TW201721732A - 用於濕蝕刻製程之溫度的動態控制之方法及設備 - Google Patents
用於濕蝕刻製程之溫度的動態控制之方法及設備 Download PDFInfo
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- 230000008569 process Effects 0.000 title abstract description 19
- 239000000126 substance Substances 0.000 claims abstract description 85
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 66
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 10
- 239000002253 acid Substances 0.000 description 8
- 238000005192 partition Methods 0.000 description 6
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910019142 PO4 Inorganic materials 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000010452 phosphate Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 3
- 238000000638 solvent extraction Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Abstract
本文提供透過所選溫度下硫酸之徑向分配的動態控制,來控制晶圓表面上磷酸製程的溫度分布的方法,該方法包含提供基板,其具有在其上所形成的層;使第一化學物及第二化學物分配於該層上,同時調整第二化學物分配的至少一參數,以改變遍及基板之區域的蝕刻速率。
Description
[相關申請案的交互參照]本申請案主張於2015年9月30日所提申之美國臨時申請案第62/235,330號的優先權,其整體內容併入本申請案中以供參照。
本發明係關於在磷酸及硫酸之混合物中之半導體表面的濕蝕刻處理,其係藉由透過硫酸之徑向分配的動態控制,來控制半導體晶圓表面上該酸的溫度分布。
半導體表面的濕式處理旨在膜移除、基板蝕刻、基板濕式摻雜、表面拋光、污染移除、表面調節、及其組合。磷酸蝕刻係為完善建立的製程(例如:處理濕式工作台上的晶圓)。已知的製程利用穩定的操作條件,例如酸的沸點。此等製程提供良好的氮化物對氧化物之選擇性(攝氏溫度165下為35:1),其可藉由額外使用硫酸及/或水(除了磷酸以外)而被改善。硫酸的使用可改善蝕刻氮化物相對於氧化物的選擇性,而水的使用會增加矽氮化物的蝕刻率。然而,往往需要漫長的過度蝕刻時間來確保完全的膜移除,因而造成降低的產能,且由於過度蝕刻,因此對於其他材料的高選擇性是必須的。半導體表面之濕蝕刻的改善係受到高度追求。
本發明提供對於以上討論之不利條件及/或缺失其中一或更多者的解決方法。
更具體而言,本發明提供透過所選溫度下硫酸之徑向分配的動態控制,來控制晶圓表面上磷酸製程的溫度分布的新穎方法,以及用以實施所提出之方法的設備。
本發明試圖解決在半導體表面之磷酸的濃度及溫度之局部化及獨立控制的問題。期望能提供遍及半導體表面之酸溫度分布的有效控制。由於各晶圓之溫度分布可能會改變,使得酸溫度與膜蝕刻速率以及殘留物移除效率兩者直接相關,所以上述情況為重要的。
本發明提供控制半導體表面上之酸溫度分布的能力。因此,可使該分布變得平坦、邊緣高起、邊緣低垂等,以使蝕刻速率可被局部地調整,以滿足製程需求。
選擇蝕刻速率分布以滿足製程需求,例如為了抵銷例如在邊緣處較厚的沉積製程。在此實例中,將溫度分布調整成邊緣高起,造成在邊緣處有較多的移除作用,達成待剝除之膜的完全移除,而不需要漫長的過度蝕刻製程時間。
因此,例如,膜厚度分布的決定係為了移除較厚區域同時不損害較薄區域下方的膜而決定。
在一廣泛態樣中,本發明係為用於蝕刻基板上之層的方法,包含:提供基板,其具有在其上所形成的層;使第一化學物分配於該層上;當分配第一化學物時,分別地使第二化學物分配於該層上;在該第二化學物之分配期間,在遍及該基板之區域調整該第二化學物之分配的至少一參數。
與使用磷酸及硫酸的已知製程相比,本發明在半導體表面上分配各酸的獨立流,且硫酸之分配位置係控制以在該表面上所期望之位置達到所期望之溫度分布。
本發明的動態控制係藉由共同分配硫酸來執行,以有效地控制製程溫度分布,且因此,蝕刻速率分布係藉由因局部硫酸分配而引起的局部溫度之變化來控制。選擇硫酸半徑範圍、溫度、流量、及濃度以達到所期望之溫度分布,其中選擇分配位置以達到橫跨晶圓的溫度分布。溫度分布係針對各晶圓而動態地制定,以使各蝕刻速率分布亦被制定。此會造成過度時刻時間的減少,且因此造成改善的產能。用語「過度蝕刻」在半導體處理的領域中具有其通常的意義。
