置的元件晶粒放置在介電層44上方，其中所述多個放置的元件晶粒排列成包括多個行和多個列的陣列。
請參照圖10，包封材料（encapsulating material）60施配在元件晶粒32和導電柱56上。相應步驟繪示在圖18所繪示的製程流程的步驟216。包封材料60填充於元件晶粒32與導電柱56之間的間隙中，且可接觸介電層44。包封材料60可包括模製化合物、模製底部填充物、環氧樹脂或樹脂。包封材料60可包括聚合物型的材料和填充劑粒子，其材料可以是氧化矽、氧化鋁或類似者。包封材料60的頂表面高於金屬通孔26和導電柱56的頂端。
請參照圖11，將包封材料60壓縮和固化。相應步驟繪示在圖18所繪示的製程流程的步驟218。壓縮可以使用頂部模具62和離型膜（release film）64推擠包封材料60來執行。推力由箭頭66表示。經由所述壓縮，包封材料60可以較均勻地分布，以使得包封材料60之中不會形成空隙。在壓縮期間，模具（未圖示）包圍載體40且可在載體40下方以固持包封材料60。在壓縮期間，包封材料60例如透過加熱而固化。
如圖11中所繪示，產生傾斜側壁36'。有若干原因可造成具有如圖11中所繪示的輪廓（profile）的傾斜側壁36'。舉例來說，傾斜側壁36'接收向下按壓力（downward pressing force），向下按壓力因為側壁36（圖4）的傾斜而部分轉換為橫向力。並且，包封材料60的壓縮也促成橫向力。頂層24和28為聚合物層，其較軟且因此產生將這些層朝向元件晶粒32的中心線推動的橫向力。此外，頂層24和28的側壁（其為部分側壁36'）為彎曲的。依據一些實施例，頂層24和28的每一側壁是連續彎曲的，其斜率無急劇改變。在頂層24和28之間的介面處的斜率可急劇改變或無急劇改變。當壓縮時，包封材料60固化，且如圖11中所繪示的輪廓固定。隨後，將模具62和離型膜64移除，如圖12所繪。
接下來，執行平坦化步驟（例如CMP步驟或研磨步驟），以使包封材料60平坦化，直至導電柱56和金屬通孔26暴露出來。相應步驟繪示在圖18所繪示的製程流程的步驟220。所得結構繪示於圖13。元件晶粒32的金屬通孔26也由於平坦化而暴露出來。由於平坦化，導電柱56的頂表面與金屬通孔26的頂表面實質上水平（共平面），且與包封材料60的頂表面實質上水平（共平面）。由於平坦化，包封材料60中的一些球面填充劑粒子（未圖示）的頂部部分被移除，因此留下具有平面頂表面和圓形側壁及底表面的填充劑粒子。
請參照圖14，將一層或多層介電層68和相應重分佈線（RDL）70形成在包封材料60上、導電柱56和金屬通孔26上方。相應步驟繪示在圖18所繪示的製程流程的步驟222。由於RDL 70在元件晶粒32的前側上，因此RDL 70稱作前側RDL。依據本發明的一些實施例，介電層68的材料包括聚合物（例如PBO、聚醯亞胺等）。依據本發明的一些替代實施例，介電層68的材料包括無機介電材料（例如氮化矽、氧化矽、氮氧化矽等）。
RDL 70經形成以電耦合至金屬通孔26和導電柱56。RDL 70還可將金屬通孔26和導電柱56彼此互連。RDL 70可包括金屬跡線（metal trace）（金屬線）以及位在金屬跡線下方且連接至金屬跡線的通孔。依據本發明的一些實施例，RDL 70經由電鍍製程形成，其中每一層RDL 70包括晶種層（未圖示）以及位於所述晶種層上方的電鍍的金屬材料。晶種層和電鍍的金屬材料可以是相同材料或不同材料。隨後，形成球下金屬（under-bump metallurgies，UBM）72，其延伸至頂介電層68中且接觸頂RDL 70中的金屬接墊。
如圖15中所繪示，將電連接件（electrical connectors）76形成於UBM 72上。電連接件76的形成可包括將焊球（solder balls）放置在RDL 70上方，並接著回焊所述焊球。依據本發明的一些替代實施例，電連接件76的形成包括執行電鍍步驟，以在RDL 70上方形成焊料區（solder regions），並接著回焊所述焊料區。電連接件76還可包括金屬支柱，或金屬支柱和焊料封蓋，其也可經由電鍍形成。全文中，包括元件晶粒32、導電柱56、包封材料60、RDL 70和介電層68的組合結構將稱作複合晶圓（composite wafer）74，其為包括多個元件晶粒32的複合晶圓。接著，載體40（圖14）可從複合晶圓74去結合（de-bonded）。圖15中還繪示表面安裝元件78（其可為離散被動元件（discrete passive device），例如電容器、線圈、變壓器或類似者）經由焊料區80結合至複合晶圓74。
請參照圖16，於介電層44中形成開口82，以暴露導電柱56。舉例來說，開口82可經由鐳射鑽孔（laser drill）形成。隨後執行晶粒切割，以將複合晶圓74單粒化為多個封裝體86，每一封裝體86包括（至少一）元件晶粒32和對應導電柱56。相應步驟也繪示在圖18所繪示的製程流程的步驟224。依據本發明的一些實施例，晶粒切割可使用刀具來執行，在晶粒切割期間旋轉刀具，以裁切複合晶圓74。相應步驟繪示在圖18所繪示的製程流程的步驟224。
圖17A繪示將封裝體元件88和92結合至封裝體86，因而形成封裝體94。依據本發明的一些實施例，封裝體元件88可包括元件晶粒，其可為記憶體晶粒（例如靜態隨機存取記憶體（SRAM）晶粒、動態隨機存取記憶體（DRAM）晶粒等）。封裝體元件92可為封裝體、封裝體基底、印刷電路板（PCB）、中介片（interposer）或類似者。結合之後，將底部填充物（未圖示）置於封裝體88與封裝體元件88和92之間的間隙中，且隨後固化。
在如圖17A中所繪示的封裝體94中，元件晶粒32的側壁36'包括傾斜部分。舉例來說，傾斜部分36'A為聚合物層28的側壁，傾斜部分36'B為聚合物層24的側壁，而部分36C'（其可為傾斜、不傾斜，或部分傾斜）為保護層22、介電層16和18以及基底10的側壁。因此，包封材料60與元件晶粒32之間的介面也包括傾斜部分。
依據一些實施例，聚合物層28的側壁部分36'A具有傾斜角θ3，其可在約50度與約70度之間的範圍內。聚合物層28的頂表面相對於相應底表面橫向（朝向元件晶粒32的垂直中心線）凹入的距離X2（也請參照圖11）在約2 µm與約5 µm之間的範圍內。聚合物層28的厚度Y2可在約5 µm與約15 µm之間的範圍內。聚合物層24的側壁部分36'B具有傾斜角θ4，其大於傾斜角θ3。傾斜角θ4可在約70度與約85度之間的範圍內。聚合物層24的頂表面相對於相應底表面橫向凹入的距離X1在約1 µm與約2 µm之間的範圍內。聚合物層24的厚度Y1可在約4 µm與約6 µm之間的範圍內。
側壁36'A和36'B也可以是彎曲的。此外，儘管側壁36'A和36'B的斜率比率具有（或不具有）不連續性，但每一側壁36'A和36'B的斜率可連續改變，其中每一側壁36'A和36'B的上部部分比其相應的下部部分更加傾斜。
此外，依據聚合物層24和28的厚度，Y1和Y2距離X1可大於、小於或等於距離X2。舉例來說，比率X2/X1可在約0.1與約0.5之間的範圍內，約0.6與約1之間的範圍內，約1與約2之間的範圍內，或約2與約8之間的範圍內。