概括而言,溫度分布係針對各晶圓而制定,其造成針對各晶圓所制定之蝕刻速率分布。此使過度蝕刻時間能降低,藉此改善產能。相較於傳統處理,其選擇性的需求是寬鬆的。選擇硫酸分配比例、溫度、流量、及濃度來達到各晶圓之所期望的溫度分布,且選擇分配位置以達到遍及晶圓之溫度分布的所期望之蝕刻分布。在本發明中,硫酸係與磷酸共同分配於所選之晶圓的半徑範圍,以有效地控制製程溫度分布。
因此,蝕刻速率分布係藉由因局部硫酸分配而引起的局部溫度之變化來控制。取決於基於晶圓輪廓之所期望之結果,本發明容許操作者產生固定溫度或可變溫度。
概括而言,本發明係為蝕刻基板上之層的方法。該方法包含提供基板,其具有在其上所形成的層。在本發明中,基板為半導體製造中所使用之矽晶圓,該等用語係如在習知情況下所使用者。接著,使第一化學物分配於該層上,而當分配第一化學物時,分別地使第二化學物分配於該層上。
在此製程期間,在第二化學物分配期間,在遍及基板之一區域調整第二化學物分配的至少一參數。該參數包含(但不限於) :硫酸分配半徑範圍,為達到溫度分布而決定;硫酸分配濃度,其通常為96%(重量百分濃度);硫酸分配溫度,其係為達到所期望之溫度分布而決定;硫酸分配流量,其係為達到給定之溫度分布而決定;磷酸分配濃度,其通常為85%(重量百分濃度);磷酸分配溫度,其係為達到給定之矽氮化物蝕刻速率而決定;磷酸分配流量,其係為達到給定之矽氮化物對於矽氧化物的選擇性而決定;水分配溫度,其通常為25°C;水分配流量,其係為達到給定之矽氮化物對於矽氧化物的選擇性而決定。此外,一般認為在小於或等於140°C的磷酸溫度下,最小矽氮化物蝕刻速率為1 nm/分鐘。
分配於表面上的第一化學物可為促進表面之蝕刻的的任何化學物,其中如此的第一化學物通常為液態形式及/或為無機酸。在一實施例中,第一化學物包含磷酸(H3
PO4
)。第一化學物通常在25°C至300°C的溫度下分配,更常在100°C至250°C下分配,且甚至更常在125°C至250°C下分配。在一實施例中,第一化學物係在140°C下分配。第二化學物可為協助第一化學物控制製程溫度分布的任何化學物。如此的第二化學物通常為液態形式及/或為無機酸。在一實施例中,第二化學物包含硫酸(H2
SO4
)。第二化學物通常在25°C至300°C的溫度下分配,更常在100°C至250°C下分配,且甚至更常在125°C至250°C下分配。在一實施例中,第一化學物通常在140°C至220°C的溫度下分配。
在一實施例中,基板存在分配操作的區域為整個基板。然而,亦可取決於所期望之結果而將分配操作局部化。關於分配,第二化學物之分配可與第一化學物之分配步驟同時開始。在另一實施例中,在第一化學物之分配步驟開始後,第二化學物之分配步驟才開始。
在特定實施例中,第一化學物係從第一噴嘴分配,而第二化學物 係從第二噴嘴分配。應注意,第一及第二化學物可從相同的噴嘴共同分配,例如藉由獨立控制在線上某點的第二化學物之流量,例如,第一及第二化學物初次互相接觸的點,因此隨著製程隨時間行進及隨著噴嘴可遍及基板表面上各區域而移動,容許第二化學物可以不同的濃度與第一化學物共同分配。就此而言,可將第一噴嘴裝設於第一分配臂上,而可將第二噴嘴裝設於第二分配臂上。應察知,第一及第二分配臂係為可繞樞軸轉動的,以達到基板上所有的徑向位置。
在一實施例中,第二分配的至少一參數包含基板上第二化學物的分配位置、第二化學物的溫度、第二化學物的流率、及第二化學物的濃度。在另一實施例中,執行調整第二化學物分配的至少一參數以改變遍及基板之區域的層之蝕刻速率,以抵銷該層之厚度不均勻性。在另一實施例中,執行調整第二化學物分配的至少一參數以使遍及基板之區域的過度蝕刻最小化。或者,調整第二化學物分配的至少一參數可為了使遍及基板之區域於實質上相同的時間達到層蝕刻端點而執行。在又一選擇中,執行調整第二化學物分配的至少一參數以在遍及基板之區域達到預定之蝕刻速率分布。在另一實施例中,執行調整第二化學物分配的至少一參數以在遍及基板之區域達到預定之溫度分布。在另一實施例中,執行調整第二化學物分配的至少一參數以在遍及基板之區域達到預定之選擇性分布而。並且,調整第二化學物分配的至少一參數可為了在接近層蝕刻端點時降低蝕刻速率而執行。
在一實施例中,本發明之方法包含調整第一化學物分配的至少一參數。就此而言,第一分配的至少一參數包含基板上第一化學物的分配位置、第一化學物的溫度、第一化學物的流率、及第一化學物的濃度。
在另一實施例中,本發明之方法包含使水分配於層上。就此而言,水可從第三噴嘴分配。例如,可將第三噴嘴裝設於第三分配臂上。在此實施例中,在水分配的期間調整水的流率、或水的溫度、或兩者。同樣地,水的流率、或水的溫度、或兩者的調整可為了選擇所期望之蝕刻選擇性而執行。
在另一實施例中,方法包含在蝕刻期間量測基板之溫度。就此而言,該方法以前饋或反饋的方式使用所量測的基板溫度以調整第二化學物分配的至少一參數。
針對溫度分布之動態控制而納入考量的製程變數包含(但不限於):硫酸分配半徑範圍,為達到溫度分布而決定;硫酸分配濃度,其通常為96%(重量百分濃度);硫酸分配溫度,其係為達到所期望之溫度分布而決定;硫酸分配流量,其係為達到給定之溫度分布而決定;磷酸分配濃度,其通常為85%(重量百分濃度);磷酸分配溫度,其係為達到給定之矽氮化物蝕刻速率而決定;磷酸分配流量,其係為達到給定之矽氮化物對於矽氧化物的選擇性而決定;水分配溫度,其通常為10°C至90°C,更常為20°C至50°C,而在一實施例中為25°C;水分配流量,其係為達到給定之矽氮化物對於矽氧化物的選擇性而決定。
此外,一般認為在小於或等於140°C的磷酸溫度下,最小矽氮化物蝕刻速率為1 nm/分鐘。在一實施例中,磷酸參考流量為每分鐘1標準升(sLm, standard liter per minute)。
在此等變數中,硫酸係為溫度控制及均勻性的關鍵。可達到平坦的溫度分布,例如在所分配硫酸之220°C的溫度下,以達到平坦的蝕刻,其中超過220°C的溫度會增加蝕刻速率,而低於220°C的溫度(例如140°C)會提供減少的蝕刻速率。應察知,在為了矽氮化物蝕刻之目的的混合物中,硫酸為惰性化學成分。在與磷酸混合之混合物中的水濃度係獨立於酸的溫度。在本發明的實施中,將水加入磷酸/硫酸混合物會達成高溫下且具有高相對含水量的處理,其本身會改善矽氮化物相對於矽氧化物的蝕刻選擇性。選擇水分配流量及溫度以達到所期望之蝕刻速率及選擇性。
以下表例示操作點,以說明本發明之製程的多元性。在各實例中,磷酸分配濃度為85 wt%,磷酸分配溫度為140°C,磷酸分配流量為1 sLm,而硫酸分配濃度為96 wt%。
本發明之例示性製程流程方案如下:決定待移除之膜的厚度分布;決定蝕刻速率分布,以抵銷膜厚度分布;決定溫度分布,以達到所期望之蝕刻速率分布;在給定之溫度、濃度、及流量下提供磷酸;使磷酸分配至晶圓表面;在給定之溫度、濃度、及流量下提供硫酸;以及使硫酸共同分配於晶圓表面上的位置,以達到所期望之溫度分布。
具有兩或更多噴嘴可容許硫酸分配於晶圓上不同的半徑範圍。此容許操作者局部地控制磷酸相對於硫酸之比例,以產生所期望之溫度分布。或者,可包含用於水分配的噴嘴。同樣地,或者,可包含用於第二硫酸分配的噴嘴。
對於熟習本領域技術者而言,在參考此敘述後,本發明之進一步的修改及替代的實施例將變得顯而易見。因此,可確認本發明不受此等例示性配置所限制。因此,此敘述係被解釋為僅為說明性的,且係為了教示熟習本領域技術者執行本發明之方法的目的。應瞭解,本說明書中所示的本發明之形式係被視為目前較佳的實施例。在該實施及結構中可進行各種改變。例如,可以等效的元件來替代本說明書中所說明及所敘述的元件,且本發明的特定特徵係可獨立於其他特徵之使用而利用,在受益於本發明之此敘述後,對於熟習本領域技術者而言,整體將變得顯而易見。
Claims (26)
- 一種用於蝕刻基板上之層的方法,其包含下列步驟: 提供基板,其具有在其上所形成的層; 使第一化學物分配於該層上; 當分配該第一化學物時,分別地使第二化學物分配於該層上; 在該第二化學物之分配期間,調整該第二化學物之分配的至少一參數,以改變遍及該基板之一區域的蝕刻速率。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中該第一化學物包含磷酸(H3 PO4 )。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中該第二化學物包含硫酸(H2 SO4 )。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中該基板之該區域包含整個該基板。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中分配該第二化學物的該步驟與分配該第一化學物的該步驟同時開始。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中在分配該第一化學物的該步驟開始後,分配該第二化學物的該步驟才開始。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中該第一化學物係從第一噴嘴分配,而該第二化學物係從第二噴嘴分配。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中該第一噴嘴係裝設於第一分配臂上,而該第二噴嘴係裝設於第二分配臂上。