聚合物層28的頂表面從基底10的相應最外邊緣橫向凹入距離X3，距離X3可在約0.1 µm與約1 µm之間的範圍內，在約1.1 µm與約3 µm之間的範圍內，在約3.1 µm與約5 µm之間的範圍內，在約5.1 µm與約10 µm之間的範圍內，或在約10.1 µm與約20 µm之間的範圍內。聚合物層28的頂表面也可以從透過開槽形成的基底10的相應邊緣橫向凹入距離X4，距離X4可在約0.1 µm與約1 µm之間的範圍內，在約1.1 µm與約3 µm之間的範圍內，在約3.1 µm與約5 µm之間的範圍內，在約5.1 µm與約10 µm之間的範圍內，或在約10.1 µm與約20 µm之間的範圍內。依據一些實施例，值(X3-X4)大於約0.1 µm，且可在約0.1 µm與約0.9 µm之間的範圍內，在約1 µm與約3 µm之間的範圍內，或在約3.1 µm與約20 µm之間的範圍內。
基底10的表面可形成階梯，所述階梯接觸包封材料60。所述階梯由側壁部分36'C、側壁部分36'D和基底10的水平表面10'形成。側壁部分36'D（基底10的側壁）是垂直的，且垂直於基底10的底表面。側壁部分36'C可為垂直或傾斜的。如為傾斜，側壁部分36'C的傾斜角θ5大於傾角角θ3和θ4兩者。
圖17B繪示依據本揭露的一些實施例形成的封裝體94，所述封裝體類似於圖17A中繪示的封裝體94，但是以形成單一聚合物層24來代替形成兩個聚合物層24和28。單一聚合物層24從保護層22延伸至介電層68。金屬通孔26形成於聚合物層24中。依據一些實施例，每一側壁36'包括傾斜（其可為彎曲）部分。所述細節類似於針對圖17A所繪示和討論，且其可參照具有對應參考編號的對應特徵的討論。
本揭露的實施例具有一些有利特徵。元件晶粒32的側壁是傾斜的。傾斜側壁有利於包封材料60在壓縮模製期間的向下移動平穩，且因此減小經模製元件晶粒所承受的應力。此外，傾斜側壁使得包封材料60容易在元件晶粒32旁壓縮，而不是直接按壓至元件晶粒32上，因此可減少元件晶粒32在壓縮包封材料時變形。
依據本發明的一些實施例，一種封裝體的形成方法，包括以下步驟。形成覆蓋晶圓中的金屬通孔的第一聚合物層。對所述晶圓上執行開槽，以形成溝槽，其中所述溝槽從所述第一聚合物層的頂表面延伸至所述晶圓中。對所述晶圓執行晶粒切割，以將所述晶圓分割為多個元件晶粒。切口穿過所述溝槽。將所述多個元件晶粒中的一元件晶粒放置在載體上方，其中所述元件晶粒包括所述金屬通孔和部分所述第一聚合物層。在所述元件晶粒上方和周圍施配包封材料。按壓和固化所述包封材料。在所述包封材料固化之後，所述第一聚合物層的第一側壁以第一傾斜角傾斜。對所述包封材料執行平坦化，至所述第一聚合物層和所述金屬通孔暴露出來。形成在所述金屬通孔上方且電耦合至所述金屬通孔的重分佈線。
依據本發明的一些實施例，所述金屬通孔延伸至位於所述第一聚合物層下方的第二聚合物層中，且其中在所述包封材料固化之後，所述第二聚合物層的第二側壁傾斜且具有大於所述第一傾斜角的第二傾斜角。
依據本發明的一些實施例，所述第一傾斜角在約50度與約70度之間的範圍內。
依據本發明的一些實施例，所述第二傾斜角在約70度與約85度之間的範圍內。
依據本發明的一些實施例，在所述第一聚合物層的剖面圖中，所述第一側壁為彎曲的。
依據本發明的一些實施例，所述開槽導致所述第一聚合物層的所述第一側壁朝向所述溝槽傾斜。
依據本發明的一些實施例，執行所述開槽至所述晶圓的基底暴露出來。
依據本發明的一些實施例，一種封裝體的形成方法包括：在晶圓上執行開槽以形成從晶圓的頂表面延伸至晶圓的中間水平面的多個溝槽；以及在晶圓上執行晶粒切割以將晶圓分割為多個元件晶粒。晶粒切割的切口穿過所述多個溝槽的對應者，且所述切口比所述多個溝槽的對應者窄。將所述多個元件晶粒中的元件晶粒放置在載體上方。元件晶粒包封在包封材料中。在包封元件晶粒之後，元件晶粒的側壁傾斜。所述方法更包括在包封材料上執行平坦化直至元件晶粒中的金屬通孔暴露，以及形成在金屬通孔上方且電耦合至金屬通孔的重分佈線。
依據本發明的一些實施例，一種封裝體包括：元件晶粒、包封材料、金屬柱以及重分佈線。元件晶粒包括基底以及側壁，其具有既不平行於也不垂直於所述基底的底表面的傾斜部分。包封材料將所述元件晶粒包封在其中，其中所述側壁的所述傾斜部分接觸所述包封材料。金屬柱穿過所述包封材料。重分佈線在所述金屬柱和所述元件晶粒上方且電耦合至所述金屬柱和所述元件晶粒。