- 如申請專利範圍第8項之用於蝕刻基板上之層的方法,其中該第一及該第二分配臂係為可繞樞軸點轉動的,以達到該基板上所有的徑向位置。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中該第二分配的該至少一參數包含該第二化學物在該基板上的分配位置、該第二化學物的溫度、該第二化學物的流率、及該第二化學物的濃度。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中執行調整該第二化學物之分配的該至少一參數之該步驟以改變遍及該基板之該區域的該層之蝕刻速率,俾抵銷該層之厚度不均勻性。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中執行該第二化學物之分配的該至少一參數之該調整步驟以使遍及該基板之該區域的過度蝕刻最小化。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中執行調整該第二化學物之分配的該至少一參數之該步驟以使遍及該基板之該區域於實質上相同的時間達到層蝕刻端點。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中執行調整該第二化學物之分配的該至少一參數之該步驟以在遍及該基板之該區域達到預定之蝕刻速率分布。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中執行調整該第二化學物之分配的該至少一參數之該步驟以在遍及該基板之該區域達到預定之溫度分布。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中執行調整該第二化學物之分配的該至少一參數之該步驟以在遍及該基板之該區域達到預定之選擇性分布。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,其中執行調整該第二化學物之分配的該至少一參數之該步驟以在接近層蝕刻端點時降低該蝕刻速率。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,更包含:調整該第一化學物之分配的至少一參數。
- 如申請專利範圍第18項之用於蝕刻基板上之層的方法,其中該第一分配的該至少一參數包含該第一化學物在該基板上的分配位置、該第一化學物的溫度、該第一化學物的流率、及該第一化學物的濃度。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,更包含:使水分配於該層上。
- 如申請專利範圍第20項之用於蝕刻基板上之層的方法,其中該水係從第三噴嘴分配。
- 如申請專利範圍第21項之用於蝕刻基板上之層的方法,其中該第三噴嘴係裝設於第三分配臂上。
- 如申請專利範圍第20項之用於蝕刻基板上之層的方法,其中在該水之分配期間調整該水的流率或該水的溫度、或兩者。
- 如申請專利範圍第23項之用於蝕刻基板上之層的方法,其中執行該水的流率或該水的溫度、或兩者的該調整步驟以選擇所期望之蝕刻選擇性。
- 如申請專利範圍第1項之用於蝕刻基板上之層的方法,更包含:在蝕刻期間量測該基板之溫度。
- 如申請專利範圍第25項之用於蝕刻基板上之層的方法,更包含:以前饋或反饋的方式使用所量測的基板溫度以調整該第二化學物之分配的該至少一參數。
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-
2016
- 2016-09-29 TW TW105131249A patent/TWI629720B/zh active
- 2016-09-30 US US15/282,104 patent/US10096480B2/en active Active
- 2016-09-30 CN CN201680057026.7A patent/CN108140571B/zh active Active
- 2016-09-30 JP JP2018516121A patent/JP2018530159A/ja active Pending
- 2016-09-30 WO PCT/US2016/054805 patent/WO2017059261A1/en active Application Filing
- 2016-09-30 KR KR1020187011582A patent/KR20180050417A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI680497B (zh) * | 2019-01-29 | 2019-12-21 | 大陸商長江存儲科技有限責任公司 | 智慧可制定濕式處理系統 |
Also Published As
Publication number | Publication date |
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JP2018530159A (ja) | 2018-10-11 |
TWI629720B (zh) | 2018-07-11 |
KR20180050417A (ko) | 2018-05-14 |
US10096480B2 (en) | 2018-10-09 |
US20170092550A1 (en) | 2017-03-30 |
WO2017059261A1 (en) | 2017-04-06 |
CN108140571A (zh) | 2018-06-08 |
CN108140571B (zh) | 2022-06-28 |
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