依據本發明的一些實施例，封裝體更包括：第一聚合物層，其具有接觸所述包封材料的第一傾斜側壁，其中所述第一傾斜側壁具有第一傾斜角；第二聚合物層，其在所述第一聚合物層上方，其中所述第二聚合物層具有第二傾斜側壁，所述第二傾斜側壁的第二傾斜角小於所述第一傾斜角，且所述第一傾斜側壁和所述第二傾斜側壁為所述元件晶粒的所述側壁的部分所述傾斜部分；以及金屬通孔，其包括在所述第一聚合物層中的底部部分，以及在所述第二聚合物層中的頂部部分。
依據本發明的一些實施例，所述第一傾斜角在約70度與約85度之間的範圍內，且所述第二傾斜角在約50度與約70度之間的範圍內。
依據本發明的一些實施例，在所述元件晶粒的剖面圖中，所述側壁的所述傾斜部分為彎曲的。
依據本發明的一些實施例，所述元件晶粒的所述側壁形成階梯，其中所述階梯包括：所述基底的第一側壁；所述基底的頂表面；以及所述基底的第二側壁。
依據本發明的一些實施例，所述基底的所述第一側壁為垂直的，且所述基底的所述第二側壁為傾斜的。
依據本發明的一些實施例，一種封裝體包括：元件晶粒、包封材料、金屬柱以及重分佈線。元件晶粒包括：半導體基底；內連結構，其在所述半導體基底上方；金屬柱，其在所述內連結構上方且電耦合至所述內連結構；以及聚合物層，其包圍所述金屬柱，其中所述聚合物層具有既不平行於也不垂直於所述半導體基底的主要底表面的傾斜側壁。包封材料將所述元件晶粒包封在其中。重分佈線形成在所述金屬柱上方且電耦合至所述金屬柱。
依據本發明的一些實施例，所述聚合物層的所述傾斜側壁接觸所述包封材料。
依據本發明的一些實施例，其更包括介電層，其在所述聚合物層和所述包封材料兩者上方且接觸所述聚合物層和所述包封材料兩者，其中所述聚合物層的所述傾斜側壁延伸以連接所述介電層的底表面。
依據本發明的一些實施例，所述傾斜側壁為彎曲的。
依據本發明的一些實施例，所述聚合物層的上部部分變窄的幅度比所述聚合物層的對應下部變窄的幅度大。
依據本發明的一些實施例，所述傾斜側壁具有在約70度與約85度之間的範圍內的傾斜角。
依據本發明的一些實施例，所述元件晶粒的側壁形成階梯，其中所述階梯包括：所述半導體基底的第一側壁；所述半導體基底的頂表面；以及所述半導體基底的第二側壁。
以上概述了數個實施例的特徵，使本領域技術人員可更加瞭解本發明的態樣。本領域技術人員應理解，其可輕易地使用本發明作為設計或修改其他工藝與結構的依據，以實行本文所介紹的實施例的相同目的及/或達到相同優點。本領域技術人員還應理解，這種等效的配置並不悖離本發明的精神與範疇，且本領域技術人員在不悖離本發明的精神與範疇的情況下可對本文做出各種改變、置換以及變更。
2‧‧‧晶圓
10‧‧‧基底
10'‧‧‧水平表面
12‧‧‧半導體元件
14‧‧‧內連結構
16‧‧‧層間電介質
18‧‧‧金屬間電介質
20‧‧‧金屬接墊
22‧‧‧保護層
24‧‧‧聚合物層
26‧‧‧金屬通孔
28‧‧‧聚合物層
30‧‧‧切割道
32‧‧‧元件晶粒
34‧‧‧溝槽
35‧‧‧刀具
36、36'‧‧‧傾斜側壁
36'A、36'B‧‧‧傾斜部分/側壁部分/側壁
36'C‧‧‧傾斜部分
36'D‧‧‧側壁部分
40‧‧‧載體
42‧‧‧黏著層
44‧‧‧介電層
50‧‧‧導電晶種層
52‧‧‧光阻
54‧‧‧開口
56‧‧‧導電柱
60‧‧‧包封材料
62‧‧‧模具
64‧‧‧離型膜
66‧‧‧推力
68‧‧‧介電層
70‧‧‧重分佈線（RDL）
72‧‧‧凸塊下金屬（UBM）
74‧‧‧複合晶圓
76‧‧‧電連接件
78‧‧‧表面安裝元件
80‧‧‧焊料區
82‧‧‧開口
86、94‧‧‧封裝體
88、92‧‧‧封裝體元件
W1‧‧‧溝槽的寬度
W2‧‧‧切口的寬度
X1、X2、X3、X4‧‧‧距離
Y1、Y2‧‧‧厚度
θ1、θ2、θ3、θ4、θ5‧‧‧傾斜角
202、204、206、208、210、212、214、216、218、220、222、224‧‧‧步驟
圖1至17B繪示依據一些實施例的形成扇出封裝體的中間階段的剖面圖。 圖18繪示依據一些實施例的形成封裝體的製程流程。
200‧‧‧製程流程
202、204、206、208、210、212、214、216、218、220、222、224‧‧‧步驟

Claims (10)

  1. 一種封裝體的形成方法，包括： 形成覆蓋晶圓中的金屬通孔的第一聚合物層； 對所述晶圓上執行開槽，以形成溝槽，其中所述溝槽從所述第一聚合物層的頂表面延伸至所述晶圓中； 對所述晶圓執行晶粒切割，以將所述晶圓分割為多個元件晶粒，其中切口穿過所述溝槽； 將所述多個元件晶粒中的一元件晶粒放置在載體上方，其中所述元件晶粒包括所述金屬通孔和部分所述第一聚合物層； 在所述元件晶粒上方和周圍施配包封材料； 按壓和固化所述包封材料，其中在所述包封材料固化之後，所述第一聚合物層的第一側壁以第一傾斜角傾斜； 對所述包封材料執行平坦化，至所述第一聚合物層和所述金屬通孔暴露出來；以及 形成在所述金屬通孔上方且電耦合至所述金屬通孔的重分佈線。
  2. 如申請專利範圍第1項所述之封裝體的形成方法，其中所述金屬通孔延伸至位於所述第一聚合物層下方的第二聚合物層中，且其中在所述包封材料固化之後，所述第二聚合物層的第二側壁傾斜且具有大於所述第一傾斜角的第二傾斜角。
  3. 如申請專利範圍第2項所述之封裝體的形成方法，其中所述第一傾斜角在約50度與約70度之間的範圍內；所述第二傾斜角在約70度與約85度之間的範圍內。
  4. 如申請專利範圍第1項所述之封裝體的形成方法，其中在所述第一聚合物層的剖面圖中，所述第一側壁為彎曲的。
  5. 如申請專利範圍第1項所述之封裝體的形成方法，其中所述開槽導致所述第一聚合物層的所述第一側壁朝向所述溝槽傾斜。
  6. 如申請專利範圍第1項所述之封裝體的形成方法，其中執行所述開槽至所述晶圓的基底暴露出來。
  7. 一種封裝體，包括： 元件晶粒，包括： 基底；以及 側壁，其具有既不平行於也不垂直於所述基底的底表面的傾斜部分； 包封材料，將所述元件晶粒包封在其中，其中所述側壁的所述傾斜部分接觸所述包封材料； 金屬柱，穿過所述包封材料；以及 重分佈線，在所述金屬柱和所述元件晶粒上方且電耦合至所述金屬柱和所述元件晶粒。
  8. 如申請專利範圍第7項所述之封裝體，更包括： 第一聚合物層，其具有接觸所述包封材料的第一傾斜側壁，其中所述第一傾斜側壁具有第一傾斜角； 第二聚合物層，其在所述第一聚合物層上方，其中所述第二聚合物層具有第二傾斜側壁，所述第二傾斜側壁的第二傾斜角小於所述第一傾斜角，且所述第一傾斜側壁和所述第二傾斜側壁為所述元件晶粒的所述側壁的部分所述傾斜部分；以及 金屬通孔，其包括在所述第一聚合物層中的底部部分，以及在所述第二聚合物層中的頂部部分。
  9. 如申請專利範圍第7項所述之封裝體，其中所述元件晶粒的所述側壁形成階梯，其中所述階梯包括： 所述基底的第一側壁； 所述基底的頂表面；以及 所述基底的第二側壁。
  10. 一種封裝體，包括： 元件晶粒，包括： 半導體基底； 內連結構，其在所述半導體基底上方； 金屬柱，其在所述內連結構上方且電耦合至所述內連結構；以及 聚合物層，其包圍所述金屬柱，其中所述聚合物層具有既不平行於也不垂直於所述半導體基底的主要底表面的傾斜側壁； 包封材料，將所述元件晶粒包封在其中；以及 重分佈線，形成在所述金屬柱上方且電耦合至所述金屬柱。
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